Pub Date : 2023-09-14DOI: 10.1109/JPHOTOV.2023.3306827
Charaf Hajjaj;Massaab El Ydrissi;Alae Azouzoute;Ayoub Oufadel;Omaima El Alani;Mohamed Boujoudar;Mounir Abraim;Abdellatif Ghennioui
Accurate prediction of photovoltaic (PV) power output is crucial for assessing the feasibility of early-stage projects in relation to specific site weather conditions. While various mathematical models have been used in the past for PV power prediction, most of them only consider irradiance and ambient temperature, neglecting other important meteorological parameters. In this article, a 1-year dataset from a high-precision meteorological station at the Green Energy Research facility is utilized, along with electrical parameters from a polycrystalline silicon c-Si PV module exposed during the study period, to forecast PV power. In addition, the accuracy of using satellite data for PV power forecasting is investigated, considering the growing trend of its utilization in recent research. Regression techniques, such as linear regression with interaction, tree regression, Gaussian process regression, ensemble learning for regression, response surface methodology, SVM cubic, and artificial neural network (ANN), are employed for PV power prediction, using both ground measurement data and satellite data. Comparatively lower accuracies are observed when using satellite data across all regression methods, in contrast to the higher accuracies achieved with ground-based measurements. Notably, the Gaussian process regression method demonstrates high accuracy ( R 2 = 0.25 for satellite data and R 2 = 0.94 for ground-based data). Furthermore, the ANN approach further enhances the accuracy of PV power forecasting, yielding R 2 = 0.42 for satellite data and R 2 = 0.96 for ground-based data. These findings emphasize the need for caution when relying on satellite data for PV power forecasting, even when employing advanced ANN approaches. It underscores the importance of considering ground-based measurements for more reliable and accurate predictions.
{"title":"Comparing Photovoltaic Power Prediction: Ground-Based Measurements vs. Satellite Data Using an ANN Model","authors":"Charaf Hajjaj;Massaab El Ydrissi;Alae Azouzoute;Ayoub Oufadel;Omaima El Alani;Mohamed Boujoudar;Mounir Abraim;Abdellatif Ghennioui","doi":"10.1109/JPHOTOV.2023.3306827","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3306827","url":null,"abstract":"Accurate prediction of photovoltaic (PV) power output is crucial for assessing the feasibility of early-stage projects in relation to specific site weather conditions. While various mathematical models have been used in the past for PV power prediction, most of them only consider irradiance and ambient temperature, neglecting other important meteorological parameters. In this article, a 1-year dataset from a high-precision meteorological station at the Green Energy Research facility is utilized, along with electrical parameters from a polycrystalline silicon c-Si PV module exposed during the study period, to forecast PV power. In addition, the accuracy of using satellite data for PV power forecasting is investigated, considering the growing trend of its utilization in recent research. Regression techniques, such as linear regression with interaction, tree regression, Gaussian process regression, ensemble learning for regression, response surface methodology, SVM cubic, and artificial neural network (ANN), are employed for PV power prediction, using both ground measurement data and satellite data. Comparatively lower accuracies are observed when using satellite data across all regression methods, in contrast to the higher accuracies achieved with ground-based measurements. Notably, the Gaussian process regression method demonstrates high accuracy (\u0000<italic>R</i>\u0000<sup>2</sup>\u0000 = 0.25 for satellite data and \u0000<italic>R</i>\u0000<sup>2</sup>\u0000 = 0.94 for ground-based data). Furthermore, the ANN approach further enhances the accuracy of PV power forecasting, yielding \u0000<italic>R</i>\u0000<sup>2</sup>\u0000 = 0.42 for satellite data and \u0000<italic>R</i>\u0000<sup>2</sup>\u0000 = 0.96 for ground-based data. These findings emphasize the need for caution when relying on satellite data for PV power forecasting, even when employing advanced ANN approaches. It underscores the importance of considering ground-based measurements for more reliable and accurate predictions.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"998-1006"},"PeriodicalIF":3.0,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71902971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-14DOI: 10.1109/JPHOTOV.2023.3309932
Karsten Bothe;David Hinken;Rolf Brendel
This work is concerned with maximal and currently obtained fill factors of crystalline silicon solar cells. Recent research activities have led to a drastically decreased recombination in the volume as well as at the surfaces and interfaces of crystalline silicon solar cells. As a result, open-circuit voltages $({{V}_{text{OC}}})$ and fill factor $({textit{FF}})$ values increased significantly. In order to classify how good the achieved improvements are, it is necessary to know the maximum achievable values. Unfortunately, there is no explicit expression for the ${textit{FF}}$ in terms of other characteristic solar cell parameters. For this reason, the empirical ${textit{FF}}_{0}$ -relation by Green is widely used to predict upper ${textit{FF}}$ bounds for a given ${V}_{text{OC}}$ . In order to evaluate to what extent Green's relation is a good approximation to recently obtained values, we study ${textit{FF}}$ – ${V}_{text{OC}}$ relations for ideal resistance-free single junction silicon solar cells limited by intrinsic recombination using state-of-the-art analytical models. The obtained upper bounds are compared with recently published record values showing that all values stay below the intrinsic limit. We provide parameterizations of ${V}_{text{OC}}$ and ${textit{FF}}$ as a function of sample thickness w and base dopant density ${N}_{text{dop}}$ .
{"title":"Extended FF and VOC Parameterizations for Silicon Solar Cells","authors":"Karsten Bothe;David Hinken;Rolf Brendel","doi":"10.1109/JPHOTOV.2023.3309932","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3309932","url":null,"abstract":"This work is concerned with maximal and currently obtained fill factors of crystalline silicon solar cells. Recent research activities have led to a drastically decreased recombination in the volume as well as at the surfaces and interfaces of crystalline silicon solar cells. As a result, open-circuit voltages \u0000<inline-formula><tex-math>$({{V}_{text{OC}}})$</tex-math></inline-formula>\u0000 and fill factor \u0000<inline-formula><tex-math>$({textit{FF}})$</tex-math></inline-formula>\u0000 values increased significantly. In order to classify how good the achieved improvements are, it is necessary to know the maximum achievable values. Unfortunately, there is no explicit expression for the \u0000<inline-formula><tex-math>${textit{FF}}$</tex-math></inline-formula>\u0000 in terms of other characteristic solar cell parameters. For this reason, the empirical \u0000<inline-formula><tex-math>${textit{FF}}_{0}$</tex-math></inline-formula>\u0000-relation by Green is widely used to predict upper \u0000<inline-formula><tex-math>${textit{FF}}$</tex-math></inline-formula>\u0000 bounds for a given \u0000<inline-formula><tex-math>${V}_{text{OC}}$</tex-math></inline-formula>\u0000. In order to evaluate to what extent Green's relation is a good approximation to recently obtained values, we study \u0000<inline-formula><tex-math>${textit{FF}}$</tex-math></inline-formula>\u0000–\u0000<inline-formula><tex-math>${V}_{text{OC}}$</tex-math></inline-formula>\u0000 relations for ideal resistance-free single junction silicon solar cells limited by intrinsic recombination using state-of-the-art analytical models. The obtained upper bounds are compared with recently published record values showing that all values stay below the intrinsic limit. We provide parameterizations of \u0000<inline-formula><tex-math>${V}_{text{OC}}$</tex-math></inline-formula>\u0000 and \u0000<inline-formula><tex-math>${textit{FF}}$</tex-math></inline-formula>\u0000 as a function of sample thickness \u0000<italic>w</i>\u0000 and base dopant density \u0000<inline-formula><tex-math>${N}_{text{dop}}$</tex-math></inline-formula>\u0000.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"787-792"},"PeriodicalIF":3.0,"publicationDate":"2023-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-13DOI: 10.1109/JPHOTOV.2023.3309915
Ryan M. France;Myles A. Steiner
Quantum wells can extend the absorption range of a solar cell and are typically placed in the intrinsic region of the device to enable efficient carrier collection via drift. Thick intrinsic regions are needed for significant absorption in the low bandgap quantum wells, resulting in a large depletion region recombination and ultimately a solar cell with a low fill factor (FF). However, in quantum well superlattice solar cells where tunneling plays a dominant role in carrier transport, collection by carrier diffusion may be possible, relieving the requirement for quantum wells to be placed in the intrinsic region. Here, we investigate doping in stress-balanced quantum well superlattice solar cells using thin 2 nm GaP barriers. Doping reduces J02 depletion region recombination and improves the solar cell FF up to 86.7%, but very high doping eventually reduces the carrier collection, leading to a tradeoff in efficiency. We show that the barrier thickness also plays an important role in carrier collection, and we demonstrate high efficiency 27.5% single-junction devices with a doped superlattice.
{"title":"Doped GaInAs/GaP Quantum Well Superlattice Solar Cells With 27.5% Efficiency","authors":"Ryan M. France;Myles A. Steiner","doi":"10.1109/JPHOTOV.2023.3309915","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3309915","url":null,"abstract":"Quantum wells can extend the absorption range of a solar cell and are typically placed in the intrinsic region of the device to enable efficient carrier collection via drift. Thick intrinsic regions are needed for significant absorption in the low bandgap quantum wells, resulting in a large depletion region recombination and ultimately a solar cell with a low fill factor (FF). However, in quantum well superlattice solar cells where tunneling plays a dominant role in carrier transport, collection by carrier diffusion may be possible, relieving the requirement for quantum wells to be placed in the intrinsic region. Here, we investigate doping in stress-balanced quantum well superlattice solar cells using thin 2 nm GaP barriers. Doping reduces J02 depletion region recombination and improves the solar cell FF up to 86.7%, but very high doping eventually reduces the carrier collection, leading to a tradeoff in efficiency. We show that the barrier thickness also plays an important role in carrier collection, and we demonstrate high efficiency 27.5% single-junction devices with a doped superlattice.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"814-818"},"PeriodicalIF":3.0,"publicationDate":"2023-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-11DOI: 10.1109/JPHOTOV.2023.3311542
Timothy J. Silverman;Ingrid R. Repins
Thin-film photovoltaic (PV) modules are often made using monolithic integration (MLI), regardless of absorber technology. MLI modules sometimes use a fourth pattern of scribe lines, P4, to divide modules into parallel substrings of cells. We simulated diagonal shadows in such modules and show that they cause a voltage difference across P4. This voltage can be enough to cause an arc across P4. An arc inside a PV module can cause burned polymers and broken glass. Such packaging failures create a risk of fire or electric shock in any PV module. These hazards go beyond the permanent loss of efficiency that vertical shadows can cause. We propose several solutions to this potential problem.
{"title":"Diagonal Shadows Could Cause Arcs in Thin-Film Modules With P4 Scribes","authors":"Timothy J. Silverman;Ingrid R. Repins","doi":"10.1109/JPHOTOV.2023.3311542","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3311542","url":null,"abstract":"Thin-film photovoltaic (PV) modules are often made using monolithic integration (MLI), regardless of absorber technology. MLI modules sometimes use a fourth pattern of scribe lines, P4, to divide modules into parallel substrings of cells. We simulated diagonal shadows in such modules and show that they cause a voltage difference across P4. This voltage can be enough to cause an arc across P4. An arc inside a PV module can cause burned polymers and broken glass. Such packaging failures create a risk of fire or electric shock in any PV module. These hazards go beyond the permanent loss of efficiency that vertical shadows can cause. We propose several solutions to this potential problem.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"917-919"},"PeriodicalIF":3.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71902897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-11DOI: 10.1109/JPHOTOV.2023.3309916
Kenneth J. Schmieder;Thomas C. Mood;Eric A. Armour;Mitchell F. Bennett;Margaret A. Stevens;Martin Diaz;Ziggy Pulwin;Matthew P. Lumb
To further improve the performance of mechanically stacked microconcentrator photovoltaic devices, we have studied high-transparency tunnel junctions for inclusion in triple junction solar cells that are fully lattice-matched to InP. These tunnel junctions are evaluated using both standalone tunnel diodes as well as full multijunction solar cells. Of particular focus herein is the p-type tunnel junction layer, which has proven challenging to integrate in multijunction solar cells with high electrical activity, a wide enough bandgap for transparency, and an abrupt doping profile. Studies include the effect of polarity, tunnel diode dopant/composition, application of a nitrogen anneal, tunnel diode growth temperature, and cladding material. Resulting InP-based triple junction devices achieved up to 370 suns-equivalent tunneling capability, which satisfies the requirements for microconcentrator photovoltaic applications in the space environment.
{"title":"InP-Based Tunnel Junctions for Microconcentrator Photovoltaics","authors":"Kenneth J. Schmieder;Thomas C. Mood;Eric A. Armour;Mitchell F. Bennett;Margaret A. Stevens;Martin Diaz;Ziggy Pulwin;Matthew P. Lumb","doi":"10.1109/JPHOTOV.2023.3309916","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3309916","url":null,"abstract":"To further improve the performance of mechanically stacked microconcentrator photovoltaic devices, we have studied high-transparency tunnel junctions for inclusion in triple junction solar cells that are fully lattice-matched to InP. These tunnel junctions are evaluated using both standalone tunnel diodes as well as full multijunction solar cells. Of particular focus herein is the p-type tunnel junction layer, which has proven challenging to integrate in multijunction solar cells with high electrical activity, a wide enough bandgap for transparency, and an abrupt doping profile. Studies include the effect of polarity, tunnel diode dopant/composition, application of a nitrogen anneal, tunnel diode growth temperature, and cladding material. Resulting InP-based triple junction devices achieved up to 370 suns-equivalent tunneling capability, which satisfies the requirements for microconcentrator photovoltaic applications in the space environment.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"819-824"},"PeriodicalIF":3.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-11DOI: 10.1109/JPHOTOV.2023.3307815
Tahmineh Khademi;Tayebeh Movlarooy
2D perovskites have recently become a promising substitute for 3D structures. In 2D lead-free perovskites, unique optical and electronic properties for photoelectronic and photovoltaic applications have been observed due to the quantum confinement effect. In this study, density functional theory calculations were used to examine both the electrical and optical characteristics of lead-free, 2D compounds of (PEA) 2 MI 4 (PEA = C 6 H 5 C 2 H 4 NH 3+ , M = Ge, Sn, Sn 0.5 Ge 0.5 ). The results of our research have shown that (PEA) 2 GeI 4 , (PEA) 2 SnI 4 , and (PEA) 2 Sn 0.5 Ge 0.5 I 4 have a direct bandgap of about 1.0 eV, 1.2 eV, and 1.4 eV, respectively. By adding Sn to structure (PEA) 2 GeI 4 , it was possible to notice a redshift of the absorption edge and band gap shrinking in the visible light range, which demonstrates the special optical characteristics of structure (PEA) 2 Sn 0.5 Ge 0.5 I 4 for photovoltaic applications. It is revealed that (PEA) 2 Sn 0.5 Ge 0.5 I 4 compound has a suitable bandgap and high optical absorption and conductivity in the visible region. In addition, low reflectivity, high absorption, high conductivity, and high dielectric constant imply that these materials have a high potential for use in photovoltaic and optoelectronic devices, including optical detectors, LED, solar cells, etc.
{"title":"Exploring Optical and Electronic Properties of 2D Lead-Free Hybrid Perovskites Based on Sn-Ge for Photovoltaic Applications","authors":"Tahmineh Khademi;Tayebeh Movlarooy","doi":"10.1109/JPHOTOV.2023.3307815","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3307815","url":null,"abstract":"2D perovskites have recently become a promising substitute for 3D structures. In 2D lead-free perovskites, unique optical and electronic properties for photoelectronic and photovoltaic applications have been observed due to the quantum confinement effect. In this study, density functional theory calculations were used to examine both the electrical and optical characteristics of lead-free, 2D compounds of (PEA)\u0000<sub>2</sub>\u0000MI\u0000<sub>4</sub>\u0000 (PEA = C\u0000<sub>6</sub>\u0000H\u0000<sub>5</sub>\u0000C\u0000<sub>2</sub>\u0000H\u0000<sub>4</sub>\u0000NH\u0000<sub>3</sub>\u0000<sup>+</sup>\u0000, M = Ge, Sn, Sn\u0000<sub>0.5</sub>\u0000Ge\u0000<sub>0.5</sub>\u0000). The results of our research have shown that (PEA)\u0000<sub>2</sub>\u0000GeI\u0000<sub>4</sub>\u0000, (PEA)\u0000<sub>2</sub>\u0000SnI\u0000<sub>4</sub>\u0000, and (PEA)\u0000<sub>2</sub>\u0000Sn\u0000<sub>0.5</sub>\u0000Ge\u0000<sub>0.5</sub>\u0000I\u0000<sub>4</sub>\u0000 have a direct bandgap of about 1.0 eV, 1.2 eV, and 1.4 eV, respectively. By adding Sn to structure (PEA)\u0000<sub>2</sub>\u0000GeI\u0000<sub>4</sub>\u0000, it was possible to notice a redshift of the absorption edge and band gap shrinking in the visible light range, which demonstrates the special optical characteristics of structure (PEA)\u0000<sub>2</sub>\u0000Sn\u0000<sub>0.5</sub>\u0000Ge\u0000<sub>0.5</sub>\u0000I\u0000<sub>4</sub>\u0000 for photovoltaic applications. It is revealed that (PEA)\u0000<sub>2</sub>\u0000Sn\u0000<sub>0.5</sub>\u0000Ge\u0000<sub>0.5</sub>\u0000I\u0000<sub>4</sub>\u0000 compound has a suitable bandgap and high optical absorption and conductivity in the visible region. In addition, low reflectivity, high absorption, high conductivity, and high dielectric constant imply that these materials have a high potential for use in photovoltaic and optoelectronic devices, including optical detectors, LED, solar cells, etc.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"873-881"},"PeriodicalIF":3.0,"publicationDate":"2023-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71902907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-08DOI: 10.1109/JPHOTOV.2023.3309922
Nancy M. Haegel;Sarah R. Kurtz
2022 was a milestone year for photovoltaics (PV), with cumulative installed global capacity exceeding 1 TW. PV represented 56% of newly installed global electricity generating capacity for 2022, the second year in a row that this metric exceeded 50%. The combined contributions of nonhydro renewable electricity generation (solar, wind, tidal, geothermal, and biomass) was comparable to that of hydropower for the first time in history. However, the total combination of carbon-free generation sources (hydro, nuclear, and renewables) stayed constant at ∼38% of total electricity, with the annual growth in overall generation (∼2%) balancing the large fractional growth in solar (25%) and wind (14%). Following its initial publication in 2021 with 1990–2020 data, this annual article will continue to collect information from multiple sources and present it systematically as a convenient reference for IEEE JPV readers. This year, for the first time, we present data on the growth of storage capacity. We find that growth of stationary battery storage now exceeds growth of pumped hydropower storage. That same annual investment in new stationary batteries, however, is small compared to the growth of battery storage in electric vehicles.
{"title":"Global Progress Toward Renewable Electricity: Tracking the Role of Solar (Version 3)","authors":"Nancy M. Haegel;Sarah R. Kurtz","doi":"10.1109/JPHOTOV.2023.3309922","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3309922","url":null,"abstract":"2022 was a milestone year for photovoltaics (PV), with cumulative installed global capacity exceeding 1 TW. PV represented 56% of newly installed global electricity generating capacity for 2022, the second year in a row that this metric exceeded 50%. The combined contributions of nonhydro renewable electricity generation (solar, wind, tidal, geothermal, and biomass) was comparable to that of hydropower for the first time in history. However, the total combination of carbon-free generation sources (hydro, nuclear, and renewables) stayed constant at ∼38% of total electricity, with the annual growth in overall generation (∼2%) balancing the large fractional growth in solar (25%) and wind (14%). Following its initial publication in 2021 with 1990–2020 data, this annual article will continue to collect information from multiple sources and present it systematically as a convenient reference for IEEE JPV readers. This year, for the first time, we present data on the growth of storage capacity. We find that growth of stationary battery storage now exceeds growth of pumped hydropower storage. That same annual investment in new stationary batteries, however, is small compared to the growth of battery storage in electric vehicles.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"768-776"},"PeriodicalIF":3.0,"publicationDate":"2023-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-04DOI: 10.1109/JPHOTOV.2023.3307822
Stefan Lange;Angelika Hähnel;Christoph Luderer;David Adner;Martin Bivour;Christian Hagendorf
Over the last years, the dominating charge carrier transport barrier in silicon heterojunction (SHJ) solar cells could be boiled down to the contact of the indium–tin oxide (ITO) to the doped amorphous silicon (a-Si) layer. The formation of a parasitic oxide at this junction was hypothesized to act as a source for contact deterioration after annealing. However, no experimental proof could be obtained so far. In this contribution, we simultaneously investigate the contact resistivity and nanoscopic structure of the electron contact of a SHJ solar cell in the annealing temperature range between 140 $^circ text{C}$ and 240 $^circ text{C}$ . For this purpose, micro transfer length measurements, time-of-flight secondary ion mass spectrometry, and electron–energy loss spectroscopy as well as energy-dispersive X-ray spectroscopy in a (scanning) transmission electron microscope are applied. A minimum contact resistivity of around 120 $text{m}Omega {text{cm}^{2}}$ is obtained at 160 $^circ text{C}$ . At higher temperatures, the contact resistivities increase rapidly. This contact degradation correlates with the thickening of a parasitic silicon oxide layer found at the ITO/a-Si junction and an increase in Si oxidation state within this interlayer. Additionally, Ag from the metallization diffuses into the Si, which may induce deep acceptor trap states. Furthermore, a TiO ${}_{text{x}}$ layer with ${text{x}}sim {1}$ is proven between ITO and the AgPdTi metallization, which does not impair the current transport.
{"title":"Microscopic Origins of Contact Deterioration During Annealing of Silicon Heterojunction Solar Cell Contacts","authors":"Stefan Lange;Angelika Hähnel;Christoph Luderer;David Adner;Martin Bivour;Christian Hagendorf","doi":"10.1109/JPHOTOV.2023.3307822","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3307822","url":null,"abstract":"Over the last years, the dominating charge carrier transport barrier in silicon heterojunction (SHJ) solar cells could be boiled down to the contact of the indium–tin oxide (ITO) to the doped amorphous silicon (a-Si) layer. The formation of a parasitic oxide at this junction was hypothesized to act as a source for contact deterioration after annealing. However, no experimental proof could be obtained so far. In this contribution, we simultaneously investigate the contact resistivity and nanoscopic structure of the electron contact of a SHJ solar cell in the annealing temperature range between 140 \u0000<inline-formula><tex-math>$^circ text{C}$</tex-math></inline-formula>\u0000 and 240 \u0000<inline-formula><tex-math>$^circ text{C}$</tex-math></inline-formula>\u0000. For this purpose, micro transfer length measurements, time-of-flight secondary ion mass spectrometry, and electron–energy loss spectroscopy as well as energy-dispersive X-ray spectroscopy in a (scanning) transmission electron microscope are applied. A minimum contact resistivity of around 120 \u0000<inline-formula><tex-math>$text{m}Omega {text{cm}^{2}}$</tex-math></inline-formula>\u0000 is obtained at 160 \u0000<inline-formula><tex-math>$^circ text{C}$</tex-math></inline-formula>\u0000. At higher temperatures, the contact resistivities increase rapidly. This contact degradation correlates with the thickening of a parasitic silicon oxide layer found at the ITO/a-Si junction and an increase in Si oxidation state within this interlayer. Additionally, Ag from the metallization diffuses into the Si, which may induce deep acceptor trap states. Furthermore, a TiO\u0000<inline-formula><tex-math>${}_{text{x}}$</tex-math></inline-formula>\u0000 layer with \u0000<inline-formula><tex-math>${text{x}}sim {1}$</tex-math></inline-formula>\u0000 is proven between ITO and the AgPdTi metallization, which does not impair the current transport.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"777-786"},"PeriodicalIF":3.0,"publicationDate":"2023-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-01DOI: 10.1109/JPHOTOV.2023.3308259
Angelos I. Nousdilis;Georgios C. Kryonidis;Theofilos A. Papadopoulos
The intermittent and volatile nature of renewable energy sources (RESs) has introduced new technical challenges that affect the secure and reliable grid operation. These challenges can be tackled at the RES level by reducing power fluctuations with the use of power smoothing (PS) techniques. Several PS methods have been proposed in the literature to smooth RES output exploiting battery energy storage systems (BESSs). However, a comprehensive comparative evaluation of PS methods is missing. Moreover, the effect of the long-term PS operation on the BESS life is usually ignored in such analyses. This article proposes a methodology for the systematic evaluation of well-established PS techniques, comparing their effectiveness on the PS of photovoltaic output based on various signal metrics. In addition, an accurate aging model for lithium-ion batteries is employed to investigate the impact of PS on the BESS lifetime, highlighting the main parameters that influence capacity degradation.
{"title":"Comparative Evaluation of Solar Power Smoothing Techniques Considering Battery Degradation","authors":"Angelos I. Nousdilis;Georgios C. Kryonidis;Theofilos A. Papadopoulos","doi":"10.1109/JPHOTOV.2023.3308259","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3308259","url":null,"abstract":"The intermittent and volatile nature of renewable energy sources (RESs) has introduced new technical challenges that affect the secure and reliable grid operation. These challenges can be tackled at the RES level by reducing power fluctuations with the use of power smoothing (PS) techniques. Several PS methods have been proposed in the literature to smooth RES output exploiting battery energy storage systems (BESSs). However, a comprehensive comparative evaluation of PS methods is missing. Moreover, the effect of the long-term PS operation on the BESS life is usually ignored in such analyses. This article proposes a methodology for the systematic evaluation of well-established PS techniques, comparing their effectiveness on the PS of photovoltaic output based on various signal metrics. In addition, an accurate aging model for lithium-ion batteries is employed to investigate the impact of PS on the BESS lifetime, highlighting the main parameters that influence capacity degradation.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"951-957"},"PeriodicalIF":3.0,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-31DOI: 10.1109/JPHOTOV.2023.3306073
Qing Xiong;Angelo L. Gattozzi;Xianyong Feng;Charles E. Penney;Chen Zhang;Shengchang Ji;Shannon M. Strank;Robert E. Hebner
Photovoltaic systems provide electrical power with reduced emissions at competitive costs compared to legacy systems. A low or medium voltage dc distribution system is usually used for solar integration. In dc systems, parallel and series arc faults are a safety concern. Thus, reliable and timely detection and mitigation of arc faults are critical. DC arc detection methods typically use time or frequency spectrum variations of the circuit current or voltage to differentiate the arcing event from other system events. Since practical systems include power electronics and maximum-power-point tracking, any detection scheme must perform robustly in the electrical environment that these components establish in the dc power system. A capacitor placed in parallel with the main system is an effective sensor for series arc fault detection and localization applicable in this complex electrical environment. This article shows that the analysis of the amplitude, polarity, and spectrum characteristics of the capacitor current and voltage resulting from perturbations caused by the arc provides an effective method to identify and localize faults. The detection accuracy of the proposed approach is 98.3% and the localization accuracy rate is 100% for the correctly detected faults.
{"title":"Development of a Fault Detection and Localization Algorithm for Photovoltaic Systems","authors":"Qing Xiong;Angelo L. Gattozzi;Xianyong Feng;Charles E. Penney;Chen Zhang;Shengchang Ji;Shannon M. Strank;Robert E. Hebner","doi":"10.1109/JPHOTOV.2023.3306073","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3306073","url":null,"abstract":"Photovoltaic systems provide electrical power with reduced emissions at competitive costs compared to legacy systems. A low or medium voltage dc distribution system is usually used for solar integration. In dc systems, parallel and series arc faults are a safety concern. Thus, reliable and timely detection and mitigation of arc faults are critical. DC arc detection methods typically use time or frequency spectrum variations of the circuit current or voltage to differentiate the arcing event from other system events. Since practical systems include power electronics and maximum-power-point tracking, any detection scheme must perform robustly in the electrical environment that these components establish in the dc power system. A capacitor placed in parallel with the main system is an effective sensor for series arc fault detection and localization applicable in this complex electrical environment. This article shows that the analysis of the amplitude, polarity, and spectrum characteristics of the capacitor current and voltage resulting from perturbations caused by the arc provides an effective method to identify and localize faults. The detection accuracy of the proposed approach is 98.3% and the localization accuracy rate is 100% for the correctly detected faults.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"958-967"},"PeriodicalIF":3.0,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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