Pub Date : 2024-07-31DOI: 10.1109/TNANO.2024.3436014
Avinash Lahgere;Alok Kumar Kamal;Rishu Kumar
In this article, we have reported a tunnel field-effect transistor (TFET) based unified random access memory (T-URAM), integrating nonvolatile memory (NVM) and single transistor (1T) DRAM into a single TFET device. Unlike previously published URAMs, the proposed T-URAM utilizes band-to-band tunneling (BTBT) conduction for programming both NVM and 1T DRAM. This approach offers two main advantages: low supply voltage requirements and disturbance-free NVM operation. Additionally, T-URAM ensures interference-free memory operation through separate gates for NVM and 1T DRAM. Simulations show that T-URAM requires 1.5× to 4.5× less supply voltage compared to existing URAMs. At 358 K, the retention time (RT) of T-URAM in 1T DRAM mode is 500 ms, which is $sim$ 62.5× and $sim$ 7.8× higher than the buried n-well bulk FinFET URAM and ITRS prediction, respectively. For NVM mode, the RT at a gate length of 50 nm matches that of previously reported URAMs. The sense margin of T-URAM in 1T DRAM mode at 358 K is about 1.9 $mu$ A/ $mu$ m, which is roughly 7.6× higher than TFT-based URAM. We also propose a 2x2 crossbar memory array implementation using T-URAM. These findings pave the way for designing low-power, multi-purpose embedded memory for future applications.
{"title":"Band-to-Band Tunneling Based Unified RAM (URAM) for Low Power Embedded Applications","authors":"Avinash Lahgere;Alok Kumar Kamal;Rishu Kumar","doi":"10.1109/TNANO.2024.3436014","DOIUrl":"10.1109/TNANO.2024.3436014","url":null,"abstract":"In this article, we have reported a tunnel field-effect transistor (TFET) based unified random access memory (T-URAM), integrating nonvolatile memory (NVM) and single transistor (1T) DRAM into a single TFET device. Unlike previously published URAMs, the proposed T-URAM utilizes band-to-band tunneling (BTBT) conduction for programming both NVM and 1T DRAM. This approach offers two main advantages: low supply voltage requirements and disturbance-free NVM operation. Additionally, T-URAM ensures interference-free memory operation through separate gates for NVM and 1T DRAM. Simulations show that T-URAM requires 1.5× to 4.5× less supply voltage compared to existing URAMs. At 358 K, the retention time (RT) of T-URAM in 1T DRAM mode is 500 ms, which is \u0000<inline-formula><tex-math>$sim$</tex-math></inline-formula>\u0000 62.5× and \u0000<inline-formula><tex-math>$sim$</tex-math></inline-formula>\u0000 7.8× higher than the buried n-well bulk FinFET URAM and ITRS prediction, respectively. For NVM mode, the RT at a gate length of 50 nm matches that of previously reported URAMs. The sense margin of T-URAM in 1T DRAM mode at 358 K is about 1.9 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000A/\u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m, which is roughly 7.6× higher than TFT-based URAM. We also propose a 2x2 crossbar memory array implementation using T-URAM. These findings pave the way for designing low-power, multi-purpose embedded memory for future applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"629-635"},"PeriodicalIF":2.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electrochemical biosensors often encounter inaccuracies and unreliability in measurements due to non-ideal effects such as drift and hysteresis. This study presents an innovative back-end calibration circuit specifically designed to mitigate hysteresis and drift effects in potentiometric ruthenium dioxide (RuO 2 ) dopamine biosensors. The proposed calibration circuit combines analog circuitry with a microcontroller, employing gain-configured inverting amplifiers to individually correct hysteresis effects induced by both low and high dopamine concentrations. Furthermore, an inverse drift signal is applied to counteract overall drift effects, significantly improving the precision of dopamine measurements. The biosensor utilizes a radiofrequency sputtering system to deposit RuO 2 as a sensing membrane. A sequential drop-casting process is employed to add functional layers. Atomic force microscopy is utilized to characterize the surface morphology of the RuO 2 sensing membrane, confirming its uniform pattern and exceptional flatness. Reproducibility and repeatability experiments validate the stability and consistency of the fabricated RuO 2 dopamine biosensor, underscoring its potential for practical applications in the diagnosis of neurological disorders.
{"title":"The Back-End Calibration Circuit for Reducing Hysteresis and Drift Effects of the Potentiometric RuO2 Dopamine Biosensor","authors":"Po-Yu Kuo;Ming-Tai Hsu;Jung-Chuan Chou;Chih-Hsien Lai;Yu-Hsun Nien;Po-Hui Yang;Chi-Han Liao;Wei-Shun Chen;Jyun-Ming Huang","doi":"10.1109/TNANO.2024.3435447","DOIUrl":"10.1109/TNANO.2024.3435447","url":null,"abstract":"Electrochemical biosensors often encounter inaccuracies and unreliability in measurements due to non-ideal effects such as drift and hysteresis. This study presents an innovative back-end calibration circuit specifically designed to mitigate hysteresis and drift effects in potentiometric ruthenium dioxide (RuO\u0000<sub>2</sub>\u0000) dopamine biosensors. The proposed calibration circuit combines analog circuitry with a microcontroller, employing gain-configured inverting amplifiers to individually correct hysteresis effects induced by both low and high dopamine concentrations. Furthermore, an inverse drift signal is applied to counteract overall drift effects, significantly improving the precision of dopamine measurements. The biosensor utilizes a radiofrequency sputtering system to deposit RuO\u0000<sub>2</sub>\u0000 as a sensing membrane. A sequential drop-casting process is employed to add functional layers. Atomic force microscopy is utilized to characterize the surface morphology of the RuO\u0000<sub>2</sub>\u0000 sensing membrane, confirming its uniform pattern and exceptional flatness. Reproducibility and repeatability experiments validate the stability and consistency of the fabricated RuO\u0000<sub>2</sub>\u0000 dopamine biosensor, underscoring its potential for practical applications in the diagnosis of neurological disorders.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"578-583"},"PeriodicalIF":2.1,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/TNANO.2024.3430221
Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan
The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area $(sim!! 50,{bm{mu}}{{mathbf{m}}^2},text{vs}{rm{.}},sim 40000,{bm{mu}}{{mathbf{m}}^2})$ , while achieving a similar figure of merit $mathbf{FO}{{mathbf{M}}_2}$ (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.
{"title":"Toward a GHz-Frequency BEOL Ferroelectric Negative-Capacitance Oscillator With a Wide Tuning Range","authors":"Ji Kai Wang;Collin VanEssen;Nuoyi Yang;Zhi Cheng Yuan;Prasad S. Gudem;Diego Kienle;Mani Vaidyanathan","doi":"10.1109/TNANO.2024.3430221","DOIUrl":"10.1109/TNANO.2024.3430221","url":null,"abstract":"The potential to utilize negative-capacitance dynamics in a ferroelectric capacitor as a back-end-of-line (BEOL) element to construct a tuned oscillator operating in the GHz range is proposed and investigated. Using tools established in the field of non-linear dynamics, the operating principles of the circuit are rigorously explored, a criterion for oscillation is developed, and amplitude and frequency control are investigated. Furthermore, this novel architecture is compared with a traditional LC oscillator. Through the comparison, we find that the FE oscillator can provide a substantially larger tuning range (149%, between 1.29 GHz–8.75 GHz, vs. 50% achieved by the traditional LC oscillator) and requires a vastly lower on-chip area \u0000<inline-formula><tex-math>$(sim!! 50,{bm{mu}}{{mathbf{m}}^2},text{vs}{rm{.}},sim 40000,{bm{mu}}{{mathbf{m}}^2})$</tex-math></inline-formula>\u0000, while achieving a similar figure of merit \u0000<inline-formula><tex-math>$mathbf{FO}{{mathbf{M}}_2}$</tex-math></inline-formula>\u0000 (reduced by only 6 dB). Such improvements motivate the continued exploration and development of negative-capacitance ferroelectrics as BEOL elements that can significantly improve integrated-circuit performance.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"591-599"},"PeriodicalIF":2.1,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141745153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1109/TNANO.2024.3421334
Kamal Solanki;Swati Verma;Pankaj Kumar Das;P.P. Paltani;Manoj Kumar Majumder
Elevated levels of nitrogen dioxide (NO 2 ) pollutants have captured significant attention due to their profound influence on the cardiovascular and respiratory systems; hence, high-performance monitoring systems for pollutants are imperative to safeguard the well-being of individuals. In this regard, a hydrogen-passivated two-probe Armchair Graphene Nanoribbon (ArGNR) gas sensor utilizing a doped/undoped configuration can be considered to mitigate the NO 2 pollutants. Therefore, this research, for the first time, examines the influence of channel length and transport properties on the i-v behavior of NO 2 pollutants for doped/undoped ArGNR-based sensors. The electronic properties are rigorously examined using the density function theory (DFT) within the linear combination of atomic orbital (LCAO) and semi-empirical computation techniques, leveraging principles derived from non-equilibrium Green's function. In comparison to the undoped ArGNR, the BAs doped ArGNR exhibits superior chemisorption energy of −2.3 eV (with spin effect) and −3.3 eV (without spin effect), coupled with the substantial bandgap variation of −10.22, 36.50% (with spin effect) and 100% (without spin effect), at the B and As sites, respectively. In addition, a high quantum transport spectrum of 57% and significant current variations of 95% and 77% at the B and As sites, respectively, upon the NO 2 adsorption. These findings suggest that the B-As-doped ArGNR sensor provides a promising solution for susceptible NO 2 detection.
由于二氧化氮（NO2）污染物对心血管和呼吸系统的深远影响，其浓度水平的升高已引起人们的极大关注；因此，高性能的污染物监测系统对保障个人健康至关重要。在这方面，可以考虑利用掺杂/未掺杂配置的氢钝化双探针臂章石墨烯纳米带（ArGNR）气体传感器来缓解二氧化氮污染物。因此，本研究首次考察了基于掺杂/未掺杂 ArGNR 的传感器的沟道长度和传输特性对 NO2 污染物的 iv 行为的影响。利用原子轨道线性组合（LCAO）和半经验计算技术中的密度函数理论（DFT），以及从非平衡格林函数中得出的原理，对电子特性进行了严格研究。与未掺杂的 ArGNR 相比，掺杂 BAs 的 ArGNR 表现出更高的化学吸附能，分别为 -2.3 eV（有自旋效应）和 -3.3 eV（无自旋效应），同时在 B 和 As 位点的带隙变化也很大，分别为 -10.22、36.50%（有自旋效应）和 100%（无自旋效应）。此外，在吸附二氧化氮时，B 和 As 位点的量子传输谱高达 57%，电流变化显著，分别为 95% 和 77%。这些发现表明，掺杂 B-As 的 ArGNR 传感器为易受影响的二氧化氮检测提供了一种前景广阔的解决方案。
{"title":"Ab Initio Modeling of Doped/Undoped ArGNR Sensors for No2 Detection","authors":"Kamal Solanki;Swati Verma;Pankaj Kumar Das;P.P. Paltani;Manoj Kumar Majumder","doi":"10.1109/TNANO.2024.3421334","DOIUrl":"10.1109/TNANO.2024.3421334","url":null,"abstract":"Elevated levels of nitrogen dioxide (NO\u0000<sub>2</sub>\u0000) pollutants have captured significant attention due to their profound influence on the cardiovascular and respiratory systems; hence, high-performance monitoring systems for pollutants are imperative to safeguard the well-being of individuals. In this regard, a hydrogen-passivated two-probe Armchair Graphene Nanoribbon (ArGNR) gas sensor utilizing a doped/undoped configuration can be considered to mitigate the NO\u0000<sub>2</sub>\u0000 pollutants. Therefore, this research, for the first time, examines the influence of channel length and transport properties on the \u0000<italic>i-v</i>\u0000 behavior of NO\u0000<sub>2</sub>\u0000 pollutants for doped/undoped ArGNR-based sensors. The electronic properties are rigorously examined using the density function theory (DFT) within the linear combination of atomic orbital (LCAO) and semi-empirical computation techniques, leveraging principles derived from non-equilibrium Green's function. In comparison to the undoped ArGNR, the BAs doped ArGNR exhibits superior chemisorption energy of −2.3 eV (with spin effect) and −3.3 eV (without spin effect), coupled with the substantial bandgap variation of −10.22, 36.50% (with spin effect) and 100% (without spin effect), at the \u0000<italic>B</i>\u0000 and \u0000<italic>As</i>\u0000 sites, respectively. In addition, a high quantum transport spectrum of 57% and significant current variations of 95% and 77% at the \u0000<italic>B</i>\u0000 and \u0000<italic>As</i>\u0000 sites, respectively, upon the NO\u0000<sub>2</sub>\u0000 adsorption. These findings suggest that the B-As-doped ArGNR sensor provides a promising solution for susceptible NO\u0000<sub>2</sub>\u0000 detection.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"567-577"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1109/TNANO.2024.3421315
G.P.S. Prashanthi;Umakanta Nanda
Perovskite solar cells (PSCs) are a novel emerging technology that are the third generation of solar cells, following wafer-based and thin-film-based predecessors. Solar photovoltaic (PV) technology that uses perovskite materials has a significant advantage over conventional solar PV, as it can respond to various light wavelengths and increase the amount of sunlight converted to electricity. In addition, PSCs are flexible, semi-transparent, customizable, lightweight, and have a high power conversion efficiency (PCE). Through the use of dual-graded light absorber/active layers, and double perovskite lead-free material Cs $_{2}$ BiAgI $_{6}$ , this study seeks to increase the efficiency of PSCs. A unique device structure (ITO/ZnO/Double Perovskite Cs $_{2}$ BiAgI $_{6}$ /CIGS/High purity Spiro-OMeTAD/Au) of lead-free double perovskite material-based solar cell has been simulated using the SCAPS-1D one-dimensional solar cell capacitance simulator. The optimized solar cell output parameters achieved in this work include voltage in an open circuit (Voc) of 1.2258 V, current density in a short circuit (Jsc) of 34.292 mA/cm $^{2}$ , fill factor (FF) of 85.95 $%$ , and power conversion efficiency (PCE) of 36.13 $%$ , which gets close to the single-junction PSCs' Shockley-Queisser Efficiency (SQ) limit.
{"title":"Highly Efficient (>36%) Lead-Free Cs2BiAgI6/CIGS Based Double Perovskite Solar Cell (DPSC) With Dual-Graded Light Absorber Layers for Next Generation Photovoltaic (PV) Technologies","authors":"G.P.S. Prashanthi;Umakanta Nanda","doi":"10.1109/TNANO.2024.3421315","DOIUrl":"10.1109/TNANO.2024.3421315","url":null,"abstract":"Perovskite solar cells (PSCs) are a novel emerging technology that are the third generation of solar cells, following wafer-based and thin-film-based predecessors. Solar photovoltaic (PV) technology that uses perovskite materials has a significant advantage over conventional solar PV, as it can respond to various light wavelengths and increase the amount of sunlight converted to electricity. In addition, PSCs are flexible, semi-transparent, customizable, lightweight, and have a high power conversion efficiency (PCE). Through the use of dual-graded light absorber/active layers, and double perovskite lead-free material Cs\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000BiAgI\u0000<inline-formula><tex-math>$_{6}$</tex-math></inline-formula>\u0000, this study seeks to increase the efficiency of PSCs. A unique device structure (ITO/ZnO/Double Perovskite Cs\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000BiAgI\u0000<inline-formula><tex-math>$_{6}$</tex-math></inline-formula>\u0000/CIGS/High purity Spiro-OMeTAD/Au) of lead-free double perovskite material-based solar cell has been simulated using the SCAPS-1D one-dimensional solar cell capacitance simulator. The optimized solar cell output parameters achieved in this work include voltage in an open circuit (Voc) of 1.2258 V, current density in a short circuit (Jsc) of 34.292 mA/cm\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000, fill factor (FF) of 85.95\u0000<inline-formula><tex-math>$%$</tex-math></inline-formula>\u0000, and power conversion efficiency (PCE) of 36.13\u0000<inline-formula><tex-math>$%$</tex-math></inline-formula>\u0000, which gets close to the single-junction PSCs' Shockley-Queisser Efficiency (SQ) limit.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"554-561"},"PeriodicalIF":2.1,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/TNANO.2024.3421263
Been Kwak;Daewoong Kwon;Hyunwoo Kim
This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage ( V TH ). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current (I SC ), 2) channel-to-drain currents ( I CD ), and 3) I SC and I CD . Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.
{"title":"Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor","authors":"Been Kwak;Daewoong Kwon;Hyunwoo Kim","doi":"10.1109/TNANO.2024.3421263","DOIUrl":"10.1109/TNANO.2024.3421263","url":null,"abstract":"This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage (\u0000<italic>V</i>\u0000<sub>TH</sub>\u0000). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current \u0000<italic>(I</i>\u0000<sub>SC</sub>\u0000), 2) channel-to-drain currents (\u0000<italic>I</i>\u0000<sub>CD</sub>\u0000), and 3) \u0000<italic>I</i>\u0000<sub>SC</sub>\u0000 and \u0000<italic>I</i>\u0000<sub>CD</sub>\u0000. Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"562-566"},"PeriodicalIF":2.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-28DOI: 10.1109/TNANO.2024.3420249
Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro
This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.
{"title":"Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study","authors":"Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro","doi":"10.1109/TNANO.2024.3420249","DOIUrl":"10.1109/TNANO.2024.3420249","url":null,"abstract":"This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"549-553"},"PeriodicalIF":2.1,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-19DOI: 10.1109/TNANO.2024.3416509
Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou
Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.
机器视觉作为人工智能的重要组成部分，在尺寸测量、质量控制、自动驾驶等方面具有重要影响。本研究提出了一种由氮化镓（GaN）纳米线（NW）n-i-n 光电探测器（PD）实现的高性能紫外线（UV）成像和检测系统。基于氮化镓纳米线的最高光电特性，包括 5098 A/W 的高响应率、4.88 pA 的低暗电流和 1223 的光暗电流比，由氮化镓纳米线阵列组成的机器视觉系统可实现 96.21% 的精确度。此外，还讨论了人工神经网络（ANN）和卷积神经网络（CNN）在这种机器视觉系统中的可行性。可视化过程表明，在图像识别方面，CNN 优于 ANN 的原因在于其提取空间信息和特征的能力。这些研究成果为基于氮化镓氮化瓦 PD 的机器视觉系统的传感器和算法的开发提供了重要启示，激发了对紫外图像检测和其他人工智能领域的进一步研究。
{"title":"GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System","authors":"Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou","doi":"10.1109/TNANO.2024.3416509","DOIUrl":"10.1109/TNANO.2024.3416509","url":null,"abstract":"Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"529-534"},"PeriodicalIF":2.1,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The molecular Field-Coupled Nanocomputing (molFCN) paradigm encodes digital information in the charge distribution of molecules. The information propagates through electrostatic coupling within molecules, permitting minimal power consumption. Although the promising results in the design of molFCN circuits, a prototype is missing. Therefore, this work moves toward molFCN fabrication by presenting a methodology combining Finite Element Modelling with the SCERPA tool, boosting the simulation accuracy by considering both molecule and device physics. First, this work analyzes nano-trench-based molFCN single-line wires, examining information propagation dependencies on the nano-trench geometries. Then, the analysis of nano-trench-based multi-line wires points out the primary prototype specification to achieve this advantageous molFCN solution. Finally, we demonstrate the nano-trench as a valuable solution to achieve the write-in mechanism. Overall, this paper paves the way for molFCN fabrication-aware simulations for future prototyping.
{"title":"Technology-Aware Simulation for Prototyping Molecular Field-Coupled Nanocomputing","authors":"Federico Ravera;Yuri Ardesi;Gianluca Piccinini;Mariagrazia Graziano","doi":"10.1109/TNANO.2024.3415790","DOIUrl":"10.1109/TNANO.2024.3415790","url":null,"abstract":"The molecular Field-Coupled Nanocomputing (molFCN) paradigm encodes digital information in the charge distribution of molecules. The information propagates through electrostatic coupling within molecules, permitting minimal power consumption. Although the promising results in the design of molFCN circuits, a prototype is missing. Therefore, this work moves toward molFCN fabrication by presenting a methodology combining Finite Element Modelling with the SCERPA tool, boosting the simulation accuracy by considering both molecule and device physics. First, this work analyzes nano-trench-based molFCN single-line wires, examining information propagation dependencies on the nano-trench geometries. Then, the analysis of nano-trench-based multi-line wires points out the primary prototype specification to achieve this advantageous molFCN solution. Finally, we demonstrate the nano-trench as a valuable solution to achieve the write-in mechanism. Overall, this paper paves the way for molFCN fabrication-aware simulations for future prototyping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"521-528"},"PeriodicalIF":2.1,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10561616","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1109/TNANO.2024.3415382
Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell
Hardware neural networks (HNNs) based on crossbar arrays are expected to be energy-efficient computing architectures for solving complex tasks due to their small feature sizes. Although there exist software libraries able to deal with circuit simulation of memristor networks, they still exceed the memory available of any consumer grade GPU's VRAM for large scale crossbar arrays while having a significant computational complexity. This work discusses an iterative method to implement a fast simulation of the corresponding memristor crossbar array with much more limited memory use.
{"title":"Memristor Crossbar Array Simulation for Deep Learning Applications","authors":"Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell","doi":"10.1109/TNANO.2024.3415382","DOIUrl":"10.1109/TNANO.2024.3415382","url":null,"abstract":"Hardware neural networks (HNNs) based on crossbar arrays are expected to be energy-efficient computing architectures for solving complex tasks due to their small feature sizes. Although there exist software libraries able to deal with circuit simulation of memristor networks, they still exceed the memory available of any consumer grade GPU's VRAM for large scale crossbar arrays while having a significant computational complexity. This work discusses an iterative method to implement a fast simulation of the corresponding memristor crossbar array with much more limited memory use.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"512-515"},"PeriodicalIF":2.1,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10559273","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141516961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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