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2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)最新文献

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Interband transitions in InP biased with THz fields of 4 MV/cm 在4 MV/cm的太赫兹场中偏置InP的带间跃迁
C. Schmidt, O. Schubert, F. Junginger, S. Mahrlein, B. Mayer, A. Sell, R. Huber, A. Leitenstorfer
The influence of strong electric fields on electronic properties of semiconductors is of particular interest both for fundamental science and applications in high speed electronics. Investigations using large quasi-static [1] and THz [2] fields have been performed. However, the accessible field amplitudes have been limited to values typically below 1 MV/cm due to the dielectric breakdown under stationary bias and the availability of intense phase-stable THz sources, respectively.
强电场对半导体电子特性的影响是基础科学和高速电子应用中特别感兴趣的问题。使用大型准静态场[1]和太赫兹场[2]进行了研究。然而,由于稳定偏压下的介质击穿和强相稳定太赫兹源的可用性,可获得的场振幅被限制在通常低于1 MV/cm的值。
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引用次数: 2
Mid-infrared continuously tunable single mode VECSEL 中红外连续可调单模VECSEL
A. Khiar, F. Felder, M. Rahim, M. Fill, F. Hobrecker, H. Zogg
Single mode continuously tunable mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) have been realized [1]. IV–VI semiconductors such as PbTe are used for the active region. Emission wavelength is ∼5 µm with a total tuning range >100 nm. The VECSEL is optically pumped using a 1.55 µm laser diode.
单模连续可调谐中红外垂直外腔面发射激光器(VECSEL)已经实现[1]。IV-VI半导体如PbTe用于有源区。发射波长为~ 5µm,总调谐范围>100 nm。VECSEL使用1.55 μ m激光二极管进行光泵浦。
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引用次数: 1
Fluorescence properties of thick shell CdSe/CdS quantum dots at cryogenic temperature 低温下厚壳CdSe/CdS量子点的荧光特性
G. Camps, S. Buil, X. Quélin, C. Javaux, B. Mahler, B. Dubertret, J. Hermier
The blinking of fluorophore, that means the switch between bright and dark states, is a well-known phenomenon for single emitters. In the case of standard CdSe/ZnS colloidal quantum dots (QDs), this was considered as their main drawback for experiments at the single molecule level. Statistical analysis of these intensity fluctuations has demonstrated that the dark states duration exhibits a universal heavy-tailed power law distribution. Long off-periods, of the order of the time experiment, are always observed.
荧光团的闪烁,即在亮态和暗态之间切换,是一个众所周知的现象。在标准CdSe/ZnS胶体量子点(QDs)的情况下,这被认为是它们在单分子水平上实验的主要缺点。对这些强度波动的统计分析表明,暗态持续时间呈现普遍的重尾幂律分布。长期的非周期,时间实验的顺序,总是观察到的。
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引用次数: 1
High power Tm:silica fiber lasers: Current status, prospects and challenges 高功率硅光纤激光器:现状、展望与挑战
P. Moulton
Reported near-diffraction-limited, cw power levels from Tm-doped silica fiber lasers in the 2000-nm wavelength region have now passed the 1 kW level, due to advances in fiber technology, pump lasers and associated pump-coupling fiber optics. Compared to the more common high-power Yb-doped fibers, Tm:silica fibers have several advantages, particularly with respect to limits set by fiber nonlinear effects such as stimulated Brillouin scattering. These have been exploited to allow generation of 600 W of single-frequency, narrow-linewidth power, the most, to our knowledge, of any fiber-based laser. In addition, there have been significant advances in generation of high-peak-power pulses from Tm:fiber-based sources.
据报道,由于光纤技术、泵浦激光器和相关泵浦耦合光纤的进步,在2000 nm波长区域,掺铥二氧化硅光纤激光器的近衍射限制连续波功率水平现已超过1 kW。与更常见的高功率掺镱光纤相比,Tm:二氧化硅光纤有几个优点,特别是在光纤非线性效应(如受激布里渊散射)的限制方面。据我们所知,这些激光器可以产生600瓦的单频窄线宽功率,是目前光纤激光器中功率最大的。此外,在利用Tm纤维源产生峰值功率脉冲方面也取得了重大进展。
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引用次数: 15
Time-resolved ultrafast all-optical switching in directional couplers with second-order nonlinearity 二阶非线性定向耦合器中时间分辨超快全光开关
A. Solntsev, D. Neshev, R. Schiek
Nonlinear directional couplers (NLDC) allow for ultrafast all-optical switching. To date, various types of NLDCs have been studied, predominantly based on the Kerr [1] or cascaded quadratic nonlinearity [2] in second-harmonic generation (SHG). In the later case the switching can occur at lower powers because of a propagating-wave resonance effect. While a number of experiments to characterise the pulse propagation in Kerr-type couplers exist, till now the temporal behavior of short pulses in the NLDC with quadratic nonlinearity has never been studied experimentally. Several important questions such as the reason for incomplete switching and possible pulse compression factors remain unanswered. In this work we experimentally measure the pulse reshaping in a NLDC with second-order nonlinearity and show that pulse compression, break-up and back-switching play an important role in the switching process.
非线性定向耦合器(NLDC)允许超快全光开关。迄今为止,已经研究了各种类型的NLDCs,主要基于二次谐波产生(SHG)中的Kerr[1]或级联二次非线性[2]。在后一种情况下,由于传播波共振效应,开关可以在较低的功率下发生。虽然已有许多实验来表征克尔型耦合器中脉冲的传播特性,但到目前为止,还没有对具有二次非线性的短脉冲在NLDC中的时间行为进行实验研究。几个重要的问题,如不完全开关的原因和可能的脉冲压缩因素仍然没有答案。本文通过实验测量了二阶非线性NLDC中的脉冲整形,并证明了脉冲压缩、破裂和反向开关在开关过程中起着重要作用。
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引用次数: 0
Dual wavelength and switchable laser operation of Pr3+:LiYF4 crystals at 523 nm and 640 nm 523 nm和640 nm Pr3+:LiYF4晶体的双波长和可切换激光操作
S. Mũller, N. Hansen, O. Hellmig, K. Petermann, G. Huber
Solid state lasers in the visible spectral region have many possible applications like projection technology and spectroscopy [1,2]. In these fields the generation of green light is still a challenge. Recent projection devices generate green laser light by frequency doubling of near-infrared solid state laser radiation. A compact, simple, and efficient laser based projection device is not yet developed. The trivalent Pr3+ ion in the host material LiYF4 (YLF) has several transitions at wavelengths in the visible spectral range, for example at 523 nm (green) or at 640 nm (red). Pr:YLF can be efficiently pumped by GaInN laser diodes at 444 nm (blue) [3].
可见光谱区域的固体激光器有许多可能的应用,如投影技术和光谱学[1,2]。在这些领域,产生绿光仍然是一个挑战。最近的投影装置通过近红外固体激光辐射的倍频产生绿色激光。一种紧凑、简单、高效的激光投影装置尚未开发出来。主体材料LiYF4 (YLF)中的三价Pr3+离子在可见光谱范围内的波长有几个跃迁,例如523 nm(绿色)或640 nm(红色)。Pr:YLF可以在444 nm(蓝色)处被GaInN激光二极管有效抽运[3]。
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引用次数: 1
Singlemode tunable VCSELs with integrated MEMS technology 集成MEMS技术的单模可调谐vcsel
B. Kogel, P. Debernardi, P. Westbergh, Å. Haglund, J. Gustavsson, J. Bengtsson, E. Haglund, A. Larsson
A simple MEMS technology for wafer-scale integration of tunable VCSELs is presented in Fig. 1 a) [1]. The tunableVCSEL is composed of a “half-VCSEL”, which is a VCSEL without top distributed Bragg reflector (DBR), and an externalmirror, which is a micromachined membrane (“MEMS”). The GaAs-based half-VCSEL comprises a bottom DBR, an active region with 5 quantum wells (QWs), and an oxide aperture for current confinement. The etched mesa is capped with an antireflection coating (AR-c) and embedded in a low-k dielectric (BCB). Reflown photo-resist droplets are used as sacrificial layer and as preform for making curved micro-mirrors, as shown in Fig. 1 b). A dielectric DBR (7.5 pairs TiO2/SiO2) and an actuation layer (50 nm Ni) are deposited onto the half-VCSEL, and then the MEMS structure is etched. Finally, the mirror membrane is released by dissolving the sacrificial layer in acetone and removing the liquid in a critical point dryer. The VCSEL is tuned by injecting a heating current into the actuation layer on the flexible MEMS, which expands and shifts the cavity resonance towards longer wavelengths. In the followingwe present an optimized half-symmetric cavity design for singlemode emission. Compared to [1] the mesa diameter is enlarged (from 120µm to 200µm) to increase (i. e. flatten) the radius of curvature (RoC) from 420µm to 1.2mm, while keeping the air-gap at around 3.7µm. The threshold gain of fundamental mode and higher order mode during tuning are simulated (Fig. 1 c)) using a 3D model based on coupled mode theory [2]. The resulting gain difference for different oxide aperture diameters Dox is plotted in Fig. 1 d). The cavity supports the single fundamental mode for Dox ≤10µm, while themore expanded higher order transverse modes suffer from clipping at the oxide aperture (for Dox ≤5µm the fundamental mode is affected, too). A microscope image of a fully processed tunable VCSEL is shown in Fig. 1 e). Each chip contains an array of 8×8 tunable VCSELs with a small footprint of 290µm×400µm. The spectrum of a tunable VCSEL with 10µm oxide aperture is shown in Fig. 1 f). The VCSEL emits in fundamental mode with a sidemode suppression ratio SMSR≥25 dB over the tuning range of 12 nm. In comparison, conventional non-tunable 850-nm VCSELs with flat top DBR are singlemode only for Dox ≤3 µm and usually operated at higher current densities.
图1a)给出了一种用于可调谐vcsel晶圆级集成的简单MEMS技术[1]。可调谐的VCSEL由一个“半VCSEL”和一个外镜组成,前者是一个没有顶部分布布拉格反射器(DBR)的VCSEL,后者是一个微机械薄膜(MEMS)。基于gaas的半vcsel包括底部DBR,具有5个量子阱(qw)的有源区域和用于电流限制的氧化物孔径。蚀刻的台面覆盖有抗反射涂层(AR-c),并嵌入低k介电介质(BCB)中。如图1 b)所示,光阻液液滴被用作牺牲层和预制体,用于制作弯曲微镜。在半vcsel上沉积介电DBR(7.5对TiO2/SiO2)和驱动层(50 nm Ni),然后蚀刻MEMS结构。最后,通过在丙酮中溶解牺牲层并在临界点干燥器中除去液体来释放镜像膜。通过向柔性MEMS上的驱动层注入加热电流来调谐VCSEL,该驱动层扩展并将腔谐振向更长的波长移动。在下面我们提出了一个优化的半对称腔设计单模发射。与[1]相比,平台直径被扩大(从120µm到200µm),以增加(即平坦)曲率半径(RoC)从420µm到1.2mm,同时将气隙保持在3.7µm左右。利用基于耦合模式理论[2]的三维模型,模拟了调谐过程中基模和高阶模的阈值增益(图1c))。不同氧化物孔径直径Dox的增益差异如图1所示。当Dox≤10µm时,腔体支持单基模,而在氧化物孔径处扩展的高阶横向模受到削波影响(当Dox≤5µm时,基模也受到影响)。图1 (e)显示了经过充分处理的可调谐VCSEL的显微镜图像。每个芯片包含一个8×8可调谐VCSEL阵列,占地面积为290µm×400µm。具有10µm氧化物孔径的可调谐VCSEL的光谱如图1f所示。在12 nm调谐范围内,VCSEL以基模发射,侧模抑制比SMSR≥25 dB。相比之下,传统的具有平顶DBR的850 nm不可调谐vcsel仅在Dox≤3µm时是单模的,并且通常在更高的电流密度下工作。
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引用次数: 1
Numerical simulation of thermal effects in composite Nd:YAG slab laser active medium with collinear zig-zag pumping 共线锯齿形泵浦Nd:YAG板状复合激光有效介质热效应的数值模拟
M. Gabalis, V. Girdauskas, A. Aleknavičius, A. Michailovas
Main limiting factor for solid state laser average output power is related to thermal effects in active medium. Optimizing heat removal should be a way to avoid this problem. One of the options is to use cryogenical cooling which is quite complicated for most applications. Other solutions for room temperature are mainly based on relatively large area for heat removal and geometries which allow compensating thermally induced distortions [1,2].
固体激光器平均输出功率的主要限制因素与有源介质中的热效应有关。优化散热应该是避免这个问题的一种方法。其中一个选择是使用低温冷却,这对大多数应用来说是相当复杂的。室温下的其他解决方案主要基于相对较大的散热面积和允许补偿热引起的变形的几何形状[1,2]。
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引用次数: 0
Second-harmonic nanoparticles for deep tissue in vivo imaging 用于深部组织体内成像的二次谐波纳米颗粒
R. Grange, Thomas Lanvin, C. Hsieh, Y. Pu, D. Psaltis
Deep tissue in vivo imaging remains a great challenge and we propose to use second-harmonic radiation imaging probes (SHRIMPs) as long-term non bleaching biomarkers. We show that the contrast of SHRIMPs with autofluorescence and endogenous second-harmonic generation (SHG) signal is strong enough for imaging as deep as 100 um in the tail of a living rodent. Currently, optical microscopy often uses fluorescent markers such as green fluorescent proteins (GFPs) and quantum dots to specifically enhance the contrast of selected targets [1]. Such fluorescent agents, however, are limited by photobleaching, blinking, and phototoxicity.
深部组织体内成像仍然是一个巨大的挑战,我们建议使用二次谐波辐射成像探针(SHRIMPs)作为长期的非漂白生物标志物。我们表明,虾与自身荧光和内源性二次谐波(SHG)信号的对比足够强,可以在活体啮齿动物的尾巴中成像100微米深。目前,光学显微镜通常使用荧光标记物,如绿色荧光蛋白(gfp)和量子点来特异性增强选定靶标的对比度[1]。然而,这种荧光剂受到光漂白、闪烁和光毒性的限制。
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引用次数: 0
Beat note stabilization of a 10–60 GHz dual polarization Nd:YAG microchip laser through optical down conversion 10-60 GHz双偏振Nd:YAG微芯片激光器光下转换的拍音稳定
Antoine Rolland, M. Brunel, G. Loas, L. Frein, M. Vallet, M. Alouini
In the context of radio-over-fiber and microwave photonic technologies [1], we show an optically carried frequency synthesis working in the range of 10–60 GHz using a dual-polarization microchip laser. An intracavity electro-optical crystal in the cavity turns the laser into a voltage controlled oscillator (VCO) and enables to implement an optical phase-locked loop (PLL). By taking advantage of the short cavity length of the microchip laser, a stabilization scheme at 40 GHz was demonstrated by mixing electrically the beat note to a phase locked dielectric resonator oscillator at 39.5 GHz [2]. Nevertheless, this electrical mixing approach has some limitations in terms of reachable frequencies and tunability, especially when one wants to reach the millimeter-wave range. To overcome theses difficulties, we propose here to operate a novel optoelectronic down-conversion principle before locking.
在光纤无线电和微波光子技术[1]的背景下,我们展示了一种使用双偏振微芯片激光器在10-60 GHz范围内工作的光载频率合成。腔内电光晶体将激光转换为压控振荡器(VCO),实现光锁相环(PLL)。利用微芯片激光器的短腔长,在39.5 GHz的锁相介质谐振振荡器中混合电拍音,证明了40 GHz的稳定方案。然而,这种电混合方法在可达频率和可调性方面有一些限制,特别是当人们想要达到毫米波范围时。为了克服这些困难,我们提出在锁定前操作一种新的光电下变频原理。
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引用次数: 0
期刊
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC)
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