Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058749
A. Dasgupta, A. Disserand, J. Nebus, Audrey Martin, P. Bouysse, P. Medrel, R. Quéré
This paper presents a performance evaluation of an original highly efficient and linear GaN-HEMT Vector Power Modulator (VPM) based on the design of a two-stage saturated variable gain (SVG) amplifier and a multi-level discrete supply modulator (SM). The proposed novel architecture for transforming a digital baseband data stream into an RF Vector modulated power waveform (RF Power DAC) is validated using a specific laboratory test bench. The main objective of this study is to merge signal modulation and DC to RF energy conversion functions into a single and compact GaN based mixer-less circuit. Using high-voltage 50 V GaN technology, a 20 W S-band vector power modulator having overall average PAE of around 40 % is reported. The concept demonstrator is experimentally validated up to 100 Msymbols/sec 16-QAM modulation scheme. Functional time alignment with phase and amplitude compensation procedure focusing on measured constellation at 40 Msymbols/sec enables to reach excellent EVM performances of around 3.2 %.
基于两级饱和可变增益放大器(SVG)和多级离散电源调制器(SM)的设计，对一种新颖的高效线性GaN-HEMT矢量功率调制器(VPM)进行了性能评估。所提出的将数字基带数据流转换为RF矢量调制功率波形(RF power DAC)的新架构使用特定的实验室测试台进行了验证。本研究的主要目标是将信号调制和直流到射频能量转换功能合并到一个单一紧凑的基于GaN的无混频器电路中。采用高压50v GaN技术，实现了一种20 W s波段矢量功率调制器，其总体平均PAE约为40%。该概念演示器通过实验验证了高达100 m符号/秒的16-QAM调制方案。功能时间对准与相位和振幅补偿程序，聚焦于40 m符号/秒的测量星座，可以达到约3.2%的优秀EVM性能。
{"title":"High speed and highly efficient S-band 20 W mixerless vector power modulator","authors":"A. Dasgupta, A. Disserand, J. Nebus, Audrey Martin, P. Bouysse, P. Medrel, R. Quéré","doi":"10.1109/MWSYM.2017.8058749","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058749","url":null,"abstract":"This paper presents a performance evaluation of an original highly efficient and linear GaN-HEMT Vector Power Modulator (VPM) based on the design of a two-stage saturated variable gain (SVG) amplifier and a multi-level discrete supply modulator (SM). The proposed novel architecture for transforming a digital baseband data stream into an RF Vector modulated power waveform (RF Power DAC) is validated using a specific laboratory test bench. The main objective of this study is to merge signal modulation and DC to RF energy conversion functions into a single and compact GaN based mixer-less circuit. Using high-voltage 50 V GaN technology, a 20 W S-band vector power modulator having overall average PAE of around 40 % is reported. The concept demonstrator is experimentally validated up to 100 Msymbols/sec 16-QAM modulation scheme. Functional time alignment with phase and amplitude compensation procedure focusing on measured constellation at 40 Msymbols/sec enables to reach excellent EVM performances of around 3.2 %.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90957648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058781
Bharatha Kumar Thangarasu, Kaixue Ma, K. Yeo
A 8 Gbit/s current-mode automatic gain control (CMAGC) amplifier with a reconfigurability between an internal closed loop control (analog AGC) and external baseband feedback control (digital AGC) is introduced in this paper. By using the p-n diode in CMOS technology, this CMAGC achieves an exponential variable gain control and a logarithmic power detection with more than 24 dB dynamic range. The proposed CMAGC consumes a maximum 48 mW dc power from a 1.2 V supply voltage and the core design occupies only 0.029 mm2 die area.
{"title":"A 0.029 mm2 8 Gbit/s current-mode AGC amplifier with reconfigurable closed-loop control in 65 nm CMOS","authors":"Bharatha Kumar Thangarasu, Kaixue Ma, K. Yeo","doi":"10.1109/MWSYM.2017.8058781","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058781","url":null,"abstract":"A 8 Gbit/s current-mode automatic gain control (CMAGC) amplifier with a reconfigurability between an internal closed loop control (analog AGC) and external baseband feedback control (digital AGC) is introduced in this paper. By using the p-n diode in CMOS technology, this CMAGC achieves an exponential variable gain control and a logarithmic power detection with more than 24 dB dynamic range. The proposed CMAGC consumes a maximum 48 mW dc power from a 1.2 V supply voltage and the core design occupies only 0.029 mm2 die area.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73042777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058584
S. Sengupta, D. Jackson, S. Long
A two-dimensional (2D) periodic leaky-wave antenna consisting of a periodic distribution of rectangular patches on a grounded dielectric substrate, excited by a narrow slot in the ground plane, is studied here. The TM0 surface wave that is normally supported by a grounded dielectric substrate is perturbed by the presence of the periodic patches to produce radially-propagating leaky waves. In addition to making a novel microwave antenna structure, this design is motivated by the phenomena of directive beaming and enhanced transmission observed in plasmonic structures in the optical regime.
{"title":"Propagation characteristics of leaky waves on a 2D periodic leaky-wave antenna","authors":"S. Sengupta, D. Jackson, S. Long","doi":"10.1109/MWSYM.2017.8058584","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058584","url":null,"abstract":"A two-dimensional (2D) periodic leaky-wave antenna consisting of a periodic distribution of rectangular patches on a grounded dielectric substrate, excited by a narrow slot in the ground plane, is studied here. The TM0 surface wave that is normally supported by a grounded dielectric substrate is perturbed by the presence of the periodic patches to produce radially-propagating leaky waves. In addition to making a novel microwave antenna structure, this design is motivated by the phenomena of directive beaming and enhanced transmission observed in plasmonic structures in the optical regime.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73202677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058811
Sheikh Nijam Ali, Pawan Agarwal, Joe Baylon, D. Heo
A frequency reconfigurable high efficiency power amplifier (PA) is presented for 5G applications using on-chip switchable matching networks. To cope with increased gate-drain capacitance (Cgd) in deep submicron CMOS PA design at mm-Wave frequencies, a tunable coupling-coefficient based transformer is proposed. This technique dramatically improves the neutralization of Cgd in a common-source PA while maximizing output power and efficiency. To reconfigure the PA between 24 GHz and 28 GHz, a low-loss reconfigurable matching topology is adopted using a switched substrate-shield inductor. Using the proposed techniques, a single-stage reconfigurable class-AB PA is demonstrated in 65 nm CMOS, achieving 42.6% maximum power added efficiency (PAEmax), 14.7 dBm maximum output power (Po, max) at 24 GHz and 40.1% PAEmax, 14.4 dBm Po, max at 28 GHz. The PA occupies a core area of 0.11 mm2 only.
{"title":"Reconfigurable high efficiency power amplifier with tunable coupling coefficient based transformer for 5G applications","authors":"Sheikh Nijam Ali, Pawan Agarwal, Joe Baylon, D. Heo","doi":"10.1109/MWSYM.2017.8058811","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058811","url":null,"abstract":"A frequency reconfigurable high efficiency power amplifier (PA) is presented for 5G applications using on-chip switchable matching networks. To cope with increased gate-drain capacitance (Cgd) in deep submicron CMOS PA design at mm-Wave frequencies, a tunable coupling-coefficient based transformer is proposed. This technique dramatically improves the neutralization of Cgd in a common-source PA while maximizing output power and efficiency. To reconfigure the PA between 24 GHz and 28 GHz, a low-loss reconfigurable matching topology is adopted using a switched substrate-shield inductor. Using the proposed techniques, a single-stage reconfigurable class-AB PA is demonstrated in 65 nm CMOS, achieving 42.6% maximum power added efficiency (PAEmax), 14.7 dBm maximum output power (Po, max) at 24 GHz and 40.1% PAEmax, 14.4 dBm Po, max at 28 GHz. The PA occupies a core area of 0.11 mm2 only.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87552046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058935
Jin Li, Cheng Guo, Lijian Mao, Jun Xu
A new class of hemispherical resonators featuring a high unloaded quality factor (Qu) and a compact geometrical configuration is proposed for the first time for 3-D printed bandpass filter (BPF) applications. The hemispherical resonator exhibits a volume only half that of a spherical one at a same dominant-mode resonant frequency, without losing its intrinsic characteristic of a high Qu. Electromagnetic field analysis of the hemi-spherical resonator is expounded, and second-order BPFs based on such resonators are designed at X and Ka bands. The Ka-band second-order BPF is manufactured with a high-temperature-resistant ceramic-filled resin using a fast and low-cost stereo-lithography-based 3-D printing technique for validation purpose. The filter's surface metallization is achieved by employing electroless copper/silver plating, which contributes to an improved fabrication accuracy in thickness and uniformity of the conductive layer. The RF-measured results demonstrate the Ka-band filter an insertion loss of 0.56–0.7 dB at 31.95–32.13 GHz, a passband return loss of better than 17 dB, and a small frequency shift of 0.04%.
{"title":"Compact high-Q hemispherical resonators for 3-D printed bandpass filter applications","authors":"Jin Li, Cheng Guo, Lijian Mao, Jun Xu","doi":"10.1109/MWSYM.2017.8058935","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058935","url":null,"abstract":"A new class of hemispherical resonators featuring a high unloaded quality factor (Qu) and a compact geometrical configuration is proposed for the first time for 3-D printed bandpass filter (BPF) applications. The hemispherical resonator exhibits a volume only half that of a spherical one at a same dominant-mode resonant frequency, without losing its intrinsic characteristic of a high Qu. Electromagnetic field analysis of the hemi-spherical resonator is expounded, and second-order BPFs based on such resonators are designed at X and Ka bands. The Ka-band second-order BPF is manufactured with a high-temperature-resistant ceramic-filled resin using a fast and low-cost stereo-lithography-based 3-D printing technique for validation purpose. The filter's surface metallization is achieved by employing electroless copper/silver plating, which contributes to an improved fabrication accuracy in thickness and uniformity of the conductive layer. The RF-measured results demonstrate the Ka-band filter an insertion loss of 0.56–0.7 dB at 31.95–32.13 GHz, a passband return loss of better than 17 dB, and a small frequency shift of 0.04%.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89985401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8059085
Peng Luo, O. Bengtsson, M. Rudolph
This paper addresses a novel approach to account for trapping effects in the large-signal description of GaN HEMTs. Instead of relying on an internal effective gate voltage, which is not very intuitive, it is investigated how the Chalmers (Angelov) model parameters are altered by trapping. It is verified that such an approach enables reliable load-pull prediction over a wide range of drain bias voltages. In addition, appropriately scaled parameters are shown to allow for a good estimation of large-signal performance even if the model itseff misses a dedicated trapping description.
{"title":"A drain lag model for GaN HEMT based on Chalmers model and pulsed S-parameter measurements","authors":"Peng Luo, O. Bengtsson, M. Rudolph","doi":"10.1109/MWSYM.2017.8059085","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059085","url":null,"abstract":"This paper addresses a novel approach to account for trapping effects in the large-signal description of GaN HEMTs. Instead of relying on an internal effective gate voltage, which is not very intuitive, it is investigated how the Chalmers (Angelov) model parameters are altered by trapping. It is verified that such an approach enables reliable load-pull prediction over a wide range of drain bias voltages. In addition, appropriately scaled parameters are shown to allow for a good estimation of large-signal performance even if the model itseff misses a dedicated trapping description.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74703680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058590
Yuan Liu, A. Wichman, B. Isaac, J. Kalkavage, E. Adles, T. Clark, J. Klamkin
An optical ring resonator (ORR) based integrated optical beamforming network (OBFN) for a W-band millimeter wave phased array antenna is reported. The delay response of a 3-ORR delay line is optimized and dynamic tuning ranges of 208.7 ps and 172.4 ps for the true time delay bandwidths of 6.3 GHz and 8.7 GHz are achieved. Moreover, all of the delay paths are successfully tuned with 4. 2 ps delay difference from the neighboring paths. Eye diagrams of a 3 Gbps NRZ OOK modulated signal are measured to show that no noticeable signal deterioration is induced by the OBFN chip.
{"title":"Ring resonator based integrated optical beam forming network with true time delay for mmW communications","authors":"Yuan Liu, A. Wichman, B. Isaac, J. Kalkavage, E. Adles, T. Clark, J. Klamkin","doi":"10.1109/MWSYM.2017.8058590","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058590","url":null,"abstract":"An optical ring resonator (ORR) based integrated optical beamforming network (OBFN) for a W-band millimeter wave phased array antenna is reported. The delay response of a 3-ORR delay line is optimized and dynamic tuning ranges of 208.7 ps and 172.4 ps for the true time delay bandwidths of 6.3 GHz and 8.7 GHz are achieved. Moreover, all of the delay paths are successfully tuned with 4. 2 ps delay difference from the neighboring paths. Eye diagrams of a 3 Gbps NRZ OOK modulated signal are measured to show that no noticeable signal deterioration is induced by the OBFN chip.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79929118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058953
Wen Huang, Jin Zhou, Paul J. Froeter, Kathy Walsh, Siyu Liu, J. Michaels, Moyang Li, S. Gong, Xiuling Li
On-chip copper (Cu) based self-rolled-up membrane (S-RuM) inductors are demonstrated for the first time. Compared to the gold (Au) based S-RuM inductor, device structures and fabrication processes are re-designed to realize CMOS compatibility by switching conduction metal to Cu and overcoming related processing challenges. Performance enhancements include ∼44% reduction of conduction layer resistivity compared to Au-based with the same thickness, and a clear path to 100% fabrication yield are achieved. RF measurement shows as high as ∼ 61nH/mm2 inductance density with just a 2-turn structure for these air-core S-RuM inductors. The achieved inductance is in the range from 0.3nH to 1nH. The best self-resonant-frequency (SRF) and quality factor (Q factor) of 1nH device is ∼23GHz and ∼2.4@5GHz, respectively. Much better performance can be readily obtained by rolling up more turns and integrating soft magnetic material thin film and core. Results show that Cu S-RuM inductor is very promising to replace on-chip planar inductor with better performance as a new industry standard.
{"title":"CMOS-compatible on-chip self-rolled-up inductors for RF/mm-wave applications","authors":"Wen Huang, Jin Zhou, Paul J. Froeter, Kathy Walsh, Siyu Liu, J. Michaels, Moyang Li, S. Gong, Xiuling Li","doi":"10.1109/MWSYM.2017.8058953","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058953","url":null,"abstract":"On-chip copper (Cu) based self-rolled-up membrane (S-RuM) inductors are demonstrated for the first time. Compared to the gold (Au) based S-RuM inductor, device structures and fabrication processes are re-designed to realize CMOS compatibility by switching conduction metal to Cu and overcoming related processing challenges. Performance enhancements include ∼44% reduction of conduction layer resistivity compared to Au-based with the same thickness, and a clear path to 100% fabrication yield are achieved. RF measurement shows as high as ∼ 61nH/mm2 inductance density with just a 2-turn structure for these air-core S-RuM inductors. The achieved inductance is in the range from 0.3nH to 1nH. The best self-resonant-frequency (SRF) and quality factor (Q factor) of 1nH device is ∼23GHz and ∼2.4@5GHz, respectively. Much better performance can be readily obtained by rolling up more turns and integrating soft magnetic material thin film and core. Results show that Cu S-RuM inductor is very promising to replace on-chip planar inductor with better performance as a new industry standard.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83044140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058947
M. Ohira, Ao Yamashita, Zhewang Ma, Xiaolong Wang
A novel eigenmode-based neural network (NN) for a fully automated design of microstrip bandpass filter (BPF) is proposed in this paper. The NN is now useful for BPF designs because a part of design procedure can be automated. Although the design time is reduced by the NN, an extra structural optimization is still needed as post processing. This is because a passband response is degraded by undesired but intrinsic cross couplings that are not considered in filter circuit synthesis. No fully automated BPF design techniques have been developed yet. In the proposed method, the NN is constructed based on the coupling matrix of transversal array filter, which can evaluate all the couplings between resonators as eigenmodes appearing in BPF. As examples, two third-order parallel-coupled microstrip BPFs are automatically designed with the proposed NN. The effectiveness of the proposed NN is verified numerically and experimentally.
{"title":"A novel eigenmode-based neural network for fully automated microstrip bandpass filter design","authors":"M. Ohira, Ao Yamashita, Zhewang Ma, Xiaolong Wang","doi":"10.1109/MWSYM.2017.8058947","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058947","url":null,"abstract":"A novel eigenmode-based neural network (NN) for a fully automated design of microstrip bandpass filter (BPF) is proposed in this paper. The NN is now useful for BPF designs because a part of design procedure can be automated. Although the design time is reduced by the NN, an extra structural optimization is still needed as post processing. This is because a passband response is degraded by undesired but intrinsic cross couplings that are not considered in filter circuit synthesis. No fully automated BPF design techniques have been developed yet. In the proposed method, the NN is constructed based on the coupling matrix of transversal array filter, which can evaluate all the couplings between resonators as eigenmodes appearing in BPF. As examples, two third-order parallel-coupled microstrip BPFs are automatically designed with the proposed NN. The effectiveness of the proposed NN is verified numerically and experimentally.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87690377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8059097
S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson
Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors that are used to tune the load impedance for GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modulator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below −45 dB.
{"title":"Thick-film MIM BST varactors for GaN power amplifiers with discrete dynamic load modulation","authors":"S. Preis, D. Kienemund, N. Wolff, H. Maune, R. Jakoby, W. Heinrich, O. Bengtsson","doi":"10.1109/MWSYM.2017.8059097","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059097","url":null,"abstract":"Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed MIM thick-film BST varactors that are used to tune the load impedance for GaN HEMTs. The varactor tuning voltage is supplied in discrete steps using a high-speed GaN-based modulator. Modulated measurements with LTE and WCDMA signals show, for the first time, the functionality of a BST-based load modulation system and the power consumption of the load-modulation in dynamic operation. Using discrete dynamic load modulation, an average PAE of 27.3% was measured for the LTE signal with an ACLR below −45 dB.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88051202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：