In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders lower drain current than the FeFET thanks to the different carrier injection mechanism (i.e., band-to-band tunneling). Second, the memory window of FeTFET (1.48 V) is ∼1.5 times larger than the FeFET (0.95 V) due to an enhanced erase efficiency. As a result, the FeTFET shows the better training accuracy (∼91.5% ) even with the ∼25 times lower energy consumption (∼0.16 mJ) comparing with the FeFET (∼90.4% accuracy with 4.06 mJ energy consumption). Lastly, the FeTFET shows a good retention property (> 10 years) with a ∼107 endurance characteristic. In short, the FeTFET can be a promising candidate for a low-power synapse device.
{"title":"Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device","authors":"Seungwon Go;Sunwoo Lee;Jaekyun Son;Dong Keun Lee;Hyungju Noh;Jae Yeon Park;Seonggeun Kim;Hyunho Ahn;Sihyun Kim;Sangwan Kim","doi":"10.1109/TNANO.2025.3595532","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3595532","url":null,"abstract":"In this paper, a ferroelectric tunnel field-effect transistor (FeTFET) is demonstrated as a synapse device. The experimental results clearly show that there are several merits in FeTFET as a synapse device comparing with the FeFET. First, the FeTFET shows the ∼3 orders lower drain current than the FeFET thanks to the different carrier injection mechanism (i.e., band-to-band tunneling). Second, the memory window of FeTFET (1.48 V) is ∼1.5 times larger than the FeFET (0.95 V) due to an enhanced erase efficiency. As a result, the FeTFET shows the better training accuracy (∼91.5% ) even with the ∼25 times lower energy consumption (∼0.16 mJ) comparing with the FeFET (∼90.4% accuracy with 4.06 mJ energy consumption). Lastly, the FeTFET shows a good retention property (> 10 years) with a ∼10<sup>7</sup> endurance characteristic. In short, the FeTFET can be a promising candidate for a low-power synapse device.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"413-416"},"PeriodicalIF":2.1,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-01DOI: 10.1109/TNANO.2025.3595009
Cheng-Lun Hsin;Kei-Cheng Yang;Chun-En Hong
Thermal waste heat scavenging has garnered significant attention in recent decades. In this study, we developed a thermoelectric module using earth-abundant elements and evaluated its power conversion performance over a temperature range of 40 to 250 °C. The n-type pillars were fabricated from Al-doped ZnO, while the p-type pillars consisted of a CuS/ZnO alloy. Both types of pillars were sintered in a furnace, and their respective figures of merit were measured up to 250 °C. The module, composed of 45 pairs of these pillars, demonstrated notable power conversion capabilities. Our experimental results highlight a cost-effective approach to manufacturing thermoelectric modules with earth-abundant elements, presenting a viable alternative to conventional methods that rely on expensive materials and complex fabrication processes.
{"title":"Thermoelectric Modules Using Earth-Abundant Elements: The Case of Zn, Cu, Al, O, and S","authors":"Cheng-Lun Hsin;Kei-Cheng Yang;Chun-En Hong","doi":"10.1109/TNANO.2025.3595009","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3595009","url":null,"abstract":"Thermal waste heat scavenging has garnered significant attention in recent decades. In this study, we developed a thermoelectric module using earth-abundant elements and evaluated its power conversion performance over a temperature range of 40 to 250 °C. The n-type pillars were fabricated from Al-doped ZnO, while the p-type pillars consisted of a CuS/ZnO alloy. Both types of pillars were sintered in a furnace, and their respective figures of merit were measured up to 250 °C. The module, composed of 45 pairs of these pillars, demonstrated notable power conversion capabilities. Our experimental results highlight a cost-effective approach to manufacturing thermoelectric modules with earth-abundant elements, presenting a viable alternative to conventional methods that rely on expensive materials and complex fabrication processes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"417-420"},"PeriodicalIF":2.1,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-25DOI: 10.1109/TNANO.2025.3592825
Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam
The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.
{"title":"Spectral Shift From Near to Far-Field Radiation in Metallic Nanoparticles","authors":"Ahsan Irshad;Qamrosh Sajjad;Abida Parveen;Mehboob Alam","doi":"10.1109/TNANO.2025.3592825","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3592825","url":null,"abstract":"The interaction between light and metallic nanoparticles, driven by potential applications, requires a comprehensive understanding of the intensity and spectral shift from near-field to far-field radiation. The far-field spectra have received extensive attention, yet significant peak shifts in the near-field are often overlooked by Mie solutions, necessitating full-wave numerical solvers for accurate analysis and thus limiting a deeper understanding of near-field behavior. This work proposes an impedance-based compact solution that harnesses the fundamental relationship of voltage-current and the analogy between a series resonant circuit and the near-field to develop compact models uniquely identifying the fundamental mode near and far-field spectral shifts. The results align closely with Mie solutions in the far-field and full-wave solvers in the near-field, demonstrating a strong agreement highlighting the distance-dependent spectral shift dominating the overall response. The compact, parameter-dependent model offers valuable insights, enabling the exploitation of the distinctive near-field interactions of nanoparticles to design and develop extraordinary solutions.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"407-412"},"PeriodicalIF":2.1,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-16DOI: 10.1109/TNANO.2025.3589902
Masoud Berahman;Hamidreza Aghasi
This work explores the electronic transport properties of a double-gated tunneling field effect transistor (TFET) based on Janus monolayer PtSSe. Janus PtSSe, with its unique asymmetrical structure and inherent built-in electric polarization, offers exceptional electronic properties such as a tunable bandgap and high carrier mobility, making it a promising candidate for next-generation electronic devices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, the performance of the PtSSe-based TFET is evaluated, demonstrating a low subthreshold swing as low as 19 mV/dec and an Ion/Ioff ratio as high as $1.64 times 10^{8}$, and a maximum operating frequency of 0.88 THz depending achieved through optimization of doping concentration. The study also investigates the impact of spin-orbit coupling on the material’s electronic properties, offering insights for further optimization. These findings establish Janus PtSSe as a promising material for addressing the limitations of conventional silicon-based FETs and advancing nanoscale electronics by enabling high-performance, low-power devices.
{"title":"Tunneling Field Effect Transistors Based on Janus Monolayer PtSSe","authors":"Masoud Berahman;Hamidreza Aghasi","doi":"10.1109/TNANO.2025.3589902","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3589902","url":null,"abstract":"This work explores the electronic transport properties of a double-gated tunneling field effect transistor (TFET) based on Janus monolayer PtSSe. Janus PtSSe, with its unique asymmetrical structure and inherent built-in electric polarization, offers exceptional electronic properties such as a tunable bandgap and high carrier mobility, making it a promising candidate for next-generation electronic devices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, the performance of the PtSSe-based TFET is evaluated, demonstrating a low subthreshold swing as low as 19 mV/dec and an I<sub>on</sub>/I<sub>off</sub> ratio as high as <inline-formula><tex-math>$1.64 times 10^{8}$</tex-math></inline-formula>, and a maximum operating frequency of 0.88 THz depending achieved through optimization of doping concentration. The study also investigates the impact of spin-orbit coupling on the material’s electronic properties, offering insights for further optimization. These findings establish Janus PtSSe as a promising material for addressing the limitations of conventional silicon-based FETs and advancing nanoscale electronics by enabling high-performance, low-power devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"369-377"},"PeriodicalIF":2.1,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144773231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-02DOI: 10.1109/TNANO.2025.3585167
Kon-Woo Kwon;Yeongkyo Seo
This paper proposes a hybrid spintronic multi-level cell (MLC) optimized for fast and reliable memory operations. The proposed MLC employs two magnetic tunnel junctions with distinct magnetization characteristics within a single cell, leveraging their significant differences in critical current requirements to effectively mitigate write-disturb failures. Moreover, the proposed design incorporates a spin-orbit torque-based switching mechanism along with a device multiplexing architecture, which together enable a one-step write operation and an opportunistic one-step read operation. Simulations demonstrate up to a 2× reduction in latency compared to conventional spintronic MLCs, along with a 2× increase in area efficiency over single-level cell designs and a high write-disturb margin of 61$%$.
{"title":"Hybrid Multi-Level Cell Spin-Orbit Torque Memory for Fast and Robust Memory Operations","authors":"Kon-Woo Kwon;Yeongkyo Seo","doi":"10.1109/TNANO.2025.3585167","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3585167","url":null,"abstract":"This paper proposes a hybrid spintronic multi-level cell (MLC) optimized for fast and reliable memory operations. The proposed MLC employs two magnetic tunnel junctions with distinct magnetization characteristics within a single cell, leveraging their significant differences in critical current requirements to effectively mitigate write-disturb failures. Moreover, the proposed design incorporates a spin-orbit torque-based switching mechanism along with a device multiplexing architecture, which together enable a one-step write operation and an opportunistic one-step read operation. Simulations demonstrate up to a 2× reduction in latency compared to conventional spintronic MLCs, along with a 2× increase in area efficiency over single-level cell designs and a high write-disturb margin of 61<inline-formula><tex-math>$%$</tex-math></inline-formula>.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"363-368"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144634713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-02DOI: 10.1109/TNANO.2025.3584828
Yu-Hsun Nien;Yu-Ping Wang
As the industrialization is improving by way of science and technology in society, water pollution has become increasingly serious. Non-degradable organic matter exists in wastewater, which causes environmental deterioration. In order to solve this problem, we select titanium dioxide (TiO2) as the photocatalyst material with high activity, chemical stability and low cost. However, pure TiO2 has a large band gap (3.2 eV) and can only be activated under ultraviolet (UV) light. Therefore, TiO2 has to be modified to fit our requirement. Carbon dots (CDs) have up-conversion and down-conversion photoluminescence and inhibit the recombination of electron-hole pairs, Adding CDs can reduce the band gap width of TiO2, and increase the absorption of visible light significantly, thereby improving photocatalytic efficiency. We use citric acid as the carbon source and urea as the nitrogen source to prepare CDs by using the hydrothermal method, and prepare the CDs/TiO2 composite photocatalyst through the sol-gel method. The CDs/TiO2 composite photocatalyst shows stable and efficient photocatalytic performance for removal of methylene blue (MB), with a removal rate of 95.34%. In order to reuse the CDs/TiO2 composite photocatalyst powder, we use electrospinning technology to combine CDs/TiO2 composite photocatalyst with nylon 6,6 nanofibrous membranes. After three cycle tests, we confirm that it is recyclable and practical, and its removal rate is also increased to 99.39%.
{"title":"Preparation of Nanofibrous Membranes Containing Carbon Dots Composited With TiO2 Photocatalyst and Their Removal Rate of Methylene Blue Under Visible Light","authors":"Yu-Hsun Nien;Yu-Ping Wang","doi":"10.1109/TNANO.2025.3584828","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584828","url":null,"abstract":"As the industrialization is improving by way of science and technology in society, water pollution has become increasingly serious. Non-degradable organic matter exists in wastewater, which causes environmental deterioration. In order to solve this problem, we select titanium dioxide (TiO<sub>2</sub>) as the photocatalyst material with high activity, chemical stability and low cost. However, pure TiO<sub>2</sub> has a large band gap (3.2 eV) and can only be activated under ultraviolet (UV) light. Therefore, TiO<sub>2</sub> has to be modified to fit our requirement. Carbon dots (CDs) have up-conversion and down-conversion photoluminescence and inhibit the recombination of electron-hole pairs, Adding CDs can reduce the band gap width of TiO<sub>2</sub>, and increase the absorption of visible light significantly, thereby improving photocatalytic efficiency. We use citric acid as the carbon source and urea as the nitrogen source to prepare CDs by using the hydrothermal method, and prepare the CDs/TiO<sub>2</sub> composite photocatalyst through the sol-gel method. The CDs/TiO<sub>2</sub> composite photocatalyst shows stable and efficient photocatalytic performance for removal of methylene blue (MB), with a removal rate of 95.34%. In order to reuse the CDs/TiO<sub>2</sub> composite photocatalyst powder, we use electrospinning technology to combine CDs/TiO<sub>2</sub> composite photocatalyst with nylon 6,6 nanofibrous membranes. After three cycle tests, we confirm that it is recyclable and practical, and its removal rate is also increased to 99.39%.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"338-346"},"PeriodicalIF":2.1,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-01DOI: 10.1109/TNANO.2025.3584854
P. Agilandeswari;G. Thavasi Raja;R. Rajasekar
In this paper, the novel deep learning-based nano scale optical filter is designed with narrow bandwidth for 6G network and Dense Wavelength Division Multiplexing (DWDM) systems. The hybrid Long Short-Term Memory Neural Network (LSTM-NN)-transformer based deep learning algorithm is implemented to accurately predict the structural parameter of the optical bandpass filter. The inverse design approach-based hybrid deep learning model is designed to improve the performance of the optical bandpass filter. The photonic filter performance parameters are numerically analyzed by Finite Difference Time Domain (FDTD) method. The proposed hybrid model is designed with very low mean square error of 5.4207 × 10−8 and less computation time of 834.81 seconds. The presented photonics platform is designed with narrow bandwidth of 1.12 THz and footprint is very compact as about 134 μm2. Therefore, the proposed optical filter is highly suitable for photonic integrated circuits and lightwave communication systems.
{"title":"Deep Learning Based Inverse Design of Nanoscale Optical Bandpass Filter for Sub-THz 6G Network","authors":"P. Agilandeswari;G. Thavasi Raja;R. Rajasekar","doi":"10.1109/TNANO.2025.3584854","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584854","url":null,"abstract":"In this paper, the novel deep learning-based nano scale optical filter is designed with narrow bandwidth for 6G network and Dense Wavelength Division Multiplexing (DWDM) systems. The hybrid Long Short-Term Memory Neural Network (LSTM-NN)-transformer based deep learning algorithm is implemented to accurately predict the structural parameter of the optical bandpass filter. The inverse design approach-based hybrid deep learning model is designed to improve the performance of the optical bandpass filter. The photonic filter performance parameters are numerically analyzed by Finite Difference Time Domain (FDTD) method. The proposed hybrid model is designed with very low mean square error of 5.4207 × 10<sup>−8</sup> and less computation time of 834.81 seconds. The presented photonics platform is designed with narrow bandwidth of 1.12 THz and footprint is very compact as about 134 μm<sup>2</sup>. Therefore, the proposed optical filter is highly suitable for photonic integrated circuits and lightwave communication systems.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"347-355"},"PeriodicalIF":2.1,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-30DOI: 10.1109/TNANO.2025.3584047
Aman Shekhar;Sanjoy Mandal
This paper presents a novel design and performance analysis of a modified double-ring resonator (MDRR) integrated with high contrast optical Bragg grating (HCOBG) structure functioning as an optical filter and a biosensor. The MATLAB environment is used to analyze the configuration’s output, and the finite-difference time-domain (FDTD) numerical approach is employed to model the configuration as a biosensor. The grating-assisted Modified Double Ring Resonator is optimized for precise filtering in optical communication systems and high sensitivity in biosensing applications. Sufficiently large free spectral range (FSR) with high biosensing sensitivity and figure of merit (FOM) of 1057.094 nm per refractive index unit (RIU) and 107.003 RIU$^{-1}$ respectively, the proposed configuration demonstrates potential for high-performance optical filtering for dense wavelength division multiplexing (DWDM) systems as well as improved biosensing for critical biomedical applications.
{"title":"Design and Analysis of Modified Double Ring Resonator With Embedded High Contrast Optical Bragg Grating as an Optical Filter and a Biosensor","authors":"Aman Shekhar;Sanjoy Mandal","doi":"10.1109/TNANO.2025.3584047","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3584047","url":null,"abstract":"This paper presents a novel design and performance analysis of a modified double-ring resonator (MDRR) integrated with high contrast optical Bragg grating (HCOBG) structure functioning as an optical filter and a biosensor. The MATLAB environment is used to analyze the configuration’s output, and the finite-difference time-domain (FDTD) numerical approach is employed to model the configuration as a biosensor. The grating-assisted Modified Double Ring Resonator is optimized for precise filtering in optical communication systems and high sensitivity in biosensing applications. Sufficiently large free spectral range (FSR) with high biosensing sensitivity and figure of merit (FOM) of 1057.094 nm per refractive index unit (RIU) and 107.003 RIU<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula> respectively, the proposed configuration demonstrates potential for high-performance optical filtering for dense wavelength division multiplexing (DWDM) systems as well as improved biosensing for critical biomedical applications.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"330-337"},"PeriodicalIF":2.1,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144606427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vertical silicon nanowire transistors are among the most promising device concepts for future low-power electronics due to their gate-all-around nature as well as their 3D stacking potential. In this work we review the current status of transistor fabrication on vertical silicon nanostructures and identify the most important challenges for successful process integration. Channel patterning, source/drain contact formation, gate-deposition and spacer engineering are identified as key steps independent on the actual process integration sequence. We conclude the paper with two emerging device examples and discuss the influence of the processing challenges on the transistor design.
{"title":"Recent Challenges in the Fabrication of Vertical Silicon Nanowire Transistors","authors":"Cigdem Cakirlar;Jonas Müller;Christoph Beyer;Konstantinos Moustakas;Bruno Neckel Wesling;Giulio Galderisi;Sylvain Pelloquin;Cristell Maneux;Thomas Mikolajick;Guilhem Larrieu;Jens Trommer","doi":"10.1109/TNANO.2025.3582023","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3582023","url":null,"abstract":"Vertical silicon nanowire transistors are among the most promising device concepts for future low-power electronics due to their gate-all-around nature as well as their 3D stacking potential. In this work we review the current status of transistor fabrication on vertical silicon nanostructures and identify the most important challenges for successful process integration. Channel patterning, source/drain contact formation, gate-deposition and spacer engineering are identified as key steps independent on the actual process integration sequence. We conclude the paper with two emerging device examples and discuss the influence of the processing challenges on the transistor design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"356-362"},"PeriodicalIF":2.1,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144634629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-20DOI: 10.1109/TNANO.2025.3581782
Parveen Kumar;Balwinder Raj;Girish Wadhwa
An analytical model of nanowire-tunnel field effect transistor (NWTFET) has been developed in this article with a gate-all-around structure and band-to-band tunneling (BTBT) mechanism. The proposed model is effective for operation in all regions such as source, drain, channel and measures accurate potential, transfer characteristics and is immune to short channel effect. The drain current and surface potential have been evaluated with the variation in metal work function, doping concentration, oxide thickness and channel material at different bias conditions (VDS and VGS). The validation of observed results has been performed through TCAD simulations. The surface potential model is designed by separating the substrate of silicon into three dissimilar areas (I, II, III) and determining the 2-D Poisson’s equation (PE) in other areas. To utilize Poisson’s Equation appropriately at various boundary conditions, a descriptive parabolic approximation strategy is used.
{"title":"Analytical Modeling and Simulation Investigation of Nanowire Tunnel FET for Potential and Drain Current Evaluation","authors":"Parveen Kumar;Balwinder Raj;Girish Wadhwa","doi":"10.1109/TNANO.2025.3581782","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3581782","url":null,"abstract":"An analytical model of nanowire-tunnel field effect transistor (NWTFET) has been developed in this article with a gate-all-around structure and band-to-band tunneling (BTBT) mechanism. The proposed model is effective for operation in all regions such as source, drain, channel and measures accurate potential, transfer characteristics and is immune to short channel effect. The drain current and surface potential have been evaluated with the variation in metal work function, doping concentration, oxide thickness and channel material at different bias conditions (V<sub>DS</sub> and V<sub>GS</sub>). The validation of observed results has been performed through TCAD simulations. The surface potential model is designed by separating the substrate of silicon into three dissimilar areas (I, II, III) and determining the 2-D Poisson’s equation (PE) in other areas. To utilize Poisson’s Equation appropriately at various boundary conditions, a descriptive parabolic approximation strategy is used.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"323-329"},"PeriodicalIF":2.1,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144597741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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