Pub Date : 2026-01-08DOI: 10.1007/s10825-025-02487-z
Narinderjit Singh Sawaran Singh, G. Padma Priya, Subhashree Ray, Amrita Pal, Renu Sharma, Sardor Sabirov, L. Safarove, M. Diab, H. Amin El Saban, Mohammed Al-Farouni, Mumtaj Shah
In recent decades, there has been significant interest in finding negative electrode materials that offer excellent reversibility, low open circuit voltages, high specific capacity, and rapid charge–discharge rates. This inclusive innovation study examines the suitability of a T-BN monolayer as negative electrode material for Na-ion batteries (SIBs) applying first-principles computations. The impressive flexibility of T-BN enables it to exhibit strong reversibility when faced with volume expansion resulting from full adsorption. Furthermore, when Na is adsorbed onto the T-BN monolayer, the layer exhibits metallic characteristics, highlighting an exceptional electrical conductivity. Moreover, the T-BN monolayer exhibits a combination of features including a suitable average open-circuit voltage (OCV, 0.26 V), remarkable specific capacity (839.51 mA h g−1), low diffusion energy barrier (37 eV), and minimal change in lattice constants (2.78%). With these outstanding characteristics in mind, we anticipate that T-BN has promise to serve as a favorable negative electrode material for SIBs.
近几十年来,人们对寻找具有优异可逆性、低开路电压、高比容量和快速充放电率的负极材料非常感兴趣。这项包容性创新研究考察了T-BN单层作为钠离子电池(sib)负极材料的适用性,应用第一性原理计算。T-BN令人印象深刻的灵活性使其在面对完全吸附引起的体积膨胀时表现出很强的可逆性。此外,当Na被吸附到T-BN单层时,该层表现出金属特征,突出了优异的导电性。此外,T-BN单层具有合适的平均开路电压(OCV, 0.26 V)、显著的比容量(839.51 mA h g−1)、低扩散能垒(37 eV)和最小的晶格常数变化(2.78%)等特点。考虑到这些突出的特性,我们预计T-BN有望作为sib的良好负极材料。
{"title":"Sodium metal-ion batteries based on the T-BN monolayer anode: density functional theory study","authors":"Narinderjit Singh Sawaran Singh, G. Padma Priya, Subhashree Ray, Amrita Pal, Renu Sharma, Sardor Sabirov, L. Safarove, M. Diab, H. Amin El Saban, Mohammed Al-Farouni, Mumtaj Shah","doi":"10.1007/s10825-025-02487-z","DOIUrl":"10.1007/s10825-025-02487-z","url":null,"abstract":"<div><p>In recent decades, there has been significant interest in finding negative electrode materials that offer excellent reversibility, low open circuit voltages, high specific capacity, and rapid charge–discharge rates. This inclusive innovation study examines the suitability of a T-BN monolayer as negative electrode material for Na-ion batteries (SIBs) applying first-principles computations. The impressive flexibility of T-BN enables it to exhibit strong reversibility when faced with volume expansion resulting from full adsorption. Furthermore, when Na is adsorbed onto the T-BN monolayer, the layer exhibits metallic characteristics, highlighting an exceptional electrical conductivity. Moreover, the T-BN monolayer exhibits a combination of features including a suitable average open-circuit voltage (OCV, 0.26 V), remarkable specific capacity (839.51 mA h g<sup>−1</sup>), low diffusion energy barrier (37 eV), and minimal change in lattice constants (2.78%). With these outstanding characteristics in mind, we anticipate that T-BN has promise to serve as a favorable negative electrode material for SIBs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1007/s10825-025-02496-y
Yiming Xu, Chenxun Liu, Nan Chen, Xin Ding, Hui Chen, Fan Yang, Jianing Zhang, Leilei Gao, Yuxin Zhu
We present a compact in-fiber polarization beam splitter (PBS) implemented in a gold-coated dual-core photonic crystal fiber (DC-PCF), using finite element method (FEM). The octagonally arranged DC-PCF achieves enhanced birefringence through optimized structural design. Gold layers integrated within the two large air holes induce surface plasmon resonance (SPR), which modulates the optical response at the edges of the operational band and enhances polarization splitting efficiency. Numerical analysis shows that when the lattice gap Λ = 1.6 μm, diameters d1 = 1.2 μm, d2 = 0.5 μm, d3 = 2.1 μm, d4 = 0.7 μm, and a gold layer thickness of t = 50 nm, this PBS achieves a coupling length ratio (CLR) of 0.5 at 1.55 μm. It exhibits a shortest splitting length of 220 μm and a maximum extinction ratio (ER) of -133 dB over an operating bandwidth of 140 nm. The fabrication process and experimental setup are analyzed. It is worth anticipating that this polarizer will emerge as a crucial signal processing component in photonic integrated systems, driving the continuous advancement of communication systems and information technology.
{"title":"Numerical simulation of a compact in-fiber polarization beam splitter using gold layers deposited octagonal dual-core photonic crystal fiber","authors":"Yiming Xu, Chenxun Liu, Nan Chen, Xin Ding, Hui Chen, Fan Yang, Jianing Zhang, Leilei Gao, Yuxin Zhu","doi":"10.1007/s10825-025-02496-y","DOIUrl":"10.1007/s10825-025-02496-y","url":null,"abstract":"<div><p>We present a compact in-fiber polarization beam splitter (PBS) implemented in a gold-coated dual-core photonic crystal fiber (DC-PCF), using finite element method (FEM). The octagonally arranged DC-PCF achieves enhanced birefringence through optimized structural design. Gold layers integrated within the two large air holes induce surface plasmon resonance (SPR), which modulates the optical response at the edges of the operational band and enhances polarization splitting efficiency. Numerical analysis shows that when the lattice gap <i>Λ</i> = 1.6 μm, diameters <i>d</i><sub><i>1</i></sub> = 1.2 μm,<i> d</i><sub><i>2</i></sub> = 0.5 μm, <i>d</i><sub><i>3</i></sub> = 2.1 μm, <i>d</i><sub><i>4</i></sub> = 0.7 μm, and a gold layer thickness of <i>t</i> = 50 nm, this PBS achieves a coupling length ratio (CLR) of 0.5 at 1.55 μm. It exhibits a shortest splitting length of 220 μm and a maximum extinction ratio (ER) of -133 dB over an operating bandwidth of 140 nm. The fabrication process and experimental setup are analyzed. It is worth anticipating that this polarizer will emerge as a crucial signal processing component in photonic integrated systems, driving the continuous advancement of communication systems and information technology.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1007/s10825-025-02492-2
R. Ouchen, T. Berghout, F. Djeffal
In this work, an interpretable hybrid modeling framework is developed that integrates physics-based TCAD simulations, compact Verilog-A implementation, and graph neural network (GNN) analysis to investigate nanoscale Junctionless Gate-All-Around (JLGAA) FETs for ultra-low-power current mirror circuits. The proposed multi-scale methodology couples Silvaco TCAD data with a calibrated Verilog-A compact model, enabling accurate and efficient circuit-level evaluation in the Cadence Spectre environment. The compact model reproduces TCAD characteristics with less than 2.5% deviation, while achieving a > 1000 × reduction in simulation time compared with full 3-D TCAD analysis. An interpretable GNN-based deep learning framework predicts circuit performance metrics, including current accuracy, output resistance, and power consumption, with a mean absolute error below 4% across 900 simulation cases. SHapley Additive exPlanations (SHAP) reveal that channel doping and gate length dominate current matching and energy efficiency. The proposed hybrid TCAD–Verilog-A–GNN methodology provides a transparent, accurate, and computationally efficient pathway for the design and optimization of next-generation ultra-low-power nanoelectronic circuits.
{"title":"Interpretable graph neural network framework for ultra-low-power junctionless GAA FET current mirrors: bridging physics-based modeling and circuit design","authors":"R. Ouchen, T. Berghout, F. Djeffal","doi":"10.1007/s10825-025-02492-2","DOIUrl":"10.1007/s10825-025-02492-2","url":null,"abstract":"<div><p>In this work, an interpretable hybrid modeling framework is developed that integrates physics-based TCAD simulations, compact Verilog-A implementation, and graph neural network (GNN) analysis to investigate nanoscale Junctionless Gate-All-Around (JLGAA) FETs for ultra-low-power current mirror circuits. The proposed multi-scale methodology couples Silvaco TCAD data with a calibrated Verilog-A compact model, enabling accurate and efficient circuit-level evaluation in the Cadence Spectre environment. The compact model reproduces TCAD characteristics with less than 2.5% deviation, while achieving a > 1000 × reduction in simulation time compared with full 3-D TCAD analysis. An interpretable GNN-based deep learning framework predicts circuit performance metrics, including current accuracy, output resistance, and power consumption, with a mean absolute error below 4% across 900 simulation cases. SHapley Additive exPlanations (SHAP) reveal that channel doping and gate length dominate current matching and energy efficiency. The proposed hybrid TCAD–Verilog-A–GNN methodology provides a transparent, accurate, and computationally efficient pathway for the design and optimization of next-generation ultra-low-power nanoelectronic circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1007/s10825-025-02494-0
Fatma Zohra Imene Yeddou, Mohamed Ali Benmensour, Anissa Amar
This study aims to enhance the performance of dithienosilole-based non-fullerene acceptors (NFAs) for organic solar cells (OSCs) through strategic end-capped modifications. Eleven novel NFAs (D1–D11) were theoretically designed by substituting the cyano groups of the reference molecule (BCNDTS, R) with various electron-withdrawing units. Their optoelectronic and photophysical properties were systematically investigated using density functional theory (DFT) and time-dependent DFT (TD-DFT) at the PBE1PBE/6-31G(d) level. Among all the scrutinized structures, D10 showed the most remarkable outcomes, such as the lowest band gap (Eg = 1.96 eV), the greatest electron affinity (EA = 3.35 eV), the highest λmax (773 nm in gaseous and 836 nm in dichloromethane), and the lowest excitation energy (Ex = 1.60 eV in gaseous and 1.48 eV in dichloromethane). D9 also exhibited considerable enhancements in different aspects, such as a planar structure, the highest light harvesting efficiency (LHE = 0.990), and a narrow bandgap (Eg = 2.04 eV). The electron donor molecule PTB7TH was used to calculate the open-circuit voltage (Voc) of the model molecule and D1–D11. It was found that end-capped tailoring has a significant effect on the open-circuit voltage. In order to assess the charge transfer ability of the designed acceptors, we presented the HOMO and LUMO orbitals of the complex D9-PTB7Th. It was found out that all the tailored compounds, particularly D10 and D9, could be advantageous in the manufacturing of advanced NFAs for next-generation photovoltaic technologies especially D10 and D9.