Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701085
S. Anwar, J. LeClair
Nanotechnology is the creation of functional materials, devices, and systems through control of matter on the nanometer length scale and the exploitation of novel properties and phenomena developed at that scale. Nanotechnology holds singular promise to revolutionize science, engineering, and technology. It already has significant impact in countless industries including communications, medicine, environmental cleanup, agriculture, and more. Innovative materials, components, and systems based on nanotechnologies are recognized as promising growth innovators for the years to come. It is expected that eventually nanotechnologies will merge into a nanotechnology cluster offering a complete range of functionalities in formation, energy, construction, environmental, and biomedical domains [1].
{"title":"Development of WebCT-based nanotechnology courses for on-line delivery: A case study","authors":"S. Anwar, J. LeClair","doi":"10.1109/ESCINANO.2010.5701085","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701085","url":null,"abstract":"Nanotechnology is the creation of functional materials, devices, and systems through control of matter on the nanometer length scale and the exploitation of novel properties and phenomena developed at that scale. Nanotechnology holds singular promise to revolutionize science, engineering, and technology. It already has significant impact in countless industries including communications, medicine, environmental cleanup, agriculture, and more. Innovative materials, components, and systems based on nanotechnologies are recognized as promising growth innovators for the years to come. It is expected that eventually nanotechnologies will merge into a nanotechnology cluster offering a complete range of functionalities in formation, energy, construction, environmental, and biomedical domains [1].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81847391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper describes a finite element method that is appropriate for the numerical prediction of the nonlinear mechanical behavior of different types of isolated single walled carbon nanotubes. A finite element progressive fracture model based on the modified Morse interatomic potential is used to evaluate mechanical properties of carbon nanotubes, such as axial and radial Young's modulus, shear modulus, natural frequency and buckling load are presented to illustrate the accuracy of this simulation technique. The novelty of the model lies on the use of beam element with non-linear capability, i.e, BEAM188, to evaluate SWNTs mechanical properties. In the present modeling work, individual carbon nanotube is simulated as a frame-like structure and the primary bonds between two nearest-neighboring atoms are treated as 3D beam elements. The beam element nonlinear properties are determined via the concept of energy equivalence between molecular dynamics and structural mechanics using Modified Morse potential. The calculated mechanical properties show good agreement with existing other work and experimental results as shown in Table I.
{"title":"Predicting a stretching behavior of carbon nanotubes using finite element method","authors":"E. Mohammadpour, M. Awang","doi":"10.1063/1.3587022","DOIUrl":"https://doi.org/10.1063/1.3587022","url":null,"abstract":"This paper describes a finite element method that is appropriate for the numerical prediction of the nonlinear mechanical behavior of different types of isolated single walled carbon nanotubes. A finite element progressive fracture model based on the modified Morse interatomic potential is used to evaluate mechanical properties of carbon nanotubes, such as axial and radial Young's modulus, shear modulus, natural frequency and buckling load are presented to illustrate the accuracy of this simulation technique. The novelty of the model lies on the use of beam element with non-linear capability, i.e, BEAM188, to evaluate SWNTs mechanical properties. In the present modeling work, individual carbon nanotube is simulated as a frame-like structure and the primary bonds between two nearest-neighboring atoms are treated as 3D beam elements. The beam element nonlinear properties are determined via the concept of energy equivalence between molecular dynamics and structural mechanics using Modified Morse potential. The calculated mechanical properties show good agreement with existing other work and experimental results as shown in Table I.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81534631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701061
N. Bidin, F. Noor
This paper reports the measurement of beam quality of titanium sapphire femtosecond laser. The fundamental wavelength of the femtosecond laser is 809 nm with the bandwidth of 18.82 nm and pulse duration of approximately 30 fs. It operates with a frequency of 75 MHz and 250 mW of the average power. A lens with focal length of 100 mm was used to focus the beam. A CCD camera was utilized as a sensitive sensor to capture the direct beam along its path of propagation, which was interfaced to a personnel computer. M2 factor was utilized to estimate the quality of the beam. The beam was found to operate in transverse mode of TEM00 with the M2 value of 2.76
{"title":"Beam quality of ultrashort titanium sapphire laser","authors":"N. Bidin, F. Noor","doi":"10.1109/ESCINANO.2010.5701061","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701061","url":null,"abstract":"This paper reports the measurement of beam quality of titanium sapphire femtosecond laser. The fundamental wavelength of the femtosecond laser is 809 nm with the bandwidth of 18.82 nm and pulse duration of approximately 30 fs. It operates with a frequency of 75 MHz and 250 mW of the average power. A lens with focal length of 100 mm was used to focus the beam. A CCD camera was utilized as a sensitive sensor to capture the direct beam along its path of propagation, which was interfaced to a personnel computer. M2 factor was utilized to estimate the quality of the beam. The beam was found to operate in transverse mode of TEM00 with the M2 value of 2.76","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79871317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701072
A. Ramazani, A. Mahyari
Silica nanoparticles were prepared by thermal decomposition of rice hulls. The results from XRD showed that the sample was silica NPs. The morphology and grain size of the silica NPs was investigated by SEM. As part of our ongoing program to develop efficient and robust methods for the preparation of heterocyclic compounds, we report here a simple, one-pot, three-component reaction between isocyanides, dibenzylamine and 2-formylbenzoic acid in the presence of silica NPs at ambient temperature after 5 h, leading to isocoumarin derivatives. Silica NPs were found to catalyze synthesis of isocoumarin derivatives from formylbenzoic acid, isocyanides and dibenzylamine in solvent-free conditions in high yields. We also have used silica gel powder instead of silica NPs in this reaction, but increasing of reaction times and decreasing of isocoumarin yields were observed. The use of just 0.3 g of silica NPs for 1 mmole of reactants is sufficient to push the reaction forward. Higher amounts of silica NPs (0.4 g) did not improve the result to a great extent.
{"title":"Synthesis of silica nanoparticles via thermal decomposition of rice hulls and their catalytic applications in the preparations of isocoumarins","authors":"A. Ramazani, A. Mahyari","doi":"10.1109/ESCINANO.2010.5701072","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701072","url":null,"abstract":"Silica nanoparticles were prepared by thermal decomposition of rice hulls. The results from XRD showed that the sample was silica NPs. The morphology and grain size of the silica NPs was investigated by SEM. As part of our ongoing program to develop efficient and robust methods for the preparation of heterocyclic compounds, we report here a simple, one-pot, three-component reaction between isocyanides, dibenzylamine and 2-formylbenzoic acid in the presence of silica NPs at ambient temperature after 5 h, leading to isocoumarin derivatives. Silica NPs were found to catalyze synthesis of isocoumarin derivatives from formylbenzoic acid, isocyanides and dibenzylamine in solvent-free conditions in high yields. We also have used silica gel powder instead of silica NPs in this reaction, but increasing of reaction times and decreasing of isocoumarin yields were observed. The use of just 0.3 g of silica NPs for 1 mmole of reactants is sufficient to push the reaction forward. Higher amounts of silica NPs (0.4 g) did not improve the result to a great extent.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89121108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Rodzi, M. H. Mamat, M. M. Zahidi, Y. Mohd, M. Berhan, M. Rusop
Nanostructures of Zinc Oxide (ZnO) are mostly reported that have potential to expand the new materials for devices applications. ZnO materials came from group II–IV in semiconductor and have hexagonal structures. For example this materials were fabricate in LED, Transistors, Transducers and Solar cell application. Many types of nanostructured have been synthesis such as nanoparticles, nanoflower, nanobelt, nanospring, nanowires and nanorods. Many techniques were used to deposit the ZnO nanostructured that have been prepared by several technique, such as Chemical Vapor deposition (CVD), hydrothermal method, and electrochemical deposition. The advantages of using electrochemical deposition are simple, economical, high deposition rate and deposition over large area [1]. This technique to deposit ZnO was first reported by Izaki and Omi [2] and Peulon and Lincot [3] more than ten years ago.
{"title":"Effect of annealing process on ZnO nanorod prepared at different potentials using electrodeposition technique","authors":"A. Rodzi, M. H. Mamat, M. M. Zahidi, Y. Mohd, M. Berhan, M. Rusop","doi":"10.1063/1.3586958","DOIUrl":"https://doi.org/10.1063/1.3586958","url":null,"abstract":"Nanostructures of Zinc Oxide (ZnO) are mostly reported that have potential to expand the new materials for devices applications. ZnO materials came from group II–IV in semiconductor and have hexagonal structures. For example this materials were fabricate in LED, Transistors, Transducers and Solar cell application. Many types of nanostructured have been synthesis such as nanoparticles, nanoflower, nanobelt, nanospring, nanowires and nanorods. Many techniques were used to deposit the ZnO nanostructured that have been prepared by several technique, such as Chemical Vapor deposition (CVD), hydrothermal method, and electrochemical deposition. The advantages of using electrochemical deposition are simple, economical, high deposition rate and deposition over large area [1]. This technique to deposit ZnO was first reported by Izaki and Omi [2] and Peulon and Lincot [3] more than ten years ago.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89199756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. R. Md Juremi, Ubaidillah Mustafa, M. Agam, Hadi Nur
Nanosphere Lithography (NSL) is inexpensive, inherently parallel, high-throughput and general material nanofabrication technique [1] where single layer polystyrene nanosphere (PSNs) were used as template. The template created by PSNs can be manipulated by various complimentary techniques such as binary layers of PSNs [2], reactive ion etching (RIE) [3], electron beam radiation [4] and microwave irradiation [5] to create further extension patterning abilities of the basic NSL technique. The nanostructures obtained from NSL technique are found in wide range of researchers and applications such as in photonic, solar cells, biomedical etc [6 – 8]. In this study, the size of PSNs were shrunk by exposing them to O2 plasma with various of time (5 – 30 s). The average diameters of the shrinking PSNs under O2 plasma etching were plotted. The PSNs were found gradually decreases in diameter corresponded to the O2 plasma exposure and the etching rate is found to be in the range of 9.1716 nm/s. The etched PSNs were later used as template to deposit metal particles such as Pt and Au. After lift-off process, the sample with thin film Pt or Au, were later etch again to form uniform periodic nanoholes as can be shown in Fig. 1. The nanoholes were characterized by Field Emission-Scanning Electron Microscopy (FE-SEM).
{"title":"Nanosphere Lithography: Fabrication of periodic arrays of nanoholes","authors":"N. R. Md Juremi, Ubaidillah Mustafa, M. Agam, Hadi Nur","doi":"10.1063/1.3587005","DOIUrl":"https://doi.org/10.1063/1.3587005","url":null,"abstract":"Nanosphere Lithography (NSL) is inexpensive, inherently parallel, high-throughput and general material nanofabrication technique [1] where single layer polystyrene nanosphere (PSNs) were used as template. The template created by PSNs can be manipulated by various complimentary techniques such as binary layers of PSNs [2], reactive ion etching (RIE) [3], electron beam radiation [4] and microwave irradiation [5] to create further extension patterning abilities of the basic NSL technique. The nanostructures obtained from NSL technique are found in wide range of researchers and applications such as in photonic, solar cells, biomedical etc [6 – 8]. In this study, the size of PSNs were shrunk by exposing them to O2 plasma with various of time (5 – 30 s). The average diameters of the shrinking PSNs under O2 plasma etching were plotted. The PSNs were found gradually decreases in diameter corresponded to the O2 plasma exposure and the etching rate is found to be in the range of 9.1716 nm/s. The etched PSNs were later used as template to deposit metal particles such as Pt and Au. After lift-off process, the sample with thin film Pt or Au, were later etch again to form uniform periodic nanoholes as can be shown in Fig. 1. The nanoholes were characterized by Field Emission-Scanning Electron Microscopy (FE-SEM).","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88406569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700996
S. Ismail, K. A. Razak, Pang Jing, Z. Lockman
In this work the formation of nanoporous WO3 by anodization of W at room temperature is presented. As little has been done on the formation of nanoporous WO3 by anodization, it is therefore of interest to study the oxide formation in great depth. WO3 has many applications especially in electrochomic and pchotocatalyst.
{"title":"Tungsten oxide nanoporous structure synthesized via direct electrochemical anodization","authors":"S. Ismail, K. A. Razak, Pang Jing, Z. Lockman","doi":"10.1109/ESCINANO.2010.5700996","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700996","url":null,"abstract":"In this work the formation of nanoporous WO3 by anodization of W at room temperature is presented. As little has been done on the formation of nanoporous WO3 by anodization, it is therefore of interest to study the oxide formation in great depth. WO3 has many applications especially in electrochomic and pchotocatalyst.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88545314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701015
S. M. Mousavi, Mokhtar Ahmadi, N. A. Amin, Z. Johari, H. Sadeghi, S. Anwar, R. Ismail
Single and bilayer graphenes have received considerable attention since the fabrication of Graphene nanoribbon (GNR) by Wang et al. [1] due to its excellent transport properties. Bilayer GNR consists of two weakly, van der Waals stacked honeycomb sheets of carbon atoms in a Bernal stacking [2,3] as can be seen in figure 1. The stacking layers are separated for about 0.3 nm [4]. The band structure of single layer graphene has linear dispersion relation whilst bilayer graphene has a quadratic dispersion [4] which provides an interesting venue research activity. In addition, these materials also offer useful electronics application because of its high carrier mobility which is crucial for the field-effect transistor operation. The carrier mobility in turn related to the conductance governed by the conductivity theory in which it helps indicate the transport performance of the bilayer GNR especially for the use of GNR as a conducting channel, connecting the source and drain electrodes.
{"title":"Bilayer Graphene nanoribbon conductance model in parabolic band structure","authors":"S. M. Mousavi, Mokhtar Ahmadi, N. A. Amin, Z. Johari, H. Sadeghi, S. Anwar, R. Ismail","doi":"10.1109/ESCINANO.2010.5701015","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701015","url":null,"abstract":"Single and bilayer graphenes have received considerable attention since the fabrication of Graphene nanoribbon (GNR) by Wang et al. [1] due to its excellent transport properties. Bilayer GNR consists of two weakly, van der Waals stacked honeycomb sheets of carbon atoms in a Bernal stacking [2,3] as can be seen in figure 1. The stacking layers are separated for about 0.3 nm [4]. The band structure of single layer graphene has linear dispersion relation whilst bilayer graphene has a quadratic dispersion [4] which provides an interesting venue research activity. In addition, these materials also offer useful electronics application because of its high carrier mobility which is crucial for the field-effect transistor operation. The carrier mobility in turn related to the conductance governed by the conductivity theory in which it helps indicate the transport performance of the bilayer GNR especially for the use of GNR as a conducting channel, connecting the source and drain electrodes.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87957943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701065
G. Krishnan, N. Bidin
The laser beam of 0.5 at % Nd:doped concentration in Nd:YVO4 crystal bar is performed under low pumping power of laser diode. In this investigation, a micro-laser is formed by keeping a thickness of bar crystal to be as a plane-plane optical resonator. Diode laser (808 nm) was used as the pumping source. The pump power was focused to localize the high power density of source the crystal bar surface. As a result, excitation of Nd3+ atom produce stimulated emission with 1064 nm. Our experimental result shows the optical-optical conversion of the 0.5 at % Nd:doped concentration in Nd:YVO4 crystal bar is 4.8 % with threshold power of 1403.8 mW.
在激光二极管的低抽运功率下，在Nd:YVO4晶条中进行了掺钕浓度为0.5%的激光束。在本研究中，微激光器是通过保持一定厚度的条状晶体形成的，就像一个平面-平面光学谐振腔。采用808 nm二极管激光器作为抽运源。将泵浦功率集中在晶体棒表面，使高功率密度源定位在晶体棒表面。结果表明，Nd3+原子的激发产生1064 nm的受激辐射。实验结果表明，掺钕浓度为0.5% at %的Nd:YVO4晶体条的光-光转换为4.8%，阈值功率为1403.8 mW。
{"title":"Optical efficiency Of 0.5 at % Nd:doped concentration in Nd:YVO4 oscillator","authors":"G. Krishnan, N. Bidin","doi":"10.1109/ESCINANO.2010.5701065","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701065","url":null,"abstract":"The laser beam of 0.5 at % Nd:doped concentration in Nd:YVO4 crystal bar is performed under low pumping power of laser diode. In this investigation, a micro-laser is formed by keeping a thickness of bar crystal to be as a plane-plane optical resonator. Diode laser (808 nm) was used as the pumping source. The pump power was focused to localize the high power density of source the crystal bar surface. As a result, excitation of Nd3+ atom produce stimulated emission with 1064 nm. Our experimental result shows the optical-optical conversion of the 0.5 at % Nd:doped concentration in Nd:YVO4 crystal bar is 4.8 % with threshold power of 1403.8 mW.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78107070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700952
M. Z. Pakhuruddin, K. Ibrahim, M. M. Ali, A. Aziz
Having known the fact that Silicon (Si) costs about 50% of the overall production costs of a crystalline Si (c-Si) PV module, an obvious alternative for cost reduction is to go for a thinner c-Si, in the order of less than 50µm [1]. But, the major drawback of the thin film c-Si solar cell in this range is its relatively low efficiency compared to its bulk (300µm) c-Si counterpart [2]. This is due to the fact that at a lower Si thickness, the optical absorption of the film becomes poorer being an indirect band gap semiconductor, hence needing both photons and phonons to be involved in near-band gap absorption processes [3]. The poor optical absorption will translate into a lower generation of electron-hole pairs by the incoming photons, thus lowering the output current collected at electrodes. In order to solve this issue, the absorption coefficient of the film has to be increased. An effective light-trapping scheme has to be employed where the film surface has to be textured by any of the known methods; alkaline or acidic chemical texturing, laser annealing or by lithography process [4]. With textured surfaces, the incoming sunlight (or specifically photons) will not be bounced-off the surface straight away due to reflection effects as what would happen to planar or untextured surfaces. Instead, the photons will be made bouncing back and forth inside the absorbing layer multiple of times hence increasing the chance for the high energy photons to generate electron-hole pairs, increasing the output current and efficiency of the solar cells [5].
{"title":"Surface morphology and optical reflection of thermally evaporated thin film al-doped silicon on plastic substrates for solar cells applications","authors":"M. Z. Pakhuruddin, K. Ibrahim, M. M. Ali, A. Aziz","doi":"10.1109/ESCINANO.2010.5700952","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700952","url":null,"abstract":"Having known the fact that Silicon (Si) costs about 50% of the overall production costs of a crystalline Si (c-Si) PV module, an obvious alternative for cost reduction is to go for a thinner c-Si, in the order of less than 50µm [1]. But, the major drawback of the thin film c-Si solar cell in this range is its relatively low efficiency compared to its bulk (300µm) c-Si counterpart [2]. This is due to the fact that at a lower Si thickness, the optical absorption of the film becomes poorer being an indirect band gap semiconductor, hence needing both photons and phonons to be involved in near-band gap absorption processes [3]. The poor optical absorption will translate into a lower generation of electron-hole pairs by the incoming photons, thus lowering the output current collected at electrodes. In order to solve this issue, the absorption coefficient of the film has to be increased. An effective light-trapping scheme has to be employed where the film surface has to be textured by any of the known methods; alkaline or acidic chemical texturing, laser annealing or by lithography process [4]. With textured surfaces, the incoming sunlight (or specifically photons) will not be bounced-off the surface straight away due to reflection effects as what would happen to planar or untextured surfaces. Instead, the photons will be made bouncing back and forth inside the absorbing layer multiple of times hence increasing the chance for the high energy photons to generate electron-hole pairs, increasing the output current and efficiency of the solar cells [5].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89523967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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