Pub Date : 2025-08-25DOI: 10.1109/TNANO.2025.3602073
Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair
In this work we propose a biasing scheme to modulate the retention behavior of oxide semiconductor based optoelectronic synapses. The method has been demonstrated using a zinc oxide thin film transistor, which exhibits persistent photoconductivity to UV light. The application of a negative gate bias prevents the recombination of photo-generated carriers, leading to a negligible decay in the post synaptic current and consequently, the retention time could extend beyond $10^{5}$s. The improvement in memory retention is observed in various synaptic functions such as short-term memory, long-term memory, duration-time-dependent plasticity and paired pulse facilitation. A five fold improvement in the % decay of post synaptic current was observed at $V_{gs}$ = −5 V, when compared to $V_{gs}$ = +5 V. Furthermore, we have assessed the impact of these improved retention properties on the performance of an artificial neural network, designed for pattern recognition of MNIST handwritten digits. The accuracy decayed drastically with time from 96% to nearly 40% at $V_{gs}$ = +5 V whereas it drops to only 94% at $V_{gs}$ = −5 V.
{"title":"Gate Tunable Retention in Optoelectronic Synapses Using Oxide Semiconductor Thin Film Transistors","authors":"Roshni Oommen;Adikiran S B;Akash R.;Gautham G;Aswathi R Nair","doi":"10.1109/TNANO.2025.3602073","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3602073","url":null,"abstract":"In this work we propose a biasing scheme to modulate the retention behavior of oxide semiconductor based optoelectronic synapses. The method has been demonstrated using a zinc oxide thin film transistor, which exhibits persistent photoconductivity to UV light. The application of a negative gate bias prevents the recombination of photo-generated carriers, leading to a negligible decay in the post synaptic current and consequently, the retention time could extend beyond <inline-formula><tex-math>$10^{5}$</tex-math></inline-formula>s. The improvement in memory retention is observed in various synaptic functions such as short-term memory, long-term memory, duration-time-dependent plasticity and paired pulse facilitation. A five fold improvement in the % decay of post synaptic current was observed at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V, when compared to <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V. Furthermore, we have assessed the impact of these improved retention properties on the performance of an artificial neural network, designed for pattern recognition of MNIST handwritten digits. The accuracy decayed drastically with time from 96% to nearly 40% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = +5 V whereas it drops to only 94% at <inline-formula><tex-math>$V_{gs}$</tex-math></inline-formula> = −5 V.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"434-438"},"PeriodicalIF":2.1,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-18DOI: 10.1109/TNANO.2025.3599842
Shuying Wang;Pengpeng Ren;Yewei Zhang;Mingzhao Yang;Runsheng Wang;Zhigang Ji
Nanosheet transistors has emerged as a potential structure of semiconductor technology. The introduction of Wrapped-Around Contact (WAC) and Backside Power Delivery Network, particularly the Backside Contact (BSC) in nanosheet transistors, has effectively promotes further scaling. This work contributes to design technology co-optimization (DTCO) for BSC technology by comprehensively exploring the impact of structural innovation, process parameters and dimension parameters. Through electro-thermal coupling simulations, we reveal the significant advantages of Backside Contact with WAC structure in terms of electrothermal properties compared to conventional structures. We also investigate the impact of contact resistivity, contact thermal resistivity, sheet width and number on device and circuit performance. This work provides an inspiration to optimize electro-thermal performance under advanced nodes.
{"title":"Towards Design-Technology Co-Optimization for Nanosheet Transistors With Backside Contact","authors":"Shuying Wang;Pengpeng Ren;Yewei Zhang;Mingzhao Yang;Runsheng Wang;Zhigang Ji","doi":"10.1109/TNANO.2025.3599842","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3599842","url":null,"abstract":"Nanosheet transistors has emerged as a potential structure of semiconductor technology. The introduction of Wrapped-Around Contact (WAC) and Backside Power Delivery Network, particularly the Backside Contact (BSC) in nanosheet transistors, has effectively promotes further scaling. This work contributes to design technology co-optimization (DTCO) for BSC technology by comprehensively exploring the impact of structural innovation, process parameters and dimension parameters. Through electro-thermal coupling simulations, we reveal the significant advantages of Backside Contact with WAC structure in terms of electrothermal properties compared to conventional structures. We also investigate the impact of contact resistivity, contact thermal resistivity, sheet width and number on device and circuit performance. This work provides an inspiration to optimize electro-thermal performance under advanced nodes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"439-444"},"PeriodicalIF":2.1,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145036786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-07DOI: 10.1109/TNANO.2025.3597001
Jasil T K;Ashish Kumar Yadav;Gyanendra Kumar Maurya;Vivek Garg;Sushil Kumar Pandey
One of the most important factors influencing the performance of Na-ion batteries (NIBs) is the anode’s quality. Currently, NIB anodes have numerous disadvantages, including low capacity, rapid volume change, temperature variable conductivity and poor thermal/chemical stability. In this work, the electronic and transport properties of undoped, doped and defective 1T-NbS2 monolayers were investigated using density functional theory calculations. The maximum quantum capacitance of 1T-NbS2 with S-vacancy (VS-NbS2) changes from 20.49 to 16.92 μF/cm2 across temperature ranges of 200 K to 1000 K, indicating its suitability as anode with temperature-stable capacity. The 1T-NbS2 monolayers exhibit high electrical conductivity with less than 6% fluctuation across a temperature range of 200 K to 1000 K, indicating thermally stable conductance. The 1T-NbS2 layered structure has substantially larger interlayer spacing of 0.615 nm than the size of Na ion (0.095 nm), as well as a relatively tiny variation (0.05 eV for VS-NbS2) in cohesive energies between sodiated and de-sodiated phases, making it a good choice for anodes. For VS-NbS2, the seebeck coefficient ranges from -5 to -40 μV/K, which is often obtained by the most commonly used Na-metal anode, demonstrating its appropriateness as anode. According to our findings, 1T-NbS2 is a great option for thermally stable NIB electrode applications.
{"title":"Enhancement of Functionalized 1T-NbS2 Monolayer Properties for the Superior Anode of Na-Ion Batteries","authors":"Jasil T K;Ashish Kumar Yadav;Gyanendra Kumar Maurya;Vivek Garg;Sushil Kumar Pandey","doi":"10.1109/TNANO.2025.3597001","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3597001","url":null,"abstract":"One of the most important factors influencing the performance of Na-ion batteries (NIBs) is the anode’s quality. Currently, NIB anodes have numerous disadvantages, including low capacity, rapid volume change, temperature variable conductivity and poor thermal/chemical stability. In this work, the electronic and transport properties of undoped, doped and defective 1T-NbS<sub>2</sub> monolayers were investigated using density functional theory calculations. The maximum quantum capacitance of 1T-NbS<sub>2</sub> with S-vacancy (V<sub>S</sub>-NbS<sub>2</sub>) changes from 20.49 to 16.92 μF/cm<sup>2</sup> across temperature ranges of 200 K to 1000 K, indicating its suitability as anode with temperature-stable capacity. The 1T-NbS<sub>2</sub> monolayers exhibit high electrical conductivity with less than 6% fluctuation across a temperature range of 200 K to 1000 K, indicating thermally stable conductance. The 1T-NbS<sub>2</sub> layered structure has substantially larger interlayer spacing of 0.615 nm than the size of Na ion (0.095 nm), as well as a relatively tiny variation (0.05 eV for V<sub>S</sub>-NbS<sub>2</sub>) in cohesive energies between sodiated and de-sodiated phases, making it a good choice for anodes. For V<sub>S</sub>-NbS<sub>2</sub>, the seebeck coefficient ranges from -5 to -40 μV/K, which is often obtained by the most commonly used Na-metal anode, demonstrating its appropriateness as anode. According to our findings, 1T-NbS<sub>2</sub> is a great option for thermally stable NIB electrode applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"421-427"},"PeriodicalIF":2.1,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders lower drain current than the FeFET thanks to the different carrier injection mechanism (i.e., band-to-band tunneling). Second, the memory window of FeTFET (1.48 V) is ∼1.5 times larger than the FeFET (0.95 V) due to an enhanced erase efficiency. As a result, the FeTFET shows the better training accuracy (∼91.5% ) even with the ∼25 times lower energy consumption (∼0.16 mJ) comparing with the FeFET (∼90.4% accuracy with 4.06 mJ energy consumption). Lastly, the FeTFET shows a good retention property (> 10 years) with a ∼107 endurance characteristic. In short, the FeTFET can be a promising candidate for a low-power synapse device.
{"title":"Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device","authors":"Seungwon Go;Sunwoo Lee;Jaekyun Son;Dong Keun Lee;Hyungju Noh;Jae Yeon Park;Seonggeun Kim;Hyunho Ahn;Sihyun Kim;Sangwan Kim","doi":"10.1109/TNANO.2025.3595532","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3595532","url":null,"abstract":"In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders lower drain current than the FeFET thanks to the different carrier injection mechanism (i.e., band-to-band tunneling). Second, the memory window of FeTFET (1.48 V) is ∼1.5 times larger than the FeFET (0.95 V) due to an enhanced erase efficiency. As a result, the FeTFET shows the better training accuracy (∼91.5% ) even with the ∼25 times lower energy consumption (∼0.16 mJ) comparing with the FeFET (∼90.4% accuracy with 4.06 mJ energy consumption). Lastly, the FeTFET shows a good retention property (> 10 years) with a ∼10<sup>7</sup> endurance characteristic. In short, the FeTFET can be a promising candidate for a low-power synapse device.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"413-416"},"PeriodicalIF":2.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-01DOI: 10.1109/TNANO.2025.3595009
Cheng-Lun Hsin;Kei-Cheng Yang;Chun-En Hong
Thermal waste heat scavenging has garnered significant attention in recent decades. In this study, we developed a thermoelectric module using earth-abundant elements and evaluated its power conversion performance over a temperature range of 40 to 250 °C. The n-type pillars were fabricated from Al-doped ZnO, while the p-type pillars consisted of a CuS/ZnO alloy. Both types of pillars were sintered in a furnace, and their respective figures of merit were measured up to 250 °C. The module, composed of 45 pairs of these pillars, demonstrated notable power conversion capabilities. Our experimental results highlight a cost-effective approach to manufacturing thermoelectric modules with earth-abundant elements, presenting a viable alternative to conventional methods that rely on expensive materials and complex fabrication processes.
{"title":"Thermoelectric Modules Using Earth-Abundant Elements: The Case of Zn, Cu, Al, O, and S","authors":"Cheng-Lun Hsin;Kei-Cheng Yang;Chun-En Hong","doi":"10.1109/TNANO.2025.3595009","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3595009","url":null,"abstract":"Thermal waste heat scavenging has garnered significant attention in recent decades. In this study, we developed a thermoelectric module using earth-abundant elements and evaluated its power conversion performance over a temperature range of 40 to 250 °C. The n-type pillars were fabricated from Al-doped ZnO, while the p-type pillars consisted of a CuS/ZnO alloy. Both types of pillars were sintered in a furnace, and their respective figures of merit were measured up to 250 °C. The module, composed of 45 pairs of these pillars, demonstrated notable power conversion capabilities. Our experimental results highlight a cost-effective approach to manufacturing thermoelectric modules with earth-abundant elements, presenting a viable alternative to conventional methods that rely on expensive materials and complex fabrication processes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"417-420"},"PeriodicalIF":2.1,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TNANO.2025.3592825
Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam
The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.
{"title":"Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles","authors":"Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam","doi":"10.1109/TNANO.2025.3592825","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3592825","url":null,"abstract":"The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"407-412"},"PeriodicalIF":2.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-16DOI: 10.1109/TNANO.2025.3589902
Masoud Berahman;Hamidreza Aghasi
This work explores the electronic transport properties of a double-gated tunneling field effect transistor (TFET) based on Janus monolayer PtSSe. Janus PtSSe, with its unique asymmetrical structure and inherent built-in electric polarization, offers exceptional electronic properties such as a tunable bandgap and high carrier mobility, making it a promising candidate for next-generation electronic devices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, the performance of the PtSSe-based TFET is evaluated, demonstrating a low subthreshold swing as low as 19 mV/dec and an Ion/Ioff ratio as high as $1.64 times 10^{8}$, and a maximum operating frequency of 0.88 THz depending achieved through optimization of doping concentration. The study also investigates the impact of spin-orbit coupling on the material’s electronic properties, offering insights for further optimization. These findings establish Janus PtSSe as a promising material for addressing the limitations of conventional silicon-based FETs and advancing nanoscale electronics by enabling high-performance, low-power devices.
{"title":"Tunneling Field Effect Transistors Based on Janus Monolayer PtSSe","authors":"Masoud Berahman;Hamidreza Aghasi","doi":"10.1109/TNANO.2025.3589902","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3589902","url":null,"abstract":"This work explores the electronic transport properties of a double-gated tunneling field effect transistor (TFET) based on Janus monolayer PtSSe. Janus PtSSe, with its unique asymmetrical structure and inherent built-in electric polarization, offers exceptional electronic properties such as a tunable bandgap and high carrier mobility, making it a promising candidate for next-generation electronic devices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, the performance of the PtSSe-based TFET is evaluated, demonstrating a low subthreshold swing as low as 19 mV/dec and an I<sub>on</sub>/I<sub>off</sub> ratio as high as <inline-formula><tex-math>$1.64 times 10^{8}$</tex-math></inline-formula>, and a maximum operating frequency of 0.88 THz depending achieved through optimization of doping concentration. The study also investigates the impact of spin-orbit coupling on the material’s electronic properties, offering insights for further optimization. These findings establish Janus PtSSe as a promising material for addressing the limitations of conventional silicon-based FETs and advancing nanoscale electronics by enabling high-performance, low-power devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"369-377"},"PeriodicalIF":2.1,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-02DOI: 10.1109/TNANO.2025.3585167
Kon-Woo Kwon;Yeongkyo Seo
This paper proposes a hybrid spintronic multi-level cell (MLC) optimized for fast and reliable memory operations. The proposed MLC employs two magnetic tunnel junctions with distinct magnetization characteristics within a single cell, leveraging their significant differences in critical current requirements to effectively mitigate write-disturb failures. Moreover, the proposed design incorporates a spin-orbit torque-based switching mechanism along with a device multiplexing architecture, which together enable a one-step write operation and an opportunistic one-step read operation. Simulations demonstrate up to a 2× reduction in latency compared to conventional spintronic MLCs, along with a 2× increase in area efficiency over single-level cell designs and a high write-disturb margin of 61$%$.
{"title":"Hybrid Multi-Level Cell Spin-Orbit Torque Memory for Fast and Robust Memory Operations","authors":"Kon-Woo Kwon;Yeongkyo Seo","doi":"10.1109/TNANO.2025.3585167","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3585167","url":null,"abstract":"This paper proposes a hybrid spintronic multi-level cell (MLC) optimized for fast and reliable memory operations. The proposed MLC employs two magnetic tunnel junctions with distinct magnetization characteristics within a single cell, leveraging their significant differences in critical current requirements to effectively mitigate write-disturb failures. Moreover, the proposed design incorporates a spin-orbit torque-based switching mechanism along with a device multiplexing architecture, which together enable a one-step write operation and an opportunistic one-step read operation. Simulations demonstrate up to a 2× reduction in latency compared to conventional spintronic MLCs, along with a 2× increase in area efficiency over single-level cell designs and a high write-disturb margin of 61<inline-formula><tex-math>$%$</tex-math></inline-formula>.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"363-368"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144634713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-02DOI: 10.1109/TNANO.2025.3584828
Yu-Hsun Nien;Yu-Ping Wang
As the industrialization is improving by way of science and technology in society, water pollution has become increasingly serious. Non-degradable organic matter exists in wastewater, which causes environmental deterioration. In order to solve this problem, we select titanium dioxide (TiO2) as the photocatalyst material with high activity, chemical stability and low cost. However, pure TiO2 has a large band gap (3.2 eV) and can only be activated under ultraviolet (UV) light. Therefore, TiO2 has to be modified to fit our requirement. Carbon dots (CDs) have up-conversion and down-conversion photoluminescence and inhibit the recombination of electron-hole pairs, Adding CDs can reduce the band gap width of TiO2, and increase the absorption of visible light significantly, thereby improving photocatalytic efficiency. We use citric acid as the carbon source and urea as the nitrogen source to prepare CDs by using the hydrothermal method, and prepare the CDs/TiO2 composite photocatalyst through the sol-gel method. The CDs/TiO2 composite photocatalyst shows stable and efficient photocatalytic performance for removal of methylene blue (MB), with a removal rate of 95.34%. In order to reuse the CDs/TiO2 composite photocatalyst powder, we use electrospinning technology to combine CDs/TiO2 composite photocatalyst with nylon 6,6 nanofibrous membranes. After three cycle tests, we confirm that it is recyclable and practical, and its removal rate is also increased to 99.39%.
{"title":"Preparation of Nanofibrous Membranes Containing Carbon Dots Composited With TiO2 Photocatalyst and Their Removal Rate of Methylene Blue Under Visible Light","authors":"Yu-Hsun Nien;Yu-Ping Wang","doi":"10.1109/TNANO.2025.3584828","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584828","url":null,"abstract":"As the industrialization is improving by way of science and technology in society, water pollution has become increasingly serious. Non-degradable organic matter exists in wastewater, which causes environmental deterioration. In order to solve this problem, we select titanium dioxide (TiO<sub>2</sub>) as the photocatalyst material with high activity, chemical stability and low cost. However, pure TiO<sub>2</sub> has a large band gap (3.2 eV) and can only be activated under ultraviolet (UV) light. Therefore, TiO<sub>2</sub> has to be modified to fit our requirement. Carbon dots (CDs) have up-conversion and down-conversion photoluminescence and inhibit the recombination of electron-hole pairs, Adding CDs can reduce the band gap width of TiO<sub>2</sub>, and increase the absorption of visible light significantly, thereby improving photocatalytic efficiency. We use citric acid as the carbon source and urea as the nitrogen source to prepare CDs by using the hydrothermal method, and prepare the CDs/TiO<sub>2</sub> composite photocatalyst through the sol-gel method. The CDs/TiO<sub>2</sub> composite photocatalyst shows stable and efficient photocatalytic performance for removal of methylene blue (MB), with a removal rate of 95.34%. In order to reuse the CDs/TiO<sub>2</sub> composite photocatalyst powder, we use electrospinning technology to combine CDs/TiO<sub>2</sub> composite photocatalyst with nylon 6,6 nanofibrous membranes. After three cycle tests, we confirm that it is recyclable and practical, and its removal rate is also increased to 99.39%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"338-346"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-01DOI: 10.1109/TNANO.2025.3584854
P. Agilandeswari;G. Thavasi Raja;R. Rajasekar
In this paper, the novel deep learning-based nano scale optical filter is designed with narrow bandwidth for 6G network and Dense Wavelength Division Multiplexing (DWDM) systems. The hybrid Long Short-Term Memory Neural Network (LSTM-NN)-transformer based deep learning algorithm is implemented to accurately predict the structural parameter of the optical bandpass filter. The inverse design approach-based hybrid deep learning model is designed to improve the performance of the optical bandpass filter. The photonic filter performance parameters are numerically analyzed by Finite Difference Time Domain (FDTD) method. The proposed hybrid model is designed with very low mean square error of 5.4207 × 10−8 and less computation time of 834.81 seconds. The presented photonics platform is designed with narrow bandwidth of 1.12 THz and footprint is very compact as about 134 μm2. Therefore, the proposed optical filter is highly suitable for photonic integrated circuits and lightwave communication systems.
{"title":"Deep Learning Based Inverse Design of Nanoscale Optical Bandpass Filter for Sub-THz 6G Network","authors":"P. Agilandeswari;G. Thavasi Raja;R. Rajasekar","doi":"10.1109/TNANO.2025.3584854","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584854","url":null,"abstract":"In this paper, the novel deep learning-based nano scale optical filter is designed with narrow bandwidth for 6G network and Dense Wavelength Division Multiplexing (DWDM) systems. The hybrid Long Short-Term Memory Neural Network (LSTM-NN)-transformer based deep learning algorithm is implemented to accurately predict the structural parameter of the optical bandpass filter. The inverse design approach-based hybrid deep learning model is designed to improve the performance of the optical bandpass filter. The photonic filter performance parameters are numerically analyzed by Finite Difference Time Domain (FDTD) method. The proposed hybrid model is designed with very low mean square error of 5.4207 × 10<sup>−8</sup> and less computation time of 834.81 seconds. The presented photonics platform is designed with narrow bandwidth of 1.12 THz and footprint is very compact as about 134 μm<sup>2</sup>. Therefore, the proposed optical filter is highly suitable for photonic integrated circuits and lightwave communication systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"347-355"},"PeriodicalIF":2.1,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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