Pub Date : 2024-05-01DOI: 10.35848/1347-4065/ad3e56
Wei Feng, Katsuya Kikuchi
To avoid the interconnect crowding in a planar structure, three-dimensional (3D) integrated technologies are necessary for realizing practical large-scale quantum annealing (QA) machines. We studied the heat transfer of a 3D packaging structure with superconducting through-silicon via for large-scale QA machines by finite element method simulation. The heat transfer becomes less efficient in the stacked structure. A high temperature of 57.0 mK is observed for the qubit chip, which degrades the quantum coherence of the qubit chip. We propose a heat transfer optimization method by increasing the number of bumps under the active interposer. Furthermore, by shortening the distance to the heat sink, the maximum temperature of the qubit chip is reduced to 18.1 mK. Our proposed heat transfer optimization methods are useful to provide a cryogenic temperature for stable qubit chip operation in a 3D packaging structure to realize practical-scale superconducting QA machines.
{"title":"Heat transfer study of 3D packaging structure with superconducting TSV for practical-scale quantum annealing machines","authors":"Wei Feng, Katsuya Kikuchi","doi":"10.35848/1347-4065/ad3e56","DOIUrl":"https://doi.org/10.35848/1347-4065/ad3e56","url":null,"abstract":"\u0000 To avoid the interconnect crowding in a planar structure, three-dimensional (3D) integrated technologies are necessary for realizing practical large-scale quantum annealing (QA) machines. We studied the heat transfer of a 3D packaging structure with superconducting through-silicon via for large-scale QA machines by finite element method simulation. The heat transfer becomes less efficient in the stacked structure. A high temperature of 57.0 mK is observed for the qubit chip, which degrades the quantum coherence of the qubit chip. We propose a heat transfer optimization method by increasing the number of bumps under the active interposer. Furthermore, by shortening the distance to the heat sink, the maximum temperature of the qubit chip is reduced to 18.1 mK. Our proposed heat transfer optimization methods are useful to provide a cryogenic temperature for stable qubit chip operation in a 3D packaging structure to realize practical-scale superconducting QA machines.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"11 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141054029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-29DOI: 10.35848/1347-4065/ad3925
Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki, Akira Yasui, K. Kakushima, Yuichiro Mitani, H. Nohira
The effect of plasma treatment on AlScN films measured by angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) is investigated. I It was confirmed that oxygen plasma treatment of AlScN tends to increase the oxide component relative to the nitride component in the film. The increase in the on/off ratio of the current in the MIM capacitor was attributed to the decrease in the number of nitrogen vacancies in AlScN. The decrease in the on/off ratio after further plasma oxidation treatment is due to the change from nitride to oxide film material on the surface side. It was also confirmed that the nitriding pretreatment for 1 min makes AlScN less susceptible to oxidation. Furthermore, the inhibition of oxidation was more pronounced for Sc atoms than for Al atoms. This suggests that the nitridation process reduced the number of nitrogen vacancies around Sc atoms.
通过角分辨硬 X 射线光电子能谱（HAXPES）测量，研究了等离子体处理对 AlScN 薄膜的影响。结果证实，对 AlScN 进行氧等离子处理往往会增加薄膜中的氧化物成分，而不是氮化物成分。MIM 电容器中电流导通/关断比的增加归因于 AlScN 中氮空位数量的减少。进一步等离子氧化处理后导通/关断比的降低是由于表面一侧的薄膜材料从氮化物变成了氧化物。研究还证实，氮化预处理 1 分钟可降低 AlScN 的氧化敏感性。此外，Sc 原子的氧化抑制作用比 Al 原子更明显。这表明氮化过程减少了 Sc 原子周围氮空位的数量。
{"title":"Effects of plasma oxidation and plasma nitridation on chemical bonding state of AlScN evaluated by AR-HAXPES","authors":"Tomoya Tsutsumi, Kazuki Goshima, Yoshiharu Kirihara, Tatsuki Okazaki, Akira Yasui, K. Kakushima, Yuichiro Mitani, H. Nohira","doi":"10.35848/1347-4065/ad3925","DOIUrl":"https://doi.org/10.35848/1347-4065/ad3925","url":null,"abstract":"\u0000 The effect of plasma treatment on AlScN films measured by angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) is investigated. I It was confirmed that oxygen plasma treatment of AlScN tends to increase the oxide component relative to the nitride component in the film. The increase in the on/off ratio of the current in the MIM capacitor was attributed to the decrease in the number of nitrogen vacancies in AlScN. The decrease in the on/off ratio after further plasma oxidation treatment is due to the change from nitride to oxide film material on the surface side. It was also confirmed that the nitriding pretreatment for 1 min makes AlScN less susceptible to oxidation. Furthermore, the inhibition of oxidation was more pronounced for Sc atoms than for Al atoms. This suggests that the nitridation process reduced the number of nitrogen vacancies around Sc atoms.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"58 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140368011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-29DOI: 10.35848/1347-4065/ad3926
Bo Li, Shenghong Ye, M. Che, Haolan Tang, Naoto Masutomi, Yuya Mikami, Kazutoshi Kato
We explored the potential of an optoelectronic frequency hopping system within the 300 GHz band, leveraging a tunable distributed feedback (DFB) laser array and uni-traveling carrier photodiode (UTC-PD). Our experiments successfully achieved a 10-channel terahertz (THz) frequency hopping, marking a significant advancement in THz secure communication technologies. Notably, the system exhibited a rapid frequency-hopping capability with a short transition time of 0.8 ms between channels, ranging from 288 GHz to 331 GHz. Further, we conducted data transmission tests at a rate of 5 Gbit/s across several channels. The results were promising, showing each channel maintained a clear eye pattern and a low bit error rate, crucial factors for reliable and secure data transmission. These findings not only demonstrate the efficacy of our system but also open new avenues for high-speed, secure THz communication.
{"title":"Demonstration of THz frequency hopping in the 300 GHz band based on UTC-PD and tunable DFB laser array","authors":"Bo Li, Shenghong Ye, M. Che, Haolan Tang, Naoto Masutomi, Yuya Mikami, Kazutoshi Kato","doi":"10.35848/1347-4065/ad3926","DOIUrl":"https://doi.org/10.35848/1347-4065/ad3926","url":null,"abstract":"\u0000 We explored the potential of an optoelectronic frequency hopping system within the 300 GHz band, leveraging a tunable distributed feedback (DFB) laser array and uni-traveling carrier photodiode (UTC-PD). Our experiments successfully achieved a 10-channel terahertz (THz) frequency hopping, marking a significant advancement in THz secure communication technologies. Notably, the system exhibited a rapid frequency-hopping capability with a short transition time of 0.8 ms between channels, ranging from 288 GHz to 331 GHz. Further, we conducted data transmission tests at a rate of 5 Gbit/s across several channels. The results were promising, showing each channel maintained a clear eye pattern and a low bit error rate, crucial factors for reliable and secure data transmission. These findings not only demonstrate the efficacy of our system but also open new avenues for high-speed, secure THz communication.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"63 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140365738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-28DOI: 10.35848/1347-4065/ad38f7
Y. Imai, K. Makihara, Yuji Yamamoto, Wei-Chen Wen, M. Schubert, Jongeun Baek, Ryoya Tsuji, Noriyuki Taoka, A. Ohta, Seiichi Miyazaki
Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as ~1011 cm-2 have been fabricated on ultrathin SiO2 by using a ~4.5 nm-thick poly-Si on insulator (SOI) substrate, and controlling low-pressure chemical-vapor-deposition (LPCVD) using monosilane (SiH4), and followed by thermal oxidation. By controlling the thermal oxidation processes of Si-QDs and the poly-Si layer, we have successfully demonstrated the vertical alignment of Si-QDs, where the Si-QDs are also used as a shadow mask of the underlying poly-Si layer. We also demonstrated in-plane alignment of the one-dimensionally self-aligned Si-QDs on line-patterned SiO2. In addition, from surface potential measurements by using atomic force microscopy (AFM)/Kelvin probe force microscopy (KFM), we confirmed that the initial surface potential change caused by valence electron extraction from the dots to the tip was stably maintained until ~120 min, implying the quantum confinement effect at discrete energy levels of the upper- and lower- QDs.
{"title":"Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties","authors":"Y. Imai, K. Makihara, Yuji Yamamoto, Wei-Chen Wen, M. Schubert, Jongeun Baek, Ryoya Tsuji, Noriyuki Taoka, A. Ohta, Seiichi Miyazaki","doi":"10.35848/1347-4065/ad38f7","DOIUrl":"https://doi.org/10.35848/1347-4065/ad38f7","url":null,"abstract":"\u0000 Self-aligned Si-quantum-dots (Si-QDs) with an areal density as high as ~1011 cm-2 have been fabricated on ultrathin SiO2 by using a ~4.5 nm-thick poly-Si on insulator (SOI) substrate, and controlling low-pressure chemical-vapor-deposition (LPCVD) using monosilane (SiH4), and followed by thermal oxidation. By controlling the thermal oxidation processes of Si-QDs and the poly-Si layer, we have successfully demonstrated the vertical alignment of Si-QDs, where the Si-QDs are also used as a shadow mask of the underlying poly-Si layer. We also demonstrated in-plane alignment of the one-dimensionally self-aligned Si-QDs on line-patterned SiO2. In addition, from surface potential measurements by using atomic force microscopy (AFM)/Kelvin probe force microscopy (KFM), we confirmed that the initial surface potential change caused by valence electron extraction from the dots to the tip was stably maintained until ~120 min, implying the quantum confinement effect at discrete energy levels of the upper- and lower- QDs.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"140 47","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140369093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, some hybrid inorganic-organic resist materials known as metal-oxo clusters were synthesized and their lithographic characteristics were investigated to clarify the difference in sensitivity and resolution among Ti-based, Zr-based and Hf-based oxo clusters by using EUV and EB exposure. Our results indicated that the sensitivity in Hf-based oxo clusters was higher than those of Ti-based and Zr-based oxo clusters in both EB and EUV exposure. Although the exposure dose was not optimized, the patterns of Ti-based, Zr-based, and Hf-based oxo clusters showed a 100, 50, and 32 nm line and space patterns at the dose of 250, 80, and 25 C/cm2, respectively. We clarified that it is very important for the new resist design such as hybrid inorganic-organic resist to increase photo-absorption cross section and density of elements. In particular, the size and homogeneity of particle and film quality is very important for resist performance of hybrid inorganic-organic resist materials. In addition, it is clarified that etch durability increased by annealing metal oxo clusters
{"title":"Study on resist performance of inorganic-organic resist materials for EUV and EB lithography","authors":"Hiroki Yamamoto, Yuko Tsutsui Ito, K. Okamoto, Shuhei Shimoda, Takahiro Kozawa","doi":"10.35848/1347-4065/ad38c5","DOIUrl":"https://doi.org/10.35848/1347-4065/ad38c5","url":null,"abstract":"\u0000 In this study, some hybrid inorganic-organic resist materials known as metal-oxo clusters were synthesized and their lithographic characteristics were investigated to clarify the difference in sensitivity and resolution among Ti-based, Zr-based and Hf-based oxo clusters by using EUV and EB exposure. Our results indicated that the sensitivity in Hf-based oxo clusters was higher than those of Ti-based and Zr-based oxo clusters in both EB and EUV exposure. Although the exposure dose was not optimized, the patterns of Ti-based, Zr-based, and Hf-based oxo clusters showed a 100, 50, and 32 nm line and space patterns at the dose of 250, 80, and 25 C/cm2, respectively. We clarified that it is very important for the new resist design such as hybrid inorganic-organic resist to increase photo-absorption cross section and density of elements. In particular, the size and homogeneity of particle and film quality is very important for resist performance of hybrid inorganic-organic resist materials. In addition, it is clarified that etch durability increased by annealing metal oxo clusters","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"129 29","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140369606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-28DOI: 10.35848/1347-4065/ad38c9
Mitsuyasu Deguchi, Y. Kida, Yoshitaka Watanabe, Takuya Shimura
In underwater acoustic communication, inaccurate synchronization can cause an incorrect estimation of the uniform Doppler shift, thereby degrading demodulation performance. In this paper, the effect of inaccurate synchronization on demodulation is mathematically described, theoretically demonstrating that adaptive down-conversion, which has been proposed to suppress the effects of nonuniform Doppler shift, reduces the degradation of demodulation performance caused by inaccurate synchronization. The improvement in demodulation performance by adaptive down-conversion was evaluated using experimental data. The demodulation results including the intended synchronization errors clearly show that adaptive down-conversion reduces the effects of the synchronization errors and improves demodulation performance in cases with inaccurate synchronization.
{"title":"Suppression of effects of the synchronization error with adaptive down-conversion for underwater acoustic communication","authors":"Mitsuyasu Deguchi, Y. Kida, Yoshitaka Watanabe, Takuya Shimura","doi":"10.35848/1347-4065/ad38c9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad38c9","url":null,"abstract":"\u0000 In underwater acoustic communication, inaccurate synchronization can cause an incorrect estimation of the uniform Doppler shift, thereby degrading demodulation performance. In this paper, the effect of inaccurate synchronization on demodulation is mathematically described, theoretically demonstrating that adaptive down-conversion, which has been proposed to suppress the effects of nonuniform Doppler shift, reduces the degradation of demodulation performance caused by inaccurate synchronization. The improvement in demodulation performance by adaptive down-conversion was evaluated using experimental data. The demodulation results including the intended synchronization errors clearly show that adaptive down-conversion reduces the effects of the synchronization errors and improves demodulation performance in cases with inaccurate synchronization.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"88 16","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140371147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-28DOI: 10.35848/1347-4065/ad38c7
V. Philipsen, A. Frommhold, D. Thakare, Guillaume Libeert, Inhwan Lee, J. Franke, Joost Bekaert, L. van Look, Nick Pellens, P. de Bisschop, Rik Jonckheere, T. Kovalevich, Vincent Wiaux, Eric Hendrickx
We are on the eve of the next big step in lithography technology with the introduction of High numerical aperture EUV. The change from NA 0.33 to 0.55 in EUV lithography is an increase of 67%, which is the largest jump in the last decades, and puts tight requirements on focus and edge placement. Moreover, the lithography system has changed from fully isomorphic, i.e., same demagnification in all directions, to an anamorphic system, i.e., the demagnification in scan direction has doubled with respect to the slit direction. At imec we are fostering the ecosystem surrounding the lithography tool. In this paper we focus on the imaging and mask innovations supporting the EUV ecosystem, which are categorized into four areas: novel absorber masks, stitching, mask variability, and innovative imaging solutions. The current drivers of IC manufacturers implementing (High NA) EUVL are reduction of the EUV exposure dose and decrease in wafer stochastics. We discuss how these four areas have the potential to deliver in EUVL an increase in productivity, an improvement in the process window and a reduction in stochasticity at wafer level.
{"title":"Mask innovations on the eve of High NA EUV lithography","authors":"V. Philipsen, A. Frommhold, D. Thakare, Guillaume Libeert, Inhwan Lee, J. Franke, Joost Bekaert, L. van Look, Nick Pellens, P. de Bisschop, Rik Jonckheere, T. Kovalevich, Vincent Wiaux, Eric Hendrickx","doi":"10.35848/1347-4065/ad38c7","DOIUrl":"https://doi.org/10.35848/1347-4065/ad38c7","url":null,"abstract":"\u0000 We are on the eve of the next big step in lithography technology with the introduction of High numerical aperture EUV. The change from NA 0.33 to 0.55 in EUV lithography is an increase of 67%, which is the largest jump in the last decades, and puts tight requirements on focus and edge placement. Moreover, the lithography system has changed from fully isomorphic, i.e., same demagnification in all directions, to an anamorphic system, i.e., the demagnification in scan direction has doubled with respect to the slit direction. At imec we are fostering the ecosystem surrounding the lithography tool. In this paper we focus on the imaging and mask innovations supporting the EUV ecosystem, which are categorized into four areas: novel absorber masks, stitching, mask variability, and innovative imaging solutions. The current drivers of IC manufacturers implementing (High NA) EUVL are reduction of the EUV exposure dose and decrease in wafer stochastics. We discuss how these four areas have the potential to deliver in EUVL an increase in productivity, an improvement in the process window and a reduction in stochasticity at wafer level.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"16 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140373269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-28DOI: 10.35848/1347-4065/ad38c8
Takayuki Hoshi, Yoshiki O-oka
The increasing use of airborne ultrasonic waves in daily life, driven by advances in parametric and phased arrays, has led to innovative applications like highly directional speakers, non-contact tactile feedback, 3D acoustic levitation, and medical therapies. These advancements necessitate accurate measurement of high-intensity ultrasonic waves, exceeding the capability of traditional microphones limited to around 160 dB , and highlight the growing importance of measuring the sound field not merely as scalar (sound pressure) but as vector (acoustic intensity) to accommodate future technological developments. This paper introduces an acoustic intensity microphone using optical fibers as probes to overcome these limitations. The proposed method replaces the two ordinary microphones used in the traditional acoustic intensity measurement method with thin optical fibers, minimizing sound field disturbance. Experimental validation and the structure of a practical acoustic intensity microphone are discussed, building upon foundational work presented at USE2023 with added verification and insights.
在参数阵列和相控阵列技术进步的推动下，空气传播超声波在日常生活中的应用日益广泛，并带来了各种创新应用，如高指向性扬声器、非接触式触觉反馈、三维声学悬浮和医疗。这些进步要求对高强度超声波进行精确测量，而传统传声器的测量能力仅限于 160 dB 左右，这就凸显了测量声场的重要性，不仅要测量标量（声压），还要测量矢量（声强），以适应未来的技术发展。本文介绍了一种使用光纤作为探头的声强传声器，以克服这些限制。所提出的方法用细光纤取代了传统声强测量方法中使用的两个普通传声器，最大限度地减少了声场干扰。实验验证和实用声强传声器的结构将在 USE2023 上介绍的基础工作的基础上进行讨论，并增加验证和见解。
{"title":"Optical fiber-based acoustic intensity microphone for high-intensity airborne ultrasound measurement","authors":"Takayuki Hoshi, Yoshiki O-oka","doi":"10.35848/1347-4065/ad38c8","DOIUrl":"https://doi.org/10.35848/1347-4065/ad38c8","url":null,"abstract":"\u0000 The increasing use of airborne ultrasonic waves in daily life, driven by advances in parametric and phased arrays, has led to innovative applications like highly directional speakers, non-contact tactile feedback, 3D acoustic levitation, and medical therapies. These advancements necessitate accurate measurement of high-intensity ultrasonic waves, exceeding the capability of traditional microphones limited to around 160 dB , and highlight the growing importance of measuring the sound field not merely as scalar (sound pressure) but as vector (acoustic intensity) to accommodate future technological developments. This paper introduces an acoustic intensity microphone using optical fibers as probes to overcome these limitations. The proposed method replaces the two ordinary microphones used in the traditional acoustic intensity measurement method with thin optical fibers, minimizing sound field disturbance. Experimental validation and the structure of a practical acoustic intensity microphone are discussed, building upon foundational work presented at USE2023 with added verification and insights.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"64 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140368856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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