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Exploring the NLO potential of new designed thieno[2,3-b]indole-based derivatives via donor group modification: a DFT study on static and frequency-dependent NLO properties 通过给基修饰探索新设计的噻吩[2,3-b]吲哚衍生物的NLO潜力:静态和频率相关NLO性质的DFT研究
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-10 DOI: 10.1007/s10825-025-02486-0
Muhammad Khalid, Mashal Khan, Khansa Gull, Maham Mubarak, Muhammad Nadeem Arshad, Muhammad Imran

Several D–π–A compounds (CTFM1-CTFM7) were developed to evaluate their linear and nonlinear optical (NLO) properties. A thieno[2,3-b]indole-based chromophore (CTFM) was selected to design new derivatives by incorporating various electron-donating (D) groups. The designed compounds consisted of dithieno[3,2-b:2′,3′-d]thiophene as the π-spacer and 2-(3-cyano-4-methyl-5-phenyl-5-(trifluoromethyl)furan-2(5-H)-ylidene)malononitrile as the acceptor unit along with a range of strong donors. Density functional theory (DFT) and time-dependent DFT (TD-DFT) were employed to investigate their geometrical and optoelectronic properties utilizing the conductor-like polarizable continuum model (CPCM) to simulate solvent effects in the chloroform medium. Additionally, their optical properties were investigated by calculating the excitation energies and simulating the UV-Visible spectra at the B3LYP/6-311G(d,p) level. The outcomes showed significantly reduced Egap values (1.801–3.228 eV) and bathochromic shifts (551.408–709.901 nm) in the designed chromophores. Particularly, CTFM6 exhibited the least Egap (1.801 eV) and highest absorption wavelength (709.901 nm) was noted for CTFM7. Further, the hyper-conjugation and intramolecular interactions were visualized using the natural bond orbitals (NBOs) analysis. The NLO properties showed prominent results for CTFM7 compound i.e., < α >  = 1.77 × 10−22 esu, βtotal = 3.33 × 10−27 esu and γtotal = 3.06 × 10−32 esu. Similarly, frequency-dependent electro-optic Pockels effect (EOPE) i.e., β(− ω,ω,0) and electro-optic Kerr effect (EOKO) i.e., γ(− ω,ω,0,0) also showed the highest values for CTFM7 as 6.25 × 10−25 and 5.51 × 10−30 esu, respectively. Overall, the designed chromophores demonstrated significant NLO characteristics validating their potential as promising candidates for the optoelectronic applications.

制备了几种D -π-A化合物(CTFM1-CTFM7),评价了它们的线性和非线性光学性质。选择噻吩[2,3-b]吲哚基发色团(CTFM)通过加入各种给电子(D)基团来设计新的衍生物。所设计的化合物由二噻吩[3,2-b:2 ',3 ' -d]噻吩为π间隔,2-(3-氰基-4-甲基-5-苯基-5-(三氟甲基)呋喃-2(5-H)-乙基)丙二腈为受体单元以及一系列强给体组成。利用类导体极化连续介质模型(CPCM)模拟氯仿介质中的溶剂效应,采用密度泛函理论(DFT)和时变DFT (TD-DFT)研究了它们的几何和光电子特性。此外,通过计算激发能和模拟B3LYP/6-311G(d,p)能级的紫外-可见光谱,研究了它们的光学性质。结果表明,在所设计的发色团中Egap值(1.801 ~ 3.228 eV)和色移(551.408 ~ 709.901 nm)显著降低。其中,CTFM6的Egap最小(1.801 eV), CTFM7的吸收波长最高(709.901 nm)。此外,利用自然键轨道(NBOs)分析可视化了超共轭和分子内相互作用。CTFM7化合物的NLO性质显著,α > = 1.77 × 10−22 esu, βtotal = 3.33 × 10−27 esu, γtotal = 3.06 × 10−32 esu。同样,频率相关的电光波克尔斯效应(EOPE)即β(−ω,ω,0)和电光克尔效应(EOKO)即γ(−ω,ω,0,0)在CTFM7中也显示出最高值,分别为6.25 × 10−25和5.51 × 10−30 esu。总的来说,设计的发色团表现出显著的NLO特性,验证了它们作为光电应用的有希望的候选者的潜力。
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引用次数: 0
Digital and analog/RF performance of stacked nanosheet transistors with various source/drain contact and bottom isolation designs 采用各种源极/漏极触点和底部隔离设计的堆叠纳米片晶体管的数字和模拟/射频性能
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-10 DOI: 10.1007/s10825-025-02484-2
Mohamed Saleh, Amr M. Bayoumi, Hamdy Abdelhamid

We present a study of the digital and analog/RF performances of nanosheet field-effect transistors (NSFETs) for different source–drain (S/D) and bottom isolation configurations. The bottom isolation techniques evaluated include the punch-through stopper (PTS) and bottom dielectric isolation (BDI). Regarding S/D contact methodologies, three configurations were examined: top, wrapped-around (WAC), and metal sidewall (MSW). The combination of bottom isolation techniques and S/D configurations led to eight device variants. For each structural variation, the parasitic components are extracted, and the circuit performance is evaluated. For each structure, the digital circuit performance is evaluated by investigating the delay of a CMOS inverter. The RF performance was also assessed by investigating the cutoff frequency (Ft), the maximum frequency of oscillation (F), and the RF parameters for each structure considering the back-end of line (BEOL) parasitics. The BDI scheme demonstrated improved performance over the conventional PTS by an average of 5% and 9% for digital and RF applications, respectively. Combining BDI with MSW and WAC schemes significantly enhances the performance. For instance, the maximum performance gain over conventional PTS and top-contact schemes was 32% for digital applications, while Ft improved by 8% and F improved by 13%. MSW outperformed WAC by an average of 2%.

我们研究了纳米片场效应晶体管(nsfet)在不同源漏(S/D)和底部隔离配置下的数字和模拟/射频性能。评估的底部隔离技术包括穿孔器(PTS)和底部介质隔离(BDI)。关于S/D接触方法,研究了三种配置:顶部、环绕式(WAC)和金属侧壁(MSW)。底部隔离技术和S/D配置的结合导致了8种设备变体。对于每一种结构变化,提取了寄生分量,并对电路性能进行了评估。对于每种结构,通过研究CMOS逆变器的延迟来评估数字电路的性能。通过考察截止频率(Ft)、最大振荡频率(F)以及考虑到线后端(BEOL)寄生的每种结构的射频参数,还评估了射频性能。在数字和射频应用中,BDI方案的性能分别比传统PTS平均提高了5%和9%。将BDI与MSW和WAC方案相结合可以显著提高性能。例如,在数字应用中,与传统PTS和顶触点方案相比,最大性能增益为32%,而Ft提高了8%,F提高了13%。城市固体废物的表现比WAC平均高出2%。
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引用次数: 0
Comparative analysis of periodic and quasi-periodic 1D photonic crystals for blood-based biosensing 用于血液生物传感的周期和准周期一维光子晶体的比较分析
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-09 DOI: 10.1007/s10825-025-02497-x
Sumitra Dewal, Bhuvneshwer Suthar, Vijent Bhojak

We present a comparative investigation of one-dimensional photonic crystal (1D PC) and quasi-periodic photonic crystal (1D QPC) structures—specifically Fibonacci and Thue-Morse sequences—for biosensing applications using various blood components as defect layers. The transmission spectra for platelets, plasma, white blood cells (WBC), and hemoglobin (HB) were investigated for both healthy and infected states. The study highlights a distinct resonance wavelength shift in each structure corresponding to changes in refractive index, enabling the detection of health conditions. Among the three configurations, the Fibonacci-based 1D QPC exhibited the best sensing performance, with the highest sensitivity and figure of merit (FOM). For instance, it achieved a FOM of 220.17 /RIU for platelets, 275.25 /RIU for plasma, 266.77 /RIU for WBCs, and 232.42 /RIU for HB—significantly outperforming in case of the Fibonacci sequence structure. The Thue-Morse structure showed moderate improvements over the periodic case, but the Fibonacci design delivered the sharpest resonance modes and clearest distinction between healthy and infected samples. These results demonstrate the potential of quasi-periodic Fibonacci photonic structures for highly sensitive, label-free biosensing applications in medical diagnostics.

我们提出了一维光子晶体(1D PC)和准周期光子晶体(1D QPC)结构的比较研究-特别是斐波那契和Thue-Morse序列-用于使用各种血液成分作为缺陷层的生物传感应用。研究了健康和感染状态下血小板、血浆、白细胞(WBC)和血红蛋白(HB)的透射光谱。该研究强调了每个结构中对应于折射率变化的独特共振波长移动,从而能够检测健康状况。在三种构型中,基于fibonacci的1D QPC具有最高的灵敏度和最优值(FOM),具有最佳的传感性能。例如,它对血小板的FOM为220.17 /RIU,对血浆的FOM为275.25 /RIU,对白细胞的FOM为266.77 /RIU,对hb的FOM为232.42 /RIU——在斐波那契序列结构的情况下,FOM明显优于Fibonacci序列结构。tue - morse结构在周期性情况下表现出适度的改善,但斐波那契设计提供了最强烈的共振模式,并且在健康和感染样本之间有最明显的区别。这些结果证明了准周期斐波那契光子结构在医学诊断中的高灵敏度、无标记生物传感应用的潜力。
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引用次数: 0
Dominant-mode analysis using cylindrical wave impedance of resonating nanowires 共振纳米线柱面波阻抗的主模分析
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-09 DOI: 10.1007/s10825-025-02479-z
Adnan Shafi, Ahsan Irshad, Muhammad Umar Khan, Mehboob Alam, Syed Hassan Mujtaba Jafri

The precise control of electromagnetic wave behavior is essential for the development of next-generation photonic and communication devices. Metamaterials enable advanced wave manipulation through their unique electromagnetic properties. Among their key building blocks, metallic nanowires have been designed to dilute plasma frequency, a concept validated at microwave frequencies. Existing nanowire models face limitations; the quasi-static voltage-current models apply only to dipole-dominant nanoparticles, while wave impedance methods require infinite series expansion. These constraints highlight the need for a computationally efficient and physically intuitive modeling approach. This work introduces a cylindrical wave impedance framework at optical frequencies, deriving impedance expressions that simplify the dominant-mode resonance analysis under TE polarization by mapping it to a linear circuit model. The dominant mode is validated through simulations and Mie theory comparisons, ensuring accuracy. The proposed compact and intuitive model enhances understanding of wave-nanowire interactions, aiding the design of plasmonic and metamaterial-based applications. It also opens new avenues for the analytical treatment of complex nanostructures in both research and practical device engineering.

电磁波行为的精确控制对下一代光子和通信器件的发展至关重要。超材料通过其独特的电磁特性使高级波操纵成为可能。在他们的关键组成部分中,金属纳米线被设计用来稀释等离子体频率,这一概念在微波频率上得到了验证。现有的纳米线模型面临局限性;准静态电压电流模型仅适用于偶极子优势纳米粒子,而波阻抗方法需要无限级数展开。这些限制突出了对计算效率高和物理上直观的建模方法的需求。本工作介绍了光学频率下的圆柱形波阻抗框架,推导了通过将其映射到线性电路模型来简化TE极化下的主模共振分析的阻抗表达式。通过仿真和Mie理论比较验证了优势模式,保证了精度。所提出的紧凑和直观的模型增强了对波与纳米线相互作用的理解,有助于等离子体和超材料应用的设计。它也为复杂纳米结构在研究和实际设备工程中的分析处理开辟了新的途径。
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引用次数: 0
Sodium metal-ion batteries based on the T-BN monolayer anode: density functional theory study 基于T-BN单层阳极的金属钠离子电池:密度泛函理论研究
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-08 DOI: 10.1007/s10825-025-02487-z
Narinderjit Singh Sawaran Singh, G. Padma Priya, Subhashree Ray, Amrita Pal, Renu Sharma, Sardor Sabirov, L. Safarove, M. Diab, H. Amin El Saban, Mohammed Al-Farouni, Mumtaj Shah

In recent decades, there has been significant interest in finding negative electrode materials that offer excellent reversibility, low open circuit voltages, high specific capacity, and rapid charge–discharge rates. This inclusive innovation study examines the suitability of a T-BN monolayer as negative electrode material for Na-ion batteries (SIBs) applying first-principles computations. The impressive flexibility of T-BN enables it to exhibit strong reversibility when faced with volume expansion resulting from full adsorption. Furthermore, when Na is adsorbed onto the T-BN monolayer, the layer exhibits metallic characteristics, highlighting an exceptional electrical conductivity. Moreover, the T-BN monolayer exhibits a combination of features including a suitable average open-circuit voltage (OCV, 0.26 V), remarkable specific capacity (839.51 mA h g−1), low diffusion energy barrier (37 eV), and minimal change in lattice constants (2.78%). With these outstanding characteristics in mind, we anticipate that T-BN has promise to serve as a favorable negative electrode material for SIBs.

近几十年来,人们对寻找具有优异可逆性、低开路电压、高比容量和快速充放电率的负极材料非常感兴趣。这项包容性创新研究考察了T-BN单层作为钠离子电池(sib)负极材料的适用性,应用第一性原理计算。T-BN令人印象深刻的灵活性使其在面对完全吸附引起的体积膨胀时表现出很强的可逆性。此外,当Na被吸附到T-BN单层时,该层表现出金属特征,突出了优异的导电性。此外,T-BN单层具有合适的平均开路电压(OCV, 0.26 V)、显著的比容量(839.51 mA h g−1)、低扩散能垒(37 eV)和最小的晶格常数变化(2.78%)等特点。考虑到这些突出的特性,我们预计T-BN有望作为sib的良好负极材料。
{"title":"Sodium metal-ion batteries based on the T-BN monolayer anode: density functional theory study","authors":"Narinderjit Singh Sawaran Singh,&nbsp;G. Padma Priya,&nbsp;Subhashree Ray,&nbsp;Amrita Pal,&nbsp;Renu Sharma,&nbsp;Sardor Sabirov,&nbsp;L. Safarove,&nbsp;M. Diab,&nbsp;H. Amin El Saban,&nbsp;Mohammed Al-Farouni,&nbsp;Mumtaj Shah","doi":"10.1007/s10825-025-02487-z","DOIUrl":"10.1007/s10825-025-02487-z","url":null,"abstract":"<div><p>In recent decades, there has been significant interest in finding negative electrode materials that offer excellent reversibility, low open circuit voltages, high specific capacity, and rapid charge–discharge rates. This inclusive innovation study examines the suitability of a T-BN monolayer as negative electrode material for Na-ion batteries (SIBs) applying first-principles computations. The impressive flexibility of T-BN enables it to exhibit strong reversibility when faced with volume expansion resulting from full adsorption. Furthermore, when Na is adsorbed onto the T-BN monolayer, the layer exhibits metallic characteristics, highlighting an exceptional electrical conductivity. Moreover, the T-BN monolayer exhibits a combination of features including a suitable average open-circuit voltage (OCV, 0.26 V), remarkable specific capacity (839.51 mA h g<sup>−1</sup>), low diffusion energy barrier (37 eV), and minimal change in lattice constants (2.78%). With these outstanding characteristics in mind, we anticipate that T-BN has promise to serve as a favorable negative electrode material for SIBs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulation of a compact in-fiber polarization beam splitter using gold layers deposited octagonal dual-core photonic crystal fiber 采用金层沉积的八角形双核光子晶体光纤的紧凑光纤内偏振分束器的数值模拟
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-07 DOI: 10.1007/s10825-025-02496-y
Yiming Xu, Chenxun Liu, Nan Chen, Xin Ding, Hui Chen, Fan Yang, Jianing Zhang, Leilei Gao, Yuxin Zhu

We present a compact in-fiber polarization beam splitter (PBS) implemented in a gold-coated dual-core photonic crystal fiber (DC-PCF), using finite element method (FEM). The octagonally arranged DC-PCF achieves enhanced birefringence through optimized structural design. Gold layers integrated within the two large air holes induce surface plasmon resonance (SPR), which modulates the optical response at the edges of the operational band and enhances polarization splitting efficiency. Numerical analysis shows that when the lattice gap Λ = 1.6 μm, diameters d1 = 1.2 μm, d2 = 0.5 μm, d3 = 2.1 μm, d4 = 0.7 μm, and a gold layer thickness of t = 50 nm, this PBS achieves a coupling length ratio (CLR) of 0.5 at 1.55 μm. It exhibits a shortest splitting length of 220 μm and a maximum extinction ratio (ER) of -133 dB over an operating bandwidth of 140 nm. The fabrication process and experimental setup are analyzed. It is worth anticipating that this polarizer will emerge as a crucial signal processing component in photonic integrated systems, driving the continuous advancement of communication systems and information technology.

我们提出了一种紧凑的光纤内偏振分束器(PBS),实现在金涂层双芯光子晶体光纤(DC-PCF)中,使用有限元方法(FEM)。通过优化结构设计,八角形排列的DC-PCF实现了增强的双折射。集成在两个大空穴内的金层诱导表面等离子体共振(SPR),调制了操作带边缘的光学响应,提高了偏振分裂效率。数值分析表明,当晶格间隙Λ = 1.6 μm,直径d1 = 1.2 μm, d2 = 0.5 μm, d3 = 2.1 μm, d4 = 0.7 μm,金层厚度t = 50 nm时,该PBS在1.55 μm处的耦合长度比(CLR)为0.5。在工作带宽为140 nm的情况下,其分裂长度最短为220 μm,最大消光比(ER)为-133 dB。分析了其制作工艺和实验设置。值得期待的是,该偏振器将成为光子集成系统中至关重要的信号处理部件,推动通信系统和信息技术的不断进步。
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引用次数: 0
Interpretable graph neural network framework for ultra-low-power junctionless GAA FET current mirrors: bridging physics-based modeling and circuit design 超低功耗无结GAA场效应晶体管电流镜的可解释图神经网络框架:桥接物理建模和电路设计
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-07 DOI: 10.1007/s10825-025-02492-2
R. Ouchen, T. Berghout, F. Djeffal

In this work, an interpretable hybrid modeling framework is developed that integrates physics-based TCAD simulations, compact Verilog-A implementation, and graph neural network (GNN) analysis to investigate nanoscale Junctionless Gate-All-Around (JLGAA) FETs for ultra-low-power current mirror circuits. The proposed multi-scale methodology couples Silvaco TCAD data with a calibrated Verilog-A compact model, enabling accurate and efficient circuit-level evaluation in the Cadence Spectre environment. The compact model reproduces TCAD characteristics with less than 2.5% deviation, while achieving a > 1000 × reduction in simulation time compared with full 3-D TCAD analysis. An interpretable GNN-based deep learning framework predicts circuit performance metrics, including current accuracy, output resistance, and power consumption, with a mean absolute error below 4% across 900 simulation cases. SHapley Additive exPlanations (SHAP) reveal that channel doping and gate length dominate current matching and energy efficiency. The proposed hybrid TCAD–Verilog-A–GNN methodology provides a transparent, accurate, and computationally efficient pathway for the design and optimization of next-generation ultra-low-power nanoelectronic circuits.

在这项工作中,开发了一个可解释的混合建模框架,该框架集成了基于物理的TCAD仿真、紧凑的Verilog-A实现和图神经网络(GNN)分析,以研究用于超低功耗电流镜像电路的纳米级无结门-全方位(JLGAA)场效应管。提出的多尺度方法将Silvaco TCAD数据与经过校准的Verilog-A紧凑模型相结合,从而在Cadence Spectre环境中实现准确高效的电路级评估。紧凑模型以小于2.5%的偏差再现了TCAD特征,与全三维TCAD分析相比,仿真时间减少了1000倍。可解释的基于gnn的深度学习框架预测电路性能指标,包括电流精度、输出电阻和功耗,在900个模拟案例中,平均绝对误差低于4%。SHapley加性解释(SHAP)揭示了通道掺杂和栅极长度对电流匹配和能量效率的影响。提出的混合TCAD-Verilog-A-GNN方法为下一代超低功耗纳米电子电路的设计和优化提供了透明、准确和计算效率高的途径。
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引用次数: 0
Rational design of dithienosilole-based small-molecule acceptors via end-capped group modification to enhance the optoelectronic properties of photovoltaic cells: a density functional theory study 通过端盖基团修饰合理设计二噻吩硅基小分子受体以提高光伏电池的光电性能:密度泛函理论研究
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-07 DOI: 10.1007/s10825-025-02494-0
Fatma Zohra Imene Yeddou, Mohamed Ali Benmensour, Anissa Amar

This study aims to enhance the performance of dithienosilole-based non-fullerene acceptors (NFAs) for organic solar cells (OSCs) through strategic end-capped modifications. Eleven novel NFAs (D1–D11) were theoretically designed by substituting the cyano groups of the reference molecule (BCNDTS, R) with various electron-withdrawing units. Their optoelectronic and photophysical properties were systematically investigated using density functional theory (DFT) and time-dependent DFT (TD-DFT) at the PBE1PBE/6-31G(d) level. Among all the scrutinized structures, D10 showed the most remarkable outcomes, such as the lowest band gap (Eg = 1.96 eV), the greatest electron affinity (EA = 3.35 eV), the highest λmax (773 nm in gaseous and 836 nm in dichloromethane), and the lowest excitation energy (Ex = 1.60 eV in gaseous and 1.48 eV in dichloromethane). D9 also exhibited considerable enhancements in different aspects, such as a planar structure, the highest light harvesting efficiency (LHE = 0.990), and a narrow bandgap (Eg = 2.04 eV). The electron donor molecule PTB7TH was used to calculate the open-circuit voltage (Voc) of the model molecule and D1–D11. It was found that end-capped tailoring has a significant effect on the open-circuit voltage. In order to assess the charge transfer ability of the designed acceptors, we presented the HOMO and LUMO orbitals of the complex D9-PTB7Th. It was found out that all the tailored compounds, particularly D10 and D9, could be advantageous in the manufacturing of advanced NFAs for next-generation photovoltaic technologies especially D10 and D9.

Graphical abstract

本研究旨在通过战略性的末端修饰来提高有机太阳能电池(OSCs)中基于二噻吩硅酮的非富勒烯受体(nfa)的性能。用不同的吸电子单元取代参考分子(BCNDTS, R)的氰基,从理论上设计了11个新的nfa (D1-D11)。在PBE1PBE/6-31G(d)水平上,利用密度泛函理论(DFT)和时变DFT (TD-DFT)系统地研究了它们的光电和光物理性质。D10具有最小带隙(Eg = 1.96 eV)、最大电子亲和力(EA = 3.35 eV)、最大λmax(气态为773 nm,二氯甲烷为836 nm)和最低激发能(气态为1.60 eV,二氯甲烷为1.48 eV)。D9在平面结构、最高的光收集效率(LHE = 0.990)和窄的带隙(Eg = 2.04 eV)等方面也有明显的增强。利用电子给体分子ptb7计算模型分子和D1-D11的开路电压(Voc)。结果表明,端盖裁剪对开路电压有显著影响。为了评估所设计受体的电荷转移能力,我们给出了配合物d9 - ptb7的HOMO和LUMO轨道。结果表明,所有定制的化合物,特别是D10和D9,在制造下一代光伏技术(特别是D10和D9)的先进nfa方面具有优势。图形抽象
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引用次数: 0
Computation of the face index of certain graphene nanostructures 某些石墨烯纳米结构表面指数的计算
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-06 DOI: 10.1007/s10825-025-02495-z
Jai Parkash, Sunny Kumar Sharma, Vijay Kumar Bhat

Graphene nanostructures (GNSs) exhibit unique electronic and magnetic properties dependent on their shape and size. This research investigates the face index, a topological descriptor derived from chemical graph theory, as a means to characterize the structural topology of three distinct regular convex polygons: triangles, hexagonal, and rhombus-shaped GNSs, which are the most simple high-symmetry convex structures that can be ideally cut out of a graphene layer. We calculate the face index for these three geometries using graph theoretical methods. The results offer quantitative insights into the structure of these nanomaterials and provide a valuable contribution toward understanding structure–property relationships in graphene-based systems.

石墨烯纳米结构(GNSs)表现出独特的电子和磁性,这取决于它们的形状和大小。本研究研究了面指数,一种源自化学图论的拓扑描述符,作为表征三种不同规则凸多边形的结构拓扑的手段:三角形,六边形和菱形GNSs,这是最简单的高对称凸结构,可以理想地从石墨烯层中切割出来。我们用图论方法计算了这三种几何图形的面指数。这些结果为这些纳米材料的结构提供了定量的见解,并为理解石墨烯基系统的结构-性能关系提供了有价值的贡献。
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引用次数: 0
Tunable electronic structure and optical properties of the photodetector based on the vertical TeSe2/GaSe van der Waals heterostructure 基于垂直TeSe2/GaSe范德华异质结构的光电探测器的可调谐电子结构和光学性质
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-06 DOI: 10.1007/s10825-025-02483-3
Xiuwen Wu, Yange Peng, Shengzhao Yang, Qirui Yu, Zheng Zhang, Wenhu Liao, Hairui Bao

The electronic structure and optical properties of the photodetector based on the vertical TeSe2/GaSe van der Waals heterostructure (vdWH) have been investigated by way of the first-principles calculations. The obtained results indicate that the dynamically stable TeSe2/GaSe vdWH exhibits an indirect band gap of 0.63 eV and a type-I band alignment. A semiconductor-to-metal transition can be realized when the compressive strain exceeds − 4.4%, and the band alignment of the system should transform from type-I to type-II at the regime of 1.1% to 3.7% in-plane biaxial tensile strain. Compared to the TeSe2 and GaSe monolayers, the TeSe2/GaSe vdWH photodetector exhibits maximum absorption coefficient of ~ 25% in the visible range. The maximum photocurrent of the proposed TeSe2/GaSe vdWH photodetector reaches 0.97 ({text{a}}_{0}^{2}/text{photon}) at the photon energy of 1.8 eV while the extinction ratio achieves a maximum value of 33.2 at the photon energy of 2.0 eV. The proposed photodetector from the vertical TeSe2/GaSe vdWH may shed some light on the realization of high-performance photodetector applications.

用第一性原理计算方法研究了基于垂直TeSe2/GaSe范德华异质结构(vdWH)的光电探测器的电子结构和光学性质。结果表明,动态稳定的TeSe2/GaSe vdWH具有0.63 eV的间接带隙和i型带对准。当压缩应变超过- 4.4时,可以实现半导体到金属的转变%, and the band alignment of the system should transform from type-I to type-II at the regime of 1.1% to 3.7% in-plane biaxial tensile strain. Compared to the TeSe2 and GaSe monolayers, the TeSe2/GaSe vdWH photodetector exhibits maximum absorption coefficient of ~ 25% in the visible range. The maximum photocurrent of the proposed TeSe2/GaSe vdWH photodetector reaches 0.97 ({text{a}}_{0}^{2}/text{photon}) at the photon energy of 1.8 eV while the extinction ratio achieves a maximum value of 33.2 at the photon energy of 2.0 eV. The proposed photodetector from the vertical TeSe2/GaSe vdWH may shed some light on the realization of high-performance photodetector applications.
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Journal of Computational Electronics
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