Journal of Computational Electronics最新文献

This article presents a study of the reliability of miscellaneous biomarker recognition in serum for both healthy and diseased males and females and the relevant sensitivity analysis using a short-gated dual-pocket-doped hetero-gate metal stack with hetero-structure tunnel FET-supported biosensor (SG-DP-HGM Bio-HTFET). The significant biomarkers preferred and modeled in this article comprise prostate-specific antigen (PSA), human epididymis protein 4 (HE4), C-erbB-2, and monokine induced by interferon gamma (MIG). The charge deduction reliant approach has been utilized, and the outcomes align through the theoretical perceptive of the model. Device optimization for superior sensitivity is achieved by using Silvaco ATLAS TCAD device simulator. A maximum 17.94% inaccuracy in sensitivity regarding sub-threshold swing (S_SS) has been obtained when we presume steric effect rather repulsive steric effect throughout the concentration deviations. Hence, repulsive steric effect must be addressed during the study of label-free biosensing.

We discuss the design and analysys of the performance of a strain modulated Ge/Ge_0.98Sn_0.02 vertical channel pin-based switch for application in mm-wave frequency. The device's performance in the mm-wave region is assessed using a Nano-mixed Quantum Corrected Strain Modified Drift–Diffusion Nonlinear mathematical (NQCSM-DD) model along with Machine Learning Framework. The study investigates the switching characteristics of the device, considering V-I characteristics, reverse recovery time, power dissipation, Insertion Loss (IL), and Isolation (ISOL).The inherent material attributes of the DUT (Device Under Test) are improved considerably by the addition of 2% of Sn into the intrinsic Ge material. The NQCSM-DD model is calibrated by analyzing the experimental and simulated performance of a flat structure-based Si pin device under similar circumstances. The detailed investigation and analysis proves that the switching performance of the proposed DUT is significantly enhanced. The results, compared with the super-lattice structure-based GaN/AlGaN pin device, show that Ge/Ge_0.98Sn_0.02 outperforms its GaN/AlGaN counterpart in terms of reverse recovery tim, power dissipation, and, IL and ISOL. The proposed DUT offer low IL (0.121 dB and 0.03671 dB for series-shunt & shunt SPST switches, respectively) and high ISOL (69.72 dB and 80.23 dB for series-shunt & shunt SPST switches, respectively) at 120 GHz . Furthermore, the Random-Forest-Regression (R-F-R) model within a Machine Learning Framework (MLF) is applied to determine the device’s efficiency. The proposed model’s reliability study is reported in this paper in details. Ge/Ge_0.98Sn_0.02 vertical channel pin-based device for the application in mm-wave frequency.

To this day, the drift-diffusion model remains the most widely applied semiconductor simulation tool. This is due to its unrivaled numerical robustness when it is discretized with the finite volume method and the Scharfetter–Gummel stabilization. Unfortunately, this stabilization is only valid for nondegenerate carrier statistics. Several extensions of the Scharfetter–Gummel scheme to degenerate semiconductors have been proposed; however, they either rely on additional approximations or lack the stability for a full-scale device simulation. In this paper, we address this issue and present a generalization of the Scharfetter–Gummel scheme using no further approximations. Our scheme works for arbitrary band structures and coarse grids and is guaranteed to be thermodynamically consistent. Similar to Scharfetter–Gummel, it leads to a diagonally dominant Jacobian (M-matrix) for the discrete continuity equation preserving its excellent stability properties. An implementation of the algorithm is available online via Zenodo under the MIT license. It has already been used in a 2D device simulation at 4K where it exhibited excellent stability at a negligible runtime penalty.

Traditional analytical models derived for Si logic devices fail to estimate the threshold voltage (V_TH) of vertical junctionless GaN power Fin-channel metal oxide semiconductor field effect transistors (VJ GaN Fin-MOSFETs). Solving two-dimensional Poisson’s equation inside the drift region of VJ GaN Fin- MOSFETs is not a viable option as of now. Thus, we report an alternate methodology to derive the analytical model for estimating the V_TH of VJ GaN Fin-MOSFETs. The proposed model uses an available baseline model followed by adding tuning parameters to the baseline model via a standard procedure. The proposed model faithfully predicts the effect of crucial geometrical and bias parameters on V_TH; along with estimating the drain induced barrier lowering effect. The proposed methodology is generic in nature; it can be applied to other (ultra)wide bandgap semiconductor based VJ power MOSFETs that are currently under extensive investigation.

We present the design and analysis of a polarization-insensitive, angular stable, conformal, miniaturized stopband frequency selective surface (FSS) for fifth-generation (5G), n258 (26 GHz) band electromagnetic (EM) shielding applications. The unit cell of the FSS comprises a basic square-loop resonator with four stub arms placed on inside of each edge. The optimized FSS resonates at 26.02 GHz, with a bandwidth (BW) of 7.43 GHz (21.96–29.39 GHz), effectively covering the desired 5G n258 band. The presented FSS exhibits a stable frequency response, enabling a well BW stability merit across a wide range of incidence angles, from 0° to 80°, for both transverse electric (TE) and transverse magnetic (TM) polarizations. Due to the thin-profile flexible substrate, FSS provides a high conformity and maintains a stable transmission response up to 180° conformal angle. To validate the simulation results, an equivalent circuit model was determined, and measurements were performed on a manufactured prototype of the FSS. And good agreement is observed between the full wave and equivalent circuit simulations, and measurement results. Finally, the novel FSS is proposed as a potential candidate for n258 band electromagnetic interference (EMI) shielding, owing to its presented advantages.

As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative (L^infty) error that is (40;)% lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.

In this paper, according to the Beer–Lambert law, we present a numerical investigation of wave attenuation in one-dimensional photonic crystals composed of SiO₂/ZrO₂, TiO₂/MgF₂, Si/Al₂O₃ and Nb₂O₅/CYTOP bilayers deposited on polycarbonate. The wave attenuation characteristics are quantitatively evaluated through optical density (OD) measurements. The simulations were performed using the transfer matrix method implemented in MATLAB for both TE and TM polarizations. The results demonstrate a strong correlation between refractive index contrast (Δn) and photonic bandgap characteristics, where higher Δn values yield broader bandgaps and enhanced attenuation. The numerical analysis reveals that both incidence angle and layer thickness significantly influence the photonic bandgap characteristics, where increasing the angle causes a blue-shift in the bandgap position according to Bragg's law, while varying the layer thickness enables precise tuning of the bandgap width. Significantly, the Si/Al₂O₃ structure achieves the widest bandgap (1200–1950 nm) and highest optical density (OD = 11.5), while the Nb₂O₅/CYTOP configuration shows good performance (OD = 10) with potential for flexible photonic devices. Polarization-dependent analysis show that TE waves maintain consistent attenuation at oblique incidence, in contrast to TM waves which show pronounced attenuation loss near Brewster's angle. These findings provide fundamental insights into material selection and structural design for optimizing photonic crystal performance.

This work presents the design and simulation of all-optical logic gates using microring (MR) resonator structures for integrated photonic applications. Ring resonators (RR) offer wavelength-selective filtering through resonance, enabling them to perform logic operations by controlling the coupling and interference of optical signals. The proposed structure consists of an MR coupled to dual straight bus waveguides in an add-drop configuration. Binary logic is implemented by analyzing the output optical intensity under varying input conditions, using specific threshold values to distinguish logic states. For both the logic gates, output intensity equal to or greater than 50% is considered logic ‘1’. Simulation results confirm that the MR structure accurately performs logic functions based on the constructive or destructive interference of the input signals within the resonator. Logical outputs are derived by comparing the transmitted optical power at the drop port against the defined thresholds. The device exhibits a compact footprint, and a fast response time, making it suitable for integration into photonic circuits. The implementation does not require any external tuning mechanisms, such as thermal or electro-optic control; the system still relies on sufficient optical input power to achieve nonlinear behavior. This work emphasizes the feasibility of using RR-based designs for compact, reconfigurable, and high-speed optical computing elements. It provides a foundation for future developments in all-optical integrated logic systems.

In this study, we present impedance spectroscopy measurements on Zn–Al layered double hydroxides (LDH) with chloride (Cl⁻) as the interlayer anion and a Zn/Al molar ratio of 2:1. Electrical properties, including conductivity, modulus, and dielectric permittivity, were examined over a temperature range of 298–363 K and a frequency (F) range of 200 Hz to 1 MHz. Our findings indicate that electrode polarization significantly influences the relaxation processes within the material. Peaks observed in the imaginary components of permittivity and modulus suggest the presence of relaxing dipoles, with these peaks shifting to higher frequencies as temperature increases, implying a reduction in relaxation time. The AC conductivity generally adheres to Jonscher’s universal power law, with minor deviations. The distinct activation energies obtained confirm that the transport mechanism in this compound is not governed by simple hopping. To further elucidate the conduction mechanism, we applied the non-overlapping small polaron tunneling model, which provides a quantum mechanical framework for understanding the AC conductivity and its F dependence. These findings contribute to a deeper understanding of the electrical behavior of LDH materials, which can be crucial for optimizing their performance in applications such as energy storage, electronics, and potentially in the development of advanced materials for solar cells.

In this work, a novel drain-side lateral heterojunction architecture is proposed to effectively suppress ambipolar conduction in tunnel FETs (TFETs). The proposed lateral heterojunction features a large bandgap GaAsP pocket on the drain side, forming a heterojunction at the channel/drain junction of the TFET. Since large bandgap materials exhibit a lower band-to-band tunneling rate, the GaAsP drain pocket efficiently reduces ambipolarity in both Si and non-Si-TFETs. Furthermore, well-calibrated device simulation results show that the proposed GaAsP drain pocket TFET with optimized pocket length provides superior performance in terms of reduced ambipolarity compared to conventional TFETs and TFETs with other possible structural modifications at the channel/drain interface using GaAsP. It is well known that both ambipolar behavior and capacitance values play a critical role for the successful operation of TFET-based high-speed logic circuits. Therefore, the impact of the GaAsP drain pocket on capacitance and intrinsic time delay is also critically evaluated.