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Design of a nested photonic crystal fiber supporting 76 + 36 OAM modes for fiber communication 一种支持76 + 36 OAM模式的嵌套光子晶体光纤的设计
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-04 DOI: 10.1007/s10825-024-02257-3
Khalequzzaman Ansary, Md. Mehedi Hassan, Mohammed Nadir Bin Ali, FNU Israfil, Mohammad Sarwar Hossain Mollah, Abdullah Bin Kasem Bhuiyan, Bikash Kumar Paul

This study introduces a distinctive entwined photonic crystal fiber (PCF) featuring two distinct and independent directed mode sections, collectively supporting a total of 112 orbital angular momentum (OAM) modes, comprising 76 + 36 modes. The confinement loss (CL) ranges approximately between (2.49701times 1{0}^{-11}) and (9.13425times 1{0}^{-9} text{dB}/text{m},) while highest attained OAM purity is (99.31969%) and (98.99258%) at (H{E}_{2, 1}) mode, respectively, for both inner and outer rings. All the modes demonstrate ERIDs exceeding (1{0}^{-4}), and minimum dispersion variation observed is (-856 text{ps}/text{km}-text{nm}). Additionally, we achieved an outstanding isolation performance with the highest attained ISO reaching (294 text{dB}) at ({text{HE}}_{9, 1}) mode and observed a substantial effective mode area of 9.15 μm2 and 25.8μm2, respectively, for inner and outer rings. This research leverages COMSOL Multiphysics' finite element method (FEM) and perfectly matched layer (PML) capabilities alongside MATLAB processing to calculate all key properties of the proposed fiber. Therefore, the suggested PCF demonstrates promising prospects for extended-range, high-capacity data transmission within optical communications and applications related to OAM sensing.

本研究介绍了一种独特的缠绕光子晶体光纤(PCF),具有两个不同且独立的定向模式部分,总共支持112个轨道角动量(OAM)模式,包括76 + 36个模式。约束损失(CL)范围大约在(2.49701times 1{0}^{-11})和(9.13425times 1{0}^{-9} text{dB}/text{m},)之间,而在(H{E}_{2, 1})模式下,内环和外环获得的最高OAM纯度分别为(99.31969%)和(98.99258%)。所有模态的erid均大于(1{0}^{-4}),色散变化最小为(-856 text{ps}/text{km}-text{nm})。此外,我们还获得了出色的隔离性能,在({text{HE}}_{9, 1})模式下获得的最高ISO达到(294 text{dB}),并观察到内环和外环的有效模式面积分别为9.15 μm2和25.8μm2。本研究利用COMSOL Multiphysics的有限元方法(FEM)和完全匹配层(PML)功能以及MATLAB处理来计算拟议光纤的所有关键特性。因此,建议的PCF在光通信和与OAM传感相关的应用中展示了扩展范围,高容量数据传输的良好前景。
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引用次数: 0
Properties of cubic GdAlO3 perovskite under pressure: density functional theory and Monte Carlo simulations 压力下立方GdAlO3钙钛矿的性质:密度泛函理论和蒙特卡罗模拟
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-04 DOI: 10.1007/s10825-024-02252-8
Bilal Aladerah, Abeer Alrousan, Abdalla Obeidat, Abdullah Al-Sharif

This study investigates the influence of external hydrostatic pressure on the mechanical, electronic, and magnetic properties of cubic GdAlO3 using density functional theory (DFT) and Monte Carlo (MC) simulations. Mechanically, upon pressure increase, a sizable increase in the elastic constants C12, C11, and C44, as well as in bulk, Young's, and shear moduli of GdAlO3, is observed. This indicates an enhanced stiffness and resistance to deformation upon pressure increase. The band gap shows a notable increase in pressure, which is useful in tuning the electronic properties of specific electronic devices for potential applications. In addition, a stable overall magnetic moment is observed under pressure variation, with increased exchange interaction parameters for Gd-Gd pairs, indicating more robust ferromagnetic ordering. Furthermore, the Monte Carlo simulation revealed increased Curie temperature (TC) from 67K at 0 GPa to 142K at 90 GPa, underscoring strengthened magnetic interactions and thermal resilience under compression.

本研究利用密度泛函理论(DFT)和蒙特卡罗(MC)模拟研究了外部静水压力对立方GdAlO3的机械、电子和磁性能的影响。力学上,随着压力的增加,可以观察到GdAlO3的弹性常数C12、C11和C44以及体积模量、杨氏模量和剪切模量有相当大的增加。这表明在压力增加时刚度和抗变形能力增强。带隙显示出压力的显著增加,这对于调整特定电子器件的电子特性具有潜在的应用价值。此外,在压力变化下观察到稳定的总磁矩,Gd-Gd对的交换相互作用参数增加,表明铁磁有序性更强。此外,蒙特卡罗模拟显示,居里温度(TC)从0 GPa时的67K增加到90 GPa时的142K,表明磁性相互作用和压缩下的热弹性增强。
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引用次数: 0
Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se) 基于第一性原理光谱筛选硫系钙钛矿CaZrX3 (X = S, Se)的潜在光伏吸收剂研究
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-03 DOI: 10.1007/s10825-024-02245-7
Naincy Pandit, Rashmi Singh, Tarun Kumar Joshi, Akash Shukla, Peeyush Kumar Kamlesh, Anusha Dubey, Tanuj Kumar, Manendra S. Chauhan, Ajay Singh Verma

Metal chalcogenide perovskites have a number of benefits over lead-halide perovskites, including superior moisture resistance, light-induced degradation together with nontoxic elemental composition, higher absorption, and exceptional carrier transport properties. These materials have orthorhombic phase Pnma and are potential candidate materials to be used as absorber materials in solar cells. In this study, we propose metal chalcogenide perovskites CaZrX3 (X = S, Se) as a candidate absorber material. Therefore, the investigation of the structural, electrical, optical, thermal, and thermoelectric properties of CaZrX3, where X = S, Se, is being carried out using first principles methods. These proposed semiconducting compounds will meet the requirement for stability against volume change. These materials show a direct band gap of 1.812 eV and 1.117 eV at the Γ point. To better understand the optical transitions in the material, the real and imaginary parts of the dielectric function have been calculated. The remarkable absorption coefficient ((alpha )) exceeding 105 cm−1 above photon energy exceeding bandgap indicates that the materials are suitable for the visible light absorption. For the estimation of photovoltaic performance of CaZrX3 (X = S, Se) and to demonstrate the high photo-absorptivity, the spectroscopic-limited maximum efficiency has been calculated. The results show a maximum photovoltaic efficiency of 26.4% and 32.4% for CaZrS3 and CaZrSe3 respectively at the thickness L = 100 nm. We have also calculated the thermoelectric coefficients. These perovskites are gaining more attention as a thermoelectric material because of their higher Seebeck coefficient, and ultra-low thermal conductivity.

与卤化铅钙钛矿相比,金属硫系钙钛矿具有许多优点,包括优越的抗湿性、光诱导降解以及无毒元素组成、更高的吸收率和特殊的载流子传输特性。这些材料具有正交相Pnma,是太阳能电池吸收材料的潜在候选材料。在本研究中,我们提出金属硫系钙钛矿CaZrX3 (X = S, Se)作为候选吸收材料。因此,使用第一性原理方法研究X = S, Se的CaZrX3的结构、电学、光学、热学和热电性质。这些半导体化合物将满足对体积变化的稳定性要求。这些材料在Γ点处的直接带隙分别为1.812 eV和1.117 eV。为了更好地理解材料中的光学跃迁,我们计算了介电函数的实部和虚部。光子能量超过带隙以上的显著吸收系数((alpha ))超过105 cm−1,表明该材料适合可见光吸收。为了估计CaZrX3 (X = S, Se)的光伏性能,并证明其具有较高的光吸收率,计算了光谱限制下的最大效率。结果表明,最大光伏效率为26.4% and 32.4% for CaZrS3 and CaZrSe3 respectively at the thickness L = 100 nm. We have also calculated the thermoelectric coefficients. These perovskites are gaining more attention as a thermoelectric material because of their higher Seebeck coefficient, and ultra-low thermal conductivity.
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引用次数: 0
Realization of energy efficient GF Xtime multiplier using quantum dot cellular automata (QCA) for AES-MixColumn 利用量子点元胞自动机(QCA)实现AES-MixColumn的高能效GF x时间乘法器
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02248-4
P. Rajasekar, H. Mangalam, K. H. Shakthi Murugan, K. Kalaiselvi

Recent advances in VLSI technology have led to the introduction of Quantum dot Cellular Automata (QCA) technology as a possible alternative to CMOS technology. This is owing mostly to its tiny feature size, high operating frequency, and low power consumption. During the preliminary research stage, QCA has been used to execute diverse models of combinatorial and sequential circuits, which serve as the fundamental functional components in a wide range of applications. Currently, research is focusing on the implementation of application-oriented architectures using QCA. The motivation behind this research work is to incorporate Galois Field (GF) functions into the AES Mix- Columns operation. We have proposed an Xtime multiplier implemented using QCA technology and analyzed the multiplier using various XOR models of QCA.

VLSI技术的最新进展导致量子点元胞自动机(QCA)技术的引入,作为CMOS技术的可能替代方案。这主要是由于它的特征尺寸小,工作频率高,功耗低。在初步研究阶段,QCA已被用于执行组合和顺序电路的各种模型,这些模型在广泛的应用中作为基础功能组件。目前,研究的重点是利用QCA实现面向应用的体系结构。这项研究工作背后的动机是将伽罗瓦场(GF)函数纳入AES混合列操作。我们提出了一种使用QCA技术实现的x时间乘法器,并使用QCA的各种异或模型分析了该乘法器。
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引用次数: 0
Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers 下一代高性能复杂光顺序电路:GaAlAs定向耦合器中的电光调制
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02242-w
Ajay Yadav, Amit Prakash, Santosh Kumar, Ajay Kumar

The concept of optical switching utilizing directional couplers and the electro-optic effect has been leveraged to design various sequential circuits. By applying an appropriate voltage to the core of the couplers, switching of optical pulse signals is achieved through optical tunneling phenomena. This paper presents a comprehensive mathematical analysis of electro-optic effect-based switching, demonstrating its efficacy through 3-D MATLAB simulations of the optical switch layout. A clocked D flip-flop, incorporating an optical delay unit, is examined using 3-D numerical simulations, illustrating the spatial propagation of optical pulses and providing time domain plots for verification. Employing the proposed clocked D flip-flop as a basic module, optically clocked ripple up/down-counters are implemented. Additionally, the design and analysis of an optical 4-bit shift register are discussed, showcasing its ability to effectively shift pulses via 3-D simulations of optical field propagation and time domain plots. This study presents a comprehensive analysis of the extinction ratio, contrast ratio, and amplitude modulation characteristics of the proposed optical code converter circuit. These findings offer an effective methodology for implementing both basic sequential models and complex optical circuits.

利用定向耦合器和电光效应的光开关概念已被用于设计各种顺序电路。通过在耦合器的核心处施加适当的电压,通过光隧穿现象实现光脉冲信号的切换。本文对基于电光效应的开关进行了全面的数学分析,并通过对光电开关布局的三维MATLAB仿真证明了其有效性。一个时钟D触发器,结合一个光延迟单元,使用三维数值模拟,说明了光脉冲的空间传播,并提供时域图进行验证。采用所提出的时钟D触发器作为基本模块,实现了光时钟纹波上/下计数器。此外,讨论了光学4位移位寄存器的设计和分析,通过光场传播的三维模拟和时域图展示了其有效移位脉冲的能力。本研究全面分析了所提出的光码转换电路的消光比、对比度和调幅特性。这些发现为实现基本序列模型和复杂光学电路提供了一种有效的方法。
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引用次数: 0
Computation of an efficient pipelined fast Fourier transform architecture characterized with real-valued functions 以实值函数为特征的高效流水线快速傅里叶变换体系的计算
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02237-7
Surya Prasad, Arunachalaperumal Chellaperumal

The computational characteristics of the fast Fourier transform associated with real-time information signals using traditional techniques is deemed the maximal hardware void with peak power consumption, which is an essential task for any researchers while illustrating the designs of architectures in very large-scale integration circuits. The proposed scheme associated with the pipeline reduces the time of processing at the cost of several registers, and to ensure the efficient contribution for reducing the power, the modification over the complex and critical multiplier has been introduced with minimal internal real-time multipliers, which in turn is reconstructed by canonical signed digit multipliers with the adaptation over the technique of resource sharing. The verification of the results of experimentation has been made. It is inferred that the proposed incorporated design is highly efficient regarding area, speed, and power compared to state-of-the-art techniques.

利用传统技术对实时信息信号进行快速傅里叶变换的计算特性被认为是最大的硬件空间和峰值功耗,这是任何研究人员在说明超大规模集成电路的架构设计时所面临的重要任务。该方案以减少多个寄存器的占用为代价,减少了处理时间,并且为了保证有效地降低功耗,采用最小的内部实时乘法器对复杂和关键乘法器进行修改,然后利用正则符号数乘法器对其进行重构,并对资源共享技术进行自适应。对实验结果进行了验证。据推测,与最先进的技术相比,拟议的合并设计在面积、速度和功率方面都非常高效。
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引用次数: 0
Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs 基于LSPR和SPPs强耦合的等离子体场增强激光与包含领结孔和圆柱孔的MIM纳米结构的相互作用
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02258-2
Mohsenifard Atefeh, Mohebbi Masoud

In this paper, a metal–insulator–metal (MIM) array nanostructure consisting of a bowtie aperture and cylindrical holes is proposed as a field amplifier. This hybrid array consists of a grating film made of gold in which some cylindrical holes are replaced with a bowtie aperture, sapphire substrate, and finally a metal film. The array of cylindrical holes acting as a two-dimensional grating can effectively excite propagating surface plasmon polariton modes along a metal film, but the electric field enhancement inside it is relatively weak. On the other hand, the bowtie aperture, with its sharp corners and small gap, can provide a greater intensity enhancement factor within its gap. The combination of these two MIM nanostructures forms a strong coupling between the propagating and localized surface plasmons, leading to an improvement in field confinement in the bowtie aperture in the sub-diffraction limit and its magnitude increase of 115 times. This effective enhancement can be used in plasmonic sensors, lasers, SERS, etc., applications.

本文提出了一种由领结孔和圆柱孔组成的金属-绝缘体-金属(MIM)阵列纳米结构作为场放大器。这种混合阵列包括一个由金制成的光栅薄膜,其中一些圆柱形孔被一个领结孔取代,蓝宝石衬底,最后是一个金属薄膜。作为二维光栅的圆柱孔阵列可以有效地激发沿金属薄膜传播的表面等离子激元偏振子模式,但其内部的电场增强相对较弱。另一方面,领结孔径由于其棱角锐利、间隙小,可以在其间隙内提供更大的强度增强因子。这两种MIM纳米结构的结合形成了传播和局域表面等离子体激元之间的强耦合,导致亚衍射极限弓形孔的场约束得到改善,其量级增加了115倍。这种有效的增强可用于等离子体传感器、激光器、SERS等应用。
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引用次数: 0
A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors 一种将量子约束效应集成到隧道场效应晶体管TCAD模拟中的简单方法
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02253-7
Bui Huu Thai, Chun-Hsing Shih, Nguyen Dang Chien

Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based on a post-processing computation in which 1D Schrodinger equations were first solved manually, then their solutions were used to modify the conduction and valence band profiles in the 2D TCAD simulations. For each bias condition, only a 1D potential profile at the position of the maximum tunneling generation was adopted to describe the QC through the solutions of Schrodinger equations for electrons and holes. The quantum-simulated results based on this simple method show good agreements with both quantum–mechanical simulations based on a sophisticated approach and experimental data. The analyses also show that the van Dort quantum model available in commercial TCAD simulators is not appropriate for describing QCEs in TFETs. The approach can be practically employed in studying the influences of QCEs on the electrical characteristics, in particular the dependence of QCEs on the body thickness of TFET devices.

量子约束效应(QCEs)在隧道场效应晶体管(tfet)中非常重要,因为它们的工作是基于带对带隧穿机制。本研究提出了一种将qce集成到tfet的半经典TCAD模拟中的简单方法。该方法基于后处理计算,首先手动求解一维薛定谔方程,然后将其解用于修改二维TCAD模拟中的导价带和价带剖面。对于每个偏置条件,仅采用最大隧穿产生位置的一维势分布,通过电子和空穴的薛定谔方程解来描述QC。基于这种简单方法的量子模拟结果与基于复杂方法的量子力学模拟和实验数据都有很好的一致性。分析还表明,商用TCAD模拟器中可用的van Dort量子模型不适用于描述tfet中的qce。该方法可用于研究qce对器件电特性的影响,特别是qce对器件体厚的依赖关系。
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引用次数: 0
Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon 基于v形边型扶手椅石墨烯纳米带的双势垒量子阱结构的量子输运性质
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02264-4
Bikramjit Basumatary, Agile Mathew

A double-barrier quantum well is created using a larger band gap V-cut modified armchair graphene nanoribbon (AGNR) for the barrier region and a pristine AGNR with a smaller bandgap for the channel region. The numerical non-equilibrium Green’s function (NEGF) method, based on the pi-orbital tight-binding model, is employed to study the quantum transport properties of the device. The effects of various dimensional parameters, such as contact width, channel length, and distance between V-cuts in the barrier region, are investigated. The plot of the local density of states (LDOS) shows the formation of a single quantized quasi-energy state in the channel region, corresponding to a peak in transmission. The V–I characteristics of the device exhibit negative differential resistance (NDR) regions for a certain range of bias values. This device’s resonant tunneling performance parameters are compared with those of a similar, previously reported structure.

双势垒量子阱使用较大带隙的V-cut修饰扶手型石墨烯纳米带(AGNR)作为势垒区,通道区域使用较小带隙的原始AGNR。采用基于pi轨道紧密结合模型的数值非平衡格林函数(NEGF)方法研究了该器件的量子输运性质。研究了各种尺寸参数,如接触宽度、通道长度和势垒区v形切口之间的距离等。局域态密度(LDOS)图显示在通道区域形成了一个单一的量子化准能态,对应于传输中的峰值。该器件的V-I特性在一定偏置范围内呈现负差分电阻(NDR)区域。将该装置的谐振隧道性能参数与先前报道的类似结构进行了比较。
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引用次数: 0
All-optical photonic crystal logic gates and functions based on threshold logic 基于阈值逻辑的全光光子晶体逻辑门和功能
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02256-4
Arash Firouzimoghaddam, Hojjat Sharifi

This paper presents a novel photonic crystal structure for designing all-optical photonic crystal logic gates and functions based on threshold logic concept. The structure offers two- and three-input AND/NAND logic gates as well as three-input majority/minority functions. In this method, the summation of inputs values connects to a threshold detector with varying threshold values in order to achieve different logic gates and functions. Furthermore, the impact of variations in the diameter and position of rods on the performance of the proposed structures has been examined. Simulation results demonstrate the successful operation of the proposed structures even in the presence of 14% variation in rod diameter, indicating that the presented logic gates exhibit minimal sensitivity to process variations. The finite difference time domain method was used to evaluate the performance of the proposed structures with a switching power requirement of is 2.5 W.

本文提出了一种基于阈值逻辑概念设计全光光子晶体逻辑门和功能的新型光子晶体结构。该结构提供两个和三个输入and /NAND逻辑门以及三个输入多数/少数功能。在该方法中,输入值的总和连接到具有不同阈值的阈值检测器,以实现不同的逻辑门和功能。此外,还研究了杆的直径和位置变化对所提出结构性能的影响。仿真结果表明,即使存在14%的杆径变化,所提出的结构也能成功运行,这表明所提出的逻辑门对工艺变化的敏感性最小。采用时域有限差分法对开关功率要求为2.5 W的结构进行了性能评价。
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引用次数: 0
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Journal of Computational Electronics
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