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A Computational Method for Screening Low-GWP Fluorinated Gases in Semiconductor Manufacturing 半导体制造中筛选低gwp氟化气体的计算方法
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-14 DOI: 10.1109/TSM.2025.3633070
Dongkyum Kim;Jiwon Seo;Jun-Ho Choi;Munam Kim;Bumsuk Jung;Sang Jeen Hong;Jeongsoon Lee
The widespread use of fluorinated gases in semiconductor manufacturing has raised significant environmental concerns due to their high global warming potential (GWP). To address this issue, we developed a systematic methodology for screening and evaluating low-GWP F-gases based on density functional theory (DFT) calculations. The infrared absorption cross-section (ACS) spectra and radiative efficiencies (RE) of candidate gases were predicted and systematically corrected using an empirical scaling factor derived from the correlation between calculated and experimentally measured RE values. This correction significantly improved the accuracy of GWP predictions. The methodology was successfully validated against representative F-gases, yielding GWP1oo estimates that closely align with reported values for high-GWP gases (GWP1oo=2,240), mid-GWP gases (GWP1oo=87), and low-GWP gases (below GWP1oo=10). Notably, several candidate gases, such as COF2, CF3OCFCF2, CF3C(O)CF(CF3)2, and C6F6, exhibited estimated GWP1oo values of 1.79, 2.69, 3.03, and 7.56, respectively, which are consistent with reported values. They were re-confirmed by the proposed method as promising low-GWP alternatives to conventional high-GWP etching and cleaning gases. By adopting a practical, accessible DFT methodology, this approach delivers reliable comparisons of GWP values among candidate gases and supports rapid, on-site GWP assessments without requiring specialized expertise.
由于氟化气体的高全球变暖潜势(GWP),氟化气体在半导体制造中的广泛使用引起了严重的环境问题。为了解决这个问题,我们开发了一种基于密度泛函理论(DFT)计算的筛选和评估低gwp f气体的系统方法。利用计算值和实验测量值之间的相关性推导出的经验标度因子,对候选气体的红外吸收截面(ACS)光谱和辐射效率(RE)进行了预测和系统校正。这一修正显著提高了全球变暖潜值预测的准确性。该方法成功地针对代表性的f -气体进行了验证,得到的gwp100估估值与高gwp气体(gwp100 = 2240)、中gwp气体(gwp100 =87)和低gwp气体(低于gwp100 =10)的报告值密切一致。值得注意的是,几种候选气体,如COF2、CF3OCFCF2、CF3C(O)CF(CF3)2和C6F6,其gwp100的估计值分别为1.79、2.69、3.03和7.56,与报道值一致。通过提出的方法,它们被再次确认为有希望的低gwp替代传统的高gwp蚀刻和清洁气体。通过采用实用的、易于使用的DFT方法,该方法可以可靠地比较候选气体之间的GWP值,并支持快速的现场GWP评估,而无需专业知识。
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引用次数: 0
Artificial Intelligence–Based Evaluation System With Domain Adaptation for Ultrathin Wafer Detaping 基于领域自适应的超薄晶圆剥离人工智能评价系统
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-07 DOI: 10.1109/TSM.2025.3630127
Gene Eu Jan;Hsin-Lung Wu;Jia-Xi Zhao;Bor-Shing Lin
As high-density packaging and low power consumption are prioritized in semiconductor production, ultrathin wafer processing has become vital. However, the fragile nature of these wafers often leads to damage during manual detaping, a process that is time-consuming, labor-intensive, and subjective. To address this, we developed an automated evaluation system integrating You Only Look Once version 8 (YOLOv8) with domain adaptation for robust performance under environmental variations. Through real-time image analysis, the system tracks detaping motion and quantifies operational stability using a finite state machine to calculate operation time. Experimental results under supervised learning showed average motion detection recall and precision of 99.06% and 98.33%, with a mean absolute error (MAE) of 0.17 s. Crucially, the proposed semi-supervised domain adaptive framework mitigated data distribution differences; in one experiment, mAP50 improved by 72.62% from baseline. For motion detection across two domain adaptation experiments, the system maintained high performance, with average precision and recall of 95.4% and 93.5% and an MAE of 0.275 s. This system provides an effective, automated evaluation of manual detaping, demonstrating the value of domain adaptation-based object detection in industrial applications.
随着高密度封装和低功耗在半导体生产中的优先考虑,超薄晶圆加工变得至关重要。然而,这些晶圆的易碎性往往导致在人工剥离过程中损坏,这是一个耗时,劳动密集型和主观的过程。为了解决这个问题,我们开发了一个自动评估系统,该系统集成了You Only Look Once version 8 (YOLOv8)和域适应,以实现环境变化下的稳健性能。系统通过实时图像分析,跟踪脱模运动,利用有限状态机量化运行稳定性,计算运行时间。实验结果表明,在监督学习下,运动检测的平均查全率和查准率分别为99.06%和98.33%,平均绝对误差为0.17 s。关键是,提出的半监督域自适应框架缓解了数据分布差异;在一次实验中,mAP50较基线提高了72.62%。在跨两个域自适应实验中,系统保持了较高的运动检测性能,平均准确率和召回率分别为95.4%和93.5%,MAE为0.275 s。该系统提供了一种有效的、自动化的人工分离评估,展示了基于领域自适应的目标检测在工业应用中的价值。
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引用次数: 0
2025 Index IEEE Transactions on Semiconductor Manufacturing 半导体制造学报
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-04 DOI: 10.1109/TSM.2025.3628524
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 《IEEE电子器件学报:用于射频、功率和光电子应用的超宽带隙半导体器件》特刊征文
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-31 DOI: 10.1109/TSM.2025.3622883
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes 《IEEE电子设备学报:高级节点的可靠性》特刊征文
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-31 DOI: 10.1109/TSM.2025.3622881
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引用次数: 0
IEEE Transactions on Semiconductor Manufacturing Information for Authors IEEE半导体制造信息汇刊
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-31 DOI: 10.1109/TSM.2025.3622905
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引用次数: 0
Improving RF Magnetron Sputter Parameters for a Piezoelectric AlN Thin Film Deposition 改进压电AlN薄膜沉积的射频磁控溅射参数
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-20 DOI: 10.1109/TSM.2025.3623907
S. Atheeth;H. B. Chandan;N. Trishul;Manish Arora
This paper reports on the parameters that affect the crystalline quality of Aluminium Nitride (AlN) thin film grown using the RF magnetron sputtering process. AlN film of 1-micron thickness is the piezoelectric material of choice in the fabrication of a high-frequency resonating structure. Substrate temperature, RF power, gas-ratios were fine tuned in various experimental trials to obtain a <002> c-axis oriented AlN thin film. Least obtained FWHM from the XRD plots were 0.44°. In Atomic Force Microscopy (AFM) surface roughness of the best quality AlN thin film was 11.1nm. Using Piezo response Force Microscopy (PFM) butterfly loops were constructed and effective piezoelectric co-efficient of 7.28 pm/V was obtained. This co-efficient value is accounting for both the ${mathrm { d}}_{33}$ of the piezoelectric material and the substrate bending for the released membrane structure.
本文报道了影响射频磁控溅射生长氮化铝薄膜结晶质量的参数。厚度为1微米的氮化铝薄膜是制造高频谐振结构的首选压电材料。在各种实验中,对衬底温度、射频功率、气体比进行了微调,得到了c轴取向的氮化铝薄膜。从XRD图中得到的FWHM最小为0.44°。在原子力显微镜(AFM)下,最佳质量的AlN薄膜表面粗糙度为11.1nm。利用压电响应力显微镜(PFM)构建了蝶形环,获得了7.28 pm/V的有效压电系数。该系数值既考虑了压电材料的${ mathm {d}}_{33}$,也考虑了释放膜结构的基底弯曲。
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引用次数: 0
Three-Dimensional Flow Analysis and Humidity Level Evaluation for a FOUP During Open Door Operation Conditions 开门工况下FOUP的三维流动分析与湿度水平评估
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-16 DOI: 10.1109/TSM.2025.3622489
Anthony Xavier Andrade;Omid Ali Zargar;Yang-Cheng Shih;Graham Leggett;Shih-Cheng Hu
Controlling moisture content during silicon wafer fabrication is essential to maintain good product quality, minimize undesired defects, and improve the performance of the manufacturing process. This study investigated the 3D air flow patterns and relative humidity (RH) distribution within a Front Opening Unified Pod (FOUP) used in semiconductor manufacturing. Two purging techniques were evaluated: the diffuser purge method and the diffuser & laminar air curtain (LAC) purge method, to determine their effectiveness in moisture removal when the FOUP door is open under varying flow rates. Computational Fluid Dynamics (CFD) simulations using the Large Eddy Simulation (LES) model were conducted to analyze air flow behavior and RH levels, and the numerical results were validated through experimental measurements using humidity sensors embedded in dummy wafers. The findings demonstrate that the integrated diffuser and LAC purging strategy is a highly effective solution for maintaining low humidity levels in FOUPs, thereby enhancing cleanliness standards critical to semiconductor fabrication.
在硅晶圆制造过程中控制水分含量对于保持良好的产品质量、减少不良缺陷和提高制造过程的性能至关重要。本研究调查了半导体制造中使用的前开口统一吊舱(FOUP)内的三维气流模式和相对湿度(RH)分布。评估了两种吹扫技术:扩散器吹扫法和扩散器&层流气幕(LAC)吹扫法,以确定在不同流量下打开FOUP门时它们的除湿效果。利用大涡模拟(LES)模型进行了计算流体动力学(CFD)模拟,分析了空气流动行为和相对湿度水平,并通过嵌入假晶圆的湿度传感器进行了实验测量,验证了数值结果。研究结果表明,集成扩散器和LAC净化策略是一种非常有效的解决方案,可以保持foup中的低湿度水平,从而提高对半导体制造至关重要的清洁度标准。
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引用次数: 0
Addressing Energy and PFAS Chemical Consumption in Semiconductor Manufacturing: Case Study in a University Fab 解决半导体制造中的能源和PFAS化学消耗:以某大学晶圆厂为例
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-14 DOI: 10.1109/TSM.2025.3621131
William P. Shuley;Santosh K. Kurinec
This study involves the tabulation of energy usage for a standard metal-oxide semiconductor field-effect transistor (MOSFET) manufacturing process in a university semiconductor fabrication teaching laboratory. The purpose of the energy audit is to pave the way for further reductions in energy usage and more efficient fabrication processes, to lessen the semiconductor industry’s burden on the global energy supply chain. A prototype photovoltaic system is designed to offset the energy usage of this process providing a vision towards the use of renewables. For the chemical case study, a comparison of reactive ion etching to ion beam etching is done to observe differences in the efficiency and results of the processes and to compare their prospects for widespread use within industry. Reactive ion etching involves the use of harmful per- and polyfluoroalkyl (PFAS) substances. Ion beam etching is another etching technology that is less widespread in large-scale manufacturing but consumes inert gases and does not produce environmental toxins as a byproduct. The study of these two important areas, at an educational level, will be a way for the future of the industry to improve the impact they have on society by re-engineering energy usage and re-thinking chemical usage.
本研究涉及一所大学半导体制造教学实验室中标准金属氧化物半导体场效应晶体管(MOSFET)制造过程的能源使用表。能源审计的目的是为进一步减少能源使用和提高制造工艺效率铺平道路,减轻半导体行业对全球能源供应链的负担。设计了一个原型光伏系统来抵消这个过程的能源消耗,为使用可再生能源提供了一个愿景。在化学案例研究中,对反应离子蚀刻和离子束蚀刻进行了比较,以观察两种工艺的效率和结果的差异,并比较它们在工业中广泛应用的前景。反应性离子蚀刻涉及使用有害的全氟烷基和多氟烷基(PFAS)物质。离子束蚀刻是另一种蚀刻技术,在大规模制造中应用较少,但它消耗惰性气体,不会产生环境毒素作为副产品。在教育层面对这两个重要领域进行研究,将是该行业未来通过重新设计能源使用和重新思考化学品使用来改善其对社会影响的一种方式。
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引用次数: 0
Modeling and Scheduling of Dual-Arm Cluster Tools With Multifunctional Process Modules 具有多功能进程模块的双臂集群工具建模与调度
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-14 DOI: 10.1109/TSM.2025.3621092
Guanzhong Wu;Wenqing Xiong;Chunrong Pan
In semiconductor manufacturing, a multifunctional process module (MPM) can perform multiple processing steps by adjusting its functional settings. This enhances the reconfigurability of cluster tools and allows them to flexibly adapt to diverse production requirements. However, the different function settings of the MPM change the number of processing modules and generate multiple alternative processing routes. Deadlocks occur more frequently in wafer manufacturing processes with flexible routes. The flexible configuration of MPM function leads to a highly complex and large-scale model. Proper configuration of MPM can optimize lot scheduling and improve processing efficiency. Thus, based on the functional setting of MPM, process-oriented Petri nets (POPNs) are established to describe the transient and steady state processing of the system, and control explanations are developed to avoid the system deadlock. Then, based on the evolving mechanism of the Petri nets, the temporal properties of the system under the earliest starting strategy (ESS) are analyzed. An algorithm based on ESS is developed to compute the makespan of wafers in a lot and optimize the settings of the MPM function. Experimental results demonstrate that for scheduling problems unsolvable by the mixed-integer programming (MIP) model, the algorithm can adaptively minimize system lot completion time by reasonably setting the function of MPM.
在半导体制造中,多功能工艺模块(MPM)可以通过调整其功能设置来执行多个处理步骤。这增强了集群工具的可重构性,使它们能够灵活地适应不同的生产需求。但是,MPM的不同功能设置会改变处理模块的数量,并产生多条可选的处理路由。在路线灵活的晶圆制造过程中,死锁发生的频率更高。MPM函数的灵活配置导致模型的高度复杂和大规模。合理配置MPM可以优化批次调度,提高加工效率。因此,基于MPM的功能设置,建立了面向过程的Petri网(popn)来描述系统的瞬态和稳态过程,并提出了控制解释以避免系统死锁。然后,基于Petri网的演化机制,分析了系统在最早启动策略下的时间特性。在此基础上,提出了一种基于ESS的多晶圆最大寿命计算算法,并对MPM函数的设置进行了优化。实验结果表明,对于混合整数规划(MIP)模型无法解决的调度问题,该算法通过合理设置混合整数规划函数,可以自适应地最小化系统批次完成时间。
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引用次数: 0
期刊
IEEE Transactions on Semiconductor Manufacturing
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