Pub Date : 2025-10-30DOI: 10.1007/s10825-025-02448-6
Thijs Ullrick, Dirk Deschrijver, Domenico Spina, Wim Bogaerts, Tom Dhaene
This paper introduces a SPICE-compatible photonic–electronic co-simulation framework based on the complex vector fitting (CVF) algorithm, developed for accurate representation of multi-wavelength behavior in linear and passive photonic integrated circuits (PICs). The proposed wavelength-tunable equivalent circuit models feature a fixed network topology, yet comprise components whose values are parameterized with respect to the optical carrier frequency. This enables both frequency- and time-domain simulations at arbitrary wavelengths, making the framework particularly suited for modeling multi-wavelength photonic systems. To support intricate co-simulation with electronic subsystems, a novel interface circuit is introduced, allowing seamless interconnection with third-party active and passive SPICE models. The capability of the framework to capture complex photonic–electronic interactions is demonstrated through three application examples, highlighting its effectiveness for co-simulating photonic devices with control and receiver electronics.
{"title":"Wavelength-tunable equivalent circuit models for SPICE-based photonic–electronic co-simulation","authors":"Thijs Ullrick, Dirk Deschrijver, Domenico Spina, Wim Bogaerts, Tom Dhaene","doi":"10.1007/s10825-025-02448-6","DOIUrl":"10.1007/s10825-025-02448-6","url":null,"abstract":"<div><p>This paper introduces a SPICE-compatible photonic–electronic co-simulation framework based on the complex vector fitting (CVF) algorithm, developed for accurate representation of multi-wavelength behavior in linear and passive photonic integrated circuits (PICs). The proposed wavelength-tunable equivalent circuit models feature a fixed network topology, yet comprise components whose values are parameterized with respect to the optical carrier frequency. This enables both frequency- and time-domain simulations at arbitrary wavelengths, making the framework particularly suited for modeling multi-wavelength photonic systems. To support intricate co-simulation with electronic subsystems, a novel interface circuit is introduced, allowing seamless interconnection with third-party active and passive SPICE models. The capability of the framework to capture complex photonic–electronic interactions is demonstrated through three application examples, highlighting its effectiveness for co-simulating photonic devices with control and receiver electronics.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145406395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a novel GaAs/AlGaAs-based Quantum Well Photodetector (QWP) for Terahertz (THz) detection. The photodetector is optimized to operate in the 3.9–4.6 THz frequency range, with peak performance at 4.3 THz (69.7 µm). The performance of the QWP is analyzed in terms of quantum efficiency, responsivity, dark current, and capture probability in the high-frequency terahertz region using simulation tools MATLAB and TCAD. The optimized structure corresponds to a quantum well width of Lw = 180 Å and an aluminum mole fraction of x = 0.019, yield a high responsivity of 0.31 A/W, a low dark current of 0.99 mA, and a nearly constant capture probability 0.351 in the 3.9–4.6 THz range. These optimized values lead to enhanced wavelength detection sensitivity of the device, which arises from improved carrier transport, higher electrical conductivity, and stronger photoconductive gain. The simulation results are consistent with previously reported experimental studies, confirming the validity of the proposed model. The developed QWP demonstrates promising potential for next-generation terahertz applications, including 6G wireless and satellite communication systems. A key novelty of this work lies in the optimized GaAs/AlGaAs quantum well parameters, which improve responsivity, and quantum efficiency and reduce dark current for THz detection. Notably, the capture probability's slope remains negative and decreasing with quantum well width and exhibiting a low constant value between 3.9–4.6 THz. This observation is believed to enhance the electrical conductivity of the detector and hence, its gain increases. This study presents a novel observation and is being reported for the first time. The developed model is a strong contender for high-speed free-space optical and wireless communications.
{"title":"Modeling and simulation of a GaAs/AlGaAs quantum well photodetector for terahertz application","authors":"Mahendra Kumar Das, Vimal Kumar Singh Yadav, Rajesh Kumar Lal","doi":"10.1007/s10825-025-02444-w","DOIUrl":"10.1007/s10825-025-02444-w","url":null,"abstract":"<div><p>This paper presents a novel GaAs/AlGaAs-based Quantum Well Photodetector (QWP) for Terahertz (THz) detection. The photodetector is optimized to operate in the 3.9–4.6 THz frequency range, with peak performance at 4.3 THz (69.7 µm). The performance of the QWP is analyzed in terms of quantum efficiency, responsivity, dark current, and capture probability in the high-frequency terahertz region using simulation tools MATLAB and TCAD. The optimized structure corresponds to a quantum well width of L<sub>w</sub> = 180 Å and an aluminum mole fraction of x = 0.019, yield a high responsivity of 0.31 A/W, a low dark current of 0.99 mA, and a nearly constant capture probability 0.351 in the 3.9–4.6 THz range. These optimized values lead to enhanced wavelength detection sensitivity of the device, which arises from improved carrier transport, higher electrical conductivity, and stronger photoconductive gain. The simulation results are consistent with previously reported experimental studies, confirming the validity of the proposed model. The developed QWP demonstrates promising potential for next-generation terahertz applications, including 6G wireless and satellite communication systems. A key novelty of this work lies in the optimized GaAs/AlGaAs quantum well parameters, which improve responsivity, and quantum efficiency and reduce dark current for THz detection. Notably, the capture probability's slope remains negative and decreasing with quantum well width and exhibiting a low constant value between 3.9–4.6 THz. This observation is believed to enhance the electrical conductivity of the detector and hence, its gain increases. This study presents a novel observation and is being reported for the first time. The developed model is a strong contender for high-speed free-space optical and wireless communications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 1","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-16DOI: 10.1007/s10825-025-02442-y
Berker Colak, Mertcan Oral, Mehmet Bakir, Fikret A. Teksen, Fatih O. Alkurt, Ahmet S. Koksal, Uğur C. Hasar, Lulu Wang, Olcay Altıntaş, Muharrem Karaaslan
This study presents a novel microwave absorber design based on the Aizawa chaotic system, with deep analysis through mathematical modeling, simulation, and experimental analysis. The chaotic dynamics are used to generate complex fractal patterns with broadband absorption potential, derived via numerical solutions and processed with the 2D Julia set algorithm. Advanced image processing techniques further refine these patterns with high precision. The optimized fractal pattern is then transferred into an electromagnetic simulation environment to assess its wideband absorption capabilities. The absorber is fabricated by printing a resistive ink pattern (0.04 mm thick) onto an RO3003 substrate (0.51 mm thick), chosen for its flexibility and balanced electromagnetic performance. An equivalent circuit model is also developed to evaluate resistive, inductive, and capacitive properties, it follows a parametric study on material optimization. Simulations demonstrate effective absorption across the 1.82–34 GHz range, and measurements in the 3–34 GHz range using horn antennas show strong harmony with the simulation results. Compared to similar designs, this absorber demonstrates superior broadband performance.
{"title":"Chaotic system based ultra-wideband microwave absorber designed by resistive ink modeling","authors":"Berker Colak, Mertcan Oral, Mehmet Bakir, Fikret A. Teksen, Fatih O. Alkurt, Ahmet S. Koksal, Uğur C. Hasar, Lulu Wang, Olcay Altıntaş, Muharrem Karaaslan","doi":"10.1007/s10825-025-02442-y","DOIUrl":"10.1007/s10825-025-02442-y","url":null,"abstract":"<div><p>This study presents a novel microwave absorber design based on the Aizawa chaotic system, with deep analysis through mathematical modeling, simulation, and experimental analysis. The chaotic dynamics are used to generate complex fractal patterns with broadband absorption potential, derived via numerical solutions and processed with the 2D Julia set algorithm. Advanced image processing techniques further refine these patterns with high precision. The optimized fractal pattern is then transferred into an electromagnetic simulation environment to assess its wideband absorption capabilities. The absorber is fabricated by printing a resistive ink pattern (0.04 mm thick) onto an RO3003 substrate (0.51 mm thick), chosen for its flexibility and balanced electromagnetic performance. An equivalent circuit model is also developed to evaluate resistive, inductive, and capacitive properties, it follows a parametric study on material optimization. Simulations demonstrate effective absorption across the 1.82–34 GHz range, and measurements in the 3–34 GHz range using horn antennas show strong harmony with the simulation results. Compared to similar designs, this absorber demonstrates superior broadband performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-16DOI: 10.1007/s10825-025-02446-8
Fariborz Parandin, Mitra Moayed
In this research, a new structure of the Feynman gate based on two-dimensional photonic crystals is designed and simulated. Our circuit is simpler and smaller because we have not included a ring resonator in its design. The optical propagation time is shortened by not using the resonator ring. Additionally, this structure has increased the speed of data transmission. We used linear and point defects based on the Feynman gate accuracy table while simulating the design. The gate has a working wavelength of 1550 nm, and zero and one are determined by the amount of light that reaches the outputs. These devices make designing processors with high speed and low power consumption possible. By removing the ring resonator from our simulation, we were able to include one of the significant design considerations for optical gates: achieving small dimensions.
{"title":"Design and simulation of an optical Feynman gate based on a 2D photonic crystal structure","authors":"Fariborz Parandin, Mitra Moayed","doi":"10.1007/s10825-025-02446-8","DOIUrl":"10.1007/s10825-025-02446-8","url":null,"abstract":"<div><p>In this research, a new structure of the Feynman gate based on two-dimensional photonic crystals is designed and simulated. Our circuit is simpler and smaller because we have not included a ring resonator in its design. The optical propagation time is shortened by not using the resonator ring. Additionally, this structure has increased the speed of data transmission. We used linear and point defects based on the Feynman gate accuracy table while simulating the design. The gate has a working wavelength of 1550 nm, and zero and one are determined by the amount of light that reaches the outputs. These devices make designing processors with high speed and low power consumption possible. By removing the ring resonator from our simulation, we were able to include one of the significant design considerations for optical gates: achieving small dimensions.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-14DOI: 10.1007/s10825-025-02439-7
Muhammad Tahir Hussain, Yaqoob Shah, Asim Mansha, Sarah Alharthi, Mohammed A. Amin, Syed Ali Raza Naqvi, Muhammad Ramzan Saeed Ashraf Janjua
Research on designing compounds with effective nonlinear optics responsiveness is fascinating. The present research examines how quinacridone can improve nonlinear optical characteristics in conjugated D-π-A and D-π-A-π-A systems based on ferrocene. Through an analysis of the photophysical behavior, theoretical calculations, and structural features, we uncover notable increases in higher-order hyperpolarizabilities (β, γ) and polarizability (α). New quinacridone-based (FR1-FR8) compounds are designed with the demand and uses of NLO materials in mind. The Nd:-YAG laser with a fundamental wavelength of 1064 nm is used to calculate the frequency-dependent NLO response of R (ferrocene as donor and cyanovinylene as acceptor with phenyl as π-spacer) compound. The theoretical calculation of the absorption maximum λmax of reference compound (R) was 389 nm, while the experimental calculation was 365 nm. The experimental calculation produced Eg = 2.76 eV, but the theoretical prediction of the energy gap of R was Eg = 2.98 eV. The theoretical and actual values of β frequency-dependent second-harmonic generation (SHG) for R were 1.46 × 10–30 esu and 10.49 × 10–30 esu, respectively. The CAM (Coulomb-attenuating method)-B3LYP functional with gen 6-311G (d,p)//cc-pVDZ basis set was utilized for additional theoretical investigation because the results were close to the experimental results. Every chemical from FR1 to FR6 was exhibiting an improved NLO response. Their β values increased from 208.92 × 10–30 to 6822.86 × 10–30 esu, while their energy gap Eg decreased from 2.38 to 1.40 eV. γ values were also computed to support the NLO response. With a maximum β = 6822.86 × 10–30 esu, FR7 was deemed the most appropriate material for NLO response out of all the designed derivatives. Thus, quinacridone has been used to improve nonlinear optical responses by stabilizing the electronic state and facilitating intramolecular charge transfer. Our results imply that novel materials with improved performance for optical applications can be designed by utilizing the synergistic impact of ferrocene and quinacridone.