Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843950
J. Chin, J. Phang, D. Chan, C. E. Soh, G. Gilfeather
The Single Contact Optical Beam Induced Currents (SCOBIC) is a new failure analysis technique. By connecting the substrate or power pins of an integrated circuit to the current amplifier, many junctions can be imaged. In contrast, in the optical beam induced current (OBIC) technique, only the junction directly connected to the current amplifier is imaged. The implementation of the SCOBIC approach is discussed and experimental results which validates the SCOBIC approach is presented. Application of the SCOBIC technique for CMOS devices is also discussed.
{"title":"Single contact optical beam induced currents (SCOBIC)-a new failure analysis technique","authors":"J. Chin, J. Phang, D. Chan, C. E. Soh, G. Gilfeather","doi":"10.1109/RELPHY.2000.843950","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843950","url":null,"abstract":"The Single Contact Optical Beam Induced Currents (SCOBIC) is a new failure analysis technique. By connecting the substrate or power pins of an integrated circuit to the current amplifier, many junctions can be imaged. In contrast, in the optical beam induced current (OBIC) technique, only the junction directly connected to the current amplifier is imaged. The implementation of the SCOBIC approach is discussed and experimental results which validates the SCOBIC approach is presented. Application of the SCOBIC technique for CMOS devices is also discussed.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"24 1","pages":"420-424"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74657665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843891
D. Ielmini, A.S. Spinellii, A. Lacaita, G. Ghidini
This work presents experimental and computational investigations on the physical mechanisms of SILC. Carrier separation measurements are carried out on MOS samples with oxide thickness 6-8 nm, highlighting the electron and hole contributions to the SILC. We have investigated the relation between these components by means of time-relaxation. It is found that a linear relationship holds between electron SILC and hole SILC, measured at different times after the initial high-field stress. The same linearity has been observed for increasing fluences of injected electrons, at fixed stressing field. A correlation between electron and hole ILC is found also from a comparison between carrier separation data obtained in n/sup +/- and p/sup +/- polysilicon devices. These experimental data entails that hole SILC is due to a recombination current. As a result of these experimental findings, a new model for the SILC is developed. This model is based on trap-assisted tunneling, but also accounts for hole tunneling and includes Shockley-Hall-Read recombination process in the bulk oxide as a new leakage mechanism. Simulations in the oxide thickness range 5.9-8.2 nm show excellent agreement with I-V measurements and carrier-separation data. The resulting defect concentration scales with the oxide thickness, in agreement with published results. The energy distribution of defects responsible for the steady-state leakage is located 0.7-1.3 eV below the Si conduction-band minimum. Capture cross sections of 10/sup -13/ and 10/sup -16/ cm/sup 2/ have been assumed for electrons and holes respectively, compatible with a donor charge state of the SILC-related defect centers. Simulations are finally shown for oxide thickness t/sub 0x/=2.8 nm. The mechanism of recombination in the bulk oxide accounts very well for the observation of low-voltage SILC in ultrathin oxide, showing the effectiveness of the proposed SILC model.
{"title":"Evidence for recombination at oxide defects and new SILC model","authors":"D. Ielmini, A.S. Spinellii, A. Lacaita, G. Ghidini","doi":"10.1109/RELPHY.2000.843891","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843891","url":null,"abstract":"This work presents experimental and computational investigations on the physical mechanisms of SILC. Carrier separation measurements are carried out on MOS samples with oxide thickness 6-8 nm, highlighting the electron and hole contributions to the SILC. We have investigated the relation between these components by means of time-relaxation. It is found that a linear relationship holds between electron SILC and hole SILC, measured at different times after the initial high-field stress. The same linearity has been observed for increasing fluences of injected electrons, at fixed stressing field. A correlation between electron and hole ILC is found also from a comparison between carrier separation data obtained in n/sup +/- and p/sup +/- polysilicon devices. These experimental data entails that hole SILC is due to a recombination current. As a result of these experimental findings, a new model for the SILC is developed. This model is based on trap-assisted tunneling, but also accounts for hole tunneling and includes Shockley-Hall-Read recombination process in the bulk oxide as a new leakage mechanism. Simulations in the oxide thickness range 5.9-8.2 nm show excellent agreement with I-V measurements and carrier-separation data. The resulting defect concentration scales with the oxide thickness, in agreement with published results. The energy distribution of defects responsible for the steady-state leakage is located 0.7-1.3 eV below the Si conduction-band minimum. Capture cross sections of 10/sup -13/ and 10/sup -16/ cm/sup 2/ have been assumed for electrons and holes respectively, compatible with a donor charge state of the SILC-related defect centers. Simulations are finally shown for oxide thickness t/sub 0x/=2.8 nm. The mechanism of recombination in the bulk oxide accounts very well for the observation of low-voltage SILC in ultrathin oxide, showing the effectiveness of the proposed SILC model.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"2005 1","pages":"55-64"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83033557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843899
S. K. Manhas, M. M. De Souza, A. S. Gates, S. Chetlur, E. M. Sankara Narayanan
A detailed investigation of the hot carrier degradation of submicron LDD n-MOSFETs reveals a new early stage degradation regime, which deviates from power law behaviour. The quantitative analysis obtained through extraction of drain series resistance and mobility shows a two-stage drain series resistance degradation. For the first time, the degradation in the spacer region is clearly distinguished from that in the channel region of the device. For the technologies under investigation, the damage is seen to spread to the channel within 10 seconds, far earlier than reported in the literature.
{"title":"Early stage hot carrier degradation of state-of-the-art LDD N-MOSFETs","authors":"S. K. Manhas, M. M. De Souza, A. S. Gates, S. Chetlur, E. M. Sankara Narayanan","doi":"10.1109/RELPHY.2000.843899","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843899","url":null,"abstract":"A detailed investigation of the hot carrier degradation of submicron LDD n-MOSFETs reveals a new early stage degradation regime, which deviates from power law behaviour. The quantitative analysis obtained through extraction of drain series resistance and mobility shows a two-stage drain series resistance degradation. For the first time, the degradation in the spacer region is clearly distinguished from that in the channel region of the device. For the technologies under investigation, the damage is seen to spread to the channel within 10 seconds, far earlier than reported in the literature.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"21 1","pages":"108-111"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83223146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843890
S. Bruyère, E. Vincent, G. Ghibaudo
This paper discusses different statistical approaches for the quasi-breakdown phenomenon. In particular, a novel methodology based on the idea that breakdown and quasi-breakdown are competing mechanisms and that they have to be separately analyzed, is developed and well validated for oxide thickness ranging from 3.5 down to 2.5 nm. This methodology is demonstrated to well explain all the quasi-breakdown rate variations with temperature, voltage, area and oxide thickness. Moreover, this new approach enables to rigorously determine the quasi-breakdown acceleration factor with temperature and electric field, which have been found to be different from the breakdown ones. As a result, and confirmed by the difference observed between the obtained time to breakdown and time to quasi-breakdown spreads, the defects at the origin of both phenomena have to be different. Finally, a reliability assessment methodology is presented enabling a proper analysis of both phenomena for reliability evaluation and lifetime prediction.
{"title":"Quasi-breakdown in ultra-thin SiO/sub 2/ films: occurrence characterization and reliability assessment methodology","authors":"S. Bruyère, E. Vincent, G. Ghibaudo","doi":"10.1109/RELPHY.2000.843890","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843890","url":null,"abstract":"This paper discusses different statistical approaches for the quasi-breakdown phenomenon. In particular, a novel methodology based on the idea that breakdown and quasi-breakdown are competing mechanisms and that they have to be separately analyzed, is developed and well validated for oxide thickness ranging from 3.5 down to 2.5 nm. This methodology is demonstrated to well explain all the quasi-breakdown rate variations with temperature, voltage, area and oxide thickness. Moreover, this new approach enables to rigorously determine the quasi-breakdown acceleration factor with temperature and electric field, which have been found to be different from the breakdown ones. As a result, and confirmed by the difference observed between the obtained time to breakdown and time to quasi-breakdown spreads, the defects at the origin of both phenomena have to be different. Finally, a reliability assessment methodology is presented enabling a proper analysis of both phenomena for reliability evaluation and lifetime prediction.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"27 1","pages":"48-54"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84069491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843902
C. Rembe, H. Aschemann, S. aus der Wiesche, E. Hofer, H. Debéda, J. Mohr, U. Wallrabe
The reliability investigations presented in this paper have been performed on a micro opto electro mechanical switch developed for switching and attenuation of light propagation in optical fibers. It is demonstrated that high-speed cine photomicrography together with model based evaluation of the image sequences is a powerful diagnostic tool for reliability testing of dynamic processes in micro electro mechanical systems (MEMS).
{"title":"Nontactile reliability testing of a micro optical attenuator","authors":"C. Rembe, H. Aschemann, S. aus der Wiesche, E. Hofer, H. Debéda, J. Mohr, U. Wallrabe","doi":"10.1109/RELPHY.2000.843902","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843902","url":null,"abstract":"The reliability investigations presented in this paper have been performed on a micro opto electro mechanical switch developed for switching and attenuation of light propagation in optical fibers. It is demonstrated that high-speed cine photomicrography together with model based evaluation of the image sequences is a powerful diagnostic tool for reliability testing of dynamic processes in micro electro mechanical systems (MEMS).","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"199 1","pages":"123-128"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77795262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843927
C. Leroux, P. Andreucci, G. Reimbold
In new technologies, concern for oxide breakdown during ESD (ElectroStatic Discharge) is becoming more and more important. It is usually evaluated using the classical 1/E law for the time to breakdown. In this study, we report different experiments demonstrating that this model for the time to breakdown need to be improved in the case of ESD stresses. A model for the conduction at these high current densities is proposed. The times to breakdown are analyzed on a large range of current densities. We show that we must take into account the effects of current crowding, electrical breakdown, temperature increase during the pulse and thermal breakdown to understand the failure mechanisms. A model is proposed to evaluate the heating during the ESD pulses and to predict the oxide strength.
{"title":"Analysis of oxide breakdown mechanism occurring during ESD pulses","authors":"C. Leroux, P. Andreucci, G. Reimbold","doi":"10.1109/RELPHY.2000.843927","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843927","url":null,"abstract":"In new technologies, concern for oxide breakdown during ESD (ElectroStatic Discharge) is becoming more and more important. It is usually evaluated using the classical 1/E law for the time to breakdown. In this study, we report different experiments demonstrating that this model for the time to breakdown need to be improved in the case of ESD stresses. A model for the conduction at these high current densities is proposed. The times to breakdown are analyzed on a large range of current densities. We show that we must take into account the effects of current crowding, electrical breakdown, temperature increase during the pulse and thermal breakdown to understand the failure mechanisms. A model is proposed to evaluate the heating during the ESD pulses and to predict the oxide strength.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"4 1","pages":"276-282"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74181761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843901
L. Que, Jaesung Park, Mo-Huang Li, Y. Gianchandani
This paper reports on the first lifetime studies of the recently developed bent-beam electro-thermal microactuators. Measurements of p/sup ++/ Si bulk micromachined devices under varying operating conditions reveal that device lifetimes and degradation patterns are linked to actuation conditions as well as certain dimensional parameters. Device lifetimes in excess of 30 million cycles are observed. A model similar to that used for fatigue of steel is shown to be very suitable for predicting performance degradation. The model parameters are explored as a function of operating conditions.
{"title":"Reliability studies of bent-beam electro-thermal actuators","authors":"L. Que, Jaesung Park, Mo-Huang Li, Y. Gianchandani","doi":"10.1109/RELPHY.2000.843901","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843901","url":null,"abstract":"This paper reports on the first lifetime studies of the recently developed bent-beam electro-thermal microactuators. Measurements of p/sup ++/ Si bulk micromachined devices under varying operating conditions reveal that device lifetimes and degradation patterns are linked to actuation conditions as well as certain dimensional parameters. Device lifetimes in excess of 30 million cycles are observed. A model similar to that used for fatigue of steel is shown to be very suitable for predicting performance degradation. The model parameters are explored as a function of operating conditions.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"98 1","pages":"118-122"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79426149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843948
B. Lisenker, Y. Mitnick
In this paper it is shown that a small linear variation of poly critical dimensions, effective channel length, and transistor threshold voltage caused by non-controlled process variations will result in an exponential variation in the of state conductivity of a transistor. For the first time, it is shown, that the application of the percolation theory makes it possible to integrate the contribution of short channel MOSFET's to the standby current of deep-sub-micron CMOS microprocessors taking into consideration the above process variations. It is proved that a Fault model, which consists of an equivalent effective MOSFET with inherent defects, can represent a CMOS VLSI circuit in standby mode. The model permits the use of standby current versus voltage test results for screening, built-in reliability and the process monitoring. The viability of this model is examined on 32-bit 0.25 /spl mu/m CMOS microprocessors. Results obtained on the product line confirm the model and show a strong correlation between rejected devices and infant mortality failures.
{"title":"Reliability assessment through defect based testing","authors":"B. Lisenker, Y. Mitnick","doi":"10.1109/RELPHY.2000.843948","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843948","url":null,"abstract":"In this paper it is shown that a small linear variation of poly critical dimensions, effective channel length, and transistor threshold voltage caused by non-controlled process variations will result in an exponential variation in the of state conductivity of a transistor. For the first time, it is shown, that the application of the percolation theory makes it possible to integrate the contribution of short channel MOSFET's to the standby current of deep-sub-micron CMOS microprocessors taking into consideration the above process variations. It is proved that a Fault model, which consists of an equivalent effective MOSFET with inherent defects, can represent a CMOS VLSI circuit in standby mode. The model permits the use of standby current versus voltage test results for screening, built-in reliability and the process monitoring. The viability of this model is examined on 32-bit 0.25 /spl mu/m CMOS microprocessors. Results obtained on the product line confirm the model and show a strong correlation between rejected devices and infant mortality failures.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"59 1","pages":"407-412"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73101094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843917
M. Ciappa, W. Fichtner
Bond wire lift-off caused by low-cycle fatigue is one among the dominant failure mechanisms of modern high power Insulated Gate Bipolar Transistors multichip modules used in traction applications. A model is proposed which is calibrated basing on data from accelerated tests and which predicts quantitatively the lifetime of devices submitted to cyclic loads as they are encountered in current converters of railway systems. It assumes linear accumulation of the thermal-cycle fatigue damage and takes into account the redundancy of the bond wires within a complex multichip module.
{"title":"Lifetime prediction of IGBT modules for traction applications","authors":"M. Ciappa, W. Fichtner","doi":"10.1109/RELPHY.2000.843917","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843917","url":null,"abstract":"Bond wire lift-off caused by low-cycle fatigue is one among the dominant failure mechanisms of modern high power Insulated Gate Bipolar Transistors multichip modules used in traction applications. A model is proposed which is calibrated basing on data from accelerated tests and which predicts quantitatively the lifetime of devices submitted to cyclic loads as they are encountered in current converters of railway systems. It assumes linear accumulation of the thermal-cycle fatigue damage and takes into account the redundancy of the bond wires within a complex multichip module.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"13 1","pages":"210-216"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75316556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-04-10DOI: 10.1109/RELPHY.2000.843907
Y. Mitnick, B. Lisenker, U. Sasson, R. Miller
Parametric failure is becoming the main reason of yield/reliability loss in new products. Microprocessors on 0.35 /spl mu/m and 0.25 /spl mu/m processes show a high level of parametric (soft) failure. We propose to introduce a parametric process-to-design baseline by using basic physical relations of integrated product parameters and transistor level parameters as a function of systematic process instabilities on the die/wafer level. The deviations from the baseline are caused by process-related defects that impact yield and reliability. We have introduced a new multi-parameter method in order to calculate this deviation and separate between parametric systematic defects and random defects. The analysis of >700 K 0.25 /spl mu/m microprocessor units showed that >16% of the units that have high deviation failed in burn-in (BI). The analysis of excursion material showed that the yield in subgroups of the units is a strong function of the deviation from the baseline. The new methodology enables the impact of process variation sources on product yield reliability and performance to be assessed.
参数失效已成为新产品成品率/可靠性损失的主要原因。在0.35 /spl mu/m和0.25 /spl mu/m进程上的微处理器显示出高水平的参数(软)故障。我们建议将集成产品参数和晶体管级参数的基本物理关系作为芯片/晶圆级系统工艺不稳定性的函数，引入参数化工艺到设计基线。与基线的偏差是由影响产量和可靠性的过程相关缺陷引起的。我们引入了一种新的多参数方法来计算这种偏差，并将参数系统缺陷与随机缺陷区分开来。对>700 K 0.25 /spl mu/m微处理器单元的分析表明，>16%的高偏差单元在老化(BI)中失败。对偏移材料的分析表明，单元亚组的产率与基线偏差有很强的关系。新方法使过程变异源对产品良率可靠性和性能的影响得以评估。
{"title":"Multi parameter method for yield analysis and reliability assessment","authors":"Y. Mitnick, B. Lisenker, U. Sasson, R. Miller","doi":"10.1109/RELPHY.2000.843907","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843907","url":null,"abstract":"Parametric failure is becoming the main reason of yield/reliability loss in new products. Microprocessors on 0.35 /spl mu/m and 0.25 /spl mu/m processes show a high level of parametric (soft) failure. We propose to introduce a parametric process-to-design baseline by using basic physical relations of integrated product parameters and transistor level parameters as a function of systematic process instabilities on the die/wafer level. The deviations from the baseline are caused by process-related defects that impact yield and reliability. We have introduced a new multi-parameter method in order to calculate this deviation and separate between parametric systematic defects and random defects. The analysis of >700 K 0.25 /spl mu/m microprocessor units showed that >16% of the units that have high deviation failed in burn-in (BI). The analysis of excursion material showed that the yield in subgroups of the units is a strong function of the deviation from the baseline. The new methodology enables the impact of process variation sources on product yield reliability and performance to be assessed.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":"35 1","pages":"158-163"},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75334644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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