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Neural network implementation for smart medical systems with double-gate MOSFET 双栅MOSFET智能医疗系统的神经网络实现
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-31 DOI: 10.1007/s10825-024-02246-6
Epiphany Jebamalar Leavline, Krishnasamy Vijayakanth

The implementation of a neural network on very large-scale integrated (VLSI) circuits provides flexibility in programmable systems. However, conventional field-programmable gate array (FPGA) neural chips suffer from longer computation times, higher costs, and greater energy consumption. On the other hand, multilayer perceptron (MLP) network implementation over VLSI exhibits increased speed with a smaller chip size and reduced cost. This work aims to implement an MLP neural network using double-gate metal oxide semiconductor field effect transistors (DGMOSFETs) functioning as neurons. The suggested network architecture is offered as a package utilizing very high-speed integrated circuit hardware description language (VHDL). The weights of the MLP are obtained by training a neural network with electrocardiogram (ECG) signals taken from the PhysioNet database. The ECG input signals, obtained weights and bias, are given to the designed MLP for testing. The classification accuracy of this trained neural network is 94.48%. A power analysis is also conducted for the hardware-designed MLP to validate the power reduction performance. In terms of speed, the required number of components and power, the performance of this design employing DGMOSFET outperforms its single-gate MOSFET (SGMOSFET) counterpart.

神经网络在大规模集成电路(VLSI)上的实现为可编程系统提供了灵活性。然而,传统的现场可编程门阵列(FPGA)神经芯片存在计算时间长、成本高和能耗大的问题。另一方面,在VLSI上实现多层感知器(MLP)网络显示出更快的速度,更小的芯片尺寸和更低的成本。本研究旨在利用双栅金属氧化物半导体场效应晶体管(dgmosfet)作为神经元来实现MLP神经网络。建议的网络架构是作为一个利用高速集成电路硬件描述语言(VHDL)的包提供的。MLP的权值是通过训练一个神经网络获得的,该神经网络使用的是取自PhysioNet数据库的心电图信号。将心电输入信号,得到权值和偏置,交给设计的MLP进行测试。该神经网络的分类准确率为94.48%。对硬件设计的MLP进行了功耗分析,以验证其降功耗性能。在速度、所需的元件数量和功率方面,本设计采用DGMOSFET的性能优于其单门MOSFET (SGMOSFET)。
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引用次数: 0
Investigating the effect of structural modifications on the performance of transistors based on black phosphorene nanoribbons 研究结构修饰对黑磷纳米带晶体管性能的影响
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-30 DOI: 10.1007/s10825-024-02268-0
Akbar Shabani, Hossein Karamitaheri

The modern electronic devices’ development heavily relies on the miniaturization of MOSFET transistors. On the other hand, reduction in transistor sizes will face significant challenges, like short-channel effects. To enhance transistor performance, it is essential to explore and utilize new materials. Black phosphorene has emerged as a promising material for constructing transistors and other electronic components. Accurate modeling is crucial for predicting the behavior of future nanoscale transistors. One of proposed simulation methods is the top-of-barrier model. This study analyzes transistors based on black phosphorene nanoribbons. The electronic structure of these nanoribbons is calculated using the tight-binding method with up to five nearest neighbors. The top-of-barrier computational approach within the Landauer framework is employed to determine device characteristics. Initial evaluations of a structure without antidots show that creating an off-center antidot increases the on current to 4.98 mA. The threshold voltage also rises by 0.2 V, indicating an increase in the energy band gap, which reduces the off current significantly. The on/off current ratio can be improved by up to 2500 times with an optimal antidot design. Non-central antidots do not significantly affect the threshold voltage or off current.

现代电子器件的发展在很大程度上依赖于MOSFET晶体管的小型化。另一方面,缩小晶体管尺寸将面临重大挑战,如短通道效应。为了提高晶体管的性能,必须探索和利用新材料。黑磷烯已成为制造晶体管和其他电子元件的有前途的材料。准确的模型对于预测未来奈米电晶体的行为至关重要。所提出的仿真方法之一是障顶模型。本研究分析了基于黑色磷纳米带的晶体管。这些纳米带的电子结构使用紧密结合的方法计算最多五个近邻。采用兰道尔框架内的障顶计算方法来确定器件特性。对无反点结构的初步评估表明,产生偏离中心的反点可使导通电流增加到4.98 mA。阈值电压也上升了0.2 V,表明带隙增大,这大大降低了关断电流。通过优化的反点设计,通/关电流比可提高2500倍。非中心反点不会显著影响阈值电压或关断电流。
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引用次数: 0
Neurobiological transition of magnetized and demagnetized dynamism for fractional Hindmarsh–Rose neuron model via fractal numerical simulations 分形数值模拟分数阶Hindmarsh-Rose神经元模型磁化与退磁动态的神经生物学转换
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-30 DOI: 10.1007/s10825-024-02243-9
Kashif Ali Abro, Imran Qasim Memon, Khidir Shaib Mohamed, Khaled Aldwoah

This manuscript investigates how magnetic and non-magnetic effects influence the firing patterns, oscillations, and synchronization properties of the Hindmarsh–Rose neuron model under different magnetic conditions. The development of a fractal–fractional Hindmarsh–Rose neuron model is proposed for investigating self-similarity across different scales to analyze and understand the complexities when extreme magnetic flux varies and reaches its critical value. The mathematical modeling of the Hindmarsh–Rose neuron model is established under an application of the Caputo–Fabrizio and Atangana–Baleanu fractional differential operators. For the sake of numerical simulations via the Adams–Bashforth–Moulton method, the discretization of spatial and time domains on fractal–fractional derivatives is employed to generate numerically powerful schemes within approximate accuracy. For understanding the brain function and neural oscillations, the magnetized and demagnetized Hindmarsh–Rose neuron model revealed suppressed neuronal activity and the effects of transcranial magnetic stimulation. Our results suggested two aspects: one is trapping of neurons, striking phenomena and firing patterns under demagnetization, while the other is neurological disorders, spiking and bursting in neurons based on neural interfaces under demagnetization.

本文研究了磁和非磁效应如何影响Hindmarsh-Rose神经元模型在不同磁条件下的放电模式、振荡和同步特性。提出了一种分形-分数形Hindmarsh-Rose神经元模型,用于研究不同尺度上的自相似性,以分析和理解极端磁通量变化并达到临界值时的复杂性。应用Caputo-Fabrizio和Atangana-Baleanu分数阶微分算子,建立了Hindmarsh-Rose神经元模型的数学模型。为了通过Adams-Bashforth-Moulton方法进行数值模拟,在分形-分数阶导数上采用了空间和时间域的离散化,在近似精度范围内生成了数值上强大的格式。为了了解脑功能和神经振荡,磁化和退磁的Hindmarsh-Rose神经元模型揭示了经颅磁刺激抑制神经元活动和影响。我们的研究结果揭示了两个方面的问题:一是退磁作用下神经元的捕获、撞击现象和放电模式;二是退磁作用下基于神经界面的神经元的突峰和破裂等神经紊乱。
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引用次数: 0
Implications of side contact depth on the Schottky barrier of 2D field-effect transistors 二维场效应晶体管侧接触深度对肖特基势垒的影响
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-30 DOI: 10.1007/s10825-024-02262-6
L. Panarella, Q. Smets, D. Verreck, B. Kaczer, S. Tyaginov, C. Lockhart de la Rosa, G. S. Kar, V. Afanas’ev

The performance of 2D material-based field-effect transistors (2D FETs) is significantly influenced by the vertical extension, or depth, of electrostatically doped side Schottky contacts, which is determined through etching. This study employs TCAD modeling to compare back-gated FETs with varying source/drain contact depths and channel lengths. Results indicate that deeper side contacts hinder electric field crowding at the metal/channel interface, resulting in wider Schottky barriers, diminished carrier tunneling, and reduced on-state current. In contrast, introducing a low-k dielectric beneath the source and drain yields the opposite effect. Therefore, in the development of industry-compatible 2D FETs, the depth and design of side contacts must be carefully optimized, as they are critical factors in achieving low-contact resistance devices.

二维材料场效应晶体管(2D fet)的性能受到静电掺杂侧肖特基触点的垂直延伸或深度的显著影响,这是通过蚀刻确定的。本研究采用TCAD建模来比较具有不同源极/漏极接触深度和通道长度的背控场效应管。结果表明,更深的侧触点阻碍了金属/通道界面处的电场拥挤,导致更宽的肖特基势垒,减少载流子隧穿,降低导通电流。相反,在源极和漏极下面引入低k介电体会产生相反的效果。因此,在开发工业兼容的2D fet时,必须仔细优化侧触点的深度和设计,因为它们是实现低接触电阻器件的关键因素。
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引用次数: 0
Impact of geometrical parameters on AlGaN/GaN heterostructure MOS-HEMT biosensor 几何参数对AlGaN/GaN异质结构MOS-HEMT生物传感器的影响
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-24 DOI: 10.1007/s10825-024-02247-5
Abdellah Bouguenna, Driss Bouguenna, Amine Boudghene Stambouli, Aasif Mohammad Bhat

In this work, we present the study of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT) biosensors for protein detection. We study the effects of technological parameters including the gate width, gate length, AlGaN layer thickness, oxide thickness layer, and oxide type including HfO2, Al2O3, and SiO2 on the output characteristics, sensitivity of the MOS-HEMT biosensors, and CV characteristics. The model developed is compared with experimental data to verify its validity. The AlGaN/GaN bio-MOS-HEMTs show the greatest change in drain current of 208.08 mA with Wg = 100 µm, Lg= 0.3 µm, dAlGaN=15 nm, and SiO2 oxide thickness of 25 nm at protein permittivity of 2.5.

在这项工作中,我们提出了用于蛋白质检测的AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)生物传感器的研究。研究了栅极宽度、栅极长度、AlGaN层厚度、氧化物层厚度、氧化物类型(HfO2、Al2O3和SiO2)等工艺参数对MOS-HEMT生物传感器输出特性、灵敏度和C-V特性的影响。将所建立的模型与实验数据进行了比较,验证了模型的有效性。在蛋白质介电常数为2.5时,当Wg = 100µm, Lg= 0.3µm, dAlGaN=15 nm, SiO2厚度为25 nm时,GaN/ AlGaN - mos - hemts的漏极电流变化最大,为208.08 mA。
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引用次数: 0
Unraveling the resonant frequency of H-shaped microstrip antennas using a deep learning approach 利用深度学习方法解开h形微带天线的谐振频率
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-24 DOI: 10.1007/s10825-024-02270-6
Akram Bediaf, Sami Bedra, Djemai Arar, Mohamed Bedra

This paper introduces a novel physics-informed learning approach that combines principles from physics with deep learning techniques to optimize the simulation process of microstrip antennas. These deep learning-based approaches are preferable because traditional full-wave models used in antenna design are computationally intensive and require significant memory due to their reliance on iterative algorithms, leading to exponential increases in resource demands as input parameters grow. In contrast, the proposed deep learning method requires significant computational resources only during training, with a constant time complexity of O(1) during deployment. This results in much faster modeling, allowing a broader range of antenna configurations to be processed more quickly, thereby improving the efficiency of the design workflow. Unlike conventional deep learning methods that rely solely on data, our approach leverages the underlying physical laws governing antenna behavior, particularly beneficial when labeled data is scarce or difficult to obtain. We propose a bias observational physics-informed learning technique by integrating physical laws into the loss function, which includes two components: Neuron Loss, the standard MSE measuring prediction accuracy against actual data, and Physics Loss, which penalizes deviations from physical laws as represented by a cavity model. The total loss combines these two, with higher physics loss indicating poorer alignment with physical principles and lower physics loss suggesting better adherence to them. This approach refines predictions by balancing data fidelity with physical constraint, wherein the dataset is sourced from simulations and real-world measurements. This strategy ensures model uncertainty and broad generalization capabilities. Computational efficiency is a key consideration, with our approach implemented on low-specification hardware, emphasizing optimal resource and power consumption. The H-shaped microstrip antennas (HMAs), known for its wide and dual-band properties, serves as the target antenna for our study. We employ three sequential models’ recurrent neural networks (RNN), long short-term memory (LSTM), and gated recurrent unit (GRU)—integrated with a cavity model-driven resonance frequency representation to maintain the resonance mode TM10 at prediction. Comparative analysis of these models encompasses execution time, prediction convergence, loss reduction, prediction score (R2), as well as memory and CPU usage. This research contributes four main sections elucidating the methodology, experimental setup, and results analysis, underscoring the efficacy of our deep learning approach in antenna optimization.

本文介绍了一种新的基于物理的学习方法,该方法将物理学原理与深度学习技术相结合,以优化微带天线的仿真过程。这些基于深度学习的方法更可取,因为天线设计中使用的传统全波模型计算密集,并且由于依赖迭代算法而需要大量内存,导致资源需求随着输入参数的增长呈指数增长。相比之下,本文提出的深度学习方法仅在训练期间需要大量的计算资源,部署期间的时间复杂度为O(1)。这导致更快的建模,允许更广泛的天线配置更快地处理,从而提高设计工作流程的效率。与仅依赖数据的传统深度学习方法不同,我们的方法利用了控制天线行为的潜在物理定律,在标记数据稀缺或难以获得时尤其有益。我们提出了一种偏差观测物理信息学习技术,通过将物理定律集成到损失函数中,该函数包括两个部分:神经元损失(Neuron loss)和物理损失(Physics loss),前者是衡量实际数据预测精度的标准MSE,后者是对由空腔模型表示的偏离物理定律的惩罚。总损耗结合了这两者,较高的物理损耗表明较不符合物理原则,较低的物理损耗表明较遵守物理原则。这种方法通过平衡数据保真度和物理约束来改进预测,其中数据集来自模拟和现实世界的测量。该策略确保了模型的不确定性和广泛的泛化能力。计算效率是一个关键的考虑因素,我们的方法在低规格硬件上实现,强调最优的资源和功耗。h型微带天线(HMAs)以其宽双频特性而闻名,是我们研究的目标天线。我们采用三种序列模型:递归神经网络(RNN)、长短期记忆(LSTM)和门控递归单元(GRU),并结合腔模型驱动的共振频率表示来维持预测时的共振模式TM10。这些模型的比较分析包括执行时间、预测收敛、减少损失、预测分数(R2)以及内存和CPU使用情况。本研究分为四个主要部分,阐述了方法、实验设置和结果分析,强调了我们的深度学习方法在天线优化中的有效性。
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引用次数: 0
Shallow donor impurity states in wurtzite InGaN/GaN coupled quantum wells under built-in electric field, hydrostatic pressure, and strain effects 内置电场、静水压力和应变作用下纤锌矿InGaN/GaN耦合量子阱中的浅层给体杂质态
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-18 DOI: 10.1007/s10825-024-02238-6
Guang-Xin Wang, Xiu-Zhi Duan

In this paper, we investigated theoretically the hydrogenic donor impurity states in strained wurtzite (In,Ga)N-GaN coupled quantum wells (CQWs). The variational approach is employed to obtain the dependence on built-in electric field (BEF), hydrostatic pressure, indium composition, and structure size of the binding energy of hydrogenic donor impurity (BEHDI). The results reveal that hydrostatic pressure and structure size of the CQWs have a great influence on BEF which affects strongly the BEHDI. With the increment in hydrostatic pressure, the BEF strength of well and barrier layers enhances monotonously. However, by increasing the well width (barrier width), the BEF strength of well layer reduces (enhances) gradually, and that of barrier layers enhances (reduces). Meantime, it reveals that the binding energy (1) enhances linearly as the hydrostatic pressure is increased, (2) is more sensitive to geometrical parameters (width of well and/or barrier), and (3) demonstrates a maximum value as an impurity ion is shifted from one side of the CQWs to the other.

本文从理论上研究了应变纤锌矿(In,Ga)N-GaN耦合量子阱(CQWs)中氢给体杂质态。采用变分方法得到了内建电场(BEF)、静水压力、铟成分和结构尺寸对含氢给体杂质(BEHDI)结合能的依赖关系。结果表明,静水压力和结构尺寸对射流流场有较大影响,对射流流场有较大影响。随着静水压力的增大,井、障壁层的流场强度单调增大。但随着井宽(势垒宽度)的增大,井层BEF强度逐渐减小(增大),势垒层BEF强度逐渐增大(减小)。同时,结果表明,结合能(1)随着静水压力的增加而线性增加,(2)对几何参数(井和/或势垒宽度)更敏感,(3)当杂质离子从CQWs的一侧转移到另一侧时,结合能达到最大值。
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引用次数: 0
Dual- and triple-absorber solar cell architecture achieves significant efficiency improvements 双吸收器和三吸收器太阳能电池结构显著提高了效率
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-18 DOI: 10.1007/s10825-024-02271-5
M. T. Islam, Mukaddar Shaikh, Atul Kumar

Perovskite solar cells (PSCs) are improving in efficiency, but their stability remains a challenge compared to other solar technologies due to the use of hybrid organic–inorganic materials. To overcome this, researchers have shifted focus from methylammonium-based PSCs to more stable cesium (Cs)-based PSCs. By optimizing multi-layer structures to enhance solar spectrum absorption, substantial performance improvements are possible. In this study, we explored single (CsPbIBr2), dual (CsPbIBr2/KSnI3), and triple (CsPbIBr2/KSnI3/MASnBr3) absorber layer designs. The optimization of bilayer and triple-layer PSCs takes into account various factors, such as absorber layer thickness, defect density, and interface defect density for each PSC type. Finally, using the optimal triple-absorber layer combination, we optimized the electron transport layer, hole transport layer, series resistance, and shunt resistance. In this research, we attained impressive efficiencies of 34.22% for the triple-layer solar cell, 20.41% for the bilayer solar cell, and 7.32% for the single-junction PSC. This design approach led to an optimal configuration that showed substantial improvements over the experimental benchmark, including a 7.08% increase in open circuit voltage, a 256.9% increase in short circuit current, a 22.32% increase in fill factor, and a 367.5% increase in efficiency. By meticulously aligning multiple absorber layers in perovskite solar cells, we can unlock new pathways to developing highly efficient solar cells for the future.

钙钛矿太阳能电池(PSCs)的效率正在提高,但由于使用了有机-无机混合材料,与其他太阳能技术相比,它们的稳定性仍然是一个挑战。为了克服这一点,研究人员已经将重点从基于甲基铵的psc转移到更稳定的基于铯(Cs)的psc。通过优化多层结构来增强太阳光谱吸收,可以大幅提高性能。在这项研究中,我们探索了单(CsPbIBr2),双(CsPbIBr2/KSnI3)和三重(CsPbIBr2/KSnI3/MASnBr3)吸收层设计。双层和三层PSC的优化考虑了各种因素,如吸收层厚度、缺陷密度和每种PSC的界面缺陷密度。最后,采用最优的三吸收层组合,对电子输运层、空穴输运层、串联电阻和分流电阻进行了优化。在这项研究中,我们获得了令人印象深刻的三层太阳能电池效率34.22%,双层太阳能电池效率20.41%,单结PSC效率7.32%。这种设计方法导致了一个优化配置,显示出比实验基准有实质性的改进,包括开路电压增加7.08%,短路电流增加256.9%,填充因子增加22.32%,效率提高367.5%。通过精心排列钙钛矿太阳能电池中的多个吸收层,我们可以为未来开发高效太阳能电池开辟新的途径。
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引用次数: 0
PCF-based multi-analyte refractive index sensor for pathogen detection in water 基于pcf的多分析物折射率传感器用于水中病原体检测
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-18 DOI: 10.1007/s10825-024-02239-5
Mahia Rukhsana Deepti, Md. Aslam Mollah

A photonic crystal fiber (PCF)-based multi-analyte refractive index sensor is introduced in this study for the detection of four waterborne pathogens: Vibrio cholerae, Bacillus anthracis, Escherichia coli, and Enterococcus faecalis. The sensor comprises a tri-core structure with hexagonal rings encased in a silica substrate. Two selective holes are infused with water samples, enabling concurrent detection of two analytes. The sensor integrates liquid-silica mode coupling as its sensing mechanism. The couplings are precisely estimated and numerically evaluated using a finite-element method (FEM)-based simulation tool. The optimization of the sensor’s structural characteristics resulted in wavelength sensitivity of 6386 nm/RIU, 7104 nm/RIU, 8510 nm/RIU, and 3409 nm/RIU for sample pairs of V. cholerae–pure water, V. choleraeV. cholerae, V. choleraeB. anthracis, and E. coliV. cholerae, respectively. Furthermore, the sensor exhibits the highest wavelength resolution of (text {1.59} times text {10}^{-5}) RIU and figure of merit of 142 (text {RIU}^{-1}) and is also assessed for detection limit, detection accuracy, and signal-to-noise ratio. Featuring a straightforward design and remarkable sensing capabilities, the proposed sensor is anticipated to be exceptionally effective at detecting waterborne pathogens, with potential to excel in identifying chemicals, biomedical substances, and other diverse analytes.

本文介绍了一种基于光子晶体光纤(PCF)的多分析物折射率传感器,用于检测霍乱弧菌、炭疽芽孢杆菌、大肠杆菌和粪肠球菌等4种水媒病原体。该传感器包括三芯结构,其六角形环包裹在二氧化硅衬底中。两个选择性孔注入水样,使两种分析物同时检测。该传感器集成了液-硅模式耦合作为其传感机构。利用基于有限元法的仿真工具对耦合进行了精确估计和数值评估。优化后的传感器对霍乱弧菌-纯水、霍乱弧菌- v样品对的波长灵敏度分别为6386 nm/RIU、7104 nm/RIU、8510 nm/RIU和3409 nm/RIU。霍乱弧菌;炭疽杆菌和大肠杆菌。分别是霍乱。此外,该传感器具有(text {1.59} times text {10}^{-5}) RIU的最高波长分辨率和142 (text {RIU}^{-1})的优值,并对检测限、检测精度和信噪比进行了评估。该传感器具有简单的设计和卓越的传感能力,预计在检测水传播病原体方面非常有效,在识别化学物质、生物医学物质和其他不同分析物方面具有潜力。
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引用次数: 0
Current and voltage characteristics of a thermoelectric couple 热电偶的电流和电压特性
IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-18 DOI: 10.1007/s10825-024-02267-1
Tinggang Zhang

Formulations to determine the electric field and the electrostatic potentials in a thermoelectric couple through solving the Poisson’s equation are introduced in this work. Analytical approximations of the auxiliary energies introduced in the author’s earlier work in the relaxation time approximation of the Boltzmann transport equation are developed based on the coupled equations of heat and electric current. These auxiliary energies are used in the Poisson’s equation at each temperature node along the thermoelectric leg to obtain a set of algebraic equations with the electric field and the electrostatic potentials as unknowns. The algebraic equations are then solved using the derived algorithm and the boundary conditions determined by the continuity and the carrier concentration equations.

本文介绍了通过求解泊松方程来确定热电偶中的电场和静电势的公式。本文在热电耦合方程的基础上,对玻尔兹曼输运方程的弛豫时间近似中引入的辅助能量进行了解析近似。将这些辅助能量用于沿热电腿各温度节点的泊松方程中,得到电场和静电势为未知数的一组代数方程。然后利用导出的算法和由连续性方程和载流子浓度方程确定的边界条件求解代数方程。
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引用次数: 0
期刊
Journal of Computational Electronics
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