Pub Date : 2023-10-01DOI: 10.1109/MNANO.2023.3297117
Chang Peng, Huaiyu Wu, Xiaoning Jiang
Ultrasound transducer is a core component for transductions between acoustic energy and electrical energy in numerous applications including medical imaging, therapy, human health monitoring and non-destructive testing (NDT). The rapid advancement of nanotechnology in recent years has opened up new prospects for ultrasound transducers. The integration of nanomaterials and nanofabrication techniques with ultrasound transducers offers ample opportunities for enhancing transducer performances and opening up new applications. The objective of this review is to provide the state-of-the-art advancement of nanotechnology-enabled ultrasound transducers, with a focus on nanomaterials applied in both piezoelectric transducers and optoacoustic transducers, as well as fabrication techniques of nanostructured materials for ultrasound transducers. Firstly, nanomaterials and nanofabrication techniques for both piezoelectric transducers and optoacoustic transducers are reviewed and summarized. Representative nanotechnology-enabled ultrasound transducers for biomedical and NDT applications are then examined. Finally, a discussion of major challenges and future research directions of nanotechnology-enabled ultrasound transducers are presented.
{"title":"Nanotechnology-Enabled Ultrasound Transducers","authors":"Chang Peng, Huaiyu Wu, Xiaoning Jiang","doi":"10.1109/MNANO.2023.3297117","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3297117","url":null,"abstract":"Ultrasound transducer is a core component for transductions between acoustic energy and electrical energy in numerous applications including medical imaging, therapy, human health monitoring and non-destructive testing (NDT). The rapid advancement of nanotechnology in recent years has opened up new prospects for ultrasound transducers. The integration of nanomaterials and nanofabrication techniques with ultrasound transducers offers ample opportunities for enhancing transducer performances and opening up new applications. The objective of this review is to provide the state-of-the-art advancement of nanotechnology-enabled ultrasound transducers, with a focus on nanomaterials applied in both piezoelectric transducers and optoacoustic transducers, as well as fabrication techniques of nanostructured materials for ultrasound transducers. Firstly, nanomaterials and nanofabrication techniques for both piezoelectric transducers and optoacoustic transducers are reviewed and summarized. Representative nanotechnology-enabled ultrasound transducers for biomedical and NDT applications are then examined. Finally, a discussion of major challenges and future research directions of nanotechnology-enabled ultrasound transducers are presented.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"4-12"},"PeriodicalIF":1.6,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47161604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1109/MNANO.2023.3297104
K. Kurabayashi, Younggeun Park
Nanoplasmonic biosensors are highly advantageous for their label-free, robust, rapid, cost-effective, and easy-to-integrate features, making them capable of real-time detection of surface-bound analyte biomolecules. This is accomplished through a shift in photon absorbing and scattering behaviors of localized surface plasmons, which are collective oscillations of conduction-band electrons highly localized on the surfaces of metallic nanostructures. These properties make nanoplasmonic biosensors promising candidates for point-of-care testing (POCT) of diseases. However, these sensors often fall short of simultaneously achieving the speed, sensitivity, and system miniaturization required for critical care medicine. In the intensive care unit (ICU), clinicians need to quickly diagnose and intervene in life-threatening illnesses. To address this issue, the authors of this “perspective” paper presents recent advancements in their integrated nanoplasmonic biosensor technologies. Their research shows that assays integrating nanoplasmonic materials with two-dimensional (2D) nanoscale multilayer transition metal dichalcogenide (TMDC) photoconductive channels offer promising POC platforms with rapid, sensitive, selective, user-friendly on-chip biosensing capabilities.
{"title":"Integrated Nanoplasmonic Biosensors Recent Progress for Critical Care Medicine Applications","authors":"K. Kurabayashi, Younggeun Park","doi":"10.1109/MNANO.2023.3297104","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3297104","url":null,"abstract":"Nanoplasmonic biosensors are highly advantageous for their label-free, robust, rapid, cost-effective, and easy-to-integrate features, making them capable of real-time detection of surface-bound analyte biomolecules. This is accomplished through a shift in photon absorbing and scattering behaviors of localized surface plasmons, which are collective oscillations of conduction-band electrons highly localized on the surfaces of metallic nanostructures. These properties make nanoplasmonic biosensors promising candidates for point-of-care testing (POCT) of diseases. However, these sensors often fall short of simultaneously achieving the speed, sensitivity, and system miniaturization required for critical care medicine. In the intensive care unit (ICU), clinicians need to quickly diagnose and intervene in life-threatening illnesses. To address this issue, the authors of this “perspective” paper presents recent advancements in their integrated nanoplasmonic biosensor technologies. Their research shows that assays integrating nanoplasmonic materials with two-dimensional (2D) nanoscale multilayer transition metal dichalcogenide (TMDC) photoconductive channels offer promising POC platforms with rapid, sensitive, selective, user-friendly on-chip biosensing capabilities.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"13-23"},"PeriodicalIF":1.6,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43414114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-01DOI: 10.1109/mnano.2023.3318809
{"title":"We Want to Hear from You!","authors":"","doi":"10.1109/mnano.2023.3318809","DOIUrl":"https://doi.org/10.1109/mnano.2023.3318809","url":null,"abstract":"","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135452440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.1109/MNANO.2023.3278968
Youseung Lee, Jiang Cao, M. Luisier
Device simulation is nowadays fully integrated into the production tool chain of transistors. The geometry of the latter can be carefully optimized, possible design pitfalls can be identified early on, and the obtained experimental data can be analyzed in detail thanks to state-of-the-art technology computer aided design tools. However, on the one hand, the dimensions of transistors are reaching the atomic scale. On the other hand, novel functionalities (e.g., light emission/detection) and materials, for example III-V semiconductors, are being added to silicon-based chips. To cope with these challenges it is crucial that device simulators go beyond classical theories, pure electronic transport, and continuum models. The inclusion of quantum mechanical phenomena, electro-thermal effects, and light-matter interactions in systems made of thousands of atoms and of various materials has become critical. In this paper, we review one approach that satisfies all these requirements, the Non-equilibrium Green’s Function (NEGF) formalism, focusing on its combination with ab initio bandstructure models. The NEGF method allows to treat electrical, thermal, and optical transport at the quantum mechanical level in multi-material, multi-functional devices, without any empirical parameters. Besides advanced logic switches, it can be used to simulate e.g., photo-detectors, thermoelectric generators, or memory cells composed of almost any materials, in the ballistic limit of transport and in the presence of scattering. The key features of NEGF are summarized first, then selected applications are presented, finally challenges and opportunities are discussed.
{"title":"Atomistic Simulation of Nanoscale Devices","authors":"Youseung Lee, Jiang Cao, M. Luisier","doi":"10.1109/MNANO.2023.3278968","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3278968","url":null,"abstract":"Device simulation is nowadays fully integrated into the production tool chain of transistors. The geometry of the latter can be carefully optimized, possible design pitfalls can be identified early on, and the obtained experimental data can be analyzed in detail thanks to state-of-the-art technology computer aided design tools. However, on the one hand, the dimensions of transistors are reaching the atomic scale. On the other hand, novel functionalities (e.g., light emission/detection) and materials, for example III-V semiconductors, are being added to silicon-based chips. To cope with these challenges it is crucial that device simulators go beyond classical theories, pure electronic transport, and continuum models. The inclusion of quantum mechanical phenomena, electro-thermal effects, and light-matter interactions in systems made of thousands of atoms and of various materials has become critical. In this paper, we review one approach that satisfies all these requirements, the Non-equilibrium Green’s Function (NEGF) formalism, focusing on its combination with ab initio bandstructure models. The NEGF method allows to treat electrical, thermal, and optical transport at the quantum mechanical level in multi-material, multi-functional devices, without any empirical parameters. Besides advanced logic switches, it can be used to simulate e.g., photo-detectors, thermoelectric generators, or memory cells composed of almost any materials, in the ballistic limit of transport and in the presence of scattering. The key features of NEGF are summarized first, then selected applications are presented, finally challenges and opportunities are discussed.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"4-14"},"PeriodicalIF":1.6,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45551013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.1109/MNANO.2023.3278970
Revanth Koduru, Tanmoy Kumar Paul, S. Gupta
Ferroelectric devices have gained significant interest, owing to their diverse range of applications in fields such as non-volatile memories, steep-slope transistors, neuromorphic and in-memory computing. Accurate modeling of ferroelectric devices is crucial to optimize these devices for different applications and design high-performance circuits. This article presents an overview of the current state of ferroelectric modeling at material, device, and circuit levels. We examine the unique aspects and limitations of the current modeling techniques and highlight potential areas of further research to advance this field.
{"title":"Material, Device and Circuit-Compatible Modeling of Ferroelectric Devices","authors":"Revanth Koduru, Tanmoy Kumar Paul, S. Gupta","doi":"10.1109/MNANO.2023.3278970","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3278970","url":null,"abstract":"Ferroelectric devices have gained significant interest, owing to their diverse range of applications in fields such as non-volatile memories, steep-slope transistors, neuromorphic and in-memory computing. Accurate modeling of ferroelectric devices is crucial to optimize these devices for different applications and design high-performance circuits. This article presents an overview of the current state of ferroelectric modeling at material, device, and circuit levels. We examine the unique aspects and limitations of the current modeling techniques and highlight potential areas of further research to advance this field.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"26-36"},"PeriodicalIF":1.6,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48674071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.1109/mnano.2023.3279708
Bing Sheu, Shao-Ku Kao
Computer simulation has played an important role in developing advanced nanotechnology with great effectiveness and efficiency. Prof. Josef Weinbub and Dr. Roza Kotlyar at Modeling and Simulation Technical Committee of IEEE Nanotechnology Council serve as Guest Editors for the Special Issue with the theme: Simulation and Modeling of Nanotechnology.
{"title":"The Editors’ Desk [The Editors' Desk]","authors":"Bing Sheu, Shao-Ku Kao","doi":"10.1109/mnano.2023.3279708","DOIUrl":"https://doi.org/10.1109/mnano.2023.3279708","url":null,"abstract":"Computer simulation has played an important role in developing advanced nanotechnology with great effectiveness and efficiency. Prof. Josef Weinbub and Dr. Roza Kotlyar at Modeling and Simulation Technical Committee of IEEE Nanotechnology Council serve as Guest Editors for the Special Issue with the theme: Simulation and Modeling of Nanotechnology.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135872105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.1109/MNANO.2023.3278971
Dmitri E. Nikonov, Hai Li, I. Young
While the scaling of CMOS electronics continues and reaches the sub-10 nanometer range, active research is being conducted on logic devices beyond CMOS to find a path to a more energy efficient integrated circuit platform for computing. Among them, a prominent option is spintronic devices, remarkable for their non-volatility and low switching energy. Simulation is the key part of this research due to spintronics’ reliance on novel materials, device structures, and circuit architecture. We review recent publications which often traverse these hierarchical levels of the computing stack. Prevalent methods, comparison with experiments, use in proposing new logic concepts are surveyed.
{"title":"Review of Simulation Methods for Design of Spin Logic","authors":"Dmitri E. Nikonov, Hai Li, I. Young","doi":"10.1109/MNANO.2023.3278971","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3278971","url":null,"abstract":"While the scaling of CMOS electronics continues and reaches the sub-10 nanometer range, active research is being conducted on logic devices beyond CMOS to find a path to a more energy efficient integrated circuit platform for computing. Among them, a prominent option is spintronic devices, remarkable for their non-volatility and low switching energy. Simulation is the key part of this research due to spintronics’ reliance on novel materials, device structures, and circuit architecture. We review recent publications which often traverse these hierarchical levels of the computing stack. Prevalent methods, comparison with experiments, use in proposing new logic concepts are surveyed.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"37-42"},"PeriodicalIF":1.6,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47757811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-01DOI: 10.1109/MNANO.2023.3278969
T. Knobloch, Dominic Waldhoer, T. Grasser
Two-dimensional materials promise excellent gate control and high drive currents at the ultimate scaling limit. However, numerous challenges must be overcome before silicon can potentially be replaced as the predominant channel material. For example, defects in two-dimensional materials and their vicinity pose a considerable challenge, as they have a sizable impact on the performance of such ultra-scaled devices.For enabling the transition from single lab-based devices to highly-integrated structures at an industrial scale, predictive modeling tools are required for devices based on two-dimensional semiconductors. Moreover, models for transport in nanoelectronic devices need to be efficiently coupled to physical defect models. This article presents multi-scale models for transport and defect simulations, linking them wherever possible. Based on the latest insights, important research questions for future studies are identified.
{"title":"Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects","authors":"T. Knobloch, Dominic Waldhoer, T. Grasser","doi":"10.1109/MNANO.2023.3278969","DOIUrl":"https://doi.org/10.1109/MNANO.2023.3278969","url":null,"abstract":"Two-dimensional materials promise excellent gate control and high drive currents at the ultimate scaling limit. However, numerous challenges must be overcome before silicon can potentially be replaced as the predominant channel material. For example, defects in two-dimensional materials and their vicinity pose a considerable challenge, as they have a sizable impact on the performance of such ultra-scaled devices.For enabling the transition from single lab-based devices to highly-integrated structures at an industrial scale, predictive modeling tools are required for devices based on two-dimensional semiconductors. Moreover, models for transport in nanoelectronic devices need to be efficiently coupled to physical defect models. This article presents multi-scale models for transport and defect simulations, linking them wherever possible. Based on the latest insights, important research questions for future studies are identified.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"15-25"},"PeriodicalIF":1.6,"publicationDate":"2023-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47525439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-01Epub Date: 2023-04-13DOI: 10.1109/mnano.2023.3262099
Sasitharan Balasubramaniam, Samitha Somathilaka, Sehee Sun, Adrian Ratwatte, Massimiliano Pierobon
Artificial Intelligence (AI) and Machine Learning (ML) are weaving their way into the fabric of society, where they are playing a crucial role in numerous facets of our lives. As we witness the increased deployment of AI and ML in various types of devices, we benefit from their use into energy-efficient algorithms for low powered devices. In this paper, we investigate a scale and medium that is far smaller than conventional devices as we move towards molecular systems that can be utilized to perform machine learning functions, i.e., Molecular Machine Learning (MML). Fundamental to the operation of MML is the transport, processing, and interpretation of information propagated by molecules through chemical reactions. We begin by reviewing the current approaches that have been developed for MML, before we move towards potential new directions that rely on gene regulatory networks inside biological organisms as well as their population interactions to create neural networks. We then investigate mechanisms for training machine learning structures in biological cells based on calcium signaling and demonstrate their application to build an Analog to Digital Converter (ADC). Lastly, we look at potential future directions as well as challenges that this area could solve.
{"title":"Realizing Molecular Machine Learning through Communications for Biological AI: Future Directions and Challenges.","authors":"Sasitharan Balasubramaniam, Samitha Somathilaka, Sehee Sun, Adrian Ratwatte, Massimiliano Pierobon","doi":"10.1109/mnano.2023.3262099","DOIUrl":"10.1109/mnano.2023.3262099","url":null,"abstract":"<p><p>Artificial Intelligence (AI) and Machine Learning (ML) are weaving their way into the fabric of society, where they are playing a crucial role in numerous facets of our lives. As we witness the increased deployment of AI and ML in various types of devices, we benefit from their use into energy-efficient algorithms for low powered devices. In this paper, we investigate a scale and medium that is far smaller than conventional devices as we move towards molecular systems that can be utilized to perform machine learning functions, i.e., Molecular Machine Learning (MML). Fundamental to the operation of MML is the transport, processing, and interpretation of information propagated by molecules through chemical reactions. We begin by reviewing the current approaches that have been developed for MML, before we move towards potential new directions that rely on gene regulatory networks inside biological organisms as well as their population interactions to create neural networks. We then investigate mechanisms for training machine learning structures in biological cells based on calcium signaling and demonstrate their application to build an Analog to Digital Converter (ADC). Lastly, we look at potential future directions as well as challenges that this area could solve.</p>","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"17 1","pages":"10-20"},"PeriodicalIF":1.6,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11160936/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43943709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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