Pub Date : 2022-03-04DOI: 10.1007/s40820-022-00814-8
Ji Young Kim, Guicheng Liu, Ryanda Enggar Anugrah Ardhi, Jihun Park, Hansung Kim, Joong Kee Lee
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Pub Date : 2022-03-02DOI: 10.1007/s40820-022-00813-9
Minh Tam Hoang, Amandeep Singh Pannu, Yang Yang, Sepideh Madani, Paul Shaw, Prashant Sonar, Tuquabo Tesfamichael, Hongxia Wang
The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. In particular, nanocrystals (NCs) of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications. However, the presence of surface defects on the NCs negatively impacts their performance in devices. Herein, we report a compatible facial post-treatment of CsPbI3 nanocrystals using guanidinium iodide (GuI). It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI3 nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m−2 and a peak current density of 10.8 cd A−1). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T50 of 20 min (at current density of 25 mA cm−2), outperforming the untreated devices (T50 ~ 6 min).
在过去的十年中,金属卤化物钙钛矿的显著发展使它们有望成为下一代光电材料。特别是无机钙钛矿的纳米晶体(NCs)在发光和显示应用中表现出优异的性能。然而,nc表面缺陷的存在会对其在器件中的性能产生负面影响。在此,我们报道了使用碘化胍(GuI)对CsPbI3纳米晶体进行相容的面部后处理。研究发现,由于碘离子和胍离子的有益贡献,GuI处理有效地钝化了纳米碳表面的卤化物空位缺陷,同时提供了有效的表面保护和激子约束。结果表明,处理后的CsPbI3纳米晶体薄膜的发光和电荷输运性能显著增强,制备出高性能发光二极管,最高外量子效率为13.8%,亮度高(峰值亮度为7039 cd m−2,峰值电流密度为10.8 cd a−1)。EQE比未处理设备的性能高出三倍以上(EQE: 3.8%)。处理后器件的工作半衰期也显著提高,T50为20 min(电流密度为25 mA cm−2),优于未处理器件(T50 ~ 6 min)。
{"title":"Surface Treatment of Inorganic CsPbI3 Nanocrystals with Guanidinium Iodide for Efficient Perovskite Light-Emitting Diodes with High Brightness","authors":"Minh Tam Hoang, Amandeep Singh Pannu, Yang Yang, Sepideh Madani, Paul Shaw, Prashant Sonar, Tuquabo Tesfamichael, Hongxia Wang","doi":"10.1007/s40820-022-00813-9","DOIUrl":"10.1007/s40820-022-00813-9","url":null,"abstract":"<div><p>The remarkable evolution of metal halide perovskites in the past decade makes them promise for next-generation optoelectronic material. In particular, nanocrystals (NCs) of inorganic perovskites have demonstrated excellent performance for light-emitting and display applications. However, the presence of surface defects on the NCs negatively impacts their performance in devices. Herein, we report a compatible facial post-treatment of CsPbI<sub>3</sub> nanocrystals using guanidinium iodide (GuI). It is found that the GuI treatment effectively passivated the halide vacancy defects on the surface of the NCs while offering effective surface protection and exciton confinement thanks to the beneficial contribution of iodide and guanidinium cation. As a consequence, the film of treated CsPbI<sub>3</sub> nanocrystals exhibited significantly enhanced luminescence and charge transport properties, leading to high-performance light-emitting diode with maximum external quantum efficiency of 13.8% with high brightness (peak luminance of 7039 cd m<sup>−2</sup> and a peak current density of 10.8 cd A<sup>−1</sup>). The EQE is over threefold higher than performance of untreated device (EQE: 3.8%). The operational half-lifetime of the treated devices also was significantly improved with T<sub>50</sub> of 20 min (at current density of 25 mA cm<sup>−2</sup>), outperforming the untreated devices (T<sub>50</sub> ~ 6 min). \u0000</p><figure><div><div><div><picture><source><img></source></picture></div></div></div></figure></div>","PeriodicalId":48779,"journal":{"name":"Nano-Micro Letters","volume":null,"pages":null},"PeriodicalIF":26.6,"publicationDate":"2022-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-022-00813-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4095431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-25DOI: 10.1007/s40820-022-00809-5
Qi Li, Xuan Zhao, Zheng Zhang, Xiaochen Xun, Bin Zhao, Liangxu Xu, Zhuo Kang, Qingliang Liao, Yue Zhang
The employment of microwave absorbents is highly desirable to address the increasing threats of electromagnetic pollution. Importantly, developing ultrathin absorbent is acknowledged as a linchpin in the design of lightweight and flexible electronic devices, but there are remaining unprecedented challenges. Herein, the self-assembly VS4/rGO heterostructure is constructed to be engineered as ultrathin microwave absorbent through the strategies of architecture design and interface engineering. The microarchitecture and heterointerface of VS4/rGO heterostructure can be regulated by the generation of VS4 nanorods anchored on rGO, which can effectively modulate the impedance matching and attenuation constant. The maximum reflection loss of 2VS4/rGO40 heterostructure can reach − 43.5 dB at 14 GHz with the impedance matching and attenuation constant approaching 0.98 and 187, respectively. The effective absorption bandwidth of 4.8 GHz can be achieved with an ultrathin thickness of 1.4 mm. The far-reaching comprehension of the heterointerface on microwave absorption performance is explicitly unveiled by experimental results and theoretical calculations. Microarchitecture and heterointerface synergistically inspire multi-dimensional advantages to enhance dipole polarization, interfacial polarization, and multiple reflections and scatterings of microwaves. Overall, the strategies of architecture design and interface engineering pave the way for achieving ultrathin and enhanced microwave absorption materials.
{"title":"Architecture Design and Interface Engineering of Self-assembly VS4/rGO Heterostructures for Ultrathin Absorbent","authors":"Qi Li, Xuan Zhao, Zheng Zhang, Xiaochen Xun, Bin Zhao, Liangxu Xu, Zhuo Kang, Qingliang Liao, Yue Zhang","doi":"10.1007/s40820-022-00809-5","DOIUrl":"10.1007/s40820-022-00809-5","url":null,"abstract":"<div><p>The employment of microwave absorbents is highly desirable to address the increasing threats of electromagnetic pollution. Importantly, developing ultrathin absorbent is acknowledged as a linchpin in the design of lightweight and flexible electronic devices, but there are remaining unprecedented challenges. Herein, the self-assembly VS<sub>4</sub>/rGO heterostructure is constructed to be engineered as ultrathin microwave absorbent through the strategies of architecture design and interface engineering. The microarchitecture and heterointerface of VS<sub>4</sub>/rGO heterostructure can be regulated by the generation of VS<sub>4</sub> nanorods anchored on rGO, which can effectively modulate the impedance matching and attenuation constant. The maximum reflection loss of 2VS<sub>4</sub>/rGO40 heterostructure can reach − 43.5 dB at 14 GHz with the impedance matching and attenuation constant approaching 0.98 and 187, respectively. The effective absorption bandwidth of 4.8 GHz can be achieved with an ultrathin thickness of 1.4 mm. The far-reaching comprehension of the heterointerface on microwave absorption performance is explicitly unveiled by experimental results and theoretical calculations. Microarchitecture and heterointerface synergistically inspire multi-dimensional advantages to enhance dipole polarization, interfacial polarization, and multiple reflections and scatterings of microwaves. Overall, the strategies of architecture design and interface engineering pave the way for achieving ultrathin and enhanced microwave absorption materials.</p><figure><div><div><div><picture><source><img></source></picture></div></div></div></figure></div>","PeriodicalId":48779,"journal":{"name":"Nano-Micro Letters","volume":null,"pages":null},"PeriodicalIF":26.6,"publicationDate":"2022-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40820-022-00809-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4964053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}