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Analytical Model of the Parallel-Connected Silicon Carbide MOSFET Turn-ON Switching Behavior Under Asynchronous Gate Signals 异步栅极信号下并联碳化硅MOSFET导通行为的解析模型
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9941859
Chen Wang, Shuang Zhao, Jianing Wang, Helong Li, Yuqi Wei, H. Mantooth
Parallel-connected power device is an extensively applied solution in the industry to increase the current rating of the converter system compared with using high-power modules. However, due to the undesired PCB layout or semiconductor fabrication tolerance, mismatched drain-source current (Ids) which speeds up the aging process of a specific device can be introduced. The application of silicon carbide (SiC) devices aggravates this problem due to their higher switching speed. Asynchronous gate signal delay brought by the different driver chip propagation delay, gate loop parasitic inductance, or asynchronous PWM signal is a major reason of transient current imbalance. The analysis of its impact on switching performance is yet to be clarified. In this paper, different types of current imbalance of parallel connected MOSFET are analyzed. An accurate analytical model for deriving the turn-on switching trajectory of parallel-connected SiC MOSFETs under different gate signal delay time is firstly proposed. With the proposed model, the important performance indicators such as turn-on switching energy loss, current stress can be derived with the trajectory model. Experimental study is conducted to validate the proposed model.
与使用大功率模块相比,并联电源器件是一种广泛应用于工业的解决方案,可以提高变换器系统的额定电流。然而,由于不希望的PCB布局或半导体制造公差,漏源电流(Ids)不匹配会加速特定器件的老化过程。碳化硅(SiC)器件的应用由于其更高的开关速度而加剧了这一问题。不同驱动芯片的传播延迟、门环寄生电感或异步PWM信号带来的异步门信号延迟是暂态电流不平衡的主要原因。其对开关性能的影响分析尚不明确。本文分析了并联MOSFET中不同类型的电流不平衡。提出了一种精确的分析模型,用于推导不同栅极信号延迟时间下并联SiC mosfet的导通开关轨迹。利用该模型,可以推导出导通开关能量损耗、电流应力等重要性能指标。实验研究验证了该模型的有效性。
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引用次数: 2
Auxiliary Motor Drive Based on Three-phase Onboard Battery Charger 基于三相车载电池充电器的辅助电机驱动
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9941975
Boyang Li, Jialou Gao, Yuan Xie, Min Zhou, Dong Jiang
This paper introduces an auxiliary motor drive solution based on three-phase onboard battery charger to improve drive capability. The specific scheme of the control strategy is given by circuit analysis and modeling. The proposed scheme reduces the current stress on the driving inverter, increases the total converter output current, achieves fault tolerance, and improves the dynamic response performance based on mathematical model analysis. Besides, the improvements need few additional components, so that the cost is quite low. The above functions have been verified by experiments or simulations.
本文介绍了一种基于三相车载电池充电器的辅助电机驱动方案,以提高驱动性能。通过电路分析和建模,给出了控制策略的具体方案。该方案在数学模型分析的基础上,减小了驱动逆变器的电流应力,增加了变流器的总输出电流,实现了容错,提高了动态响应性能。此外,改进需要的额外组件很少,因此成本很低。上述功能均已通过实验或仿真验证。
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引用次数: 1
A Zero-sequence Current Suppression strategy for Five-phase Open-end Winding PMSM with Vector Proportional Integral Controller 基于矢量比例积分控制的五相开口绕组PMSM零序电流抑制策略
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9942080
Chunyang Jiang, Hongchen Liu, Xinsheng Zhang, Youzheng Wang, Chaochao Li
Multiphase open-end winding permanent magnet synchronous motor (OEW-PMSM) has many advantages, such as high power density, reduced torque ripples and high reliability. However, the dual inverter system with common DC bus has a zero-sequence path and causes the zero-sequence circuiting current. The zero-sequence current (ZSC) produces system losses and torque ripples. In order to achieve a high performance of the motor, the model of a five-phase OEW-PMSM is built. The model contains the zero-sequence component, which does not exist in conventional PMSM model. Then a vector proportional integral controller is designed to suppress the ZSC in the system. The simulation and experiment results prove that the vector proportional integral controller has a good performance of suppressing the ZSC.
多相开放式绕组永磁同步电动机具有功率密度高、转矩波动小、可靠性高等优点。但是,采用普通直流母线的双逆变系统存在零序路径,产生零序回路电流。零序电流(ZSC)会产生系统损耗和转矩波动。为了实现电机的高性能,建立了五相OEW-PMSM的模型。该模型包含了传统永磁同步电机模型中不存在的零序分量。然后设计了一个矢量比例积分控制器来抑制系统中的ZSC。仿真和实验结果表明,矢量比例积分控制器具有良好的抑制ZSC的性能。
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引用次数: 0
A Novel Force Control Method for Dead Centers Tracking of Free-Piston Linear Generator 一种新的自由活塞直线发电机死点跟踪力控制方法
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9941780
Chuang Chen, P. Zheng, Chengde Tong, Jing Shang, Bo Liu
Free-piston linear generator (FPLG) has attracted wide attention for its potential in electric vehicle applications. A significant characteristic of FPLG is that it cancels the crank-slider mechanism, allowing variable compression ratio and higher overall efficiency. However, the absence of mechanical limits makes the stable operation of engine so difficult. The control of piston motion needs to conquer the frequent combustion variations to ensure accurate dead center positions so that the engine can continuously stay within the normal operating range. This paper proposes a force control method for the linear generator of FPLG to accurately maintain the dead centers. The control variables are obtained through modeling of the piston motion profiles. The electromagnetic force of LEM is regulated by specifying the q-axis reference current through feedback mechanism. The control effect of the control scheme was verified through experimental tests.
自由活塞直线发电机(FPLG)因其在电动汽车上的应用潜力而受到广泛关注。FPLG的一个显著特点是它取消了曲柄滑块机构,允许可变压缩比和更高的整体效率。然而,由于缺乏机械限制,使得发动机的稳定运行变得非常困难。活塞运动控制需要克服频繁的燃烧变化,以保证准确的止点位置,使发动机持续保持在正常工作范围内。本文提出了一种用于FPLG直线发生器的力控制方法,以实现对死点的精确控制。通过对活塞运动曲线的建模,得到了控制变量。LEM的电磁力通过反馈机制指定q轴参考电流来调节。通过实验验证了该控制方案的控制效果。
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引用次数: 0
Deep Q-Network based Adaptive Robustness Parameters for Virtual Synchronous Generator 基于深度q网络的虚拟同步发电机鲁棒性自适应参数
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9941893
Wenjie Wu, Feng Guo, Qiulong Ni, Xing Liu, Lin Qiu, Youtong Fang
This paper investigates a reinforcement learning based adaptive robustness parameter tunning approach for the virtual synchronous generator (VSG). Particularly, a deep Q-network (DQN) algorithm is employed to realize the real-time parameter tuning of inertia and damping coefficient in the VSG controller. The proposed parameter tuning approach is confirmed by the simulation results and compared with the conventional VSG controller with fixed parameters.
研究了一种基于强化学习的虚拟同步发电机鲁棒性参数自适应整定方法。其中,采用深度q -网络(deep Q-network, DQN)算法实现了VSG控制器中惯量和阻尼系数的实时参数整定。仿真结果验证了所提出的参数整定方法的有效性,并与常规的固定参数VSG控制器进行了比较。
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引用次数: 1
Extreme Fast Charging Station for Multiple Vehicles with Sinusoidal Currents at the Grid Side 电网侧具有正弦电流的多车快速充电站
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9942061
Dener A. L. Brandão, T. Parreiras, I. Pires, B. Filho
As the electrical vehicle fleet grows, extreme fast charging (XFC) stations for multiple vehicles will be increasingly needed. The challenges for the implementation of many XFC stations in the electric power system are many and it is necessary to use converters that reduce the negative impacts on the electric grid, meet the standards and recommendations, and that are technically and economically viable. This work proposes an XFC station for multiple vehicles that has a very low current harmonics injection at the grid side, with a Total Demand Distortion (TDD) of 0.62% without using sinusoidal filter, provides galvanic isolation for each input/output port, and can provide additional features such as Distributed Energy Resources (DER) integration and ancillary services. This is achieved by combining a bidirectional low switching frequency grid-connected active front-end with high switching frequency SiC-based dc/dc converters in the vehicles side. After a brief description of the proposed system and its control, simulation results are presented to validate the XFC.
随着电动汽车数量的增长,对多车超快速充电站的需求将越来越大。在电力系统中实施许多XFC站的挑战很多,有必要使用减少对电网的负面影响,符合标准和建议,并且在技术和经济上可行的转换器。这项工作提出了一种适用于多辆汽车的XFC站,该站在电网侧具有非常低的电流谐波注入,在不使用正弦滤波器的情况下,总需求失真(TDD)为0.62%,为每个输入/输出端口提供电流隔离,并可以提供分布式能源(DER)集成和辅助服务等附加功能。这是通过将双向低开关频率并网有源前端与车辆侧高开关频率基于sic的dc/dc转换器相结合来实现的。在简要描述了所提出的系统及其控制之后,给出了仿真结果来验证XFC。
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引用次数: 1
Thermal Analysis of Integrated Power Supply in Parallel with Si IGBT and SiC MOSFET Inverter Based on PLECS 基于PLECS的Si IGBT和SiC MOSFET逆变器并联集成电源的热分析
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9942168
Shen Che, Cheng Peng, Zishun Peng, Yuxing Dai, W. Hu
Inverters are an important part of the electric drive system of new energy electric vehicles. Complex working conditions and user demands put forward more demanding requirements on the capacity, efficiency, cost, power density and reliability of the main drive inverters of electric vehicles. It is difficult to take into account these performance indicators if the inverter is composed of silicon-based power devices or silicon carbide power devices alone. In order to solve these problems effectively, the integrated power supply composed of Si IGBT inverter and SiC MOSFET inverter in parallel is a feasible solution. Due to the coupling characteristics of different power devices, the related research of this structure is in the preliminary stage. Power loss and junction temperature parameters as key indicators of parallel integrated power supply are not fully and deeply studied. In this paper, the loss of the parallel structure under sinusoidal pulse width modulation is deduced and analyzed, and the circuit model and loss model are built in the simulation software PLECS. The simulation results and theoretical calculation results are verified each other, and the simulation results can be used as the basis for the heat dissipation design of the inverter. Aiming at the parallel structure of the inverter, a multi-objective mathematical model is proposed as the basis for device selection and load power design of the parallel inverter.
逆变器是新能源电动汽车电驱动系统的重要组成部分。复杂的工况条件和用户需求对电动汽车主传动逆变器的容量、效率、成本、功率密度和可靠性提出了更为苛刻的要求。如果逆变器仅由硅基功率器件或碳化硅功率器件组成,则很难兼顾这些性能指标。为了有效地解决这些问题,将硅IGBT逆变器与硅MOSFET逆变器并联构成集成电源是一种可行的解决方案。由于不同功率器件的耦合特性,该结构的相关研究尚处于初级阶段。作为并联集成电源的关键指标,功耗和结温参数的研究还不够充分和深入。本文推导并分析了正弦脉宽调制下并联结构的损耗,并在PLECS仿真软件中建立了电路模型和损耗模型。仿真结果与理论计算结果相互验证,仿真结果可作为逆变器散热设计的依据。针对逆变器的并联结构,提出了一种多目标数学模型,作为并联逆变器器件选择和负载功率设计的依据。
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引用次数: 0
Study on the Effect of Composite Sleeve on Rotor Loss of High-Speed PM BLDC 复合套筒对高速永磁无刷直流电机转子损耗影响的研究
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9941926
Luo Chao, Jien Ma, Bowen Xu, Qiu Lin, Xing Liu, Youtong Fang
High-speed permanent magnet brushless dc (PM BLDC) motors rotor is typically protected with a nonmagnetic retaining sleeve. In this paper, a composite sleeve structure with an inner layer of titanium alloy and an outer layer of carbon fiber is designed. It is mechanically robust and present low eddy current loss with the new sleeve. In addition, eddy current loss and torque might be significant in the rotor of a PM BLDC motor and are comparatively analyzed by modifying the thickness of both materials of the new sleeve. After that, to address the problem of increased eddy current losses in PM due to the new sleeve, a composite sleeve with copper shielding is investigated. For the composite sleeve with a copper shield, the effects of the copper shield’s positions and thickness on the rotor losses are studied. Finally, the range of preferred composite sleeve structures is summarized.
高速永磁无刷直流(PM BLDC)电机转子通常采用非磁性护套保护。本文设计了一种内层为钛合金,外层为碳纤维的复合套管结构。它是机械坚固和呈现低涡流损耗与新的套筒。此外,通过改变两种材料的厚度,对永磁无刷直流电机转子的涡流损耗和转矩进行了比较分析。之后,为了解决新套筒导致永磁涡流损耗增加的问题,研究了一种带铜屏蔽的复合套筒。针对带铜屏蔽层的复合套筒,研究了铜屏蔽层位置和厚度对转子损失的影响。最后总结了复合套筒结构的优选范围。
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引用次数: 0
Steady-State Modeling for LCC Resonant Converter with Phase Shift Modulation Based on Simplified State Trajectory 基于简化状态轨迹的移相调制LCC谐振变换器稳态建模
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9941955
Shuhao Yang, Dan Wang, Hao Wu, Kun Wang, Saijun Mao, Hongyao Liu
The behavior of phase shift modulation (PSM) of LCC series-parallel resonant converter (LCC-SPRC) applied to high voltage (HV) DC pulsed power supply is analyzed in this paper, and three simplified state trajectory mathematical models for LCC SPRC with PSM is established. A method for solving the approximate numerical solution of each mode duration is proposed, by which the accurate mode switching points can be obtained. The accuracy of the modeling method and the approximate numerical solution method are verified by simulations and experiments with a 1.5kW prototype.
分析了应用于高压直流脉冲电源的LCC串并联谐振变换器(LCC-SPRC)相移调制(PSM)的特性,建立了带PSM的LCC-SPRC的三个简化状态轨迹数学模型。提出了一种求解各模态持续时间的近似数值解的方法,从而得到精确的模态切换点。通过1.5kW样机的仿真和实验,验证了建模方法和近似数值解方法的准确性。
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引用次数: 1
Factors Influencing the Accuracy of Switching Characterization for SiC MOSFET 影响SiC MOSFET开关特性准确性的因素
Q4 AREA STUDIES Pub Date : 2022-10-28 DOI: 10.1109/ITECAsia-Pacific56316.2022.9942065
Zhikun Wang, Shuhao Yang, Saijun Mao, Xi Lu, Hongping Ma, Hongyao Liu
Silicon Carbide (SiC) power semiconductor device has been used in power electronics in recent years. However, it is a challenge to achieve accurate switching characterization of SiC MOSFET than Si IGBT due to its fast switching speed. Firstly, this paper analyzed the factors influencing the accuracy of switching characterization for SiC MOSFET. It is found that the signal zero bias of drain-source voltage (Vds) and current (Id), the time delay between Vds and Ids, sampling frequency and sampling bandwidth of measured equipments all lead to the inaccuracy. Moreover, a method based on SiC MOSFET switching behavior is proposed. The analysis and the model are validated from the experimental results based on a 1200V/600ASiC MOSFET power module and a 45m$Omega$ SiC MOSFET discrete.
碳化硅功率半导体器件近年来在电力电子领域得到了广泛的应用。然而,由于SiC MOSFET的开关速度快,因此与Si IGBT相比,实现精确的开关特性是一个挑战。本文首先分析了影响SiC MOSFET开关特性精度的因素。漏源电压(Vds)和电流(Id)的信号零偏、Vds和Id之间的时间延迟、被测设备的采样频率和采样带宽都是导致测量精度不准确的原因。此外,还提出了一种基于SiC MOSFET开关特性的方法。基于1200V/600ASiC MOSFET功率模块和45m$ ω $ SiC MOSFET分立器件的实验结果验证了分析和模型的正确性。
{"title":"Factors Influencing the Accuracy of Switching Characterization for SiC MOSFET","authors":"Zhikun Wang, Shuhao Yang, Saijun Mao, Xi Lu, Hongping Ma, Hongyao Liu","doi":"10.1109/ITECAsia-Pacific56316.2022.9942065","DOIUrl":"https://doi.org/10.1109/ITECAsia-Pacific56316.2022.9942065","url":null,"abstract":"Silicon Carbide (SiC) power semiconductor device has been used in power electronics in recent years. However, it is a challenge to achieve accurate switching characterization of SiC MOSFET than Si IGBT due to its fast switching speed. Firstly, this paper analyzed the factors influencing the accuracy of switching characterization for SiC MOSFET. It is found that the signal zero bias of drain-source voltage (Vds) and current (Id), the time delay between Vds and Ids, sampling frequency and sampling bandwidth of measured equipments all lead to the inaccuracy. Moreover, a method based on SiC MOSFET switching behavior is proposed. The analysis and the model are validated from the experimental results based on a 1200V/600ASiC MOSFET power module and a 45m$Omega$ SiC MOSFET discrete.","PeriodicalId":45126,"journal":{"name":"Asia-Pacific Journal-Japan Focus","volume":"27 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87133405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Asia-Pacific Journal-Japan Focus
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