Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614441
K. Wijekoon, T. Weidman, S. Paak, K. Macwilliams
We have very successfully developed a novel, IPA free chemical etching process for texturing single crystalline silicon substrates by employing polymer additives with aqueous KOH. In this paper we describe the successful implementation of this IPA free novel texturization process in our baseline single crystalline solar cell flow. The results have been validated with a number of repeated extended run production data. Solar cells fabricated with multiple wafer lots consistently exhibit cell efficiencies greater than 17.5%. It is found that surface texturing capability of this chemistry is slightly better than that of the established KOH/IPA process
{"title":"Production ready noval texture etching process for fabrication of single crystalline silicon solar cells","authors":"K. Wijekoon, T. Weidman, S. Paak, K. Macwilliams","doi":"10.1109/PVSC.2010.5614441","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614441","url":null,"abstract":"We have very successfully developed a novel, IPA free chemical etching process for texturing single crystalline silicon substrates by employing polymer additives with aqueous KOH. In this paper we describe the successful implementation of this IPA free novel texturization process in our baseline single crystalline solar cell flow. The results have been validated with a number of repeated extended run production data. Solar cells fabricated with multiple wafer lots consistently exhibit cell efficiencies greater than 17.5%. It is found that surface texturing capability of this chemistry is slightly better than that of the established KOH/IPA process","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"8 1","pages":"003635-003641"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78185121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614701
U. Farva, Jooyoung Lee, J. Park, R. Krishnan, T. Anderson, Chinho Park
High-quality CuInSe2 nanoparticles have been prepared by the solution phase synthesis procedure utilizing copper acetate or cuprous chloride as the Cu-precursor, indium chloride as the In-precursor and selenium powder as Se precursor, respectively. The synthesis process was optimized to grow 20 to 150 nm sized nanostructures of CuInSe2, and the Cu to In ratio as well as the kind of Cu-precursor used was found to be most important in determining the structure and property of the nanostructures. The synthesized nanostructures were characterized by TEM (transmission electron microscopy), XRD (X-ray diffraction), PL (photoluminescence) and micro-Raman spectroscopy, and detailed microstructural analyses of synthesized samples were also carried out by selective area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM).
{"title":"Optimization study of copper precursors for high quality CuInSe2 nanoparticles by wet chemical route","authors":"U. Farva, Jooyoung Lee, J. Park, R. Krishnan, T. Anderson, Chinho Park","doi":"10.1109/PVSC.2010.5614701","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614701","url":null,"abstract":"High-quality CuInSe2 nanoparticles have been prepared by the solution phase synthesis procedure utilizing copper acetate or cuprous chloride as the Cu-precursor, indium chloride as the In-precursor and selenium powder as Se precursor, respectively. The synthesis process was optimized to grow 20 to 150 nm sized nanostructures of CuInSe2, and the Cu to In ratio as well as the kind of Cu-precursor used was found to be most important in determining the structure and property of the nanostructures. The synthesized nanostructures were characterized by TEM (transmission electron microscopy), XRD (X-ray diffraction), PL (photoluminescence) and micro-Raman spectroscopy, and detailed microstructural analyses of synthesized samples were also carried out by selective area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM).","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"55 1","pages":"003472-003473"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78532566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614753
S. Demtsu, S. Bansal, D. Albin
Stability of thin-film CdTe module is crucial to the advancement of the technology. Long-term stability studies are carried out under a variety of accelerated test conditions. Accelerated-life-tests (ALT) are performed in the laboratory to accelerate degradation and hence quantify performance change in reasonably short periods of time. ALT studies attempt to simulate the conditions a solar module experiences outdoors during its lifetime, and ALT results are correlated to outdoor test results to estimate module service lifetimes, nameplate parameters, and product warranty. To accelerate degradation, laboratory experiments are often performed at elevated temperature, voltage bias and under continuous illumination. In this study laboratory size cells (0.5 cm2), mini-modules (15 cm × 15 cm) and full-size encapsulated modules (60 cm × 120 cm) that consist of monolithically interconnected cells were subjected to different levels of illumination, elevated temperatures and electrical biases for extended periods of time. Changes in efficiency, fill-factor (FF), open-circuit voltage (Voc) and short-circuit current (Isc) as a function stress time and stress conditions are discussed.
薄膜碲化镉组件的稳定性对该技术的发展至关重要。在各种加速试验条件下进行了长期稳定性研究。加速寿命试验(ALT)在实验室中进行，以加速退化，从而在相当短的时间内量化性能变化。ALT研究试图模拟太阳能组件在其使用寿命期间在户外经历的条件，ALT结果与户外测试结果相关联，以估计组件的使用寿命、铭牌参数和产品保修。为了加速降解，实验室实验通常在高温、电压偏置和连续照明下进行。在这项研究中，实验室大小的电池(0.5 cm2)、迷你模块(15 cm × 15 cm)和全尺寸封装模块(60 cm × 120 cm)由整体互连的电池组成，在长时间内受到不同程度的照明、高温和电偏。讨论了效率、填充因子(FF)、开路电压(Voc)和短路电流(Isc)随应力时间和应力条件的变化。
{"title":"Intrinsic stability of thin-film CdS/CdTe modules","authors":"S. Demtsu, S. Bansal, D. Albin","doi":"10.1109/PVSC.2010.5614753","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614753","url":null,"abstract":"Stability of thin-film CdTe module is crucial to the advancement of the technology. Long-term stability studies are carried out under a variety of accelerated test conditions. Accelerated-life-tests (ALT) are performed in the laboratory to accelerate degradation and hence quantify performance change in reasonably short periods of time. ALT studies attempt to simulate the conditions a solar module experiences outdoors during its lifetime, and ALT results are correlated to outdoor test results to estimate module service lifetimes, nameplate parameters, and product warranty. To accelerate degradation, laboratory experiments are often performed at elevated temperature, voltage bias and under continuous illumination. In this study laboratory size cells (0.5 cm2), mini-modules (15 cm × 15 cm) and full-size encapsulated modules (60 cm × 120 cm) that consist of monolithically interconnected cells were subjected to different levels of illumination, elevated temperatures and electrical biases for extended periods of time. Changes in efficiency, fill-factor (FF), open-circuit voltage (Voc) and short-circuit current (Isc) as a function stress time and stress conditions are discussed.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"231 1","pages":"001161-001165"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75567021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614541
Ian Sear, Marine Gasulla, A. Alemu, A. Freundlich
In this work we report on the optimization of a simple-spin coating technique using solution based Au colloidal nanoparticles and polyvinylpyrrolidone (PVP) and evaluate the potential for improving the efficiency of thin-base (<1 micron) conventional p/n GaAs and InP/InAsP multi quantum well (MQW) p-i-n solar cells. Optical properties of the coatings are analyzed by reflectance spectroscopy and spectroscopic ellipsometry. It is experimentally demonstrated that the approach yields to a remarkable improvement of the performance of studied devices. Quantum efficiency and reflectance analysis show an increase of the near-band edge and below bandgap (MQW) conversion efficiencies as well as a decrease of overall reflection losses. The proposed process is shown to be reversible (possibility of non-intrusive solvent based coating removal) and capable of improving device current outputs and fill factors. Significant AM0 efficiency increases for the conventional GaAs p/n and InP p-MQW-n devices are recorded both for samples coated with AuNP-PVP and PVP. However analysis indicate that the main improvement in IV characteristics is to be associated with a PVP related antireflect-coating effect.
{"title":"Gold nanoparticle-PVP based coating for efficiency enhancement of solar cells","authors":"Ian Sear, Marine Gasulla, A. Alemu, A. Freundlich","doi":"10.1109/PVSC.2010.5614541","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614541","url":null,"abstract":"In this work we report on the optimization of a simple-spin coating technique using solution based Au colloidal nanoparticles and polyvinylpyrrolidone (PVP) and evaluate the potential for improving the efficiency of thin-base (<1 micron) conventional p/n GaAs and InP/InAsP multi quantum well (MQW) p-i-n solar cells. Optical properties of the coatings are analyzed by reflectance spectroscopy and spectroscopic ellipsometry. It is experimentally demonstrated that the approach yields to a remarkable improvement of the performance of studied devices. Quantum efficiency and reflectance analysis show an increase of the near-band edge and below bandgap (MQW) conversion efficiencies as well as a decrease of overall reflection losses. The proposed process is shown to be reversible (possibility of non-intrusive solvent based coating removal) and capable of improving device current outputs and fill factors. Significant AM0 efficiency increases for the conventional GaAs p/n and InP p-MQW-n devices are recorded both for samples coated with AuNP-PVP and PVP. However analysis indicate that the main improvement in IV characteristics is to be associated with a PVP related antireflect-coating effect.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"54 1","pages":"002916-002918"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77866812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616749
Yang-Chieh Fan, J. Tan, Sieu Pheng Phang, D. Macdonald
We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.
{"title":"Iron imaging in multicrystalline silicon wafers via photoluminescence","authors":"Yang-Chieh Fan, J. Tan, Sieu Pheng Phang, D. Macdonald","doi":"10.1109/PVSC.2010.5616749","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616749","url":null,"abstract":"We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different parts of an ingot, both before and after phosphorus gettering. The high spatial resolution mega-pixel images of the dissolved iron concentration generated in this way help to better understand the behavior of iron in this material, and it's response to cell processing steps.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"28 1","pages":"000439-000442"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77960276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614677
E. Bundgaard, F. Krebs
The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed efficiencies from 0.4 to 2 %. Then large area roll-to-roll coated modules were processed and these showed efficiencies up to 0.6 %. It is clear that further study is necessary before this type of polymer is competitive with P3HT in large area modules.
{"title":"Large area modules based on low band gap polymers","authors":"E. Bundgaard, F. Krebs","doi":"10.1109/PVSC.2010.5614677","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614677","url":null,"abstract":"The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed efficiencies from 0.4 to 2 %. Then large area roll-to-roll coated modules were processed and these showed efficiencies up to 0.6 %. It is clear that further study is necessary before this type of polymer is competitive with P3HT in large area modules.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"77 1","pages":"001064-001067"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78015922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616586
A. Kanevce, J. Olson, W. Metzger
We have modeled a Ga0.5In0.5P/GaAs/Ge triple junction solar cell, including two Esaki diodes, to analyze how performance changes with illumination intensity. As has been observed experimentally, fill factor (FF) is the primary aspect of performance that limits efficiency at high concentration levels. The FF decreases because of series resistance and barriers created by the GaAs/GaInP back surface field. By adjusting carrier concentration or the material associated with the back surface field (BSF) and the carrier concentration in the absorber, FF losses can be reduced and efficiency enhanced at high concentration levels.
{"title":"Numerical simulations of triple-junction GaInP/GaAs/Ge solar cells to provide insight into fill-factor losses at high concentration","authors":"A. Kanevce, J. Olson, W. Metzger","doi":"10.1109/PVSC.2010.5616586","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616586","url":null,"abstract":"We have modeled a Ga0.5In0.5P/GaAs/Ge triple junction solar cell, including two Esaki diodes, to analyze how performance changes with illumination intensity. As has been observed experimentally, fill factor (FF) is the primary aspect of performance that limits efficiency at high concentration levels. The FF decreases because of series resistance and barriers created by the GaAs/GaInP back surface field. By adjusting carrier concentration or the material associated with the back surface field (BSF) and the carrier concentration in the absorber, FF losses can be reduced and efficiency enhanced at high concentration levels.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"002066-002069"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78463077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614433
J. Patino, J. Tello, Johann Hernandez, C. Arredondo, Gerardo Gordillo
The purpose of this work is to introduce a novel system developed to be used as back-up of a conventional UPS, in order to increase its autonomy and to warrant continue operation for long periods of time in the case of a power failure in the public grid. The system is constituted by a conventional UPS connected in parallel to a standalone PV system and a electronic system with facilities to control the charge and discharge of the battery bank of the PV system and to keep the UPS functioning when power cut occur. These elements are interconnected through relays which are activated by digital signals from a control that was developed using virtual instrumentation.
{"title":"Development and implementation of a hybrid photovoltaic system for energy back-up","authors":"J. Patino, J. Tello, Johann Hernandez, C. Arredondo, Gerardo Gordillo","doi":"10.1109/PVSC.2010.5614433","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614433","url":null,"abstract":"The purpose of this work is to introduce a novel system developed to be used as back-up of a conventional UPS, in order to increase its autonomy and to warrant continue operation for long periods of time in the case of a power failure in the public grid. The system is constituted by a conventional UPS connected in parallel to a standalone PV system and a electronic system with facilities to control the charge and discharge of the battery bank of the PV system and to keep the UPS functioning when power cut occur. These elements are interconnected through relays which are activated by digital signals from a control that was developed using virtual instrumentation.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"002338-002341"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74893003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616779
J. Elerath
An accelerated reliability test plan was developed for trackers used in high-concentration photo-voltaic power systems. The potential failure modes of the tracker hardware were used to select the hardware that was tested. The 2-parameter Weibull distribution was used as the underlying time-to-failure distribution since all hardware failures were dominated by wear-out mechanisms. Equations used to help identify degrading bearings and gears were based on vibration frequency analysis. Results show that the accelerated life test identified wear-in as well as wear-out mechanisms. Hardware times-to-failure distributions and tracker reliability estimates were developed.
{"title":"HCPV tracker accelerated reliability tests","authors":"J. Elerath","doi":"10.1109/PVSC.2010.5616779","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616779","url":null,"abstract":"An accelerated reliability test plan was developed for trackers used in high-concentration photo-voltaic power systems. The potential failure modes of the tracker hardware were used to select the hardware that was tested. The 2-parameter Weibull distribution was used as the underlying time-to-failure distribution since all hardware failures were dominated by wear-out mechanisms. Equations used to help identify degrading bearings and gears were based on vibration frequency analysis. Results show that the accelerated life test identified wear-in as well as wear-out mechanisms. Hardware times-to-failure distributions and tracker reliability estimates were developed.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"50 4 1","pages":"000481-000486"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75677754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614152
T. Ohshima, S. Sato, C. Morioka, M. Imaizumi, T. Sugaya, S. Niki
PiN structure GaAs solar cells with In0.4Ga0.6As quantum dot layers are irradiated with electrons at 1 MeV in fluencies up to 3×1015 /cm3. The change in the electrical performance under AM0 and the quantum efficiency are investigated. The decrease in the open circuit voltage for the solar cells with quantum dot layers is smaller than that for GaAs PiN solar cells with no quantum dot layer, although no significant difference in the degradation of the short circuit current is observed between solar cells with and without quantum dot layers. As a result of quantum efficiency measurements, it is revealed that the currents generated by In0.4Ga0.6As dot layers still remain by 60 % of the initial value, even after 1 MeV electron irradiation at 3×1015 /cm2.
{"title":"Change in the electrical performance of InGaAs quantum dot solar cells due to irradiation","authors":"T. Ohshima, S. Sato, C. Morioka, M. Imaizumi, T. Sugaya, S. Niki","doi":"10.1109/PVSC.2010.5614152","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614152","url":null,"abstract":"PiN structure GaAs solar cells with In<inf>0.4</inf>Ga<inf>0.6</inf>As quantum dot layers are irradiated with electrons at 1 MeV in fluencies up to 3×10<sup>15</sup> /cm<sup>3</sup>. The change in the electrical performance under AM0 and the quantum efficiency are investigated. The decrease in the open circuit voltage for the solar cells with quantum dot layers is smaller than that for GaAs PiN solar cells with no quantum dot layer, although no significant difference in the degradation of the short circuit current is observed between solar cells with and without quantum dot layers. As a result of quantum efficiency measurements, it is revealed that the currents generated by In<inf>0.4</inf>Ga<inf>0.6</inf>As dot layers still remain by 60 % of the initial value, even after 1 MeV electron irradiation at 3×10<sup>15</sup> /cm<sup>2</sup>.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"46 1","pages":"002594-002598"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73284233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：