Pub Date : 2024-12-25DOI: 10.1109/TNANO.2024.3522368
Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T
This study investigates the enhancement of hydrogen (H 2 ) gas sensing in nitrogen-doped Zinc Oxide (ZnO) nanomaterials through the decoration of gold (Au) nanoparticles. ZnO nanoparticles were synthesized via a wet chemical method, doped with nitrogen at 0.5%, 1.0%, and 1.5% concentrations, and decorated with Au nanoparticles. Characterization using X-ray diffraction (XRD) revealed that the ZnO structure remained intact, with the addition of a peak corresponding to Au at 38.19°. Transmission electron microscopy (TEM) confirmed the uniform distribution of spherical Au nanoparticles on the ZnO surfaces. UV-Vis spectroscopy showed an enhanced absorption peak at 532 nm due to surface plasmon resonance. Photoluminescence (PL) spectra indicated reduced emission intensity, suggesting effective charge transfer between ZnO and Au. Gas sensing tests revealed that Au-decorated 1.0 wt. % N exhibited a maximum H 2 gas response of 89% at 200 °C, significantly higher than the 46% response of non-decorated 1.0 wt. % N. Additionally, the Au-decorated N sensors demonstrated a rapid response time of 10 sec and a recovery time of 15 sec. These results highlight the potential of Au-decorated N-doped nanomaterials as highly efficient H 2 gas sensors, combining enhanced sensitivity with fast response kinetics.
{"title":"Enhanced Hydrogen Gas Sensing Performance of Gold Nanoparticle Decorated Nitrogen-Doped ZnO Nanomaterials for Improved Sensitivity and Rapid Response","authors":"Sanjana Devi VS;Balraj B;Amuthameena S;Joby Titus T","doi":"10.1109/TNANO.2024.3522368","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3522368","url":null,"abstract":"This study investigates the enhancement of hydrogen (H\u0000<sub>2</sub>\u0000) gas sensing in nitrogen-doped Zinc Oxide (ZnO) nanomaterials through the decoration of gold (Au) nanoparticles. ZnO nanoparticles were synthesized via a wet chemical method, doped with nitrogen at 0.5%, 1.0%, and 1.5% concentrations, and decorated with Au nanoparticles. Characterization using X-ray diffraction (XRD) revealed that the ZnO structure remained intact, with the addition of a peak corresponding to Au at 38.19°. Transmission electron microscopy (TEM) confirmed the uniform distribution of spherical Au nanoparticles on the ZnO surfaces. UV-Vis spectroscopy showed an enhanced absorption peak at 532 nm due to surface plasmon resonance. Photoluminescence (PL) spectra indicated reduced emission intensity, suggesting effective charge transfer between ZnO and Au. Gas sensing tests revealed that Au-decorated 1.0 wt. % N exhibited a maximum H\u0000<sub>2</sub>\u0000 gas response of 89% at 200 °C, significantly higher than the 46% response of non-decorated 1.0 wt. % N. Additionally, the Au-decorated N sensors demonstrated a rapid response time of 10 sec and a recovery time of 15 sec. These results highlight the potential of Au-decorated N-doped nanomaterials as highly efficient H\u0000<sub>2</sub>\u0000 gas sensors, combining enhanced sensitivity with fast response kinetics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"27-33"},"PeriodicalIF":2.1,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-13DOI: 10.1109/TNANO.2024.3517161
Valeriy A. Slipko;Yuriy V. Pershin
This theoretical study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of resistance-switching material sandwiched between two metal electrodes. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.
{"title":"Reduction of Joule Losses in Memristive Switching Using Optimal Control","authors":"Valeriy A. Slipko;Yuriy V. Pershin","doi":"10.1109/TNANO.2024.3517161","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3517161","url":null,"abstract":"This theoretical study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of resistance-switching material sandwiched between two metal electrodes. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"8-16"},"PeriodicalIF":2.1,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents an electronically tunable metasurface wideband absorber with a graphene-based unit cell designed for the lower terahertz (0.1 THz– 10 THz) region. Surface plasmonics and the controllable conductance of graphene make it ideal for this purpose. Dual wideband absorption ( $ >$ 90% absorptivity) was observed from 0.682 to 1.798 THz (90% fractional bandwidth) and 4.187 to 4.947 THz (16% fractional bandwidth). The absorber is insensitive to polarizations and oblique incidences up to 45°. The unit cell comprises a double elliptical-cross graphene monolayer on a polyimide substrate (dielectric constant: 3.5, loss tangent: 0.0024) backed by an ultra-thin gold layer. Plasmonic resonance, introduced by four semicircular slots, causes absorption from 4.15 to 4.95 THz. Absorption properties were verified through a transmission line model and finite element method (FEM) simulations. Tunability is investigated via gating potential, carrier relaxation time, and Fermi energy variations.
{"title":"Polarization Insensitive Graphene Based Tunable Metasurface Terahertz Dual-Band Absorber","authors":"Niten Kumar Panda;Sraddhanjali Mohapatra;Sudhakar Sahu","doi":"10.1109/TNANO.2024.3515459","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3515459","url":null,"abstract":"This article presents an electronically tunable metasurface wideband absorber with a graphene-based unit cell designed for the lower terahertz (0.1 THz– 10 THz) region. Surface plasmonics and the controllable conductance of graphene make it ideal for this purpose. Dual wideband absorption (\u0000<inline-formula><tex-math>$ >$</tex-math></inline-formula>\u000090% absorptivity) was observed from 0.682 to 1.798 THz (90% fractional bandwidth) and 4.187 to 4.947 THz (16% fractional bandwidth). The absorber is insensitive to polarizations and oblique incidences up to 45°. The unit cell comprises a double elliptical-cross graphene monolayer on a polyimide substrate (dielectric constant: 3.5, loss tangent: 0.0024) backed by an ultra-thin gold layer. Plasmonic resonance, introduced by four semicircular slots, causes absorption from 4.15 to 4.95 THz. Absorption properties were verified through a transmission line model and finite element method (FEM) simulations. Tunability is investigated via gating potential, carrier relaxation time, and Fermi energy variations.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"34-41"},"PeriodicalIF":2.1,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, a cost-effective technique for the synthesis of gamma iron oxide nanoparticles has been proposed for intelligent maghemite electrode applications pitched in the context of smart and efficient energy storage solution. A facile process-optimized technique for synthesis of gamma iron oxide nanoparticles has been designed in order to investigate the optimum temperature, doping and pH of the sodium hydroxide. By dint of morphological investigation, it has been established that the samples have high surface area, crystalline structure, and size in the range of fifty to hundred angstrom. The linearity of the magnetization feature coupled with its doping sensitivity points towards its usage for state estimation technology of the energy storage device management. The nano-scaled samples witness an increase of 75%–110% in the direct bandgap in comparison to its bulk existence. This band gap modulation establishes that the conductivity can be improved for electrode application by doping. High surface area for the active material ingredient nano-particles has also been confirmed by BET surface area of up to 75 m 2 /g. Thermal analyses of the samples establish the fidelity of the samples’ constitution over a desirably wide temperature range. The cost-effectiveness of gamma-iron oxide batteries will be a crucial factor for faster adoption of indigenous renewable energy storage solutions.
{"title":"Iron-Ion Nanoparticles for Smart and Cost-Effective Energy Storage Cell Electrode Integration Using Novel Nano-Sedimentation Method","authors":"Himanshu Priyadarshi;Ashish Shrivastava;Dhaneshwar Mishra;Kulwant Singh","doi":"10.1109/TNANO.2024.3510757","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3510757","url":null,"abstract":"In this article, a cost-effective technique for the synthesis of gamma iron oxide nanoparticles has been proposed for intelligent maghemite electrode applications pitched in the context of smart and efficient energy storage solution. A facile process-optimized technique for synthesis of gamma iron oxide nanoparticles has been designed in order to investigate the optimum temperature, doping and pH of the sodium hydroxide. By dint of morphological investigation, it has been established that the samples have high surface area, crystalline structure, and size in the range of fifty to hundred angstrom. The linearity of the magnetization feature coupled with its doping sensitivity points towards its usage for state estimation technology of the energy storage device management. The nano-scaled samples witness an increase of 75%–110% in the direct bandgap in comparison to its bulk existence. This band gap modulation establishes that the conductivity can be improved for electrode application by doping. High surface area for the active material ingredient nano-particles has also been confirmed by BET surface area of up to 75 m\u0000<sup>2</sup>\u0000/g. Thermal analyses of the samples establish the fidelity of the samples’ constitution over a desirably wide temperature range. The cost-effectiveness of gamma-iron oxide batteries will be a crucial factor for faster adoption of indigenous renewable energy storage solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"17-26"},"PeriodicalIF":2.1,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A label-free platform based on integration of cantilever and photonic crystal cavity resonator is reported with both high sensitivity and ultra-high quality factor for femto-gram detection of chemicals. The proposed chemical sensor shows sharp resonant frequency with quality factor of 12800, displacement and wavelength shift is obtained as 29.9425 μm and 7.15625 nm with chemical weight of 100 fg. The proposed sensor shows a high confinement factor of 62%, with an average sensitivity of 1.62 nm/fg manifested its promising applications for detection of various virus present in chemicals. The device shows capability to work in various fluids for chemical sensing purposes.
{"title":"Ultra-High Quality Factor NOMS Device Incorporating Photonic Crystal Cavity for Femto-Gram Sensing","authors":"Saurabh Agarwal;Kurmendra;Chandra Prakash;Sumar Kumar Mitra;Amitesh Kumar","doi":"10.1109/TNANO.2024.3509444","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3509444","url":null,"abstract":"A label-free platform based on integration of cantilever and photonic crystal cavity resonator is reported with both high sensitivity and ultra-high quality factor for femto-gram detection of chemicals. The proposed chemical sensor shows sharp resonant frequency with quality factor of 12800, displacement and wavelength shift is obtained as 29.9425 μm and 7.15625 nm with chemical weight of 100 fg. The proposed sensor shows a high confinement factor of 62%, with an average sensitivity of 1.62 nm/fg manifested its promising applications for detection of various virus present in chemicals. The device shows capability to work in various fluids for chemical sensing purposes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"1-7"},"PeriodicalIF":2.1,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/TNANO.2024.3505985
Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu
In this paper, a novel tunneling-drift-diffusion field-effect transistor (TDDFET) is introduced with dual-doped source and asymmetric gates. In the TDDFET, the current is conducted by two mechanisms, namely the band-to-band tunneling and drift-diffusion, making the device can present an additional state between the on and off states, and very suitable for the ternary logic design. Additionally, a standard ternary inverter (STI) is also implemented based on the TDDFET and studied in detail by the aid of TCAD simulation. It turns out that the supply voltage VDD shows significant influence on the ternary inverter and the optimized value is about 3Vturn/2 in which Vturn is the transition voltage on the transfer curve. The influence of key device parameters are also studied in detail. Compared with other ternary inverters, our designed ternary inverter requiring no any immature material, passive device and multi-valued power supply, is more friendly with the CMOS platform and can make the most of the advantages of the ternary logic.
{"title":"Demonstration of a Ternary Inverter Based on the Novel TDDFET With Dual-Doped Source and Asymmetric Gates","authors":"Bin Lu;Hua Qiang;Xiaotao Liu;Dawei Wang;Yan Cui;Zhu Li;Jiale Sun;Hongliang Lu","doi":"10.1109/TNANO.2024.3505985","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3505985","url":null,"abstract":"In this paper, a novel tunneling-drift-diffusion field-effect transistor (TDDFET) is introduced with dual-doped source and asymmetric gates. In the TDDFET, the current is conducted by two mechanisms, namely the band-to-band tunneling and drift-diffusion, making the device can present an additional state between the on and off states, and very suitable for the ternary logic design. Additionally, a standard ternary inverter (STI) is also implemented based on the TDDFET and studied in detail by the aid of TCAD simulation. It turns out that the supply voltage V<sub>DD</sub> shows significant influence on the ternary inverter and the optimized value is about 3V<sub>turn</sub>/2 in which V<sub>turn</sub> is the transition voltage on the transfer curve. The influence of key device parameters are also studied in detail. Compared with other ternary inverters, our designed ternary inverter requiring no any immature material, passive device and multi-valued power supply, is more friendly with the CMOS platform and can make the most of the advantages of the ternary logic.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"59-66"},"PeriodicalIF":2.1,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V $_text{r}$ and I $_text{r}$ ) variations. Such V $_text{r}$ and I $_text{r}$ variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).
{"title":"Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions","authors":"Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev","doi":"10.1109/TNANO.2024.3504963","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504963","url":null,"abstract":"In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000) variations. Such V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"815-821"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-22DOI: 10.1109/TNANO.2024.3504601
Banti Yadav;Pankaj Srivastava;Varun Sharma
Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the $mathbf {E-k}$ diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters $mathbf {(R_{Q}, L_{K}, C_{Q})}$ . The calculation of the transmission channels $mathbf {(N_{ch})}$ against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of $mathbf {R_{Q}}$ (6.45 Kohm), $mathbf {L_{K}}$$mathbf {(6.42nH/mu m)}$ , and $ mathbf {C_{Q}(6.16pF/cm)}$ for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.
我们采用第一原理方法，探究了用于互连应用的 n 掺杂人字形硫化锗纳米带（ZGeSNR）的电子、结构和传输特性。我们探讨了硫替代的两种可能情况，即顶边的 S 替代和底边的 S 替代。我们计算的形成能表明，掺磷（P）和掺氮（N）的 ZGeSNR 构型在热力学上都是稳定的。此外，通过 $mathbf {E-k}$ 图和 DOS 曲线计算，我们还发现掺杂结构与原始结构相比具有金属特性。最后，我们进行了基于两个探针器件模型的传输分析，对关键的小信号动态参数 $mathbf {(R_{Q}, L_{K}, C_{Q})}$ 进行了评论。然后研究了传输通道 $mathbf {(N_{ch})}$ 与可变偏置电压的关系，结果表明 $mathbf {R_{Q}}$ （6.45 Kohm）、$mathbf {L_{K}}$ $mathbf {(6.42nH/mu m)}$和$mathbf {C_{Q}(6.16pF/cm)}$ 为掺杂了 S-site-P的 ZGeSNR（底部），使其成为纳米级互连的有力竞争者。
{"title":"Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach","authors":"Banti Yadav;Pankaj Srivastava;Varun Sharma","doi":"10.1109/TNANO.2024.3504601","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504601","url":null,"abstract":"Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the \u0000<inline-formula><tex-math>$mathbf {E-k}$</tex-math></inline-formula>\u0000 diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters \u0000<inline-formula><tex-math>$mathbf {(R_{Q}, L_{K}, C_{Q})}$</tex-math></inline-formula>\u0000. The calculation of the transmission channels \u0000<inline-formula><tex-math>$mathbf {(N_{ch})}$</tex-math></inline-formula>\u0000 against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of \u0000<inline-formula><tex-math>$mathbf {R_{Q}}$</tex-math></inline-formula>\u0000 (6.45 Kohm), \u0000<inline-formula><tex-math>$mathbf {L_{K}}$</tex-math></inline-formula>\u0000 \u0000<inline-formula><tex-math>$mathbf {(6.42nH/mu m)}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$ mathbf {C_{Q}(6.16pF/cm)}$</tex-math></inline-formula>\u0000 for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"809-814"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-12DOI: 10.1109/TNANO.2024.3496487
Ariba Siddiqui;Mitradip Bhattacharjee
The growing interest in sensors and microdevices in different applications has led to the exploration of the most efficient and appropriate synthesis methods for flexible device development. In this direction, nanofibers have gained significant attention. However, in many cases, efficient and controlled transfer of nanofibers plays an important role in various device developments. In this study, thermomechanical i.e., temperature and pressure-induced transfer of poly(vinylidene fluoride) (PVDF) electrospun nanofibers on flexible poly(dimethylsiloxane) (PDMS) substrate has been explored. The average diameter of the transferred nanofibers is 169.78 nm. The d 33 of PVDF nanofibers was 25 pC/N and F(β) was found to be 80.84%. The synthesized nanofibers have effectively been transferred onto a flexible PDMS substrate with more than 92% retention of optical transparency. It is observed that the transfer of the fibers depends on the applied pressure and adhesion between the materials. Further, it was found that fully cured PDMS substrate heated at 120 °C showed better transfer efficiency (12.544%) with higher stability. The use of PVDF nanofibers along with the inherent flexibility and transparency of PDMS, renders the produced substrate highly promising for the development of low-cost, lightweight, and easily constructed flexible sensors. Moreover, the fabricated nanofibrous mat generated a maximum voltage of 2.78 V on continuous tapping.
{"title":"Highly Efficient and Controlled Thermomechanical Transfer of Electrospun PVDF Nanofiber on Flexible and Transparent PDMS Substrate","authors":"Ariba Siddiqui;Mitradip Bhattacharjee","doi":"10.1109/TNANO.2024.3496487","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3496487","url":null,"abstract":"The growing interest in sensors and microdevices in different applications has led to the exploration of the most efficient and appropriate synthesis methods for flexible device development. In this direction, nanofibers have gained significant attention. However, in many cases, efficient and controlled transfer of nanofibers plays an important role in various device developments. In this study, thermomechanical i.e., temperature and pressure-induced transfer of poly(vinylidene fluoride) (PVDF) electrospun nanofibers on flexible poly(dimethylsiloxane) (PDMS) substrate has been explored. The average diameter of the transferred nanofibers is 169.78 nm. The d\u0000<sub>33</sub>\u0000 of PVDF nanofibers was 25 pC/N and F(β) was found to be 80.84%. The synthesized nanofibers have effectively been transferred onto a flexible PDMS substrate with more than 92% retention of optical transparency. It is observed that the transfer of the fibers depends on the applied pressure and adhesion between the materials. Further, it was found that fully cured PDMS substrate heated at 120 °C showed better transfer efficiency (12.544%) with higher stability. The use of PVDF nanofibers along with the inherent flexibility and transparency of PDMS, renders the produced substrate highly promising for the development of low-cost, lightweight, and easily constructed flexible sensors. Moreover, the fabricated nanofibrous mat generated a maximum voltage of 2.78 V on continuous tapping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"786-793"},"PeriodicalIF":2.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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