It has been demonstrated that the photonic quantum computer is significantly faster than conventional supercomputers and that the practical quantum computer is one of the most promising ways to solve real-life problems. In this article, the development of photonic quantum computers and their potential applications are summarized, and three types of photonic quantum computing machines are detailed, including photonic quantum machines, coherent Ising machines (CIMs), and programmable photonic quantum computers. The photonic quantum industry, together with some start-up companies in associated application fields, are profiled. Compared with superconducting and ion traps, photonic quantum computing has its own advantages and disadvantages. It will be seen whether photonic quantum computer companies can capture a share of the future quantum computing market. The major challenges lie in the scalability of photonic systems and their adaptation and integration with silicon (Si) systems.
{"title":"Photonic Quantum Computers Enlighten the World: A review of their development, types, and applications","authors":"Yen-Hung Chen, Chein-Hung Cho, Wei Yuan, Yin Ma, K. Wen, Ching-Ray Chang","doi":"10.1109/mnano.2022.3175382","DOIUrl":"https://doi.org/10.1109/mnano.2022.3175382","url":null,"abstract":"It has been demonstrated that the photonic quantum computer is significantly faster than conventional supercomputers and that the practical quantum computer is one of the most promising ways to solve real-life problems. In this article, the development of photonic quantum computers and their potential applications are summarized, and three types of photonic quantum computing machines are detailed, including photonic quantum machines, coherent Ising machines (CIMs), and programmable photonic quantum computers. The photonic quantum industry, together with some start-up companies in associated application fields, are profiled. Compared with superconducting and ion traps, photonic quantum computing has its own advantages and disadvantages. It will be seen whether photonic quantum computer companies can capture a share of the future quantum computing market. The major challenges lie in the scalability of photonic systems and their adaptation and integration with silicon (Si) systems.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"4-9"},"PeriodicalIF":1.6,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43666725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/mnano.2022.3160770
B. Razavi
The power consumption of broadband circuits used in wireline systems becomes increasingly more critical as higher speeds are sought. This article presents a number of design techniques that greatly relax the tradeoffs between the speed and power consumption of functions such as multiplexers (MUXs), frequency dividers, and equalizers. Examples include quadrature multiplexing, charge steering, and feedforward techniques. The concepts have been demonstrated in CMOS transceivers up to 56 GHz.
{"title":"Breaking the Speed-Power Tradeoffs in Broadband Circuits: Reviewing design techniques for transceivers up to 56 GHz","authors":"B. Razavi","doi":"10.1109/mnano.2022.3160770","DOIUrl":"https://doi.org/10.1109/mnano.2022.3160770","url":null,"abstract":"The power consumption of broadband circuits used in wireline systems becomes increasingly more critical as higher speeds are sought. This article presents a number of design techniques that greatly relax the tradeoffs between the speed and power consumption of functions such as multiplexers (MUXs), frequency dividers, and equalizers. Examples include quadrature multiplexing, charge steering, and feedforward techniques. The concepts have been demonstrated in CMOS transceivers up to 56 GHz.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"6-15"},"PeriodicalIF":1.6,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41460086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/mnano.2022.3160772
Tejinder Singh, R. Mansour
Chalcogenide phase-change materials (PCMs) have been widely used in optical storage media and nonvolatile memory devices applications. Over the past several years, there has been interest in exploiting PCM technology, especially germanium telluride (GeTe) and its alloys, for radio-frequency (RF) applications. The principle of operation of PCM-based RF devices is based on the ability of the material to transform from a high-resistivity (amorphous phase) to low-resistivity state (crystalline phase) and vice versa, with the application of a short, thermal pulse. Actuation pulses are applied to microheaters embedded with the PCM junction to switch between the two states. The PCM switch can exhibit more than five orders of resistance change between the two states. PCM-based RF switches are expected to bridge the gap between semiconductor switches and microelectromechanical systems (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. In addition to miniaturization, GeTe-based switches offer unique latching functionality and ease of monolithic integration with other RF circuits. This article presents an overview of PCM technology and its applications to RF circuits. A brief history of the technology is presented first, followed by a discussion of the basic characteristics of PCMs. The steps of a fabrication process of PCM RF devices are illustrated. A description of RF-PCM switch is presented in detail along with a comparison between RF performance of PCM switches and other existing commercial switches. As examples of application of the PCM technology to other RF circuits, the article concludes by presenting a crossbar switch matrix, phase shifter, and variable attenuator, realized using the PCM technology.
{"title":"Chalcogenide Phase-Change Material Germanium Telluride for Radio-Frequency Applications: An overview","authors":"Tejinder Singh, R. Mansour","doi":"10.1109/mnano.2022.3160772","DOIUrl":"https://doi.org/10.1109/mnano.2022.3160772","url":null,"abstract":"Chalcogenide phase-change materials (PCMs) have been widely used in optical storage media and nonvolatile memory devices applications. Over the past several years, there has been interest in exploiting PCM technology, especially germanium telluride (GeTe) and its alloys, for radio-frequency (RF) applications. The principle of operation of PCM-based RF devices is based on the ability of the material to transform from a high-resistivity (amorphous phase) to low-resistivity state (crystalline phase) and vice versa, with the application of a short, thermal pulse. Actuation pulses are applied to microheaters embedded with the PCM junction to switch between the two states. The PCM switch can exhibit more than five orders of resistance change between the two states. PCM-based RF switches are expected to bridge the gap between semiconductor switches and microelectromechanical systems (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. In addition to miniaturization, GeTe-based switches offer unique latching functionality and ease of monolithic integration with other RF circuits. This article presents an overview of PCM technology and its applications to RF circuits. A brief history of the technology is presented first, followed by a discussion of the basic characteristics of PCMs. The steps of a fabrication process of PCM RF devices are illustrated. A description of RF-PCM switch is presented in detail along with a comparison between RF performance of PCM switches and other existing commercial switches. As examples of application of the PCM technology to other RF circuits, the article concludes by presenting a crossbar switch matrix, phase shifter, and variable attenuator, realized using the PCM technology.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"26-41"},"PeriodicalIF":1.6,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47958532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/mnano.2022.3160773
Kaixue Ma, Mingyun Liu, Zonglin Ma, K. Seng
Radio-frequency (RF) integrated circuits (ICs) and millimeter-wave (mm-wave) ICs play crucial roles in modern wireless communication systems in laptops, smart phones, tablets, and so on. Silicon-based processes that have low cost and high integrity prompt the wide adoption of RF/mm-wave ICs in consumer electronics. However, the high substrate and metal losses of commercial silicon are considered inherent drawbacks, especially for RFIC designs with low-resistivity silicon of ∼10 Ω/square. We propose a multiple tanks topology to overcome this issue. The topology utilizes coupled multiple coils as a transformer to improve the equivalent quality factor (Q factor) of the tanks. Different applications if ICs, such as voltage-controlled oscillators (VCOs), dividers, power amplifiers (PAs), switches, and other circuits with frequencies up to 300 GHz, verify that by using this technique, dedicated RF/mm-wave IC performance can be significantly improved. Moreover, a 60-GHz transceiver system-on-chip (SOC) based on this technique is verified. This article presents the proposed method and implementation, from the fundamental concept and analysis to IC and system verification.
{"title":"Multiple Tanks Technique: Application to silicon-based radio-frequency and millimeter-wave integrated circuits","authors":"Kaixue Ma, Mingyun Liu, Zonglin Ma, K. Seng","doi":"10.1109/mnano.2022.3160773","DOIUrl":"https://doi.org/10.1109/mnano.2022.3160773","url":null,"abstract":"Radio-frequency (RF) integrated circuits (ICs) and millimeter-wave (mm-wave) ICs play crucial roles in modern wireless communication systems in laptops, smart phones, tablets, and so on. Silicon-based processes that have low cost and high integrity prompt the wide adoption of RF/mm-wave ICs in consumer electronics. However, the high substrate and metal losses of commercial silicon are considered inherent drawbacks, especially for RFIC designs with low-resistivity silicon of ∼10 Ω/square. We propose a multiple tanks topology to overcome this issue. The topology utilizes coupled multiple coils as a transformer to improve the equivalent quality factor (Q factor) of the tanks. Different applications if ICs, such as voltage-controlled oscillators (VCOs), dividers, power amplifiers (PAs), switches, and other circuits with frequencies up to 300 GHz, verify that by using this technique, dedicated RF/mm-wave IC performance can be significantly improved. Moreover, a 60-GHz transceiver system-on-chip (SOC) based on this technique is verified. This article presents the proposed method and implementation, from the fundamental concept and analysis to IC and system verification.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"42-60"},"PeriodicalIF":1.6,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43491809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/mnano.2022.3160771
Aasish Boora, Bharatha Kumar Thangarasu, K. Yeo
This work presents a single-chip nanowatt receiver with three main design blocks: the input matching network (IMN), the envelope detector (ED), and the comparator. A center-symmetric pseudobalun Dickson detector with body-bias control is proposed to enhance the receiver performance in terms of sensitivity and low dc power consumption at higher data rates. The receiver supports ON–OFF keying (OOK)-modulated signals in the 2.4-GHz Industry, Science, Medicine (ISM) band at data rates up to 400 Kb/s, achieves a measured latency of only ${3}{.}{87}hspace{0.33em}mathit{mu}hspace{0.06em}{text{s}}{,}$ and consumes only 11.7 nW of power. The receiver is implemented in a 40-nm CMOS process and operates from 0.8- and 0.5-V supply voltages.
{"title":"Nanowatt Receiver for High-Data-Rate Advanced Internet of Things and Microwave Applications: A novel exploitation of body bias and stage ratios in a Dickson detector","authors":"Aasish Boora, Bharatha Kumar Thangarasu, K. Yeo","doi":"10.1109/mnano.2022.3160771","DOIUrl":"https://doi.org/10.1109/mnano.2022.3160771","url":null,"abstract":"This work presents a single-chip nanowatt receiver with three main design blocks: the input matching network (IMN), the envelope detector (ED), and the comparator. A center-symmetric pseudobalun Dickson detector with body-bias control is proposed to enhance the receiver performance in terms of sensitivity and low dc power consumption at higher data rates. The receiver supports ON–OFF keying (OOK)-modulated signals in the 2.4-GHz Industry, Science, Medicine (ISM) band at data rates up to 400 Kb/s, achieves a measured latency of only ${3}{.}{87}hspace{0.33em}mathit{mu}hspace{0.06em}{text{s}}{,}$ and consumes only 11.7 nW of power. The receiver is implemented in a 40-nm CMOS process and operates from 0.8- and 0.5-V supply voltages.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"16-25"},"PeriodicalIF":1.6,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42210603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Emerging nonvolatile main memory (NVMM) suffers from secure vulnerability due to its nonvolatility. To address this issue, existing methods tend to employ the encryption engine on the CPU side for encryption. However, this incurs large energy and latency overhead due to the massive data movement between the CPU and NVMM. On the other hand, popular encryption algorithms like the Advanced Encryption Standard (AES) usually involve massive bit-level parallelism. As a result, an emerging technology named logic-in-memory (LiM), which leverages the electrical characteristics of nonvolatile devices to enable efficient in-memory Boolean operations in parallel, is a promising solution to eliminating data movement overhead and enables faster and more energy-efficient encryption.
{"title":"Efficient In-Memory AES Encryption Implementation Using a General Memristive Logic: Surmounting the data movement bottleneck","authors":"Mingyuan Ma, Yu Zhu, Zhenhua Zhu, Rui Yuan, Jialong Liu, Liying Xu, Yuchao Yang, Yu Wang","doi":"10.1109/mnano.2022.3141514","DOIUrl":"https://doi.org/10.1109/mnano.2022.3141514","url":null,"abstract":"Emerging nonvolatile main memory (NVMM) suffers from secure vulnerability due to its nonvolatility. To address this issue, existing methods tend to employ the encryption engine on the CPU side for encryption. However, this incurs large energy and latency overhead due to the massive data movement between the CPU and NVMM. On the other hand, popular encryption algorithms like the Advanced Encryption Standard (AES) usually involve massive bit-level parallelism. As a result, an emerging technology named logic-in-memory (LiM), which leverages the electrical characteristics of nonvolatile devices to enable efficient in-memory Boolean operations in parallel, is a promising solution to eliminating data movement overhead and enables faster and more energy-efficient encryption.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":"16 1","pages":"24-C3"},"PeriodicalIF":1.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47488786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-01DOI: 10.1109/mnano.2022.3141515
P. Mannocci, Andrea Baroni, Enrico Melacarne, C. Zambelli, P. Olivo, E. Pérez, C. Wenger, Daniele Ielmin
In-Memory Computing (IMC) is one of the most promising candidates for data-intensive computing accelerators of machine learning (ML). A key ML algorithm for dimensionality reduction and classification is principal component analysis (PCA), which heavily relies on matrix-vector multiplications (MVM) for which classic von Neumann architectures are not optimized. Here, we provide the experimental demonstration of a new IMC-based PCA algorithm based on power iteration and deflation executed in a 4-kbit array of resistive switching random-access memory (RRAM). The classification accuracy of the Wisconsin Breast Cancer data set reaches 95.43%, close to floating-point implementation. Our simulations indicate a 250× improvement in energy efficiency compared to commercial GPUs, thus supporting IMC for energy-efficient ML in modern data-intensive computing.
{"title":"In-Memory Principal Component Analysis by Crosspoint Array of Resistive Switching Memory: A new hardware approach for energy-efficient data analysis in edge computing","authors":"P. Mannocci, Andrea Baroni, Enrico Melacarne, C. Zambelli, P. Olivo, E. Pérez, C. Wenger, Daniele Ielmin","doi":"10.1109/mnano.2022.3141515","DOIUrl":"https://doi.org/10.1109/mnano.2022.3141515","url":null,"abstract":"In-Memory Computing (IMC) is one of the most promising candidates for data-intensive computing accelerators of machine learning (ML). A key ML algorithm for dimensionality reduction and classification is principal component analysis (PCA), which heavily relies on matrix-vector multiplications (MVM) for which classic von Neumann architectures are not optimized. Here, we provide the experimental demonstration of a new IMC-based PCA algorithm based on power iteration and deflation executed in a 4-kbit array of resistive switching random-access memory (RRAM). The classification accuracy of the Wisconsin Breast Cancer data set reaches 95.43%, close to floating-point implementation. Our simulations indicate a 250× improvement in energy efficiency compared to commercial GPUs, thus supporting IMC for energy-efficient ML in modern data-intensive computing.","PeriodicalId":44724,"journal":{"name":"IEEE Nanotechnology Magazine","volume":" ","pages":"4-13"},"PeriodicalIF":1.6,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46952695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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