Pub Date : 2025-06-30DOI: 10.1109/TNANO.2025.3584047
Aman Shekhar;Sanjoy Mandal
This paper presents a novel design and performance analysis of a modified double-ring resonator (MDRR) integrated with high contrast optical Bragg grating (HCOBG) structure functioning as an optical filter and a biosensor. The MATLAB environment is used to analyze the configuration’s output, and the finite-difference time-domain (FDTD) numerical approach is employed to model the configuration as a biosensor. The grating-assisted Modified Double Ring Resonator is optimized for precise filtering in optical communication systems and high sensitivity in biosensing applications. Sufficiently large free spectral range (FSR) with high biosensing sensitivity and figure of merit (FOM) of 1057.094 nm per refractive index unit (RIU) and 107.003 RIU$^{-1}$ respectively, the proposed configuration demonstrates potential for high-performance optical filtering for dense wavelength division multiplexing (DWDM) systems as well as improved biosensing for critical biomedical applications.
{"title":"Design and Analysis of Modified Double Ring Resonator With Embedded High Contrast Optical Bragg Grating as an Optical Filter and a Biosensor","authors":"Aman Shekhar;Sanjoy Mandal","doi":"10.1109/TNANO.2025.3584047","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584047","url":null,"abstract":"This paper presents a novel design and performance analysis of a modified double-ring resonator (MDRR) integrated with high contrast optical Bragg grating (HCOBG) structure functioning as an optical filter and a biosensor. The MATLAB environment is used to analyze the configuration’s output, and the finite-difference time-domain (FDTD) numerical approach is employed to model the configuration as a biosensor. The grating-assisted Modified Double Ring Resonator is optimized for precise filtering in optical communication systems and high sensitivity in biosensing applications. Sufficiently large free spectral range (FSR) with high biosensing sensitivity and figure of merit (FOM) of 1057.094 nm per refractive index unit (RIU) and 107.003 RIU<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula> respectively, the proposed configuration demonstrates potential for high-performance optical filtering for dense wavelength division multiplexing (DWDM) systems as well as improved biosensing for critical biomedical applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"330-337"},"PeriodicalIF":2.1,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vertical silicon nanowire transistors are among the most promising device concepts for future low-power electronics due to their gate-all-around nature as well as their 3D stacking potential. In this work we review the current status of transistor fabrication on vertical silicon nanostructures and identify the most important challenges for successful process integration. Channel patterning, source/drain contact formation, gate-deposition and spacer engineering are identified as key steps independent on the actual process integration sequence. We conclude the paper with two emerging device examples and discuss the influence of the processing challenges on the transistor design.
{"title":"Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors","authors":"Cigdem Cakirlar;Jonas Müller;Christoph Beyer;Konstantinos Moustakas;Bruno Neckel Wesling;Giulio Galderisi;Sylvain Pelloquin;Cristell Maneux;Thomas Mikolajick;Guilhem Larrieu;Jens Trommer","doi":"10.1109/TNANO.2025.3582023","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3582023","url":null,"abstract":"Vertical silicon nanowire transistors are among the most promising device concepts for future low-power electronics due to their gate-all-around nature as well as their 3D stacking potential. In this work we review the current status of transistor fabrication on vertical silicon nanostructures and identify the most important challenges for successful process integration. Channel patterning, source/drain contact formation, gate-deposition and spacer engineering are identified as key steps independent on the actual process integration sequence. We conclude the paper with two emerging device examples and discuss the influence of the processing challenges on the transistor design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"356-362"},"PeriodicalIF":2.1,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144634629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-20DOI: 10.1109/TNANO.2025.3581782
Parveen Kumar;Balwinder Raj;Girish Wadhwa
An analytical model of nanowire-tunnel field effect transistor (NWTFET) has been developed in this article with a gate-all-around structure and band-to-band tunneling (BTBT) mechanism. The proposed model is effective for operation in all regions such as source, drain, channel and measures accurate potential, transfer characteristics and is immune to short channel effect. The drain current and surface potential have been evaluated with the variation in metal work function, doping concentration, oxide thickness and channel material at different bias conditions (VDS and VGS). The validation of observed results has been performed through TCAD simulations. The surface potential model is designed by separating the substrate of silicon into three dissimilar areas (I, II, III) and determining the 2-D Poisson’s equation (PE) in other areas. To utilize Poisson’s Equation appropriately at various boundary conditions, a descriptive parabolic approximation strategy is used.
{"title":"Analytical Modeling and Simulation Investigation of Nanowire Tunnel FET for Potential and Drain Current Evaluation","authors":"Parveen Kumar;Balwinder Raj;Girish Wadhwa","doi":"10.1109/TNANO.2025.3581782","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3581782","url":null,"abstract":"An analytical model of nanowire-tunnel field effect transistor (NWTFET) has been developed in this article with a gate-all-around structure and band-to-band tunneling (BTBT) mechanism. The proposed model is effective for operation in all regions such as source, drain, channel and measures accurate potential, transfer characteristics and is immune to short channel effect. The drain current and surface potential have been evaluated with the variation in metal work function, doping concentration, oxide thickness and channel material at different bias conditions (V<sub>DS</sub> and V<sub>GS</sub>). The validation of observed results has been performed through TCAD simulations. The surface potential model is designed by separating the substrate of silicon into three dissimilar areas (I, II, III) and determining the 2-D Poisson’s equation (PE) in other areas. To utilize Poisson’s Equation appropriately at various boundary conditions, a descriptive parabolic approximation strategy is used.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"323-329"},"PeriodicalIF":2.1,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144597741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-18DOI: 10.1109/TNANO.2025.3580798
Subarna Datta;Barnali Ghosh;Soumyadipta Pal
This work investigates the integration of single nanowire La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca; $x$ = 0.5 for A = Sr) nano-devices via advanced nanolithography techniques for transport measurements. The comparative study of resistivity in bulk and nanowire forms highlights a significant size-dependent enhancement in transport behavior. Notably, the resistivity data for La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca; $x$ = 0.5 for A = Sr) nanowires could not be fully explained by conventional models like Mott Variable Range Hopping (VRH) model, Efros-Shklovskii (ES) localization model, adiabatic small polaron hopping (ASPH) model etc. A hybrid model incorporating fluctuation-induced tunneling and disorder-induced localization more accurately captures the resistivity variation across temperature ranges. This refined approach successfully models transport behavior, particularly in the insulating regime, validating its applicability over previous models. The study establishes a robust methodology combining precise lithographic fabrication and improved theoretical modeling, paving the way for accurate transport characterization in complex oxide nanowires.
本研究通过先进的纳米光刻技术，研究了单纳米线La$ $ {1-x}$A$ $ {x}$MnO$ $ {3}$ （A = Ca = $x$ = 0.3 & 0.5; A = Sr = $x$ = 0.5）纳米器件在输运测量中的集成。体积和纳米线形式的电阻率比较研究强调了传输行为的显着尺寸依赖性增强。值得注意的是，La$_{1-x}$A$_{x}$MnO$_{3}$ （A = Ca = $x$ = 0.3和0.5;A = Sr = $x$ = 0.5）纳米线的电阻率数据不能用Mott变范围跳变（VRH）模型、Efros-Shklovskii （ES）局部化模型、绝热小极化子跳变（ASPH）模型等传统模型完全解释。结合波动诱导隧穿和无序诱导局部化的混合模型更准确地捕获了电阻率在温度范围内的变化。这种改进的方法成功地模拟了运输行为，特别是在绝缘状态下，验证了它比以前的模型的适用性。该研究建立了一种强大的方法，结合了精确的光刻制造和改进的理论建模，为复杂氧化物纳米线的精确传输表征铺平了道路。
{"title":"Investigation of Size-Dependent Electrical Transport in Single Nanowire La$_{1-x}$A$_{x}$MnO$_{3}$ ($x$ = 0.3 & 0.5 for A = Ca and $x$ = 0.5 for A = Sr) Using Nanolithography-Based Device Fabrication","authors":"Subarna Datta;Barnali Ghosh;Soumyadipta Pal","doi":"10.1109/TNANO.2025.3580798","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3580798","url":null,"abstract":"This work investigates the integration of single nanowire La<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>A<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>MnO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> (<inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.3 & 0.5 for A = Ca; <inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.5 for A = Sr) nano-devices via advanced nanolithography techniques for transport measurements. The comparative study of resistivity in bulk and nanowire forms highlights a significant size-dependent enhancement in transport behavior. Notably, the resistivity data for La<inline-formula><tex-math>$_{1-x}$</tex-math></inline-formula>A<inline-formula><tex-math>$_{x}$</tex-math></inline-formula>MnO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> (<inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.3 & 0.5 for A = Ca; <inline-formula><tex-math>$x$</tex-math></inline-formula> = 0.5 for A = Sr) nanowires could not be fully explained by conventional models like Mott Variable Range Hopping (VRH) model, Efros-Shklovskii (ES) localization model, adiabatic small polaron hopping (ASPH) model etc. A hybrid model incorporating fluctuation-induced tunneling and disorder-induced localization more accurately captures the resistivity variation across temperature ranges. This refined approach successfully models transport behavior, particularly in the insulating regime, validating its applicability over previous models. The study establishes a robust methodology combining precise lithographic fabrication and improved theoretical modeling, paving the way for accurate transport characterization in complex oxide nanowires.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"593-601"},"PeriodicalIF":2.1,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145886594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Here we propose a Cu2O-ZnO-based high-aspect ratio core-shell nanowire (with radial p-n junction) for efficient photodetection via a cost-effective fabrication route. The proposed platform exploits enhanced active depletion area offered by radial p-n junction in high aspect ratio nanowires, along with this excellent transport properties of the device. This results in superior light-matter interaction and better charge collection efficiency. The proposed device demonstrates significant improvement in responsivity via a simple fabrication approach and offers a compact and cost-effective alternative to complex, highly sensitive photodetectors. It can find applications in remote sensing, medical diagnostics barcode readers, and wireless environmental monitoring. Moreover, the enhanced light-matter interaction via the proposed approach can be useful in various other applications such as Solar Cells, Light Emitting Diodes, and Optical Modulation.
{"title":"Efficient Photodetection via High Aspect Ratio Core-Shell Nanowire Array","authors":"Vishal Kaushik;Swati Rajput;Ashavani Kumar;Mukesh Kumar","doi":"10.1109/TNANO.2025.3577930","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3577930","url":null,"abstract":"Here we propose a Cu<sub>2</sub>O-ZnO-based high-aspect ratio core-shell nanowire (with radial p-n junction) for efficient photodetection via a cost-effective fabrication route. The proposed platform exploits enhanced active depletion area offered by radial p-n junction in high aspect ratio nanowires, along with this excellent transport properties of the device. This results in superior light-matter interaction and better charge collection efficiency. The proposed device demonstrates significant improvement in responsivity via a simple fabrication approach and offers a compact and cost-effective alternative to complex, highly sensitive photodetectors. It can find applications in remote sensing, medical diagnostics barcode readers, and wireless environmental monitoring. Moreover, the enhanced light-matter interaction via the proposed approach can be useful in various other applications such as Solar Cells, Light Emitting Diodes, and Optical Modulation.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"318-322"},"PeriodicalIF":2.1,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-06DOI: 10.1109/TNANO.2025.3577501
Sampati Rao Sridhar;Medha Joshi;Brijesh Kumar
In this work, a blue narrowband photomultiplication (PM) type organic photodetector (OPD) is fabricated with ZnPc as photon field modulation layer. The photomultiplication in OPD is attributed to electron trap assisted hole injection mechanism. In PM OPD, ZnPc altered the distribution of photogenerated charge carriers within the P3HT:PCBM active layer and results in narrowband detection. This study is the first to demonstrate a narrowband PM OPD with a peak response at 480 nm, using a P3HT:PCBM active layer. The detector demonstrated a rejection ratio (EQE480 nm/EQE570 nm) of 590, and a full width half maximum (FWHM) of 67 nm with 1000 nm thick ZnPc as photon field modulation layer. As the ZnPc layer thickness is increased from 200 nm to 1500 nm, the FWHM of the detector narrowed from 175 nm to 67 nm. The demonstrated narrowband photodetector with response peak in blue region has diverse applications in communication and imaging fields.
{"title":"Blue Narrowband Photomultiplication Type Organic Photodetector Using ZnPc as Photon Field Modulation Layer","authors":"Sampati Rao Sridhar;Medha Joshi;Brijesh Kumar","doi":"10.1109/TNANO.2025.3577501","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3577501","url":null,"abstract":"In this work, a blue narrowband photomultiplication (PM) type organic photodetector (OPD) is fabricated with ZnPc as photon field modulation layer. The photomultiplication in OPD is attributed to electron trap assisted hole injection mechanism. In PM OPD, ZnPc altered the distribution of photogenerated charge carriers within the P3HT:PCBM active layer and results in narrowband detection. This study is the first to demonstrate a narrowband PM OPD with a peak response at 480 nm, using a P3HT:PCBM active layer. The detector demonstrated a rejection ratio (EQE<sub>480 nm</sub>/EQE<sub>570 nm</sub>) of 590, and a full width half maximum (FWHM) of 67 nm with 1000 nm thick ZnPc as photon field modulation layer. As the ZnPc layer thickness is increased from 200 nm to 1500 nm, the FWHM of the detector narrowed from 175 nm to 67 nm. The demonstrated narrowband photodetector with response peak in blue region has diverse applications in communication and imaging fields.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"312-317"},"PeriodicalIF":2.1,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144367000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-03DOI: 10.1109/TNANO.2025.3576246
Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury
A thermally stable ultra-broadband metasurface-based emitter comprising square-shaped Ni resonators on Si substrate was investigated. The planar multilayer metamaterial emitter exhibits high emissivity of 94% over a span of 400–8450 nm wavelength. With the optimized structural parameters, the results show the thermal emission efficiency of 93.55% and photothermal conversion efficiency of 90.5% at 900K, which determine strong solar energy absorption of the emitter cavity. However, variations in structural parameters and the angle of incidence leave a minor impact on thermal emissivity. The findings show the developed structure to be of potential in efficient solar energy utilization.
{"title":"Ni-SiO2 Cell-Assisted Thermally Stable Broadband Metamaterial Emitter","authors":"Muhammad Saqlain;Muhammad Abuzar Baqir;Pankaj Kumar Choudhury","doi":"10.1109/TNANO.2025.3576246","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3576246","url":null,"abstract":"A thermally stable ultra-broadband metasurface-based emitter comprising square-shaped Ni resonators on Si substrate was investigated. The planar multilayer metamaterial emitter exhibits high emissivity of 94% over a span of 400–8450 nm wavelength. With the optimized structural parameters, the results show the thermal emission efficiency of 93.55% and photothermal conversion efficiency of 90.5% at 900K, which determine strong solar energy absorption of the emitter cavity. However, variations in structural parameters and the angle of incidence leave a minor impact on thermal emissivity. The findings show the developed structure to be of potential in efficient solar energy utilization.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"307-311"},"PeriodicalIF":2.1,"publicationDate":"2025-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144299063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-30DOI: 10.1109/TNANO.2025.3565847
Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu
Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.
{"title":"An Intelligent 3D-AFM Scanning Process Based on Online Probe Rotation and Adaptive Speed Strategy","authors":"Huang-Chih Chen;Sheng-An Lee;Ting-An Chou;Li-Chen Fu","doi":"10.1109/TNANO.2025.3565847","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565847","url":null,"abstract":"Atomic Force Microscope (AFM) has remained one of the most prominent morphology tools for examining the microscopic world. However, the 3D-AFM has several disadvantages. First, the physical AFM tip occupies space and may sometimes obstruct the scanning process, creating distorted results, especially for vertical sidewalls. Additionally, the traditional AFM scanning scheme results in sparser data density along steep surfaces. In this work, to alleviate distortion, the AFM probe is allowed to rotate. Moreover, the scanning speed along the fast axis in a scan line has to be adaptive according to terrain variation. Therefore, we aim to develop and implement an intelligent AFM scanning process assisted by the proposed probe rotation decision (PRD) and adaptive speed decision (ASD) modules, enabling the AFM probe to achieve online rotation and variable scan speed. Moreover, methods for online coarse compensation and offline fine compensation are also presented to accurately eliminate tip shifts caused by probe rotation. Finally, some comparison results will be provided to demonstrate the effectiveness of the proposed intelligent scanning process.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"264-276"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-30DOI: 10.1109/TNANO.2025.3565720
Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang
In this study, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) that utilizes the structure of a fully depleted silicon-on-insulator field-effect transistors (FDSOI FETs). In FeRFETs, the non-volatile and reconfigurable electrostatic doping facilitated by ferroelectric enables type conversion. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (>1 × 1021 ${text{cm}^{-3}}$), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field $({{E}_{text{c}}})$ is important to maximize the performance of FeRFETs.
{"title":"FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach","authors":"Donghyeok Lee;Suprem R. Das;Jiseok Kwon;Jiwon Chang","doi":"10.1109/TNANO.2025.3565720","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565720","url":null,"abstract":"In this study, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) that utilizes the structure of a fully depleted silicon-on-insulator field-effect transistors (FDSOI FETs). In FeRFETs, the non-volatile and reconfigurable electrostatic doping facilitated by ferroelectric enables type conversion. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (>1 × 1021 <inline-formula><tex-math>${text{cm}^{-3}}$</tex-math></inline-formula>), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field <inline-formula><tex-math>$({{E}_{text{c}}})$</tex-math></inline-formula> is important to maximize the performance of FeRFETs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"277-281"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144100086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.
{"title":"Stochastic Templates and Noise Dynamics in Memristor Cellular Nonlinear Networks","authors":"Dimitrios Prousalis;Vasileios Ntinas;Christoforos Theodorou;Ioannis Messaris;Ahmet Samil Demirkol;Alon Ascoli;Ronald Tetzlaff","doi":"10.1109/TNANO.2025.3565887","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3565887","url":null,"abstract":"Noise is a pervasive aspect that impacts various systems and environments, from mobile radio channels to biological systems. Within the framework of complex networks, noise poses significant challenges for functionality and performance. In this paper, we investigate the dynamics of a well-known type of locally-coupled computing networks, Memristor Cellular Nonlinear Networks (M-CNNs), in the presence of noise at their interconnection weights, introducing the concept of stochastic weights. In particular, we analyze the effect of noise originating from the synaptic memristors by incorporating both deterministic and stochastic components into synaptic weights, investigating how device-to-device variability and noise affect network performance. Based on the well-established theory of CNNs, we are extending the stability criteria to incorporate synaptic memristor non-idealities and we provide a theoretical framework to analyze their effect on system's performance. In this work, we employ the physics-based Jülich Aachen Resistive Switching Tools (JART) model to study Valence Change Memory (VCM) devices as synapses within our theoretical framework. We investigate the impact of device variability and noise, utilizing statistical properties derived from experimental data reported in the literature. We demonstrate the efficacy of noisy M-CNNs in performing the edge detection task, an example of fundamental image processing applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"282-292"},"PeriodicalIF":2.1,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：