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Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C₄F₈/Ar/O₂ Plasma 在 C4F8/Ar/O2 等离子体蚀刻中应用基于等离子体信息的虚拟计量学 (PI-VM)
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-21 DOI: 10.1109/TSM.2024.3447074
Gwanjoong Kim;Ji-Won Kwon;Ingyu Lee;Hwiwon Seo;Jong-Bae Park;Jong-Hyeon Shin;Gon-Ho Kim
This study developed Plasma Information-based Virtual Metrology (PI-VM) to predict etching process results and analyze process phenomena. Using a dual-frequency capacitively coupled plasma (CCP) etcher with C4F8/Ar/O2 plasma, we etched low aspect ratio (AR) trench patterns in amorphous carbon layer (ACL) hard masks and $rm SiO_{2}$ molds, and developed the PI-VM statistically by integrating plasma information (PI) variables that reflect domain knowledge. The passivation effect of fluorocarbon plasma was analyzed by varying the gas ratios and the effect of ion energy was analyzed by changing the low frequency (LF) power. In the PI-VM results, the density ratios of the passivation precursor $rm CF_{2}$ to the etchant F and O were selected as key factors for predicting the process. The selection of radical density ratios as features confirmed the dominance of plasma chemistry in low AR etching. Demonstrating high predictive accuracy with minimal data, PI-VM offers significant potential to enhance the development of semiconductor process recipes.
本研究开发了基于等离子体信息的虚拟计量学(PI-VM),用于预测蚀刻工艺结果和分析工艺现象。我们使用带有 C4F8/Ar/O2 等离子体的双频电容耦合等离子体(CCP)刻蚀机,在非晶碳层(ACL)硬掩模和 $rm SiO_{2}$ 模具中刻蚀了低纵横比(AR)沟槽图案,并通过整合反映领域知识的等离子体信息(PI)变量,统计地开发了 PI-VM。通过改变气体比例分析了碳氟化合物等离子体的钝化效果,通过改变低频(LF)功率分析了离子能量的影响。在 PI-VM 结果中,钝化前驱体 $rm CF_{2}$ 与蚀刻剂 F 和 O 的密度比被选为预测过程的关键因素。选择自由基密度比作为特征证实了等离子化学在低 AR 蚀刻中的主导地位。PI-VM 只需极少的数据就能显示出很高的预测准确性,为加强半导体工艺配方的开发提供了巨大的潜力。
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引用次数: 0
Group-Exclusive Feature Group Lasso and Applications to Automatic Sensor Selection for Virtual Metrology in Semiconductor Manufacturing 组专属特征组套索及其在半导体制造虚拟计量自动传感器选择中的应用
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-21 DOI: 10.1109/TSM.2024.3444720
Jeongsub Choi;Youngdoo Son;Jihoon Kang
Group lasso is a regularization widely used for feature group selection with sparsity at a group level in machine learning. Training a model with the group lasso regularization, however, leads to the selection of all the groups together that are closely related to each other although their features are useful to predict a target. In this study, we propose a new regularization, group-exclusive group lasso, for automatic exclusive feature group selection. The proposed regularization aims to enforce exclusive sparsity at an inter-group level, discouraging the coincident selection of the feature groups that are group-level correlated and share predictive powers toward the targets. The proposed method aims at higher group sparsity for selecting salient feature groups only, and is applied to neural networks. We evaluate the proposed regularization in neural networks on synthetic datasets and a real-life case for virtual metrology with automatic sensor selection in semiconductor manufacturing.
组 lasso 是一种正则化方法,广泛应用于机器学习中的组级稀疏性特征组选择。然而,使用组 lasso 正则化训练模型会导致选择所有彼此密切相关的组,尽管这些组的特征对预测目标非常有用。在本研究中,我们提出了一种新的正则化方法--组排他性组 lasso,用于自动选择排他性特征组。所提出的正则化旨在加强组间水平的排他性稀疏性,阻止重合选择具有组级相关性且对目标具有共同预测能力的特征组。所提出的方法旨在实现更高的组稀疏性,只选择突出的特征组,并将其应用于神经网络。我们在合成数据集和半导体制造中自动选择传感器的虚拟计量实际案例中评估了神经网络中的正则化建议。
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引用次数: 0
Special Section Call for Papers: Bridging the Data Gap in Photovoltaics with Synthetic Data Generation 特别版块征稿:通过合成数据生成弥补光伏领域的数据差距
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3442019
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引用次数: 0
Direct Emissions Reduction in Plasma Dry Etching Using Alternate Chemistries: Opportunities, Challenges, and Need for Collaboration 使用替代化学剂直接减少等离子干蚀刻中的排放:机遇、挑战与合作需求
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3444465
Gurpreet S. Lugani;Robert Skaggs;Bryan Morris;Tyler Tolman;Douglas Tervo;Stefan Uhlenbrock;Jon Hacker;Chye Seng Tan;James P. Nehlsen;Robert G. Ridgeway;Lois Wong Broadway;Francis P. Rudy
Plasma Dry-Etch (DE) is one of the key unit-operations in semiconductor manufacturing that use greenhouse gases (GHG) as feed gas (Donnelly and Kornblit, 2013). The exhaust GHG emission reduction or mitigation is one of the main focuses of scope 1 emission reduction at Micron Technology Inc. The reduction and mitigation approaches have been strategized in focus-tiers in order of proximity to the source of emissions. The focus-tiers upstream of exhaust are avoidance, replacement, reduction and downstream of exhaust are recovery/capture/recycle, abatement. This paper focuses on the replacement focus-tier that pertains to replacing high-emission feed gases (HE gas, feedgas that will produce relatively high kgCO2e through exhaust) with relatively low-emission feed gases (LE gas, feedgas that will produce relatively low kgCO2e through exhaust). The paper presents replacement opportunities and challenges through an evaluation study of Carbonyl Floride (COF2) as a replacement gas for NF3 or CF4 as a DE in-situ plasma chamber cleans gas. In conclusion, direct emissions from DE chamber cleans can be lowered by replacing NF3 and CF4 GHGs with COF2 by 90% or more. However, this replacement would require additional safety measures and abatement in operations due to increased toxicity and reactivity of COF2, along with cost roadmap to make its adoption economically feasible. Similar and possibly additional challenges would arise with other replacement options. To overcome challenges in replacement strategy focus-tier, it will require strong industry level collaboration between chemical suppliers, original equipment manufacturers (OEMs), device manufacturers, semiconductor research and collaboration centers and university research groups.
等离子干蚀(DE)是半导体制造中使用温室气体(GHG)作为原料气体的关键单元操作之一(Donnelly 和 Kornblit,2013 年)。废气温室气体减排或缓解是美光科技公司范围 1 减排的重点之一。减少和缓解方法已按照接近排放源的顺序,在重点层中进行了战略规划。排气上游的重点层为避免、替代、减少,排气下游的重点层为回收/捕获/再循环、减排。本文的重点是替换重点层,即用相对低排放的原料气体(LE 气体,通过排气产生相对较低 kgCO2e 的原料气体)替换高排放的原料气体(HE 气体,通过排气产生相对较高 kgCO2e 的原料气体)。本文通过对羰基氟化物(COF2)作为 NF3 或 CF4 的替代气体作为 DE 原位等离子体室清洁气体的评估研究,介绍了替代机会和挑战。总之,用 COF2 替代 NF3 和 CF4 温室气体,可将 DE 室清洗产生的直接排放降低 90% 或更多。然而,由于 COF2 的毒性和反应性增加,这种替代品需要在操作中采取额外的安全措施和减排措施,同时还需要制定成本路线图,使其在经济上可行。其他替代方案也会面临类似的挑战,甚至更多挑战。要克服替代战略重点层中的挑战,需要化学品供应商、原始设备制造商 (OEM)、设备制造商、半导体研究与合作中心以及大学研究小组之间在行业层面上开展强有力的合作。
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引用次数: 0
IEEE Transactions on Semiconductor Manufacturing Information for Authors IEEE Transactions on Semiconductor Manufacturing 为作者提供的信息
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3434277
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引用次数: 0
IEEE Transactions on Semiconductor Manufacturing Publication Information 电气和电子工程师学会半导体制造期刊》出版信息
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3434275
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引用次数: 0
Guest Editorial Special section on the 2023 SEMI Advanced Semiconductor Manufacturing Conference 特约编辑 2023 年 SEMI 高级半导体制造大会特别专栏
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3429588
Jeanne Paulette Bickford;Delphine Le Cunff;Ralf Buengener;Stefan Radloff;Paul Werbaneth
As this Special Section goes to publication, semiconductor manufacturing in the United Status, and globally, continues to expand at a seemingly torrid pace. Assisted by government funding and driven in part by artificial intelligence workloads that gobble up increasing amounts of data center computing capacity, Intel and TSMC fabs are going up in Arizona, TI and Samsung fabs are coming to Texas, and Micron has big plans in New York. Unfortunately, just like those flying cars we were once promised, AI has not yet eliminated the need for the skilled trades and engineers required to build and successfully operate a fab. As a result, workforce development has become an important part of the increasingly complex semiconductor manufacturing process: Where are the thousands of engineers the semiconductor industry needs to staff these new fabs going to come from? How can we make more students excited about science and engineering? While the Guest Editors don’t have all the answers, we are happy that ASMC contributes to the solution by actively supporting student presentations and posters and annually recognizing the best student paper of the conference. And, maybe some day, the artificial intelligence systems that semiconductor manufacturing has enabled will give us those Star Wars or Star Trek robots that can build fabs and make chips too.
就在本特刊出版之际,美国乃至全球的半导体制造业仍在以迅猛的速度发展。英特尔和台积电的晶圆厂正在亚利桑那州拔地而起,德州仪器和三星的晶圆厂即将落户德克萨斯州,美光在纽约也有大计划。不幸的是,就像我们曾经承诺过的飞行汽车一样,人工智能尚未消除对建造和成功运营晶圆厂所需的熟练工种和工程师的需求。因此,劳动力发展已成为日益复杂的半导体制造流程的重要组成部分:半导体行业需要成千上万的工程师来为这些新工厂配备员工,这些工程师从哪里来?如何让更多的学生对科学和工程学产生兴趣?虽然特约编辑没有所有的答案,但我们很高兴 ASMC 通过积极支持学生演讲和海报,以及每年表彰大会最佳学生论文,为解决方案做出了贡献。也许有一天,半导体制造所带来的人工智能系统会给我们带来《星球大战》或《星际迷航》中的机器人,它们也能建造晶圆厂和制造芯片。
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引用次数: 0
Blank Page 空白页
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3434271
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引用次数: 0
Call for Papers: Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices 征稿:电气和电子工程师学会电子器件学报》智能传感器系统特刊
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3411140
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引用次数: 0
IEEE EDS Robert Bosch Micro and Nano Electro Mechanical Systems Award: Call for Nominations IEEE EDS 罗伯特-博世微米和纳米机械系统奖:征集提名
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-14 DOI: 10.1109/TSM.2024.3442028
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IEEE Transactions on Semiconductor Manufacturing
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