Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79832
B. Tadayon, S. Tadayon, W. Schaff, M. Spencer, G. Harris, J. Griffin, P. Tasker, C. Wood, L. Eastman
It has been demonstrated that the migration-enhanced epitaxy (MEE) method can be used to grow high-quality GaAs at low substrate temperature. Annealed MEE layers are shown to have hole concentration mobility, surface morphology, and optical characteristics comparable to those of MBE (molecular beam epitaxy) layers. Because of the reduction of Be diffusion in annealed MEE layers, relative to MBE layers, the MEE method can replace the conventional MBE method for device applications which require high hole concentration with small Be diffusion. As the anneal time increases, the hole sheet density increases and reaches some final value. A higher anneal temperature results in high electrical activation in a shorter anneal time. For annealing below 1000 degrees C, the electrical activation monotonically increases as the anneal temperature increases. For 15-s anneal time, the hole sheet and the mobility peak at the anneal temperatures of 1000 and 900 degrees C, respectively.<>
{"title":"Reduction of Be diffusion in GaAs by migration enhanced epitaxy, and the effect of heat treatment on the electrical activation and mobility","authors":"B. Tadayon, S. Tadayon, W. Schaff, M. Spencer, G. Harris, J. Griffin, P. Tasker, C. Wood, L. Eastman","doi":"10.1109/CORNEL.1989.79832","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79832","url":null,"abstract":"It has been demonstrated that the migration-enhanced epitaxy (MEE) method can be used to grow high-quality GaAs at low substrate temperature. Annealed MEE layers are shown to have hole concentration mobility, surface morphology, and optical characteristics comparable to those of MBE (molecular beam epitaxy) layers. Because of the reduction of Be diffusion in annealed MEE layers, relative to MBE layers, the MEE method can replace the conventional MBE method for device applications which require high hole concentration with small Be diffusion. As the anneal time increases, the hole sheet density increases and reaches some final value. A higher anneal temperature results in high electrical activation in a shorter anneal time. For annealing below 1000 degrees C, the electrical activation monotonically increases as the anneal temperature increases. For 15-s anneal time, the hole sheet and the mobility peak at the anneal temperatures of 1000 and 900 degrees C, respectively.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131045882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79829
J. Hinckley, V. Sankaran, J. Singh, S. Tiwari
Charge-carrier transport in pseudomorphically strained Si/sub 0.8/Ge/sub 0.2/ grown on
伪晶应变Si/sub 0.8/Ge/sub 0.2/上的载流子输运
{"title":"An evaluation of Si and SiGe base bipolar transistors for high frequency and high speed applications-basic transport and design","authors":"J. Hinckley, V. Sankaran, J. Singh, S. Tiwari","doi":"10.1109/CORNEL.1989.79829","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79829","url":null,"abstract":"Charge-carrier transport in pseudomorphically strained Si/sub 0.8/Ge/sub 0.2/ grown on","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123726680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79857
W. Peatman, T. Crowe
The optimization of GaAs Schottky barrier mixer diodes for use in heterodyne receivers in the frequency range from 1-3 THz is investigated. The principal design rules are: (1) the substrate doping must be as high as possible to minimize series resistance; (2) the diode cutoff frequency must be increased as much as possible, which requires a small anode diameter and a higher epilayer doping density than has previously been used; and (3) the diode's RF impedance must be made to match the impedance of the corner cube antenna, which requires a low junction capacitance. To achieve these goals, a nominal epilayer doping density of 5*10/sup 17/ cm/sup -3/, an anode diameter of 0.5 mu m, and the most highly doped substrate available (4.5*10/sup 18/ cm/sup -3/) were used. The diodes were fabricated with UV lithography and reactive ion etching. The resulting figure-of-merit cutoff frequency (10.6 THz) and zero-bias junction capacitance (0.4-0.5 fF) are both state of the art. The diodes have been RF-tested at 1.5 THz and yielded significant improvements in receiver sensitivity and reduced LO (local oscillator) power requirements.<>
{"title":"Design and fabrication of ultra-small GaAs Schottky barrier diodes for low-noise tetrahertz receiver applications","authors":"W. Peatman, T. Crowe","doi":"10.1109/CORNEL.1989.79857","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79857","url":null,"abstract":"The optimization of GaAs Schottky barrier mixer diodes for use in heterodyne receivers in the frequency range from 1-3 THz is investigated. The principal design rules are: (1) the substrate doping must be as high as possible to minimize series resistance; (2) the diode cutoff frequency must be increased as much as possible, which requires a small anode diameter and a higher epilayer doping density than has previously been used; and (3) the diode's RF impedance must be made to match the impedance of the corner cube antenna, which requires a low junction capacitance. To achieve these goals, a nominal epilayer doping density of 5*10/sup 17/ cm/sup -3/, an anode diameter of 0.5 mu m, and the most highly doped substrate available (4.5*10/sup 18/ cm/sup -3/) were used. The diodes were fabricated with UV lithography and reactive ion etching. The resulting figure-of-merit cutoff frequency (10.6 THz) and zero-bias junction capacitance (0.4-0.5 fF) are both state of the art. The diodes have been RF-tested at 1.5 THz and yielded significant improvements in receiver sensitivity and reduced LO (local oscillator) power requirements.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"368 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115658590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79836
J. Bellantoni, R. Compton
A new coplanar-waveguide network analyzer system that is specifically designed for on-wafer characterization of millimeter-wave devices and circuits is presented. The analyzer is made entirely in coplanar-waveguide to achieve large bandwidths and eliminate all discontinuities between the test set and wafer except the probe tip contacts. The analyzer is made by spacing detector diodes logarithmically along the coplanar-waveguide probe-tip to sample the signal, and it uses six-port theory to calculate complex scattering parameters. A 15.7-GHz prototype analyzer has been demonstrated.<>
{"title":"A new coplanar waveguide vector network analyzer for on-wafer measurements","authors":"J. Bellantoni, R. Compton","doi":"10.1109/CORNEL.1989.79836","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79836","url":null,"abstract":"A new coplanar-waveguide network analyzer system that is specifically designed for on-wafer characterization of millimeter-wave devices and circuits is presented. The analyzer is made entirely in coplanar-waveguide to achieve large bandwidths and eliminate all discontinuities between the test set and wafer except the probe tip contacts. The analyzer is made by spacing detector diodes logarithmically along the coplanar-waveguide probe-tip to sample the signal, and it uses six-port theory to calculate complex scattering parameters. A 15.7-GHz prototype analyzer has been demonstrated.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129663853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79842
A. Seabaugh, W. Frensley, Y. Kao, J. Randall, M. Reed
The authors demonstrate bipolar resonant-tunneling transistors and propose unipolar transistors which are formed by making direct contact with the quantum well of a resonant-tunneling diode structure. The characteristics of this resonant-tunneling hot electron transistor (RHET), known as the QuESTT (quantum excited-state tunneling transistor), are examined. Both digital and microwave applications for these devices are discussed.<>
{"title":"Quantum-well resonant-tunneling transistors","authors":"A. Seabaugh, W. Frensley, Y. Kao, J. Randall, M. Reed","doi":"10.1109/CORNEL.1989.79842","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79842","url":null,"abstract":"The authors demonstrate bipolar resonant-tunneling transistors and propose unipolar transistors which are formed by making direct contact with the quantum well of a resonant-tunneling diode structure. The characteristics of this resonant-tunneling hot electron transistor (RHET), known as the QuESTT (quantum excited-state tunneling transistor), are examined. Both digital and microwave applications for these devices are discussed.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"498 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116197829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79853
W. Li, Y. Zebda, P. Bhattacharya, D. Pavlidis, J. Oh, J. Pamulapati
Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g/sub m/=450 mS/mm and f/sub T/=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g/sub m/=250 mS/mm, f/sub T/=12 GHz, and f/sub max/=21 GHz.<>
{"title":"Monolithically integrated GaAs-based and InP-based front-end photoreceivers","authors":"W. Li, Y. Zebda, P. Bhattacharya, D. Pavlidis, J. Oh, J. Pamulapati","doi":"10.1109/CORNEL.1989.79853","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79853","url":null,"abstract":"Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g/sub m/=450 mS/mm and f/sub T/=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g/sub m/=250 mS/mm, f/sub T/=12 GHz, and f/sub max/=21 GHz.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"641 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116086584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79843
Tsai-Hao Kuo, H.C. Lin, R. Potter, D. Shupe
A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.<>
{"title":"A/D converter using InGaAs/InAlAs resonant-tunneling diodes","authors":"Tsai-Hao Kuo, H.C. Lin, R. Potter, D. Shupe","doi":"10.1109/CORNEL.1989.79843","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79843","url":null,"abstract":"A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123198326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79824
P. Schmidt, E. Barbier, P. Collot, D. Pons
The authors report a pseudomorphic semiconductor-insulator-semiconductor field-effect transistor (PM-SISFET) that uses a thin layer of undoped GaInAs instead of GaAs as the channel-forming layer. The device consists of an undoped AlGaAs barrier layer, a heavily doped n-type GaAs gate, and an upper GaInAs contact layer. With this structure, the device has a naturally negative threshold voltage. The structures were grown by molecular beam epitaxy. The devices were fabricated using, as for conventional GaAs SISFETs, self-aligned ion implantation and rapid thermal annealing (RTA). High-resolution photoluminescence spectra at 4.2 K for both the as-grown layer and after RTA have a FWHM (full width at half-maximum) of 3.1 MeV for a 120-AA-thick GaInAs channel layer with an In content of about 12%. These measurements indicate that no structural degradation of the strained layer occurred during annealing. To compare performance, the authors also grew and processed conventional GaAs/AlGaAs/n/sup +/-GaAs SISFETs. At 300 K, the 1- mu m-gate-length devices showed transconductances and drain currents in excess of 270 mS/mm and 250 mA/mm, respectively, for PM-SISFETs compared to 240 mS/mm and 200 mA/mm, respectively, for similar conventional SISFETs.<>
{"title":"A pseudomorphic GaAs/GaInAs/AlGaAs SISFET","authors":"P. Schmidt, E. Barbier, P. Collot, D. Pons","doi":"10.1109/CORNEL.1989.79824","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79824","url":null,"abstract":"The authors report a pseudomorphic semiconductor-insulator-semiconductor field-effect transistor (PM-SISFET) that uses a thin layer of undoped GaInAs instead of GaAs as the channel-forming layer. The device consists of an undoped AlGaAs barrier layer, a heavily doped n-type GaAs gate, and an upper GaInAs contact layer. With this structure, the device has a naturally negative threshold voltage. The structures were grown by molecular beam epitaxy. The devices were fabricated using, as for conventional GaAs SISFETs, self-aligned ion implantation and rapid thermal annealing (RTA). High-resolution photoluminescence spectra at 4.2 K for both the as-grown layer and after RTA have a FWHM (full width at half-maximum) of 3.1 MeV for a 120-AA-thick GaInAs channel layer with an In content of about 12%. These measurements indicate that no structural degradation of the strained layer occurred during annealing. To compare performance, the authors also grew and processed conventional GaAs/AlGaAs/n/sup +/-GaAs SISFETs. At 300 K, the 1- mu m-gate-length devices showed transconductances and drain currents in excess of 270 mS/mm and 250 mA/mm, respectively, for PM-SISFETs compared to 240 mS/mm and 200 mA/mm, respectively, for similar conventional SISFETs.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"07 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122720778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79844
H. Mizuta, T. Tanoue, S. Takahashi
A theoretical approach to resonant tunneling phenomena in multibarrier heterostructures is developed and successfully applied to the GaAs/AlGaAs triple-well resonant-tunneling diode. By introducing both the Hartree self-consistent field model and the scattering broadening model in the conventional formula, the mechanism for the P/V (peak/valley) current ratio degradation is quantitatively analyzed. The calculated results reveal that electron buildup in the first well shifts an injection level, resulting in a large decrease in second peak current with decreasing temperature. The calculated temperature dependence is in good agreement with experimental data. It is further found that the ratio of the scattering broadening Gamma /sub s/ to the intrinsic broadening Gamma /sub i/ is the main factor which determines the degradation of the P/V current ratio. As this ratio increases and exceeds unity, the P/V ratio steeply decreases. In a comparison of the calculations and experimental data, Gamma /sub s/ is estimated to be approximately 2.5 MeV, which agrees well with the value roughly evaluated from the momentum relaxation time due to LO-phonon scattering.<>
{"title":"Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes","authors":"H. Mizuta, T. Tanoue, S. Takahashi","doi":"10.1109/CORNEL.1989.79844","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79844","url":null,"abstract":"A theoretical approach to resonant tunneling phenomena in multibarrier heterostructures is developed and successfully applied to the GaAs/AlGaAs triple-well resonant-tunneling diode. By introducing both the Hartree self-consistent field model and the scattering broadening model in the conventional formula, the mechanism for the P/V (peak/valley) current ratio degradation is quantitatively analyzed. The calculated results reveal that electron buildup in the first well shifts an injection level, resulting in a large decrease in second peak current with decreasing temperature. The calculated temperature dependence is in good agreement with experimental data. It is further found that the ratio of the scattering broadening Gamma /sub s/ to the intrinsic broadening Gamma /sub i/ is the main factor which determines the degradation of the P/V current ratio. As this ratio increases and exceeds unity, the P/V ratio steeply decreases. In a comparison of the calculations and experimental data, Gamma /sub s/ is estimated to be approximately 2.5 MeV, which agrees well with the value roughly evaluated from the momentum relaxation time due to LO-phonon scattering.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128795227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79847
D. Whitson, M. Paulus, C. E. Stutz, E. Koenig, R. Neidhard, E. Davis
The authors present a novel small-signal model for the QWITT (quantum-well injection transit time) diode, which combines a recently proposed QWD (quantum-well diode) equivalent circuit with the distributed impedance model for the drift region. Both the QWD model and the QWITT model consider the effect of carrier delays in the quasi-bound state and drift region. To test QWD and QWITT models, the authors grew three different 5.1-nm-AlGaAs/5.1-nm-GaAs/5.1-nm-AlGaAs double-barrier structures by molecular beam epitaxy with different anode drift layer lengths. They obtained experimental impedance parameters for the fabricated diodes using an HP 8510B Automated Network Analyzer with cascade probes and fit the QWD and QWITT equivalent circuits to the data using analytical and numerical techniques. It is shown that QWDs and QWITTs are essentially the same device and may be modeled using the QWD or QWITT equivalent circuit with equal accuracy. The QWITT model is found to be preferable to the QWD model as a design tool because the drift region is treated separately.<>
{"title":"An improved small signal QWITT diode model including quantum well carrier lifetime effects","authors":"D. Whitson, M. Paulus, C. E. Stutz, E. Koenig, R. Neidhard, E. Davis","doi":"10.1109/CORNEL.1989.79847","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79847","url":null,"abstract":"The authors present a novel small-signal model for the QWITT (quantum-well injection transit time) diode, which combines a recently proposed QWD (quantum-well diode) equivalent circuit with the distributed impedance model for the drift region. Both the QWD model and the QWITT model consider the effect of carrier delays in the quasi-bound state and drift region. To test QWD and QWITT models, the authors grew three different 5.1-nm-AlGaAs/5.1-nm-GaAs/5.1-nm-AlGaAs double-barrier structures by molecular beam epitaxy with different anode drift layer lengths. They obtained experimental impedance parameters for the fabricated diodes using an HP 8510B Automated Network Analyzer with cascade probes and fit the QWD and QWITT equivalent circuits to the data using analytical and numerical techniques. It is shown that QWDs and QWITTs are essentially the same device and may be modeled using the QWD or QWITT equivalent circuit with equal accuracy. The QWITT model is found to be preferable to the QWD model as a design tool because the drift region is treated separately.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127518773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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