Pub Date : 2024-04-26DOI: 10.1109/TSM.2024.3394008
Ching-Ming Ku;Wen Yea Jang;Stone Cheng
In wafer etching, regular cleaning and maintenance of process chambers are necessary to reduce particle contamination of etched wafers during the wafer transfer process. Investigating alternative cleaning and maintenance is imperative. This study analyzed the number of particles falling onto a silicon wafer when the pressure difference within the process chamber was manipulated. We observed that rapid opening of the pressure control valve, which regulates the chamber’s pressure, caused contamination during wafer transport. This was particularly true when the change in the pressure ratio was considerable. The by-products near the side of the chamber’s pressure control valve were activated and transported. We verified this finding by adjusting the opening ratio of the pressure control valve (i.e., its degree of opening). We proposed that during the transition step of the etching process, this opening ratio can be controlled by regulating the process pressure through gas flow settings. This method could suppress the deposition of reflected particles originating from the turbomolecular pump’s pumping line on wafers, thereby minimizing the contamination of wafers.
{"title":"Minimization of Particle Deposition on Wafers Caused by the Pressure Change in the Vacuum Chamber Through a Pressure Control Regulation Process","authors":"Ching-Ming Ku;Wen Yea Jang;Stone Cheng","doi":"10.1109/TSM.2024.3394008","DOIUrl":"10.1109/TSM.2024.3394008","url":null,"abstract":"In wafer etching, regular cleaning and maintenance of process chambers are necessary to reduce particle contamination of etched wafers during the wafer transfer process. Investigating alternative cleaning and maintenance is imperative. This study analyzed the number of particles falling onto a silicon wafer when the pressure difference within the process chamber was manipulated. We observed that rapid opening of the pressure control valve, which regulates the chamber’s pressure, caused contamination during wafer transport. This was particularly true when the change in the pressure ratio was considerable. The by-products near the side of the chamber’s pressure control valve were activated and transported. We verified this finding by adjusting the opening ratio of the pressure control valve (i.e., its degree of opening). We proposed that during the transition step of the etching process, this opening ratio can be controlled by regulating the process pressure through gas flow settings. This method could suppress the deposition of reflected particles originating from the turbomolecular pump’s pumping line on wafers, thereby minimizing the contamination of wafers.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140798028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-24DOI: 10.1109/TSM.2024.3392898
Tianhong Pan;Lu Liu;Menghu Li
Virtual metrology (VM) is crucial for improving process capability and production yield during semiconductor manufacturing processes. However, the performance of VM deteriorates owing to the variable operating regime and the nonlinear characteristics of the process. Herein, Variational inference Gaussian mixture model (VIGMM) and extreme learning machine (ELM) are combined to solve these issues. First, variational inference is conducted on a Gaussian mixture model to determine the number of Gaussian components automatically and the corresponding operating regimes are identified. Subsequently, an extreme learning machine is developed for each operating regime to investigate the nonlinear relationship between process inputs and outputs. Finally, VM is implemented using the corresponding local ELM, which is determined based on the responsibility of the Gaussian components. The feasibility and effectiveness of the proposed methods are validated based on a numerical case and the plasma sputtering process for fabricating thin-film transistor liquid-crystal displays. The proposed VIGMM-ELM can serve as a VM algorithm for manufacturing processes with multiple stages.
在半导体制造过程中,虚拟计量(VM)对于提高工艺能力和产量至关重要。然而,由于操作制度多变和工艺的非线性特征,虚拟计量的性能会下降。在此,变异推理高斯混合模型(VIGMM)和极端学习机(ELM)相结合来解决这些问题。首先,对高斯混合物模型进行变分推理,自动确定高斯成分的数量,并确定相应的运行状态。随后,针对每种运行机制开发极端学习机,以研究流程输入和输出之间的非线性关系。最后,使用相应的局部 ELM 实现虚拟机管理,该局部 ELM 是根据高斯成分的责任确定的。基于一个数值案例和用于制造薄膜晶体管液晶显示器的等离子溅射工艺,验证了所提方法的可行性和有效性。提出的 VIGMM-ELM 可以作为多阶段制造过程的 VM 算法。
{"title":"Virtual Metrology for Multistage Processes Using Variational Inference Gaussian Mixture Model and Extreme Learning Machine","authors":"Tianhong Pan;Lu Liu;Menghu Li","doi":"10.1109/TSM.2024.3392898","DOIUrl":"10.1109/TSM.2024.3392898","url":null,"abstract":"Virtual metrology (VM) is crucial for improving process capability and production yield during semiconductor manufacturing processes. However, the performance of VM deteriorates owing to the variable operating regime and the nonlinear characteristics of the process. Herein, Variational inference Gaussian mixture model (VIGMM) and extreme learning machine (ELM) are combined to solve these issues. First, variational inference is conducted on a Gaussian mixture model to determine the number of Gaussian components automatically and the corresponding operating regimes are identified. Subsequently, an extreme learning machine is developed for each operating regime to investigate the nonlinear relationship between process inputs and outputs. Finally, VM is implemented using the corresponding local ELM, which is determined based on the responsibility of the Gaussian components. The feasibility and effectiveness of the proposed methods are validated based on a numerical case and the plasma sputtering process for fabricating thin-film transistor liquid-crystal displays. The proposed VIGMM-ELM can serve as a VM algorithm for manufacturing processes with multiple stages.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140798026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-23DOI: 10.1109/TSM.2024.3392712
Christoph Wehmann;Ambarish Kulkarni;Feyzan Durn;Murat Gulcur;Alan Astbury
Maintaining vacuum integrity for the semiconductor manufacturing processes is extremely important to improve semiconductor fab productivity. The expensive machinery and the enormous costs of production downtime require reliable sealing systems which are designed to operate the longest possible preventative maintenance (PM) cycles. Being able to predict the lifetime of the sealing systems can help determine the optimum maintenance periods and hence increase profitability in costly wafer processing. The present contribution describes a finite element method to predict the lifetime of vacuum sealing systems limited by aging effects of the elastomer. Several different applications are considered including isothermal and non-isothermal conditions. Furthermore, homogeneous and inhomogeneous temperature fields are analyzed. Finally, the model predictions are compared to experimental data.
{"title":"Predicting Temperature-Dependent Aging Effects and Permanent Set of Vacuum Sealing Systems in Semiconductor Manufacturing Processes","authors":"Christoph Wehmann;Ambarish Kulkarni;Feyzan Durn;Murat Gulcur;Alan Astbury","doi":"10.1109/TSM.2024.3392712","DOIUrl":"10.1109/TSM.2024.3392712","url":null,"abstract":"Maintaining vacuum integrity for the semiconductor manufacturing processes is extremely important to improve semiconductor fab productivity. The expensive machinery and the enormous costs of production downtime require reliable sealing systems which are designed to operate the longest possible preventative maintenance (PM) cycles. Being able to predict the lifetime of the sealing systems can help determine the optimum maintenance periods and hence increase profitability in costly wafer processing. The present contribution describes a finite element method to predict the lifetime of vacuum sealing systems limited by aging effects of the elastomer. Several different applications are considered including isothermal and non-isothermal conditions. Furthermore, homogeneous and inhomogeneous temperature fields are analyzed. Finally, the model predictions are compared to experimental data.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140797920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Transistor random threshold voltage variations due to process fluctuations seriously affects the stability of Static Random Access Memory (SRAM). In this paper, a SRAM bit transistors threshold voltage $({Vth})$