In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V$_text{r}$ and I$_text{r}$) variations. Such V$_text{r}$ and I$_text{r}$ variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).
{"title":"Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions","authors":"Pranav Acharya;Ali Rezaei;Amretashis Sengupta;Tapas Dutta;Naveen Kumar;Patryk Maciazek;Asen Asenov;Vihar Georgiev","doi":"10.1109/TNANO.2024.3504963","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504963","url":null,"abstract":"In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house simulator called NESS (Nano-Electronics Simulation Software). The NEGF formalism allows us to capture the detailed physical picture of quantum mechanical effects such as electrostatic quantum confinement, resonant tunneling of electrons through barriers in such structures and negative differential resistance. Also, by using NESS capabilities, we have simulated RTDs with Random Discrete Dopants (RDDs) as a source of statistical variability in the device. Our work shows that there is a direct correlation between the positions and the numbers of RDDs and main device output characteristics such as resonant-peak voltage and current (V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000) variations. Such V\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 and I\u0000<inline-formula><tex-math>$_text{r}$</tex-math></inline-formula>\u0000 variability in RTDs is shown to be independent and yet also correlated. Hence, both parameters can be used together to encode information. This provides the opportunity and possibility for using a single or multiple RTDs as Physical Unclonable Functions (PUFs).","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"815-821"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-22DOI: 10.1109/TNANO.2024.3504601
Banti Yadav;Pankaj Srivastava;Varun Sharma
Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the $mathbf {E-k}$ diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters $mathbf {(R_{Q}, L_{K}, C_{Q})}$. The calculation of the transmission channels $mathbf {(N_{ch})}$ against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of $mathbf {R_{Q}}$ (6.45 Kohm), $mathbf {L_{K}}$$mathbf {(6.42nH/mu m)}$, and $ mathbf {C_{Q}(6.16pF/cm)}$ for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.
我们采用第一原理方法，探究了用于互连应用的 n 掺杂人字形硫化锗纳米带（ZGeSNR）的电子、结构和传输特性。我们探讨了硫替代的两种可能情况，即顶边的 S 替代和底边的 S 替代。我们计算的形成能表明，掺磷（P）和掺氮（N）的 ZGeSNR 构型在热力学上都是稳定的。此外，通过 $mathbf {E-k}$ 图和 DOS 曲线计算，我们还发现掺杂结构与原始结构相比具有金属特性。最后，我们进行了基于两个探针器件模型的传输分析，对关键的小信号动态参数 $mathbf {(R_{Q}, L_{K}, C_{Q})}$ 进行了评论。然后研究了传输通道 $mathbf {(N_{ch})}$ 与可变偏置电压的关系，结果表明 $mathbf {R_{Q}}$ （6.45 Kohm）、$mathbf {L_{K}}$ $mathbf {(6.42nH/mu m)}$和$mathbf {C_{Q}(6.16pF/cm)}$ 为掺杂了 S-site-P的 ZGeSNR（底部），使其成为纳米级互连的有力竞争者。
{"title":"Substitutionally Doped Zigzag Germanium Sulfide Nanoribbon for Interconnect Applications: DFT-NEGF Approach","authors":"Banti Yadav;Pankaj Srivastava;Varun Sharma","doi":"10.1109/TNANO.2024.3504601","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3504601","url":null,"abstract":"Using the first-principles approach, we have probed the electronic, structural, and transport properties of n-doped zigzag germanium sulfide nanoribbons (ZGeSNR) for interconnect application. We have explored two possible cases of sulfur substitution, namely S-substitution at the top edge and S-substitution at the bottom edge. Our calculated formation energy suggests that both the phosphorus (P) and nitrogen (N) doped ZGeSNR configurations were thermodynamically stable. Further, with the \u0000<inline-formula><tex-math>$mathbf {E-k}$</tex-math></inline-formula>\u0000 diagram and DOS profile calculation, we also revealed that the doped structure possesses a metallic character in contrast to its pristine counterparts. Finally, two probe device model-based transport analysis were performed to comment on crucial small-signal dynamic parameters \u0000<inline-formula><tex-math>$mathbf {(R_{Q}, L_{K}, C_{Q})}$</tex-math></inline-formula>\u0000. The calculation of the transmission channels \u0000<inline-formula><tex-math>$mathbf {(N_{ch})}$</tex-math></inline-formula>\u0000 against the variable biased voltage was then investigated, which indicates the lowest and bias-insensitive value of \u0000<inline-formula><tex-math>$mathbf {R_{Q}}$</tex-math></inline-formula>\u0000 (6.45 Kohm), \u0000<inline-formula><tex-math>$mathbf {L_{K}}$</tex-math></inline-formula>\u0000 \u0000<inline-formula><tex-math>$mathbf {(6.42nH/mu m)}$</tex-math></inline-formula>\u0000, and \u0000<inline-formula><tex-math>$ mathbf {C_{Q}(6.16pF/cm)}$</tex-math></inline-formula>\u0000 for ZGeSNR doped with S-site-P (bottom), making it a promising contender for nanoscale interconnect.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"809-814"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-12DOI: 10.1109/TNANO.2024.3496487
Ariba Siddiqui;Mitradip Bhattacharjee
The growing interest in sensors and microdevices in different applications has led to the exploration of the most efficient and appropriate synthesis methods for flexible device development. In this direction, nanofibers have gained significant attention. However, in many cases, efficient and controlled transfer of nanofibers plays an important role in various device developments. In this study, thermomechanical i.e., temperature and pressure-induced transfer of poly(vinylidene fluoride) (PVDF) electrospun nanofibers on flexible poly(dimethylsiloxane) (PDMS) substrate has been explored. The average diameter of the transferred nanofibers is 169.78 nm. The d33 of PVDF nanofibers was 25 pC/N and F(β) was found to be 80.84%. The synthesized nanofibers have effectively been transferred onto a flexible PDMS substrate with more than 92% retention of optical transparency. It is observed that the transfer of the fibers depends on the applied pressure and adhesion between the materials. Further, it was found that fully cured PDMS substrate heated at 120 °C showed better transfer efficiency (12.544%) with higher stability. The use of PVDF nanofibers along with the inherent flexibility and transparency of PDMS, renders the produced substrate highly promising for the development of low-cost, lightweight, and easily constructed flexible sensors. Moreover, the fabricated nanofibrous mat generated a maximum voltage of 2.78 V on continuous tapping.
{"title":"Highly Efficient and Controlled Thermomechanical Transfer of Electrospun PVDF Nanofiber on Flexible and Transparent PDMS Substrate","authors":"Ariba Siddiqui;Mitradip Bhattacharjee","doi":"10.1109/TNANO.2024.3496487","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3496487","url":null,"abstract":"The growing interest in sensors and microdevices in different applications has led to the exploration of the most efficient and appropriate synthesis methods for flexible device development. In this direction, nanofibers have gained significant attention. However, in many cases, efficient and controlled transfer of nanofibers plays an important role in various device developments. In this study, thermomechanical i.e., temperature and pressure-induced transfer of poly(vinylidene fluoride) (PVDF) electrospun nanofibers on flexible poly(dimethylsiloxane) (PDMS) substrate has been explored. The average diameter of the transferred nanofibers is 169.78 nm. The d\u0000<sub>33</sub>\u0000 of PVDF nanofibers was 25 pC/N and F(β) was found to be 80.84%. The synthesized nanofibers have effectively been transferred onto a flexible PDMS substrate with more than 92% retention of optical transparency. It is observed that the transfer of the fibers depends on the applied pressure and adhesion between the materials. Further, it was found that fully cured PDMS substrate heated at 120 °C showed better transfer efficiency (12.544%) with higher stability. The use of PVDF nanofibers along with the inherent flexibility and transparency of PDMS, renders the produced substrate highly promising for the development of low-cost, lightweight, and easily constructed flexible sensors. Moreover, the fabricated nanofibrous mat generated a maximum voltage of 2.78 V on continuous tapping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"786-793"},"PeriodicalIF":2.1,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-11DOI: 10.1109/TNANO.2024.3495541
Jorge Torres Gómez;Bige Deniz Unluturk;Florian-Lennert Lau;Jennifer Simonjan;Regine Wendt;Stefan Fischer;Falko Dressler
This study introduces an innovative DNA-based nanonetwork designed to detect and localize abnormalities within the human body. The concept for the architecture integrates nanosensors, nanocollectors, and a gateway device, facilitating the detection and communication of disease indicators through molecular and intra-body links. Modeling DNA tiles for signal amplification and fusion rules (AND, OR, MAJORITY), the system enhances detection accuracy while enabling real-time localization of health anomalies via machine learning models. Extensive simulations demonstrate the efficacy of this approach in the dynamic environment of human vessels, showing promising detection probabilities and minimal false alarms. This research contributes to precision medicine by offering a scalable and efficient method for early disease detection and localization, paving the way for timely interventions and improved healthcare outcomes.
本研究介绍了一种基于 DNA 的创新型纳米网络，旨在检测和定位人体内的异常情况。该架构的概念整合了纳米传感器、纳米收集器和网关设备，通过分子和体内链接促进疾病指标的检测和通信。该系统利用 DNA 瓦片信号放大和融合规则（AND、OR、MAJORITY）建模，提高了检测精度，同时通过机器学习模型实现了健康异常的实时定位。大量模拟证明了这种方法在人体血管动态环境中的有效性，显示出良好的检测概率和最小的误报率。这项研究为早期疾病检测和定位提供了一种可扩展的高效方法，为及时干预和改善医疗效果铺平了道路，从而为精准医疗做出了贡献。
{"title":"DNA-Based Nanonetwork for Abnormality Detection and Localization in the Human Body","authors":"Jorge Torres Gómez;Bige Deniz Unluturk;Florian-Lennert Lau;Jennifer Simonjan;Regine Wendt;Stefan Fischer;Falko Dressler","doi":"10.1109/TNANO.2024.3495541","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3495541","url":null,"abstract":"This study introduces an innovative DNA-based nanonetwork designed to detect and localize abnormalities within the human body. The concept for the architecture integrates nanosensors, nanocollectors, and a gateway device, facilitating the detection and communication of disease indicators through molecular and intra-body links. Modeling DNA tiles for signal amplification and fusion rules (\u0000<monospace>AND</monospace>\u0000, OR, \u0000<monospace>MAJORITY</monospace>\u0000), the system enhances detection accuracy while enabling real-time localization of health anomalies via machine learning models. Extensive simulations demonstrate the efficacy of this approach in the dynamic environment of human vessels, showing promising detection probabilities and minimal false alarms. This research contributes to precision medicine by offering a scalable and efficient method for early disease detection and localization, paving the way for timely interventions and improved healthcare outcomes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"794-808"},"PeriodicalIF":2.1,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142825793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1109/TNANO.2024.3494856
Zidu Li;Moin Diwan;Phil David Börner;Andreas Bablich;Heidemarie Schmidt;Peter Haring Bolívar;Bhaskar Choubey
An Ag/SiO$_{2}$/ITO thin-film memristor with a simple deposition technique that exhibits bidirectional threshold and bipolar memristive switching is presented. By applying adequate compliance currents, the switching mechanism of the memristor can be transitioned from threshold switching to bipolar switching. The reverse transition, from bipolar to threshold can be realized by applying a large negative current. This bidirectional switching is stable and reproducible, which has been proven by multiple experimental results. In addition, Verilog-A based modeling approach of this directional switching mechanism is also presented.
{"title":"On Bidirectional Transition Between Threshold and Bipolar Switching in Ag/SiO$_{2}$/ITO Memristors","authors":"Zidu Li;Moin Diwan;Phil David Börner;Andreas Bablich;Heidemarie Schmidt;Peter Haring Bolívar;Bhaskar Choubey","doi":"10.1109/TNANO.2024.3494856","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3494856","url":null,"abstract":"An Ag/SiO\u0000<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>\u0000/ITO thin-film memristor with a simple deposition technique that exhibits bidirectional threshold and bipolar memristive switching is presented. By applying adequate compliance currents, the switching mechanism of the memristor can be transitioned from threshold switching to bipolar switching. The reverse transition, from bipolar to threshold can be realized by applying a large negative current. This bidirectional switching is stable and reproducible, which has been proven by multiple experimental results. In addition, Verilog-A based modeling approach of this directional switching mechanism is also presented.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"771-777"},"PeriodicalIF":2.1,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-05DOI: 10.1109/TNANO.2024.3492021
Reetwik Bhadra;Ramesh Kumar;Amitesh Kumar
This study emphasizes the utilization of split-gate technology in designing a tunable artificial synapse with high energy efficiency. A split-gate dual metal synaptic transistor (SGDMST) is proposed in this work with an Indium-gallium-zinc-oxide (IGZO) channel and a proton-based nanogranular Al2O3 electrolyte working on an electric-double-layer (EDL) technique. The split gate, along with the dual metal used, allows precise gate control with high energy efficacy and also enhances the potentiation and depression synaptic strengths of the device. Furthermore, extensive studies have been conducted on the impact of scaling channel width and employing either single or dual metal gate electrodes on synaptic properties. The findings demonstrate precise simulations of synaptic processes, including paired-pulse facilitation, Short-Term Plasticity (STP), Long-Term Plasticity (LTP), and depression, and comparisons are drawn based on the variables examined. The results provide a concise overview of the split-gate synaptic device and its potential impact on developing neuromorphic computing systems.
{"title":"Dual Metal Split Gate-Based Emulated Synaptic Device With Redacted Plasticity Utilizing Nanogranular Al2O3 Based Ion Conducting Electrolyte","authors":"Reetwik Bhadra;Ramesh Kumar;Amitesh Kumar","doi":"10.1109/TNANO.2024.3492021","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3492021","url":null,"abstract":"This study emphasizes the utilization of split-gate technology in designing a tunable artificial synapse with high energy efficiency. A split-gate dual metal synaptic transistor (SGDMST) is proposed in this work with an Indium-gallium-zinc-oxide (IGZO) channel and a proton-based nanogranular Al\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000 electrolyte working on an electric-double-layer (EDL) technique. The split gate, along with the dual metal used, allows precise gate control with high energy efficacy and also enhances the potentiation and depression synaptic strengths of the device. Furthermore, extensive studies have been conducted on the impact of scaling channel width and employing either single or dual metal gate electrodes on synaptic properties. The findings demonstrate precise simulations of synaptic processes, including paired-pulse facilitation, Short-Term Plasticity (STP), Long-Term Plasticity (LTP), and depression, and comparisons are drawn based on the variables examined. The results provide a concise overview of the split-gate synaptic device and its potential impact on developing neuromorphic computing systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"765-770"},"PeriodicalIF":2.1,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142757839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-28DOI: 10.1109/TNANO.2024.3487223
Nandit Kaushik;B. Srinivasu
In-Memory-Computing (IMC) through memristive architectures has recently gained traction owing to their capacity to perform logic operations within a crossbar, optimizing both area and speed constraints. This paper introduces two approximate serial IMPLY-based subtractor designs, denoted as Serial IMPLY-based Approximate Subtractor Design-1 (SIASD-1), Serial IMPLY-based Approximate Subtractor Design-2 (SIASD-2), with potential applications in image processing and deep neural networks. The proposed designs are implemented in MAGIC topology for comparison, named as Serial MAGIC-based Approximate Subtractor Design-1 (SMASD-1) and Serial MAGIC-based Approximate Subtractor Design-2 (SMASD-2). Moreover, these proposed subtractor designs are extended to design magnitude comparators. IMPLY-based approximate designs improve the overall latency up to 1.67× with energy savings in the range of 17.4% to 40.3% while occupying the same number of memristors for SIASD-1 and an increase of 3 to 5 memristors for SIASD-2, compared to the best existing exact 8-bit serial IMPLY subtractor. SMASD-1 and SMASD-2 improve the latency up to 1.43×, and energy efficiency are up by 77.6% compared to other MAGIC-based exact designs. Additionally, as comparators, the SIASD-1 and SIASD-2 are up to 4.93× faster with energy reduction up to 79.7% compared to their IMPLY-based equivalents. Similarly, the SMASD-1 and SMASD-2 reduce the latency up to 62% with area savings of 77%, compared to MAGIC-based equivalent designs. Furthermore, the proposed subtractor designs undergo analysis in an image processing application called Motion Detection, while the comparators are evaluated in Max Pooling operations. With Peak Signal-to-Noise Ratio (PSNR) and Structural Similarity Index Measure (SSIM) serving as assessment metrics, the proposed designs consistently demonstrate acceptable PSNR and SSIM values, affirming their suitability for these applications.
{"title":"High-Speed and Area-Efficient Serial IMPLY-Based Approximate Subtractor and Comparator for Image Processing and Neural Networks","authors":"Nandit Kaushik;B. Srinivasu","doi":"10.1109/TNANO.2024.3487223","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3487223","url":null,"abstract":"In-Memory-Computing (IMC) through memristive architectures has recently gained traction owing to their capacity to perform logic operations within a crossbar, optimizing both area and speed constraints. This paper introduces two approximate serial IMPLY-based subtractor designs, denoted as Serial IMPLY-based Approximate Subtractor Design-1 (SIASD-1), Serial IMPLY-based Approximate Subtractor Design-2 (SIASD-2), with potential applications in image processing and deep neural networks. The proposed designs are implemented in MAGIC topology for comparison, named as Serial MAGIC-based Approximate Subtractor Design-1 (SMASD-1) and Serial MAGIC-based Approximate Subtractor Design-2 (SMASD-2). Moreover, these proposed subtractor designs are extended to design magnitude comparators. IMPLY-based approximate designs improve the overall latency up to 1.67× with energy savings in the range of 17.4% to 40.3% while occupying the same number of memristors for SIASD-1 and an increase of 3 to 5 memristors for SIASD-2, compared to the best existing exact 8-bit serial IMPLY subtractor. SMASD-1 and SMASD-2 improve the latency up to 1.43×, and energy efficiency are up by 77.6% compared to other MAGIC-based exact designs. Additionally, as comparators, the SIASD-1 and SIASD-2 are up to 4.93× faster with energy reduction up to 79.7% compared to their IMPLY-based equivalents. Similarly, the SMASD-1 and SMASD-2 reduce the latency up to 62% with area savings of 77%, compared to MAGIC-based equivalent designs. Furthermore, the proposed subtractor designs undergo analysis in an image processing application called Motion Detection, while the comparators are evaluated in Max Pooling operations. With Peak Signal-to-Noise Ratio (PSNR) and Structural Similarity Index Measure (SSIM) serving as assessment metrics, the proposed designs consistently demonstrate acceptable PSNR and SSIM values, affirming their suitability for these applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"748-757"},"PeriodicalIF":2.1,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-23DOI: 10.1109/TNANO.2024.3485758
Leila Shakiba;Mohammad Reza Salehi;Farzin Emami
In this article, the graphene-based metamaterial perfect absorber was investigated in the terahertz region. Due to the geometrical symmetry of the proposed absorber structure, it is insensitive to changes in polarization and its angle, and the absorption value is almost the same over angles from 0 to 90 degrees. According to the configuration of the proposed structure, it is sensitive to changes in the refractive index. Placing graphene on top of the structure improves important sensing parameters, including sensitivity, due to good interaction with the analyte. The proposed structure is being investigated for medical applications including the diagnosis of malaria infection, cancer cells, and hemoglobin identification. The obtained results show the values of sensitivity, figure of merit, and quality coefficient as 2.63(THz/RIU), 175.3(1/RIU), and 523.35, respectively. The accuracy and correctness of the simulation results are checked using the method of equivalent circuit model and transfer matrix method, and there is good agreement between the simulation results and the mentioned methods.
{"title":"Design of a Graphene Based Terahertz Perfect Metamaterial Absorber With Multiple Sensing Performance","authors":"Leila Shakiba;Mohammad Reza Salehi;Farzin Emami","doi":"10.1109/TNANO.2024.3485758","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3485758","url":null,"abstract":"In this article, the graphene-based metamaterial perfect absorber was investigated in the terahertz region. Due to the geometrical symmetry of the proposed absorber structure, it is insensitive to changes in polarization and its angle, and the absorption value is almost the same over angles from 0 to 90 degrees. According to the configuration of the proposed structure, it is sensitive to changes in the refractive index. Placing graphene on top of the structure improves important sensing parameters, including sensitivity, due to good interaction with the analyte. The proposed structure is being investigated for medical applications including the diagnosis of malaria infection, cancer cells, and hemoglobin identification. The obtained results show the values of sensitivity, figure of merit, and quality coefficient as 2.63(THz/RIU), 175.3(1/RIU), and 523.35, respectively. The accuracy and correctness of the simulation results are checked using the method of equivalent circuit model and transfer matrix method, and there is good agreement between the simulation results and the mentioned methods.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"741-747"},"PeriodicalIF":2.1,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-23DOI: 10.1109/TNANO.2024.3485213
E. Salvador;M.B. Gonzalez;F. Campabadal;R. Rodriguez;E. Miranda
Resistive RAMs or memristors are nowadays considered serious candidates for the implementation of energy efficient and scalable neuromorphic computing systems. However, a major drawback of this technology is the instability of the device current-voltage (I-V) characteristic as is clearly revealed by the so-called cycle-to-cycle (C2C) variability. This lack of complete reproducibility is a consequence of the spontaneous or induced morphological changes of the filamentary conducting structure occurring at atomic level. Variability is an essential issue any compact model for the conduction characteristics of RRAM devices should be able to cope with to be considered realistic. In this work, a thorough investigation of the C2C variability in the I-V loops of HfO2-based memristive structures was carried out with the aim of incorporating this information into the equations of the Dynamic Memdiode Model. From the compact modeling viewpoint, C2C correlation effects are achieved using model parameters expressed as mean-reverting stochastic processes driven by Wiener noise (Ornstein-Uhlenbeck process). The direct and indirect links between the random behavior of the model parameters and the observable magnitudes (high and low resistance states, set and reset voltages, etc.) are discussed. The agreement between simulation and experimental results is statistically assessed using the Wasserstein's distance metric.
{"title":"Modeling and Simulation of Correlated Cycle-to- Cycle Variability in the Current-Voltage Hysteresis Loops of RRAM Devices","authors":"E. Salvador;M.B. Gonzalez;F. Campabadal;R. Rodriguez;E. Miranda","doi":"10.1109/TNANO.2024.3485213","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3485213","url":null,"abstract":"Resistive RAMs or memristors are nowadays considered serious candidates for the implementation of energy efficient and scalable neuromorphic computing systems. However, a major drawback of this technology is the instability of the device current-voltage (I-V) characteristic as is clearly revealed by the so-called cycle-to-cycle (C2C) variability. This lack of complete reproducibility is a consequence of the spontaneous or induced morphological changes of the filamentary conducting structure occurring at atomic level. Variability is an essential issue any compact model for the conduction characteristics of RRAM devices should be able to cope with to be considered realistic. In this work, a thorough investigation of the C2C variability in the I-V loops of HfO\u0000<sub>2</sub>\u0000-based memristive structures was carried out with the aim of incorporating this information into the equations of the Dynamic Memdiode Model. From the compact modeling viewpoint, C2C correlation effects are achieved using model parameters expressed as mean-reverting stochastic processes driven by Wiener noise (Ornstein-Uhlenbeck process). The direct and indirect links between the random behavior of the model parameters and the observable magnitudes (high and low resistance states, set and reset voltages, etc.) are discussed. The agreement between simulation and experimental results is statistically assessed using the Wasserstein's distance metric.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"758-764"},"PeriodicalIF":2.1,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10730782","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/TNANO.2024.3481392
Gilsang Yoon;Donghyun Go;Jounghun Park;Donghwi Kim;Jongwoo Kim;Ukju An;Jungsik Kim;Jeong-Soo Lee;Byoung Don Kong
Trap profiles in the bandgap-engineered tunneling oxide (BE-TOX) layer of a 3D NAND flash memory were investigated using a transient current trap spectroscopy technique. A new pulse scheme was introduced to generate channel holes and subsequently analyze the hole traps in the BE-TOX layer. In the fresh cell, the hole traps were primarily located at a trap energy level (ET) of 1.1 eV, whereas the electron traps exhibited two distinct peaks at ET = 0.75 and 1.25 eV. With increasing program/erase (P/E) cycling operations, the peak ET associated with hole traps shifted toward shallower levels. Conversely, the electron traps remained unchanged, although their intensities increased. The extracted trap generation exhibited the power-law characteristics.
利用瞬态电流陷阱光谱技术研究了三维 NAND 闪存带隙工程隧道氧化物（BE-TOX）层中的陷阱剖面。研究采用了一种新的脉冲方案来产生沟道空穴，然后分析 BE-TOX 层中的空穴陷阱。在新电池中，空穴陷阱主要位于 1.1 eV 的陷阱能级 (ET)，而电子陷阱则在 ET = 0.75 和 1.25 eV 处显示出两个明显的峰值。随着编程/擦除（P/E）循环操作的增加，与空穴阱相关的峰值 ET 向更浅的水平移动。相反，电子陷阱保持不变，但其强度有所增加。提取的陷阱生成呈现出幂律特性。
{"title":"Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory","authors":"Gilsang Yoon;Donghyun Go;Jounghun Park;Donghwi Kim;Jongwoo Kim;Ukju An;Jungsik Kim;Jeong-Soo Lee;Byoung Don Kong","doi":"10.1109/TNANO.2024.3481392","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3481392","url":null,"abstract":"Trap profiles in the bandgap-engineered tunneling oxide (BE-TOX) layer of a 3D NAND flash memory were investigated using a transient current trap spectroscopy technique. A new pulse scheme was introduced to generate channel holes and subsequently analyze the hole traps in the BE-TOX layer. In the fresh cell, the hole traps were primarily located at a trap energy level (\u0000<italic>E<sub>T</sub></i>\u0000) of 1.1 eV, whereas the electron traps exhibited two distinct peaks at \u0000<italic>E<sub>T</sub></i>\u0000 = 0.75 and 1.25 eV. With increasing program/erase (P/E) cycling operations, the peak \u0000<italic>E<sub>T</sub></i>\u0000 associated with hole traps shifted toward shallower levels. Conversely, the electron traps remained unchanged, although their intensities increased. The extracted trap generation exhibited the power-law characteristics.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"733-740"},"PeriodicalIF":2.1,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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