Pub Date : 2017-10-04DOI: 10.1109/MWSYM.2017.8058815
D. Lioubtchenko, I. Anoshkin, I. Nefedova, J. Oberhammer, A. Räisänen
Phase shifting in a dielectric rod waveguide (DRW), loaded with carbon nanotube (CNT) layers of different thickness, was studied experimentally under light illumination in the frequency range of 75–110 GHz. The dependence of efficiency of the phase shifting, in terms of phase shift per light intensity and millimeter wave attenuation, on the optical transparency of the CNT-layer is investigated in this paper. The best result, a phase shifter of 0–15° with less than 0.1 dB additional signal loss in the W-band was achieved for a 95% transparent CNT layer at 23 mW/mm2 light intensity of a tungsten halogen lamp (main radiation spectrum is 550–680 nm). The overall insertion loss of the phase shifter including two DRW tapering sections serving as transitions to rectangular waveguides are 3 to 5 dB in the W-band, about 2 dB is attributed to the CNT DRW section. This comprises, for the first time, an optically-controlled CNT-based DRW phase shifter with phase shift and insertion loss levels suitable for practical applications.
{"title":"W-band phase shifter based on optimized optically controlled carbon nanotube layer","authors":"D. Lioubtchenko, I. Anoshkin, I. Nefedova, J. Oberhammer, A. Räisänen","doi":"10.1109/MWSYM.2017.8058815","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058815","url":null,"abstract":"Phase shifting in a dielectric rod waveguide (DRW), loaded with carbon nanotube (CNT) layers of different thickness, was studied experimentally under light illumination in the frequency range of 75–110 GHz. The dependence of efficiency of the phase shifting, in terms of phase shift per light intensity and millimeter wave attenuation, on the optical transparency of the CNT-layer is investigated in this paper. The best result, a phase shifter of 0–15° with less than 0.1 dB additional signal loss in the W-band was achieved for a 95% transparent CNT layer at 23 mW/mm2 light intensity of a tungsten halogen lamp (main radiation spectrum is 550–680 nm). The overall insertion loss of the phase shifter including two DRW tapering sections serving as transitions to rectangular waveguides are 3 to 5 dB in the W-band, about 2 dB is attributed to the CNT DRW section. This comprises, for the first time, an optically-controlled CNT-based DRW phase shifter with phase shift and insertion loss levels suitable for practical applications.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75813790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-04DOI: 10.1109/MWSYM.2017.8059018
T. Umezawa, E. Hase, A. Kanno, A. Matsumoto, K. Akahane, N. Yamamoto, T. Kawanishi
We present a 100-GHz integrated photoreceiver using an optical-to-radio converter and an enhancement-mode PHEMT amplifier driven by all optical resources without an external electric power supply. Technology for the simultaneous generation of radio and power was developed using a zero-bias operational uni-travelling carrier (UTC) high-speed photodetector. To improve the optical-to-electrical conversion efficiency, a 110-GHz enhancement-mode InP-PHEMT amplifier was also newly developed, which operates using an internal electric power supply in an optical-to-radio converter. Using a hybrid integration based on all optical resources, a +5.5 dBm RF output at 97 GHz was successfully achieved through the optical-to-radio conversion process. Herein, the two key devices and the integrated photoreceiver are discussed.
{"title":"100-GHz integrated photoreceiver using optical-to-radio converter and enhancement mode PHEMT amplifier driven by photonic power supply","authors":"T. Umezawa, E. Hase, A. Kanno, A. Matsumoto, K. Akahane, N. Yamamoto, T. Kawanishi","doi":"10.1109/MWSYM.2017.8059018","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059018","url":null,"abstract":"We present a 100-GHz integrated photoreceiver using an optical-to-radio converter and an enhancement-mode PHEMT amplifier driven by all optical resources without an external electric power supply. Technology for the simultaneous generation of radio and power was developed using a zero-bias operational uni-travelling carrier (UTC) high-speed photodetector. To improve the optical-to-electrical conversion efficiency, a 110-GHz enhancement-mode InP-PHEMT amplifier was also newly developed, which operates using an internal electric power supply in an optical-to-radio converter. Using a hybrid integration based on all optical resources, a +5.5 dBm RF output at 97 GHz was successfully achieved through the optical-to-radio conversion process. Herein, the two key devices and the integrated photoreceiver are discussed.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82563490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-04DOI: 10.1109/MWSYM.2017.8059107
T. Kawajiri, H. Ishikuro
This paper presents a fast response wireless power delivery system with open loop dynamic transmitter voltage scaling technique to keep power efficiency in wide load range. In this technique, according to change of receiver side power consumption, the driving voltage of the transmitter (TX) coil is properly adjusted to control transmission power. The transmitting power and switching loss can be reduced in proportion to the square of the driving voltage. Therefore, it can improve power efficiency. To enhance power control speed, the driving voltage is not locally regulated but automatically determined by the feedback loop of the total WPT system. Fabricated test chips in 180-nm LDMOS process achieved maximum power efficiency of 50.9% when the output power is 0.5W. The output power ranges from 0.03W to 0.5W. The output voltage ripple is kept within 3.5% even when the output power is abruptly changed by one order of magnitude.
{"title":"Open loop dynamic transmitter voltage scaling for fast response and wide load range power efficient WPT system","authors":"T. Kawajiri, H. Ishikuro","doi":"10.1109/MWSYM.2017.8059107","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059107","url":null,"abstract":"This paper presents a fast response wireless power delivery system with open loop dynamic transmitter voltage scaling technique to keep power efficiency in wide load range. In this technique, according to change of receiver side power consumption, the driving voltage of the transmitter (TX) coil is properly adjusted to control transmission power. The transmitting power and switching loss can be reduced in proportion to the square of the driving voltage. Therefore, it can improve power efficiency. To enhance power control speed, the driving voltage is not locally regulated but automatically determined by the feedback loop of the total WPT system. Fabricated test chips in 180-nm LDMOS process achieved maximum power efficiency of 50.9% when the output power is 0.5W. The output power ranges from 0.03W to 0.5W. The output voltage ripple is kept within 3.5% even when the output power is abruptly changed by one order of magnitude.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83191537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-04DOI: 10.1109/MWSYM.2017.8059043
R. Bagger, H. Sjöland
The performance of broadband microwave 40 W and 55 W LDMOS integrated power amplifiers is reported. A 30 V LDMOS process with 500 nm gate length was used for the design. Single and dual die packages were evaluated. A dual die package provides flexibility in output power and efficiency depending on combiner topology at the input and output of the circuit. Different saturated power and efficiency are obtained for different classes, Class A, AB and B operation and for different combiners, Wilkinson, quadrature or balun. Moreover, dual die in Doherty configuration provides a compact solution for better back-off efficiency in a symmetrical / asymmetrical topology. The 40 W design demonstrates 24 %, 1 dB fractional bandwidth around 2.1 GHz, and power added efficiency of 48 % at P-1 dB of 50 W. It showed excellent back-off linearity and best in class memory effect over frequency and temperature. The 55 W design has 28 %, 1 dB fractional bandwidth around 2.2 GHz, and power added efficiency of 49 % at P-1 dB equal to 63 W.
{"title":"Broadband LDMOS 40 W and 55 W integrated power amplifiers","authors":"R. Bagger, H. Sjöland","doi":"10.1109/MWSYM.2017.8059043","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059043","url":null,"abstract":"The performance of broadband microwave 40 W and 55 W LDMOS integrated power amplifiers is reported. A 30 V LDMOS process with 500 nm gate length was used for the design. Single and dual die packages were evaluated. A dual die package provides flexibility in output power and efficiency depending on combiner topology at the input and output of the circuit. Different saturated power and efficiency are obtained for different classes, Class A, AB and B operation and for different combiners, Wilkinson, quadrature or balun. Moreover, dual die in Doherty configuration provides a compact solution for better back-off efficiency in a symmetrical / asymmetrical topology. The 40 W design demonstrates 24 %, 1 dB fractional bandwidth around 2.1 GHz, and power added efficiency of 48 % at P-1 dB of 50 W. It showed excellent back-off linearity and best in class memory effect over frequency and temperature. The 55 W design has 28 %, 1 dB fractional bandwidth around 2.2 GHz, and power added efficiency of 49 % at P-1 dB equal to 63 W.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76540826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-04DOI: 10.1109/MWSYM.2017.8058651
C. Chou, Wen-Chian Lai, Tzuen-Hsi Huang, H. Chuang
This paper presents a V-Band logarithmic power detector fabricated in 90-nm CMOS technology. The topology of successive detection logarithmic amplifier (SDLA) is adopted for high dynamic range. Instead of using traditional differential limiting amplifiers, millimeter-wave (MMW) amplifiers are applied for the gain cells to achieve the desired performance. A three-stage SDLA test key was implemented. The measured results at 52 GHz show that the dynamic range is 50 dB and the logarithmic errors are within ±1.5 dB. From 50 to 62 GHz, the dynamic range is better than 35 dB, and the logarithmic errors are within ±2 dB. The total power consumption and chip size are 20 mW and 0.66 mm2, respectively. Compared to the previously reported millimeter-wave (MMW) power detectors, the proposed work features a wider dynamic range and reasonably linear logarithmic curve response to RF input power.
{"title":"A low minimum detectable power, high dynamic range, V-Band CMOS millimeter-wave logarithmic power detector","authors":"C. Chou, Wen-Chian Lai, Tzuen-Hsi Huang, H. Chuang","doi":"10.1109/MWSYM.2017.8058651","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058651","url":null,"abstract":"This paper presents a V-Band logarithmic power detector fabricated in 90-nm CMOS technology. The topology of successive detection logarithmic amplifier (SDLA) is adopted for high dynamic range. Instead of using traditional differential limiting amplifiers, millimeter-wave (MMW) amplifiers are applied for the gain cells to achieve the desired performance. A three-stage SDLA test key was implemented. The measured results at 52 GHz show that the dynamic range is 50 dB and the logarithmic errors are within ±1.5 dB. From 50 to 62 GHz, the dynamic range is better than 35 dB, and the logarithmic errors are within ±2 dB. The total power consumption and chip size are 20 mW and 0.66 mm2, respectively. Compared to the previously reported millimeter-wave (MMW) power detectors, the proposed work features a wider dynamic range and reasonably linear logarithmic curve response to RF input power.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77963725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058950
S. Koziel, P. Kurgan, John W. Handler
In this paper, we discuss multi-objective design optimization of planar inductors using surrogate modeling techniques. The goal is to identify the best possible trade-offs between the quality factor of the inductor and its size while maintaining a required value of the inductance at a given operating frequency. The design problem is formulated as a mixed-integer task involving geometry parameters as well as the number of inductor windings. The initial Pareto front is found by optimizing a data-driven surrogate of the structure at hand, further refined by means of response correction techniques. Our considerations are illustrated using a 3.5-nH spiral inductor implemented in 65-nm CMOS technology.
{"title":"Multi-objective mixed-integer design optimization of planar inductors using surrogate modeling techniques","authors":"S. Koziel, P. Kurgan, John W. Handler","doi":"10.1109/MWSYM.2017.8058950","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058950","url":null,"abstract":"In this paper, we discuss multi-objective design optimization of planar inductors using surrogate modeling techniques. The goal is to identify the best possible trade-offs between the quality factor of the inductor and its size while maintaining a required value of the inductance at a given operating frequency. The design problem is formulated as a mixed-integer task involving geometry parameters as well as the number of inductor windings. The initial Pareto front is found by optimizing a data-driven surrogate of the structure at hand, further refined by means of response correction techniques. Our considerations are illustrated using a 3.5-nH spiral inductor implemented in 65-nm CMOS technology.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85906607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058583
Jie Zhou, H. Qian, Darong Huang, Xun Luo
In this paper, an ultra-wideband (UWB) Wilkinson power divider with ultra-narrow dual-notched bands is proposed. The multi-mode UWB characteristic is achieved using stepped-impedance open-circuited stub (SIOS) and broadside-coupled microstrip/CPW (BCMC) transition. Then, to cancel the interferences from existed wireless local-area network (WLAN) signals (i.e., 5.2 and 5.8 GHz), two pairs of embedded CPW resonators are employed. To verify the mechanisms mentioned above, an UWB power divider with dual-notched bands is implemented and fabricated. The measurement exhibits dual-notched bands with center frequencies of 5.28 and 5.86 GHz, which has merits of 10-dB notched FBW of 1.5% and 0.68%, respectively.
{"title":"Ultra-wideband (UWB) Wilkinson power divider with ultra-narrow dual-notched bands using embedded CPW resonators","authors":"Jie Zhou, H. Qian, Darong Huang, Xun Luo","doi":"10.1109/MWSYM.2017.8058583","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058583","url":null,"abstract":"In this paper, an ultra-wideband (UWB) Wilkinson power divider with ultra-narrow dual-notched bands is proposed. The multi-mode UWB characteristic is achieved using stepped-impedance open-circuited stub (SIOS) and broadside-coupled microstrip/CPW (BCMC) transition. Then, to cancel the interferences from existed wireless local-area network (WLAN) signals (i.e., 5.2 and 5.8 GHz), two pairs of embedded CPW resonators are employed. To verify the mechanisms mentioned above, an UWB power divider with dual-notched bands is implemented and fabricated. The measurement exhibits dual-notched bands with center frequencies of 5.28 and 5.86 GHz, which has merits of 10-dB notched FBW of 1.5% and 0.68%, respectively.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87010936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058585
Kyle D. Holzer, J. Walling
A 6-way planar ring for combining/dividing signals is presented in this paper. Conventional planar power combining/dividing structures use derivatives of the Wilkinson combiner in a ladder like structure, or radial combiners. The ring combiner can be made smaller, provide higher port isolation, improved harmonic suppression and a single isolation port (e.g., delta output port), allowing energy harvesting in outphasing applications. The presented ring combiner achieves a measured insertion loss of < 1dB from 5.5–5.8 GHz, while achieving > 25 dB isolation. The isolation notch is tunable by adjusting a static phase offset between the inputs. When linearly combining six, 26 dBm amplifiers, measurement results show 31dBm output. A 5-MHz, 64QAM LTE up-link signal is amplified without DPD and achieves an average out-put power of 24.1 dBm with an ACLR of >35 dBc. The power handling capability of the ring is only limited by the trace width and dielectric material, hence higher powers are achieveable.
{"title":"A 6-way ring combiner/divider","authors":"Kyle D. Holzer, J. Walling","doi":"10.1109/MWSYM.2017.8058585","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058585","url":null,"abstract":"A 6-way planar ring for combining/dividing signals is presented in this paper. Conventional planar power combining/dividing structures use derivatives of the Wilkinson combiner in a ladder like structure, or radial combiners. The ring combiner can be made smaller, provide higher port isolation, improved harmonic suppression and a single isolation port (e.g., delta output port), allowing energy harvesting in outphasing applications. The presented ring combiner achieves a measured insertion loss of < 1dB from 5.5–5.8 GHz, while achieving > 25 dB isolation. The isolation notch is tunable by adjusting a static phase offset between the inputs. When linearly combining six, 26 dBm amplifiers, measurement results show 31dBm output. A 5-MHz, 64QAM LTE up-link signal is amplified without DPD and achieves an average out-put power of 24.1 dBm with an ACLR of >35 dBc. The power handling capability of the ring is only limited by the trace width and dielectric material, hence higher powers are achieveable.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88053067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8059106
Brandon Arakawa, Liuqing Gao, Yansong Yang, Junfeng Guan, A. Gao, Ruochen Lu, S. Gong
This paper reports a 2.48 GHz tri-coil and rectifier design implemented in a system that demonstrates simultaneous wireless power transfer and communication to a 0.1 mm by 0.1 mm coil. The tri-coil link and rectifier successfully rectified and demodulated a 20 dBm amplitude-shift keyed (ASK) RF signal modulated at a rate of 1 Mb/s. Additionally, a 5.7 GHz tri-coil link was fabricated to validate the frequency scalability of this technology platform for other unlicensed bands and was measured in a customized experimental testbed to account for the effects of lateral misalignment between coils. The 5.7 GHz tri-coil design had a measured peak RF power transfer efficiency of −29 dB with a vertical separation of 1 mm, which is ten times the load coil diameter.
{"title":"Simultaneous wireless power transfer and communication to chip-scale devices","authors":"Brandon Arakawa, Liuqing Gao, Yansong Yang, Junfeng Guan, A. Gao, Ruochen Lu, S. Gong","doi":"10.1109/MWSYM.2017.8059106","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059106","url":null,"abstract":"This paper reports a 2.48 GHz tri-coil and rectifier design implemented in a system that demonstrates simultaneous wireless power transfer and communication to a 0.1 mm by 0.1 mm coil. The tri-coil link and rectifier successfully rectified and demodulated a 20 dBm amplitude-shift keyed (ASK) RF signal modulated at a rate of 1 Mb/s. Additionally, a 5.7 GHz tri-coil link was fabricated to validate the frequency scalability of this technology platform for other unlicensed bands and was measured in a customized experimental testbed to account for the effects of lateral misalignment between coils. The 5.7 GHz tri-coil design had a measured peak RF power transfer efficiency of −29 dB with a vertical separation of 1 mm, which is ten times the load coil diameter.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75207939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8059040
D. Martínez, F. Seyfert, M. Olivi, S. Bila, F. Torrès, J. Sence
The aim of this paper is to develop an exact synthesis technique for matching filters in connection with the use of single band antennas. A certified algorithm based on Youla's matching theory and convex optimization is presented. A practical example is considered with the synthesis of a matching filter in SIW technology used behind a microstrip patch antenna at 1.5 Ghz.
{"title":"Synthesis method for matching filters","authors":"D. Martínez, F. Seyfert, M. Olivi, S. Bila, F. Torrès, J. Sence","doi":"10.1109/MWSYM.2017.8059040","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8059040","url":null,"abstract":"The aim of this paper is to develop an exact synthesis technique for matching filters in connection with the use of single band antennas. A certified algorithm based on Youla's matching theory and convex optimization is presented. A practical example is considered with the synthesis of a matching filter in SIW technology used behind a microstrip patch antenna at 1.5 Ghz.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73549499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：