Pub Date : 2024-07-02DOI: 10.35848/1347-4065/ad5e28
S. Takechi, Shoki Maeda, Shuhei Tominaga, Ryusei Naruse, Ayano Takahashi, Shinya Katayama, T. Miyachi, Masanori Kobayashi, O. Okudaira, N. Okada, Toshiharu Takahashi, Naoya Abe
We measured the resonant and anti-resonant frequencies of lead zirconate titanate (PZT) elements at various temperatures and investigated the change in the electromechanical coupling coefficient to clarify the temperature dependence of the elements. Based on these results, we performed a 20 MeV electron beam irradiation experiment on the PZT elements. We found that the electromechanical coupling coefficient decreased as the cumulative energy absorption due to beam irradiation increased, even when the effect of the temperature rise due to beam irradiation was negligible.
{"title":"Impact of high-energy electron beam irradiation on piezoelectric properties of lead zirconate titanate","authors":"S. Takechi, Shoki Maeda, Shuhei Tominaga, Ryusei Naruse, Ayano Takahashi, Shinya Katayama, T. Miyachi, Masanori Kobayashi, O. Okudaira, N. Okada, Toshiharu Takahashi, Naoya Abe","doi":"10.35848/1347-4065/ad5e28","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5e28","url":null,"abstract":"\u0000 We measured the resonant and anti-resonant frequencies of lead zirconate titanate (PZT) elements at various temperatures and investigated the change in the electromechanical coupling coefficient to clarify the temperature dependence of the elements. Based on these results, we performed a 20 MeV electron beam irradiation experiment on the PZT elements. We found that the electromechanical coupling coefficient decreased as the cumulative energy absorption due to beam irradiation increased, even when the effect of the temperature rise due to beam irradiation was negligible.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"38 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141687432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.35848/1347-4065/ad5d77
Jomar U. Tercero, Michiro Isobe, K. Karahashi, S. Hamaguchi
Molecular dynamics simulations were performed to understand the gas-surface interactions during silicon nitride (SiN) plasma-enhanced atomic layer etching (PE-ALE) processes with argon (Ar), krypton (Kr), and xenon (Xe) ion irradiations. Changes in the surface height, penetration depths of hydrofluorocarbon (HFC) species, and damaged layer thickness were examined over five PE-ALE cycles. The results showed that the PE-ALE process with Ar+ ions etched the SiN surface more efficiently than those with Kr+ or Xe+ ions under the otherwise same conditions. Slower etching in the case of Kr+ or Xe+ ion irradiation is likely caused by the accumulation of HFC species. It was also observed that the damaged layer thicknesses of the etched surfaces are nearly the same among those with Ar+, Kr+, and Xe+ ion irradiations.
{"title":"Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations","authors":"Jomar U. Tercero, Michiro Isobe, K. Karahashi, S. Hamaguchi","doi":"10.35848/1347-4065/ad5d77","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5d77","url":null,"abstract":"\u0000 Molecular dynamics simulations were performed to understand the gas-surface interactions during silicon nitride (SiN) plasma-enhanced atomic layer etching (PE-ALE) processes with argon (Ar), krypton (Kr), and xenon (Xe) ion irradiations. Changes in the surface height, penetration depths of hydrofluorocarbon (HFC) species, and damaged layer thickness were examined over five PE-ALE cycles. The results showed that the PE-ALE process with Ar+ ions etched the SiN surface more efficiently than those with Kr+ or Xe+ ions under the otherwise same conditions. Slower etching in the case of Kr+ or Xe+ ion irradiation is likely caused by the accumulation of HFC species. It was also observed that the damaged layer thicknesses of the etched surfaces are nearly the same among those with Ar+, Kr+, and Xe+ ion irradiations.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141709150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-14DOI: 10.35848/1347-4065/ad5897
Botong Li, Tiwei Chen, Li Zhang, Xiaodong Zhang, C. Zeng, yu hu, Zijing Huang, Kun Xu, Wenbo Tang, Wenhua Shi, Yong Cai, Zhongming Zeng, Baoshun Zhang
High-quality unintentionally doped (UID) (001) β-Ga2O3 homoepitaxial films were grown on native substrates through metalorganic chemical vapor deposition. The surface parallel grooves were repaired under low temperature and pressure condition, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm2/Vs. Enhancement-mode metal–oxide–semiconductor field-effect transistors were fabricated on the UID β-Ga2O3 film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673V. These results can serve a reference for (001) oriented lateral Ga2O3 power transistors and may contribute to the development of Ga2O3 power devices.
{"title":"Enhancement-mode Ga2O3 FETs with unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition","authors":"Botong Li, Tiwei Chen, Li Zhang, Xiaodong Zhang, C. Zeng, yu hu, Zijing Huang, Kun Xu, Wenbo Tang, Wenhua Shi, Yong Cai, Zhongming Zeng, Baoshun Zhang","doi":"10.35848/1347-4065/ad5897","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5897","url":null,"abstract":"\u0000 High-quality unintentionally doped (UID) (001) β-Ga2O3 homoepitaxial films were grown on native substrates through metalorganic chemical vapor deposition. The surface parallel grooves were repaired under low temperature and pressure condition, reaching the surface roughness of 2.22 nm and the high electron mobility of 74.6 cm2/Vs. Enhancement-mode metal–oxide–semiconductor field-effect transistors were fabricated on the UID β-Ga2O3 film, showing a positive turn-on threshold gate voltage of 4.2 V and a breakdown voltage of 673V. These results can serve a reference for (001) oriented lateral Ga2O3 power transistors and may contribute to the development of Ga2O3 power devices.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141341253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.35848/1347-4065/ad56e9
Shinya Yoshida, Y. Katsumata, Shuji Tanaka
This paper presents a novel form of Pb(Zr,Ti)O3 (PZT) thin film with a structure in which monocrystalline (Mono) PZT is sectioned with narrow mesh-like polycrystalline (Poly) PZT. The motivation is to overcome the inherent brittleness of piezoelectric Mono thin films. The design assumes that the Poly pattern will stop crack propagation within the Mono area. As a proof of concept, a Mono-Poly PZT composite thin film with a 20-µm-pitch and 2-µm-wide Poly pattern was sputter-deposited on a patterned underlayer on a Si substrate. Its piezoelectric properties were close to those of pure Mono PZT thin films, while its dielectric constant was significantly lower than those of pure Poly PZT thin films. Indentation tests confirmed the Poly patterns effectively stops crack propagation, which is likely to improve the mechanical durability of the overall film.
{"title":"Fabrication and characterization of monocrystalline-based composite Pb(Zr, Ti)O3 thin film patterned with polycrystalline crack stopper structure","authors":"Shinya Yoshida, Y. Katsumata, Shuji Tanaka","doi":"10.35848/1347-4065/ad56e9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad56e9","url":null,"abstract":"\u0000 This paper presents a novel form of Pb(Zr,Ti)O3 (PZT) thin film with a structure in which monocrystalline (Mono) PZT is sectioned with narrow mesh-like polycrystalline (Poly) PZT. The motivation is to overcome the inherent brittleness of piezoelectric Mono thin films. The design assumes that the Poly pattern will stop crack propagation within the Mono area. As a proof of concept, a Mono-Poly PZT composite thin film with a 20-µm-pitch and 2-µm-wide Poly pattern was sputter-deposited on a patterned underlayer on a Si substrate. Its piezoelectric properties were close to those of pure Mono PZT thin films, while its dielectric constant was significantly lower than those of pure Poly PZT thin films. Indentation tests confirmed the Poly patterns effectively stops crack propagation, which is likely to improve the mechanical durability of the overall film.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"124 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141360498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.35848/1347-4065/ad56ea
Yoshika Tsuda, Y. Muroya, K. Okamoto, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro
The suppression of stochastic effects is the most important issue in the development of resist materials. To suppress the stochastic effects in chemically amplified resists, a high acid generator concentration is required, which, however, likely affects the dissolution kinetics of resist films. In this study, the effects of substituents in the phenyl group of triphenylsulfonium triflate (TPS-TF) on the decomposition and dissolution kinetics of poly(4-hydroxystyrene) (PHS) films dispersed with monosubstituted TPS-TF were investigated using electron pulse radiolysis, γ-radiolysis, electron radiolysis, and quartz crystal microbalance. The phenyl group of TPS-TF was substituted with fluorine, iodine, or methyl groups at the fourth position. The electronegativity of the substituents had little effect on the reaction rate of the methanol-solvated electrons. The dipole moment of the TPS cation affected the C-S bond cleavage. The monosubstitution of the phenyl group of the TPS cation significantly affected the dissolution rate of the PHS films.
{"title":"Effects of substituents in triphenylsulfonium cation on its radiation-induced decomposition and dissolution kinetics of chemically amplified resists","authors":"Yoshika Tsuda, Y. Muroya, K. Okamoto, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro","doi":"10.35848/1347-4065/ad56ea","DOIUrl":"https://doi.org/10.35848/1347-4065/ad56ea","url":null,"abstract":"\u0000 The suppression of stochastic effects is the most important issue in the development of resist materials. To suppress the stochastic effects in chemically amplified resists, a high acid generator concentration is required, which, however, likely affects the dissolution kinetics of resist films. In this study, the effects of substituents in the phenyl group of triphenylsulfonium triflate (TPS-TF) on the decomposition and dissolution kinetics of poly(4-hydroxystyrene) (PHS) films dispersed with monosubstituted TPS-TF were investigated using electron pulse radiolysis, γ-radiolysis, electron radiolysis, and quartz crystal microbalance. The phenyl group of TPS-TF was substituted with fluorine, iodine, or methyl groups at the fourth position. The electronegativity of the substituents had little effect on the reaction rate of the methanol-solvated electrons. The dipole moment of the TPS cation affected the C-S bond cleavage. The monosubstitution of the phenyl group of the TPS cation significantly affected the dissolution rate of the PHS films.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"37 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141358870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-10DOI: 10.35848/1347-4065/ad565a
Akira Yoshikawa, T. Nagatomi, K. Nagase, Sho Sugiyama, L. Schowalter
In this study, a 21 nm-thick GaN layer with a single-step terrace surface was pseudomorphically grown on an AlN single-crystal substrate using metal organic vapor phase epitaxy by increasing the growth rate up to 1 μm/h at a growth temperature of 850℃ and a reactor pressure of 5 kPa. The growth temperature and rate were found to be the factors dominating the flatness and coverage of the thin-GaN layer, revealing that controlling the degree of Ga migration is crucial. Furthermore, threading dislocations was not observed for the thin-GaN layer, with a flat surface, grown on the AlN substrate.
{"title":"Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy","authors":"Akira Yoshikawa, T. Nagatomi, K. Nagase, Sho Sugiyama, L. Schowalter","doi":"10.35848/1347-4065/ad565a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad565a","url":null,"abstract":"\u0000 In this study, a 21 nm-thick GaN layer with a single-step terrace surface was pseudomorphically grown on an AlN single-crystal substrate using metal organic vapor phase epitaxy by increasing the growth rate up to 1 μm/h at a growth temperature of 850℃ and a reactor pressure of 5 kPa. The growth temperature and rate were found to be the factors dominating the flatness and coverage of the thin-GaN layer, revealing that controlling the degree of Ga migration is crucial. Furthermore, threading dislocations was not observed for the thin-GaN layer, with a flat surface, grown on the AlN substrate.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"107 38","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141362084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.35848/1347-4065/ad5560
Mari Hanai, Makiko Ito, Xiaobin Liang, Ken Nakajima
Using a atomic force microscope-based nanomechanics to measure the micromechanical properties of different polymer blends, we found that the miscibility of the blend system affects the phase structure and micromechanical properties at the nanoscale, which further affects macroscopic mechanical properties of materials. In the immiscible polypropylene / ethylene propylene diene rubber blends, the microscopic phase structure is connected to the macroscopic mechanical properties of the material, since the microscopic modulus of elasticity of the phases remains constant even if the blend ratio is changed. On the other hand, in the partial miscible polypropylene / styrene-ethylene-butylene-styrene block copolymer blends, the macroscopic mechanical properties of the material are determined by the combination of the microscopic phase structure and the microscopic elastic modulus, because the microscopic elastic modulus of each phase changes with the blending ratio.
{"title":"The study on micromechanical mechanism of PP/EPDM blends and PP/SEBS blends using atomic force microscopy-based nanomechanics","authors":"Mari Hanai, Makiko Ito, Xiaobin Liang, Ken Nakajima","doi":"10.35848/1347-4065/ad5560","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5560","url":null,"abstract":"\u0000 Using a atomic force microscope-based nanomechanics to measure the micromechanical properties of different polymer blends, we found that the miscibility of the blend system affects the phase structure and micromechanical properties at the nanoscale, which further affects macroscopic mechanical properties of materials. In the immiscible polypropylene / ethylene propylene diene rubber blends, the microscopic phase structure is connected to the macroscopic mechanical properties of the material, since the microscopic modulus of elasticity of the phases remains constant even if the blend ratio is changed. On the other hand, in the partial miscible polypropylene / styrene-ethylene-butylene-styrene block copolymer blends, the macroscopic mechanical properties of the material are determined by the combination of the microscopic phase structure and the microscopic elastic modulus, because the microscopic elastic modulus of each phase changes with the blending ratio.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 104","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141374674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.35848/1347-4065/ad55c0
Sittan Wongcharoen, Itaru Raifuku, Xianhuan Yu, Hidenori Kawanishi, Yvan Bonnassieux, Pere Roca I Cabarrocas, Y. Uraoka
Methylammonium lead iodide (CH3NH3PbI3; MAPbI3) films were fabricated from sputtered lead sulfide (PbS) films prepared at various substrate temperatures according to the Thornton structural zone model. PbS films were converted to lead iodide (PbI2) and finally to MAPbI3 in a two-step gas-phase reaction. The increase in substrate temperature caused the morphology to change to fibrous interconnected grains, which played an important role in improving the optoelectrical properties of perovskite films. Moreover, enhanced charge transport of MAPbI3 films was observed owing to the fibrous interconnected PbI2 precursor, which was confirmed by higher absorption coefficient and longer carrier lifetime.
{"title":"Optoelectronic properties of perovskite thin films derived from lead sulfide via radio frequency magnetron sputtering: effect of the substrate temperature","authors":"Sittan Wongcharoen, Itaru Raifuku, Xianhuan Yu, Hidenori Kawanishi, Yvan Bonnassieux, Pere Roca I Cabarrocas, Y. Uraoka","doi":"10.35848/1347-4065/ad55c0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad55c0","url":null,"abstract":"\u0000 Methylammonium lead iodide (CH3NH3PbI3; MAPbI3) films were fabricated from sputtered lead sulfide (PbS) films prepared at various substrate temperatures according to the Thornton structural zone model. PbS films were converted to lead iodide (PbI2) and finally to MAPbI3 in a two-step gas-phase reaction. The increase in substrate temperature caused the morphology to change to fibrous interconnected grains, which played an important role in improving the optoelectrical properties of perovskite films. Moreover, enhanced charge transport of MAPbI3 films was observed owing to the fibrous interconnected PbI2 precursor, which was confirmed by higher absorption coefficient and longer carrier lifetime.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141375762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.35848/1347-4065/ad555f
Masaya Takeuchi, Satoru Suzuki, Masaki Nakamura, Takashi Hata, Y. Nishiuchi, Kaori Tada, Noriaki Toyoda
We would like to improve detection sensitivity by making photoelectron transmission window (SiNx membrane) of liquid cell ultra-thin for liquid measurement using XPS or X-ray PEEM at UHV. In this study, thinning of the membrane using gas cluster ion beams (GCIB) was demonstrated and the burst pressure was compared with those thinned with atomic 400 eV Ar+ ions. It was shown that SiNx membranes thinned by GCIB was 2.5 times higher burst pressure than the Ar+ ions. In addition, improvement of sensitivity of characteristic X-ray from liquid-water induced by low-energy electrons was investigated. By using 4.5 nm thick SiNx membrane etched by GCIB, the X-ray intensity became 1.6 times higher than those from 11 nm thick pristine membrane at electron beam energy of 1.5 keV. This result showed good agreement with Monte Carlo simulation results of the electron-beam-induced X-ray emission from liquid-water beneath SiNx membrane.
{"title":"Highly sensitive electron-beam-induced X-ray detection from liquid using SiNx membrane ultrathinned by gas cluster ion beams","authors":"Masaya Takeuchi, Satoru Suzuki, Masaki Nakamura, Takashi Hata, Y. Nishiuchi, Kaori Tada, Noriaki Toyoda","doi":"10.35848/1347-4065/ad555f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad555f","url":null,"abstract":"\u0000 We would like to improve detection sensitivity by making photoelectron transmission window (SiNx membrane) of liquid cell ultra-thin for liquid measurement using XPS or X-ray PEEM at UHV. In this study, thinning of the membrane using gas cluster ion beams (GCIB) was demonstrated and the burst pressure was compared with those thinned with atomic 400 eV Ar+ ions. It was shown that SiNx membranes thinned by GCIB was 2.5 times higher burst pressure than the Ar+ ions. In addition, improvement of sensitivity of characteristic X-ray from liquid-water induced by low-energy electrons was investigated. By using 4.5 nm thick SiNx membrane etched by GCIB, the X-ray intensity became 1.6 times higher than those from 11 nm thick pristine membrane at electron beam energy of 1.5 keV. This result showed good agreement with Monte Carlo simulation results of the electron-beam-induced X-ray emission from liquid-water beneath SiNx membrane.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141371900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-05DOI: 10.35848/1347-4065/ad5480
A. Floriduz, Uiho Choi, E. Matioli
In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic chemical vapor deposition without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly grown on n-Si with a TMAl preflow not only present a better crystalline quality compared to the use of thin AlN buffers, but also exhibit orders-of-magnitude improvement in vertical current conduction between GaN and Si, thanks to the absence of highly resistive AlN layers. Our proposed technique opens a new pathway for the effective realization of fully-vertical GaN-on-Si devices.
{"title":"Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures","authors":"A. Floriduz, Uiho Choi, E. Matioli","doi":"10.35848/1347-4065/ad5480","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5480","url":null,"abstract":"\u0000 In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic chemical vapor deposition without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly grown on n-Si with a TMAl preflow not only present a better crystalline quality compared to the use of thin AlN buffers, but also exhibit orders-of-magnitude improvement in vertical current conduction between GaN and Si, thanks to the absence of highly resistive AlN layers. Our proposed technique opens a new pathway for the effective realization of fully-vertical GaN-on-Si devices.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"345 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141385982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：