Pub Date : 2024-06-04DOI: 10.35848/1347-4065/ad540a
Sumio Sugisaki, Ryo Ito, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura
The biological human brain-mimicking neuromorphic computing systems have drawn great attention recently. Synaptic elements of the neuromorphic computing systems are required to have high integration capability consumption , low power, and low cost. We have realized a memristor characteristic of a Ga-Al-O/Ga-Sn-O/Ga-Al-O stack device using mist-chemical vapor deposition (mist CVD). The mist CVD method is a thin film fabrication technology with a safe, simple equipment configuration, and low-cost environmental impact. It is achieved that hysteresis I-V curves of memristor characteristics were certainly obtained, and electric resistance for the high resistance state (HRS) and the low resistance state (LRS) were stably repeated at least 500 times. The results suggest a possibility that Ga-Sn-O thin films by mist CVD methods can be a key component of neuromorphic computing systems.
{"title":"Memristor characteristics of a Ga-Al-O/Ga-Sn-O/Ga-Al-O stack device fabricated using mist chemical vapor deposition","authors":"Sumio Sugisaki, Ryo Ito, T. Matsuda, Hidenori Kawanishi, Mutsumi Kimura","doi":"10.35848/1347-4065/ad540a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad540a","url":null,"abstract":"\u0000 The biological human brain-mimicking neuromorphic computing systems have drawn great attention recently. Synaptic elements of the neuromorphic computing systems are required to have high integration capability consumption , low power, and low cost. We have realized a memristor characteristic of a Ga-Al-O/Ga-Sn-O/Ga-Al-O stack device using mist-chemical vapor deposition (mist CVD). The mist CVD method is a thin film fabrication technology with a safe, simple equipment configuration, and low-cost environmental impact. It is achieved that hysteresis I-V curves of memristor characteristics were certainly obtained, and electric resistance for the high resistance state (HRS) and the low resistance state (LRS) were stably repeated at least 500 times. The results suggest a possibility that Ga-Sn-O thin films by mist CVD methods can be a key component of neuromorphic computing systems.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"11 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141266655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.35848/1347-4065/ad5425
K. Kawase, H. Zen, T. Sakai, Y. Hayakawa, H. Ohgaki, R. Hajima
The maximum energy of photons from high-harmonic generation (HHG) increases with the wavelength of the driving laser. A free electron laser (FEL) is a continuously tunable light source in the mid-infrared wavelength range and it is useful for investigating the extension of the accessible photon energy in HHG. Recently, the undulator magnets of the infrared FEL at the Laboratory for Electron Beam Research and Application (LEBRA), Nihon University, have been replaced, and then the output power of the FEL has increased. Here, we evaluate the pulse duration and focal beam size of the FEL and show that the LEBRA FEL with 2-μm and 3-μm laser wavelengths under a 44-MHz bunch repetition mode can drive HHG.
高次谐波发生（HHG）产生的光子的最大能量随驱动激光波长的增加而增加。自由电子激光器（FEL）是一种在中红外波长范围内可连续调谐的光源，对于研究高次谐波发生中可获得光子能量的扩展非常有用。最近，日本大学电子束研究与应用实验室（LEBRA）的红外 FEL 更换了减压器磁铁，从而提高了 FEL 的输出功率。在此，我们对 FEL 的脉冲持续时间和焦点光束大小进行了评估，结果表明 LEBRA FEL 在 44 MHz 波束重复模式下使用 2-μm 和 3-μm 激光波长可以驱动 HHG。
{"title":"Beam characterization of mid-infrared free electron laser to drive high-harmonic generation","authors":"K. Kawase, H. Zen, T. Sakai, Y. Hayakawa, H. Ohgaki, R. Hajima","doi":"10.35848/1347-4065/ad5425","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5425","url":null,"abstract":"\u0000 The maximum energy of photons from high-harmonic generation (HHG) increases with the wavelength of the driving laser. A free electron laser (FEL) is a continuously tunable light source in the mid-infrared wavelength range and it is useful for investigating the extension of the accessible photon energy in HHG. Recently, the undulator magnets of the infrared FEL at the Laboratory for Electron Beam Research and Application (LEBRA), Nihon University, have been replaced, and then the output power of the FEL has increased. Here, we evaluate the pulse duration and focal beam size of the FEL and show that the LEBRA FEL with 2-μm and 3-μm laser wavelengths under a 44-MHz bunch repetition mode can drive HHG.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"6 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141266787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.35848/1347-4065/ad53b0
M. Otaka, Hiroshi Otomo, Kizuku Ikeda, Jian-Syun Lai, Daichi Wakita, K. Kamataki, K. Koga, M. Shiratani, Daiki Nagamatsu, Takahiro Shindo, Tatsuo Matsudo
We investigated effects of tailored voltage waveform (TVWs) discharges on deposition of hydrogenated amorphous carbon (a-C:H) films in CH4/Ar capacitively coupled plasma. TVWs discharges employ two driving radio frequencies (13.56 MHz and 27.12 MHz) and control their phase shift to independently regulate ion bombardment energy (IBE) and ion flux. In this study, a-C:H films were deposited by changing DC-self bias with phase shift and constant applied voltage peak-to-peak. Additionally, we investigated phase resolved optical emission spectroscopy (PROES) for plasma characterization. As a result, plasma enhanced chemical vapor deposition (PECVD) for a-C:H films using TVWs discharges realize control of film properties such as mass density, sp3 fraction and H content, with keeping deposition rate constant. Thus, it is suggested that TVWs discharges realize the independent control of IBE and ion flux with high accuracy, highlighting its utility in a-C:H film depositions.
{"title":"Deposition of hydrogenated amorphous carbon films by CH4/Ar capacitively coupled plasma using tailored voltage waveform discharges","authors":"M. Otaka, Hiroshi Otomo, Kizuku Ikeda, Jian-Syun Lai, Daichi Wakita, K. Kamataki, K. Koga, M. Shiratani, Daiki Nagamatsu, Takahiro Shindo, Tatsuo Matsudo","doi":"10.35848/1347-4065/ad53b0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad53b0","url":null,"abstract":"\u0000 We investigated effects of tailored voltage waveform (TVWs) discharges on deposition of hydrogenated amorphous carbon (a-C:H) films in CH4/Ar capacitively coupled plasma. TVWs discharges employ two driving radio frequencies (13.56 MHz and 27.12 MHz) and control their phase shift to independently regulate ion bombardment energy (IBE) and ion flux. In this study, a-C:H films were deposited by changing DC-self bias with phase shift and constant applied voltage peak-to-peak. Additionally, we investigated phase resolved optical emission spectroscopy (PROES) for plasma characterization. As a result, plasma enhanced chemical vapor deposition (PECVD) for a-C:H films using TVWs discharges realize control of film properties such as mass density, sp3 fraction and H content, with keeping deposition rate constant. Thus, it is suggested that TVWs discharges realize the independent control of IBE and ion flux with high accuracy, highlighting its utility in a-C:H film depositions.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"18 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141271366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.35848/1347-4065/ad5355
Nobuyuki Kuboi
Dry etching and deposition of Si and Si dielectric films are critical processes for achieving of high performance in advanced complementary metal-oxide-semiconductor (CMOS) devices. To accurately predict and control fluctuations in these process properties during mass production, it is essential that dry process simulation technology considers various factors. These include fluctuations in plasma-chamber wall interaction, effects of by-products on critical dimensions, Si recess dependence on wafer open area ratios and local pattern structures, the time-dependent distribution of plasma-induced damage associated with feature-scale profiles, and film properties such as density, permeability, and adhesion. Addressing these considerations can overcome issues with conventional simulations that lack the accuracy required for mass production. This paper reviews these advanced simulation technologies and discusses the perspective of fusion physical models with machine learning, incorporating real-time monitoring in manufacturing equipment, known as process informatics. This approach is anticipated to usher in the era of full digital twins.
{"title":"Review and perspective of dry etching and deposition process modeling of Si and Si dielectric films for advanced CMOS device applications","authors":"Nobuyuki Kuboi","doi":"10.35848/1347-4065/ad5355","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5355","url":null,"abstract":"\u0000 Dry etching and deposition of Si and Si dielectric films are critical processes for achieving of high performance in advanced complementary metal-oxide-semiconductor (CMOS) devices. To accurately predict and control fluctuations in these process properties during mass production, it is essential that dry process simulation technology considers various factors. These include fluctuations in plasma-chamber wall interaction, effects of by-products on critical dimensions, Si recess dependence on wafer open area ratios and local pattern structures, the time-dependent distribution of plasma-induced damage associated with feature-scale profiles, and film properties such as density, permeability, and adhesion. Addressing these considerations can overcome issues with conventional simulations that lack the accuracy required for mass production. This paper reviews these advanced simulation technologies and discusses the perspective of fusion physical models with machine learning, incorporating real-time monitoring in manufacturing equipment, known as process informatics. This approach is anticipated to usher in the era of full digital twins.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"30 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141268979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.35848/1347-4065/ad442e
Hiroki Matsuo, Yuji Noguchi
The bulk photovoltaic (PV) effect in ferroelectric materials has attracted worldwide attention for novel optoelectronic applications utilizing above-bandgap photovoltages, light-polarization-dependent photocurrents, photocurrent generation by terahertz light, etc. One of the drawbacks is its weak photoresponse under visible-light irradiation, and thereby the development of visible-light-active ferroelectrics has been an important issue. In this review, firstly, we introduce the history, mechanisms, and physical features of the bulk PV effect. Secondly, we summarize the properties of representative ferroelectric oxides and two-dimensional nanomaterials. Moreover, we describe a material design for enhancing the visible-light photoresponse based on bandgap tuning and gap-state engineering. Finally, we discuss future prospects of ferroelectric PV devices with a high conversion efficiency.
{"title":"Bulk photovoltaic effect in ferroelectrics","authors":"Hiroki Matsuo, Yuji Noguchi","doi":"10.35848/1347-4065/ad442e","DOIUrl":"https://doi.org/10.35848/1347-4065/ad442e","url":null,"abstract":"The bulk photovoltaic (PV) effect in ferroelectric materials has attracted worldwide attention for novel optoelectronic applications utilizing above-bandgap photovoltages, light-polarization-dependent photocurrents, photocurrent generation by terahertz light, etc. One of the drawbacks is its weak photoresponse under visible-light irradiation, and thereby the development of visible-light-active ferroelectrics has been an important issue. In this review, firstly, we introduce the history, mechanisms, and physical features of the bulk PV effect. Secondly, we summarize the properties of representative ferroelectric oxides and two-dimensional nanomaterials. Moreover, we describe a material design for enhancing the visible-light photoresponse based on bandgap tuning and gap-state engineering. Finally, we discuss future prospects of ferroelectric PV devices with a high conversion efficiency.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"102 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141389132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.35848/1347-4065/ad42a4
M. Kageshima
Variation in shear viscous drag in a near-critical binary mixture was measured between a hydrophilic probe sphere and a hydrophilic substrate down to a distance range comparable to or smaller than the correlation length ξ using a magnetic excitation method of atomic force microscopy at temperatures T=Tc−∆T with ∆T varying from 0.1 to 0.7 K. As the temperature approached the Tc, the increase in the drag coefficient toward the zero distance was observed to be less pronounced in the distance range below ca. 100 nm. The data was discussed as arising from suppression in a concentration gradient in the intersurface region due to the overlap of the affected layers on similar surfaces.
在温度 T=Tc-∆T （∆T 在 0.1 至 0.7 K 之间变化）条件下，使用原子力显微镜的磁激励方法测量了亲水探针球和亲水基底之间的剪切粘性阻力变化，其距离范围小于或等于相关长度 ξ。这些数据被认为是由于类似表面上受影响层的重叠导致表面间区域的浓度梯度受到抑制而产生的。
{"title":"Shear viscosity of a near-critical binary system analyzed with variable-temperature atomic force microscopy","authors":"M. Kageshima","doi":"10.35848/1347-4065/ad42a4","DOIUrl":"https://doi.org/10.35848/1347-4065/ad42a4","url":null,"abstract":"Variation in shear viscous drag in a near-critical binary mixture was measured between a hydrophilic probe sphere and a hydrophilic substrate down to a distance range comparable to or smaller than the correlation length ξ using a magnetic excitation method of atomic force microscopy at temperatures T=Tc−∆T with ∆T varying from 0.1 to 0.7 K. As the temperature approached the Tc, the increase in the drag coefficient toward the zero distance was observed to be less pronounced in the distance range below ca. 100 nm. The data was discussed as arising from suppression in a concentration gradient in the intersurface region due to the overlap of the affected layers on similar surfaces.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141388830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.35848/1347-4065/ad531d
Takumi Sato, Takuma Otani, Shogo Nakamori, F. Utsuno, Tsuyoshi Honma, T. Yamashita
We conduct first-principles calculations to investigate the phase stability of the pseudo-binary Li4x Mg2(1−x)P2O7 system, a promising solid electrolyte material. Our approach involves exploring stable structures through crystal structure prediction simulations and the generation of structures by cation substitution. We then discuss the phase stability of four P2O7 frameworks. For the composition of Li2MgP2O7, we find that the structure with the same P2O7 framework as Li2.2Zn0.8P2O7 exhibits the lowest formation energy. Our results agree well with the experimental results and provide insights into material design within the Li-Mg-P-O quaternary system for next-generation battery technology.
{"title":"Crystal structure prediction of Li4x\u0000 Mg2(1-x)P2O7 by first-principles calculations","authors":"Takumi Sato, Takuma Otani, Shogo Nakamori, F. Utsuno, Tsuyoshi Honma, T. Yamashita","doi":"10.35848/1347-4065/ad531d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad531d","url":null,"abstract":"\u0000 We conduct first-principles calculations to investigate the phase stability of the pseudo-binary Li4x\u0000 Mg2(1−x)P2O7 system, a promising solid electrolyte material. Our approach involves exploring stable structures through crystal structure prediction simulations and the generation of structures by cation substitution. We then discuss the phase stability of four P2O7 frameworks. For the composition of Li2MgP2O7, we find that the structure with the same P2O7 framework as Li2.2Zn0.8P2O7 exhibits the lowest formation energy. Our results agree well with the experimental results and provide insights into material design within the Li-Mg-P-O quaternary system for next-generation battery technology.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"50 34","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141269704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.35848/1347-4065/ad53b2
Gaku Takagi, T. Murai, Yuya Shoji
Photonic accelerators are anticipated to be the next generation of hardware processors, replacing traditional electronic accelerators. In current photonic accelerators based on artificial neural networks, photonic integrated circuits are incorporated with electronic integrated circuits to leverage their strengths: photonic circuits are used to perform linear calculations, while electronic circuits are used to perform nonlinear calculations. However, this architecture requires optoelectric conversion at each layer and is unable to leverage the superiority of light. We propose a novel photonic spiking neuron with a magneto-optical synapse and an all-optical spiking neural network. This study experimentally demonstrates that the magnetization reversal of CoFeB, which occurs during thermal accumulation owing to multiple optical pulses, is similar to the behavior of the leaky integrated and fire model of spiking neurons.
{"title":"Magnetization reversal by multiple optical pulses for photonic spiking neuron with the leaky integrate and fire model","authors":"Gaku Takagi, T. Murai, Yuya Shoji","doi":"10.35848/1347-4065/ad53b2","DOIUrl":"https://doi.org/10.35848/1347-4065/ad53b2","url":null,"abstract":"\u0000 Photonic accelerators are anticipated to be the next generation of hardware processors, replacing traditional electronic accelerators. In current photonic accelerators based on artificial neural networks, photonic integrated circuits are incorporated with electronic integrated circuits to leverage their strengths: photonic circuits are used to perform linear calculations, while electronic circuits are used to perform nonlinear calculations. However, this architecture requires optoelectric conversion at each layer and is unable to leverage the superiority of light. We propose a novel photonic spiking neuron with a magneto-optical synapse and an all-optical spiking neural network. This study experimentally demonstrates that the magnetization reversal of CoFeB, which occurs during thermal accumulation owing to multiple optical pulses, is similar to the behavior of the leaky integrated and fire model of spiking neurons.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141272353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High aspect ratio SiO2/SiN (ON) stacked layer etching using hydrofluorocarbon gases was conducted with various ratios of H, F, and C to achieve higher etching rates and precise profile control. The experimental gases were C3HF5, C4HF5, C4H2F4, C4H2F6, C4H4F6 and C5H2F10. The oxygen gas flow rate and mixing ratio were optimized to maximize mask selectivity while avoiding clogging at the top of the mask. For comparison, C4F6/CH2F2/Ar/O2, and C4F6/C4F8/CH2F2/Ar/O2 were used as reference gas mixtures. The initial screening narrowed the candidate pool to 3 gases: C3HF5, C4H2F6, and C4H4F6. At equivalent power, the C3HF5 condition achieved a 15% faster ON etch rate, and C4H2F6 achieved a 9% faster ON etch rate compared to the reference condition. Only C4H4F6 showed a worse ON etch rate than the reference (~33%) due to severe mask clogging. Furthermore, C3HF5 achieved a 29% faster ON etch rate under high power conditions. It also achieved a 57% faster ON etch rate without excessively compromising selectivity or bow CD expansion after optimization. We report detailed comparisons of etch rate and clogging while controlling the CD profile in the ON stack process.
{"title":"High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6","authors":"Chihiro Abe, Toshiyuki Sasaki, Yusuke Kondo, Seiya Yoshinaga, Shuichi Kuboi, Yoshinao Takahashi, Korehito Kato, Hisashi Shimizu, Hiroyuki Fukumizu, M. Omura","doi":"10.35848/1347-4065/ad4f95","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4f95","url":null,"abstract":"\u0000 High aspect ratio SiO2/SiN (ON) stacked layer etching using hydrofluorocarbon gases was conducted with various ratios of H, F, and C to achieve higher etching rates and precise profile control. The experimental gases were C3HF5, C4HF5, C4H2F4, C4H2F6, C4H4F6 and C5H2F10. The oxygen gas flow rate and mixing ratio were optimized to maximize mask selectivity while avoiding clogging at the top of the mask. For comparison, C4F6/CH2F2/Ar/O2, and C4F6/C4F8/CH2F2/Ar/O2 were used as reference gas mixtures. The initial screening narrowed the candidate pool to 3 gases: C3HF5, C4H2F6, and C4H4F6. At equivalent power, the C3HF5 condition achieved a 15% faster ON etch rate, and C4H2F6 achieved a 9% faster ON etch rate compared to the reference condition. Only C4H4F6 showed a worse ON etch rate than the reference (~33%) due to severe mask clogging. Furthermore, C3HF5 achieved a 29% faster ON etch rate under high power conditions. It also achieved a 57% faster ON etch rate without excessively compromising selectivity or bow CD expansion after optimization. We report detailed comparisons of etch rate and clogging while controlling the CD profile in the ON stack process.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"5 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141105437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-22DOI: 10.35848/1347-4065/ad4f3a
Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto
Depth profiles of deep levels in the tail region of Al ion implantation in n-type 4H-SiC were investigated by deep level transient spectroscopy measurements. Deep levels energetically located at Ec – 0.55 eV, Ec – 0.64 eV, and Ec – 1.50 eV (Ec : conduction band bottom) are generated in the tail region by the implantation and subsequent activation annealing at 1750oC for 20 min. The densities of these defects were approximately 20–40 times lower than the implanted Al atom density, and the densities of these defects and Al atoms exhibited an exponential decay along the depth direction with a decay length of 140–190 nm. Another deep level located at Ec – 1.30 eV was detected in the tail region and the density of this trap decreased more rapidly with a decay length of 62 nm. The origins of the observed deep levels are discussed based on several experimental results.
{"title":"Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC","authors":"Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto","doi":"10.35848/1347-4065/ad4f3a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad4f3a","url":null,"abstract":"\u0000 Depth profiles of deep levels in the tail region of Al ion implantation in n-type 4H-SiC were investigated by deep level transient spectroscopy measurements. Deep levels energetically located at Ec – 0.55 eV, Ec – 0.64 eV, and Ec – 1.50 eV (Ec : conduction band bottom) are generated in the tail region by the implantation and subsequent activation annealing at 1750oC for 20 min. The densities of these defects were approximately 20–40 times lower than the implanted Al atom density, and the densities of these defects and Al atoms exhibited an exponential decay along the depth direction with a decay length of 140–190 nm. Another deep level located at Ec – 1.30 eV was detected in the tail region and the density of this trap decreased more rapidly with a decay length of 62 nm. The origins of the observed deep levels are discussed based on several experimental results.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"56 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141110623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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