Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614505
Daohong Wang
A method for instantaneous measurement of PV V-I characteristic has been proposed. In the method, the PV electric load is instantaneously switched from open-circuit into short-circuit and then back into open-circuit with a semiconductor switch, and the PV V-I characteristics is obtained by using the transient PV voltage and current measured during the two switching processes. Several experiments with different types of PV have verified the proposed method. The proposed method can be used not only for on-line diagnosis of PV systems but for PV maximum power point tracking (MPPT) control. As an example to demonstrate the applications, experiments of PV MPPT control has been performed and expected results have been achieved.
{"title":"A method for instantaneous measurement of PV V-I characteristics and its application for MPPT control","authors":"Daohong Wang","doi":"10.1109/PVSC.2010.5614505","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614505","url":null,"abstract":"A method for instantaneous measurement of PV V-I characteristic has been proposed. In the method, the PV electric load is instantaneously switched from open-circuit into short-circuit and then back into open-circuit with a semiconductor switch, and the PV V-I characteristics is obtained by using the transient PV voltage and current measured during the two switching processes. Several experiments with different types of PV have verified the proposed method. The proposed method can be used not only for on-line diagnosis of PV systems but for PV maximum power point tracking (MPPT) control. As an example to demonstrate the applications, experiments of PV MPPT control has been performed and expected results have been achieved.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"26 1","pages":"002904-002907"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91021714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617007
Ihsanul Afdi Yunaz, A. Hongsingthong, Liping Zhang, S. Miyajima, M. Konagai
We have successfully fabricated zinc oxide (ZnO) films with a very high haze value using metal organic chemical vapor deposition (MOCVD) technique by conducting a glass substrate etching before film deposition. Effect of glass treatment time on the properties of ZnO films was investigated. It was found that the surface morphology of ZnO films can be modified by adjusting the glass treatment time without preserving their good transparency and electrical properties. Using boron-doped ZnO (ZnO:B) films with a high haze value as front TCO films in thin film Si solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region. Thus, the obtained ZnO:B films have a lot of potentials to be used as the front TCO layers in silicon-based thin film solar cells.
{"title":"ZnO films with very high haze ratio prepared by MOCVD technique","authors":"Ihsanul Afdi Yunaz, A. Hongsingthong, Liping Zhang, S. Miyajima, M. Konagai","doi":"10.1109/PVSC.2010.5617007","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617007","url":null,"abstract":"We have successfully fabricated zinc oxide (ZnO) films with a very high haze value using metal organic chemical vapor deposition (MOCVD) technique by conducting a glass substrate etching before film deposition. Effect of glass treatment time on the properties of ZnO films was investigated. It was found that the surface morphology of ZnO films can be modified by adjusting the glass treatment time without preserving their good transparency and electrical properties. Using boron-doped ZnO (ZnO:B) films with a high haze value as front TCO films in thin film Si solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region. Thus, the obtained ZnO:B films have a lot of potentials to be used as the front TCO layers in silicon-based thin film solar cells.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"65 1","pages":"001592-001596"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89771572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616808
G. Yordanov, O. Midtgård, Tor Oskar Saetre1
This paper presents a method for extracting physically meaningful parameters from measured I–V curves of PV modules. The 7-parameter double-exponential model is applied in the modeling. The method is based on linear fitting of semi-logarithmic plots. The paper demonstrates a new technique to estimate the series resistance of a module with high accuracy from such plots. As a result, also the reverse saturation current and the quality factor of the diffusion diode can be determined. The method is applied to outdoor I–V data from a test station with three similar, but not identical, polycrystalline-Si modules. The values of the series resistances found with this method deviate somewhat from the values found by indoor measurements by an independent laboratory. The quality factors of the diffusion diodes were in this case found to be somewhat larger than 1, indicating a good, but not perfect quality of the material.
{"title":"Extracting parameters from semi-log plots of polycrystalline silicon PV modules outdoor I–V data: Double-exponential model revisited","authors":"G. Yordanov, O. Midtgård, Tor Oskar Saetre1","doi":"10.1109/PVSC.2010.5616808","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616808","url":null,"abstract":"This paper presents a method for extracting physically meaningful parameters from measured I–V curves of PV modules. The 7-parameter double-exponential model is applied in the modeling. The method is based on linear fitting of semi-logarithmic plots. The paper demonstrates a new technique to estimate the series resistance of a module with high accuracy from such plots. As a result, also the reverse saturation current and the quality factor of the diffusion diode can be determined. The method is applied to outdoor I–V data from a test station with three similar, but not identical, polycrystalline-Si modules. The values of the series resistances found with this method deviate somewhat from the values found by indoor measurements by an independent laboratory. The quality factors of the diffusion diodes were in this case found to be somewhat larger than 1, indicating a good, but not perfect quality of the material.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"002756-002761"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89659803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617133
D. Miranda, T. Moura, R. J. Santana, G. R. Guimarães, Erich R. S. Karger, A. Diniz, J. Branco
In the present work the effect of auxiliary plasma assistance on the structure, composition and optical gap of e-beam vacuum evaporated silicon thin films is investigated. The films were deposited over glass and Silicon wafer substrates, under argon-hydrogen plasma assisted, to verify also the effect of the H2 content, at substrate temperature of 250 °C. The species present in the plasmas were investigated using Optical Emission Spectroscopy, while the films were characterized by Raman, FTIR and UV-vis spectroscopy. The results show that the deposition of a-Si:H with high hydrogen content and mc-Si:H through the used low temperature plasma assisted vacuum evaporation. The relationship between crystallinity, optical band gap and species in the Plasma is discussed, considering the effect of molecular and atomic hydrogen content in the plasma, as well as a-Si chemical annealing theories.
{"title":"mc-Si thin films by hydrogen plasma assisted vacuum evaporation","authors":"D. Miranda, T. Moura, R. J. Santana, G. R. Guimarães, Erich R. S. Karger, A. Diniz, J. Branco","doi":"10.1109/PVSC.2010.5617133","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617133","url":null,"abstract":"In the present work the effect of auxiliary plasma assistance on the structure, composition and optical gap of e-beam vacuum evaporated silicon thin films is investigated. The films were deposited over glass and Silicon wafer substrates, under argon-hydrogen plasma assisted, to verify also the effect of the H2 content, at substrate temperature of 250 °C. The species present in the plasmas were investigated using Optical Emission Spectroscopy, while the films were characterized by Raman, FTIR and UV-vis spectroscopy. The results show that the deposition of a-Si:H with high hydrogen content and mc-Si:H through the used low temperature plasma assisted vacuum evaporation. The relationship between crystallinity, optical band gap and species in the Plasma is discussed, considering the effect of molecular and atomic hydrogen content in the plasma, as well as a-Si chemical annealing theories.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"003706-003708"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89876709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614592
J. Perrenoud, S. Buecheler, L. Kranz, C. Fella, J. Skarp, A. Tiwari
CdTe solar cells with ZnS window layer deposited by ultrasonic spray pyrolysis (USP) were grown. The current density of such solar cells reached 24.7 mA/cm2 without anti reflection coating (Voc 594 mV, FF 64.2%, η 9.4%). For CdTe solar cells with CdS and ZnS window layers we quantified the Jsc loss mechanisms in detail. In order to tune the conduction band alignment, and increase the Voc, ZnO1−xSx grown by atomic layer deposition (ALD) was used.
采用超声喷雾热解法(USP)制备了具有ZnS窗层的CdTe太阳能电池。无增透涂层的太阳能电池电流密度达到24.7 mA/cm2 (Voc 594 mV, FF 64.2%， η 9.4%)。对于具有CdS和ZnS窗口层的CdTe太阳能电池，我们详细量化了Jsc损耗机制。为了调整导带取向，提高Voc，采用了原子层沉积(ALD)生长的ZnO1−xSx。
{"title":"Application of ZnO1−xSx as window layer in cadmium telluride solar cells","authors":"J. Perrenoud, S. Buecheler, L. Kranz, C. Fella, J. Skarp, A. Tiwari","doi":"10.1109/PVSC.2010.5614592","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614592","url":null,"abstract":"CdTe solar cells with ZnS window layer deposited by ultrasonic spray pyrolysis (USP) were grown. The current density of such solar cells reached 24.7 mA/cm2 without anti reflection coating (Voc 594 mV, FF 64.2%, η 9.4%). For CdTe solar cells with CdS and ZnS window layers we quantified the Jsc loss mechanisms in detail. In order to tune the conduction band alignment, and increase the Voc, ZnO1−xSx grown by atomic layer deposition (ALD) was used.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"000995-001000"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90199305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614128
H. Myers, C. Champness, Y. Tan, I. Shih
Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.
{"title":"P- to n-type conversion with sodium addition in bridgman-grown CuInSe2","authors":"H. Myers, C. Champness, Y. Tan, I. Shih","doi":"10.1109/PVSC.2010.5614128","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614128","url":null,"abstract":"Ingots containing monocrystals of CuInSe2 have been fabricated, using a Bridgman-growth procedure, in quartz ampoules, to which varying concentrations of sodium and excess selenium have been added. The CuInSe2 ingots were nominally p-type, but could be made n-type by adding sufficient sodium to the melts before growth. Small additions of excess Se required that greater additions of Na be introduced for the type conversion to occur. The occurrence of deposits found within the ampoules after growth was strongly indicative of conductivity type. Hall coefficient measurements were carried out on some samples, as were compositional analyses by SEM/EDX, revealing the grown material to be deficient in Cu, regardless of type. Additionally, analysis of the interior of an ingot uncovered no Na within the bulk material, but a significant quantity was found on the exterior surface. This marks the first time sodium was shown to reside only on surfaces, rather than within the bulk crystals, in melt-grown material where sodium was added before compound synthesis.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"000869-000872"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89257705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616544
S. Schwertheim, O. Grewe, I. Hamm, T. Mueller, R. Pichner, W. Fahrner
There are efforts to replace the classical transparent conducting coating, Indium Tin Oxide (ITO), (or other TCOs) by a new class of materials which are easier to handle and cheaper in mass production. Transparent conductive coatings are produced which consist of polymers or carbon nanotubes (CNT).
{"title":"PEDOT:PSS layers as replacements for the transparent conductive coatings of organic solar cells","authors":"S. Schwertheim, O. Grewe, I. Hamm, T. Mueller, R. Pichner, W. Fahrner","doi":"10.1109/PVSC.2010.5616544","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616544","url":null,"abstract":"There are efforts to replace the classical transparent conducting coating, Indium Tin Oxide (ITO), (or other TCOs) by a new class of materials which are easier to handle and cheaper in mass production. Transparent conductive coatings are produced which consist of polymers or carbon nanotubes (CNT).","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"62 1","pages":"001639-001642"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76823086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614511
J. Foresi, Lei Yang, P. Blumenfeld, J. Nagyvary, G. Flynn, D. Aiken
High-efficiency solar cells used in Concentrator Photovoltaic (CPV) Systems require reliable, high-performance electrical, thermal and optical interfaces. EMCORE has developed standard CPV receivers that provide these interfaces. These standard designs provide a tool for CPV system developers to validate their novel system designs without the cost and schedule impact associated with custom receiver design. Standard receivers based on EMCORE's 1cm × 1cm and 0.5cm × 0.5cm triple junction solar cells will be reviewed. The standard receivers incorporate design rules developed by EMCORE's CPV system development team and are implemented using Curamik's aluminum oxide direct-bond-copper (dbc) substrates. The designs include Curamik's dimple technology for stress relief. The dbc substrates provide the high electrical stand-off and low resistance required for CPV applications. EMCORE's designs incorporate box connectors for wire interconnection to the receivers and a bypass diode that allows for string operation during partial shadow conditions. All components are attached using a solder reflow process that provides low void content bonding and excellent thermal conductivity between the solar cell and its substrate. Data gathered during receiver assembly, including x-ray data showing void content, will be reviewed. Methods and results for thermal resistance measurements will be presented. In addition we will review features included in the dbc that allow for component placement control. Receiver performance data as measured by HIPSS (High-Intensity Pulsed Solar Simulator) at 1000X concentration will also be reviewed. EMCORE is currently providing pre-qualification samples of these receivers to CPV system developers while qualification of the receivers is completed. The qualification test plan for the receivers will be reviewed and preliminary data from the qualification tests will be presented.
{"title":"EMCORE receivers for CPV system development","authors":"J. Foresi, Lei Yang, P. Blumenfeld, J. Nagyvary, G. Flynn, D. Aiken","doi":"10.1109/PVSC.2010.5614511","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614511","url":null,"abstract":"High-efficiency solar cells used in Concentrator Photovoltaic (CPV) Systems require reliable, high-performance electrical, thermal and optical interfaces. EMCORE has developed standard CPV receivers that provide these interfaces. These standard designs provide a tool for CPV system developers to validate their novel system designs without the cost and schedule impact associated with custom receiver design. Standard receivers based on EMCORE's 1cm × 1cm and 0.5cm × 0.5cm triple junction solar cells will be reviewed. The standard receivers incorporate design rules developed by EMCORE's CPV system development team and are implemented using Curamik's aluminum oxide direct-bond-copper (dbc) substrates. The designs include Curamik's dimple technology for stress relief. The dbc substrates provide the high electrical stand-off and low resistance required for CPV applications. EMCORE's designs incorporate box connectors for wire interconnection to the receivers and a bypass diode that allows for string operation during partial shadow conditions. All components are attached using a solder reflow process that provides low void content bonding and excellent thermal conductivity between the solar cell and its substrate. Data gathered during receiver assembly, including x-ray data showing void content, will be reviewed. Methods and results for thermal resistance measurements will be presented. In addition we will review features included in the dbc that allow for component placement control. Receiver performance data as measured by HIPSS (High-Intensity Pulsed Solar Simulator) at 1000X concentration will also be reviewed. EMCORE is currently providing pre-qualification samples of these receivers to CPV system developers while qualification of the receivers is completed. The qualification test plan for the receivers will be reviewed and preliminary data from the qualification tests will be presented.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"000209-000212"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76946226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5615844
Daisuke Hamashita, S. Miyajima, A. Yamada, M. Konagai
Aluminumm doped (Al-doped) p-type nc-3C-SiC:H films were successfully depsoited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at a low substrate temperature of about 360 °C using dimethylaluminum hydride (DMAH) as an Al dopant. Dark conductivity and activation energy of the films were strongly influenced by H2/MMS gas flow ratio. A dark conductivity of a 27-nm-thick film was improved from 1.5×10−5 to 6.9×10−4 S/cm by changing H2/MMS gas flow ratio from 6.4×103 to 8.5×103. Activation energy was found to be 265 meV for the optimized Al-doped nc-3C-SiC:H. Clear rectifying characteristics of J-V characteristics of Al-doped nc-3C-SiC:H / n-type c-Si heterojunction diodes confirmed the p-type nature of Al-doped nc-3C-SiC:H. These result indicates that Al-doped nc-3C-SiC:H is promising for p-type window layer of a top cell of multi-junction silicon-based thin-film solar cells.
{"title":"Aluminum doped hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD for p-type window layer of silicon based thin-film solar cells","authors":"Daisuke Hamashita, S. Miyajima, A. Yamada, M. Konagai","doi":"10.1109/PVSC.2010.5615844","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5615844","url":null,"abstract":"Aluminumm doped (Al-doped) p-type nc-3C-SiC:H films were successfully depsoited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at a low substrate temperature of about 360 °C using dimethylaluminum hydride (DMAH) as an Al dopant. Dark conductivity and activation energy of the films were strongly influenced by H<inf>2</inf>/MMS gas flow ratio. A dark conductivity of a 27-nm-thick film was improved from 1.5×10<sup>−5</sup> to 6.9×10<sup>−4</sup> S/cm by changing H<inf>2</inf>/MMS gas flow ratio from 6.4×10<sup>3</sup> to 8.5×10<sup>3</sup>. Activation energy was found to be 265 meV for the optimized Al-doped nc-3C-SiC:H. Clear rectifying characteristics of J-V characteristics of Al-doped nc-3C-SiC:H / n-type c-Si heterojunction diodes confirmed the p-type nature of Al-doped nc-3C-SiC:H. These result indicates that Al-doped nc-3C-SiC:H is promising for p-type window layer of a top cell of multi-junction silicon-based thin-film solar cells.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"94 1","pages":"003667-003670"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78079846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel method for producing a highly-(100) orientated, large grain of poly-Si seed layer on glass by multi-round aluminum-induced crystallization (AIC) is developed. A flat 200nm poly-Si layer was first fabricated by regular AIC process to be a based layer. The second round AIC process was carried out immediately on the based layer to epitaxially grow up to a 400nm poly-Si layer by solid phase epitaxy (SPE) mechanism. The structure of enlarged epitaxial grain was examined by transmission electron microscopy (TEM), the orientation map as well as histogram of grain size from large area were performed by electron backscatter diffraction (EBSD), and the crystallinity of multi-round AIC was verified by Raman spectrometry. The lateral growth and grain suppression can be clearly observed in cross-sectional TEM analysis. The average grain size can be determined from analysis of histogram. The speed of epitaxial growth is strongly influenced by the orientation of the growth plane. We utilize this characteristic to promote the {100} proportion and reduce others to achieve a highly oriented seed-layer for followed thickening step. The population of {100} crystallographic plane is obtained statistically from orientation map and a pole figure analysis. The mechanism of the multi-round AIC will be discussed in detail in the conference.
{"title":"Orientation selected epitaxy for grain enlargement of AIC poly-Si seed layers","authors":"Sung-Yen Wei, Sheng-min Yu, Hung-Hsi Lin, Wei Chen, Chun-Jen Chen, Tzer-Shen Lin, C. Tsai, Fu-Rong Chen","doi":"10.1109/PVSC.2010.5617013","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617013","url":null,"abstract":"A novel method for producing a highly-(100) orientated, large grain of poly-Si seed layer on glass by multi-round aluminum-induced crystallization (AIC) is developed. A flat 200nm poly-Si layer was first fabricated by regular AIC process to be a based layer. The second round AIC process was carried out immediately on the based layer to epitaxially grow up to a 400nm poly-Si layer by solid phase epitaxy (SPE) mechanism. The structure of enlarged epitaxial grain was examined by transmission electron microscopy (TEM), the orientation map as well as histogram of grain size from large area were performed by electron backscatter diffraction (EBSD), and the crystallinity of multi-round AIC was verified by Raman spectrometry. The lateral growth and grain suppression can be clearly observed in cross-sectional TEM analysis. The average grain size can be determined from analysis of histogram. The speed of epitaxial growth is strongly influenced by the orientation of the growth plane. We utilize this characteristic to promote the {100} proportion and reduce others to achieve a highly oriented seed-layer for followed thickening step. The population of {100} crystallographic plane is obtained statistically from orientation map and a pole figure analysis. The mechanism of the multi-round AIC will be discussed in detail in the conference.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"001586-001588"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78148058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：