Pub Date : 2024-08-21DOI: 10.1109/TSM.2024.3447074
Gwanjoong Kim;Ji-Won Kwon;Ingyu Lee;Hwiwon Seo;Jong-Bae Park;Jong-Hyeon Shin;Gon-Ho Kim
This study developed Plasma Information-based Virtual Metrology (PI-VM) to predict etching process results and analyze process phenomena. Using a dual-frequency capacitively coupled plasma (CCP) etcher with C4F8/Ar/O2 plasma, we etched low aspect ratio (AR) trench patterns in amorphous carbon layer (ACL) hard masks and $rm SiO_{2}$