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Thermal Field Optimization Through Numerical Simulation for the Growth of High Quality GaSb Single Crystal 高质量GaSb单晶生长的数值模拟热场优化
IF 1.9 4区 材料科学 Q3 Chemistry Pub Date : 2025-06-09 DOI: 10.1002/crat.202500041
Wenwen Yang, Youwen Zhao, Hui Xie, Chenhui Li, Xinyu Lv, Yihan Bai, Guowei Wang, Jiaoqing Pan, Guiying Shen

As an important III–V semiconductor material for infrared applications, gallium antimonide (GaSb) single crystals require high quality with excellent lattice perfection, making it necessary to establish an ideal thermal field during the liquid encapsulated Czochralski (LEC) growth process. In this study, global transient numerical simulations are carried out to analyze the effects of growth parameters on the temperature distribution, melt convection structure, and solid–liquid interface deflection during the LEC growth of 3-inch-diameter GaSb crystals. Additionally, an innovative bottom heater is introduced to optimize the thermal distribution. The simulation results demonstrate that the number of melt vortices decreases from three to two when the crucible rotation rate is 2 rpm, significantly reducing the solid–liquid interface deflection. A pulling rate of 8 mm/h reduces local overheating at the interface, thereby minimizing deflection and promoting stable growth. The addition of a bottom heater improves the melt temperature distribution, reduces melt flow intensity, and enhances interface flatness. The average etch pit density (EPD) of the 3-inch (100) GaSb substrate is reduced from 2842 to 147 cm⁻2 after thermal field optimization, demonstrating a 94.8% reduction in dislocation density. This work establishes a scalable framework for the optimization of compound semiconductor crystal growth.

作为红外领域重要的III-V型半导体材料,锑化镓(GaSb)单晶的质量要求高,晶格完美性好,因此在液体封装式奇克拉尔斯基(LEC)生长过程中需要建立理想的热场。本研究采用全局瞬态数值模拟方法,分析了生长参数对3英寸直径GaSb晶体LEC生长过程中温度分布、熔体对流结构和固液界面偏转的影响。此外,还引入了一种创新的底部加热器,以优化热分布。仿真结果表明,当坩埚转速为2 rpm时,熔体漩涡数从3个减少到2个,显著降低了固液界面偏转。8 mm/h的拉拔速率可以减少界面的局部过热,从而最大限度地减少挠曲并促进稳定生长。底部加热器的加入改善了熔体温度分布,降低了熔体流动强度,提高了界面平整度。热场优化后,3英寸(100)GaSb衬底的平均蚀刻坑密度(EPD)从2842降低到147 cm⁻2,位错密度降低了94.8%。这项工作为优化化合物半导体晶体生长建立了一个可扩展的框架。
{"title":"Thermal Field Optimization Through Numerical Simulation for the Growth of High Quality GaSb Single Crystal","authors":"Wenwen Yang,&nbsp;Youwen Zhao,&nbsp;Hui Xie,&nbsp;Chenhui Li,&nbsp;Xinyu Lv,&nbsp;Yihan Bai,&nbsp;Guowei Wang,&nbsp;Jiaoqing Pan,&nbsp;Guiying Shen","doi":"10.1002/crat.202500041","DOIUrl":"https://doi.org/10.1002/crat.202500041","url":null,"abstract":"<p>As an important III–V semiconductor material for infrared applications, gallium antimonide (GaSb) single crystals require high quality with excellent lattice perfection, making it necessary to establish an ideal thermal field during the liquid encapsulated Czochralski (LEC) growth process. In this study, global transient numerical simulations are carried out to analyze the effects of growth parameters on the temperature distribution, melt convection structure, and solid–liquid interface deflection during the LEC growth of 3-inch-diameter GaSb crystals. Additionally, an innovative bottom heater is introduced to optimize the thermal distribution. The simulation results demonstrate that the number of melt vortices decreases from three to two when the crucible rotation rate is 2 rpm, significantly reducing the solid–liquid interface deflection. A pulling rate of 8 mm/h reduces local overheating at the interface, thereby minimizing deflection and promoting stable growth. The addition of a bottom heater improves the melt temperature distribution, reduces melt flow intensity, and enhances interface flatness. The average etch pit density (EPD) of the 3-inch (100) GaSb substrate is reduced from 2842 to 147 cm⁻<sup>2</sup> after thermal field optimization, demonstrating a 94.8% reduction in dislocation density. This work establishes a scalable framework for the optimization of compound semiconductor crystal growth.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 8","pages":""},"PeriodicalIF":1.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation, Characterization, and Transformation Relationship of Gimeracil Crystal Forms P and L 晶型P和L的制备、表征及转变关系
IF 1.9 4区 材料科学 Q3 Chemistry Pub Date : 2025-06-09 DOI: 10.1002/crat.202400279
Lihai Zhai, Lihong Guo, Jiaming Li, Chao Huang, Juju Wang, Guimin Zhang

In this study, the crystal forms P and L of gimeracil are prepared and characterized by various solid-state analysis methods (powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FT-IR), polarizing microscope (PLM), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), dynamic vapor sorption (DVS)). The melting point, solubility, crystal habit, and hygroscopicity of the two crystal forms are better understood. By combining the competitive slurry experiment, hot stage microscopy (HSM) experiments, and dynamic method measurements of the solubility curves of two crystal forms in purified water, methanol, ethanol, isopropanol, and n-butanol, the transformation relationship between the two crystal forms is studied. Crystal form L is a thermodynamically stable crystal form relative to crystal form P. At the same time, various methods for preparing crystal forms P and L are studied. Overall, this study provides a reference for crystal forms' transformation relationship and selective control of crystal forms.

本研究采用粉末x射线衍射(PXRD)、傅里叶变换红外光谱(FT-IR)、偏光显微镜(PLM)、扫描电镜(SEM)、热重分析(TGA)、差示扫描量热法(DSC)、动态蒸气吸附法(DVS)等多种固相分析方法对gimeracil的P和L晶型进行了制备和表征。对两种晶体的熔点、溶解度、结晶习性和吸湿性有了较好的了解。结合竞争浆体实验、热段显微镜(HSM)实验和动态方法测量两种晶型在纯水、甲醇、乙醇、异丙醇和正丁醇中的溶解度曲线,研究了两种晶型之间的转化关系。晶型L相对于晶型P是一种热力学稳定的晶型。同时,研究了制备晶型P和L的各种方法。综上所述,本研究为晶体形态的转变关系和晶体形态的选择性控制提供了参考。
{"title":"Preparation, Characterization, and Transformation Relationship of Gimeracil Crystal Forms P and L","authors":"Lihai Zhai,&nbsp;Lihong Guo,&nbsp;Jiaming Li,&nbsp;Chao Huang,&nbsp;Juju Wang,&nbsp;Guimin Zhang","doi":"10.1002/crat.202400279","DOIUrl":"https://doi.org/10.1002/crat.202400279","url":null,"abstract":"<p>In this study, the crystal forms P and L of gimeracil are prepared and characterized by various solid-state analysis methods (powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FT-IR), polarizing microscope (PLM), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), dynamic vapor sorption (DVS)). The melting point, solubility, crystal habit, and hygroscopicity of the two crystal forms are better understood. By combining the competitive slurry experiment, hot stage microscopy (HSM) experiments, and dynamic method measurements of the solubility curves of two crystal forms in purified water, methanol, ethanol, isopropanol, and n-butanol, the transformation relationship between the two crystal forms is studied. Crystal form L is a thermodynamically stable crystal form relative to crystal form P. At the same time, various methods for preparing crystal forms P and L are studied. Overall, this study provides a reference for crystal forms' transformation relationship and selective control of crystal forms.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 8","pages":""},"PeriodicalIF":1.9,"publicationDate":"2025-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144811413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Advances in PVT Growth of Large-Diameter, High-Quality Aluminum Nitride Single Crystals 大直径高质量氮化铝单晶PVT生长研究进展
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-06-02 DOI: 10.1002/crat.202500038
Wenliang Li, Qianling Liu, Jun Tan, Guangze He, Baikui Li, Zhenhua Sun, Honglei Wu

Aluminum Nitride (AlN), an ultra-wide bandgap semiconductor, boasts a direct bandgap of 6.2 eV, exceptional thermal conductivity (340 W m⁻¹ K⁻¹), and a high breakdown electric field (15.4 MV cm⁻¹), making it highly attractive for deep ultraviolet optoelectronics and high-frequency power applications. Despite these advantages, the industrial deployment of AlN is impeded by the challenges in producing large, defect-controlled single crystals. The Physical Vapor Transport (PVT) method has emerged as a leading technique for fabricating high-quality AlN crystals. This review systematically examines recent technological breakthroughs in PVT-grown AlN, including both homogeneous and heterogeneous substrate strategies, thermal field and stress management, mechanisms of point defect formation, and the integration of simulation techniques for process optimization. Innovations in temperature gradient control, gas-phase composition, seed crystal orientation, and novel crucible designs have enabled the stable growth of 2–4 inch AlN single crystals with markedly reduced impurity levels. Future research should emphasize the integration of multi-scale modeling with experimental validation to surmount existing growth limitations and accelerate the practical application of AlN in advanced electronic devices.

氮化铝(AlN)是一种超宽带隙半导体,具有6.2 eV的直接带隙,优异的导热性(340 W m⁻¹K⁻¹)和高击穿电场(15.4 MV cm⁻¹),使其在深紫外光电子和高频电源应用中具有很高的吸引力。尽管有这些优势,AlN的工业部署受到生产大型缺陷控制单晶的挑战的阻碍。物理气相输运(PVT)方法已成为制造高质量AlN晶体的主要技术。本文系统地研究了pvt生长AlN的最新技术突破,包括均质和非均质衬底策略、热场和应力管理、点缺陷形成机制以及工艺优化模拟技术的集成。在温度梯度控制、气相组成、晶种取向和新型坩埚设计方面的创新,使2-4英寸AlN单晶能够稳定生长,杂质含量显著降低。未来的研究应强调多尺度建模与实验验证的结合,以克服现有的生长限制,加快AlN在先进电子器件中的实际应用。
{"title":"Recent Advances in PVT Growth of Large-Diameter, High-Quality Aluminum Nitride Single Crystals","authors":"Wenliang Li,&nbsp;Qianling Liu,&nbsp;Jun Tan,&nbsp;Guangze He,&nbsp;Baikui Li,&nbsp;Zhenhua Sun,&nbsp;Honglei Wu","doi":"10.1002/crat.202500038","DOIUrl":"https://doi.org/10.1002/crat.202500038","url":null,"abstract":"<p>Aluminum Nitride (AlN), an ultra-wide bandgap semiconductor, boasts a direct bandgap of 6.2 eV, exceptional thermal conductivity (340 W m⁻¹ K⁻¹), and a high breakdown electric field (15.4 MV cm⁻¹), making it highly attractive for deep ultraviolet optoelectronics and high-frequency power applications. Despite these advantages, the industrial deployment of AlN is impeded by the challenges in producing large, defect-controlled single crystals. The Physical Vapor Transport (PVT) method has emerged as a leading technique for fabricating high-quality AlN crystals. This review systematically examines recent technological breakthroughs in PVT-grown AlN, including both homogeneous and heterogeneous substrate strategies, thermal field and stress management, mechanisms of point defect formation, and the integration of simulation techniques for process optimization. Innovations in temperature gradient control, gas-phase composition, seed crystal orientation, and novel crucible designs have enabled the stable growth of 2–4 inch AlN single crystals with markedly reduced impurity levels. Future research should emphasize the integration of multi-scale modeling with experimental validation to surmount existing growth limitations and accelerate the practical application of AlN in advanced electronic devices.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unveiling the Degradation Mechanism of Sulfide Concentration on the Corrosion Behavior of CoCrFeNiTiMo0.1 High-Entropy Alloy in Acidified NaCl Solution 揭示了硫化物浓度对CoCrFeNiTiMo0.1高熵合金在酸化NaCl溶液中腐蚀行为的降解机理
IF 1.9 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-29 DOI: 10.1002/crat.202400209
Kang Ren, Juanqin Xue, Yongqiang Tian, Liangliang Su, Xiaojiang Tian

In this work, the effect of sulfide concentration on the passivation behavior and film chemistry of CoCrFeNiTiMo0.1 high-entropy alloy (HEA) is systematically investigated by electrochemical measurements and XPS methods. Electrochemical results elucidate that sulfide can tremendously exacerbate the passive film degradation kinetics as reflected by the raised dissolution current. The main reason that sulfide has a detrimental influence on the passivation behavior and the anti-corrosion behavior is also discussed in detail. The sulfide can exhibit preferential adsorption in the passive film, which can prevent the passivation process by competitively occupying the coordination sites for hydroxyl ion adsorption that are hydroxylation precursors. Moreover, due to the adsorbed responses, the composition, thickness, defect density, and compactness of the passive film are altered, triggering in distinct differences in the structural changes of the passive film. This results in a significantly aggravating effect on its corrosion behavior consequently.

本文采用电化学测量和XPS方法系统地研究了硫化物浓度对CoCrFeNiTiMo0.1高熵合金(HEA)钝化行为和膜化学的影响。电化学结果表明,硫化物极大地加剧了钝化膜的降解动力学,这反映在溶解电流的升高上。并详细讨论了硫化物对钝化性能和抗腐蚀性能产生不利影响的主要原因。硫化物可以在钝化膜中表现出优先吸附,这可以通过竞争性地占据羟基离子吸附的配位位点(羟基化前体)来阻止钝化过程。此外,由于吸附反应,改变了钝化膜的组成、厚度、缺陷密度和致密性,导致了钝化膜结构变化的明显差异。这导致其腐蚀行为显著恶化。
{"title":"Unveiling the Degradation Mechanism of Sulfide Concentration on the Corrosion Behavior of CoCrFeNiTiMo0.1 High-Entropy Alloy in Acidified NaCl Solution","authors":"Kang Ren,&nbsp;Juanqin Xue,&nbsp;Yongqiang Tian,&nbsp;Liangliang Su,&nbsp;Xiaojiang Tian","doi":"10.1002/crat.202400209","DOIUrl":"https://doi.org/10.1002/crat.202400209","url":null,"abstract":"<p>In this work, the effect of sulfide concentration on the passivation behavior and film chemistry of CoCrFeNiTiMo<sub>0.1</sub> high-entropy alloy (HEA) is systematically investigated by electrochemical measurements and XPS methods. Electrochemical results elucidate that sulfide can tremendously exacerbate the passive film degradation kinetics as reflected by the raised dissolution current. The main reason that sulfide has a detrimental influence on the passivation behavior and the anti-corrosion behavior is also discussed in detail. The sulfide can exhibit preferential adsorption in the passive film, which can prevent the passivation process by competitively occupying the coordination sites for hydroxyl ion adsorption that are hydroxylation precursors. Moreover, due to the adsorbed responses, the composition, thickness, defect density, and compactness of the passive film are altered, triggering in distinct differences in the structural changes of the passive film. This results in a significantly aggravating effect on its corrosion behavior consequently.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 8","pages":""},"PeriodicalIF":1.9,"publicationDate":"2025-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144809270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and Computational Investigation of Fluorene Single Crystal for Optoelectronic and Scintillator Applications 荧光单晶用于光电和闪烁体的实验与计算研究
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-28 DOI: 10.1002/crat.202400261
Saravanan Chandran, Ravikumar Nattudurai, Martin Britto Dhas Sathiyadhas Amalapushpam, Ikhyun Kima, Anitha Kandasamy, Jeyanthinath Mayandi

Fluorene (C13H10) single crystals (4 ×3 × 0.5 mm3) were grown via slow evaporation at room temperature to evaluate their potential for organic scintillator applications. Powder X-ray diffraction (PXRD) confirmed an orthorhombic crystal system. Ultravioletvisible (UVVis) spectroscopy showed a 3.7 eV optical band gap, 330 nm cutoff, and 52–70% transmittance. Proton nuclear magnetic resonance (1H NMR) validated aromatic and methylene environments. Thermal analysis (TGA/DTA) revealed stability up to 113 °C, with defined melting and decomposition points. Photoluminescence (PL) exhibited blue emission at 428 nm under 330 nm excitation. Fourier-transform infrared (FTIR) and Raman spectroscopy identified functional groups and vibrational modes. Fluorescence lifetimes measured by time-correlated single photon counting (TCSPC) were 1.1 ns (prompt) and 5.1 ns (delayed), supporting fast response behavior. Density functional theory (DFT) with the B3LYP/6−311G++ basis set and time-dependent DFT (TD-DFT) described the optimized structure, HOMOLUMO gap, electrostatic potential, and excited states. Hirshfeld surface analysis showed dominant H···H interactions (54.3%), indicating efficient packing and energy transfer. Overall, fluorene exhibits desirable optical, thermal, and electronic properties, making it a promising material for organic scintillation detectors.

在室温下通过缓慢蒸发生长芴(C13H10)单晶(4 ×3 × 0.5 mm3),以评估其在有机闪烁体中的应用潜力。粉末x射线衍射(PXRD)证实为正交晶系。紫外可见(UVVis)光谱结果表明,该材料的带隙为3.7 eV,截止波长为330 nm,透过率为52 ~ 70%。质子核磁共振(1H NMR)验证芳香和亚甲基环境。热分析(TGA/DTA)显示稳定性高达113°C,具有确定的熔点和分解点。在330nm的激发下,光致发光(PL)表现出428nm的蓝色发射。傅里叶变换红外(FTIR)和拉曼光谱识别了官能团和振动模式。时间相关单光子计数(TCSPC)测量的荧光寿命分别为1.1 ns(提示)和5.1 ns(延迟),支持快速响应行为。基于B3LYP/6−311g++基集的密度泛函理论(DFT)和时间相关的DFT (TD-DFT)描述了优化后的结构、HOMOLUMO间隙、静电势和激发态。Hirshfeld表面分析显示H···H相互作用占主导地位(54.3%),表明有效的填料和能量传递。总的来说,芴具有理想的光学、热学和电子特性,使其成为有机闪烁探测器的有前途的材料。
{"title":"Experimental and Computational Investigation of Fluorene Single Crystal for Optoelectronic and Scintillator Applications","authors":"Saravanan Chandran,&nbsp;Ravikumar Nattudurai,&nbsp;Martin Britto Dhas Sathiyadhas Amalapushpam,&nbsp;Ikhyun Kima,&nbsp;Anitha Kandasamy,&nbsp;Jeyanthinath Mayandi","doi":"10.1002/crat.202400261","DOIUrl":"https://doi.org/10.1002/crat.202400261","url":null,"abstract":"<p>Fluorene (C<sub>13</sub>H<sub>10</sub>) single crystals (4 ×3 × 0.5 mm<sup>3</sup>) were grown via slow evaporation at room temperature to evaluate their potential for organic scintillator applications. Powder X-ray diffraction (PXRD) confirmed an orthorhombic crystal system. Ultravioletvisible (UVVis) spectroscopy showed a 3.7 eV optical band gap, 330 nm cutoff, and 52–70% transmittance. Proton nuclear magnetic resonance (<sup>1</sup>H NMR) validated aromatic and methylene environments. Thermal analysis (TGA/DTA) revealed stability up to 113 °C, with defined melting and decomposition points. Photoluminescence (PL) exhibited blue emission at 428 nm under 330 nm excitation. Fourier-transform infrared (FTIR) and Raman spectroscopy identified functional groups and vibrational modes. Fluorescence lifetimes measured by time-correlated single photon counting (TCSPC) were 1.1 ns (prompt) and 5.1 ns (delayed), supporting fast response behavior. Density functional theory (DFT) with the B3LYP/6−311G++ basis set and time-dependent DFT (TD-DFT) described the optimized structure, HOMOLUMO gap, electrostatic potential, and excited states. Hirshfeld surface analysis showed dominant H···H interactions (54.3%), indicating efficient packing and energy transfer. Overall, fluorene exhibits desirable optical, thermal, and electronic properties, making it a promising material for organic scintillation detectors.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Situ Growth of Quantum Dots in Glass Matrices: Novel Paradigms for Advanced Optical Materials 玻璃基质中量子点的原位生长:先进光学材料的新范例
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-24 DOI: 10.1002/crat.202500030
Xushun Tao, Chengran Zhang, Jiankang Zhou, Guangyong Xu, Zhengtao Deng

Quantum dots (QDs) are semiconductor nanocrystals with superior quantum efficiency, narrow emission linewidths, and tunable bandgaps, making them valuable in optoelectronics. However, their commercialization is hindered by instability under stress and environmental concerns related to heavy metal leaching. To address these issues, advanced encapsulation strategies, particularly using inorganic glass matrices (silicate, phosphate, borate), are crucial. This review examines the structure-property relationships between these matrices and QD variants (perovskite, chalcogenide). It highlights how glass host engineering through network modifiers and phase separation control affects QD growth, defect passivation, and stability. Host-guest interactions at the glass-QD interface enhance photoluminescence quantum yield (15–40%), narrow emission linewidths, and improve thermal quenching resistance (30–50% efficiency retention at 150 °C). These advancements enable emerging applications in solid-state lighting, mini-LED backlights, and X-ray detectors. This analysis provides insights into glass-mediated QD engineering and paves the way for eco-friendly photonic materials.

量子点(QDs)是一种半导体纳米晶体,具有优异的量子效率、窄的发射线宽和可调谐的带隙,使其在光电子学中具有重要价值。然而,它们的商业化受到压力下的不稳定性和与重金属浸出有关的环境问题的阻碍。为了解决这些问题,先进的封装策略,特别是使用无机玻璃基质(硅酸盐、磷酸盐、硼酸盐)至关重要。本文综述了这些基质与QD变体(钙钛矿、硫系化物)之间的结构-性质关系。它强调了通过网络改性剂和相分离控制的玻璃宿主工程如何影响量子点生长,缺陷钝化和稳定性。在玻璃- qd界面的主客体相互作用增强了光致发光量子产率(15-40%),窄发射线宽,并提高了热猝灭性(在150°C下效率保持在30-50%)。这些进步使固态照明,微型led背光和x射线探测器的新兴应用成为可能。这一分析为玻璃介导的量子点工程提供了见解,并为环保光子材料铺平了道路。
{"title":"In Situ Growth of Quantum Dots in Glass Matrices: Novel Paradigms for Advanced Optical Materials","authors":"Xushun Tao,&nbsp;Chengran Zhang,&nbsp;Jiankang Zhou,&nbsp;Guangyong Xu,&nbsp;Zhengtao Deng","doi":"10.1002/crat.202500030","DOIUrl":"https://doi.org/10.1002/crat.202500030","url":null,"abstract":"<p>Quantum dots (QDs) are semiconductor nanocrystals with superior quantum efficiency, narrow emission linewidths, and tunable bandgaps, making them valuable in optoelectronics. However, their commercialization is hindered by instability under stress and environmental concerns related to heavy metal leaching. To address these issues, advanced encapsulation strategies, particularly using inorganic glass matrices (silicate, phosphate, borate), are crucial. This review examines the structure-property relationships between these matrices and QD variants (perovskite, chalcogenide). It highlights how glass host engineering through network modifiers and phase separation control affects QD growth, defect passivation, and stability. Host-guest interactions at the glass-QD interface enhance photoluminescence quantum yield (15–40%), narrow emission linewidths, and improve thermal quenching resistance (30–50% efficiency retention at 150 °C). These advancements enable emerging applications in solid-state lighting, mini-LED backlights, and X-ray detectors. This analysis provides insights into glass-mediated QD engineering and paves the way for eco-friendly photonic materials.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal Behaviors, Hirshfeld Surface Analysis and Impact of Shock Wave on Glycine Zinc Sulphate Pentahydrate Single Crystal 激波对甘氨酸五水硫酸锌单晶的热行为、赫希菲尔德表面分析及影响
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-14 DOI: 10.1002/crat.202500016
Kiran, N. Vijayan, N. Sarkar,  Vinod,  Jyoti, Divyansh Joshi,  Chetan

This article focuses on the growth and analysis of bulk-size glycine zinc sulphate pentahydrate (GZS) single crystal. The structure of the compound is initially analyzed by single-crystal X-ray diffraction. Hirshfeld surface (HS) is analyzed to visualize the distribution of electron density in the GZS crystalline structure. The laser damage threshold (LDT) of GZS is measured using a nanosecond pulsed laser at 1064 nm. Thereafter, the thermal behaviors are examined through thermogravimetric analysis at different heating rates. The activation energy calculations are performed through the Coats-Redfern method. To see the response of GZS crystal under shock wave application, changes in the crystalline quality and optical transmittance are noted. Rocking curve is recorded and FWHM values are calculated to examine the defect behavior due to shock and it is correlated to the transmittance spectra obtained through UV–vis spectroscopy. Bandgap are calculated by Tauc's plot to see the phase stability of the compound under shock wave treatment.

本文主要研究了五水甘氨酸硫酸锌(GZS)单晶的生长和分析。用单晶x射线衍射初步分析了化合物的结构。利用Hirshfeld表面(HS)分析了GZS晶体结构中电子密度的分布。利用1064 nm的纳秒脉冲激光测量了GZS的激光损伤阈值(LDT)。然后,通过热重分析考察了不同升温速率下的热行为。通过Coats-Redfern方法计算活化能。为了观察GZS晶体在激波作用下的响应,我们记录了晶体质量和透光率的变化。通过记录摆动曲线和计算FWHM值来考察缺陷在冲击下的行为,并将其与通过紫外-可见光谱获得的透射光谱相关联。用Tauc图计算带隙,观察化合物在激波作用下的相稳定性。
{"title":"Thermal Behaviors, Hirshfeld Surface Analysis and Impact of Shock Wave on Glycine Zinc Sulphate Pentahydrate Single Crystal","authors":"Kiran,&nbsp;N. Vijayan,&nbsp;N. Sarkar,&nbsp; Vinod,&nbsp; Jyoti,&nbsp;Divyansh Joshi,&nbsp; Chetan","doi":"10.1002/crat.202500016","DOIUrl":"https://doi.org/10.1002/crat.202500016","url":null,"abstract":"<p>This article focuses on the growth and analysis of bulk-size glycine zinc sulphate pentahydrate (GZS) single crystal. The structure of the compound is initially analyzed by single-crystal X-ray diffraction. Hirshfeld surface (HS) is analyzed to visualize the distribution of electron density in the GZS crystalline structure. The laser damage threshold (LDT) of GZS is measured using a nanosecond pulsed laser at 1064 nm. Thereafter, the thermal behaviors are examined through thermogravimetric analysis at different heating rates. The activation energy calculations are performed through the Coats-Redfern method. To see the response of GZS crystal under shock wave application, changes in the crystalline quality and optical transmittance are noted. Rocking curve is recorded and FWHM values are calculated to examine the defect behavior due to shock and it is correlated to the transmittance spectra obtained through UV–vis spectroscopy. Bandgap are calculated by Tauc's plot to see the phase stability of the compound under shock wave treatment.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Issue Information: Crystal Research and Technology 5'2025 发行信息:晶体研究与技术5’2025
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-09 DOI: 10.1002/crat.1585
{"title":"Issue Information: Crystal Research and Technology 5'2025","authors":"","doi":"10.1002/crat.1585","DOIUrl":"https://doi.org/10.1002/crat.1585","url":null,"abstract":"","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.1585","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143930401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magneto-Optical Kerr Effect and Ultrafast Demagnetization in the Bi, Mn: YIG Films with Perpendicular Magnetic Anisotropy 垂直磁各向异性Bi, Mn: YIG薄膜的磁光Kerr效应和超快退磁
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-06 DOI: 10.1002/crat.202400223
Wenhao Di, Jiewen Jiang, Jiamin Shang, Liangbi Su, Zhen Zhang, A. Stupakiewicz, A. M. Kalashnikova, Anhua Wu

The magneto-optical Kerr effect (MOKE) reflects the spin-orbit coupling in magnetic materials, so it can become a fundamentally important tool for studying the electronic structure of materials. Here the MOKE, and the ultrafast demagnetization process is presented for Bi and Mn-doped Y3Fe5O12 films with perpendicular magnetic anisotropy. The structural characterization indicated horizontal dipping has a large growth rate compared to vertical dipping, which will reduce cracks and improve the crystal quality. By analyzing the MOKE signals in different magnetic field directions and comparing them with the theoretical equations, it can be found that the quadratic MOKE values of YIG samples originate from the large perpendicular magnetic anisotropy previously described in YIG samples. Time-resolved MOKE measurements show that with increasing Bi3+ content, the spin-orbit coupling is enhanced, which results in the spin-lattice relaxation time constants becoming smaller, and the magnetization recovery processes are accelerated.

磁光克尔效应(MOKE)反映了磁性材料中的自旋轨道耦合,因此它可以成为研究材料电子结构的重要工具。本文研究了具有垂直磁各向异性的Bi和mn掺杂Y3Fe5O12薄膜的MOKE和超快退磁过程。结构表征表明,水平倾斜比垂直倾斜有更大的生长速率,可以减少裂纹,提高晶体质量。通过对不同磁场方向下的MOKE信号进行分析,并与理论方程进行比较,发现YIG样品的二次MOKE值来源于之前描述的YIG样品中较大的垂直磁各向异性。时间分辨MOKE测量表明,随着Bi3+含量的增加,自旋-轨道耦合增强,导致自旋-晶格弛豫时间常数变小,磁化恢复过程加快。
{"title":"Magneto-Optical Kerr Effect and Ultrafast Demagnetization in the Bi, Mn: YIG Films with Perpendicular Magnetic Anisotropy","authors":"Wenhao Di,&nbsp;Jiewen Jiang,&nbsp;Jiamin Shang,&nbsp;Liangbi Su,&nbsp;Zhen Zhang,&nbsp;A. Stupakiewicz,&nbsp;A. M. Kalashnikova,&nbsp;Anhua Wu","doi":"10.1002/crat.202400223","DOIUrl":"https://doi.org/10.1002/crat.202400223","url":null,"abstract":"<p>The magneto-optical Kerr effect (MOKE) reflects the spin-orbit coupling in magnetic materials, so it can become a fundamentally important tool for studying the electronic structure of materials. Here the MOKE, and the ultrafast demagnetization process is presented for Bi and Mn-doped Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> films with perpendicular magnetic anisotropy. The structural characterization indicated horizontal dipping has a large growth rate compared to vertical dipping, which will reduce cracks and improve the crystal quality. By analyzing the MOKE signals in different magnetic field directions and comparing them with the theoretical equations, it can be found that the quadratic MOKE values of YIG samples originate from the large perpendicular magnetic anisotropy previously described in YIG samples. Time-resolved MOKE measurements show that with increasing Bi<sup>3+</sup> content, the spin-orbit coupling is enhanced, which results in the spin-lattice relaxation time constants becoming smaller, and the magnetization recovery processes are accelerated.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 6","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144256216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxy and Topotaxy in the Aragonite-Calcite Polymorphism 文石-方解石多晶型的外延和拓扑结构
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2025-05-06 DOI: 10.1002/crat.202400221
D. Aquilano, S. Frisia, S. Ghignone, M. Bruno

The transformation between aragonite and calcite, the two most common CaCO3 polymorphs, is encountered both in geological and biological (nacre-like) minerals. Recently, the origin of the new polymorph hexaragonite at room temperature and pressure and analysed in detail the homoepitaxy as a new physical phenomenon for both structures is discussed. Here, at first distinguishing epitaxy from topotaxy, which rules the main mechanisms of calcite-aragonite transitions. Then, attempt to move from qualitative to quantitative descriptions of these transitions. Hence, it will deal with 2D (epitaxy) and 3D (topotaxy) conversions in the polymorphic system, in order to gain insight into their differences, resulting from literature experiments and calculation constraints.

文石和方解石是两种最常见的CaCO3多晶型矿物,它们之间的转化在地质和生物(珠状)矿物中都有遇到。最近,在室温和常压下,对六角石新多晶的起源进行了详细的分析,并讨论了同外延作为两种结构的新物理现象。本文首先区分了方解石-文石过渡的主要机制——外延和拓扑学。然后,尝试从定性到定量描述这些转变。因此,它将处理多晶系统中的2D(外延)和3D(拓扑)转换,以深入了解它们之间的差异,这是由文献实验和计算约束造成的。
{"title":"Epitaxy and Topotaxy in the Aragonite-Calcite Polymorphism","authors":"D. Aquilano,&nbsp;S. Frisia,&nbsp;S. Ghignone,&nbsp;M. Bruno","doi":"10.1002/crat.202400221","DOIUrl":"https://doi.org/10.1002/crat.202400221","url":null,"abstract":"<p>The transformation between aragonite and calcite, the two most common CaCO<sub>3</sub> polymorphs, is encountered both in geological and biological (nacre-like) minerals. Recently, the origin of the new polymorph hexaragonite at room temperature and pressure and analysed in detail the homoepitaxy as a new physical phenomenon for both structures is discussed. Here, at first distinguishing epitaxy from topotaxy, which rules the main mechanisms of calcite-aragonite transitions. Then, attempt to move from qualitative to quantitative descriptions of these transitions. Hence, it will deal with 2D (epitaxy) and 3D (topotaxy) conversions in the polymorphic system, in order to gain insight into their differences, resulting from literature experiments and calculation constraints.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"60 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202400221","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144598198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Crystal Research and Technology
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