Pub Date : 2023-11-06DOI: 10.1109/JPHOTOV.2023.3329615
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Pub Date : 2023-11-06DOI: 10.1109/JPHOTOV.2023.3327848
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Pub Date : 2023-11-06DOI: 10.1109/JPHOTOV.2023.3322305
Angus Rockett
This issue of the IEEE JOURNAL OF PHOTOVOLTAICS (JPV) contains a number of articles I think you will find interesting. We have a new opportunity in this issue.We now have cover art developed from the review article that is the first paper. This is the latest update by Haegel and Kurtz on the current status of photovoltaics and other renewable energy technologies in global energy generation. The cover art highlights the figure displaying the fraction of capacity, generation, and new installed capacity from hydrocarbons, nuclear, wind, hydro, and photovoltaic technologies. The history from 2018 to 2022 is provided. In addition to this figure, the article highlights a variety of trends. One of the useful additions to this version of the manuscript is the addition of current trends in energy storage in the United States. Data for global energy storage were not available to the authors, but the United States trend is representative of the trend in energy storage. I hope that you will find the article useful as a reference to set the scene in your papers related to renewable energy.
{"title":"Editorial Introduction to the November 2023 Issue of the IEEE Journal of Photovoltaics","authors":"Angus Rockett","doi":"10.1109/JPHOTOV.2023.3322305","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3322305","url":null,"abstract":"This issue of the IEEE JOURNAL OF PHOTOVOLTAICS (JPV) contains a number of articles I think you will find interesting. We have a new opportunity in this issue.We now have cover art developed from the review article that is the first paper. This is the latest update by Haegel and Kurtz on the current status of photovoltaics and other renewable energy technologies in global energy generation. The cover art highlights the figure displaying the fraction of capacity, generation, and new installed capacity from hydrocarbons, nuclear, wind, hydro, and photovoltaic technologies. The history from 2018 to 2022 is provided. In addition to this figure, the article highlights a variety of trends. One of the useful additions to this version of the manuscript is the addition of current trends in energy storage in the United States. Data for global energy storage were not available to the authors, but the United States trend is representative of the trend in energy storage. I hope that you will find the article useful as a reference to set the scene in your papers related to renewable energy.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"767-767"},"PeriodicalIF":3.0,"publicationDate":"2023-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71903082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.1109/JPHOTOV.2023.3304118
Michael Winter;Dominic C. Walter;Jan Schmidt
The fast-firing step commonly applied at the end of solar cell production lines triggers “Light- and elevated-Temperature-Induced Degradation” (LeTID) effects of the carrier lifetime in Ga-doped Cz–Si wafers and solar cells made thereof. As far as the defect formation within the silicon bulk is concerned, the key parameters of the fast-firing step are the peak firing temperature (FT) and the band velocity vband of the conveyor belt, where the latter mainly defines the cooling ramp after the firing peak. In this contribution, we show that the extent of LeTID and the dependence on the applied temperature during degradation increase strongly with increasing measured FT (from 680 °C to 800 °C), vband (from 2.8 to 7.2 m/min), and the refractive index n of the hydrogen-rich silicon nitride layer deposited on the wafer surfaces (from 2.07 to 2.37). Through temperature-dependent degradation experiments, we determine an activation energy of EA = (0.55 ± 0.10) eV of the LeTID mechanism in Ga-doped Cz–Si, which is independent of FT and vband. From this observation we conclude that a single defect activation mechanism is most likely responsible for the examined LeTID effect, independent of the firing conditions. However, the concentration of recombination-active defect centers after LeTID depends critically on FT, vband, and n, which we attribute to variations of the in-diffused hydrogen concentrations from the silicon nitride layers during firing. Our experiments hence point towards an involvement of hydrogen in the LeTID mechanism observed in Ga-doped Cz–Si.
{"title":"Impact of Fast-Firing Conditions on Light- and Elevated-Temperature-Induced Degradation (LeTID) in Ga-Doped Cz–Si","authors":"Michael Winter;Dominic C. Walter;Jan Schmidt","doi":"10.1109/JPHOTOV.2023.3304118","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2023.3304118","url":null,"abstract":"The fast-firing step commonly applied at the end of solar cell production lines triggers “Light- and elevated-Temperature-Induced Degradation” (LeTID) effects of the carrier lifetime in Ga-doped Cz–Si wafers and solar cells made thereof. As far as the defect formation within the silicon bulk is concerned, the key parameters of the fast-firing step are the peak firing temperature (<italic>FT</italic>) and the band velocity <italic>v</italic><sub>band</sub> of the conveyor belt, where the latter mainly defines the cooling ramp after the firing peak. In this contribution, we show that the extent of LeTID and the dependence on the applied temperature during degradation increase strongly with increasing measured <italic>FT</italic> (from 680 °C to 800 °C), <italic>v</italic><sub>band</sub> (from 2.8 to 7.2 m/min), and the refractive index <italic>n</italic> of the hydrogen-rich silicon nitride layer deposited on the wafer surfaces (from 2.07 to 2.37). Through temperature-dependent degradation experiments, we determine an activation energy of <italic>E</italic><sub>A</sub> = (0.55 ± 0.10) eV of the LeTID mechanism in Ga-doped Cz–Si, which is independent of <italic>FT</italic> and <italic>v</italic><sub>band</sub>. From this observation we conclude that a single defect activation mechanism is most likely responsible for the examined LeTID effect, independent of the firing conditions. However, the concentration of recombination-active defect centers after LeTID depends critically on <italic>FT</italic>, <italic>v</italic><sub>band</sub>, and <italic>n</italic>, which we attribute to variations of the in-diffused hydrogen concentrations from the silicon nitride layers during firing. Our experiments hence point towards an involvement of hydrogen in the LeTID mechanism observed in Ga-doped Cz–Si.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"13 6","pages":"849-857"},"PeriodicalIF":3.0,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71902903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-11-01DOI: 10.1109/JPHOTOV.2023.3324186
Abdel-Menem Elnemr;A. M. Ghander;Ibrahim A. El-Sayed;Hytham Elbohy
Dye-sensitized solar cells (DSSCs)’ photovoltaic conversion efficiency is decreased by recombination reactions at the photo anode/electrolyte interface. Herein, a new molybdenum trioxide ( $text{MoO}_{3}$