Pub Date : 2024-07-01DOI: 10.1109/TNANO.2024.3421263
Been Kwak;Daewoong Kwon;Hyunwoo Kim
This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage ( V TH ). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current (I SC ), 2) channel-to-drain currents ( I CD ), and 3) I SC and I CD . Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.
{"title":"Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor","authors":"Been Kwak;Daewoong Kwon;Hyunwoo Kim","doi":"10.1109/TNANO.2024.3421263","DOIUrl":"10.1109/TNANO.2024.3421263","url":null,"abstract":"This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage (\u0000<italic>V</i>\u0000<sub>TH</sub>\u0000). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current \u0000<italic>(I</i>\u0000<sub>SC</sub>\u0000), 2) channel-to-drain currents (\u0000<italic>I</i>\u0000<sub>CD</sub>\u0000), and 3) \u0000<italic>I</i>\u0000<sub>SC</sub>\u0000 and \u0000<italic>I</i>\u0000<sub>CD</sub>\u0000. Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"562-566"},"PeriodicalIF":2.1,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-28DOI: 10.1109/TNANO.2024.3420249
Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro
This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.
{"title":"Core Reversal in Vertically Coupled Vortices: Simulation and Experimental Study","authors":"Abbass Hamadeh;Abbas Koujok;Salvatore Perna;Davi R. Rodrigues;Alejandro Riveros;Vitaliy Lomakin;Giovanni Finocchio;Grégoire de Loubens;Olivier Klein;Philipp Pirro","doi":"10.1109/TNANO.2024.3420249","DOIUrl":"10.1109/TNANO.2024.3420249","url":null,"abstract":"This study conducts a comprehensive investigation into the reversal mechanism of magnetic vortex cores in a nanopillar system composed of two coupled ferromagnetic dots under zero magnetic field conditions. The research employs a combination of experimental and simulation methods to gain a deeper understanding of the dynamics of magnetic vortex cores. The findings reveal that by applying a constant direct current, the orientation of the vortex cores can be manipulated, resulting in a switch in one of the dots at a specific current value. The micromagnetic simulations provide evidence that this switch is a consequence of a deformation in the vortex profile caused by the increasing velocity of the vortex cores resulting from the constant amplitude of the trajectory as frequency increases. These findings offer valuable new insights into the coupled dynamics of magnetic vortex cores and demonstrate the feasibility of manipulating their orientation using direct currents under zero magnetic field conditions. The results of this study have potential implications for the development of vortex-based non-volatile memory technologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"549-553"},"PeriodicalIF":2.1,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141504397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-19DOI: 10.1109/TNANO.2024.3416509
Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou
Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.
机器视觉作为人工智能的重要组成部分，在尺寸测量、质量控制、自动驾驶等方面具有重要影响。本研究提出了一种由氮化镓（GaN）纳米线（NW）n-i-n 光电探测器（PD）实现的高性能紫外线（UV）成像和检测系统。基于氮化镓纳米线的最高光电特性，包括 5098 A/W 的高响应率、4.88 pA 的低暗电流和 1223 的光暗电流比，由氮化镓纳米线阵列组成的机器视觉系统可实现 96.21% 的精确度。此外，还讨论了人工神经网络（ANN）和卷积神经网络（CNN）在这种机器视觉系统中的可行性。可视化过程表明，在图像识别方面，CNN 优于 ANN 的原因在于其提取空间信息和特征的能力。这些研究成果为基于氮化镓氮化瓦 PD 的机器视觉系统的传感器和算法的开发提供了重要启示，激发了对紫外图像检测和其他人工智能领域的进一步研究。
{"title":"GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System","authors":"Haitao Du;Yu Zhang;Junmin Zhou;Jiaxiang Chen;Wenbo Ye;Xu Zhang;Qifeng Lyu;Hongzhi Wang;Kei May Lau;Xinbo Zou","doi":"10.1109/TNANO.2024.3416509","DOIUrl":"10.1109/TNANO.2024.3416509","url":null,"abstract":"Machine vision as an essential component of artificial intelligence poses a significant influence on dimension measurement, quality control, autonomous driving, and so on. In this study, a high-performance ultraviolet (UV) imaging and detection system enabled by Gallium Nitride (GaN) nanowire (NW) n-i-n photodetector (PD) is presented. Based on supreme optoelectronic properties of the NW, including high responsivity of 5098 A/W, a low dark current of 4.88 pA and a photo-to-dark current ratio of 1223, machine vision system composed of a GaN NW array could achieve an accuracy of 96.21%. Furthermore, feasibility of artificial neural network (ANN) and convolutional neural network (CNN) in such a machine vision system is discussed, featuring dim and noisy environment. The visualization process shows that the superiority of CNN over ANN in image recognition is attributed to the capability of extracting spatial information and characteristics. The research results provide important insight into the development of both sensors and algorithms for machine vision systems based on GaN NW PD, inspiring further investigation into UV image detection and other areas of artificial intelligence.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"529-534"},"PeriodicalIF":2.1,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The molecular Field-Coupled Nanocomputing (molFCN) paradigm encodes digital information in the charge distribution of molecules. The information propagates through electrostatic coupling within molecules, permitting minimal power consumption. Although the promising results in the design of molFCN circuits, a prototype is missing. Therefore, this work moves toward molFCN fabrication by presenting a methodology combining Finite Element Modelling with the SCERPA tool, boosting the simulation accuracy by considering both molecule and device physics. First, this work analyzes nano-trench-based molFCN single-line wires, examining information propagation dependencies on the nano-trench geometries. Then, the analysis of nano-trench-based multi-line wires points out the primary prototype specification to achieve this advantageous molFCN solution. Finally, we demonstrate the nano-trench as a valuable solution to achieve the write-in mechanism. Overall, this paper paves the way for molFCN fabrication-aware simulations for future prototyping.
{"title":"Technology-Aware Simulation for Prototyping Molecular Field-Coupled Nanocomputing","authors":"Federico Ravera;Yuri Ardesi;Gianluca Piccinini;Mariagrazia Graziano","doi":"10.1109/TNANO.2024.3415790","DOIUrl":"10.1109/TNANO.2024.3415790","url":null,"abstract":"The molecular Field-Coupled Nanocomputing (molFCN) paradigm encodes digital information in the charge distribution of molecules. The information propagates through electrostatic coupling within molecules, permitting minimal power consumption. Although the promising results in the design of molFCN circuits, a prototype is missing. Therefore, this work moves toward molFCN fabrication by presenting a methodology combining Finite Element Modelling with the SCERPA tool, boosting the simulation accuracy by considering both molecule and device physics. First, this work analyzes nano-trench-based molFCN single-line wires, examining information propagation dependencies on the nano-trench geometries. Then, the analysis of nano-trench-based multi-line wires points out the primary prototype specification to achieve this advantageous molFCN solution. Finally, we demonstrate the nano-trench as a valuable solution to achieve the write-in mechanism. Overall, this paper paves the way for molFCN fabrication-aware simulations for future prototyping.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"521-528"},"PeriodicalIF":2.1,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10561616","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1109/TNANO.2024.3415382
Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell
Hardware neural networks (HNNs) based on crossbar arrays are expected to be energy-efficient computing architectures for solving complex tasks due to their small feature sizes. Although there exist software libraries able to deal with circuit simulation of memristor networks, they still exceed the memory available of any consumer grade GPU's VRAM for large scale crossbar arrays while having a significant computational complexity. This work discusses an iterative method to implement a fast simulation of the corresponding memristor crossbar array with much more limited memory use.
{"title":"Memristor Crossbar Array Simulation for Deep Learning Applications","authors":"Elvis Díaz Machado;Jose Lopez Vicario;Enrique Miranda;Antoni Morell","doi":"10.1109/TNANO.2024.3415382","DOIUrl":"10.1109/TNANO.2024.3415382","url":null,"abstract":"Hardware neural networks (HNNs) based on crossbar arrays are expected to be energy-efficient computing architectures for solving complex tasks due to their small feature sizes. Although there exist software libraries able to deal with circuit simulation of memristor networks, they still exceed the memory available of any consumer grade GPU's VRAM for large scale crossbar arrays while having a significant computational complexity. This work discusses an iterative method to implement a fast simulation of the corresponding memristor crossbar array with much more limited memory use.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"512-515"},"PeriodicalIF":2.1,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10559273","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141516961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1109/TNANO.2024.3415396
Ehsan Rahimi
Molecular quantum cellular automata (QCA) provides a paradigm for molecular electronics in which the configuration of charges at reduction-oxidation centers of molecules encodes binary information, and the electrostatic forces enable performing logic operations at the molecular scale. Cosmic rays or impurities in packaging materials can cause electric charges to tunnel into a QCA cell, leading to single-event upset (SEU). The effect of SUE on the functionality of a majority gate comprised of a QCA cell, in which two cationic molecular dimers interact through intermolecular Coulomb forces, is analyzed using the Hubbard model and full quantum chemical calculations. For this purpose, we introduce a complementary input model within a minimal framework for the molecular QCA majority gate. The response function of a single-input QCA cell and the polarization table of a three-input majority gate are evaluated in normal and SEU operation modes using the complementary input model in conjunction with the Hubbard model and quantum chemical calculations. The ab initio results indicate the possibility of designing SEU fault-tolerant QCA devices.
分子量子蜂窝自动机（QCA）为分子电子学提供了一种范例，在这种范例中，分子还原-氧化中心的电荷配置编码二进制信息，而静电力能够在分子尺度上执行逻辑运算。宇宙射线或封装材料中的杂质会导致电荷隧穿进入 QCA 单元，从而引发单事件干扰（SEU）。我们利用哈伯德模型和全量子化学计算分析了 SUE 对由 QCA 单元（其中两个阳离子分子二聚体通过分子间库仑力相互作用）组成的多数栅功能的影响。为此，我们在分子 QCA 多路门的最小框架内引入了一个互补输入模型。利用互补输入模型以及哈伯德模型和量子化学计算，在正常和 SEU 运行模式下评估了单输入 QCA 单元的响应函数和三输入多数门的极化表。ab initio 结果表明了设计 SEU 容错 QCA 器件的可能性。
{"title":"Single-Event Upset in Molecular Quantum Cellular Automata","authors":"Ehsan Rahimi","doi":"10.1109/TNANO.2024.3415396","DOIUrl":"https://doi.org/10.1109/TNANO.2024.3415396","url":null,"abstract":"Molecular quantum cellular automata (QCA) provides a paradigm for molecular electronics in which the configuration of charges at reduction-oxidation centers of molecules encodes binary information, and the electrostatic forces enable performing logic operations at the molecular scale. Cosmic rays or impurities in packaging materials can cause electric charges to tunnel into a QCA cell, leading to single-event upset (SEU). The effect of SUE on the functionality of a majority gate comprised of a QCA cell, in which two cationic molecular dimers interact through intermolecular Coulomb forces, is analyzed using the Hubbard model and full quantum chemical calculations. For this purpose, we introduce a complementary input model within a minimal framework for the molecular QCA majority gate. The response function of a single-input QCA cell and the polarization table of a three-input majority gate are evaluated in normal and SEU operation modes using the complementary input model in conjunction with the Hubbard model and quantum chemical calculations. The \u0000<italic>ab initio</i>\u0000 results indicate the possibility of designing SEU fault-tolerant QCA devices.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"541-548"},"PeriodicalIF":2.1,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141539199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we investigated the effects of microwave thermal annealing (MWA) on the electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors (TFTs). Under MWA treatment at 600 W, the IWO-TFTs exhibited a subthreshold swing (SS) of 144 mV/dec and a threshold voltage (V T ) of 0.9 V, demonstrating superior resistance to stress-induced degradation. The TFTs treated with MWA displayed enhanced performance compared to the as-fabricated ones in bias stress stability. As a result, MWA showed significant potential for repairing defects through post-deposition annealing with a reduced thermal budget, thereby presenting a promising application for developing back-end-of-line (BEOL) compatible oxide semiconductor technology.
在这项工作中，我们研究了微波热退火（MWA）对氧化铟-钨（IWO）薄膜晶体管（TFT）电性能和稳定性的影响。在 600 W 的 MWA 处理条件下，IWO-TFT 的亚阈值摆幅 (SS) 为 144 mV/dec，阈值电压 (VT) 为 0.9 V，显示出卓越的抗应力诱导降解能力。经 MWA 处理的 TFT 在偏压应力稳定性方面的性能比原样制造的 TFT 更强。因此，MWA 在通过沉积后退火修复缺陷方面显示出了巨大的潜力，同时降低了热预算，从而为开发兼容线后端（BEOL）的氧化物半导体技术带来了广阔的应用前景。
{"title":"High-Stability IWO Thin-Film Transistors Under Microwave Annealing for Low Thermal Budget Application","authors":"Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Hui-Hsuan Li;Meng-Chien Lee;Yu-Hsien Lin;Chao-Hsin Chien","doi":"10.1109/TNANO.2024.3413794","DOIUrl":"10.1109/TNANO.2024.3413794","url":null,"abstract":"In this work, we investigated the effects of microwave thermal annealing (MWA) on the electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors (TFTs). Under MWA treatment at 600 W, the IWO-TFTs exhibited a subthreshold swing (SS) of 144 mV/dec and a threshold voltage (V\u0000<sub>T</sub>\u0000) of 0.9 V, demonstrating superior resistance to stress-induced degradation. The TFTs treated with MWA displayed enhanced performance compared to the as-fabricated ones in bias stress stability. As a result, MWA showed significant potential for repairing defects through post-deposition annealing with a reduced thermal budget, thereby presenting a promising application for developing back-end-of-line (BEOL) compatible oxide semiconductor technology.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"516-520"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141516962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, hydrogen sensors based on In 2 O 3 /ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H 2 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.
{"title":"Polypeptide-Regulated the Self-Assembled In2O3/ZnO Nanocubes for Enhanced H2 Gas Sensing at Low Operating Temperatures","authors":"Haoting Zhang;Jiahui Jin;Zhiqiang Yang;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2024.3413719","DOIUrl":"10.1109/TNANO.2024.3413719","url":null,"abstract":"In this study, hydrogen sensors based on In\u0000<sub>2</sub>\u0000O\u0000<sub>3</sub>\u0000/ZnO nanocubes are fabricated by single step hydrothermal route, and polypeptide is utilized to guide the morphology of the composites to heighten the responsiveness of the sensors to hydrogen at low operating temperatures. A series of analyses and validations are carried out by characterization techniques. Gas sensitivity test results display that the optimal operating temperature of the modified sensing element is reduced by 60 °C compared to the initial element, accompanied by a doubling of the response value (22.12). At the same time, the response time to 100 ppm H\u0000<sub>2</sub>\u0000 is 2.5 s. Even more strikingly, the modified gas sensing element has evidently improved the response speed to low-ppm levels hydrogen. Moreover, the sensor components exhibit favorable repeatability, stability and excellent selectivity. By analyzing the characterization data and gas-sensitive test results, the improved responsiveness of the sensing elements is mainly attributed to the synergistic effect of the dilatation in the specific surface area of the gas-sensitive materials and the increase in intergranular contacts.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"500-511"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO $_{3}$ (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.
{"title":"Understanding Stochastic Behavior of Self- Rectifying Memristors for Error-Corrected Physical Unclonable Functions","authors":"Xianyue Zhao;Jonas Ruchti;Christoph Frisch;Kefeng Li;Ziang Chen;Stephan Menzel;Rainer Waser;Heidemarie Schmidt;Ilia Polian;Michael Pehl;Nan Du","doi":"10.1109/TNANO.2024.3413888","DOIUrl":"10.1109/TNANO.2024.3413888","url":null,"abstract":"Physical Unclonable Functions (PUFs) have gained widespread attention for their secure key storage, authentication, and anti-counterfeiting applications. While traditional PUFs based on Complementary Metal-Oxide-Semiconductor (CMOS) have been extensively studied, the emergence of memristors offers new opportunities due to their inherent device variations and distinctive resistive switching behaviors. This study explores the construction of reliable PUFs using self-rectifying analog BiFeO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 (BFO) memristors. We assess the raw bit error rate (rBER) of the BFO-based PUF under varying voltage challenges and classify the switching behavior into stochastic, transition, and deterministic regions. As the primary objective of this study, we identify the sources of stochastic behavior in the three distinct regions while investigating the physical switching mechanism in BFO cells. Additionally, we propose a key storage method based on memristor variability, including an error correction scheme to enhance the reliability of PUF. This research contributes to a comprehensive understanding of PUF reliability and the underlying sources of intrinsic stochastic behavior in memristive technology.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"490-499"},"PeriodicalIF":2.1,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.
本研究采用一种简单的水热溶液路线方法，在 95 °C、3 小时的条件下，在导电铟锡氧化物（ITO）基底上生长出垂直排列的氧化锌纳米棒（ZnO NR）阵列；此外，还采用一种低成本的光化学方法，在室温紫外线（UV）下将金纳米粒子（Au NPs）成功吸附在 NR 表面，用于场发射（FE）发射器。为了探索一维（1-D）纳米结构，研究人员进行了高分辨率透射电子显微镜（HR-TEM）、X 射线衍射（XRD）和场发射扫描电子显微镜（FE-SEM）测量。结果发现，NRs 几乎垂直于基底的 c 轴方向。能量色散 X 射线（EDX）结果显示，一维 NR 阵列的金浓度为 0.75%。含金纳米粒子和不含金纳米粒子的氧化锌纳米材料分别被标记为一维 Z@Au-3 和 Z@Au-0 NR。Z@Au-0 NR 器件的开启电场和有效场增强因子（β）分别为 4.56 V/μm 和 4902，Z@Au-3 NR 器件的开启电场和有效场增强因子分别为 3.25 V/μm 和 12955。同时，Z@Au-3 样品的斜率值（6.43）也低于 Z@Au-0 NR 样品的斜率值（17.01）。由此可见，金纳米粒子增强了发射器的 FE 特性。因此，所设计的带有惰性金氧化物的一维氧化锌样品是未来基于 FE 的器件应用的一个令人鼓舞的候选材料，可用于各种电子应用，如 FE 显示面板、X 射线源、光源和平行电子束显微镜。
{"title":"Characterization of Au Nanoparticles Adsorbed on 1-D ZnO Nanomaterials Through a Novel Photochemical Synthesis Way for Field- Emission Emitter Applications","authors":"Yen-Lin Chu;Sheng-Joue Young;Po-Kai Chen;Sandeep Arya;Tung-Te Chu","doi":"10.1109/TNANO.2024.3409631","DOIUrl":"10.1109/TNANO.2024.3409631","url":null,"abstract":"This work explores the growth of vertically aligned zinc oxide nanorod (ZnO NR) arrays on a conductive indium-tin-oxide (ITO) substrate by using a simple hydrothermal solution route method at 95 °C for 3 h. Additionally, the gold nanoparticles (Au NPs) were victoriously adsorbed on the NR surface through a low-cost photochemical method under ultraviolet (UV) light at room temperature for field-emission (FE) emitters. To explore one-dimensional (1-D) nanostructures, high-resolution transmission electron microscope (HR-TEM), X-ray diffraction (XRD), and field-emission scanning electron microscope (FE-SEM) measurement were conducted. It was found that the NRs were almost perpendicular to the substrate with c-axis direction. The Au concentration of the 1-D NR array was 0.75 at% in energy-dispersive X-ray (EDX) result. ZnO nanomaterials with and without Au NPs were labelled 1-D Z@Au-3 and Z@Au-0 NRs, respectively. The turn-on electric field and effective field enhancement factor (β) of the Z@Au-0 NR devices were 4.56 V/μm and 4902, and those of the Z@Au-3 NR devices were 3.25 V/μm and 12955, respectively. Meanwhile, the slope value of the Z@Au-3 sample (6.43) was also lower than that of the Z@Au-0 NR sample (17.01). It can be seen that the Au NPs enhanced the FE property of the emitter. As a result, the designed 1-D ZnO samples with noble Au NPs are an encouraging candidate in future FE-based device applications, which can use in various electronic applications such as FE display panels, X-ray sources, light sources, and parallel electron beam microscopes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"478-481"},"PeriodicalIF":2.1,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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