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Highly sensitive Kretschmann configuration-based SPR biosensor employing Ag/Si/TiO2 heterostructure for early malaria detection 采用Ag/Si/TiO2异质结构的高灵敏度Kretschmann构型SPR生物传感器用于疟疾早期检测
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-05 DOI: 10.1007/s10825-025-02481-5
Deepak Garg, Ajeet Kumar

Malaria remains a major global health challenge, with millions of cases and significant mortality each year, particularly in tropical and subtropical regions. Conventional diagnostic techniques, such as microscopy and rapid diagnostic tests (RDTs), suffer from limitations including reagent instability and false negatives. This necessitates rapid and reliable diagnostic alternatives for effective management and control. Surface Plasmon Resonance (SPR) based biosensors are now widely recognised for detecting biomolecular interactions in real time, without the need for labelling. In this work, we present the design and numerical analysis of a high-performance Kretschmann-configured surface plasmon resonance-based sensor. The proposed structure incorporates silver (Ag) as a metal layer, silicon (Si) as a dielectric layer and ultrathin TiO2 as an additional dielectric layer to enhance optical response for medical diagnostics. The sensor is evaluated for the detection of malaria-infected red blood cells across different intraerythrocytic developmental stages. Performance metrics were analysed using the finite element method (FEM) in COMSOL Multiphysics and the transfer matrix method (TMM) in MATLAB environment. Optimization of thickness and layer configuration yielded sensitivity of 425 deg/RIU, 337.03 deg/RIU, and 302.70 deg/RIU for ring, trophozoite and schizont phases, respectively. Corresponding figure of merit (FoM) was calculated as 124.70 RIU−1, 109.03 RIU−1 and 101.95 RIU−1 with a maximum detection accuracy of 0.336 deg−1 for the schizont phase. Furthermore, a tolerance study was done to assess the robustness against minor fabrication errors. These results demonstrate the potential of the suggested SPR sensor, which utilises enhanced plasmonic responses to detect minimal refractive index variations, as a platform for early malaria diagnosis.

疟疾仍然是一项重大的全球卫生挑战,每年有数以百万计的病例,死亡率很高,特别是在热带和亚热带地区。传统的诊断技术,如显微镜和快速诊断试验(RDTs),存在试剂不稳定和假阴性等局限性。这就需要快速和可靠的诊断替代方案,以实现有效的管理和控制。基于表面等离子体共振(SPR)的生物传感器现在被广泛认为可以实时检测生物分子相互作用,而无需标记。在这项工作中,我们提出了一个高性能的表面等离子体共振传感器的设计和数值分析。所提出的结构采用银(Ag)作为金属层,硅(Si)作为介电层,超薄TiO2作为额外的介电层,以增强医疗诊断的光学响应。该传感器用于检测疟疾感染的红细胞在不同的红细胞发育阶段。在COMSOL Multiphysics环境下采用有限元法(FEM),在MATLAB环境下采用传递矩阵法(TMM)进行性能指标分析。对环相、滋养体相和分裂体相的灵敏度分别为425°/RIU、337.03°/RIU和302.70°/RIU。相应的优点值(FoM)分别为124.70 RIU−1,109.03 RIU−1和101.95 RIU−1,对分裂相的最大检测精度为0.336°−1。此外,还进行了一项公差研究,以评估对小制造误差的鲁棒性。这些结果证明了SPR传感器的潜力,它利用增强的等离子体响应来检测最小的折射率变化,作为早期疟疾诊断的平台。
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引用次数: 0
Enhancing accuracy and convergence in triple-diode photovoltaic parameter extraction 提高三二极管光伏参数提取的准确性和收敛性
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-05 DOI: 10.1007/s10825-025-02473-5
Mohamed Abdel-Basset, Reda Mohamed, Ibrahim Alrashdi, Mohamed Abouhawwash

Parameter extraction for the triple-diode photovoltaic (PV) model presents a complex, highly nonlinear optimization problem. It necessitates an optimization algorithm that has strong exploration and exploitation abilities to avoid getting stuck in local optima and to accurately determine the model’s parameters. Although various optimization methods have been used in the literature to address this problem, most of them produce poor results, show instability across different PV modules, have slow convergence, and/or require high computational costs. These limitations motivate us to introduce a new robust parameter identification technique called IGO, which can achieve more accurate results with fewer function evaluations. It is based on integrating the recently published growth optimizer (GO) with two new optimization strategies—the convergence improvement strategy and the ranking-based update strategy. The latter strategy steadily enhances the exploration operator throughout the optimization to prevent premature convergence to local optima. Simultaneously, it gradually boosts the exploitation operator in the late phases to accelerate convergence to the global optimum. The former strategy focuses on enhancing the exploitation operator during the optimization process to maximize convergence speed while strengthening the exploratory operator in late stages to mitigate the risk of settling in local optima. Integrating both strategies in the proposed IGO aims to balance exploration and exploitation throughout different phases of iteration, thereby preventing stagnation in local optima and encouraging rapid convergence toward the global optimum. The proposed IGO is tested on six popular PV modules and compared with several recently published optimizers using various statistical measures in addition to convergence speed to demonstrate its effectiveness and significance. The experimental results demonstrate that IGO outperforms all other methods in both parameter quality and convergence speed, confirming it as a reliable alternative for extracting the unknown triple-diode model parameters.

三二极管光伏模型的参数提取是一个复杂的、高度非线性的优化问题。为了避免陷入局部最优,准确确定模型参数,需要一种具有较强探索开发能力的优化算法。虽然文献中已经使用了各种优化方法来解决这个问题,但大多数方法的结果都很差,在不同的光伏模块之间表现出不稳定性,收敛速度慢,和/或需要很高的计算成本。这些限制促使我们引入一种新的鲁棒参数识别技术,称为IGO,它可以用更少的函数评估获得更准确的结果。该算法将最近发表的增长优化器(GO)与两种新的优化策略——收敛改进策略和基于排名的更新策略相结合。后一种策略在整个优化过程中稳定地增强了勘探算子,以防止过早收敛到局部最优。同时,在后期逐步加大开采算子的力度,加快收敛到全局最优。前一种策略侧重于在优化过程中加强开发算子,以最大限度地提高收敛速度;而在后期加强探索算子,以降低陷入局部最优的风险。将这两种策略整合到所提出的IGO中,目的是在迭代的不同阶段平衡探索和开发,从而防止停滞在局部最优,并鼓励快速收敛到全局最优。本文在六种流行的光伏组件上对IGO进行了测试,并使用各种统计指标和收敛速度与最近发表的几种优化器进行了比较,以证明其有效性和意义。实验结果表明,IGO在参数质量和收敛速度上都优于其他方法,是一种可靠的提取未知三二极管模型参数的方法。
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引用次数: 0
Real-time hemoglobin detection across blood groups using tamm resonance biosensor 利用tamm共振生物传感器实时检测不同血型的血红蛋白
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-05 DOI: 10.1007/s10825-025-02482-4
Samad Roshan Entezar

This study presents a real-time biosensor for hemoglobin concentration detection based on optical Tamm resonance in a one-dimensional photonic crystal platform. The sensor architecture, comprising a silver layer, a blood sample layer, and a periodic Si/SiO2 multilayer on a BK7 glass substrate, supports sharp resonance features due to Tamm state excitation at the metal–dielectric interface. Notably, the biosensor differentiates blood groups (A, B, and O) through distinct resonance wavelength shifts arising from their characteristic refractive index differences, enabling group-specific hemoglobin detection. The resonance dip initially appears at 751.1 nm and exhibits a pronounced redshift with increasing hemoglobin concentration, reaching up to 814.2 nm for 200 g/L in blood group O. Using the Transfer Matrix Method, the optical response is evaluated under both normal and oblique incidence for TE and TM polarizations. The biosensor demonstrates exceptional performance under TE-polarized oblique incidence, achieving a maximum sensitivity of 0.599 nm/(g/L), a figure of merit of 0.716 1/(g/L), and a detection limit as low as 0.069 g/L. The prism-free, planar configuration ensures a compact and cost-effective setup ideal for point-of-care diagnostics. Additionally, the device maintains high spectral resolution and stable operation across physiological temperature ranges, making it a robust platform for real-time clinical blood analysis.

本研究提出了一种基于光学塔姆共振的一维光子晶体平台实时血红蛋白浓度检测生物传感器。该传感器结构包括银层、血样层和BK7玻璃基板上的周期性Si/SiO2多层,由于金属-介电界面的Tamm状态激发,支持尖锐的共振特征。值得注意的是,该生物传感器通过不同的共振波长位移来区分血型(A、B和O),这些波长位移源于血型的特征折射率差异,从而实现了血型特异性血红蛋白检测。共振倾角最初出现在751.1 nm处,随着血红蛋白浓度的增加呈现出明显的红移,在o血型中,当血红蛋白浓度为200 g/L时,红移达到814.2 nm。使用传递矩阵法,在TE和TM偏振的正常和斜入射下评估光学响应。该生物传感器在te偏振斜入射下表现出优异的性能,最大灵敏度为0.599 nm/(g/L),优值为0.716 1/(g/L),检测限低至0.069 g/L。无棱镜,平面配置确保了一个紧凑和经济高效的设置理想的点护理诊断。此外,该设备在生理温度范围内保持高光谱分辨率和稳定运行,使其成为实时临床血液分析的强大平台。
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引用次数: 0
Integrated simulation and machine learning framework for high-performance lead-free RbGeI3 perovskite solar cells with WS2/CuI transport layers 具有WS2/CuI传输层的高性能无铅RbGeI3钙钛矿太阳能电池的集成仿真和机器学习框架
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-05 DOI: 10.1007/s10825-025-02476-2
Umar Farooq Ali, Qasim Ali, Asif Ali, Hussain Noor, Usama Sohail, Sabah Haider

The present work comprehensively investigates the design, optimization, and predictive modeling of a high-performance, lead-free RbGeI3-based perovskite solar cell employing WS₂ as the ETL and CuI as the HTL. Numerical simulations performed using SCAPS-1D were validated against theoretical efficiency limits and electrostatic consistency checks, confirming the model’s physical reliability. The device achieved an optimized η of 24.15%, with Voc = 1.1184 V, Jsc = 25.999 mA·cm−2, and FF = 83.09%, demonstrating excellent charge extraction and minimal recombination losses. Systematic parametric analyses revealed the critical influence of absorber doping, transport layer defect density, resistive losses (Rs/Rsh), absorber thickness (t-Abs), defect density (Nt), temperature, and solar irradiance on overall performance. Optimal operation was achieved for Nt = 1014 cm⁻3, where light absorption and carrier transport are well balanced. Furthermore, machine learning (ML) algorithms, including XGBoost, random forest, and gradient boosting, were employed to predict photovoltaic outputs with near-perfect accuracy (R2 ≈ 1.0). The XGBoost model successfully identified absorber defect density, series resistance, and illumination intensity as the most dominant performance-determining features. The results demonstrate that the synergistic combination of WS2/CuI transport layers and ML-guided optimization establishes a promising framework for stable, efficient, and eco-friendly RbGeI3-based PSCs, paving the way for next-generation lead-free photovoltaic technologies.

本文全面研究了以WS₂为ETL, CuI为HTL的高性能、无铅rbgei3基钙钛矿太阳能电池的设计、优化和预测建模。利用SCAPS-1D进行的数值模拟验证了理论效率限制和静电一致性检查,证实了模型的物理可靠性。该装置的优化η值为24.15%,Voc = 1.1184 V, Jsc = 25.999 mA·cm−2,FF = 83.09%,具有优异的电荷提取性能和最小的复合损失。系统参数分析表明,吸收剂掺杂、传输层缺陷密度、电阻损耗(Rs/Rsh)、吸收剂厚度(t-Abs)、缺陷密度(Nt)、温度和太阳辐照度对整体性能有重要影响。在Nt = 1014 cm(3)处,光吸收和载流子迁移达到了很好的平衡。此外,采用机器学习(ML)算法,包括XGBoost、随机森林和梯度增强,以接近完美的精度(R2≈1.0)预测光伏输出。XGBoost模型成功地识别出吸收剂缺陷密度、串联电阻和光照强度是最主要的性能决定特征。结果表明,WS2/CuI传输层和ml引导优化的协同组合为稳定、高效、环保的rbgei3基PSCs建立了一个有前景的框架,为下一代无铅光伏技术铺平了道路。
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引用次数: 0
Robust and Energy-Efficient Fault-Tolerant n x n Vedic Multiplier Design using quantum-dot cellular automata (QCA) 基于量子点元胞自动机(QCA)的稳健节能容错n × n Vedic乘法器设计
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-05 DOI: 10.1007/s10825-025-02478-0
R. Saranya, B. Paulchamy

Quantum cellular automata (QCAs) are a promising alternative to traditional CMOS technology due to their lower power consumption and ability to function at the nanoscale. However, challenges such as fault tolerance and energy efficiency remain, especially for arithmetic circuits like multipliers. The Vedic multiplier, known for its reduced computational complexity, presents a valuable opportunity to address these issues. By implementing fault-tolerant mechanisms within the QCA architecture, we aim to improve the reliability and performance of n x n multipliers in critical applications, such as cryptography, signal processing, and neural network accelerators. The proposed Vedic multiplier is designed using a hybrid of Urdhva Tiryakbhyam Sutra (vertical and crosswise technique) and error-correcting QCA gates to ensure fault tolerance. The design is implemented in a hierarchical manner, utilizing optimized QCA logic gates to form the partial product generation and summation stages. Error detection and correction techniques, such as cellular redundancy and parity-based correction, are embedded within the architecture to ensure resilience against cell misalignment and tunneling errors. Power consumption is minimized by optimizing the layout to reduce wire crossings and cell interactions. The energy efficiency and fault tolerance of the design are evaluated using QCADesigner. Simulation results demonstrate that the proposed Vedic multiplier achieves a 30% reduction in power consumption compared to conventional QCA multiplier designs. Fault tolerance is improved, with the system being able to detect and correct up to 95% of single-cell faults during operation. The delay is minimized by 20%, ensuring high-speed performance. Additionally, the energy dissipation per computation is found to be 8.5 aJ (attojoules), making the design highly energy efficient for nanoscale applications. The proposed Robust and Energy-Efficient Fault-Tolerant n x n Vedic Multiplier offers significant improvements in power efficiency and fault tolerance, making it ideal for next-generation QCA-based systems. The Vedic multiplier's inherent simplicity, combined with advanced error correction mechanisms, enables reliable and high-performance multiplication operations at the nanoscale. These results highlight the potential of QCA for applications requiring energy-efficient and fault-resilient computing systems, such as cryptography, machine learning, and low-power IoT devices.

量子元胞自动机(QCAs)具有较低的功耗和在纳米尺度上运行的能力,是传统CMOS技术的一个有前途的替代品。然而,诸如容错和能源效率等挑战仍然存在,特别是对于像乘法器这样的算术电路。吠陀乘数以其降低的计算复杂性而闻名,为解决这些问题提供了一个宝贵的机会。通过在QCA架构中实现容错机制,我们的目标是提高关键应用(如密码学、信号处理和神经网络加速器)中n × n乘法器的可靠性和性能。所提出的吠陀乘数是使用《乌达法》(纵向和横向技术)和纠错QCA门的混合设计的,以确保容错性。该设计以分层方式实现,利用优化的QCA逻辑门形成部分产品生成和求和阶段。错误检测和纠正技术,如蜂窝冗余和基于奇偶校验的纠正,被嵌入到体系结构中,以确保对蜂窝不对齐和隧道错误的弹性。通过优化布局以减少导线交叉和单元相互作用,将功耗降至最低。利用qcaddesigner对设计的能效和容错性进行了评价。仿真结果表明,与传统的QCA乘法器设计相比,所提出的吠陀乘法器的功耗降低了30%。容错性得到了提高,系统能够在运行过程中检测并纠正高达95%的单细胞故障。延迟减少20%,确保高速性能。此外,每次计算的能量耗散为8.5 aJ(阿焦耳),使得该设计在纳米级应用中具有很高的能效。所提出的稳健节能的n × n Vedic乘法器在功率效率和容错性方面有显着改进,使其成为下一代基于qca的系统的理想选择。吠陀乘数固有的简单性,加上先进的纠错机制,使可靠和高性能的纳米级乘法运算成为可能。这些结果突出了QCA在需要节能和故障弹性计算系统的应用中的潜力,例如密码学,机器学习和低功耗物联网设备。
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引用次数: 0
Broadband high-temperature metamaterial absorber and thermal emitter composed of fractal geometry 由分形几何结构组成的宽带高温超材料吸收体和热辐射体
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-04 DOI: 10.1007/s10825-025-02480-6
Khaled Aliqab, Ammar Armghan, Spyridon Nektatios Daskalakis, Meshari Alsharari

Fractal structures are natural patterns that repeat themselves. They have several unique features that make them ideal for solar energy absorption and sensing applications. In this study, we present a high-performance, polarization insensitive solar absorber comprises of a nickel (Ni)-made hash-shaped fractal geometry develop over a thin layer of gallium-doped zinc oxide (GZO) features a high absorption rate that covers the visible and near-infrared wavelengths of the spectrum. The results show that broadband aggregative absorptivity of 92% is attained between 380 nm and 3850 nm attributed to remarkable localized surface plasmon resonance (LSPR) induced by the periodic array of Ni nano-resonators and surface plasmon resonance (SPR) at the interface of GZO-SiO2 layers. Further, the absorptivity remains above 90% from 670 nm to 3850 nm over a bandwidth of 3180 nm. With the utility of high-temperature resilient materials in the developed metamaterial structure, it shows potential for the thermal applications; as the results indicate the maximum heat radiation efficiency is 92.88% at 1600 K. Aside from that, we provide insight into the broadband high solar light capturing characteristics of the proposed device with the support of surface current density and electric field distribution study at the selective wavelengths. Furthermore, the device’s parametric study revealed a minor impact on its absorptivity/emissivity characteristics while also suggesting its robustness, which could be useful in device manufacture process. The overall benefits of the proposed device show its potential for high-temperature solar energy harvesting applications and solar thermophotovoltaic (STPV) cells.

分形结构是自我重复的自然模式。它们有几个独特的特点,使它们成为太阳能吸收和传感应用的理想选择。在本研究中,我们提出了一种高性能、偏振不敏感的太阳能吸收器,该吸收器由镍(Ni)制成的散列形分形几何结构组成,覆盖在掺镓氧化锌(GZO)的薄层上,具有高吸收率,覆盖光谱的可见光和近红外波长。结果表明,在380 ~ 3850 nm之间,由于Ni纳米谐振器的周期性阵列和表面等离子体共振(SPR)在GZO-SiO2层的界面处引起了显著的局域表面等离子体共振(LSPR),使得GZO-SiO2层的宽带聚集吸收率达到92%。此外,在3180 nm的带宽范围内,从670 nm到3850 nm的吸收率保持在90%以上。随着高温弹性材料在发达的超材料结构中的应用,它显示出热应用的潜力;结果表明,在1600 K时,热辐射效率最高,达到92.88%。除此之外,我们还在选择波长的表面电流密度和电场分布研究的支持下,深入了解了所提出器件的宽带高太阳光捕获特性。此外,该器件的参数研究显示其吸收/发射率特性的影响较小,同时也表明其稳健性,这可能在器件制造过程中有用。该装置的整体优势显示了其在高温太阳能收集应用和太阳能热光伏(STPV)电池方面的潜力。
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引用次数: 0
Optimum design and finite element method simulation for a high-g in-plane silicon MEMS accelerometer 高加速度面内硅MEMS加速度计的优化设计与有限元仿真
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-27 DOI: 10.1007/s10825-025-02464-6
Zhanshe Guo, Zhipeng Song, Zhaojun Guo

An in-plane high-g microelectromechanical systems (MEMS) accelerometer is designed for ultra-large acceleration measurements. The proposed device is a piezoresistive MEMS accelerometer, in which piezoresistors are employed as signal transduction elements. Unlike conventional cantilever-beam-supported structures, the proof mass is supported by four suspended thin plates to enhance structural stiffness and reliability under high-g shock loading. The sensing structure is bonded to the substrate using bonding technology. The accelerometer adopts an in-plane sensing configuration, where the applied acceleration is perpendicular to the surface of the proof mass. This configuration effectively avoids large shear stresses at the bonding interface under extreme acceleration, thereby improving the mechanical robustness and service life of the device in high-g applications. Four piezoresistors are symmetrically fabricated at the roots of the suspended thin plates to convert structural deformation into resistance variations. The feasibility of the proposed design is validated through theoretical analysis and finite element method (FEM) simulations, and an optimal structural design is obtained. Simulation results indicate that the measurement range of the accelerometer can reach 100,000 g, while the overload resistance can reach 200,000 g. The optimized dimensions include a proof mass side length of 1000(mu m), suspended thin plates with a length of 600(mu m) and a width of 320(mu m), a structural thickness of 80(mu m), and a gap of 5(mu m)between the lower surface of the structure and the substrate. The results demonstrate that the proposed accelerometer is suitable for high-g acceleration measurement applications

设计了一种平面内高加速度微机电系统(MEMS)加速度计,用于超大加速度测量。所提出的器件是一种压阻式MEMS加速度计,其中压阻器被用作信号转导元件。与传统的悬臂梁支撑结构不同,证明质量由四个悬浮薄板支撑,以提高结构刚度和高g冲击载荷下的可靠性。传感结构采用键合技术与衬底键合。加速度计采用平面内传感配置,其中施加的加速度垂直于证明质量的表面。这种结构有效地避免了极端加速度下粘接界面处的大剪切应力,从而提高了器件在高g应用中的机械稳健性和使用寿命。在悬置薄板的根部对称地制作四个压敏电阻,将结构变形转化为电阻变化。通过理论分析和有限元仿真,验证了设计的可行性,得到了最优结构设计方案。仿真结果表明,加速度计的测量范围可达10万g,抗过载能力可达20万g。优化后的尺寸包括证明质量边长为1000 (mu m),悬薄板长度为600 (mu m),宽度为320 (mu m),结构厚度为80 (mu m),结构下表面与基板之间的间隙为5 (mu m)。结果表明,所设计的加速度计适用于高加速度测量应用
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引用次数: 0
Mathematical approach to photonic analysis of Ag-doped HfO₂ for antireflective and intermediate reflective applications in planar a-Si solar cells 平面a-Si太阳能电池中掺银HfO 2抗反射和中间反射光子分析的数学方法
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-24 DOI: 10.1007/s10825-025-02474-4
P. Uthayakumar, K. Kathiresan, M. Ismail Fathima, S. K. Logesh

We study (Ag:HfO₂), designed to act simultaneously as an antireflective coating (ARC) and an intermediate reflective layer (IRL) in planar amorphous silicon (a-Si) solar cells. The optical behavior is analyzed using Scilab-based simulations with the Transfer Matrix Method (TMM), enabling precise modeling of light propagation and interference within multilayer structures. Silver incorporation modifies the HfO₂ permittivity via free-carrier effects described by the Drude model, producing epsilon-near-zero (ENZ) conditions and regions with negative permittivity. These properties enhance light trapping and absorption by minimizing front surface reflection and boosting internal reflection at the rear interface. The proposed planar approach improves optical absorption and internal quantum efficiency (IQE) without requiring complex nanostructures, offering a scalable, fabrication-compatible strategy for high-efficiency thin-film solar cells.

我们研究了在平面非晶硅(a-Si)太阳能电池中同时作为抗反射涂层(ARC)和中间反射层(IRL)的(Ag:HfO₂)。利用基于scilab的传输矩阵法(TMM)模拟分析了光学行为,实现了多层结构内光传播和干涉的精确建模。通过Drude模型描述的自由载流子效应,银的掺入改变了HfO₂的介电常数,产生了负介电常数的ENZ条件和区域。这些特性通过减少前表面反射和增强后界面的内部反射来增强光捕获和吸收。提出的平面方法提高了光吸收和内部量子效率(IQE),而不需要复杂的纳米结构,为高效薄膜太阳能电池提供了可扩展的、制造兼容的策略。
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引用次数: 0
Design of photonic crystal fiber-based plasmonic sensor for diabetes detection 用于糖尿病检测的光子晶体光纤等离子体传感器设计
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-23 DOI: 10.1007/s10825-025-02475-3
Vishal Chaudhary, Sonal Singh

This research presents a surface plasmon resonance (SPR) sensor based on photonic crystal fiber (PCF), specifically designed for the detection of diabetes. Gold is used as the plasmonic material in a layered configuration to enhance sensor performance. The proposed design is analyzed using the finite element method (FEM) to assess its capability in identifying diabetes-related variations. The PCF structure features two rings of air holes organized in a hexagonal pattern, with a thin layer of gold plating applied to enable SPR excitation. SPR occurs when the surface plasmon polariton (SPP) mode and the fundamental core mode interact under phase-matching conditions. Diabetes-specific samples, characterized by distinct refractive indices (RI), are filled into the fiber. Variations in RI cause shifts in the SPR resonance wavelength observed through confinement loss analysis. The resonance shift between normal and diabetic samples reflects their differing RI values. The sensor attains a sensitivity of 2400 nm/RIU, based on these spectral shifts. With its straightforward sensing mechanism, the proposed PCF-based SPR sensor offers a practical, economical approach to diabetes diagnosis.

本研究提出了一种基于光子晶体光纤(PCF)的表面等离子体共振(SPR)传感器,专门用于糖尿病的检测。在层状结构中使用金作为等离子体材料来提高传感器的性能。采用有限元法(FEM)对提出的设计进行分析,以评估其识别糖尿病相关变异的能力。PCF结构的特点是有两个六角形的气孔环,并有一层薄薄的镀金层用于SPR激发。当表面等离激元(SPP)模式与基核模式在相位匹配条件下相互作用时,会产生SPR。以不同的折射率(RI)为特征的糖尿病特异性样品被填充到纤维中。通过约束损耗分析观察到,RI的变化引起SPR共振波长的位移。正常和糖尿病样本之间的共振位移反映了它们不同的RI值。基于这些光谱位移,传感器的灵敏度达到2400 nm/RIU。基于pcf的SPR传感器具有直观的传感机制,为糖尿病诊断提供了一种实用、经济的方法。
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引用次数: 0
A novel low barrier Schottky contact super barrier rectifier structure for improving single-event gate rupture tolerance 一种新型低势垒肖特基接触超势垒整流器结构,可提高单事件栅极的抗破裂能力
IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-12-21 DOI: 10.1007/s10825-025-02477-1
Qisheng Yu, Wensuo Chen, Jiaweiwen Huang, Zhigang Shen, Aohang Zhang, Jian Li

A novel structure of Low Barrier Schottky contact Super Barrier Rectifier (LB-SSBR) is proposed by introducing a partial SiGe region in the device’s anode side, creating a low electron-barrier structure. This low-barrier structure ensures that LB-SSBR can appropriately thicken the oxide layer without affecting the forward conduction characteristics, thereby improving the Single Event Gate Rupture (SEGR) tolerance. The TCAD simulation results show that, under the condition of no increase in reverse leakage current, the SEGR tolerance of LB-SSBR is significantly stronger than that of conventional SSBR. When heavy ions are incident from the most sensitive position of the device, the maximum electric field inside the oxide layer of LB-SSBR is 7.22 MV/cm, which is 46.08% lower than that of SSBR. Additionally, there is also a certain degree of improvement in both forward conduction and reverse recovery characteristics. The forward conduction voltage of LB-SSBR has decreased by 13.44%, and the reverse recovery charge of LB-SSBR has reduced by 38.34% compared to SSBR. In addition, the existing molecular-beam epitaxy (MBE) process can achieve the epitaxy of SiGe on Si substrate, making it convenient to prepare LB-SSBR structures.

提出了一种低势垒肖特基接触超级势垒整流器(LB-SSBR)的新结构,通过在器件的阳极侧引入部分SiGe区域,形成低电子势垒结构。这种低势垒结构确保LB-SSBR可以在不影响正向传导特性的情况下适当增厚氧化层,从而提高单事件门破裂(SEGR)耐受性。TCAD仿真结果表明,在不增加反漏电流的情况下,LB-SSBR的SEGR容限明显强于传统SSBR。当重离子从器件最敏感位置入射时,LB-SSBR氧化层内的最大电场为7.22 MV/cm,比SSBR低46.08%。此外,在正向传导和反向恢复特性方面也有一定程度的改善。与SSBR相比,LB-SSBR的正向导通电压降低了13.44%,反向恢复电荷降低了38.34%。此外,现有的分子束外延(MBE)工艺可以实现SiGe在Si衬底上的外延,方便了LB-SSBR结构的制备。
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Journal of Computational Electronics
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