Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.134460
M. Sypniewska, R. Szczęsny, P. Popielarski, K. Strzałkowski, B. Derkowska-Zielinska
Article history: Received 02 Jun. 2020 Received in revised form 27 Aug. 2020 Accepted 31 Aug. 2020 ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
{"title":"Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method","authors":"M. Sypniewska, R. Szczęsny, P. Popielarski, K. Strzałkowski, B. Derkowska-Zielinska","doi":"10.24425/opelre.2020.134460","DOIUrl":"https://doi.org/10.24425/opelre.2020.134460","url":null,"abstract":"Article history: Received 02 Jun. 2020 Received in revised form 27 Aug. 2020 Accepted 31 Aug. 2020 ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573–873 K. Photoluminescence was carried out in the temperature range of 20–300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"11 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81723541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139383
J. Suder, K. Podbucki, T. Marciniak, A. Dabrowski
Article history: Received 10 Sep. 2021 Accepted 28 Sep. 2021 Available online 12 Nov. 2021 The paper analyses the operation of different types of electronic colour sensors based on the light spectrum analysis. The application goal was to detect the type of the airport lamp based on differences in colour components of the light emitted by luminaires with specific spectral characteristics. Recognition of airport lamps is based on the analysis of the light spectrum. Proposed solution allows for an automatic software selection of appropriate conversion factors and comparison with specific standards necessary for this type of measurements. Various types of sensors were discussed and the AS7262 sensor was examined in detail. The colour sensor and the light intensity sensor were used in the mobile control device for examining elevated airport lamps and in the measurement platform for quality testing of embedded airport lamps. Two additional aspects were investigated: 1) influence of an additional acrylic glass cover; 2) distance between airport lamps and the spectrum sensor.
{"title":"Spectrum sensors for detecting type of airport lamps in a light photometry system","authors":"J. Suder, K. Podbucki, T. Marciniak, A. Dabrowski","doi":"10.24425/opelre.2021.139383","DOIUrl":"https://doi.org/10.24425/opelre.2021.139383","url":null,"abstract":"Article history: Received 10 Sep. 2021 Accepted 28 Sep. 2021 Available online 12 Nov. 2021 The paper analyses the operation of different types of electronic colour sensors based on the light spectrum analysis. The application goal was to detect the type of the airport lamp based on differences in colour components of the light emitted by luminaires with specific spectral characteristics. Recognition of airport lamps is based on the analysis of the light spectrum. Proposed solution allows for an automatic software selection of appropriate conversion factors and comparison with specific standards necessary for this type of measurements. Various types of sensors were discussed and the AS7262 sensor was examined in detail. The colour sensor and the light intensity sensor were used in the mobile control device for examining elevated airport lamps and in the measurement platform for quality testing of embedded airport lamps. Two additional aspects were investigated: 1) influence of an additional acrylic glass cover; 2) distance between airport lamps and the spectrum sensor.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"83 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81062878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2022.140858
{"title":"Indoor localization based on visible light communication and machine learning algorithms","authors":"","doi":"10.24425/opelre.2022.140858","DOIUrl":"https://doi.org/10.24425/opelre.2022.140858","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"35 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81406475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.139384
A. M. Alaíz-Gudín, A. Gonzalez-Marcos
Article history: Received 12 Sep. 2021 Received in revised form 29 Sep. 2021 Accepted 29 Sep. 2021 Available online 2 Nov. 2021 Advances in photonic technologies, with new processes and scopes of photonic integrated circuits, have generated a lot of interest as the field allows to obtain sensors with reduced size and cost and build systems with high interconnectivity and information density. In this work, answering the needs of photonic sensors that must be portable, more energy efficient, and more accurate than their electrical counterparts, also with a view to the emerging field of neuromorphic photonics, a versatile device is presented. The proposed device makes use of the well-known advantages provided by optical bistability. By combining two distributed feedback-multi quantum well semiconductor laser structures, this new optical multiple inputs digital output device offers various essential purposes (such as logic gates, wavelength detector and monitoring) with no need for specific manufacturing for each of them. Through a commercial computer-aided design tool, VPIphotonicsTM, the necessary characterization of proposed device is also described.
{"title":"Optical MIDO – Multiple Inputs - Digital Output – device","authors":"A. M. Alaíz-Gudín, A. Gonzalez-Marcos","doi":"10.24425/opelre.2021.139384","DOIUrl":"https://doi.org/10.24425/opelre.2021.139384","url":null,"abstract":"Article history: Received 12 Sep. 2021 Received in revised form 29 Sep. 2021 Accepted 29 Sep. 2021 Available online 2 Nov. 2021 Advances in photonic technologies, with new processes and scopes of photonic integrated circuits, have generated a lot of interest as the field allows to obtain sensors with reduced size and cost and build systems with high interconnectivity and information density. In this work, answering the needs of photonic sensors that must be portable, more energy efficient, and more accurate than their electrical counterparts, also with a view to the emerging field of neuromorphic photonics, a versatile device is presented. The proposed device makes use of the well-known advantages provided by optical bistability. By combining two distributed feedback-multi quantum well semiconductor laser structures, this new optical multiple inputs digital output device offers various essential purposes (such as logic gates, wavelength detector and monitoring) with no need for specific manufacturing for each of them. Through a commercial computer-aided design tool, VPIphotonicsTM, the necessary characterization of proposed device is also described.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"36 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90702994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.135258
{"title":"Processing of printed circuit boards using a 532 nm green laser","authors":"","doi":"10.24425/opelre.2020.135258","DOIUrl":"https://doi.org/10.24425/opelre.2020.135258","url":null,"abstract":"","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"11 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83690325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2020.132503
A. Kurzych, L. Jaroszewicz, J. Kowalski, B. Sakowicz
Article history: Received 25 Mar. 2020 Received in revised form 01 Apr. 2020 Accepted 01 Apr. 2020 This paper deals with an issue of a rotational motion impact on a construction and presents civil engineering applications of a fiber optic rotational seismograph named Fiber-Optic System for Rotational Events & Phenomena Monitoring. It has been designed for a longterm building monitoring and structural rotations’ recording. It is based on the Sagnac effect which enables to detect one-axis rotational motion in a direct way and without any reference system. It enables to detect a rotation component in the wide range of a signal amplitude from 10 rad/s to 10 rad/s, as well as a frequency from DC to 1000 Hz. Data presented in this paper show the behavior of a reinforced concrete frame construction on different floors. Several measurements were carried out by placing the applied sensor on different floor levels of a building. The laboratory and in-situ measurements confirmed that Fiber-Optic System for Rotational Events & Phenomena Monitoring is an accurate and suitable device for applications in civil engineering.
{"title":"Investigation of rotational motion in a reinforced concrete frame construction by a fiber optic gyroscope","authors":"A. Kurzych, L. Jaroszewicz, J. Kowalski, B. Sakowicz","doi":"10.24425/opelre.2020.132503","DOIUrl":"https://doi.org/10.24425/opelre.2020.132503","url":null,"abstract":"Article history: Received 25 Mar. 2020 Received in revised form 01 Apr. 2020 Accepted 01 Apr. 2020 This paper deals with an issue of a rotational motion impact on a construction and presents civil engineering applications of a fiber optic rotational seismograph named Fiber-Optic System for Rotational Events & Phenomena Monitoring. It has been designed for a longterm building monitoring and structural rotations’ recording. It is based on the Sagnac effect which enables to detect one-axis rotational motion in a direct way and without any reference system. It enables to detect a rotation component in the wide range of a signal amplitude from 10 rad/s to 10 rad/s, as well as a frequency from DC to 1000 Hz. Data presented in this paper show the behavior of a reinforced concrete frame construction on different floors. Several measurements were carried out by placing the applied sensor on different floor levels of a building. The laboratory and in-situ measurements confirmed that Fiber-Optic System for Rotational Events & Phenomena Monitoring is an accurate and suitable device for applications in civil engineering.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"18 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83813959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/opelre.2021.135823
M. Kopytko, E. Gomółka, T. Manyk, K. Michalczewski, Ł. Kubiszyn, J. Rutkowski, P. Martyniuk
Article history: Received 11 Sep. 2020 Received in revised form 8 Oct. 2020 Accepted 18 Oct 2020 Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
{"title":"Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice","authors":"M. Kopytko, E. Gomółka, T. Manyk, K. Michalczewski, Ł. Kubiszyn, J. Rutkowski, P. Martyniuk","doi":"10.24425/opelre.2021.135823","DOIUrl":"https://doi.org/10.24425/opelre.2021.135823","url":null,"abstract":"Article history: Received 11 Sep. 2020 Received in revised form 8 Oct. 2020 Accepted 18 Oct 2020 Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"55 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90107528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-01DOI: 10.24425/OPELRE.2021.135825
A. Memon, K. Chen
Article history: Received 15 Dec. 2020 Received in revised form 7 Mar. 2021 Accepted 8 Mar. 2021 Adopting mode division multiplex (MDM) technology as the next frontier for optical fiber communication and on-chip optical interconnection systems is becoming very promising because of those remarkable experimental results based on MDM technology to enhance capacity of optical transmission and, hence, making MDM technology an attractive research field. Consequently, in recent years the large number of new optical devices used to control modes, for example, mode converters, mode filters, mode (de)multiplexers, and modeselective switches, have been developed for MDM applications. This paper presents a review on the recent advances on mode converters, a key component usually used to convert a fundamental mode into a selected high-order mode, and vice versa, at the transmitting and receiving ends in the MDM transmission system. This review focuses on the mode converters based on planar lightwave circuit (PLC) technology and various PLC-based mode converters applied to the above two systems and realized with different materials, structures, and technologies. The basic principles and performances of these mode converters are summarized.
{"title":"Recent advances in mode converters for a mode division multiplex transmission system","authors":"A. Memon, K. Chen","doi":"10.24425/OPELRE.2021.135825","DOIUrl":"https://doi.org/10.24425/OPELRE.2021.135825","url":null,"abstract":"Article history: Received 15 Dec. 2020 Received in revised form 7 Mar. 2021 Accepted 8 Mar. 2021 Adopting mode division multiplex (MDM) technology as the next frontier for optical fiber communication and on-chip optical interconnection systems is becoming very promising because of those remarkable experimental results based on MDM technology to enhance capacity of optical transmission and, hence, making MDM technology an attractive research field. Consequently, in recent years the large number of new optical devices used to control modes, for example, mode converters, mode filters, mode (de)multiplexers, and modeselective switches, have been developed for MDM applications. This paper presents a review on the recent advances on mode converters, a key component usually used to convert a fundamental mode into a selected high-order mode, and vice versa, at the transmitting and receiving ends in the MDM transmission system. This review focuses on the mode converters based on planar lightwave circuit (PLC) technology and various PLC-based mode converters applied to the above two systems and realized with different materials, structures, and technologies. The basic principles and performances of these mode converters are summarized.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"39 1","pages":""},"PeriodicalIF":1.6,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73385896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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