Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843937
G. Bersuker, V. Blaschke, S. Choi, D. Wick
Electrical characterization of Cu/low-k structures was performed to address intrinsic material properties. It was shown that ionic conduction due to contamination inherent to the dielectric was the leading cause of an intrinsic intra metal line leakage current at low temperatures, while at elevated temperatures a contribution from electron current was detected. Dielectric and barrier layer parameters that control the conduction process were evaluated.
{"title":"Conduction processes in Cu/low-K interconnection","authors":"G. Bersuker, V. Blaschke, S. Choi, D. Wick","doi":"10.1109/RELPHY.2000.843937","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843937","url":null,"abstract":"Electrical characterization of Cu/low-k structures was performed to address intrinsic material properties. It was shown that ionic conduction due to contamination inherent to the dielectric was the leading cause of an intrinsic intra metal line leakage current at low temperatures, while at elevated temperatures a contribution from electron current was detected. Dielectric and barrier layer parameters that control the conduction process were evaluated.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"1 1","pages":"344-347"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86438837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843938
R. Tsu, J. McPherson, W. Mckee
Leakage and breakdown characteristics of low-k dielectrics are becoming increasingly important reliability issues for interconnects as they are scaled to 0.18 um and below. Several of the low-k dielectrics, integrated into a dual-damascene Cu process flow, are quite leaky and have difficulty in meeting a leakage spec of 1E-8 A/cm/sup 2/ at 25/spl deg/C. Time-dependent dielectric breakdown (TDDB) for some of the low-k candidate films is also an issue because of generally low breakdown strengths <2 MV/cm. Furthermore, Cu out-diffusion through poor barrier confinement can result in increased electronic leakage and premature TDDB. Also, moisture absorption by these low-k materials serves to: increase the dielectric constant, increase the leakage and reduce the breakdown strength. These findings can have important reliability implications for Cu/low-k and care must be exercised in dual-damascene integration schemes.
低k介电介质的泄漏和击穿特性正成为互连中越来越重要的可靠性问题，因为它们被缩小到0.18 um及以下。一些低k介电体，集成到双damascene Cu工艺流程中，相当泄漏，并且在25/spl℃时难以满足1E-8 a /cm/sup 2/的泄漏规格。对于一些低k候选薄膜来说，时间相关介电击穿(TDDB)也是一个问题，因为它们的击穿强度通常较低，<2 MV/cm。此外，Cu通过不良的势垒限制向外扩散会导致电子泄漏增加和过早的TDDB。此外，这些低k材料的吸湿作用:增加介电常数，增加泄漏，降低击穿强度。这些发现可能对Cu/低钾的可靠性有重要的影响，在双大马士革集成方案中必须注意。
{"title":"Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process","authors":"R. Tsu, J. McPherson, W. Mckee","doi":"10.1109/RELPHY.2000.843938","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843938","url":null,"abstract":"Leakage and breakdown characteristics of low-k dielectrics are becoming increasingly important reliability issues for interconnects as they are scaled to 0.18 um and below. Several of the low-k dielectrics, integrated into a dual-damascene Cu process flow, are quite leaky and have difficulty in meeting a leakage spec of 1E-8 A/cm/sup 2/ at 25/spl deg/C. Time-dependent dielectric breakdown (TDDB) for some of the low-k candidate films is also an issue because of generally low breakdown strengths <2 MV/cm. Furthermore, Cu out-diffusion through poor barrier confinement can result in increased electronic leakage and premature TDDB. Also, moisture absorption by these low-k materials serves to: increase the dielectric constant, increase the leakage and reduce the breakdown strength. These findings can have important reliability implications for Cu/low-k and care must be exercised in dual-damascene integration schemes.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"1 1","pages":"348-353"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78627953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843925
U. Sennhauser, A. Frank, P. Mauron, P. Nellen
Mechanical and optical reliability of fibers and Bragg gratings at elevated temperature of up to 250/spl deg/C are modeled and parameters are determined in an extended test program. Stress corrosion and grating decay are investigated for two commercially available Bragg grating types.
{"title":"Reliability of optical fiber Bragg grating sensors at elevated temperature","authors":"U. Sennhauser, A. Frank, P. Mauron, P. Nellen","doi":"10.1109/RELPHY.2000.843925","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843925","url":null,"abstract":"Mechanical and optical reliability of fibers and Bragg gratings at elevated temperature of up to 250/spl deg/C are modeled and parameters are determined in an extended test program. Stress corrosion and grating decay are investigated for two commercially available Bragg grating types.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"43 1","pages":"264-269"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77502182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843918
T. Moore, J. Jarvis
This paper examines one of the common modes of structural failure in multichip BGAs, determines its locations within the package structure, relates it to the stresses generated in the reliability tests under which it occurs, and by Finite Element simulations, determines an explanation for the failure, and finally proposes a method to avoid this failure mechanism. Several designs of multichip BGA substrates were manufactured and production silicon assembled into them. These were all 14/spl times/22 mm 119 ball PBGA. These were subjected to a set of package reliability tests, until some units failed electrical test. The failed units were analysed and the physical location and shape of the failure was determined in many cases. From this information, the mechanical mode of failure for each unit was determined. In addition there was sufficient information in some of the analyses to provide definite suggestions as to the mechanism of failure. Meanwhile, Finite Element Analysis was performed using simplified representations of the multichip BGAs, in order to find the locations of highest stress, and the expected modes of failure. This data was matched to the failure modes found in the physical analysis. Some novel failure analysis techniques were used to expose the damage in the failed units. A particular failure mode occurred frequently in temperature cycle, and the sites of failure were located by failure analysis. The failure was due to open circuit in the copper tracks in the top layer of the substrate caused by cracking in the solder resist directly underneath the edge of the die attach fillet. Finite element analysis was carried out and the location of the actual failures was found to be a local zone of high tensile stress in the solder resist.
{"title":"Failure analysis and stress simulation in small multichip BGAs","authors":"T. Moore, J. Jarvis","doi":"10.1109/RELPHY.2000.843918","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843918","url":null,"abstract":"This paper examines one of the common modes of structural failure in multichip BGAs, determines its locations within the package structure, relates it to the stresses generated in the reliability tests under which it occurs, and by Finite Element simulations, determines an explanation for the failure, and finally proposes a method to avoid this failure mechanism. Several designs of multichip BGA substrates were manufactured and production silicon assembled into them. These were all 14/spl times/22 mm 119 ball PBGA. These were subjected to a set of package reliability tests, until some units failed electrical test. The failed units were analysed and the physical location and shape of the failure was determined in many cases. From this information, the mechanical mode of failure for each unit was determined. In addition there was sufficient information in some of the analyses to provide definite suggestions as to the mechanism of failure. Meanwhile, Finite Element Analysis was performed using simplified representations of the multichip BGAs, in order to find the locations of highest stress, and the expected modes of failure. This data was matched to the failure modes found in the physical analysis. Some novel failure analysis techniques were used to expose the damage in the failed units. A particular failure mode occurred frequently in temperature cycle, and the sites of failure were located by failure analysis. The failure was due to open circuit in the copper tracks in the top layer of the substrate caused by cracking in the solder resist directly underneath the edge of the die attach fillet. Finite element analysis was carried out and the location of the actual failures was found to be a local zone of high tensile stress in the solder resist.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"44 1","pages":"217-224"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77856836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843919
D. Manic, J. Petr, R. Popovic
Thermal-mechanical stresses occur in plastic IC packages. These stresses affect Hall plate magnetic sensitivity via the piezo-Hall effect. In this paper the short and long-term stability problems of Hall plates encapsulated in SOP and TSSOP packages are considered. A sensitivity shift is observed when reflow soldering, temperature cycling, or humidity testing are performed. Moreover, this shift is not stable in time and a slow relaxation is observed. This parameter shift is seen as a serious reliability failure of the Hall plates. Sensitivity drift is related to packaging stress drift due to the viscoelastic flow of the molding compound. The normal in-plane stress drift is calculated from the high-accuracy magnetic measurements.
{"title":"Short and long-term stability problems of Hall plates in plastic packages","authors":"D. Manic, J. Petr, R. Popovic","doi":"10.1109/RELPHY.2000.843919","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843919","url":null,"abstract":"Thermal-mechanical stresses occur in plastic IC packages. These stresses affect Hall plate magnetic sensitivity via the piezo-Hall effect. In this paper the short and long-term stability problems of Hall plates encapsulated in SOP and TSSOP packages are considered. A sensitivity shift is observed when reflow soldering, temperature cycling, or humidity testing are performed. Moreover, this shift is not stable in time and a slow relaxation is observed. This parameter shift is seen as a serious reliability failure of the Hall plates. Sensitivity drift is related to packaging stress drift due to the viscoelastic flow of the molding compound. The normal in-plane stress drift is calculated from the high-accuracy magnetic measurements.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"6 1","pages":"225-230"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83983221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843889
T. Pompl, H. Wurzer, M. Kerber, I. Eisele
It is shown in this work that the soft breakdown can follow a significantly different temperature and field acceleration behavior than the dielectric breakdown (hard breakdown). These properties have a strong influence on reliability prediction of ultra-thin oxides and can result in misinterpretation if soft breakdown and hard breakdown events are mixed up during gate oxide reliability testing. The activation energy and the field acceleration of the soft breakdown are compared to the disturbed-bond breakage process proposed in the thermochemical E-model. It is concluded that soft breakdown can be caused by H-Si and H-O bond breakage due to the electric field in the oxide. The activation energy for soft breakdown also indicates that formation of a soft breakdown path is influenced by hydrogen diffusion in the oxide.
{"title":"Investigation of ultra-thin gate oxide reliability behavior by separate characterization of soft breakdown and hard breakdown","authors":"T. Pompl, H. Wurzer, M. Kerber, I. Eisele","doi":"10.1109/RELPHY.2000.843889","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843889","url":null,"abstract":"It is shown in this work that the soft breakdown can follow a significantly different temperature and field acceleration behavior than the dielectric breakdown (hard breakdown). These properties have a strong influence on reliability prediction of ultra-thin oxides and can result in misinterpretation if soft breakdown and hard breakdown events are mixed up during gate oxide reliability testing. The activation energy and the field acceleration of the soft breakdown are compared to the disturbed-bond breakage process proposed in the thermochemical E-model. It is concluded that soft breakdown can be caused by H-Si and H-O bond breakage due to the electric field in the oxide. The activation energy for soft breakdown also indicates that formation of a soft breakdown path is influenced by hydrogen diffusion in the oxide.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"21 1","pages":"40-47"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84469184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-03-01DOI: 10.1109/RELPHY.2000.843905
S. Mani, J. Fleming, J. Walraven, J. Sniegowski, M.P. se Beer, L. W. Irwin, D. M. Tanner, D. Laván, M. Dugger, J. Jakubczak, W. M. Miller
Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF/sub 6/. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by microengine test structures.
{"title":"Effect of W coating on microengine performance","authors":"S. Mani, J. Fleming, J. Walraven, J. Sniegowski, M.P. se Beer, L. W. Irwin, D. M. Tanner, D. Laván, M. Dugger, J. Jakubczak, W. M. Miller","doi":"10.1109/RELPHY.2000.843905","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843905","url":null,"abstract":"Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF/sub 6/. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by microengine test structures.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"31 1","pages":"146-151"},"PeriodicalIF":0.0,"publicationDate":"2000-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86330944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-02-09DOI: 10.1109/RELPHY.2000.843903
D. M. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, F. Brown, N. F. Smith, Nathan Masters Sandia
In order to determine the susceptibility of our MEMS (MicroElectroMechanical Systems) devices to shock, tests were performed using haversine shock pulses with widths of 1 to 0.2 ms in the range from 500 g to 40000 g. We chose a surface-micromachined microengine because it has all the components needed for evaluation: springs that flex, gears that are anchored, and clamps and spring stops to maintain alignment. The microengines, which were unpowered for the tests, performed quite well at most shock levels with a majority functioning after the impact. Debris from the die edges moved at levels greater than 4000 g causing shorts in the actuators and posing reliability concerns. The coupling agent used to prevent stiction in the MEMS release weakened the die-attach bond, which produced failures at 10000 g and above. At 20000 g we began to observe structural damage in some of the thin flexures and 2.5-micron diameter pin joints. We observed electrical failures caused by the movement of debris. Additionally, we observed a new failure mode where stationary comb fingers contact the ground plane resulting in electrical shorts. These new failures were observed in our control group indicating that they were not shock related.
{"title":"MEMS reliability in shock environments","authors":"D. M. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, F. Brown, N. F. Smith, Nathan Masters Sandia","doi":"10.1109/RELPHY.2000.843903","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843903","url":null,"abstract":"In order to determine the susceptibility of our MEMS (MicroElectroMechanical Systems) devices to shock, tests were performed using haversine shock pulses with widths of 1 to 0.2 ms in the range from 500 g to 40000 g. We chose a surface-micromachined microengine because it has all the components needed for evaluation: springs that flex, gears that are anchored, and clamps and spring stops to maintain alignment. The microengines, which were unpowered for the tests, performed quite well at most shock levels with a majority functioning after the impact. Debris from the die edges moved at levels greater than 4000 g causing shorts in the actuators and posing reliability concerns. The coupling agent used to prevent stiction in the MEMS release weakened the die-attach bond, which produced failures at 10000 g and above. At 20000 g we began to observe structural damage in some of the thin flexures and 2.5-micron diameter pin joints. We observed electrical failures caused by the movement of debris. Additionally, we observed a new failure mode where stationary comb fingers contact the ground plane resulting in electrical shorts. These new failures were observed in our control group indicating that they were not shock related.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"82 1","pages":"129-138"},"PeriodicalIF":0.0,"publicationDate":"2000-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77393239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-02-03DOI: 10.1109/RELPHY.2000.843904
D. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, D. Gregory, J. Stake, N. F. Smith
MicroElectroMechanical Systems (MEMS) were subjected to a vibration environment that had a peak acceleration of 120 g and spanned frequencies from 20 to 2000 Hz. The device chosen for this test was a surface-micromachined microengine because it possesses many elements (springs, gears, rubbing surfaces) that may be susceptible to vibration. The microengines were unpowered during the test. We observed 2 vibration-related failures and 3 electrical failures out of 22 microengines tested. Surprisingly, the electrical failures also arose in four microengines in our control group indicating that they were not vibration related. Failure analysis revealed that the electrical failures were due to shorting of stationary comb fingers to the ground plane.
{"title":"MEMS reliability in a vibration environment","authors":"D. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, D. Gregory, J. Stake, N. F. Smith","doi":"10.1109/RELPHY.2000.843904","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843904","url":null,"abstract":"MicroElectroMechanical Systems (MEMS) were subjected to a vibration environment that had a peak acceleration of 120 g and spanned frequencies from 20 to 2000 Hz. The device chosen for this test was a surface-micromachined microengine because it possesses many elements (springs, gears, rubbing surfaces) that may be susceptible to vibration. The microengines were unpowered during the test. We observed 2 vibration-related failures and 3 electrical failures out of 22 microengines tested. Surprisingly, the electrical failures also arose in four microengines in our control group indicating that they were not vibration related. Failure analysis revealed that the electrical failures were due to shorting of stationary comb fingers to the ground plane.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"16 1","pages":"139-145"},"PeriodicalIF":0.0,"publicationDate":"2000-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78378506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-01-01DOI: 10.1109/RELPHY.2000.843893
W. Qi, R. Nieh, K. Onishi, B. Lee, L. Kang, Y. Jeon, S. Gopalan, Jack C. Lee
Temperature effect on the reliability of ZrO/sub 2/ gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from Arrhenius plot indicates that the breakdown of ZrO/sub 2/ is less sensitive to temperature than a thermal oxide of similar electrical thickness. ZrO/sub 2/ films exhibit excellent TDDB characteristics with low charge trapping and no stress induced leakage current. The field and temperature acceleration for TDDB for the 15.8 /spl Aring/ capacitance equivalent oxide thickness (CET) ZrO/sub 2/ shows that the activation energy for TDDB falls into the range reported for oxide from 39 /spl Aring/ to 150 /spl Aring/. It was found that the extrapolated 10-year lifetime operating voltage can be as high as -1.9 V, even at 150/spl deg/C based on the "log(t/sub BD/) vs E" extrapolation model for a film with a CET of 15.8 /spl Aring/.
{"title":"Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon","authors":"W. Qi, R. Nieh, K. Onishi, B. Lee, L. Kang, Y. Jeon, S. Gopalan, Jack C. Lee","doi":"10.1109/RELPHY.2000.843893","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843893","url":null,"abstract":"Temperature effect on the reliability of ZrO/sub 2/ gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from Arrhenius plot indicates that the breakdown of ZrO/sub 2/ is less sensitive to temperature than a thermal oxide of similar electrical thickness. ZrO/sub 2/ films exhibit excellent TDDB characteristics with low charge trapping and no stress induced leakage current. The field and temperature acceleration for TDDB for the 15.8 /spl Aring/ capacitance equivalent oxide thickness (CET) ZrO/sub 2/ shows that the activation energy for TDDB falls into the range reported for oxide from 39 /spl Aring/ to 150 /spl Aring/. It was found that the extrapolated 10-year lifetime operating voltage can be as high as -1.9 V, even at 150/spl deg/C based on the \"log(t/sub BD/) vs E\" extrapolation model for a film with a CET of 15.8 /spl Aring/.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"30 1","pages":"72-76"},"PeriodicalIF":0.0,"publicationDate":"2000-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75808466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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