Pub Date : 2022-10-01DOI: 10.1109/MNANO.2022.3195107
B. Prabowo, A. Purwidyantri
The pandemic of coronavirus diseases 2019 (COVID-19) attracts dramatic attention worldwide that biosensing technology plays an essential role in screening, tracing, and diagnostics of the diseases in society. The World Health Organization (WHO) recommends the significant features of biosensor development, called ASSURED: affordable, sensitive, specific, user-friendly, rapid and robust, equipment-free, and delivered to the end-user. Consequently, the practical, low-cost, and environmentally friendly components of biosensors are urgently required in the future for such cases of massive tests in homecare and point of care. This article reviews the emerging trend and applications of recent biosensor research utilizing reusable and biodegradable components. The challenges of future development were discussed to overview the consideration of the subsequent research roadmap.
{"title":"Environmentally Friendly and Biodegradable Components for Biosensors","authors":"B. Prabowo, A. Purwidyantri","doi":"10.1109/MNANO.2022.3195107","DOIUrl":"https://doi.org/10.1109/MNANO.2022.3195107","url":null,"abstract":"The pandemic of coronavirus diseases 2019 (COVID-19) attracts dramatic attention worldwide that biosensing technology plays an essential role in screening, tracing, and diagnostics of the diseases in society. The World Health Organization (WHO) recommends the significant features of biosensor development, called ASSURED: affordable, sensitive, specific, user-friendly, rapid and robust, equipment-free, and delivered to the end-user. Consequently, the practical, low-cost, and environmentally friendly components of biosensors are urgently required in the future for such cases of massive tests in homecare and point of care. This article reviews the emerging trend and applications of recent biosensor research utilizing reusable and biodegradable components. The challenges of future development were discussed to overview the consideration of the subsequent research roadmap.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"13-19"},"PeriodicalIF":1.6,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45593631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-01DOI: 10.1109/mnano.2022.3195077
M. B. Lodi, Santhosh Sivasubramani, J. Berkenbrock, D. Vieira, Tory A. Welsch, Yi Li, R. Sliz
To shape the next generation of nanotechnologists and nanoscientists, especially during and post the Covid-19 pandemic, the teaching and learning paradigms for nanotechnology must change. To this aim, innovative solutions driven by digital tools and new inclusive initiatives have to be proposed. This work reports the experience of the first edition of the World Nanotechnology Marathon organized by the IEEE Nanotechnology Council Young Professionals. Throughout 24 hours, 24 nanotechnology experts inspired the new generation of nanotechnologists as well as experienced professionals in this area, paving the route to a sustainable and active network of nanotechnology young professionals around the world.
{"title":"The First Edition of the World Nanotechnology Marathon","authors":"M. B. Lodi, Santhosh Sivasubramani, J. Berkenbrock, D. Vieira, Tory A. Welsch, Yi Li, R. Sliz","doi":"10.1109/mnano.2022.3195077","DOIUrl":"https://doi.org/10.1109/mnano.2022.3195077","url":null,"abstract":"To shape the next generation of nanotechnologists and nanoscientists, especially during and post the Covid-19 pandemic, the teaching and learning paradigms for nanotechnology must change. To this aim, innovative solutions driven by digital tools and new inclusive initiatives have to be proposed. This work reports the experience of the first edition of the World Nanotechnology Marathon organized by the IEEE Nanotechnology Council Young Professionals. Throughout 24 hours, 24 nanotechnology experts inspired the new generation of nanotechnologists as well as experienced professionals in this area, paving the route to a sustainable and active network of nanotechnology young professionals around the world.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":" ","pages":""},"PeriodicalIF":1.6,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43646295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-01DOI: 10.1109/mnano.2022.3194994
Bing J. Sheu, Shao-Ku Kao, Xiaoning Jiang, Chao-Sung Lai, H. Yang, Vita Pi-Ho Hu, Hsiao-Chun Huang, Huan Liu, I. Yun, T. Sakata, M. Ottavi, P. Dimitrakis, G. Sirakoulis, M. R. Elara, L. Lin, Yang Xu, V. Puliafito, A. Bonyár, Yuh-Shyan Hwang, Ruey-Dar Chang
{"title":"Introducing the Editorial Board","authors":"Bing J. Sheu, Shao-Ku Kao, Xiaoning Jiang, Chao-Sung Lai, H. Yang, Vita Pi-Ho Hu, Hsiao-Chun Huang, Huan Liu, I. Yun, T. Sakata, M. Ottavi, P. Dimitrakis, G. Sirakoulis, M. R. Elara, L. Lin, Yang Xu, V. Puliafito, A. Bonyár, Yuh-Shyan Hwang, Ruey-Dar Chang","doi":"10.1109/mnano.2022.3194994","DOIUrl":"https://doi.org/10.1109/mnano.2022.3194994","url":null,"abstract":"","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":" ","pages":""},"PeriodicalIF":1.6,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45288785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-01DOI: 10.1109/MNANO.2022.3195102
A. Purwidyantri, B. Prabowo
Nanosphere lithography (NSL), a colloidal-based nanopatterning technique, has demonstrated versatility for bottom-up and top-down nanofabrication approaches with a simple procedure that can be performed in a standard chemical laboratory. This technique offers versatility for large-area nanopatterning with a low-cost process. Nanopatterned arrays have shown outstanding features in enhancing sensor performance due to their ability to create effective nanoscale physical and chemical changes, high molecular entrapment with the roughened substrate, and means of downscaling toward scalable sensors manufacturing. All these prominent properties have made NSL a promising candidate for scalable biosensors production as its performance is also highly comparable with the pre-existing lithography techniques that mostly require high-cost infrastructure. This mini-review discusses in detail the advantages of colloidal lithography over other lithography techniques from the resolution and scalability of manufacturing. It is emphasized that the cost-competitive NSL technology may be applicable for a broad range of end-users, from high-profit margins, such as communication, technology, and health sectors, to the low-profit margins, such as in food industries. The combinational strategies in NSL are presented, including polystyrene nanotemplating of the substrate, feasible integration with metallic film deposition technologies, and potential application in various sensing platforms.
{"title":"The Prospects of Colloidal Lithography Towards Low-Cost and Scalable Sensors","authors":"A. Purwidyantri, B. Prabowo","doi":"10.1109/MNANO.2022.3195102","DOIUrl":"https://doi.org/10.1109/MNANO.2022.3195102","url":null,"abstract":"Nanosphere lithography (NSL), a colloidal-based nanopatterning technique, has demonstrated versatility for bottom-up and top-down nanofabrication approaches with a simple procedure that can be performed in a standard chemical laboratory. This technique offers versatility for large-area nanopatterning with a low-cost process. Nanopatterned arrays have shown outstanding features in enhancing sensor performance due to their ability to create effective nanoscale physical and chemical changes, high molecular entrapment with the roughened substrate, and means of downscaling toward scalable sensors manufacturing. All these prominent properties have made NSL a promising candidate for scalable biosensors production as its performance is also highly comparable with the pre-existing lithography techniques that mostly require high-cost infrastructure. This mini-review discusses in detail the advantages of colloidal lithography over other lithography techniques from the resolution and scalability of manufacturing. It is emphasized that the cost-competitive NSL technology may be applicable for a broad range of end-users, from high-profit margins, such as communication, technology, and health sectors, to the low-profit margins, such as in food industries. The combinational strategies in NSL are presented, including polystyrene nanotemplating of the substrate, feasible integration with metallic film deposition technologies, and potential application in various sensing platforms.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"20-28"},"PeriodicalIF":1.6,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43708429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-01DOI: 10.1109/MNANO.2022.3195131
Seema Dhull, Arshid Nisar, Namita Bindal, B. Kaushik
This article explores the recent developments in spin-based domain wall (DW) memories. The physics behind the DW motion, device materials, current challenges, and applications have been discussed in detail. DWs can propagate through a magnetic nanowire by the application of external magnetic fields or by spin-polarized electric currents. Great progress has been made in these devices since the introduction of electric current-induced DW motion. However, driving DWs necessitates large spin-current densities that are incompatible with low-power devices. Therefore, significant efforts have been made to achieve highly efficient and controlled DW motion by material engineering and different mechanisms such as spin-orbit-torque (SOT), Dzyaloshinskii-Moriya interaction (DMI), and voltage-controlled magnetic anisotropy. The controlled manipulation of DWs in magnetic materials has inspired numerous strategies for high-density memory and energy-efficient logic implementation. Moreover, these devices are the potential candidates for neuromorphic computing applications that can be combined with logic-in-memory. The displacement of the DW can achieve multiple resistance states that have opened up possibilities of building artificial neurons and synapses. Despite the rapid progress, DW devices face several challenges such as low read margin, low speed, and sub-20nm scalability. Future research directions have to focus on material engineering and fabrication techniques to address these issues. Simultaneously, efforts from the circuit and system perspectives are extensively required in exploring the possible uses of these devices.
{"title":"Advances in Magnetic Domain Walls and Their Applications","authors":"Seema Dhull, Arshid Nisar, Namita Bindal, B. Kaushik","doi":"10.1109/MNANO.2022.3195131","DOIUrl":"https://doi.org/10.1109/MNANO.2022.3195131","url":null,"abstract":"This article explores the recent developments in spin-based domain wall (DW) memories. The physics behind the DW motion, device materials, current challenges, and applications have been discussed in detail. DWs can propagate through a magnetic nanowire by the application of external magnetic fields or by spin-polarized electric currents. Great progress has been made in these devices since the introduction of electric current-induced DW motion. However, driving DWs necessitates large spin-current densities that are incompatible with low-power devices. Therefore, significant efforts have been made to achieve highly efficient and controlled DW motion by material engineering and different mechanisms such as spin-orbit-torque (SOT), Dzyaloshinskii-Moriya interaction (DMI), and voltage-controlled magnetic anisotropy. The controlled manipulation of DWs in magnetic materials has inspired numerous strategies for high-density memory and energy-efficient logic implementation. Moreover, these devices are the potential candidates for neuromorphic computing applications that can be combined with logic-in-memory. The displacement of the DW can achieve multiple resistance states that have opened up possibilities of building artificial neurons and synapses. Despite the rapid progress, DW devices face several challenges such as low read margin, low speed, and sub-20nm scalability. Future research directions have to focus on material engineering and fabrication techniques to address these issues. Simultaneously, efforts from the circuit and system perspectives are extensively required in exploring the possible uses of these devices.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"29-44"},"PeriodicalIF":1.6,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42141926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/mnano.2022.3175405
Yai-Chi Liu, Yi‐Chung Dzeng, Chao-Cheng Ting
Quantum computing has gained enormous attention from both academia and industry for its capability in handling problems that challenge the limit of classical computation. It is expected to shine in areas such as artificial intelligence, financial technology, drug development, and chemical reaction modeling. The quantum bit, or qubit, is the essential unit of quantum computers (QCs), and there are different types of implementations of the qubit, such as superconductor-based qubits, trapped ion qubits, quantum dot qubits, photonic qubits, topological qubits, and nitrogen vacancy (NV) diamond qubits, which are known to be able to function at room temperature with high longevity. In this article, NV-centered diamond fabrication, qubit structure, bit control, entanglement, and decoherence, as well as the pros and cons, are briefly introduced. At the end, the status of the commercialization of NV diamond QCs and the benchmark of different types of qubits are summarized.
{"title":"Nitrogen Vacancy-Centered Diamond Qubit: The fabrication, design, and application in quantum computing","authors":"Yai-Chi Liu, Yi‐Chung Dzeng, Chao-Cheng Ting","doi":"10.1109/mnano.2022.3175405","DOIUrl":"https://doi.org/10.1109/mnano.2022.3175405","url":null,"abstract":"Quantum computing has gained enormous attention from both academia and industry for its capability in handling problems that challenge the limit of classical computation. It is expected to shine in areas such as artificial intelligence, financial technology, drug development, and chemical reaction modeling. The quantum bit, or qubit, is the essential unit of quantum computers (QCs), and there are different types of implementations of the qubit, such as superconductor-based qubits, trapped ion qubits, quantum dot qubits, photonic qubits, topological qubits, and nitrogen vacancy (NV) diamond qubits, which are known to be able to function at room temperature with high longevity. In this article, NV-centered diamond fabrication, qubit structure, bit control, entanglement, and decoherence, as well as the pros and cons, are briefly introduced. At the end, the status of the commercialization of NV diamond QCs and the benchmark of different types of qubits are summarized.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"37-43"},"PeriodicalIF":1.6,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43542183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-01DOI: 10.1109/mnano.2022.3175394
Z. Jia, Yanjia Fu, Zhen Cao, Wanqing Cheng, Yongjie Zhao, Menghan Dou, P. Duan, Wei-cheng Kong, Gang Cao, Haiou Li, G. Guo
Quantum computers are based on the theory of quantum mechanics, and their powerful parallel data processing capability is expected to solve many mathematical problems that too are difficult to be handled by classical computers. Especially with the increase of data processing volume, the quantum advantage is more obvious. Among the many physical systems for quantum computers, superconducting quantum circuit and semiconductor quantum dot computers show amazing potential due to their compatibility with traditional integrated circuit process technology and ultrashort gating time of nanoseconds. Superconducting qubits consisting of Josephson junctions and superconducting coplanar capacitors are easily integrated into a large scale for their simple circuit structure and conventional semiconductor process compatibility. Semiconductor qubits made from isotopically purified silicon (Si)-based materials greatly suppress nuclear spin noise, and decoherence times of ultralong milliseconds can be achieved. In this article, we systematically describe the challenges faced by superconducting qubits and semiconductor qubits in hot issues such as error correction and decoherence and look into the future development of superconducting quantum computers and Si-based semiconductor quantum computers.
{"title":"Superconducting and Silicon-Based Semiconductor Quantum Computers: A review","authors":"Z. Jia, Yanjia Fu, Zhen Cao, Wanqing Cheng, Yongjie Zhao, Menghan Dou, P. Duan, Wei-cheng Kong, Gang Cao, Haiou Li, G. Guo","doi":"10.1109/mnano.2022.3175394","DOIUrl":"https://doi.org/10.1109/mnano.2022.3175394","url":null,"abstract":"Quantum computers are based on the theory of quantum mechanics, and their powerful parallel data processing capability is expected to solve many mathematical problems that too are difficult to be handled by classical computers. Especially with the increase of data processing volume, the quantum advantage is more obvious. Among the many physical systems for quantum computers, superconducting quantum circuit and semiconductor quantum dot computers show amazing potential due to their compatibility with traditional integrated circuit process technology and ultrashort gating time of nanoseconds. Superconducting qubits consisting of Josephson junctions and superconducting coplanar capacitors are easily integrated into a large scale for their simple circuit structure and conventional semiconductor process compatibility. Semiconductor qubits made from isotopically purified silicon (Si)-based materials greatly suppress nuclear spin noise, and decoherence times of ultralong milliseconds can be achieved. In this article, we systematically describe the challenges faced by superconducting qubits and semiconductor qubits in hot issues such as error correction and decoherence and look into the future development of superconducting quantum computers and Si-based semiconductor quantum computers.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"10-19"},"PeriodicalIF":1.6,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42681573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An array of trapped atomic ions that are laser cooled and isolated in an ultrahigh-vacuum environment presents one of the most advanced physical platforms for realizing a practical quantum computer. Small-scale ion quantum computers up to tens of ions have been built and achieved the highest fidelities on elementary quantum operations and overall quantum volume (QV). This article provides an overview of the elements of trapped-ion quantum computing (TIQC), current achievements in the field, and future perspectives.
{"title":"Quantum Computing With Trapped Ions: An overview","authors":"Wen-Han Png, Ting Hsu, Tze-Wei Liu, Guin-Dar Lin, Ming-Shien Chang","doi":"10.1109/mnano.2022.3175384","DOIUrl":"https://doi.org/10.1109/mnano.2022.3175384","url":null,"abstract":"An array of trapped atomic ions that are laser cooled and isolated in an ultrahigh-vacuum environment presents one of the most advanced physical platforms for realizing a practical quantum computer. Small-scale ion quantum computers up to tens of ions have been built and achieved the highest fidelities on elementary quantum operations and overall quantum volume (QV). This article provides an overview of the elements of trapped-ion quantum computing (TIQC), current achievements in the field, and future perspectives.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"30-36"},"PeriodicalIF":1.6,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44429545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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