Pub Date : 2024-07-09DOI: 10.35848/1347-4065/ad60d0
Daisuke Hirai, Tomoki Murata, Sakyo Hirose
We conducted high-throughput screening of ferroelectrics using first-principles calculations based on an existing crystal structure database. We focused on nonpolar structures with polar instability, to efficiently screen materials for their potential to undergo ferroelectric phase transitions from oxide materials in crystal structure databases. Our screening criteria included computational feasibility (excluding partial occupation), the absence of hazardous elements, and a maximum of 250 atoms in the conventional cell. Through this screening, we identified 47 ferroelectric candidates, 8 of which have already been reported as ferroelectrics. To validate our screening approach, we synthesized and evaluated several candidate materials with Dion-Jacobson-type structures and measured their dielectric and ferroelectric properties. Although the ferroelectric behavior was not initially identified in these materials, our experiments confirmed their properties. Finally, we discovered a new ferroelectric material, CsCa2Nb3O10, which exhibited a ferroelectric phase transition at 28 K, clearly demonstrating the effectiveness of our screening strategy.
{"title":"Accelerating ferroelectric materials discovery through high-throughput first-principles screening and experimental validation","authors":"Daisuke Hirai, Tomoki Murata, Sakyo Hirose","doi":"10.35848/1347-4065/ad60d0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad60d0","url":null,"abstract":"\u0000 We conducted high-throughput screening of ferroelectrics using first-principles calculations based on an existing crystal structure database. We focused on nonpolar structures with polar instability, to efficiently screen materials for their potential to undergo ferroelectric phase transitions from oxide materials in crystal structure databases. Our screening criteria included computational feasibility (excluding partial occupation), the absence of hazardous elements, and a maximum of 250 atoms in the conventional cell. Through this screening, we identified 47 ferroelectric candidates, 8 of which have already been reported as ferroelectrics. To validate our screening approach, we synthesized and evaluated several candidate materials with Dion-Jacobson-type structures and measured their dielectric and ferroelectric properties. Although the ferroelectric behavior was not initially identified in these materials, our experiments confirmed their properties. Finally, we discovered a new ferroelectric material, CsCa2Nb3O10, which exhibited a ferroelectric phase transition at 28 K, clearly demonstrating the effectiveness of our screening strategy.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"42 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141663594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The peculiar events called the “jumping and dropping” phenomena of piezoelectric ceramic vibrators in high amplitude operation have widely been known. The phenomena, which occur solely in the vicinity of the mechanical resonance frequencies of the vibrators, are the emergence of hysteresis in frequency domain with abrupt increase and decrease of the vibratory amplitude. It has long been believed that the nonlinearity of the piezoelectric materials is the dominant cause of the unstable vibratory behaviors. Nevertheless, the authors have found that they can be attributed to the local piezoelectric polarization reversals due to the electric field concentration caused by its conspicuous distortion inside the vibrators in mechanical resonance. This hypothesis has been examined by numerical and experimental investigations for hard-type piezoelectric ceramic disks vibrating in axisymmetric radially pulsating mode.
{"title":"Elucidation of the “jumping and dropping” phenomena of piezoelectric vibrators in high-amplitude operation in the vicinity of their mechanical resonance frequencies","authors":"Kazunari Adachi, Yasuhiro Yamayoshi, Takuya Ebihara, Yuya Kawanabe","doi":"10.35848/1347-4065/ad610d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad610d","url":null,"abstract":"\u0000 The peculiar events called the “jumping and dropping” phenomena of piezoelectric ceramic vibrators in high amplitude operation have widely been known. The phenomena, which occur solely in the vicinity of the mechanical resonance frequencies of the vibrators, are the emergence of hysteresis in frequency domain with abrupt increase and decrease of the vibratory amplitude. It has long been believed that the nonlinearity of the piezoelectric materials is the dominant cause of the unstable vibratory behaviors. Nevertheless, the authors have found that they can be attributed to the local piezoelectric polarization reversals due to the electric field concentration caused by its conspicuous distortion inside the vibrators in mechanical resonance. This hypothesis has been examined by numerical and experimental investigations for hard-type piezoelectric ceramic disks vibrating in axisymmetric radially pulsating mode.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141664215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.35848/1347-4065/ad606e
manqiang Du, zhenfeng Ding, Liangwen Qi, Xiaodong Wen, Bin Sun
In atmospheric pressure radio-frequency discharges, positive and negative feedback regions are defined based on the influence of varying the capacitance of the series capacitor in an inverted L-type impedance matching network on the fed RF power at the input port of the impedance matching network. The impact of the impedance matching network on the α-γ mode transition was investigated by adjusting the tuning series capacitor in the impedance matching network. The critical RF power as well as current and voltage at the α-γ mode transition is almost independent off the impedance matching network, while the counterpart immediately after the α-γ mode transition varies remarkably. The underlying mechanism is understood in terms of different feedbacks. Positive and negative feedbacks respectively promote and suppress the increment in RF power during the α-γ mode transition.
在大气压射频放电中，正反馈区和负反馈区是根据倒 L 型阻抗匹配网络中串联电容器的电容变化对阻抗匹配网络输入端口馈入射频功率的影响而定义的。通过调整阻抗匹配网络中的调谐串联电容器，研究了阻抗匹配网络对 α-γ 模式转换的影响。α-γ模式转换时的临界射频功率以及电流和电压几乎不受阻抗匹配网络的影响，而紧随α-γ模式转换之后的临界射频功率以及电流和电压则变化很大。我们可以从不同的反馈来理解其基本机制。在 α-γ 模式转换期间，正反馈分别促进和抑制射频功率的增加。
{"title":"Effects of impedance matching network on α–γ mode transition in atmospheric pressure RF discharges","authors":"manqiang Du, zhenfeng Ding, Liangwen Qi, Xiaodong Wen, Bin Sun","doi":"10.35848/1347-4065/ad606e","DOIUrl":"https://doi.org/10.35848/1347-4065/ad606e","url":null,"abstract":"\u0000 In atmospheric pressure radio-frequency discharges, positive and negative feedback regions are defined based on the influence of varying the capacitance of the series capacitor in an inverted L-type impedance matching network on the fed RF power at the input port of the impedance matching network. The impact of the impedance matching network on the α-γ mode transition was investigated by adjusting the tuning series capacitor in the impedance matching network. The critical RF power as well as current and voltage at the α-γ mode transition is almost independent off the impedance matching network, while the counterpart immediately after the α-γ mode transition varies remarkably. The underlying mechanism is understood in terms of different feedbacks. Positive and negative feedbacks respectively promote and suppress the increment in RF power during the α-γ mode transition.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" October","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141669683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.35848/1347-4065/ad606d
Yuika Kobayashi, H. Asai, S. Iizuka, J. Hattori, T. Ikegami, Koichi Fukuda, T. Nikuni, T. Mori
The study aimed to investigate the transfer characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) at cryogenic temperatures to elucidate the experimental conditions affecting the accurate estimation of the drain-induced barrier lowering (DIBL) parameter. Our device simulation revealed that MOSFETs featuring an underlap between the gate and source/drain edges experience a significant shift in threshold voltage (V t) in the low drain voltage (V d) region, which causes the misestimation of the DIBL parameter. This V t change is due to a notable increase in carrier concentration within the underlap region. To mitigate misestimation, confirming the dependence of the DIBL parameter on the linear region of V d serves as an effective method to ensure accurate estimation.
这项研究旨在调查金属氧化物半导体场效应晶体管（MOSFET）在低温下的传输特性，以阐明影响漏极诱导势垒降低（DIBL）参数准确估算的实验条件。我们的器件仿真显示，栅极和源极/漏极边缘之间存在欠间隙的 MOSFET 在低漏极电压 (V d) 区域的阈值电压 (V t) 会发生显著变化，从而导致 DIBL 参数的错误估计。这种 V t 变化是由于迭底区内的载流子浓度显著增加所致。为了减少误估，确认 DIBL 参数对 V d 线性区域的依赖性是确保准确估算的有效方法。
{"title":"TCAD analysis of conditions for DIBL parameter misestimation in cryogenic MOSFETs","authors":"Yuika Kobayashi, H. Asai, S. Iizuka, J. Hattori, T. Ikegami, Koichi Fukuda, T. Nikuni, T. Mori","doi":"10.35848/1347-4065/ad606d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad606d","url":null,"abstract":"\u0000 The study aimed to investigate the transfer characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) at cryogenic temperatures to elucidate the experimental conditions affecting the accurate estimation of the drain-induced barrier lowering (DIBL) parameter. Our device simulation revealed that MOSFETs featuring an underlap between the gate and source/drain edges experience a significant shift in threshold voltage (V\u0000 t) in the low drain voltage (V\u0000 d) region, which causes the misestimation of the DIBL parameter. This V\u0000 t change is due to a notable increase in carrier concentration within the underlap region. To mitigate misestimation, confirming the dependence of the DIBL parameter on the linear region of V\u0000 d serves as an effective method to ensure accurate estimation.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"117 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141667550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.35848/1347-4065/ad606c
Saif A. Al Graiti, M. Maafa, Son Kim Pham, Drew Maywar
We demonstrate and elucidate the local selectable inversion of the hysteresis shape of a bistable optical signal after fan-out. This selectability is based on a hysteresis-shape transformation that yields a switching contrast over 20 dB in magnitude for both the inversion clockwise (CW) and the non-inversion counterclockwise (CCW) hysteresis shapes, while maintaining input-switching powers. This behavior leverages an initial signal whose bistability is manifested by its state of polarization; a generalized Malus' law elucidates how selection is possible by controlling the transmittivity hysteresis through each local polarizer. The concept is demonstrated using a Fabry-Perot semiconductor optical amplifier to produce the initial bistable polarization-rotating signal, followed by a 1X2 fan-out and the realization of all four hysteresis shapes at each location, independent of the other location. This fan-out and selectable inversion behavior is applicable to other nonlinear photonic systems and provides new functionality for parallel optical processing.
{"title":"Photonic fan-out and local selectable inversion of the optical hysteresis shape","authors":"Saif A. Al Graiti, M. Maafa, Son Kim Pham, Drew Maywar","doi":"10.35848/1347-4065/ad606c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad606c","url":null,"abstract":"\u0000 We demonstrate and elucidate the local selectable inversion of the hysteresis shape of a bistable optical signal after fan-out. This selectability is based on a hysteresis-shape transformation that yields a switching contrast over 20 dB in magnitude for both the inversion clockwise (CW) and the non-inversion counterclockwise (CCW) hysteresis shapes, while maintaining input-switching powers. This behavior leverages an initial signal whose bistability is manifested by its state of polarization; a generalized Malus' law elucidates how selection is possible by controlling the transmittivity hysteresis through each local polarizer. The concept is demonstrated using a Fabry-Perot semiconductor optical amplifier to produce the initial bistable polarization-rotating signal, followed by a 1X2 fan-out and the realization of all four hysteresis shapes at each location, independent of the other location. This fan-out and selectable inversion behavior is applicable to other nonlinear photonic systems and provides new functionality for parallel optical processing.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141668576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.35848/1347-4065/ad5fd5
Moataz Eissa, Ryuya Sasaki, Tsuyoshi Horikawa, T. Amemiya, Nobuhiko Nishiyama
This study presents an efficient testing process for characterizing silicon photonic integrated circuits. This process utilizes a coupling structure that integrates grating couplers and spot-size converters for efficient testing both at the chip and wafer levels, respectively. By leveraging wafer-level testing to estimate the characteristics of final chip-level devices, we anticipate a reduction in testing costs. To demonstrate the validity of the proposed testing process, we fabricated and measured silicon-on-insulator ring resonator devices on both wafer and chip levels. The results showed good agreement between the two levels of measurement, validating the effectiveness of our proposed testing process.
{"title":"Wafer and chip-level characterization of edge-coupled photonic integrated circuits by cascaded grating couplers and spot-size converters","authors":"Moataz Eissa, Ryuya Sasaki, Tsuyoshi Horikawa, T. Amemiya, Nobuhiko Nishiyama","doi":"10.35848/1347-4065/ad5fd5","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5fd5","url":null,"abstract":"\u0000 This study presents an efficient testing process for characterizing silicon photonic integrated circuits. This process utilizes a coupling structure that integrates grating couplers and spot-size converters for efficient testing both at the chip and wafer levels, respectively. By leveraging wafer-level testing to estimate the characteristics of final chip-level devices, we anticipate a reduction in testing costs. To demonstrate the validity of the proposed testing process, we fabricated and measured silicon-on-insulator ring resonator devices on both wafer and chip levels. The results showed good agreement between the two levels of measurement, validating the effectiveness of our proposed testing process.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141673645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Polarization architecture was incorporated into metastable Nb-doped TiO2-SnO2 to deliver electron accumulation at the localized TiO2-SnO2 compositionally fluctuating interface. Specimens were quenched from various holding temperatures to ambient temperature in air to avoid bimodal decomposition into TiO2 and SnO2 endmembers. At the lowest sintering temperature of 1,400°C, the mixed phase containing TiO2- and SnO2-rich compositions existed as an intermediate state to the single-phase solid solution. The phase boundary became more ambiguous with increasing sintering temperature, and the compositional fluctuation size reduced to single nanometers at 1,500°C. The permittivity due to the interfacial polarization, ε interface, increased steadily with increasing sintering temperature. The larger ε interface values at higher temperatures are attributed to the greater density of the compositionally fluctuating phase interface, which leads to greater electron accumulation at the energy barrier between the two semiconducting layers.
{"title":"Polarization at the compositional interface in Nb-doped metastable TiO2-SnO2 solid solutions","authors":"Takashi Teranishi, Junsuke Satake, Shinya Kondo, Akira Kishimoto","doi":"10.35848/1347-4065/ad5e8d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5e8d","url":null,"abstract":"\u0000 Polarization architecture was incorporated into metastable Nb-doped TiO2-SnO2 to deliver electron accumulation at the localized TiO2-SnO2 compositionally fluctuating interface. Specimens were quenched from various holding temperatures to ambient temperature in air to avoid bimodal decomposition into TiO2 and SnO2 endmembers. At the lowest sintering temperature of 1,400°C, the mixed phase containing TiO2- and SnO2-rich compositions existed as an intermediate state to the single-phase solid solution. The phase boundary became more ambiguous with increasing sintering temperature, and the compositional fluctuation size reduced to single nanometers at 1,500°C. The permittivity due to the interfacial polarization, ε\u0000 interface, increased steadily with increasing sintering temperature. The larger ε\u0000 interface values at higher temperatures are attributed to the greater density of the compositionally fluctuating phase interface, which leads to greater electron accumulation at the energy barrier between the two semiconducting layers.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"2 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141681447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.35848/1347-4065/ad5ee6
Yuzhang Wu, Y. Magari, P. Ghediya, Yu-qiao Zhang, Y. Matsuo, Hiromichi Ohta
Polycrystalline indium oxide-based thin film transistors (In2O3 TFTs) have attracted considerable attention because of high field effect mobility (μFE ~100 cm2 V−1 s−1). However, In2O3 TFTs exhibit poor reliability owing to the adsorption and/or desorption of gas molecules at the grain boundaries. The incorporation of Zn suppresses the crystallization of In2O3. Herein, we systematically studied the effect of Zn incorporation into In2O3 TFTs. The crystallization of In2O3 was suppressed when the Zn concentration ranging from 25% to 68%. Amorphous IZO TFTs with 25% Zn exhibited the highest μFE of 41 cm2 V−1 s−1 and excellent reliability. In contrast, polycrystalline IZO TFTs showed a low μFE <12 cm2 V−1 s−1 due to the formation of grain boundaries, and poor reliability after positive gate bias, mostly due to electron trapping at the polycrystalline/insulator interface. These results render an approach to realize In2O3 TFTs that show reasonably high μFE and excellent reliability.
{"title":"High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors","authors":"Yuzhang Wu, Y. Magari, P. Ghediya, Yu-qiao Zhang, Y. Matsuo, Hiromichi Ohta","doi":"10.35848/1347-4065/ad5ee6","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5ee6","url":null,"abstract":"\u0000 Polycrystalline indium oxide-based thin film transistors (In2O3 TFTs) have attracted considerable attention because of high field effect mobility (μFE ~100 cm2 V−1 s−1). However, In2O3 TFTs exhibit poor reliability owing to the adsorption and/or desorption of gas molecules at the grain boundaries. The incorporation of Zn suppresses the crystallization of In2O3. Herein, we systematically studied the effect of Zn incorporation into In2O3 TFTs. The crystallization of In2O3 was suppressed when the Zn concentration ranging from 25% to 68%. Amorphous IZO TFTs with 25% Zn exhibited the highest μFE of 41 cm2 V−1 s−1 and excellent reliability. In contrast, polycrystalline IZO TFTs showed a low μFE <12 cm2 V−1 s−1 due to the formation of grain boundaries, and poor reliability after positive gate bias, mostly due to electron trapping at the polycrystalline/insulator interface. These results render an approach to realize In2O3 TFTs that show reasonably high μFE and excellent reliability.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141682200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.35848/1347-4065/ad5e26
Jiahao Wang, Takahiro Kozawa
Novel developers with low biotoxicity have attracted considerable attention with respect to ensuring environmental sustainability. In this study, the dissolution dynamics of poly(4-hydroxylstyrene) (PHS) partially protected with a t-butoxycarbonyl (t-Boc) group in alkyltrimethylammonium hydroxide and tetraethylammonium hydroxide aqueous solutions (0.26 N) were investigated by the quartz crystal microbalance method. One of the methyl groups of tetramethylammonium hydroxide (TMAH) was substituted by ethyl, propyl, and butyl groups. Depending on the developer used, the dissolution dynamics of PHS and t-Boc-protected PHS (t-Boc PHS) films showed different tendencies. The dissolution rate of PHS was higher in the TMAH developer than in the butyltrimethylammonium hydroxide (B-TMAH) developer, whereas that of the t-Boc PHS (30 mol%-protected) film was higher in the B-TMAH developer than in the TMAH developer. The elongation of one of the alkyl chains is beneficial for the penetration of the developer and the separation of nonpolar molecular interactions among t-Boc PHS molecules.
{"title":"Dissolution dynamics of poly(4-hydroxystyrene) partially protected with t-butoxycarbonyl group in alkyltrimethylammonium hydroxide aqueous developers","authors":"Jiahao Wang, Takahiro Kozawa","doi":"10.35848/1347-4065/ad5e26","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5e26","url":null,"abstract":"\u0000 Novel developers with low biotoxicity have attracted considerable attention with respect to ensuring environmental sustainability. In this study, the dissolution dynamics of poly(4-hydroxylstyrene) (PHS) partially protected with a t-butoxycarbonyl (t-Boc) group in alkyltrimethylammonium hydroxide and tetraethylammonium hydroxide aqueous solutions (0.26 N) were investigated by the quartz crystal microbalance method. One of the methyl groups of tetramethylammonium hydroxide (TMAH) was substituted by ethyl, propyl, and butyl groups. Depending on the developer used, the dissolution dynamics of PHS and t-Boc-protected PHS (t-Boc PHS) films showed different tendencies. The dissolution rate of PHS was higher in the TMAH developer than in the butyltrimethylammonium hydroxide (B-TMAH) developer, whereas that of the t-Boc PHS (30 mol%-protected) film was higher in the B-TMAH developer than in the TMAH developer. The elongation of one of the alkyl chains is beneficial for the penetration of the developer and the separation of nonpolar molecular interactions among t-Boc PHS molecules.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"21 45","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141685775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Poly(4-hydroxystyrene) (PHS) molecules in solid films are connected each other through polar and nonpolar molecular interaction and hydrogen bonds. Although the dissociation of phenolic hydroxyl groups plays the major role in the dissolution of PHS films in tetramethylammonium hydroxide (TMAH) aqueous developer, it is important to clarify the effects of other interactions. In this study, we investigated the dissolution dynamics of partially protected PHS in organic developers by a quartz crystal microbalance method to deepen the fundamental understanding of the dissolution dynamics of chemically amplified resists. The dissolution dynamics in the solvents, in which the phenolic hydroxyl groups are hardly dissociated, was measured. In 50 vol% methanol aqueous developer, a large swelling was observed. By decreasing the polarity of developer, the dissolution dynamics was significantly changed. In the hexyl acetate, the dissolution kinetics of PHS films became similar to that in TMAH aqueous developer although the dissolution mechanism is different.
{"title":"Dissolution dynamics of partially protected poly(4-hydroxystyrene) in organic developers investigated by quartz crystal microbalance (QCM) method","authors":"Yuko Tsutsui Ito, Kyoko Watanabe, Takahiro Kozawa, Kazuo Sakamoto, Makoto Muramatsu","doi":"10.35848/1347-4065/ad5e27","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5e27","url":null,"abstract":"\u0000 Poly(4-hydroxystyrene) (PHS) molecules in solid films are connected each other through polar and nonpolar molecular interaction and hydrogen bonds. Although the dissociation of phenolic hydroxyl groups plays the major role in the dissolution of PHS films in tetramethylammonium hydroxide (TMAH) aqueous developer, it is important to clarify the effects of other interactions. In this study, we investigated the dissolution dynamics of partially protected PHS in organic developers by a quartz crystal microbalance method to deepen the fundamental understanding of the dissolution dynamics of chemically amplified resists. The dissolution dynamics in the solvents, in which the phenolic hydroxyl groups are hardly dissociated, was measured. In 50 vol% methanol aqueous developer, a large swelling was observed. By decreasing the polarity of developer, the dissolution dynamics was significantly changed. In the hexyl acetate, the dissolution kinetics of PHS films became similar to that in TMAH aqueous developer although the dissolution mechanism is different.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141684515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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