Pub Date : 2025-04-22DOI: 10.1109/JPHOTOV.2025.3556949
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/JPHOTOV.2025.3556949","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556949","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"511-512"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973201","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-22DOI: 10.1109/JPHOTOV.2025.3559276
{"title":"Call for Nominations for Editor-in-Chief IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/JPHOTOV.2025.3559276","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3559276","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"514-514"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973176","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-22DOI: 10.1109/JPHOTOV.2025.3559282
{"title":"Call for Nominations for Editor-in-Chief IEEE Electron Device Letters","authors":"","doi":"10.1109/JPHOTOV.2025.3559282","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3559282","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"515-515"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973173","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-22DOI: 10.1109/JPHOTOV.2025.3556951
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue","authors":"","doi":"10.1109/JPHOTOV.2025.3556951","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556951","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"513-513"},"PeriodicalIF":2.5,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10973180","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-21DOI: 10.1109/JPHOTOV.2025.3558270
Hesan Ziar
Sunlight throughout urban areas largely impacts local climate [sustainable development goal (SDG) 13], residents’ well-being (SDG 3), and access to clean energy (SDG 7). However, sunlight availability on various urban surfaces is affected by urban geometry. Here, in this work, a probabilistic framework to evaluate the interplay between sunlight and urban geometry is presented, and its immediate applications in urban energy studies are demonstrated. A probability mass function that predicts the energy production of a group of light-collecting surfaces, such as solar photovoltaic (PV) systems, installed in rough geometries, such as urban areas, is derived. Along the way, an expression for the sky view factor (SVF) is formulated within rough geometries as well as a link between the capacity factor of the residential PV fleet and urban geometry. The predictions of the mathematical framework are validated using the digital surface model and collected PV systems data in The Netherlands. This work primarily helps understand the underlying relation between the geometrical parameters of a rough surface and the received sunlight energy on a subset of that surface. Exemplified applications are swift SVF calculations and residential PV fleet yield predictions, which, respectively, support efficient urban energy assessments and privacy-preserving electrical grid management.
{"title":"Probability Mass Function of Energy for Light-Collecting Surfaces in Rough Geometries and Its Applications in Urban Energy and Photovoltaics","authors":"Hesan Ziar","doi":"10.1109/JPHOTOV.2025.3558270","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3558270","url":null,"abstract":"Sunlight throughout urban areas largely impacts local climate [sustainable development goal (SDG) 13], residents’ well-being (SDG 3), and access to clean energy (SDG 7). However, sunlight availability on various urban surfaces is affected by urban geometry. Here, in this work, a probabilistic framework to evaluate the interplay between sunlight and urban geometry is presented, and its immediate applications in urban energy studies are demonstrated. A probability mass function that predicts the energy production of a group of light-collecting surfaces, such as solar photovoltaic (PV) systems, installed in rough geometries, such as urban areas, is derived. Along the way, an expression for the sky view factor (SVF) is formulated within rough geometries as well as a link between the capacity factor of the residential PV fleet and urban geometry. The predictions of the mathematical framework are validated using the digital surface model and collected PV systems data in The Netherlands. This work primarily helps understand the underlying relation between the geometrical parameters of a rough surface and the received sunlight energy on a subset of that surface. Exemplified applications are swift SVF calculations and residential PV fleet yield predictions, which, respectively, support efficient urban energy assessments and privacy-preserving electrical grid management.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"566-576"},"PeriodicalIF":2.5,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-21DOI: 10.1109/JPHOTOV.2025.3556436
Dana B. Kern;Soňa Uličná;Dirk C. Jordan;Kent Terwilliger;Paul Ndione;Dennice Roberts;John S. Mangum;Steve Johnston;Michael Kempe;Michael Owen-Bellini;Laura T. Schelhas
We use sequential stress to investigate hurdles to bifacial photovoltaic (PV) module durability from lamination defects. We test mini-modules with glass/glass (G/G) and glass/transparent-backsheet (G/TB) constructions using either ethylene vinyl acetate or polyolefin elastomer (POE) based encapsulants under a modified IEC 63209-2 sequential stress. This sequence includes multiple iterations of damp heat (DH200), full spectrum light exposure (A3), thermal cycling (TC50), and humidity/freeze (HF10). We compare indoor stress with outdoor exposure. Results show similar relative trends in degradation after a year outdoors compared to our first stress cycle. Subsequent stress cycles impart more severe damage than outdoor exposure for the short outdoor duration used here. Edge-pinch lamination defects in G/G mini-modules limit durability causing delamination and cell cracks. Conversely, we observe greater degradation in G/TB mini-modules compared to G/G in the later stages of the stress sequence when the backsheets are directly exposed to UV-containing light. Our results highlight: 1) the utility of sequential stress testing to uncover degradation modes in bifacial PV, 2) implications of using mini-modules for testing PV quality, and 3) the importance of lamination defects that must be avoided to ensure durability as the industry adopts G/G or G/TB packaging.
{"title":"Sequential Stress Identifies Processing Defects in Bifacial Photovoltaic Modules That Limit Durability","authors":"Dana B. Kern;Soňa Uličná;Dirk C. Jordan;Kent Terwilliger;Paul Ndione;Dennice Roberts;John S. Mangum;Steve Johnston;Michael Kempe;Michael Owen-Bellini;Laura T. Schelhas","doi":"10.1109/JPHOTOV.2025.3556436","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556436","url":null,"abstract":"We use sequential stress to investigate hurdles to bifacial photovoltaic (PV) module durability from lamination defects. We test mini-modules with glass/glass (G/G) and glass/transparent-backsheet (G/TB) constructions using either ethylene vinyl acetate or polyolefin elastomer (POE) based encapsulants under a modified IEC 63209-2 sequential stress. This sequence includes multiple iterations of damp heat (DH200), full spectrum light exposure (A3), thermal cycling (TC50), and humidity/freeze (HF10). We compare indoor stress with outdoor exposure. Results show similar relative trends in degradation after a year outdoors compared to our first stress cycle. Subsequent stress cycles impart more severe damage than outdoor exposure for the short outdoor duration used here. Edge-pinch lamination defects in G/G mini-modules limit durability causing delamination and cell cracks. Conversely, we observe greater degradation in G/TB mini-modules compared to G/G in the later stages of the stress sequence when the backsheets are directly exposed to UV-containing light. Our results highlight: 1) the utility of sequential stress testing to uncover degradation modes in bifacial PV, 2) implications of using mini-modules for testing PV quality, and 3) the importance of lamination defects that must be avoided to ensure durability as the industry adopts G/G or G/TB packaging.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"549-556"},"PeriodicalIF":2.5,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-16DOI: 10.1109/JPHOTOV.2025.3556434
David C. Miller;Rachael L. Arnold;Peter L. Hacke;Steven C. Hayden;Aubrey Jackson;Steve Johnston;Katherine Jungjohann;John S. Mangum;Caleb Okrucky;Glenn Teeter;Kent Terwilliger;Marisol Valdez;Weston Wall;Logan M. Wilder;E. Ashley Gaulding
Corrosion of the antireflective coating on a photovoltaic cell (“${text{AR}}_{text{c}}$ corrosion”) has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, –1500 V, or unbiased (“$V_{text{oc}}$”) potential, which were sequentially subjected to test conditions of 60 °C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 °C/70% RH for 200 h; and 85 °C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current–voltage curve tracing. Final characterizations included: Suns–$V_{text{oc}}$, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ${text{AR}}_{text{c}}$ corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.
{"title":"Diagnosis of PV Cell Antireflective Coating Degradation Resulting From Hot-Humid High-Voltage Potential Aging","authors":"David C. Miller;Rachael L. Arnold;Peter L. Hacke;Steven C. Hayden;Aubrey Jackson;Steve Johnston;Katherine Jungjohann;John S. Mangum;Caleb Okrucky;Glenn Teeter;Kent Terwilliger;Marisol Valdez;Weston Wall;Logan M. Wilder;E. Ashley Gaulding","doi":"10.1109/JPHOTOV.2025.3556434","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3556434","url":null,"abstract":"Corrosion of the antireflective coating on a photovoltaic cell (“<inline-formula><tex-math>${text{AR}}_{text{c}}$</tex-math></inline-formula> corrosion”) has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable legacy aluminum back surface field cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, –1500 V, or unbiased (“<inline-formula><tex-math>$V_{text{oc}}$</tex-math></inline-formula>”) potential, which were sequentially subjected to test conditions of 60 °C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission Technical Specification 62804-1; 70 °C/70% RH for 200 h; and 85 °C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current–voltage curve tracing. Final characterizations included: Suns–<inline-formula><tex-math>$V_{text{oc}}$</tex-math></inline-formula>, spatial mapping of external quantum efficiency, high-resolution photoluminescence, EL, and dark lock-in thermography imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy, and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. <inline-formula><tex-math>${text{AR}}_{text{c}}$</tex-math></inline-formula> corrosion was specifically seen for the glass/encapsulant/cell side of the +1500 V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline corrosion and delamination, and other concurrent degradation modes. SEM/EDS and SAM identified the conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"523-532"},"PeriodicalIF":2.5,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-16DOI: 10.1109/JPHOTOV.2025.3558254
Emma Cooper;Kevin Anderson;Dan Riley
The climatic sensitivity of new terrain-aware backtracking algorithms is evaluated across 800 locations in the continental USA on a representative synthetic rolling terrain. We find that a global optimization approach to backtracking results in climate-specific annual energy gains of 2.4%–3.2% relative to a traditional backtracking algorithm baseline. We identify a strong logarithmic correlation between local diffuse fraction and yield improvement, and highlight the effect of seasonal precipitation on performance gains. We also find that a backtracking approach, which approximates the terrain as constant, does not offer significant annual energy gains over the baseline on the synthetic terrain. Our findings suggest that specific yield from backtracking in the USA can be improved by as much as 88 kWh/kW by considering terrain when selecting a backtracking algorithm.
{"title":"Performance Improvements Through Advanced PV Backtracking on Uneven Terrain","authors":"Emma Cooper;Kevin Anderson;Dan Riley","doi":"10.1109/JPHOTOV.2025.3558254","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3558254","url":null,"abstract":"The climatic sensitivity of new terrain-aware backtracking algorithms is evaluated across 800 locations in the continental USA on a representative synthetic rolling terrain. We find that a global optimization approach to backtracking results in climate-specific annual energy gains of 2.4%–3.2% relative to a traditional backtracking algorithm baseline. We identify a strong logarithmic correlation between local diffuse fraction and yield improvement, and highlight the effect of seasonal precipitation on performance gains. We also find that a backtracking approach, which approximates the terrain as constant, does not offer significant annual energy gains over the baseline on the synthetic terrain. Our findings suggest that specific yield from backtracking in the USA can be improved by as much as 88 kWh/kW by considering terrain when selecting a backtracking algorithm.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"593-599"},"PeriodicalIF":2.5,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10966030","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-07DOI: 10.1109/JPHOTOV.2025.3554315
Takaya Sugiura;Yuta Watanabe
This study explores strategies for safeguarding complementary metal–oxide–semiconductor (CMOS) field-effect-transistors (FETs) and PN-diode against bulk carrier contamination for energy harvesting applications. Energy harvesting processes can generate excessive carriers within the bulk region, which can penetrate the PMOS region from the p(P-Sub)/n(NWell) junction or nmosfet without triple-well. To address this problem, this study investigated the effectiveness of a guard ring structure in protecting cmosfets and PN-diode by recombining carriers in their vicinities. The formation of unpassivated metals around cmosfets serves as a catalyst for carrier elimination before they penetrate the NWell region of a pmosfet or the nmosfet itself, thereby improving the off states of both FETs. For a PN diode, the smaller off-current and lower threshold voltage obtained are advantageous for low-power consumption. However, such guard ring also degrades the performance of a photovoltaic (PV) cell by recombining the carriers needed by the cell to generate power. The experimental study of PV cells w/back-surface-field (BSF) and w/o BSF revealed that the former reduced the $V_{text{OC}}$ of the cell with and that caution is required when forming a guard ring nearby the PV cell.
{"title":"Guard Ring Designs on Photovoltaic Energy Harvesting Silicon LSIs","authors":"Takaya Sugiura;Yuta Watanabe","doi":"10.1109/JPHOTOV.2025.3554315","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3554315","url":null,"abstract":"This study explores strategies for safeguarding complementary metal–oxide–semiconductor (CMOS) field-effect-transistors (FETs) and PN-diode against bulk carrier contamination for energy harvesting applications. Energy harvesting processes can generate excessive carriers within the bulk region, which can penetrate the PMOS region from the p(P-Sub)/n(NWell) junction or <sc>nmosfet</small> without triple-well. To address this problem, this study investigated the effectiveness of a guard ring structure in protecting <sc>cmosfet</small>s and PN-diode by recombining carriers in their vicinities. The formation of unpassivated metals around <sc>cmosfet</small>s serves as a catalyst for carrier elimination before they penetrate the NWell region of a <sc>pmosfet</small> or the <sc>nmosfet</small> itself, thereby improving the <sc>off</small> states of both FETs. For a PN diode, the smaller off-current and lower threshold voltage obtained are advantageous for low-power consumption. However, such guard ring also degrades the performance of a photovoltaic (PV) cell by recombining the carriers needed by the cell to generate power. The experimental study of PV cells w/back-surface-field (BSF) and w/o BSF revealed that the former reduced the <inline-formula><tex-math>$V_{text{OC}}$</tex-math></inline-formula> of the cell with and that caution is required when forming a guard ring nearby the PV cell.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"420-426"},"PeriodicalIF":2.5,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-07DOI: 10.1109/JPHOTOV.2025.3554338
Kevin S. Anderson;Clifford W. Hansen;Marios Theristis
Photovoltaic performance modeling accuracy depends heavily on the quality of the input parameters. When relying on generic PAN files and datasheets, the input parameters often fail to accurately capture the behavior of every module with the same model number. Therefore, there is a need for methods to generate more accurate input data. In this study, we present a method for determining parameter values for the PVsyst version 6 photovoltaic module performance model from performance test measurements following the IEC 61853-1:2011 standard. The method is intentionally noniterative to facilitate implementation and reproducibility. We apply the method to datasets from 15 modules of various photovoltaic technologies (SHJ, TOPCon, IBC, PERC, n-PERT, Al-BSF, and CdTe), reproducing the original maximum power measurements with root-mean-squared (RMS) accuracy within 0.5% in all cases. The method's accuracy is compared to that of two iterative methods.
{"title":"A Noniterative Method of Estimating Parameter Values for the PVsyst Version 6 Single-Diode Model From IEC 61853-1 Matrix Measurements","authors":"Kevin S. Anderson;Clifford W. Hansen;Marios Theristis","doi":"10.1109/JPHOTOV.2025.3554338","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3554338","url":null,"abstract":"Photovoltaic performance modeling accuracy depends heavily on the quality of the input parameters. When relying on generic PAN files and datasheets, the input parameters often fail to accurately capture the behavior of every module with the same model number. Therefore, there is a need for methods to generate more accurate input data. In this study, we present a method for determining parameter values for the PVsyst version 6 photovoltaic module performance model from performance test measurements following the IEC 61853-1:2011 standard. The method is intentionally noniterative to facilitate implementation and reproducibility. We apply the method to datasets from 15 modules of various photovoltaic technologies (SHJ, TOPCon, IBC, PERC, n-PERT, Al-BSF, and CdTe), reproducing the original maximum power measurements with root-mean-squared (RMS) accuracy within 0.5% in all cases. The method's accuracy is compared to that of two iterative methods.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"492-499"},"PeriodicalIF":2.5,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10955246","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：