Pub Date : 2018-10-03DOI: 10.1007/978-3-030-23303-7
K. W. Böer, U. W. Pohl
{"title":"Superconductivity","authors":"K. W. Böer, U. W. Pohl","doi":"10.1007/978-3-030-23303-7","DOIUrl":"https://doi.org/10.1007/978-3-030-23303-7","url":null,"abstract":"","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"104 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"2018-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85549026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Haché, Y. Kostoulas, R. Atanasov, J. Fraser, J. Sipe, H. V. van Driel
Historically, phase has received little attention as a parameter which can be used to control the properties of matter. Recently, however, coherence control of physical and chemical properties of simple systems using two or more laser beams has been demonstrated [1-3]. The possibility of influencing the phase of matter by controlling the phase of light arises from the fact that two or more phased perturbations which can connect the same initial and final states in a system can lead to interference effects between the different quantum mechanical pathways and therefore influence the final state of matter. In this talk we report two manifestations of this effect in bulk semiconductors, namely the generation and control of carrier density and electrical currents [3] in a bulk, unbiased semiconductor when both initial and final states are in the continuum (valence and conduction bands). The observations of such effects is not only intellectually appealing but may point the way to novel device applications. In initial experiments, control has been achieved in GaAs at room temperature using picosecond and 100 fs optical pulses at 1550 and 775 nm. The talk will focus on the description of these phenomena in terms of quantum mechanics as well as nonlinear optics. The influence of beam parameters and sample characteristics will be discussed.
{"title":"Coherent Control Of Semiconductor Optoelectronic Properties","authors":"A. Haché, Y. Kostoulas, R. Atanasov, J. Fraser, J. Sipe, H. V. van Driel","doi":"10.1364/qo.1997.qwb.3","DOIUrl":"https://doi.org/10.1364/qo.1997.qwb.3","url":null,"abstract":"Historically, phase has received little attention as a parameter which can be used to control the properties of matter. Recently, however, coherence control of physical and chemical properties of simple systems using two or more laser beams has been demonstrated [1-3]. The possibility of influencing the phase of matter by controlling the phase of light arises from the fact that two or more phased perturbations which can connect the same initial and final states in a system can lead to interference effects between the different quantum mechanical pathways and therefore influence the final state of matter. In this talk we report two manifestations of this effect in bulk semiconductors, namely the generation and control of carrier density and electrical currents [3] in a bulk, unbiased semiconductor when both initial and final states are in the continuum (valence and conduction bands). The observations of such effects is not only intellectually appealing but may point the way to novel device applications. In initial experiments, control has been achieved in GaAs at room temperature using picosecond and 100 fs optical pulses at 1550 and 775 nm. The talk will focus on the description of these phenomena in terms of quantum mechanics as well as nonlinear optics. The influence of beam parameters and sample characteristics will be discussed.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"30 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72839681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multi-wavelength integrated light sources are key devices for future large scale wavelength division multiplexing (WDM) systems. One of important issues is precise control of lasing wavelength of each element. Large temperature sensitivity of lasing wavelength is also a remaining problem. Recently, wavelength stabilization of semiconductor lasers using strain was demonstrated [1]. Also, wavelength trimming technique was proposed for post-process precise control of wavelength [2].
{"title":"Wavelength Stabilization and Trimming Technologies for Vertical Cavity Surface Emitting Lasers","authors":"F. Koyama, K. Iga","doi":"10.1364/qo.1997.qthe.7","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.7","url":null,"abstract":"Multi-wavelength integrated light sources are key devices for future large scale wavelength division multiplexing (WDM) systems. One of important issues is precise control of lasing wavelength of each element. Large temperature sensitivity of lasing wavelength is also a remaining problem. Recently, wavelength stabilization of semiconductor lasers using strain was demonstrated [1]. Also, wavelength trimming technique was proposed for post-process precise control of wavelength [2].","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"2 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72873257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Semiconductor photonic crystals are promising candidates for realizing spontaneous emission control, i.e., enhancement of spontaneous emission rate (SER) and spontaneous emission factor. Schematic structure of various dimensions of photonic crystal and corresponding wave vector space inhibited by photonic bandgaps (PBGs) are summarized in Fig. 1. Due to the almost perfect PBG and single mode localized state, 3D structures are ideal. However, structures for optical wavelength range are still difficult to fabricate. We have studied 2D structures1,2) to confirm preliminary effects of photonic crystals. In this study, we simply predict the spontaneous emission control in 2D structures, and report the experiment to observe PBG in GaInAsP/InP 2D photonic crystals.
{"title":"Observation of Photonic Bandgap in GaInAsP/InP 2D Photonic Crystals by Equivalent Transmission Measurement","authors":"T. Baba, M. Ikeda, N. Kamizawa","doi":"10.1364/qo.1997.qtha.3","DOIUrl":"https://doi.org/10.1364/qo.1997.qtha.3","url":null,"abstract":"Semiconductor photonic crystals are promising candidates for realizing spontaneous emission control, i.e., enhancement of spontaneous emission rate (SER) and spontaneous emission factor. Schematic structure of various dimensions of photonic crystal and corresponding wave vector space inhibited by photonic bandgaps (PBGs) are summarized in Fig. 1. Due to the almost perfect PBG and single mode localized state, 3D structures are ideal. However, structures for optical wavelength range are still difficult to fabricate. We have studied 2D structures1,2) to confirm preliminary effects of photonic crystals. In this study, we simply predict the spontaneous emission control in 2D structures, and report the experiment to observe PBG in GaInAsP/InP 2D photonic crystals.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"31 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88226517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Interest in broken-gap, type-II heterostructures for optoelectronic applications is predicated largely on their promise as infrared lasers, detectors, and modulators appreciably outperforming conventional devices. Cryogenic imaging arrays based on these structures are projected to perform with higher detectivities and/or at higher operating temperatures than competing systems based on HgCdTe or extrinsic materials. Lasers in the 3-5μm spectral band are expected to operate at or near room temperature with significant output powers, and modulators with unusually low insertion losses and high dynamic range have been proposed. Brought to maturity, applications of such devices would be numerous, ranging from environmental monitoring systems to short-link, high bandwidth optical communications.
{"title":"Type-II Superlattices for Infrared Optoelectronics and Lasers","authors":"R. Miles, M. Flatté","doi":"10.1364/qo.1997.qfa.3","DOIUrl":"https://doi.org/10.1364/qo.1997.qfa.3","url":null,"abstract":"Interest in broken-gap, type-II heterostructures for optoelectronic applications is predicated largely on their promise as infrared lasers, detectors, and modulators appreciably outperforming conventional devices. Cryogenic imaging arrays based on these structures are projected to perform with higher detectivities and/or at higher operating temperatures than competing systems based on HgCdTe or extrinsic materials. Lasers in the 3-5μm spectral band are expected to operate at or near room temperature with significant output powers, and modulators with unusually low insertion losses and high dynamic range have been proposed. Brought to maturity, applications of such devices would be numerous, ranging from environmental monitoring systems to short-link, high bandwidth optical communications.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"29 6 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75720711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Forward optical parametric oscillators (OPO’s) based on quasi-phase matching (QPM) were implemented in LiNbO3 [1], However, a forward OPO requires a cavity to establish oscillation. Harris [2] introduced the concept of a backward OPO (BOPO) based on conventional phase matching: a cavity is not required to establish oscillation. However, in Ref. [2], only a threshold condition was obtained. Here, we present our results on BOPO’s [3] and transversely-pumped counter-propagating OPO’s (TPCOPO’s) [4]. A TPCOPO does not require a cavity to establish oscillation either. Second-order susceptibility of a nonlinear medium is spatially modulated with a period the pump wavelength in the medium to achieve QPM. A pump wave at the wavelength in vacuum λ3 propagates along a waveguide for a BOPO or onto the surface for a TPCOPO. Two counter-propagating waves at the wavelengths λ1 and λ2 can be generated in the nonlinear medium. To tune the output frequencies of the signal and idler, we can change the incident angle of the pump wave in the TPCOPO or BOPO. The gain for the signal or idler is effectively balanced by the loss of the signal or idler at the respective exit plane to reach a steady-state oscillation. Because a cavity is eliminated, a BOPO or TPCOPO is more stable while a forward OPO is sensitive to the slight mirror translation. For a TPCOPO [4], there is an optimal pump power ≈3.4Pth (where Pth is the threshold, pump power) at which η reaches the maximum value of 44%. If P3≫Pth, there is a huge build-up of the oscillating fields inside the medium. The efficient sum-frequency generation saturates the TPCOPO. Consider GaAs/Al0.8Ga0.2 As multilayers [5] with the optimized structure dimensions: if λ3≈0.49μm, Pth≈7.3kW and tuning range: 1.4-2.6 μm (or 3.1-5.8 μm if λ3≈2μm). Consider ZnSe/ZnS multilayers: if λ3 ≈ 0.49 μm, Pth≈0.92kW and the tuning range: 0.7-1.7 μm, Consider GaAs/AlAs asymmetric coupled quantum-well domain structure [6]: if λ3 = 10 μm, Pth ≈ 10W and the tuning range: 15-29 μm. Consider a nondegenerate BOPO: |k1 − k2| ≫ 1/L, where k1,2 are the corresponding wave vectors and L is the length of the medium. If P3≈1.1 Pth, the conversion efficiency for the BOPO is η ≈ 20%. When P3 ≈ 3.4Pth, η ≈ 44% for the TPCOPO and η ≈ 95% for the BOPO. Consider a degenerate BOPO: λ1=λ2. A mirror for the pump wave with the reflectivity R2ω is attached to the right facet to increase the conversion efficiencies, However, it is not required for the oscillation to occur. When the pump intensity is Ip≈4I′th≈Ith/4, where Ith and I′th are the thresholds for a nearly-degenerate and degenerate BOPO, η ≈ 99.7% if R2ω=99%. Therefore, compared with the nondegenerate BOPO, the degenerate BOPO offers higher conversion efficiencies. The decrease of the conversion efficiency as Ip (>4I′th) increases is due to generation of a backward wave at the pump wavelength, which propagates along the direction opposite to that of the pump wave. Consider a poled LiNbO3 [1], If the spatia
{"title":"Novel configurations for optical parametric oscillators without any cavity","authors":"Yujie J. Ding, J. Khurgin, Seungjoon Lee","doi":"10.1364/qo.1997.qfd.4","DOIUrl":"https://doi.org/10.1364/qo.1997.qfd.4","url":null,"abstract":"Forward optical parametric oscillators (OPO’s) based on quasi-phase matching (QPM) were implemented in LiNbO3 [1], However, a forward OPO requires a cavity to establish oscillation. Harris [2] introduced the concept of a backward OPO (BOPO) based on conventional phase matching: a cavity is not required to establish oscillation. However, in Ref. [2], only a threshold condition was obtained. Here, we present our results on BOPO’s [3] and transversely-pumped counter-propagating OPO’s (TPCOPO’s) [4]. A TPCOPO does not require a cavity to establish oscillation either. Second-order susceptibility of a nonlinear medium is spatially modulated with a period the pump wavelength in the medium to achieve QPM. A pump wave at the wavelength in vacuum λ3 propagates along a waveguide for a BOPO or onto the surface for a TPCOPO. Two counter-propagating waves at the wavelengths λ1 and λ2 can be generated in the nonlinear medium. To tune the output frequencies of the signal and idler, we can change the incident angle of the pump wave in the TPCOPO or BOPO. The gain for the signal or idler is effectively balanced by the loss of the signal or idler at the respective exit plane to reach a steady-state oscillation. Because a cavity is eliminated, a BOPO or TPCOPO is more stable while a forward OPO is sensitive to the slight mirror translation. For a TPCOPO [4], there is an optimal pump power ≈3.4Pth (where Pth is the threshold, pump power) at which η reaches the maximum value of 44%. If P3≫Pth, there is a huge build-up of the oscillating fields inside the medium. The efficient sum-frequency generation saturates the TPCOPO. Consider GaAs/Al0.8Ga0.2 As multilayers [5] with the optimized structure dimensions: if λ3≈0.49μm, Pth≈7.3kW and tuning range: 1.4-2.6 μm (or 3.1-5.8 μm if λ3≈2μm). Consider ZnSe/ZnS multilayers: if λ3 ≈ 0.49 μm, Pth≈0.92kW and the tuning range: 0.7-1.7 μm, Consider GaAs/AlAs asymmetric coupled quantum-well domain structure [6]: if λ3 = 10 μm, Pth ≈ 10W and the tuning range: 15-29 μm. Consider a nondegenerate BOPO: |k1 − k2| ≫ 1/L, where k1,2 are the corresponding wave vectors and L is the length of the medium. If P3≈1.1 Pth, the conversion efficiency for the BOPO is η ≈ 20%. When P3 ≈ 3.4Pth, η ≈ 44% for the TPCOPO and η ≈ 95% for the BOPO. Consider a degenerate BOPO: λ1=λ2. A mirror for the pump wave with the reflectivity R2ω is attached to the right facet to increase the conversion efficiencies, However, it is not required for the oscillation to occur. When the pump intensity is Ip≈4I′th≈Ith/4, where Ith and I′th are the thresholds for a nearly-degenerate and degenerate BOPO, η ≈ 99.7% if R2ω=99%. Therefore, compared with the nondegenerate BOPO, the degenerate BOPO offers higher conversion efficiencies. The decrease of the conversion efficiency as Ip (>4I′th) increases is due to generation of a backward wave at the pump wavelength, which propagates along the direction opposite to that of the pump wave. Consider a poled LiNbO3 [1], If the spatia","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"38 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90588077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recently, low-dimensional quantum structures such as quantum dots (QDs) and quantum wires (QWIs), has been attracting much interest due to their novel physical properties and consequent improvements in device performances.1) When the ideal QD or QWI structures are achieved, higher gain and lower threshold current in laser diodes are expected.2) Among the many fabrication methods reported for such structures, self-assembled quantum-dot (SAQD) growth techniques3-5) are particularly notable. They positively utilize the islanding growth in highly strained heteroepitaxial systems, such as InGaAs on GaAs. The SAQDs can be simply fabricated by molecular beam epitaxy (MBE)3) or metal-organic vapor phase epitaxy (MOVPE)4),5) and they have high crystal quality and uniform size distributions of within 10% as well as high surface densities of more than about 1011cm-2. Using these SAQDs, low-threshold QD edge-emitting lasers have been fabricated.6-8) We expect to make even more advanced lasers, such as QD vertical-cavity surface-emitting lasers (VCSELs) using QDs in the active region.9) The QD-VCSEL is especially attractive for controlling both the electron and photon modes in a microcavity structure.10) When the cavity mode coincides with the narrow bandwidth light emission that originates from the delta-function-like density of states in uniform QDs, a high-performance light source with very low threshold current can be realized. On the other hand, the gain width, which critically determines the temperature characteristics of the VCSEL,11) can be designated in QD-VCSELs by controlling the dot size distribution. Therefore, for improving and modifying device performances, we believe that the QD-VCSEL is the optimum optical device utilizing the QD structure. In this article, we report the fabrication of a QD-VCSEL and the observation of lasing oscillation at room temperature.
{"title":"Vertical cavity surface emitting laser with self-assembled quantum dots","authors":"K. Nishi, H. Saito, S. Sugou","doi":"10.1364/qo.1997.qwa.2","DOIUrl":"https://doi.org/10.1364/qo.1997.qwa.2","url":null,"abstract":"Recently, low-dimensional quantum structures such as quantum dots (QDs) and quantum wires (QWIs), has been attracting much interest due to their novel physical properties and consequent improvements in device performances.1) When the ideal QD or QWI structures are achieved, higher gain and lower threshold current in laser diodes are expected.2) Among the many fabrication methods reported for such structures, self-assembled quantum-dot (SAQD) growth techniques3-5) are particularly notable. They positively utilize the islanding growth in highly strained heteroepitaxial systems, such as InGaAs on GaAs. The SAQDs can be simply fabricated by molecular beam epitaxy (MBE)3) or metal-organic vapor phase epitaxy (MOVPE)4),5) and they have high crystal quality and uniform size distributions of within 10% as well as high surface densities of more than about 1011cm-2. Using these SAQDs, low-threshold QD edge-emitting lasers have been fabricated.6-8) We expect to make even more advanced lasers, such as QD vertical-cavity surface-emitting lasers (VCSELs) using QDs in the active region.9) The QD-VCSEL is especially attractive for controlling both the electron and photon modes in a microcavity structure.10) When the cavity mode coincides with the narrow bandwidth light emission that originates from the delta-function-like density of states in uniform QDs, a high-performance light source with very low threshold current can be realized. On the other hand, the gain width, which critically determines the temperature characteristics of the VCSEL,11) can be designated in QD-VCSELs by controlling the dot size distribution. Therefore, for improving and modifying device performances, we believe that the QD-VCSEL is the optimum optical device utilizing the QD structure. In this article, we report the fabrication of a QD-VCSEL and the observation of lasing oscillation at room temperature.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"117 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88470218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. A. Smith, S. Risbud, J. Cooke, Howard W. H. Lee
Our study of ZnSe quantum dots is motivated by the inherent interest in quantum confined systems and by the potential for shorter wavelength laser operation enabled by blue-shifted quantum confined energy levels. The optical and electronic properties of these nanocrystals as a function of the fabrication process were investigated with various optical techniques including photoluminescence (PL) lifetimes, and absorption, PL , and excitation spectroscopy.
{"title":"Laser Annealing of Trap States in ZnSe Quantum Dots","authors":"C. A. Smith, S. Risbud, J. Cooke, Howard W. H. Lee","doi":"10.1364/qo.1997.qthe.10","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.10","url":null,"abstract":"Our study of ZnSe quantum dots is motivated by the inherent interest in quantum confined systems and by the potential for shorter wavelength laser operation enabled by blue-shifted quantum confined energy levels. The optical and electronic properties of these nanocrystals as a function of the fabrication process were investigated with various optical techniques including photoluminescence (PL) lifetimes, and absorption, PL , and excitation spectroscopy.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88591061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Gmachl, J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. Cho
Low threshold, single-mode quantum cascade whispering gallery lasers with emission wavelengths from 5.0 to 11.5 micrometer are reported. Their potential for true microcavities is discussed.
{"title":"Quantum Cascade Whispering Gallery Lasers","authors":"C. Gmachl, J. Faist, F. Capasso, C. Sirtori, D. Sivco, A. Cho","doi":"10.1364/qo.1997.qfa.1","DOIUrl":"https://doi.org/10.1364/qo.1997.qfa.1","url":null,"abstract":"Low threshold, single-mode quantum cascade whispering gallery lasers with emission wavelengths from 5.0 to 11.5 micrometer are reported. Their potential for true microcavities is discussed.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"3 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83085726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There has been increasing fundamental and practical interest in the properties of dielectric microspheres in recent years. High-Q structural resonances that occur when the round trip optical path is an integral number of wavelengths can be exploited for quantum measurement and the observation of cavity QED effects. The spherical microparticle is also an important component of the earth’s atmosphere, contributing both to visual displays and global change. In this paper, we describe theoretical and experimental applications of optical pulse techniques to the characterization of dielectric spheres.
{"title":"Time-Domain Measurements of Light Propagation in Dielectric Spheres","authors":"W. Whitten, R. Shaw, M. Barnes, J. Ramsey","doi":"10.1364/qo.1997.qthe.8","DOIUrl":"https://doi.org/10.1364/qo.1997.qthe.8","url":null,"abstract":"There has been increasing fundamental and practical interest in the properties of dielectric microspheres in recent years. High-Q structural resonances that occur when the round trip optical path is an integral number of wavelengths can be exploited for quantum measurement and the observation of cavity QED effects. The spherical microparticle is also an important component of the earth’s atmosphere, contributing both to visual displays and global change. In this paper, we describe theoretical and experimental applications of optical pulse techniques to the characterization of dielectric spheres.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"14 1","pages":""},"PeriodicalIF":0.9,"publicationDate":"1997-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81956338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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