Pub Date : 2024-10-25DOI: 10.1109/JPHOTOV.2024.3480589
{"title":"Call for Papers: Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices","authors":"","doi":"10.1109/JPHOTOV.2024.3480589","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3480589","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"970-971"},"PeriodicalIF":2.5,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736225","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-25DOI: 10.1109/JPHOTOV.2024.3480591
{"title":"Call for Papers: Bridging the Data Gap in Photovoltaics with Synthetic Data Generation","authors":"","doi":"10.1109/JPHOTOV.2024.3480591","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3480591","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"972-973"},"PeriodicalIF":2.5,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736161","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-25DOI: 10.1109/JPHOTOV.2024.3478697
{"title":"IEEE Journal of Photovoltaics Information for Authors","authors":"","doi":"10.1109/JPHOTOV.2024.3478697","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3478697","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10736236","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-21DOI: 10.1109/JPHOTOV.2024.3476961
Christian Breyer;Gabriel Lopez;Arman Aghahosseini;Dmitrii Bogdanov;Rasul Satymov;Ayobami Solomon Oyewo
With the growth of solar photovoltaics (PV) in recent years as the largest power source by capacity added, the energy-industry transition towards high sustainability is accelerating. However, the energy-industry systems of the Americas are largely lagging as fossil fuels still dominate the electricity generation mix and the system as a whole. Energy-industry transition pathways are developed for all countries of the Americas reaching 100% renewable energy (RE) by 2050 for all energy and industry sectors. To benchmark the transition to 100% RE, the results are compared to current energy policies across the Americas, representing business-as-usual (BAU) conditions. The results indicate the significant potential to expand RE, especially solar PV, to reach the 100% RE target and fully defossilize each region's economy. The levelized cost of electricity (LCOE) can be reduced from its current level of 71 €/MWh to 24 €/MWh in 2050, and the levelized cost of final energy (LCOFE) sees reductions from 49 to 40 €/MWh from 2020 to 2050. Conversely, under BAU conditions, the LCOE only sees moderate reductions to 43 €/MWh in 2050, and the LCOFE remains relatively stable at 39 €/MWh in 2050. Widespread electrification across energy-industry sectors requires significant expansion of solar PV, which accounts for 78% of all electricity supply, leading to 14.8 TW of installed capacity. Furthermore, e-hydrogen for e-fuels and e-chemicals leads to an electrolyser capacity of 4.3 TW el . The dominating role of solar PV thus indicates that the future Americas energy-industry system can be characterized as a Solar-to-X Economy.
{"title":"On the Role of Solar PV for the Energy-Industry Transition in the Americas","authors":"Christian Breyer;Gabriel Lopez;Arman Aghahosseini;Dmitrii Bogdanov;Rasul Satymov;Ayobami Solomon Oyewo","doi":"10.1109/JPHOTOV.2024.3476961","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3476961","url":null,"abstract":"With the growth of solar photovoltaics (PV) in recent years as the largest power source by capacity added, the energy-industry transition towards high sustainability is accelerating. However, the energy-industry systems of the Americas are largely lagging as fossil fuels still dominate the electricity generation mix and the system as a whole. Energy-industry transition pathways are developed for all countries of the Americas reaching 100% renewable energy (RE) by 2050 for all energy and industry sectors. To benchmark the transition to 100% RE, the results are compared to current energy policies across the Americas, representing business-as-usual (BAU) conditions. The results indicate the significant potential to expand RE, especially solar PV, to reach the 100% RE target and fully defossilize each region's economy. The levelized cost of electricity (LCOE) can be reduced from its current level of 71 €/MWh to 24 €/MWh in 2050, and the levelized cost of final energy (LCOFE) sees reductions from 49 to 40 €/MWh from 2020 to 2050. Conversely, under BAU conditions, the LCOE only sees moderate reductions to 43 €/MWh in 2050, and the LCOFE remains relatively stable at 39 €/MWh in 2050. Widespread electrification across energy-industry sectors requires significant expansion of solar PV, which accounts for 78% of all electricity supply, leading to 14.8 TW of installed capacity. Furthermore, e-hydrogen for e-fuels and e-chemicals leads to an electrolyser capacity of 4.3 TW\u0000<sub>el</sub>\u0000. The dominating role of solar PV thus indicates that the future Americas energy-industry system can be characterized as a Solar-to-X Economy.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"17-23"},"PeriodicalIF":2.5,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10726607","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1109/JPHOTOV.2024.3463961
K. P. Sreejith;Vijay Venkatesh;Govind Padmakumar;Arno H. M. Smets
Photovoltaic (PV) panel installations in buildings and transportation hubs pose additional safety challenges as the glare from the panels can impose adverse impacts like flash blindness in human eyes. This study substantiates that polymer encapsulated thin film modules offer significantly low glare levels that are essential for building integrated and transport hub installations. In this work, the glare hazard potential associated with matt ethylene tetrafluoroethylene (ETFE)-based polymer sheet used as the frontsheet for the production of flexible thin amorphous silicon (a-Si) PV modules is studied and compared with standard PV glass used in crystalline silicon (c-Si) PV panels. The specular reflectance extracted from the measured total and diffuse reflectance for an angle of incidence (AOI) of 8 $^{circ }$ and the angular intensity distribution (AID) of specular reflectance measured for AOI ranging from 10 $^{circ }$ to 80 $^{circ }$ are utilized for glare assessment of the frontsheets. The mean value of specular reflectance extracted from the measured total and diffused reflectance is as low as $< $ 0.5% for the polymer frontsheet and is $>$ 4% for glass. The AID measurements suggest that the reflection from the polymer frontsheet is highly diffusive in nature in contrast to glass and the measured specular reflectance is always close to a magnitude lower than that from glass for all AOI. With the increase in AOI, the specular AID reflectance increases exponentially for glass to become as high as 40%, which is almost 20 times less than that from the polymer frontsheet for an AOI of 80 $^{circ }$ . Further, the c-Si test structure with glass and thin a-Si PV module with matt ETFE-based polymer as frontsheet showed similar specular reflectance trends as that of glass and the polymer frontsheet, respectively.
{"title":"Comprehensive Glare Hazard Analysis of Ethylene Tetrafluoroethylene (ETFE) Based Frontsheet for Flexible Photovoltaic Applications","authors":"K. P. Sreejith;Vijay Venkatesh;Govind Padmakumar;Arno H. M. Smets","doi":"10.1109/JPHOTOV.2024.3463961","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3463961","url":null,"abstract":"Photovoltaic (PV) panel installations in buildings and transportation hubs pose additional safety challenges as the glare from the panels can impose adverse impacts like flash blindness in human eyes. This study substantiates that polymer encapsulated thin film modules offer significantly low glare levels that are essential for building integrated and transport hub installations. In this work, the glare hazard potential associated with matt ethylene tetrafluoroethylene (ETFE)-based polymer sheet used as the frontsheet for the production of flexible thin amorphous silicon (a-Si) PV modules is studied and compared with standard PV glass used in crystalline silicon (c-Si) PV panels. The specular reflectance extracted from the measured total and diffuse reflectance for an angle of incidence (AOI) of 8\u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000 and the angular intensity distribution (AID) of specular reflectance measured for AOI ranging from 10\u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000 to 80\u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000 are utilized for glare assessment of the frontsheets. The mean value of specular reflectance extracted from the measured total and diffused reflectance is as low as \u0000<inline-formula><tex-math>$< $</tex-math></inline-formula>\u00000.5% for the polymer frontsheet and is \u0000<inline-formula><tex-math>$>$</tex-math></inline-formula>\u00004% for glass. The AID measurements suggest that the reflection from the polymer frontsheet is highly diffusive in nature in contrast to glass and the measured specular reflectance is always close to a magnitude lower than that from glass for all AOI. With the increase in AOI, the specular AID reflectance increases exponentially for glass to become as high as 40%, which is almost 20 times less than that from the polymer frontsheet for an AOI of 80\u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000. Further, the c-Si test structure with glass and thin a-Si PV module with matt ETFE-based polymer as frontsheet showed similar specular reflectance trends as that of glass and the polymer frontsheet, respectively.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"930-936"},"PeriodicalIF":2.5,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-14DOI: 10.1109/JPHOTOV.2024.3423764
Yongji Chen;Zhiqiang Mou;Jun Wang;Lihong Zhu;Yudan Gou;ZhengMing Sun
808 nm ten-junction laser power converters (LPCs) with different areas were designed and grown by metal-organic chemical vapor deposition. The I–V characteristics of the chips under three different testing conditions were compared to reveal the effect of heat accumulation on the performance of the LPCs. At the same time, the chip size effect was studied. In addition, the temperature of the LPCs was estimated based on its linear relationship with open-circuit voltage ( V oc ). Finally, the experiment of simultaneous wireless information and power transfer (SWIPT) was conducted to study the limitations on the performance of SWIPT based on the laser. A power transmission of 1.59 W and a data transmission rate of 200 kbit/s was achieved simultaneously.
{"title":"808 nm Laser Power Converters for Simultaneous Wireless Information and Power Transfer","authors":"Yongji Chen;Zhiqiang Mou;Jun Wang;Lihong Zhu;Yudan Gou;ZhengMing Sun","doi":"10.1109/JPHOTOV.2024.3423764","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3423764","url":null,"abstract":"808 nm ten-junction laser power converters (LPCs) with different areas were designed and grown by metal-organic chemical vapor deposition. The I–V characteristics of the chips under three different testing conditions were compared to reveal the effect of heat accumulation on the performance of the LPCs. At the same time, the chip size effect was studied. In addition, the temperature of the LPCs was estimated based on its linear relationship with open-circuit voltage (\u0000<italic>V</i>\u0000<sub>oc</sub>\u0000). Finally, the experiment of simultaneous wireless information and power transfer (SWIPT) was conducted to study the limitations on the performance of SWIPT based on the laser. A power transmission of 1.59 W and a data transmission rate of 200 kbit/s was achieved simultaneously.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"890-900"},"PeriodicalIF":2.5,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142517909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/JPHOTOV.2024.3466214
Takaya Sugiura;Yuta Watanabe
In this study, we demonstrates a self-powered self-generated nanoampere current source using a semi-open-circuit photovoltaic cell. This cell was designed by connecting a large resistance to a photovoltaic cell that enabled the output of a very small current. By changing load resistances, the output current can be linearly modified. We have conducted the numerical simulations to validate the concept and discussed effects of load resistance, cell area and light source to output current. Our experiment demonstrated that a sufficiently stable current output can be obtained using different light sources, and inversely linear relationship between the output current and the load resistance was obtained. We anticipate that sufficient photocurrent would be required to stabilize the output current.
{"title":"Photovoltaic-Generated Nanoampere Current Source Designed on Silicon LSIs","authors":"Takaya Sugiura;Yuta Watanabe","doi":"10.1109/JPHOTOV.2024.3466214","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3466214","url":null,"abstract":"In this study, we demonstrates a self-powered self-generated nanoampere current source using a semi-open-circuit photovoltaic cell. This cell was designed by connecting a large resistance to a photovoltaic cell that enabled the output of a very small current. By changing load resistances, the output current can be linearly modified. We have conducted the numerical simulations to validate the concept and discussed effects of load resistance, cell area and light source to output current. Our experiment demonstrated that a sufficiently stable current output can be obtained using different light sources, and inversely linear relationship between the output current and the load resistance was obtained. We anticipate that sufficient photocurrent would be required to stabilize the output current.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"901-906"},"PeriodicalIF":2.5,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-04DOI: 10.1109/JPHOTOV.2024.3463974
Tal Kasher;Lauren M. Kaliszewski;Daniel L. Lepkowski;Jacob T. Boyer;Marzieh Baan;Tyler J. Grassman;Steven A. Ringel
To date, the greatest performance limiter in monolithic III-V/Si tandem (multijunction) solar cells, like GaAs $_{0.75}$ P $_{0.25}$ /Si, is excess threading dislocation densities (TDD) resulting from the lattice-mismatched heteroepitaxy. Recent developments in low-TDD GaAs y P 1-y /Si metamorphic buffers were used to grow standalone GaAs $_{0.75}$ P $_{0.25}$ top cells on Si with a TDD of 4 × 10 6 cm −2 , ∼2.5 × lower than previous iterations, greatly improving the potential for the production of high-efficiency tandems based on this platform. Nonetheless, these reduced-TDD cells were still found to possess considerable voltage-dependent carrier collection (VDC) losses. As such, to improve J SC and fill factor, without sacrificial reduction in V OC , a doping gradient within the cell base layer was designed and implemented. The updated design reduces VDC losses to levels that would otherwise require further TDD reduction by at least another 2.5 × (to ≤ 1.5 × 10 6 cm −2 ) in a typical flat doping profile design. Replacing the p + -Ga $_{0.64}$ In $_{0.36}$ P back surface field with p + -Al $_{0.2}$ Ga $_{0.8}$ As $_{0.74}$ P $_{0.26}$ provided an additional improvement in both V OC and J SC , yielding device performance equivalent to a 4 × TDD reduction in the previous design. The culmination of these design changes results in a new subcell that outperforms our previous best top cell by ∼4.3% absolute AM1.5G efficiency, with increases in fill factor, J SC , and W OC of about 3.3% absolute, 1.9 mA/cm 2 , and 0.12 V, respectively. This new design, coupled with the reduced TDD platform, paves a promising path toward the development of higher efficiency GaAs $_{0.75}$ P $_{0.25}$ /Si tandems upon full device integration.
{"title":"Design for Increased Defect Tolerance in Metamorphic GaAsP-on-Si Top Cells","authors":"Tal Kasher;Lauren M. Kaliszewski;Daniel L. Lepkowski;Jacob T. Boyer;Marzieh Baan;Tyler J. Grassman;Steven A. Ringel","doi":"10.1109/JPHOTOV.2024.3463974","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3463974","url":null,"abstract":"To date, the greatest performance limiter in monolithic III-V/Si tandem (multijunction) solar cells, like GaAs\u0000<inline-formula><tex-math>$_{0.75}$</tex-math></inline-formula>\u0000P\u0000<inline-formula><tex-math>$_{0.25}$</tex-math></inline-formula>\u0000/Si, is excess threading dislocation densities (TDD) resulting from the lattice-mismatched heteroepitaxy. Recent developments in low-TDD GaAs\u0000<italic><sub>y</sub></i>\u0000P\u0000<sub>1-</sub>\u0000<italic><sub>y</sub></i>\u0000/Si metamorphic buffers were used to grow standalone GaAs\u0000<inline-formula><tex-math>$_{0.75}$</tex-math></inline-formula>\u0000P\u0000<inline-formula><tex-math>$_{0.25}$</tex-math></inline-formula>\u0000 top cells on Si with a TDD of 4 × 10\u0000<sup>6</sup>\u0000 cm\u0000<sup>−2</sup>\u0000, ∼2.5 × lower than previous iterations, greatly improving the potential for the production of high-efficiency tandems based on this platform. Nonetheless, these reduced-TDD cells were still found to possess considerable voltage-dependent carrier collection (VDC) losses. As such, to improve \u0000<italic>J</i>\u0000<sub>SC</sub>\u0000 and fill factor, without sacrificial reduction in \u0000<italic>V</i>\u0000<sub>OC</sub>\u0000, a doping gradient within the cell base layer was designed and implemented. The updated design reduces VDC losses to levels that would otherwise require further TDD reduction by at least another 2.5 × (to ≤ 1.5 × 10\u0000<sup>6</sup>\u0000 cm\u0000<sup>−2</sup>\u0000) in a typical flat doping profile design. Replacing the p\u0000<sup>+</sup>\u0000-Ga\u0000<inline-formula><tex-math>$_{0.64}$</tex-math></inline-formula>\u0000In\u0000<inline-formula><tex-math>$_{0.36}$</tex-math></inline-formula>\u0000P back surface field with p\u0000<sup>+</sup>\u0000-Al\u0000<inline-formula><tex-math>$_{0.2}$</tex-math></inline-formula>\u0000Ga\u0000<inline-formula><tex-math>$_{0.8}$</tex-math></inline-formula>\u0000As\u0000<inline-formula><tex-math>$_{0.74}$</tex-math></inline-formula>\u0000P\u0000<inline-formula><tex-math>$_{0.26}$</tex-math></inline-formula>\u0000 provided an additional improvement in both \u0000<italic>V</i>\u0000<sub>OC</sub>\u0000 and \u0000<italic>J</i>\u0000<sub>SC</sub>\u0000, yielding device performance equivalent to a 4 × TDD reduction in the previous design. The culmination of these design changes results in a new subcell that outperforms our previous best top cell by ∼4.3% absolute AM1.5G efficiency, with increases in fill factor, \u0000<italic>J</i>\u0000<sub>SC</sub>\u0000, and \u0000<italic>W</i>\u0000<sub>OC</sub>\u0000 of about 3.3% absolute, 1.9 mA/cm\u0000<sup>2</sup>\u0000, and 0.12 V, respectively. This new design, coupled with the reduced TDD platform, paves a promising path toward the development of higher efficiency GaAs\u0000<inline-formula><tex-math>$_{0.75}$</tex-math></inline-formula>\u0000P\u0000<inline-formula><tex-math>$_{0.25}$</tex-math></inline-formula>\u0000/Si tandems upon full device integration.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 6","pages":"911-919"},"PeriodicalIF":2.5,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142518012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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