Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701082
T. Sadoh
Research and development for new semiconductor devices which enable ultrahigh speed operation and ultralow power dissipation are strongly required to overcome the scaling limit of the transistor performance. In line with this, Si-based heterostructure technologies have been widely developed. Recently, we have developed SiGe mixing triggered liquid-phase epitaxy (LPE). This achieves high-mobility Ge single crystals on insulating substrates [1]. The present paper reviews our recent progress in this novel growth technique.
{"title":"High-mobility Ge nano-stripes for next generation Si-CMOS","authors":"T. Sadoh","doi":"10.1109/ESCINANO.2010.5701082","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701082","url":null,"abstract":"Research and development for new semiconductor devices which enable ultrahigh speed operation and ultralow power dissipation are strongly required to overcome the scaling limit of the transistor performance. In line with this, Si-based heterostructure technologies have been widely developed. Recently, we have developed SiGe mixing triggered liquid-phase epitaxy (LPE). This achieves high-mobility Ge single crystals on insulating substrates [1]. The present paper reviews our recent progress in this novel growth technique.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80768438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700956
Tan Lay Theng, H. Hui, C. Sheng, O. Soon, M. T. Sun, Wee Qixun, Soh Chew Beng, Chua Soo Jin
Silicon nanowires (SiNWs) have received great interest because of their excellent electrical, mechanical, and optical properties as well as their potential applications, ranging from nano/micro-electromechanical system to optoelectronics, and biological/chemical sensors [1–2]. One of the common methods to synthesize Si nanowire arrays directly from bulk silicon wafers is through electroless etching. However the difficulties faced in this method are achieving good control over the distribution and size of the nanowires.
{"title":"Dependence of substrate orientation and etching conditions on the formation of Si nanowires","authors":"Tan Lay Theng, H. Hui, C. Sheng, O. Soon, M. T. Sun, Wee Qixun, Soh Chew Beng, Chua Soo Jin","doi":"10.1109/ESCINANO.2010.5700956","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700956","url":null,"abstract":"Silicon nanowires (SiNWs) have received great interest because of their excellent electrical, mechanical, and optical properties as well as their potential applications, ranging from nano/micro-electromechanical system to optoelectronics, and biological/chemical sensors [1–2]. One of the common methods to synthesize Si nanowire arrays directly from bulk silicon wafers is through electroless etching. However the difficulties faced in this method are achieving good control over the distribution and size of the nanowires.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81751960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701062
S. N. Razak, N. Bidin
Silicon thin film is widely used as transistor. It performance depends on it crystal structure. The larger the crystallization the better the current flow. The goal of this work is to enhance the grain size. In the attempt, an amorphous silicon thin film was prepared by low pressure physical vapour deposition (PVD) and dopant by cooper. The silicon film was heat treated for four hours, using conventional oven. The treated silicon film was then annealed by using ultraviolet light of argon fluoride (ArF) excimer laser, at variable energy density.
{"title":"Crystallization of polycrystalline silicon thin film by excimer laser annealing, ELA","authors":"S. N. Razak, N. Bidin","doi":"10.1109/ESCINANO.2010.5701062","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701062","url":null,"abstract":"Silicon thin film is widely used as transistor. It performance depends on it crystal structure. The larger the crystallization the better the current flow. The goal of this work is to enhance the grain size. In the attempt, an amorphous silicon thin film was prepared by low pressure physical vapour deposition (PVD) and dopant by cooper. The silicon film was heat treated for four hours, using conventional oven. The treated silicon film was then annealed by using ultraviolet light of argon fluoride (ArF) excimer laser, at variable energy density.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82346353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. H. Mamat, Z. Khusaimi, M. F. Malik, M. M. Zahidi, M. Mahmood
Vertically aligned Zinc oxide (ZnO) nanostructures become very important and useful materials in nanodevices fabrications due to its outstanding characteristics such as high aspect ratio, high electron mobility and large surface area availability [1,2]. ZnO is categorized to II–VI group compound semiconductor with band gap energy 3.2∼3.3 eV and exciton binding energy of 60 meV. It is wide band gap energy material with hexagonal wurtzite structure (lattice parameter: a = 0.3296 nm and c = 0.52065 nm) which is non-toxic, radiation resisted and abundant. Recently, various kind of ZnO nanostructures growth has been reported including nanorod, nanotube and nanobelt [3–5].
{"title":"Ultra-violet sensing characteristic and field emission properties of vertically aligned aluminum doped zinc oxide nanorod arrays","authors":"M. H. Mamat, Z. Khusaimi, M. F. Malik, M. M. Zahidi, M. Mahmood","doi":"10.1063/1.3587035","DOIUrl":"https://doi.org/10.1063/1.3587035","url":null,"abstract":"Vertically aligned Zinc oxide (ZnO) nanostructures become very important and useful materials in nanodevices fabrications due to its outstanding characteristics such as high aspect ratio, high electron mobility and large surface area availability [1,2]. ZnO is categorized to II–VI group compound semiconductor with band gap energy 3.2∼3.3 eV and exciton binding energy of 60 meV. It is wide band gap energy material with hexagonal wurtzite structure (lattice parameter: a = 0.3296 nm and c = 0.52065 nm) which is non-toxic, radiation resisted and abundant. Recently, various kind of ZnO nanostructures growth has been reported including nanorod, nanotube and nanobelt [3–5].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86930115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
When a laser pulse interacts with material, the material is ablated. Evaporates form plasma plume consisting of a mixture of energetic species including atoms, molecules, electrons, ions, clusters, micron-sized particles, and molten globules. Ions accelerated from the surface of the target form a cone due to their angular distribution and high energy. Energetic ion beams produced during the interaction of ultrahigh-intensity, short laser pulses have many applications ranging from the fast ignition of thermonuclear targets to proton imaging, deep proton lithography, medical physics, and injectors for conventional accelerators [1,2].
{"title":"Detection and investigation of carbon ions induced by Nd:YAG laser using SSNTDs","authors":"R. Qindeel, J. Ali, M. S. Hussain, K. Chaudhary","doi":"10.1063/1.3586984","DOIUrl":"https://doi.org/10.1063/1.3586984","url":null,"abstract":"When a laser pulse interacts with material, the material is ablated. Evaporates form plasma plume consisting of a mixture of energetic species including atoms, molecules, electrons, ions, clusters, micron-sized particles, and molten globules. Ions accelerated from the surface of the target form a cone due to their angular distribution and high energy. Energetic ion beams produced during the interaction of ultrahigh-intensity, short laser pulses have many applications ranging from the fast ignition of thermonuclear targets to proton imaging, deep proton lithography, medical physics, and injectors for conventional accelerators [1,2].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87448270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701087
A. Ismail
Separation by selective transport through membranes is a dynamic and rapidly growing field. However, the existing of polymeric and inorganic membrane materials are inadequate in terms of sustaining the membrane performance for long term operation under high pressure and high concentration of impurities to be separated. These are some of the key issues to be addressed by scientist and engineers to fully exploit membrane technology in a broader perspective. Thus, to address the key issues, Mixed Matrix Membrane (MMM) has developed. MMM composed of homogeneously interpenetrating polymeric and inorganic particle matrices offers a viable and promising route that has been rapidly researched and is an attractive candidate for membrane-based separations processes. The combination of polymer and inorganic filler in MMM resulted in a synergistic effect in which the rigid adsorptive porous type inorganic phase provides superior separation properties, meanwhile the presence of flexible polymer enables the ideal membrane forming hence solving the problem of fragility inherent found in the inorganic membranes. In the fabrication of MMMs, the polymeric layer is normally tightly packed with nano-inorganic fillers such as zeolite, carbon molecular sieve as well as carbon nanotube to form a dense region of mixed matrix layer. These nanoporous materials possess the shape and size selective nature and hence allow molecular sieving discrimination by permitting smaller sized penetrates to diffuse at higher rate than that of larger sized. The practical utilization of MMMs for particular separation processes can only be achieved only if the intrinsic properties of the MMM is fully optimized. In this aspect, the selection of proper filler and adaption of modification to enhance the filler compatibility are crucial steps to be taken into consideration in order to facilitate and also bring a new insight into a wider application of MMMs.
{"title":"Nanostructured materials in advanced membrane technology for separation processes","authors":"A. Ismail","doi":"10.1109/ESCINANO.2010.5701087","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701087","url":null,"abstract":"Separation by selective transport through membranes is a dynamic and rapidly growing field. However, the existing of polymeric and inorganic membrane materials are inadequate in terms of sustaining the membrane performance for long term operation under high pressure and high concentration of impurities to be separated. These are some of the key issues to be addressed by scientist and engineers to fully exploit membrane technology in a broader perspective. Thus, to address the key issues, Mixed Matrix Membrane (MMM) has developed. MMM composed of homogeneously interpenetrating polymeric and inorganic particle matrices offers a viable and promising route that has been rapidly researched and is an attractive candidate for membrane-based separations processes. The combination of polymer and inorganic filler in MMM resulted in a synergistic effect in which the rigid adsorptive porous type inorganic phase provides superior separation properties, meanwhile the presence of flexible polymer enables the ideal membrane forming hence solving the problem of fragility inherent found in the inorganic membranes. In the fabrication of MMMs, the polymeric layer is normally tightly packed with nano-inorganic fillers such as zeolite, carbon molecular sieve as well as carbon nanotube to form a dense region of mixed matrix layer. These nanoporous materials possess the shape and size selective nature and hence allow molecular sieving discrimination by permitting smaller sized penetrates to diffuse at higher rate than that of larger sized. The practical utilization of MMMs for particular separation processes can only be achieved only if the intrinsic properties of the MMM is fully optimized. In this aspect, the selection of proper filler and adaption of modification to enhance the filler compatibility are crucial steps to be taken into consideration in order to facilitate and also bring a new insight into a wider application of MMMs.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87505934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700963
M. Zobir Hussein, S. Abdul Ghani, A. Abdullah
Hydrotalcite-like materials or layered double hydroxides (LDHs) are popular inorganic hosts for the formation of organic-inorganoc hybrid type nanolayered composites, or also referred to as nanocomposite materials [1]. Levodopa, 3-(3,4-dihydroxyphenil)-L-alanine (Fig. 1) is an effective precursor to several neurologically important catecholamines and also is one of the major pharmaceutical agents for the treatment of the main symptoms of Parkinson's disease [2]. The intercalation of the levodopa into an inorganic host, LDH can be used as a means to form a new organic-inorganic hybrid material. The resulting nanocomposite present a potential material for controlled release formulations (CRF) for the pharmaceutical active agent.
类水滑石材料或层状双氢氧化物(LDHs)是形成有机-无机杂化型纳米层状复合材料或也称为纳米复合材料的常用无机寄主[1]。左旋多巴，3-(3,4-二羟基酚)- l -丙氨酸(图1)是几种重要神经系统儿茶酚胺的有效前体，也是治疗帕金森病主要症状的主要药物之一[2]。将左旋多巴插入到无机寄主中，LDH可以作为一种形成新的有机-无机杂化材料的手段。所得到的纳米复合材料为该药物活性物质的控释制剂(CRF)提供了一种潜在的材料。
{"title":"Kinetic release of levodopa from Zn/Al-layered double hydroxide host","authors":"M. Zobir Hussein, S. Abdul Ghani, A. Abdullah","doi":"10.1109/ESCINANO.2010.5700963","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700963","url":null,"abstract":"Hydrotalcite-like materials or layered double hydroxides (LDHs) are popular inorganic hosts for the formation of organic-inorganoc hybrid type nanolayered composites, or also referred to as nanocomposite materials [1]. Levodopa, 3-(3,4-dihydroxyphenil)-L-alanine (Fig. 1) is an effective precursor to several neurologically important catecholamines and also is one of the major pharmaceutical agents for the treatment of the main symptoms of Parkinson's disease [2]. The intercalation of the levodopa into an inorganic host, LDH can be used as a means to form a new organic-inorganic hybrid material. The resulting nanocomposite present a potential material for controlled release formulations (CRF) for the pharmaceutical active agent.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85853081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5700995
S. F. Abd Rahman, Nihad K. Ali Al-Obaidi, A. M. Hashim
Graphene has attracted enormous attention as a possible candidate to replace Silicon in CMOS technology owing to its unique and superior carrier mobility. It was found that graphene is a zero bandgap semiconductor and its carrier behaves as a massless Dirac fermion with mobility as high as 200,000 cm2/Vs, which is more than 100 times higher than that of Silicon [1]. This makes graphene as a suitable material for the realization of ultra-high speed electronic device with low power consumption. In order to fully utilize the potential of graphene, issues such as synthesis method of graphene, ohmic and schottky contact formation and bandgap modulation method have been extensively studied.
{"title":"Effects of various metal contacts on contact resistance and barrier height of metal/graphene interface","authors":"S. F. Abd Rahman, Nihad K. Ali Al-Obaidi, A. M. Hashim","doi":"10.1109/ESCINANO.2010.5700995","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5700995","url":null,"abstract":"Graphene has attracted enormous attention as a possible candidate to replace Silicon in CMOS technology owing to its unique and superior carrier mobility. It was found that graphene is a zero bandgap semiconductor and its carrier behaves as a massless Dirac fermion with mobility as high as 200,000 cm2/Vs, which is more than 100 times higher than that of Silicon [1]. This makes graphene as a suitable material for the realization of ultra-high speed electronic device with low power consumption. In order to fully utilize the potential of graphene, issues such as synthesis method of graphene, ohmic and schottky contact formation and bandgap modulation method have been extensively studied.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80630678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701089
M. Othman
Nanotechnology is a generic technology with a vast array of applications. MIMOS is looking into incorporating nanotechnology or nanomaterials in particular to realize a new generation of high precision sensor systems by leveraging on the large surface area of nanomaterials. The main focus will in bio and chemical sensors with high precision and low power operation [1–5]. One of the critical issues in the sensor R&D is the selectivity of the sensors to a particular analyte. In order to achieve a high selectivity and to avoid erroneous output reading, MIMOS will be exploring methods of functionalization these sensing elements. This is a specialized new area that will have to be researched for realization of sensors.
{"title":"Nanosensors for ubiquitous network","authors":"M. Othman","doi":"10.1109/ESCINANO.2010.5701089","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701089","url":null,"abstract":"Nanotechnology is a generic technology with a vast array of applications. MIMOS is looking into incorporating nanotechnology or nanomaterials in particular to realize a new generation of high precision sensor systems by leveraging on the large surface area of nanomaterials. The main focus will in bio and chemical sensors with high precision and low power operation [1–5]. One of the critical issues in the sensor R&D is the selectivity of the sensors to a particular analyte. In order to achieve a high selectivity and to avoid erroneous output reading, MIMOS will be exploring methods of functionalization these sensing elements. This is a specialized new area that will have to be researched for realization of sensors.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83483352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-12-01DOI: 10.1109/ESCINANO.2010.5701025
K. Yasui, H. Miura, Jyunpei Eto, Y. Narita, A. M. Hashim
Silicon carbide (SiC) is a wide bandgap semiconductor and it exhibits excellent electronic and chemical properties. Fabrication of SiC devices on Si wafers of large diameter is desired to reduce their production cost. For the fabrication of electronic devices in the SiC layer, however, an electronic isolation between SiC and Si substrate is required because of the leakage current between the SiC and the substrate. Therefore the application of the SOI (Si on insulator) technique to the SiC on insulator (SiCOI) structure has been eagerly investigated [1, 2]. SiCOI structure has been investigated for the applications of piezo-resistive sensors and micro electromechanical systems (MEMS) operating at physically and chemically harsh environments [3]. SiC growth on SOI substrates, however, is very difficult owing to thermal instability of the thin top-Si layer. During the thermal annealing of SOI substrates at the substrate temperature lower than 1000°C depending on the top Si layer thickness, Si atoms agglomerate and the Si islands and voids would be formed [4, 5]. Because outdiffusion of the Si atoms into SiC layer is induced in the case of the SiC growth on Si layer, void formation takes place at lower temperatures than that in the case of the thermal annealing. The SiC growth at much lower temperature than 1000°C, therefore, is required. In our previous study, 3C-SiC epitaxial films were grown at 750°C by hot-mesh CVD, a kind of hot-wire CVD which utilizes the catalytic decomposition of source gases by heated tungsten (W) wires with a mesh structure [6], using monomethylsilane (MMS) as a source gas. In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor.
碳化硅(SiC)是一种宽禁带半导体，具有优异的电子和化学性能。为了降低SiC器件的生产成本，需要在大直径的硅片上制造SiC器件。然而，对于在SiC层中制造电子器件，由于SiC和衬底之间的漏电流，需要在SiC和Si衬底之间进行电子隔离。因此，将SOI (Si on insulator)技术应用于SiC on insulator (SiCOI)结构已成为研究热点[1,2]。SiCOI结构已被研究用于在物理和化学恶劣环境下工作的压阻传感器和微机电系统(MEMS)的应用[3]。然而，由于薄的顶部硅层的热不稳定性，SiC在SOI衬底上生长非常困难。在低于1000℃的衬底温度下，根据顶部Si层厚度的不同，SOI衬底的热退火过程中，Si原子聚集，形成Si岛和Si空洞[4,5]。由于SiC在Si层上生长导致Si原子向SiC层外扩散，因此在较低的温度下形成空洞。因此，需要在远低于1000°C的温度下生长SiC。在我们之前的研究中，我们使用热网CVD在750℃下生长了3C-SiC外延膜。热网CVD是一种利用加热网状结构的钨丝催化分解源气体的热丝CVD[6]，以单甲基硅烷(MMS)为源气体。本文采用热网CVD法研究了SOI衬底上3C-SiC薄膜的外延生长。并对其压阻性能进行了测试，以供压力传感器使用。
{"title":"Heteroepitaxial growth of SiC at low temperatures for the application of a pressure sensor using hot-mesh CVD","authors":"K. Yasui, H. Miura, Jyunpei Eto, Y. Narita, A. M. Hashim","doi":"10.1109/ESCINANO.2010.5701025","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701025","url":null,"abstract":"Silicon carbide (SiC) is a wide bandgap semiconductor and it exhibits excellent electronic and chemical properties. Fabrication of SiC devices on Si wafers of large diameter is desired to reduce their production cost. For the fabrication of electronic devices in the SiC layer, however, an electronic isolation between SiC and Si substrate is required because of the leakage current between the SiC and the substrate. Therefore the application of the SOI (Si on insulator) technique to the SiC on insulator (SiCOI) structure has been eagerly investigated [1, 2]. SiCOI structure has been investigated for the applications of piezo-resistive sensors and micro electromechanical systems (MEMS) operating at physically and chemically harsh environments [3]. SiC growth on SOI substrates, however, is very difficult owing to thermal instability of the thin top-Si layer. During the thermal annealing of SOI substrates at the substrate temperature lower than 1000°C depending on the top Si layer thickness, Si atoms agglomerate and the Si islands and voids would be formed [4, 5]. Because outdiffusion of the Si atoms into SiC layer is induced in the case of the SiC growth on Si layer, void formation takes place at lower temperatures than that in the case of the thermal annealing. The SiC growth at much lower temperature than 1000°C, therefore, is required. In our previous study, 3C-SiC epitaxial films were grown at 750°C by hot-mesh CVD, a kind of hot-wire CVD which utilizes the catalytic decomposition of source gases by heated tungsten (W) wires with a mesh structure [6], using monomethylsilane (MMS) as a source gas. In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84606721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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