Atika Atira Mohamad Shamsir, M. Z. Mat Jafri, L. H. San
Electronic speckle pattern interferometry (ESPI) method is a wholefield, non destructive measurement method widely used in the industries such as detection of defects on metal bodies such as cars or aeroplanes, detection of defects in intergrated circuits in digital electronics components and in the preservation of priceless artwork. In this research field, this method is widely used to develop algorithms for combining multispectral laser sources and to develop a new laboratory setup for implementing the multispectral speckle interferometry.
{"title":"Development of speckle interferometry algorithm and system","authors":"Atika Atira Mohamad Shamsir, M. Z. Mat Jafri, L. H. San","doi":"10.1063/1.3586969","DOIUrl":"https://doi.org/10.1063/1.3586969","url":null,"abstract":"Electronic speckle pattern interferometry (ESPI) method is a wholefield, non destructive measurement method widely used in the industries such as detection of defects on metal bodies such as cars or aeroplanes, detection of defects in intergrated circuits in digital electronics components and in the preservation of priceless artwork. In this research field, this method is widely used to develop algorithms for combining multispectral laser sources and to develop a new laboratory setup for implementing the multispectral speckle interferometry.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79243749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The preparation of porous semiconductors has attracted a great deal of research interest in recent years, primarily due to the potential for intentional engineering of properties not readily obtained in the corresponding crystalline precursors as well as the potential applications in optoelectronics, chemical and biochemical sensing [1–4]. When porosity is formed, these materials exhibit various special optical features, for instance, the shift of bandgap [5], luminescence intensity enhancement [6], as well as photoresponse improvement [7]. To date, porous silicon (Si) receives enormous attention and has been investigated most intensively; however the instability of physical properties has prevented it from large scale applications [8]. Thus, this leads to the development of other porous semiconductors, for instance, the wide bandgap materials such as GaN [2].
{"title":"Effect of porosity on the characteristics of GaN grown on sapphire","authors":"A. Mahmood, Z. Hassan, F. Yam, L. S. Chuah","doi":"10.1063/1.3586952","DOIUrl":"https://doi.org/10.1063/1.3586952","url":null,"abstract":"The preparation of porous semiconductors has attracted a great deal of research interest in recent years, primarily due to the potential for intentional engineering of properties not readily obtained in the corresponding crystalline precursors as well as the potential applications in optoelectronics, chemical and biochemical sensing [1–4]. When porosity is formed, these materials exhibit various special optical features, for instance, the shift of bandgap [5], luminescence intensity enhancement [6], as well as photoresponse improvement [7]. To date, porous silicon (Si) receives enormous attention and has been investigated most intensively; however the instability of physical properties has prevented it from large scale applications [8]. Thus, this leads to the development of other porous semiconductors, for instance, the wide bandgap materials such as GaN [2].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80841473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701018
T. Amran, M. Hashim, N. K. Al-Obaidi
Recent advances in nanotechnology that allow metal structures to be built at a nanometer scale have expedited the implementation of the surface-plasmon (SP) resonance effect which effect concentrates and guides light into structures that are smaller than the wavelength of the propagating light. The numerous researchers have successfully shown that the wavelength at which the extinction reaches its maximum can be selectively tuned by adjusting the metal particle size, shape, volume fraction, interparticle distance, and the dielectric properties of the metal as well as that of the surrounding medium [1].
{"title":"Silver nanoclusters formation by using thermal annealing on porous GaAs","authors":"T. Amran, M. Hashim, N. K. Al-Obaidi","doi":"10.1109/ESCINANO.2010.5701018","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701018","url":null,"abstract":"Recent advances in nanotechnology that allow metal structures to be built at a nanometer scale have expedited the implementation of the surface-plasmon (SP) resonance effect which effect concentrates and guides light into structures that are smaller than the wavelength of the propagating light. The numerous researchers have successfully shown that the wavelength at which the extinction reaches its maximum can be selectively tuned by adjusting the metal particle size, shape, volume fraction, interparticle distance, and the dielectric properties of the metal as well as that of the surrounding medium [1].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77941067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technology exploration is carried out through the modeling of zigzag carbon nanotube field-effect-transistors (z-CNTFETs) and armchair graphene nanoribbon field-effect-transistors (a-GNRFETs) with top gate design. The devices are simulated using a top-of-the-barrier model [1] where the energy dispersion for CNTs and GNRs is based on the tight-binding approximation [2]. The structure of these transistors is shown in Fig. 1. In armchair GNRs, two Dirac points (K and K′) are merged into one valley (gv=1), whereas for CNTs two discrete valleys (gv=2) are included [3]. Unlike gapless two-dimensional (2D) graphene, nanometer-wide GNRs can have semiconducting characteristics due to quantum confinement by tailoring its width as illustrated Fig. 2. Table I shows the contact, channel and quantum resistance for a GNR and a CNT computated using Ron (L) = h/(2gvq2) × (L/ℓ) + h/(2gvq2) + Rnc where ℓ is the electron mean free path (MFP) given as ℓ=(1/λAP+1/λOP+1/λEDGE(GNR))−1, Rnc is the non-transparent resistance, Rc=RQ+ Rnc is the contact resistance and RQ is the quantum resistance given by h/(2gvq2) [4]. In addition, the MFP of optical phonon, acoustic phonon and edge scattering are as follows; λOP,300 ≈15d, λAP,300 ≈ 280d, λEDGE= 15nm where d is diameter [5–6].
{"title":"Performance prediction of graphene-nanoribbon and carbon nanotube transistors","authors":"M. Tan, G. Amaratunga","doi":"10.1063/1.3587020","DOIUrl":"https://doi.org/10.1063/1.3587020","url":null,"abstract":"Technology exploration is carried out through the modeling of zigzag carbon nanotube field-effect-transistors (z-CNTFETs) and armchair graphene nanoribbon field-effect-transistors (a-GNRFETs) with top gate design. The devices are simulated using a top-of-the-barrier model [1] where the energy dispersion for CNTs and GNRs is based on the tight-binding approximation [2]. The structure of these transistors is shown in Fig. 1. In armchair GNRs, two Dirac points (K and K′) are merged into one valley (gv=1), whereas for CNTs two discrete valleys (gv=2) are included [3]. Unlike gapless two-dimensional (2D) graphene, nanometer-wide GNRs can have semiconducting characteristics due to quantum confinement by tailoring its width as illustrated Fig. 2. Table I shows the contact, channel and quantum resistance for a GNR and a CNT computated using R<inf>on</inf> (L) = h/(2g<inf>v</inf>q<sup>2</sup>) × (L/ℓ) + h/(2g<inf>v</inf>q<sup>2</sup>) + R<inf>nc</inf> where ℓ is the electron mean free path (MFP) given as ℓ=(1/λ<inf>AP</inf>+1/λ<inf>OP</inf>+1/λ<inf>EDGE</inf>(GNR))<sup>−1</sup>, R<inf>nc</inf> is the non-transparent resistance, R<inf>c</inf>=R<inf>Q</inf>+ R<inf>nc</inf> is the contact resistance and R<inf>Q</inf> is the quantum resistance given by h/(2g<inf>v</inf>q<sup>2</sup>) [4]. In addition, the MFP of optical phonon, acoustic phonon and edge scattering are as follows; λ<inf>OP,300</inf> ≈15d, λ<inf>AP,300</inf> ≈ 280d, λ<inf>EDGE</inf>= 15nm where d is diameter [5–6].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73658227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ballistic transport is collision-free carriers drift in a conducting channel whose ballistic length LB is smaller than the scattering-limited mean free path ℓB. In such channels, the probability of scattering is still finite. The probability that a carrier after being injected from the Ohmic contacts will undergo collision in traversing a ballistic length LB is exp (−LB /ℓB. The probability that it will go ballistic (collision-free) is (1- exp (−LB/ ℓB)). This modifies the traditional long-channel mobility µ∞ to a size-limited mobility µL given by [1] µL = µ∞[1- exp(−LB / ℓB)] The ballistic mean free path ℓ differs from the channel mean free path ℓ∞ as contacts play a predominant role in the ballistic transport. The carriers are injected from the metallic contacts at a Fermi velocity νF for which the probability of tunnelling through the metal-semiconductor contact is the highest. This Fermi velocity is 2.0 × 106 m/s for the Fermi energy of 11.6 eV for an Al contact [2]. With this injection velocity νinj the ballistic mean free path is given by ℓB = ℓ∞ (νinj/ νm) where νm is the mobility velocity appropriate to 2-D electron gas [3]. ℓB > ℓ∞ was identified in the experiments of Luskawoski et. al [4]. A pocket mean free path ℓP was added to ℓ∞ to get a ballistic mean free path ℓB =ℓ℞ +ࡁP that is not consistent with the scattering theory for two reasons. Firstly, mean free paths from two distinct regions cannot be combined. Secondly, the inverse mean free paths are normally combined as ℓB−1 = ℓ∞−1 + ℓP−1
{"title":"Mobility diminution in a nano-MOSFET due to carrier injection from the ohmic contacts","authors":"M. Riyadi, M. Tan, Abdul Manaf Hashima, V. Arora","doi":"10.1063/1.3586978","DOIUrl":"https://doi.org/10.1063/1.3586978","url":null,"abstract":"Ballistic transport is collision-free carriers drift in a conducting channel whose ballistic length L<inf>B</inf> is smaller than the scattering-limited mean free path ℓ<inf>B</inf>. In such channels, the probability of scattering is still finite. The probability that a carrier after being injected from the Ohmic contacts will undergo collision in traversing a ballistic length L<inf>B</inf> is exp (−L<inf>B</inf> /ℓ<inf>B</inf>. The probability that it will go ballistic (collision-free) is (1- exp (−L<inf>B</inf>/ ℓ<inf>B</inf>)). This modifies the traditional long-channel mobility µ<inf>∞</inf> to a size-limited mobility µ<inf>L</inf> given by [1] µ<inf>L</inf> = µ<inf>∞</inf>[1- exp(−L<inf>B</inf> / ℓ<inf>B</inf>)] The ballistic mean free path ℓ differs from the channel mean free path ℓ<inf>∞</inf> as contacts play a predominant role in the ballistic transport. The carriers are injected from the metallic contacts at a Fermi velocity ν<inf>F</inf> for which the probability of tunnelling through the metal-semiconductor contact is the highest. This Fermi velocity is 2.0 × 10<sup>6</sup> m/s for the Fermi energy of 11.6 eV for an Al contact [2]. With this injection velocity ν<inf>inj</inf> the ballistic mean free path is given by ℓ<inf>B</inf> = ℓ<inf>∞</inf> (ν<inf>inj</inf>/ ν<inf>m</inf>) where ν<inf>m</inf> is the mobility velocity appropriate to 2-D electron gas [3]. ℓ<inf>B</inf> > ℓ<inf>∞</inf> was identified in the experiments of Luskawoski et. al [4]. A pocket mean free path ℓ<inf>P</inf> was added to ℓ<inf>∞</inf> to get a ballistic mean free path ℓ<inf>B</inf> =ℓ<inf>℞</inf> +ࡁ<inf>P</inf> that is not consistent with the scattering theory for two reasons. Firstly, mean free paths from two distinct regions cannot be combined. Secondly, the inverse mean free paths are normally combined as ℓ<inf>B</inf><sup>−1</sup> = ℓ<inf>∞</inf><sup>−1</sup> + ℓ<inf>P</inf> <sup>−1</sup>","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81223337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701045
I. Hamammu, Kamarulazizi Ibrahim
Isotropic texturing of silicon is among the key issues in solar cell fabrication. Attempts have been made using mechanical, plasma and other techniques [1–3]. This work reports a study on the possibility of applying acidic texturing using in the texturing of crystalline silicon solar cell. Alkaline texturing is widely used in solar cell processing, to lower the reflectance of the cell surface.
{"title":"Nanotexturing of silicon solar cells using acids","authors":"I. Hamammu, Kamarulazizi Ibrahim","doi":"10.1109/ESCINANO.2010.5701045","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701045","url":null,"abstract":"Isotropic texturing of silicon is among the key issues in solar cell fabrication. Attempts have been made using mechanical, plasma and other techniques [1–3]. This work reports a study on the possibility of applying acidic texturing using in the texturing of crystalline silicon solar cell. Alkaline texturing is widely used in solar cell processing, to lower the reflectance of the cell surface.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86557528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots —QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy state. Although various formation techniques have been developed so far to achieve high-density and nanometer-size. In general silicon QDs can be formed on non-crystalline substrates, such as glass. Si quantum dots have been successfully grown on corning glass (7059) substrate. This nucleation starts to appear at first 7 min of QDs growth formation until stable conditions of the dots. The measurement results estimated average dots size to be 53 nm is confirmed by using AFM.
{"title":"Formation and characterization of silicon self-assembled nanodots","authors":"F. A. Idrees, S. Sakrani, Z. Othaman","doi":"10.1063/1.3587011","DOIUrl":"https://doi.org/10.1063/1.3587011","url":null,"abstract":"One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots —QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy state. Although various formation techniques have been developed so far to achieve high-density and nanometer-size. In general silicon QDs can be formed on non-crystalline substrates, such as glass. Si quantum dots have been successfully grown on corning glass (7059) substrate. This nucleation starts to appear at first 7 min of QDs growth formation until stable conditions of the dots. The measurement results estimated average dots size to be 53 nm is confirmed by using AFM.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84399728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700983
A. Ensafi, S. Dadkhah-Tehrani, H. Karimi-Maleh
Carbon nanotubes (CNTs) have received considerable attention in electrochemistry for a long time [1]. Epinephrine (EP) is an important catecholamine neurotransmitter in the mammalian central nervous system and biological body fluids [2]. It has been used for the treatment of myocardial infarction, hypertension, bronchial asthma, cardiac arrest, and cardiac surgery in clinics. Therefore, a simple, fast, and sensitive method is necessary for its determination in both biological fluids and pharmaceutical preparations. Uric acid (UA) and ascorbic acid (AA) commonly coexist in such biological fluids as blood and urine. However, a major obstacle usually encountered in the detection of EP is the interference of UA and AA, which are usually present at high concentrations and can be oxidized at a potential close to that of EP. Thus, their simultaneous determinations have always been considered as a serious challenge in these studies.
{"title":"Poly(xylenol blue) modified multiwall carbon nanotubes-glassy carbon electrode for simultaneous determination of ascorbic acid, epinephrine, and uric acid by differential pulse voltammetry","authors":"A. Ensafi, S. Dadkhah-Tehrani, H. Karimi-Maleh","doi":"10.1109/ESCINANO.2010.5700983","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700983","url":null,"abstract":"Carbon nanotubes (CNTs) have received considerable attention in electrochemistry for a long time [1]. Epinephrine (EP) is an important catecholamine neurotransmitter in the mammalian central nervous system and biological body fluids [2]. It has been used for the treatment of myocardial infarction, hypertension, bronchial asthma, cardiac arrest, and cardiac surgery in clinics. Therefore, a simple, fast, and sensitive method is necessary for its determination in both biological fluids and pharmaceutical preparations. Uric acid (UA) and ascorbic acid (AA) commonly coexist in such biological fluids as blood and urine. However, a major obstacle usually encountered in the detection of EP is the interference of UA and AA, which are usually present at high concentrations and can be oxidized at a potential close to that of EP. Thus, their simultaneous determinations have always been considered as a serious challenge in these studies.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84579479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700945
Y. B. Kar, D. Bradley
We report the impact of inserting a 10 nm thickness interlayer between the poly(3,4-ethylenedioxythiophene):poly(styrenesulphonate) (PEDOT:PSS) and light-emitting layers on degradation, in particular the electrical stability of the injecting electrodes, in encapsulated polymer light emitting diodes (PLEDs). Continuous electrical stress testing is carried out to study the time evolution of dark injection hole transients for devices with and without a poly [2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-secbutylphenyl)imino)-1,4-phenylene)] (TFB) interlayer. A Sumitomo Chemical Company dibenzothiophene phenylenediamine copolymer (SC002) was used as light emitting layer and PLED characteristics with and without the interlayer are discussed together with lifetime data.
{"title":"Electrical stability of PLEDs","authors":"Y. B. Kar, D. Bradley","doi":"10.1109/ESCINANO.2010.5700945","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700945","url":null,"abstract":"We report the impact of inserting a 10 nm thickness interlayer between the poly(3,4-ethylenedioxythiophene):poly(styrenesulphonate) (PEDOT:PSS) and light-emitting layers on degradation, in particular the electrical stability of the injecting electrodes, in encapsulated polymer light emitting diodes (PLEDs). Continuous electrical stress testing is carried out to study the time evolution of dark injection hole transients for devices with and without a poly [2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-secbutylphenyl)imino)-1,4-phenylene)] (TFB) interlayer. A Sumitomo Chemical Company dibenzothiophene phenylenediamine copolymer (SC002) was used as light emitting layer and PLED characteristics with and without the interlayer are discussed together with lifetime data.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87442329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nanosphere lithography, as one of the high-resolution and cost-effective technologies, has attracted much research effort from both industry and academics [1]. It utilizes the self-organization of monodispersed nanospheres as an inverse pattern whose deposition channels are defined by interstitial voids between nanospheres [1]. The size of such deposition channels in the pattern is proportional to the size of the spheres. In this study, the modifying of nanospheres structures by plasma treatments to the fabricated nanoparticles arrays by Nanosphere Lithography (NSL) techniques to create Periodic Particles arrays (PPAs) with different size, shape and orientation. UV spectra of protein that immobilized to the nanoparticles arrays under UV spectrums were studied.
{"title":"UV spectra of amino acid in immobilized at nanoparticles formation through Nanosphere Lithography (NSL) by plasma treatment","authors":"F. Mohamad, M. Agam, Hadi Nur","doi":"10.1063/1.3587016","DOIUrl":"https://doi.org/10.1063/1.3587016","url":null,"abstract":"Nanosphere lithography, as one of the high-resolution and cost-effective technologies, has attracted much research effort from both industry and academics [1]. It utilizes the self-organization of monodispersed nanospheres as an inverse pattern whose deposition channels are defined by interstitial voids between nanospheres [1]. The size of such deposition channels in the pattern is proportional to the size of the spheres. In this study, the modifying of nanospheres structures by plasma treatments to the fabricated nanoparticles arrays by Nanosphere Lithography (NSL) techniques to create Periodic Particles arrays (PPAs) with different size, shape and orientation. UV spectra of protein that immobilized to the nanoparticles arrays under UV spectrums were studied.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87876478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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