Pub Date : 2025-06-18DOI: 10.1109/TNANO.2025.3580798
Subarna Datta;Barnali Ghosh;Soumyadipta Pal
This work investigates the integration of single nanowire La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca; $x$ = 0.5 for A = Sr) nano-devices via advanced nanolithography techniques for transport measurements. The comparative study of resistivity in bulk and nanowire forms highlights a significant size-dependent enhancement in transport behavior. Notably, the resistivity data for La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca; $x$ = 0.5 for A = Sr) nanowires could not be fully explained by conventional models like Mott Variable Range Hopping (VRH) model, Efros-Shklovskii (ES) localization model, adiabatic small polaron hopping (ASPH) model etc. A hybrid model incorporating fluctuation-induced tunneling and disorder-induced localization more accurately captures the resistivity variation across temperature ranges. This refined approach successfully models transport behavior, particularly in the insulating regime, validating its applicability over previous models. The study establishes a robust methodology combining precise lithographic fabrication and improved theoretical modeling, paving the way for accurate transport characterization in complex oxide nanowires.
本研究通过先进的纳米光刻技术，研究了单纳米线La$ $ {1-x}$A$ $ {x}$MnO$ $ {3}$ （A = Ca = $x$ = 0.3 & 0.5; A = Sr = $x$ = 0.5）纳米器件在输运测量中的集成。体积和纳米线形式的电阻率比较研究强调了传输行为的显着尺寸依赖性增强。值得注意的是，La$_{1-x}$A$_{x}$MnO$_{3}$ （A = Ca = $x$ = 0.3和0.5;A = Sr = $x$ = 0.5）纳米线的电阻率数据不能用Mott变范围跳变（VRH）模型、Efros-Shklovskii （ES）局部化模型、绝热小极化子跳变（ASPH）模型等传统模型完全解释。结合波动诱导隧穿和无序诱导局部化的混合模型更准确地捕获了电阻率在温度范围内的变化。这种改进的方法成功地模拟了运输行为，特别是在绝缘状态下，验证了它比以前的模型的适用性。该研究建立了一种强大的方法，结合了精确的光刻制造和改进的理论建模，为复杂氧化物纳米线的精确传输表征铺平了道路。
{"title":"Investigation of Size-Dependent Electrical Transport in Single Nanowire La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca and $x$ = 0.5 for A = Sr) Using Nanolithography-Based Device Fabrication","authors":"Subarna Datta;Barnali Ghosh;Soumyadipta Pal","doi":"10.1109/TNANO.2025.3580798","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3580798","url":null,"abstract":"This work investigates the integration of single nanowire La<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>A<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>MnO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> (<inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.3 & 0.5 for A = Ca; <inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.5 for A = Sr) nano-devices via advanced nanolithography techniques for transport measurements. The comparative study of resistivity in bulk and nanowire forms highlights a significant size-dependent enhancement in transport behavior. Notably, the resistivity data for La<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>A<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>MnO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> (<inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.3 & 0.5 for A = Ca; <inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.5 for A = Sr) nanowires could not be fully explained by conventional models like Mott Variable Range Hopping (VRH) model, Efros-Shklovskii (ES) localization model, adiabatic small polaron hopping (ASPH) model etc. A hybrid model incorporating fluctuation-induced tunneling and disorder-induced localization more accurately captures the resistivity variation across temperature ranges. This refined approach successfully models transport behavior, particularly in the insulating regime, validating its applicability over previous models. The study establishes a robust methodology combining precise lithographic fabrication and improved theoretical modeling, paving the way for accurate transport characterization in complex oxide nanowires.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"593-601"},"PeriodicalIF":2.1,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145886594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Here we propose a Cu2O-ZnO-based high-aspect ratio core-shell nanowire (with radial p-n junction) for efficient photodetection via a cost-effective fabrication route. The proposed platform exploits enhanced active depletion area offered by radial p-n junction in high aspect ratio nanowires, along with this excellent transport properties of the device. This results in superior light-matter interaction and better charge collection efficiency. The proposed device demonstrates significant improvement in responsivity via a simple fabrication approach and offers a compact and cost-effective alternative to complex, highly sensitive photodetectors. It can find applications in remote sensing, medical diagnostics barcode readers, and wireless environmental monitoring. Moreover, the enhanced light-matter interaction via the proposed approach can be useful in various other applications such as Solar Cells, Light Emitting Diodes, and Optical Modulation.
{"title":"Efficient Photodetection via High Aspect Ratio Core-Shell Nanowire Array","authors":"Vishal Kaushik;Swati Rajput;Ashavani Kumar;Mukesh Kumar","doi":"10.1109/TNANO.2025.3577930","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3577930","url":null,"abstract":"Here we propose a Cu<sub>2</sub>O-ZnO-based high-aspect ratio core-shell nanowire (with radial p-n junction) for efficient photodetection via a cost-effective fabrication route. The proposed platform exploits enhanced active depletion area offered by radial p-n junction in high aspect ratio nanowires, along with this excellent transport properties of the device. This results in superior light-matter interaction and better charge collection efficiency. The proposed device demonstrates significant improvement in responsivity via a simple fabrication approach and offers a compact and cost-effective alternative to complex, highly sensitive photodetectors. It can find applications in remote sensing, medical diagnostics barcode readers, and wireless environmental monitoring. Moreover, the enhanced light-matter interaction via the proposed approach can be useful in various other applications such as Solar Cells, Light Emitting Diodes, and Optical Modulation.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"318-322"},"PeriodicalIF":2.1,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-06DOI: 10.1109/TNANO.2025.3577501
Sampati Rao Sridhar;Medha Joshi;Brijesh Kumar
In this work, a blue narrowband photomultiplication (PM) type organic photodetector (OPD) is fabricated with ZnPc as photon field modulation layer. The photomultiplication in OPD is attributed to electron trap assisted hole injection mechanism. In PM OPD, ZnPc altered the distribution of photogenerated charge carriers within the P3HT:PCBM active layer and results in narrowband detection. This study is the first to demonstrate a narrowband PM OPD with a peak response at 480 nm, using a P3HT:PCBM active layer. The detector demonstrated a rejection ratio (EQE480 nm/EQE570 nm) of 590, and a full width half maximum (FWHM) of 67 nm with 1000 nm thick ZnPc as photon field modulation layer. As the ZnPc layer thickness is increased from 200 nm to 1500 nm, the FWHM of the detector narrowed from 175 nm to 67 nm. The demonstrated narrowband photodetector with response peak in blue region has diverse applications in communication and imaging fields.
{"title":"Blue Narrowband Photomultiplication Type Organic Photodetector Using ZnPc as Photon Field Modulation Layer","authors":"Sampati Rao Sridhar;Medha Joshi;Brijesh Kumar","doi":"10.1109/TNANO.2025.3577501","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3577501","url":null,"abstract":"In this work, a blue narrowband photomultiplication (PM) type organic photodetector (OPD) is fabricated with ZnPc as photon field modulation layer. The photomultiplication in OPD is attributed to electron trap assisted hole injection mechanism. In PM OPD, ZnPc altered the distribution of photogenerated charge carriers within the P3HT:PCBM active layer and results in narrowband detection. This study is the first to demonstrate a narrowband PM OPD with a peak response at 480 nm, using a P3HT:PCBM active layer. The detector demonstrated a rejection ratio (EQE<sub>480 nm</sub>/EQE<sub>570 nm</sub>) of 590, and a full width half maximum (FWHM) of 67 nm with 1000 nm thick ZnPc as photon field modulation layer. As the ZnPc layer thickness is increased from 200 nm to 1500 nm, the FWHM of the detector narrowed from 175 nm to 67 nm. The demonstrated narrowband photodetector with response peak in blue region has diverse applications in communication and imaging fields.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"312-317"},"PeriodicalIF":2.1,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144367000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-03DOI: 10.1109/TNANO.2025.3576246
Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury
A thermally stable ultra-broadband metasurface-based emitter comprising square-shaped Ni resonators on Si substrate was investigated. The planar multilayer metamaterial emitter exhibits high emissivity of 94% over a span of 400–8450 nm wavelength. With the optimized structural parameters, the results show the thermal emission efficiency of 93.55% and photothermal conversion efficiency of 90.5% at 900K, which determine strong solar energy absorption of the emitter cavity. However, variations in structural parameters and the angle of incidence leave a minor impact on thermal emissivity. The findings show the developed structure to be of potential in efficient solar energy utilization.
{"title":"Ni-SiO2 Cell-Assisted Thermally Stable Broadband Metamaterial Emitter","authors":"Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury","doi":"10.1109/TNANO.2025.3576246","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3576246","url":null,"abstract":"A thermally stable ultra-broadband metasurface-based emitter comprising square-shaped Ni resonators on Si substrate was investigated. The planar multilayer metamaterial emitter exhibits high emissivity of 94% over a span of 400–8450 nm wavelength. With the optimized structural parameters, the results show the thermal emission efficiency of 93.55% and photothermal conversion efficiency of 90.5% at 900K, which determine strong solar energy absorption of the emitter cavity. However, variations in structural parameters and the angle of incidence leave a minor impact on thermal emissivity. The findings show the developed structure to be of potential in efficient solar energy utilization.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"307-311"},"PeriodicalIF":2.1,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-30DOI: 10.1109/TNANO.2025.3565847
Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu
Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.
{"title":"An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy","authors":"Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu","doi":"10.1109/TNANO.2025.3565847","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565847","url":null,"abstract":"Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"264-276"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-30DOI: 10.1109/TNANO.2025.3565720
Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang
In this study, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) that utilizes the structure of a fully depleted silicon-on-insulator field-effect transistors (FDSOI FETs). In FeRFETs, the non-volatile and reconfigurable electrostatic doping facilitated by ferroelectric enables type conversion. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (>1 × 1021 ${text{cm}^{-3}}$), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field $({{E}_{text{c}}})$ is important to maximize the performance of FeRFETs.
{"title":"FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach","authors":"Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang","doi":"10.1109/TNANO.2025.3565720","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565720","url":null,"abstract":"In this study, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) that utilizes the structure of a fully depleted silicon-on-insulator field-effect transistors (FDSOI FETs). In FeRFETs, the non-volatile and reconfigurable electrostatic doping facilitated by ferroelectric enables type conversion. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (>1 × 1021 <inline-formula><tex-math>${text{cm}^{-3}}$</tex-math></inline-formula>), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field <inline-formula><tex-math>$({{E}_{text{c}}})$</tex-math></inline-formula> is important to maximize the performance of FeRFETs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"277-281"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.
{"title":"Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks","authors":"Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff","doi":"10.1109/TNANO.2025.3565887","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565887","url":null,"abstract":"Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"282-292"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-29DOI: 10.1109/TNANO.2025.3565276
Amit Verma;Reza Nekovei;Daryoush Shiri
We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the drain current is seen to decrease sharply at relatively higher gate voltages. The onset of NDR is tunable with device topology. The NDR mechanism in this work is due to the applied gate voltage, not the drain-source voltage, a feature which promises low-voltage application of this effect. The results are based on a self-consistent ensemble Monte Carlo charge-carrier transport model with an electrostatic solver that solves Gauss's law in integral form.
{"title":"Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels","authors":"Amit Verma;Reza Nekovei;Daryoush Shiri","doi":"10.1109/TNANO.2025.3565276","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565276","url":null,"abstract":"We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the drain current is seen to decrease sharply at relatively higher gate voltages. The onset of NDR is tunable with device topology. The NDR mechanism in this work is due to the applied gate voltage, not the drain-source voltage, a feature which promises low-voltage application of this effect. The results are based on a self-consistent ensemble Monte Carlo charge-carrier transport model with an electrostatic solver that solves Gauss's law in integral form.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"260-263"},"PeriodicalIF":2.1,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-17DOI: 10.1109/TNANO.2025.3561947
Madhulika Verma;Sachin Agrawal
In human being autoimmune diseases are caused by the immune system's attack on body tissues. Therefore, advanced diagnostic tools for their early and accurate detection is highly needed. This study introduces a new underlay metal strip loaded doping-less heterojunction (GaSb/Si) TFET biosensor (UMS-DL-HJ-TFETB) device with exceptional sensitivity and performance. Key design features include an underlay metal strip for improved tunnelling and the cavities are on the source region to achieve a peak drain current sensitivity of 6.7 × 10$^{10}$ at k = 12 and V$_{gs}$ = 0.45 V. With a cut-off frequency of 3.27 × 10$^{8}$ Hz and a response time of 496 ps, the proposed biosensor exhibits excellent RF performance. The device performance in detecting DNA charge densities ranging from $pm$1 × 10$^{11}$ cm$^{-2}$ to $pm$1 × 10$^{12}$ cm$^{-2}$ has also been studied. In addition, five non-uniform distributions which is caused by the steric hindrance effect have been optimized. A comparative analysis is also done for fair evaluation. The simulation results show that the proposed biosensor addresses the limitations of conventional methods, providing high sensitivity, rapid detection and reliable diagnostic accuracy for autoimmune diseases.
{"title":"A Novel Underlay Metal Strip Loaded Doping-Less Heterojunction (GaSb/Si) TFET Biosensor for Autoimmune Disease Detection","authors":"Madhulika Verma;Sachin Agrawal","doi":"10.1109/TNANO.2025.3561947","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3561947","url":null,"abstract":"In human being autoimmune diseases are caused by the immune system's attack on body tissues. Therefore, advanced diagnostic tools for their early and accurate detection is highly needed. This study introduces a new underlay metal strip loaded doping-less heterojunction (GaSb/Si) TFET biosensor (UMS-DL-HJ-TFETB) device with exceptional sensitivity and performance. Key design features include an underlay metal strip for improved tunnelling and the cavities are on the source region to achieve a peak drain current sensitivity of 6.7 × 10<inline-formula><tex-math>$^{10}$</tex-math></inline-formula> at k = 12 and V<inline-formula><tex-math>$_{gs}$</tex-math></inline-formula> = 0.45 V. With a cut-off frequency of 3.27 × 10<inline-formula><tex-math>$^{8}$</tex-math></inline-formula> Hz and a response time of 496 ps, the proposed biosensor exhibits excellent RF performance. The device performance in detecting DNA charge densities ranging from <inline-formula><tex-math>$pm$</tex-math></inline-formula>1 × 10<inline-formula><tex-math>$^{11}$</tex-math></inline-formula> cm<inline-formula><tex-math>$^{-2}$</tex-math></inline-formula> to <inline-formula><tex-math>$pm$</tex-math></inline-formula>1 × 10<inline-formula><tex-math>$^{12}$</tex-math></inline-formula> cm<inline-formula><tex-math>$^{-2}$</tex-math></inline-formula> has also been studied. In addition, five non-uniform distributions which is caused by the steric hindrance effect have been optimized. A comparative analysis is also done for fair evaluation. The simulation results show that the proposed biosensor addresses the limitations of conventional methods, providing high sensitivity, rapid detection and reliable diagnostic accuracy for autoimmune diseases.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"239-248"},"PeriodicalIF":2.1,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-15DOI: 10.1109/TNANO.2025.3560912
Bipul Boro;Rushik Parmar;Gaurav Trivedi
Artificial Intelligence (AI) has advanced to the stage where modern problems can be transformed into AI problems with computational costs. Increased complexity has exponentially raised computation and inference demands, primarily due to Von Neumann architecture limitations. In-memory computing (IMC) revolutionizes this paradigm by eliminating memory read-write overheads. Notably, the utilization of Resistive Random Access Memory (RRAM) in vector-matrix multiplication (VMM) configurations within IMC architectures has demonstrated substantial performance enhancements. In the proposed work, utilizing Digital-to-Time Converters (DTCs) and Time-to-Digital Converters (TDCs) optimizes hardware resources substantially within in-memory computing (IMC) architectures. Our proposed DTC and TDC blocks exhibit power consumptions of $41 mu text{W}$ and $38 mu text{W}$ and delays of $896 text{ps}$ and $530 text{ps}$. Additionally, we introduce a $4T-1R$ structure with Reset Stop Block (RSB) that facilitates 2-bit RRAM reprogramming and entails a latency of $1.07 mu text{s}$ and energy/cell of $0.11 text{pJ}$. The overall energy efficiency of Time-Domain VMM (TDVMM) architecture is $866.6 text{Tops/W}$, which is $1.61 times$ more efficient than contemporary TDVMMs. Furthermore, our design consistently performs with a cycle-to-cycle variability of 23%, showcasing its tolerance to variations.
人工智能（AI）已经发展到可以将现代问题转化为具有计算成本的AI问题的阶段。增加的复杂性使计算和推理需求呈指数级增长，这主要是由于冯·诺依曼架构的限制。内存计算（IMC）通过消除内存读写开销彻底改变了这种范式。值得注意的是，在IMC架构中的矢量矩阵乘法（VMM）配置中使用电阻性随机存取存储器（RRAM）已经证明了显著的性能增强。在提出的工作中，利用数字到时间转换器（dtc）和时间到数字转换器（tdc）在内存计算（IMC）架构中大大优化了硬件资源。我们提出的DTC和TDC块的功耗分别为$41 mu text{W}$和$38 mu text{W}$，延迟分别为$896 text{ps}$和$530 text{ps}$。此外，我们引入了一个带有复位停止块（RSB）的$4T-1R$结构，促进了2位RRAM重编程，并且需要$1.07 mu text{s}$的延迟和$0.11 text{pJ}$的能量/单元。时域VMM （TDVMM）架构的整体能源效率为$866.6 text{Tops/W}$，比当代TDVMM效率高$1.61 $。此外，我们的设计始终以23%的周期变异性执行，展示了其对变化的容忍度。
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