The electrically conductive zinc oxide (ZnO) nanostructures prepared by sol-gel spin coating are presented. This project has been focused on electrical, optical and structural properties of Al doped ZnO thin film. The effects of Al doping concentration at 0∼5 at.% on the Al doped ZnO thin film properties have been investigated. This project involves 3 processes which are thin film preparation, deposition and characterization. The thin films were characterized using Current-Voltage (I–V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties respectively. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The I-V measurement result indicated electrical properties of Al doped ZnO thin film improved with Al doping. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The FESEM investigations shows that the nanoparticles size become smaller and denser as the doping concentration increase.
{"title":"Electrically conductive zinc oxide (ZnO) nanostructures prepared by solgel spin-coating","authors":"N. Sin, M. H. Mamat, M. Rusop, Z. Zulkifli","doi":"10.1063/1.3586953","DOIUrl":"https://doi.org/10.1063/1.3586953","url":null,"abstract":"The electrically conductive zinc oxide (ZnO) nanostructures prepared by sol-gel spin coating are presented. This project has been focused on electrical, optical and structural properties of Al doped ZnO thin film. The effects of Al doping concentration at 0∼5 at.% on the Al doped ZnO thin film properties have been investigated. This project involves 3 processes which are thin film preparation, deposition and characterization. The thin films were characterized using Current-Voltage (I–V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties respectively. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The I-V measurement result indicated electrical properties of Al doped ZnO thin film improved with Al doping. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The FESEM investigations shows that the nanoparticles size become smaller and denser as the doping concentration increase.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85802502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700953
R. Jomtarak, C. Teeka, P. Yupapin, J. Ali
Recently, the electron-hole pair generated in 1.06-µm separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 µm, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 µm, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7].
{"title":"Single electron-hole pair generation using dark-bright solitons conversion control","authors":"R. Jomtarak, C. Teeka, P. Yupapin, J. Ali","doi":"10.1109/ESCINANO.2010.5700953","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700953","url":null,"abstract":"Recently, the electron-hole pair generated in 1.06-µm separate-absorber-avalanche (multiplier) InP-based devices [1], SiGe/Si planar waveguides [2] fabricated with a Ge concentration ranging from 2% to 6% and different thicknesses ranging from 200 nm to 2 µm, generating electron-hole pairs with a 100 fs laser pulse emitted at 810 nm, and monitoring the free-carrier absorption transient with a c.w. probe beam at 1.55 µm, bipolar transistors [3], CMOS process [4], InAs-GaSb superlattice (SL) photodiodes [5], resonant microcavity [6], A cavity-QED using a single InAs quantum dot and a high-Q whispering gallery mode [7].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79614850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by fist depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. Many technically important parameters such as barrier height, width of the depletion region, carrier concentration etc were deduced by studying the I–V and C-V characteristics of the heterojunction. The activation energies of ZnTe and CdTe were determined by studying the variation of resistance with ambient temperature and a theoretical band diagram of the heterojunction was drawn using Anderson's model.
{"title":"Fabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodes","authors":"K. V. Bangera, K. Gowrish Rao, G. Shivakumar","doi":"10.1063/1.3587012","DOIUrl":"https://doi.org/10.1063/1.3587012","url":null,"abstract":"The study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by fist depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. Many technically important parameters such as barrier height, width of the depletion region, carrier concentration etc were deduced by studying the I–V and C-V characteristics of the heterojunction. The activation energies of ZnTe and CdTe were determined by studying the variation of resistance with ambient temperature and a theoretical band diagram of the heterojunction was drawn using Anderson's model.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83474560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701046
Tai Boon Kai, Z. Abdul Majid, S. Shahir
Multi-walled carbon nanotubes (MWCNTs) exhibit unique structural, electrical, mechanical, electrochemical, and chemical properties [1]. Moreover, the possibility of modifying their surface properties through different methods has stimulated increasing interest in their application as components in biosensors. In this sense, it is possible to employ carbon nanotubes as support to immobilize enzymes.
{"title":"Covalent immobilization of tyrosinase onto commercial multi-walled carbon nanotubes and its effect on enzymatic activity","authors":"Tai Boon Kai, Z. Abdul Majid, S. Shahir","doi":"10.1109/ESCINANO.2010.5701046","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701046","url":null,"abstract":"Multi-walled carbon nanotubes (MWCNTs) exhibit unique structural, electrical, mechanical, electrochemical, and chemical properties [1]. Moreover, the possibility of modifying their surface properties through different methods has stimulated increasing interest in their application as components in biosensors. In this sense, it is possible to employ carbon nanotubes as support to immobilize enzymes.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77338899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, we propose a design methodology of 3.1–10.6GHz Ultra-wideband (UWB) Distributed Low Noise Amplifier using standard TSMC 0.18um CMOS technology. The four cells DLNA, each cell contains cascode architecture, can be use in broadband applications. The proposed distributed low noise amplifier has an appropriate input and output matching over the full band of 3.1–10.6 GHz. We achieve acceptable results for low noise amplifier as a flat power gain of 12dB (S21) from 3.1 to 10.6GHz, which is ripple only ±0.3 dB over the full UWB band. The proposed DLNA has an excellent linear behavior. The third intercept point (IIP3) of the proposed DLNA is +2dBm and P1dBin is −12dBm. An input impedance matching is <−15 dB (S11) and an output impedance matching of < −15 dB (S22) over the entire band. This LNA achieves the minimum noise figure of 2.8dB.
在本文中，我们提出了一种3.1-10.6GHz超宽带(UWB)分布式低噪声放大器的设计方法，该放大器采用标准台积电0.18um CMOS技术。四个单元DLNA，每个单元包含级联编码架构，可用于宽带应用。所提出的分布式低噪声放大器在3.1-10.6 GHz全频段内具有合适的输入输出匹配。我们在3.1至10.6GHz范围内获得了12dB (S21)的平坦功率增益，在整个UWB频段内纹波仅为±0.3 dB，从而获得了可接受的低噪声放大器结果。所提出的DLNA具有良好的线性特性。该DLNA的第三个截距点(IIP3)为+2dBm, P1dBin为- 12dBm。输入阻抗匹配为<−15 dB (S11)，输出阻抗匹配为<−15db (S22)在整个频带。该LNA的最小噪声系数为2.8dB。
{"title":"A linear 0.18um CMOS Distributed Low Noise Amplifier from 3.1 to 10.6 GHz with cascode cells","authors":"S. Shamsadini, F. Kashani, Neda Bathaei","doi":"10.1063/1.3586976","DOIUrl":"https://doi.org/10.1063/1.3586976","url":null,"abstract":"In this paper, we propose a design methodology of 3.1–10.6GHz Ultra-wideband (UWB) Distributed Low Noise Amplifier using standard TSMC 0.18um CMOS technology. The four cells DLNA, each cell contains cascode architecture, can be use in broadband applications. The proposed distributed low noise amplifier has an appropriate input and output matching over the full band of 3.1–10.6 GHz. We achieve acceptable results for low noise amplifier as a flat power gain of 12dB (S21) from 3.1 to 10.6GHz, which is ripple only ±0.3 dB over the full UWB band. The proposed DLNA has an excellent linear behavior. The third intercept point (IIP3) of the proposed DLNA is +2dBm and P1dBin is −12dBm. An input impedance matching is <−15 dB (S11) and an output impedance matching of < −15 dB (S22) over the entire band. This LNA achieves the minimum noise figure of 2.8dB.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90369090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The benefits of developing Vertical MOSFETs compared with Planar MOSFETs have been recognized for past decades as the alternative for MOSFET downscaling to nanoscale. The prominent advantages of vertical MOSFETs are higher current drive, enhanced short channel immunity, higher reliability and increased packing density, thus promising new opportunities for scaling and advanced design [1–2]. In addition, Double Gate (DG) Vertical MOSFETs reduced the SCEs. The most promising concepts in this direction are double and surround gate MOSFETs [3].
{"title":"The influence of body-tied and floating-body structure in Double Gate Vertical n-MOSFET","authors":"N. Alias, M. Riyadi, K. Abdullah, R. Ismail","doi":"10.1063/1.3586972","DOIUrl":"https://doi.org/10.1063/1.3586972","url":null,"abstract":"The benefits of developing Vertical MOSFETs compared with Planar MOSFETs have been recognized for past decades as the alternative for MOSFET downscaling to nanoscale. The prominent advantages of vertical MOSFETs are higher current drive, enhanced short channel immunity, higher reliability and increased packing density, thus promising new opportunities for scaling and advanced design [1–2]. In addition, Double Gate (DG) Vertical MOSFETs reduced the SCEs. The most promising concepts in this direction are double and surround gate MOSFETs [3].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88671967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon Nanotubes based sensors are gaining popularity due to their high selectivity, sensitivity, fast response and recovery time, low operating temperatures and low power consumption. However, due to a strong sp2 carbon-carbon bonding within CNTs, the interaction between defect free CNT walls and gas molecules had been expected to be relatively weak and consequently, the electronic transport properties of the nanotubes are insensitive to the exposure of CNTs to various gas molecules.
{"title":"Ab initio study of topological defects in single walled carbon nanotubes and their effect on gas sensing mechanism","authors":"A. Srirangarajan, M. Upadhyay Kahaly","doi":"10.1063/1.3587023","DOIUrl":"https://doi.org/10.1063/1.3587023","url":null,"abstract":"Carbon Nanotubes based sensors are gaining popularity due to their high selectivity, sensitivity, fast response and recovery time, low operating temperatures and low power consumption. However, due to a strong sp2 carbon-carbon bonding within CNTs, the interaction between defect free CNT walls and gas molecules had been expected to be relatively weak and consequently, the electronic transport properties of the nanotubes are insensitive to the exposure of CNTs to various gas molecules.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90600656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The emerging of nanotechnology lately has contributes to a numerous study in nano discipline especially in synthesizing nanomaterial, describing the mechanism and examining its behavior as to further utilizing it into a device. One of interesting material to be study is Zinc Oxide (ZnO) which is a well known (II–VI) compound semiconductor possessing hexagonal wurtzite structure. It has receives a lot of attention due to its wide band gap (3.37 eV), high exciton binding energy (60 meV at room temperature), transparent conductivity, bio-compatibility and bio-safety enabling ZnO to be employed as an optoelectronic device, gas sensor, catalyst, solar cell [1] and biomaterial. ZnO nanostructures such as nanorod, nanobelt, nanoflake, nanoflowers and nanoparticles exhibit different properties from the bulk. Hence, intensively research on the preparative techniques has been reported by many groups. Techniques based on physical vapor deposition such as pulsed laser deposition (PLD), sputtering and thermal decomposition usually require expensive equipment, highly cost maintenance and limited to small scale production. Whereas, wet chemical synthesis such as sol-gel, hydrothermal, sonochemical and precipitation often yields large-scale production, low cost equipment and inexpensive raw material.
{"title":"Formation of ZnO nanocrystalline via facile non-hydrolytic route","authors":"M. Ooi, A. Azlan, M. Abdullah","doi":"10.1063/1.3586943","DOIUrl":"https://doi.org/10.1063/1.3586943","url":null,"abstract":"The emerging of nanotechnology lately has contributes to a numerous study in nano discipline especially in synthesizing nanomaterial, describing the mechanism and examining its behavior as to further utilizing it into a device. One of interesting material to be study is Zinc Oxide (ZnO) which is a well known (II–VI) compound semiconductor possessing hexagonal wurtzite structure. It has receives a lot of attention due to its wide band gap (3.37 eV), high exciton binding energy (60 meV at room temperature), transparent conductivity, bio-compatibility and bio-safety enabling ZnO to be employed as an optoelectronic device, gas sensor, catalyst, solar cell [1] and biomaterial. ZnO nanostructures such as nanorod, nanobelt, nanoflake, nanoflowers and nanoparticles exhibit different properties from the bulk. Hence, intensively research on the preparative techniques has been reported by many groups. Techniques based on physical vapor deposition such as pulsed laser deposition (PLD), sputtering and thermal decomposition usually require expensive equipment, highly cost maintenance and limited to small scale production. Whereas, wet chemical synthesis such as sol-gel, hydrothermal, sonochemical and precipitation often yields large-scale production, low cost equipment and inexpensive raw material.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88295370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701031
R. Mishr, Bahniman Ghosh, S. Banerjee
Investigation on Tunnel FETs in recent years have proved them to be better than conventional MOSFETs lower subthreshold swing, lower power consumption and their scaling is not limited by quantum mechanical effects [1]. Improvement in the on-current of TFETs has been proposed by the use of SiGe layer on the source side [2]. This paper investigates the effect of different Ge mole fractions on the performance of various benchmark circuits (inverter, inverter with constant load, 8 bit ripple carry adder (RCA), 5 stage ring oscillator, 10 stage NAND and NOR chain). A method of the Ion/Ioff ratio of TFETs with high Ge composition, by grading the Ge composition has also been suggested.
{"title":"Device and circuit performance evaluation and improvement of SiGe Tunnel FETs","authors":"R. Mishr, Bahniman Ghosh, S. Banerjee","doi":"10.1109/ESCINANO.2010.5701031","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701031","url":null,"abstract":"Investigation on Tunnel FETs in recent years have proved them to be better than conventional MOSFETs lower subthreshold swing, lower power consumption and their scaling is not limited by quantum mechanical effects [1]. Improvement in the on-current of TFETs has been proposed by the use of SiGe layer on the source side [2]. This paper investigates the effect of different Ge mole fractions on the performance of various benchmark circuits (inverter, inverter with constant load, 8 bit ripple carry adder (RCA), 5 stage ring oscillator, 10 stage NAND and NOR chain). A method of the Ion/Ioff ratio of TFETs with high Ge composition, by grading the Ge composition has also been suggested.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75880650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md. Eaqub Ali, U. Hashim, Md. Fazul Bari, T. S. Dhahi
Selective detection of specific DNA sequences is increasingly getting momentum in clinical diagnosis, pathology, genetics [1–3] and food analysis [4, 5]. The polymerase chain reaction (PCR) is a commonly used technique to amplify specific sequence segment in nearly all DNA-based assays [3]. The use of PCR addresses both the sensitivity issues and sample purification steps producing a large quantity DNA from as little as single copy. However, post- PCR analysis of PCR amplified DNA involves complex and time consuming electrophoresis, blot analysis or sequencing [3].
{"title":"Colorimetric sensor for label free detection of porcine PCR product","authors":"Md. Eaqub Ali, U. Hashim, Md. Fazul Bari, T. S. Dhahi","doi":"10.1063/1.3587027","DOIUrl":"https://doi.org/10.1063/1.3587027","url":null,"abstract":"Selective detection of specific DNA sequences is increasingly getting momentum in clinical diagnosis, pathology, genetics [1–3] and food analysis [4, 5]. The polymerase chain reaction (PCR) is a commonly used technique to amplify specific sequence segment in nearly all DNA-based assays [3]. The use of PCR addresses both the sensitivity issues and sample purification steps producing a large quantity DNA from as little as single copy. However, post- PCR analysis of PCR amplified DNA involves complex and time consuming electrophoresis, blot analysis or sequencing [3].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89943263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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