Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317577
V. Švrček, D. Mariotti, K. Matsubara, M. Kondo
Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.
{"title":"Carriers multiplication in neighboring surfactant-free silicon nanocrystals produced by 3D-surface engineering in liquid medium.","authors":"V. Švrček, D. Mariotti, K. Matsubara, M. Kondo","doi":"10.1109/PVSC.2012.6317577","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317577","url":null,"abstract":"Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79729332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317881
X. Niu, M. Wang, X. Zhu, C. Yu, G. Li, B. Cheng, S. Liu, J. Rong, Z. Chen, L. Wu, C. Chen, B. Xu, K. Fung, C. Wronski, L. Yang
Over the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, amorphous Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently, reduced product prices and competing technologies from crystalline silicon and other thin film technologies have made amorphous and microcrystalline silicon based thin film technology very challenging, and requires further increase in module efficiency and decrease in manufacturing cost. As one of the few companies in the world with significant manufacturing capacity for thin film Si PV products, Chint Solar has been at the forefront of technology development for the mass production of large-scale (Gen. 5, 1.43m2) Si thin film solar modules in the last 5 years. We will review major technology advancements which have led to the mass produced tandem silicon thin film module with 10.0% plus stabilized efficiency, along with the field performance of those modules.
{"title":"Progress in research and mass production of large-scale thin film Si solar cells","authors":"X. Niu, M. Wang, X. Zhu, C. Yu, G. Li, B. Cheng, S. Liu, J. Rong, Z. Chen, L. Wu, C. Chen, B. Xu, K. Fung, C. Wronski, L. Yang","doi":"10.1109/PVSC.2012.6317881","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317881","url":null,"abstract":"Over the past decade, the PV industry has witnessed tremendous growth in manufacturing scale and technology advancement, with PV generated electricity cost ever approaching grid parity. Among them, amorphous Si based thin film technology has made substantial progress in demonstrating its inherent advantages in lower material cost, ease of manufacturing and higher energy yield, etc. More recently, reduced product prices and competing technologies from crystalline silicon and other thin film technologies have made amorphous and microcrystalline silicon based thin film technology very challenging, and requires further increase in module efficiency and decrease in manufacturing cost. As one of the few companies in the world with significant manufacturing capacity for thin film Si PV products, Chint Solar has been at the forefront of technology development for the mass production of large-scale (Gen. 5, 1.43m2) Si thin film solar modules in the last 5 years. We will review major technology advancements which have led to the mass produced tandem silicon thin film module with 10.0% plus stabilized efficiency, along with the field performance of those modules.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83552880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318200
Moon Hee Kang, A. Rohatgi
A simple numerical model was developed in this paper to quantitatively analyze the impact of module efficiency, module cost, balance of system (BOS) cost, and financial inputs on the levelized cost of Electricity (LCOE). It is found that LCOE is a linear or nearly linear function of installed system cost (BOS+Module), loan rate, and total system derate losses. LCOE was found to be a non-linear function of system lifetime and module efficiency. User friendly charts were generated along with empirical equations to establish quantitative relationship between LCOE and system and financial parameters. A roadmap to grid parity at 9cents/kWh was developed to illustrate how to use the methodology, charts, and equations developed in this paper to achieve a target LCOE by selecting the right combination of above parameters.
{"title":"Development and use of a simple numerical model to quantify the impact of key photovoltaics system parameters on the levelized cost of electricity","authors":"Moon Hee Kang, A. Rohatgi","doi":"10.1109/PVSC.2012.6318200","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318200","url":null,"abstract":"A simple numerical model was developed in this paper to quantitatively analyze the impact of module efficiency, module cost, balance of system (BOS) cost, and financial inputs on the levelized cost of Electricity (LCOE). It is found that LCOE is a linear or nearly linear function of installed system cost (BOS+Module), loan rate, and total system derate losses. LCOE was found to be a non-linear function of system lifetime and module efficiency. User friendly charts were generated along with empirical equations to establish quantitative relationship between LCOE and system and financial parameters. A roadmap to grid parity at 9cents/kWh was developed to illustrate how to use the methodology, charts, and equations developed in this paper to achieve a target LCOE by selecting the right combination of above parameters.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81068090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317883
D. Snyder, D. Wolford
Calibration of standard sets of solar cell sub-cells is an important step to laboratory verification of on-orbit performance of new solar cell technologies. This paper, looks at the potential capabilities of a lightweight weather balloon payload for solar cell calibration. A 1500 gr latex weather balloon can lift a 2.7 kg payload to over 100,000 ft altitude, above 99% of the atmosphere. Data taken between atmospheric pressures of about 30 to 15 mbar may be extrapolated via the Langley Plot method to 0 mbar, i.e. AM0. This extrapolation, in principle, can have better than 0.1% error. The launch costs of such a payload are significantly less the the much larger, higher altitude balloons, or the manned flight facility. The low cost enables a risk tolerant approach to payload development. Demonstration of 1% standard deviation flight-to-flight variation is the goal of this project. This paper describes the initial concept of solar cell calibration payload, and reports initial test flight results.
{"title":"A low cost weather balloon borne solar cell calibration payload","authors":"D. Snyder, D. Wolford","doi":"10.1109/PVSC.2012.6317883","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317883","url":null,"abstract":"Calibration of standard sets of solar cell sub-cells is an important step to laboratory verification of on-orbit performance of new solar cell technologies. This paper, looks at the potential capabilities of a lightweight weather balloon payload for solar cell calibration. A 1500 gr latex weather balloon can lift a 2.7 kg payload to over 100,000 ft altitude, above 99% of the atmosphere. Data taken between atmospheric pressures of about 30 to 15 mbar may be extrapolated via the Langley Plot method to 0 mbar, i.e. AM0. This extrapolation, in principle, can have better than 0.1% error. The launch costs of such a payload are significantly less the the much larger, higher altitude balloons, or the manned flight facility. The low cost enables a risk tolerant approach to payload development. Demonstration of 1% standard deviation flight-to-flight variation is the goal of this project. This paper describes the initial concept of solar cell calibration payload, and reports initial test flight results.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88570018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317612
Y. Erkaya, N. Hegde, K. Aryal, G. Rajan, P. Boland, V. Ranjan, H. Baumgart, R. Collins, S. Marsillac
Alternative deposition methods and materials are of interest for the fabrication of thin film solar cells since they offer potential enhancements for either low cost, high speed or high efficiency but also because they can help in better understanding the underlying physical and chemical processes that could lead to the next generation of solar cells. In this study, we will present new results on the deposition of ZnS by atomic layer deposition (ALD) as an alternate to CdS deposited by chemical bath deposition.
{"title":"Characterization of ZnS films deposited by ALD for CIGS solar cells","authors":"Y. Erkaya, N. Hegde, K. Aryal, G. Rajan, P. Boland, V. Ranjan, H. Baumgart, R. Collins, S. Marsillac","doi":"10.1109/PVSC.2012.6317612","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317612","url":null,"abstract":"Alternative deposition methods and materials are of interest for the fabrication of thin film solar cells since they offer potential enhancements for either low cost, high speed or high efficiency but also because they can help in better understanding the underlying physical and chemical processes that could lead to the next generation of solar cells. In this study, we will present new results on the deposition of ZnS by atomic layer deposition (ALD) as an alternate to CdS deposited by chemical bath deposition.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89289337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318192
Bowen Zhou, Cheng Zheng, C. Grigoropoulos
This paper presents a systematic approach for optimizing commercial rooftop PV system installations, estimating energy yields using more realistic angle-and-wavelength-resolved clear sky solar irradiance data and quantifying the economic benefits. In this paper's case study of Berkeley, the proposed semiannually-fixed tilt configuration of solar panels is found to increase the energy yield by 5.8% over the year and up to 15.6% during peak summer days. This study attempts to quantify both the energy yield and economic benefits of improved angular and spectral response of solar cells. We believe that these sets of information would be important for manufacturers to assess the cost-effectiveness of a certain technological improvement, and for developers to choose the more cost-effective products for installations at a given geographic location. 3 cities varying from N30° to N45° in latitude are covered in this study to represent the typical geographic variations in the lower continental United States. The north-south difference in energy yield due to geographic locations is most significant in winter by about 15%.
{"title":"Optimization of commercial rooftop PV systems in the continental united states using angle-and-wavelength-resolved solar irradiance data","authors":"Bowen Zhou, Cheng Zheng, C. Grigoropoulos","doi":"10.1109/PVSC.2012.6318192","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318192","url":null,"abstract":"This paper presents a systematic approach for optimizing commercial rooftop PV system installations, estimating energy yields using more realistic angle-and-wavelength-resolved clear sky solar irradiance data and quantifying the economic benefits. In this paper's case study of Berkeley, the proposed semiannually-fixed tilt configuration of solar panels is found to increase the energy yield by 5.8% over the year and up to 15.6% during peak summer days. This study attempts to quantify both the energy yield and economic benefits of improved angular and spectral response of solar cells. We believe that these sets of information would be important for manufacturers to assess the cost-effectiveness of a certain technological improvement, and for developers to choose the more cost-effective products for installations at a given geographic location. 3 cities varying from N30° to N45° in latitude are covered in this study to represent the typical geographic variations in the lower continental United States. The north-south difference in energy yield due to geographic locations is most significant in winter by about 15%.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87339852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318032
Z. Li, K. Mikeska, L. Liang, Andreas Meisel, Giuseppe Scardera, L. Cheng, P. Vernooy, M. Lewittes, M. Lu, F. Gao, L. Zhang, A. Carroll, Chun-Sheng Jiang
Crystalline Si (c-Si) solar cell production has reached an annual scale of ~20 GW globally. Development of this leading technology has been boosted by continuous innovation in material science and reduced material and processing costs. An example of such innovation is the step-wise progression to more lightly doped emitters (LDE) that reduces recombination in the solar cell. Continuous improvement in front-side (FS) metallization pastes has enabled this progression to lower series resistance and higher cell efficiency. We report here homogeneous emitter LDE cells with efficiencies as high as 18.9%, printed with advanced FS Ag paste. A clear understanding of the microstructure of the interfacial region between Ag contact and Si emitter, and the associated electrical conduction mechanism of LDE cells can provide the guidance needed to drive overall efficiency higher and end-user cost lower. We report our latest investigation of the microstructure of the interface between FS Ag contact and lightly-doped emitter using scanning electron microscopy techniques. The microstructural features such as nano-Ag colloids, interfacial glass, and Ag crystallites are studied in detail. The relationship between microstructure, cell performance, and current conduction mechanism for LDE cells are discussed.
{"title":"Microstructural characterization of front-side Ag contact of crystalline Si solar cells with lightly doped emitter","authors":"Z. Li, K. Mikeska, L. Liang, Andreas Meisel, Giuseppe Scardera, L. Cheng, P. Vernooy, M. Lewittes, M. Lu, F. Gao, L. Zhang, A. Carroll, Chun-Sheng Jiang","doi":"10.1109/PVSC.2012.6318032","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318032","url":null,"abstract":"Crystalline Si (c-Si) solar cell production has reached an annual scale of ~20 GW globally. Development of this leading technology has been boosted by continuous innovation in material science and reduced material and processing costs. An example of such innovation is the step-wise progression to more lightly doped emitters (LDE) that reduces recombination in the solar cell. Continuous improvement in front-side (FS) metallization pastes has enabled this progression to lower series resistance and higher cell efficiency. We report here homogeneous emitter LDE cells with efficiencies as high as 18.9%, printed with advanced FS Ag paste. A clear understanding of the microstructure of the interfacial region between Ag contact and Si emitter, and the associated electrical conduction mechanism of LDE cells can provide the guidance needed to drive overall efficiency higher and end-user cost lower. We report our latest investigation of the microstructure of the interface between FS Ag contact and lightly-doped emitter using scanning electron microscopy techniques. The microstructural features such as nano-Ag colloids, interfacial glass, and Ag crystallites are studied in detail. The relationship between microstructure, cell performance, and current conduction mechanism for LDE cells are discussed.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90584007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318226
E. Riley
This paper explores methods with which developers and technology providers can fully monetize energy production estimates of photovoltaic plants, thereby leaving little value on the table. The methods discussed in this paper describe comprehensive model validation and performance testing. Risk allocation through commercial means is also briefly discussed.
{"title":"Photovoltaic system model validation and performance testing: What project developers and technology providers must do to support energy production estimates","authors":"E. Riley","doi":"10.1109/PVSC.2012.6318226","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318226","url":null,"abstract":"This paper explores methods with which developers and technology providers can fully monetize energy production estimates of photovoltaic plants, thereby leaving little value on the table. The methods discussed in this paper describe comprehensive model validation and performance testing. Risk allocation through commercial means is also briefly discussed.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86704815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317840
S. Pisklak, M. Mills, C. Quinn
The commonly-used photovoltaic system performance estimators allow for only a single inverter input. New products, however, have multiple inverter inputs. To use these estimators with the newer products, a “Straight-Sum” method is typically employed: each string is treated as an independent array and the results are mathematically summed. The resultant estimated system yield includes an error associated with the efficiency curve shape. To calculate this error, a new performance estimate method is described here. For the Dow™ POWERHOUSE™ system, the Straight-Sum method was found to under-represent performance by 2.7-4.0%, depending on array location and orientation.
{"title":"Method for estimating the power conversion output in photovoltaic systems with more than one maximum power point tracking device","authors":"S. Pisklak, M. Mills, C. Quinn","doi":"10.1109/PVSC.2012.6317840","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317840","url":null,"abstract":"The commonly-used photovoltaic system performance estimators allow for only a single inverter input. New products, however, have multiple inverter inputs. To use these estimators with the newer products, a “Straight-Sum” method is typically employed: each string is treated as an independent array and the results are mathematically summed. The resultant estimated system yield includes an error associated with the efficiency curve shape. To calculate this error, a new performance estimate method is described here. For the Dow™ POWERHOUSE™ system, the Straight-Sum method was found to under-represent performance by 2.7-4.0%, depending on array location and orientation.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85176953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317949
K. Nakajima, R. Murai, K. Morishita, K. Kutsukake, N. Usami
Conventional crystal growth methods using crucibles cannot control the stress caused by expansion due to the solidification of the Si melt. We proposed a noncontact crucible method using a conventional crucible that reduces the stress in Si multicrystalline ingots. In this method, nucleation occurs on the surface of a Si melt using seed crystals, and crystals grow inside the Si melt without touching the crucible walls. Then, the ingots continue to grow while being slowly pulled upward to ensure that the crystal growth remains in the Si melt. A Si ingot with a diameter of 23 cm was obtained in a crucible with a diameter of 30 cm. The maximum solidification ratio in the growth was more than 80%. We have confirmed that such noncontact crucible growth was possible using a conventional crucible.
{"title":"Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall","authors":"K. Nakajima, R. Murai, K. Morishita, K. Kutsukake, N. Usami","doi":"10.1109/PVSC.2012.6317949","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317949","url":null,"abstract":"Conventional crystal growth methods using crucibles cannot control the stress caused by expansion due to the solidification of the Si melt. We proposed a noncontact crucible method using a conventional crucible that reduces the stress in Si multicrystalline ingots. In this method, nucleation occurs on the surface of a Si melt using seed crystals, and crystals grow inside the Si melt without touching the crucible walls. Then, the ingots continue to grow while being slowly pulled upward to ensure that the crystal growth remains in the Si melt. A Si ingot with a diameter of 23 cm was obtained in a crucible with a diameter of 30 cm. The maximum solidification ratio in the growth was more than 80%. We have confirmed that such noncontact crucible growth was possible using a conventional crucible.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79567688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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