R. Madatov, R. Mamishova, M. Mamedov, J. Ismayilov, Ulviya Faradjova
Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb1-xMnx Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb1-xMnx Se x = 0.01 epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.
{"title":"Electrophysical properties of Pb1−XMnXSe epitaxial films irradiated by γ-quanta","authors":"R. Madatov, R. Mamishova, M. Mamedov, J. Ismayilov, Ulviya Faradjova","doi":"10.3906/fiz-1906-14","DOIUrl":"https://doi.org/10.3906/fiz-1906-14","url":null,"abstract":"Herein, the effect of γ-quanta on electrophysical and photoelectric properties of p-type Pb1-xMnx Se epitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has been investigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175 eV are generated, when p-type Pb1-xMnx Se x = 0.01 epitaxial films are irradiated by γ-quanta at D >10 kGy doses. The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, but the decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with 0.175 eV energy as a recombination center.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45538426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
KNO scaling was put forward by Koba-Nielsen-Olesen in 1972 and then tested by various experiments up to now. In this paper, the data on charged hadron multiplicity moments with KNO scaling of CHORUS and OPERA, both of them emulsion-based neutrino experiments, are compared. The results are given in detail which is very useful for tuning in MC event generators.
{"title":"Study of KNO scaling in the emulsion based neutrino experiments","authors":"Ç. Kamışcıoğlu","doi":"10.3906/fiz-1912-12","DOIUrl":"https://doi.org/10.3906/fiz-1912-12","url":null,"abstract":"KNO scaling was put forward by Koba-Nielsen-Olesen in 1972 and then tested by various experiments up to now. In this paper, the data on charged hadron multiplicity moments with KNO scaling of CHORUS and OPERA, both of them emulsion-based neutrino experiments, are compared. The results are given in detail which is very useful for tuning in MC event generators.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41409073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Velocity/energy-dependent potential to a parent nonlocal interaction is constructed for all partial waves by Taylor series expansion method and the related s and p-wave phase shifts for N-N and α-N systems are computed by application of modified phase equation. Our phase shifts are in good agreement with standard data.
{"title":"Generating velocity-dependent potential in all partial waves","authors":"A. K. Behera, U. Laha, J. Bhoi","doi":"10.3906/fiz-1909-16","DOIUrl":"https://doi.org/10.3906/fiz-1909-16","url":null,"abstract":"Velocity/energy-dependent potential to a parent nonlocal interaction is constructed for all partial waves by Taylor series expansion method and the related s and p-wave phase shifts for N-N and α-N systems are computed by application of modified phase equation. Our phase shifts are in good agreement with standard data.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-1909-16","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47984146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Margaretta, N. Amalia, F. Utami, R. Murniati, S. Viridi, M. Abdullah
We rederived the fermion distribution function by considering the effect of assembly size. We did not use Stirling approximation to avoid the deviation generated by this approximation for a small number of constituents and small assembly size. Furthermore, we identified that in small systems, the chemical potential should also depend on the assembly size. We also rederived a general expression for the size-dependent chemical potential from a statistical configuration and showed that it is consistent with the results from previously reported theoretical or simulation methods. Finally, we applied the model to derive a size-dependent thermoelectric power factor of nanostructured materials. One important finding is that the power factor initially increases when reducing the particle size; however, it then reduces to approach zero when further reducing the material size, due to a dramatic change in the material behaviors.
{"title":"Size-dependent electron chemical potential in nanostructures derived from statistical configuration","authors":"D. Margaretta, N. Amalia, F. Utami, R. Murniati, S. Viridi, M. Abdullah","doi":"10.3906/fiz-1907-27","DOIUrl":"https://doi.org/10.3906/fiz-1907-27","url":null,"abstract":"We rederived the fermion distribution function by considering the effect of assembly size. We did not use Stirling approximation to avoid the deviation generated by this approximation for a small number of constituents and small assembly size. Furthermore, we identified that in small systems, the chemical potential should also depend on the assembly size. We also rederived a general expression for the size-dependent chemical potential from a statistical configuration and showed that it is consistent with the results from previously reported theoretical or simulation methods. Finally, we applied the model to derive a size-dependent thermoelectric power factor of nanostructured materials. One important finding is that the power factor initially increases when reducing the particle size; however, it then reduces to approach zero when further reducing the material size, due to a dramatic change in the material behaviors.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-1907-27","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47764558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A non-minimal coupling of Weyl curvatures to electromagnetic fields is considered in Brans-Dicke-Maxwell theory. The gravitational field equations are formulated in a Riemannian spacetime where the spacetime torsion is constrained to zero by the method of Lagrange multipliers in the language of exterior differential forms. The significance and ramifications of non-minimal couplings to gravity are examined in a pp-wave spacetime.
{"title":"A nonminimally coupled, conformally extended Einstein-Maxwell theory of pp-waves","authors":"T. Dereli, Yorgo Şenikoğlu","doi":"10.3906/fiz-2002-18","DOIUrl":"https://doi.org/10.3906/fiz-2002-18","url":null,"abstract":"A non-minimal coupling of Weyl curvatures to electromagnetic fields is considered in Brans-Dicke-Maxwell theory. The gravitational field equations are formulated in a Riemannian spacetime where the spacetime torsion is constrained to zero by the method of Lagrange multipliers in the language of exterior differential forms. The significance and ramifications of non-minimal couplings to gravity are examined in a pp-wave spacetime.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46027446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Kidalov, A. Dyadenchuk, Y. Bacherikov, A. Zhuk, Tetyana Gorbaniuk, I. Rogozin, V. Kidalov
In the present work, ZnO films were obtained on mesoporous silicon substrates by the method of HF magnetron sputtering of a metallic zinc target in reaction oxygen and argon gas medium. The properties of the ZnO films obtained on mesoporous substrates were studied depending on the ratio of the partial pressures of the working gases (argon/oxygen). X-ray analysis showed that in the process of deposition, the ZnO films of a hexagonal structure were formed. The effect of the porous layer on the structural and luminescent properties of the thin ZnO films was studied. The results showed that the porous silicon substrate reduces residual stresses and can be used for obtaining high-quality ZnO films.
{"title":"Structural and optical properties of ZnO films obtained on mesoporous Si substrates by the method of HF magnetron sputtering","authors":"V. Kidalov, A. Dyadenchuk, Y. Bacherikov, A. Zhuk, Tetyana Gorbaniuk, I. Rogozin, V. Kidalov","doi":"10.3906/fiz-1909-10","DOIUrl":"https://doi.org/10.3906/fiz-1909-10","url":null,"abstract":"In the present work, ZnO films were obtained on mesoporous silicon substrates by the method of HF magnetron sputtering of a metallic zinc target in reaction oxygen and argon gas medium. The properties of the ZnO films obtained on mesoporous substrates were studied depending on the ratio of the partial pressures of the working gases (argon/oxygen). X-ray analysis showed that in the process of deposition, the ZnO films of a hexagonal structure were formed. The effect of the porous layer on the structural and luminescent properties of the thin ZnO films was studied. The results showed that the porous silicon substrate reduces residual stresses and can be used for obtaining high-quality ZnO films.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-1909-10","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43663009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The reactive wetting process of a flat solid alumina (α -Al2 O3) ceramic surface by metallic aluminum (Al) nanodroplets with different shapes (spherical, cylindrical, and layer) is studied using parallel molecular dynamics (MD) simulations based on a variable charge MD method, with focuses on heat transfer, mass transfer, and the structure of the reactive region at the Al/α -Al2 O3 interface. We find that the diffusion of oxygen (O) atoms from the substrate into the droplet leads to the formation of a continuous layer of reaction product at the interface. The diffusion length of oxygen atoms into the spherical Al droplet is found to be ~7.3 Å, and the number density of O atoms at the ~5 top layers of the substrate decreases substantially. As a result, the structural correlations near the reactive region differ considerably from those in the solid substrate. Heat generated by the exothermic reactions in the reactive region is transferred to both the substrate and the droplet. The heat transfer is found to be sensitive to droplet shape.
{"title":"Reactive wetting of metallic/ceramic (Al/α-Al2 O3 ) systems: a parallel molecular dynamics simulation study","authors":"G. Aral","doi":"10.3906/fiz-1905-32","DOIUrl":"https://doi.org/10.3906/fiz-1905-32","url":null,"abstract":"The reactive wetting process of a flat solid alumina (α -Al2 O3) ceramic surface by metallic aluminum (Al) nanodroplets with different shapes (spherical, cylindrical, and layer) is studied using parallel molecular dynamics (MD) simulations based on a variable charge MD method, with focuses on heat transfer, mass transfer, and the structure of the reactive region at the Al/α -Al2 O3 interface. We find that the diffusion of oxygen (O) atoms from the substrate into the droplet leads to the formation of a continuous layer of reaction product at the interface. The diffusion length of oxygen atoms into the spherical Al droplet is found to be ~7.3 Å, and the number density of O atoms at the ~5 top layers of the substrate decreases substantially. As a result, the structural correlations near the reactive region differ considerably from those in the solid substrate. Heat generated by the exothermic reactions in the reactive region is transferred to both the substrate and the droplet. The heat transfer is found to be sensitive to droplet shape.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-1905-32","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48963316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The hypothetical particles dyons, which carry both electric and magnetic charges simultaneously, are widely discussed in application to electromagnetic theory and magnetohydrodynamics. Particularly, the duality-invariant field equations were suggested with suitable definitions of the dyon's electromagnetic characteristics. In this study, we propose an alternative formulation of the duality-invariant field equations for dyons based on octonion algebra. Octonions have been used to express the equations for potentials, field strengths, and sources in a more compact and consistent manner. Additionally, the octonionic form of the energy conservation law for dyons has been derived.
{"title":"Octonion form of duality-invariant field equations for dyons","authors":"M. E. Kansu, M. Tanişli, S. Demir","doi":"10.3906/fiz-1910-7","DOIUrl":"https://doi.org/10.3906/fiz-1910-7","url":null,"abstract":"The hypothetical particles dyons, which carry both electric and magnetic charges simultaneously, are widely discussed in application to electromagnetic theory and magnetohydrodynamics. Particularly, the duality-invariant field equations were suggested with suitable definitions of the dyon's electromagnetic characteristics. In this study, we propose an alternative formulation of the duality-invariant field equations for dyons based on octonion algebra. Octonions have been used to express the equations for potentials, field strengths, and sources in a more compact and consistent manner. Additionally, the octonionic form of the energy conservation law for dyons has been derived.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48914244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
: In order to enhance the capacitance of the Al/p-Si metal-semiconductor structure, the Alq 3 thin film was coated between these two layers using the spin coating technique as the interlayer. The electrical conductivity, real and imaginary parts of electric modulus, dielectric loss and dielectric constant parameters were examined at the room temperature by the help of admittance measurements in the 100 kHz to 1 MHz frequency range. The effect of frequency on the dielectric constant and dielectric loss values is negligible at the negative voltage values, up to about 0.8 V, and these values rapidly ascended after 0.8 V. The function of electrical modulus complex has been examined from the point of permittivity and impedance in order to clutch the contribution of the particle border on the relaxation mechanism of the materials. It is established that the examined dielectric parameters strongly correlated with the voltage and frequency. As a result, the changes in the dielectric parameters and electrical modulus due to the varying frequency were described as the results of relaxation process, polarization and surface conditions. Furthermore, it could be stated that the Alq 3 material used in the interfacial layer is a useful material which could be used in addition to the conventional materials.
{"title":"Frequency and voltage dependence of electrical conductivity, complex electric modulus, and dielectric properties of Al/Alq3/p-Si structure","authors":"I. Orak, A. Karabulut","doi":"10.3906/fiz-1907-21","DOIUrl":"https://doi.org/10.3906/fiz-1907-21","url":null,"abstract":": In order to enhance the capacitance of the Al/p-Si metal-semiconductor structure, the Alq 3 thin film was coated between these two layers using the spin coating technique as the interlayer. The electrical conductivity, real and imaginary parts of electric modulus, dielectric loss and dielectric constant parameters were examined at the room temperature by the help of admittance measurements in the 100 kHz to 1 MHz frequency range. The effect of frequency on the dielectric constant and dielectric loss values is negligible at the negative voltage values, up to about 0.8 V, and these values rapidly ascended after 0.8 V. The function of electrical modulus complex has been examined from the point of permittivity and impedance in order to clutch the contribution of the particle border on the relaxation mechanism of the materials. It is established that the examined dielectric parameters strongly correlated with the voltage and frequency. As a result, the changes in the dielectric parameters and electrical modulus due to the varying frequency were described as the results of relaxation process, polarization and surface conditions. Furthermore, it could be stated that the Alq 3 material used in the interfacial layer is a useful material which could be used in addition to the conventional materials.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-1907-21","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41490099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
İlknur GÜNDÜZ AYKAÇ, Aykut Can Önel, Burcu TOYDEMİR YAŞASUN, L. ÇOLAKEROL ARSLAN
We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3−x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.
{"title":"Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111)","authors":"İlknur GÜNDÜZ AYKAÇ, Aykut Can Önel, Burcu TOYDEMİR YAŞASUN, L. ÇOLAKEROL ARSLAN","doi":"10.3906/fiz-1909-17","DOIUrl":"https://doi.org/10.3906/fiz-1909-17","url":null,"abstract":"We investigated the effects of crystalline order on the structural and magnetic properties of ultrathin Mndoped Ge thin films grown by thermal diffusion. The dopant motion which occurs during the annealing stage appears to differ considerably depending upon whether the Ge layer is in a crystalline or an amorphous state. The details of the temperature-dependent magnetization curves reveal that the a-MnGe and c-MnGe films show ferromagnetic property up to 300K and ~250K, respectively. Ferromagnetic Mn5 Ge3 thin film with weakly anisotropic in-plane magnetization is formed on amorphous Ge thin film, while weakly ferromagnetic Mn5 Gex Si3−x nanostructures are developed on crystalline Ge thin film due to diffusion of Mn atoms through the Ge layer and interact with Si substrate.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2020-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48671624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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