Pub Date : 2024-04-30DOI: 10.1109/TNANO.2024.3394547
Anshul;Rishu Chaujar
In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (I off ) is remarkably reduced, and the switching ratio (I on /I off ) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.
{"title":"Semi-Empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET","authors":"Anshul;Rishu Chaujar","doi":"10.1109/TNANO.2024.3394547","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3394547","url":null,"abstract":"In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (I\u0000<sub>off</sub>\u0000) is remarkably reduced, and the switching ratio (I\u0000<sub>on</sub>\u0000/I\u0000<sub>off</sub>\u0000) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"400-407"},"PeriodicalIF":2.4,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140844471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-26DOI: 10.1109/TNANO.2024.3394294
Reza Nekovei;Amit Verma
This work explores the low-temperature performance of a field-effect transistor with a carbon nanotube as the active channel. The device topology is an ideal cylindrical gate-all-around with the nanotube coaxially aligned. The nanotube considered is a single-wall zigzag (49,0). Electron transport is modeled using Ensemble Monte Carlo (EMC) simulations coupled self-consistently with the electrostatic solver. The electrostatic solver solves Gauss Law in integral form. Electron scattering mechanisms include longitudinal acoustic and optical phonons and a single radial breathing mode phonon. A wide range of temperatures is considered – from 4K to 220K to determine the effects of temperature in relation to device size and dielectric on the electronic response. Both steady-state and device transient responses are explored. The device is seen to work very well across the wide range of temperatures explored, with differences in performance attributed to the differences in electron scattering rates for different temperatures. In all cases, electrons are found to deliver up to a fraction of a microwatt of power.
{"title":"Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors","authors":"Reza Nekovei;Amit Verma","doi":"10.1109/TNANO.2024.3394294","DOIUrl":"10.1109/TNANO.2024.3394294","url":null,"abstract":"This work explores the low-temperature performance of a field-effect transistor with a carbon nanotube as the active channel. The device topology is an ideal cylindrical gate-all-around with the nanotube coaxially aligned. The nanotube considered is a single-wall zigzag (49,0). Electron transport is modeled using Ensemble Monte Carlo (EMC) simulations coupled self-consistently with the electrostatic solver. The electrostatic solver solves Gauss Law in integral form. Electron scattering mechanisms include longitudinal acoustic and optical phonons and a single radial breathing mode phonon. A wide range of temperatures is considered – from 4K to 220K to determine the effects of temperature in relation to device size and dielectric on the electronic response. Both steady-state and device transient responses are explored. The device is seen to work very well across the wide range of temperatures explored, with differences in performance attributed to the differences in electron scattering rates for different temperatures. In all cases, electrons are found to deliver up to a fraction of a microwatt of power.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"393-399"},"PeriodicalIF":2.4,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140806392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Energy consumption is a primary concern in the computational process of heavy networks like Google, etc., where the key goal is to make them ultra-fast with low heat generation. Optical processing can play an important role in shrinking the heat energy and allow the system to work smoothly but beyond the Boltzmann limit of kTLn2. In the current epoch, optical reversible logic functions are greatly considered as a potential solution for minimizing heat dissipation or information loss and found applications in nanotechnology, logic circuits for biomedical applications, and so on. This work proposed the optical Kerr effect-based multifunctional plasmonic logic device. The Kerr effect provides switching of optical signal across the output ports of the Mach-Zehnder interferometer (MZI) with a high extinctionratio (ER). The intensity of the input signal is defined as different states of input logic. In addition, the presence and absence of an optical signal at output ports are used to set logic ‘1’ and ‘0’, respectively. Finally, four different logic functions including reversible Toffoli gate (TG), half adder (HA), NOR and XOR gate are realized through the proposed device. The device is analyzed through the finite difference time domain method in Opti-FDTD. Further, the analysis of basic elements is done in terms of ER, insertion loss (IL), and transmission efficiency.
{"title":"MIM Waveguide Based Multi-Functional Plasmonic Logic Device by Phase Modulation","authors":"Lokendra Singh;Prakash Pareek;Chinmoy Saha;Vigneswaran Dharsthanan;Niteshkumar Agrawal;Roshan Kumar","doi":"10.1109/TNANO.2024.3390789","DOIUrl":"10.1109/TNANO.2024.3390789","url":null,"abstract":"Energy consumption is a primary concern in the computational process of heavy networks like Google, etc., where the key goal is to make them ultra-fast with low heat generation. Optical processing can play an important role in shrinking the heat energy and allow the system to work smoothly but beyond the Boltzmann limit of kTLn2. In the current epoch, optical reversible logic functions are greatly considered as a potential solution for minimizing heat dissipation or information loss and found applications in nanotechnology, logic circuits for biomedical applications, and so on. This work proposed the optical Kerr effect-based multifunctional plasmonic logic device. The Kerr effect provides switching of optical signal across the output ports of the Mach-Zehnder interferometer (MZI) with a high extinctionratio (ER). The intensity of the input signal is defined as different states of input logic. In addition, the presence and absence of an optical signal at output ports are used to set logic ‘1’ and ‘0’, respectively. Finally, four different logic functions including reversible Toffoli gate (TG), half adder (HA), NOR and XOR gate are realized through the proposed device. The device is analyzed through the finite difference time domain method in Opti-FDTD. Further, the analysis of basic elements is done in terms of ER, insertion loss (IL), and transmission efficiency.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"368-375"},"PeriodicalIF":2.4,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140628021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-18DOI: 10.1109/TNANO.2024.3390793
Sekhar Reddy Kola;Yiming Li;Rajat Butola
In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly; in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R 2 -score prove that the ANN model properly grasps information from the dataset successfully; thus, it can be used to model emerging CFETs for circuit simulation.
{"title":"Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs","authors":"Sekhar Reddy Kola;Yiming Li;Rajat Butola","doi":"10.1109/TNANO.2024.3390793","DOIUrl":"10.1109/TNANO.2024.3390793","url":null,"abstract":"In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly; in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R\u0000<sup>2</sup>\u0000-score prove that the ANN model properly grasps information from the dataset successfully; thus, it can be used to model emerging CFETs for circuit simulation.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"386-392"},"PeriodicalIF":2.4,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140630348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As a replacement for conventional silicon (Si), the germanium (Ge) materials have attracted interest because Ge provides larger carrier mobility and is advantageous for high-speed switching. In this study, the silicon-germanium (SiGe) ultrashort-gate transistor performances were studied using electrical-thermal analysis. The material properties of SiGe can be modified by regulating the mole fraction in Si $_{1-x}$ Ge $_{x}$ , and the different material characteristics affect the nanoscale transistor performance because channel regulation strongly depends on the bandgap energy. This study aims to reveal the structural and material designs of SiGe transistors to ensure sufficient performance and reliability.
{"title":"Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations","authors":"Shiun Yamakiri;Takaya Sugiura;Kenta Yamamura;Yuta Watanabe;Nobuhiko Nakano","doi":"10.1109/TNANO.2024.3389209","DOIUrl":"10.1109/TNANO.2024.3389209","url":null,"abstract":"As a replacement for conventional silicon (Si), the germanium (Ge) materials have attracted interest because Ge provides larger carrier mobility and is advantageous for high-speed switching. In this study, the silicon-germanium (SiGe) ultrashort-gate transistor performances were studied using electrical-thermal analysis. The material properties of SiGe can be modified by regulating the mole fraction in Si\u0000<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>\u0000 Ge\u0000<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>\u0000, and the different material characteristics affect the nanoscale transistor performance because channel regulation strongly depends on the bandgap energy. This study aims to reveal the structural and material designs of SiGe transistors to ensure sufficient performance and reliability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"361-367"},"PeriodicalIF":2.4,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140609611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The reduction in transistor count has long been a big challenge and an ongoing objective in the design of Ternary Full Adders (TFAs). Capacitive Threshold Logic (CTL) is a well-known logic style requiring a small number of transistors to implement a circuit. This paper presents a novel CTL TFA that utilizes only 21 transistors, three of which function as capacitors. Reducing the number of transistors can achieve a more compact adder cell with fewer internal wires. Simulations by HSPICE and 32nm CNFET technology demonstrate promising results for the new TFA compared to previous competitors. It produces the output carry at the fastest speed and also utilizes six fewer transistors and three fewer nets than its closest competitor with the fewest elements. When a comprehensive evaluation factor including delay, power, and area is considered, the proposed design exhibits a performance superiority of 45.1% and 21.4% compared to the previous top-performing CTL and non-CTL designs, respectively.
{"title":"21T Ternary Full Adder Based on Capacitive Threshold Logic and Carbon Nanotube FETs","authors":"Marzieh Hashemipour;Reza Faghih Mirzaee;Keivan Navi","doi":"10.1109/TNANO.2024.3386825","DOIUrl":"10.1109/TNANO.2024.3386825","url":null,"abstract":"The reduction in transistor count has long been a big challenge and an ongoing objective in the design of Ternary Full Adders (TFAs). Capacitive Threshold Logic (CTL) is a well-known logic style requiring a small number of transistors to implement a circuit. This paper presents a novel CTL TFA that utilizes only 21 transistors, three of which function as capacitors. Reducing the number of transistors can achieve a more compact adder cell with fewer internal wires. Simulations by HSPICE and 32nm CNFET technology demonstrate promising results for the new TFA compared to previous competitors. It produces the output carry at the fastest speed and also utilizes six fewer transistors and three fewer nets than its closest competitor with the fewest elements. When a comprehensive evaluation factor including delay, power, and area is considered, the proposed design exhibits a performance superiority of 45.1% and 21.4% compared to the previous top-performing CTL and non-CTL designs, respectively.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"338-345"},"PeriodicalIF":2.4,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-08DOI: 10.1109/TNANO.2024.3385834
S. Chowdhury;Abhinav Pratap Singh;S. Jit;P. Venkateswaran;D. Somvanshi
In this work, we have investigated the performance of a p-WSe 2 Nanosheets (NSs)/n-WS 2 Quantum dots (QDs)/p-Si (2D-0D-3D) based mixed-dimensional (MD) multilayer heterostructure photodetector with Ag as top contact electrode. The WSe 2 NSs and WS 2 QDs are synthesized by solvothermal and hydrothermal synthesis methods, respectively. The proposed photodetector exhibits a broad photo response over 300 nm (ultraviolet) to 1100 nm (infrared) with the maximum responsivity (R) of 2.14×10 2 A/W, detectivity (D * ) of 2.35×10 13 Jones, and external quantum efficiency (EQE) of 82710% at 322 nm and -3 V reverse bias voltage. The measured rise time and fall time of the device are 24 ms and 21 ms, respectively. Our proposed p-WSe 2 NS/n-WS 2 QDs/p-Si (2D-0D-3D) photodetector is shown to have nearly ∼ 8 times higher values of R and EQE, 17 times higher value of D * , 34 times lower value of the rise time and 38 times lower value of the fall time as compared to the respective performance parameters of the n-WS 2 QDs/p-Si (0D-3D) MD heterojunction photodetector.
{"title":"p-WSe2 Nanosheets/ n-WS2 Quantum Dots/p-Si (2D-0D-3D) Mixed-Dimensional Multilayer Heterostructures Based High-Performance Broadband Photodetector","authors":"S. Chowdhury;Abhinav Pratap Singh;S. Jit;P. Venkateswaran;D. Somvanshi","doi":"10.1109/TNANO.2024.3385834","DOIUrl":"10.1109/TNANO.2024.3385834","url":null,"abstract":"In this work, we have investigated the performance of a p-WSe\u0000<sub>2</sub>\u0000 Nanosheets (NSs)/n-WS\u0000<sub>2</sub>\u0000 Quantum dots (QDs)/p-Si (2D-0D-3D) based mixed-dimensional (MD) multilayer heterostructure photodetector with Ag as top contact electrode. The WSe\u0000<sub>2</sub>\u0000 NSs and WS\u0000<sub>2</sub>\u0000 QDs are synthesized by solvothermal and hydrothermal synthesis methods, respectively. The proposed photodetector exhibits a broad photo response over 300 nm (ultraviolet) to 1100 nm (infrared) with the maximum responsivity (R) of 2.14×10\u0000<sup>2</sup>\u0000 A/W, detectivity (D\u0000<sup>*</sup>\u0000) of 2.35×10\u0000<sup>13</sup>\u0000 Jones, and external quantum efficiency (EQE) of 82710% at 322 nm and -3 V reverse bias voltage. The measured rise time and fall time of the device are 24 ms and 21 ms, respectively. Our proposed p-WSe\u0000<sub>2</sub>\u0000 NS/n-WS\u0000<sub>2</sub>\u0000 QDs/p-Si (2D-0D-3D) photodetector is shown to have nearly ∼ 8 times higher values of R and EQE, 17 times higher value of D\u0000<sup>*</sup>\u0000, 34 times lower value of the rise time and 38 times lower value of the fall time as compared to the respective performance parameters of the n-WS\u0000<sub>2</sub>\u0000 QDs/p-Si (0D-3D) MD heterojunction photodetector.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"346-351"},"PeriodicalIF":2.4,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-08DOI: 10.1109/TNANO.2024.3385854
Sajjan Kumar Jha;Gaurav Varshney;Rabindra Kumar
A technique of slanting MIM plasmonic waveguide-based cavity is numerically studied and implemented. Initially, the proposed rectangular cavity is proficient for generating five Breit-Wigner and six Fano resonances. The polygonal cavity is designed out of rectangular cavity by slanting one of its edge that reshaped the Breit-Wigner resonances into Fano profile with remaining resonances unaffected. The polygonal cavity obtains total eleven Fano resonances by coupling with an inclined split waveguide. The influence of slanting on reshaping of resonances is studied with orthogonality of modes and overlap integration has been calculated. The Fano resonances in the transmittance spectrum are individually validated with Fano profile formula and the corresponding Fano shape parameter are computed. The validation is done with the help of Levenberg-Marquardt algorithm and the goodness of fits are calculated. The best performance parameters of Fano resonances are expressed as operating wavelength ${bm{lambda }} = 450 - 1800 {text{nm}}$ , sensitivity $( {bm{S}} ) = 1643 {text{nm}}/{rm{RIU}}$ , full-width, half maxima $( {{bm{FWHM}}} ) = 0.76 {text{nm}}$ , quality factor ( ${bm{Q}}) = 743.77$ and figure of merit $( {{bm{FOM}}} ) = 738.69 {rm{RIU}}^{ - 1}$ . The proposed device is further studied for the detection of certain cancer types including Adrenal cancer, Breast Type1 cancer and Breast Type2 cancer. The maximum sensitivity in case of detection of all the three cancer types yielded out to be ${bm{S}} = 1642.857 {text{nm}}/{rm{RIU}}$ . The other sensing performance parameter called figure of merit is calculated to be ${bm{FOM}} = 610.90 {rm{RI}}{{{rm{U}}}^{ - 1}}$ for Adrenal and Breast Type 1 and ${bm{FOM}} = 671.99 {rm{RI}}{{{rm{U}}}^{ - 1}}$ for Breast Type 2 cancers.
{"title":"Levenberg-Marquardt Validation of Multiple Fano Resonances in Plasmonic Cavity for Adrenal/Breast Cancer Detection","authors":"Sajjan Kumar Jha;Gaurav Varshney;Rabindra Kumar","doi":"10.1109/TNANO.2024.3385854","DOIUrl":"10.1109/TNANO.2024.3385854","url":null,"abstract":"A technique of slanting MIM plasmonic waveguide-based cavity is numerically studied and implemented. Initially, the proposed rectangular cavity is proficient for generating five Breit-Wigner and six Fano resonances. The polygonal cavity is designed out of rectangular cavity by slanting one of its edge that reshaped the Breit-Wigner resonances into Fano profile with remaining resonances unaffected. The polygonal cavity obtains total eleven Fano resonances by coupling with an inclined split waveguide. The influence of slanting on reshaping of resonances is studied with orthogonality of modes and overlap integration has been calculated. The Fano resonances in the transmittance spectrum are individually validated with Fano profile formula and the corresponding Fano shape parameter are computed. The validation is done with the help of Levenberg-Marquardt algorithm and the goodness of fits are calculated. The best performance parameters of Fano resonances are expressed as operating wavelength \u0000<inline-formula><tex-math>${bm{lambda }} = 450 - 1800 {text{nm}}$</tex-math></inline-formula>\u0000, sensitivity \u0000<inline-formula><tex-math>$( {bm{S}} ) = 1643 {text{nm}}/{rm{RIU}}$</tex-math></inline-formula>\u0000, full-width, half maxima \u0000<inline-formula><tex-math>$( {{bm{FWHM}}} ) = 0.76 {text{nm}}$</tex-math></inline-formula>\u0000, quality factor (\u0000<inline-formula><tex-math>${bm{Q}}) = 743.77$</tex-math></inline-formula>\u0000 and figure of merit \u0000<inline-formula><tex-math>$( {{bm{FOM}}} ) = 738.69 {rm{RIU}}^{ - 1}$</tex-math></inline-formula>\u0000. The proposed device is further studied for the detection of certain cancer types including Adrenal cancer, Breast Type1 cancer and Breast Type2 cancer. The maximum sensitivity in case of detection of all the three cancer types yielded out to be \u0000<inline-formula><tex-math>${bm{S}} = 1642.857 {text{nm}}/{rm{RIU}}$</tex-math></inline-formula>\u0000. The other sensing performance parameter called figure of merit is calculated to be \u0000<inline-formula><tex-math>${bm{FOM}} = 610.90 {rm{RI}}{{{rm{U}}}^{ - 1}}$</tex-math></inline-formula>\u0000 for Adrenal and Breast Type 1 and \u0000<inline-formula><tex-math>${bm{FOM}} = 671.99 {rm{RI}}{{{rm{U}}}^{ - 1}}$</tex-math></inline-formula>\u0000 for Breast Type 2 cancers.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"352-360"},"PeriodicalIF":2.4,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-05DOI: 10.1109/TNANO.2024.3385507
Saughar Jarchi
In this paper, a layered transmission line based on graphene is designed and investigated to provide amplitude modulation in the low terahertz frequency band. The proposed primary structure is composed of a graphene transmission line on a dielectric layer, as substrate, loaded by a transverse graphene strip and backed by a continuous graphene sheet, as ground plane. The intermediate graphene strip is electrically isolated from the input and output ports. The structure is first investigated by full-wave simulation method, with various chemical potentials of graphenes, and the ABCD matrices are extracted. Then, applying the analytical method based on the ABCD matrices, the scattering parameters of the cascade of several segments of the proposed primary transmission line are investigated, and the promising configuration for the amplitude modulator is derived. It is shown that, variations of signal transmission required by amplitude modulation performance are achieved by cascading six segments of the proposed transmission line and changing the chemical potential of graphene parts. The designed amplitude modulator is investigated, and high modulation depth of nearly 100% and flat response in 3.4–3.8 THz frequency band is achieved.
{"title":"Amplitude Modulator Design Using Series Graphene Transmission Lines in Terahertz Frequency Band","authors":"Saughar Jarchi","doi":"10.1109/TNANO.2024.3385507","DOIUrl":"10.1109/TNANO.2024.3385507","url":null,"abstract":"In this paper, a layered transmission line based on graphene is designed and investigated to provide amplitude modulation in the low terahertz frequency band. The proposed primary structure is composed of a graphene transmission line on a dielectric layer, as substrate, loaded by a transverse graphene strip and backed by a continuous graphene sheet, as ground plane. The intermediate graphene strip is electrically isolated from the input and output ports. The structure is first investigated by full-wave simulation method, with various chemical potentials of graphenes, and the ABCD matrices are extracted. Then, applying the analytical method based on the ABCD matrices, the scattering parameters of the cascade of several segments of the proposed primary transmission line are investigated, and the promising configuration for the amplitude modulator is derived. It is shown that, variations of signal transmission required by amplitude modulation performance are achieved by cascading six segments of the proposed transmission line and changing the chemical potential of graphene parts. The designed amplitude modulator is investigated, and high modulation depth of nearly 100% and flat response in 3.4–3.8 THz frequency band is achieved.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"323-328"},"PeriodicalIF":2.4,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140596645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-04DOI: 10.1109/TNANO.2024.3384968
Tian-Tong Cheng;Qiang Li;Yu-Xi Yang;Zhi-Wei Zheng
As the negative capacitance field-effect transistors (NCFETs) have extensive application prospects and advanced technological support in the analog/radio-frequency (RF) domains, it is important to investigate the theoretical performances of the NCFETs with various feasible structures. In this article, utilizing the TCAD simulation tool and an experimentally calibrated ferroelectric model, we perform a comparative evaluation of MFMIS and MFIS, two prominent NCFET configurations, with regard to their DC/static characteristics and analog/RF performances. Through simulations involving varying ferroelectric thicknesses, it is seen that in comparison with the MFIS device, the MFMIS device demonstrates superior static performances in on-state current ( I ON ), off-state current ( I OFF ) and subthreshold swing ( SS ), and the underlying physical effects of these results have also been uncovered. Furthermore, we extracted the device-level analog/RF figures of merits (FoMs) like transconductance ( g m ), gate capacitance ( C gg ), output conductance ( g d ), cutoff frequency ( f T ), transconductance generation factor ( TGF ), transconductance frequency product ( TFP ), etc from the two structures. It is found that the MFMIS device still possesses advantages in these parameters, and as the thickness of ferroelectric layer increases, the advantages compared to the MFIS device become more pronounced. The investigations in this article indicate that the MFMIS NCFET exhibits superior adaptability and performances in enhancing the analog/RF capabilities of conventional devices as compared with the MFIS device.
{"title":"Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications","authors":"Tian-Tong Cheng;Qiang Li;Yu-Xi Yang;Zhi-Wei Zheng","doi":"10.1109/TNANO.2024.3384968","DOIUrl":"10.1109/TNANO.2024.3384968","url":null,"abstract":"As the negative capacitance field-effect transistors (NCFETs) have extensive application prospects and advanced technological support in the analog/radio-frequency (RF) domains, it is important to investigate the theoretical performances of the NCFETs with various feasible structures. In this article, utilizing the TCAD simulation tool and an experimentally calibrated ferroelectric model, we perform a comparative evaluation of MFMIS and MFIS, two prominent NCFET configurations, with regard to their DC/static characteristics and analog/RF performances. Through simulations involving varying ferroelectric thicknesses, it is seen that in comparison with the MFIS device, the MFMIS device demonstrates superior static performances in on-state current (\u0000<italic>I</i>\u0000<sub>ON</sub>\u0000), off-state current (\u0000<italic>I</i>\u0000<sub>OFF</sub>\u0000) and subthreshold swing (\u0000<italic>SS</i>\u0000), and the underlying physical effects of these results have also been uncovered. Furthermore, we extracted the device-level analog/RF figures of merits (FoMs) like transconductance (\u0000<italic>g</i>\u0000<sub>m</sub>\u0000), gate capacitance (\u0000<italic>C</i>\u0000<sub>gg</sub>\u0000), output conductance (\u0000<italic>g</i>\u0000<sub>d</sub>\u0000), cutoff frequency (\u0000<italic>f</i>\u0000<sub>T</sub>\u0000), transconductance generation factor (\u0000<italic>TGF</i>\u0000), transconductance frequency product (\u0000<italic>TFP</i>\u0000), etc from the two structures. It is found that the MFMIS device still possesses advantages in these parameters, and as the thickness of ferroelectric layer increases, the advantages compared to the MFIS device become more pronounced. The investigations in this article indicate that the MFMIS NCFET exhibits superior adaptability and performances in enhancing the analog/RF capabilities of conventional devices as compared with the MFIS device.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"317-322"},"PeriodicalIF":2.4,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140603422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：