Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058576
D. Srinivasan, C. Sheldon, M. Bray
The telecommunications systems for two NASA deep-space missions to Jupiter's moon Europa are presented. One mission, Europa Clipper, is a Jovian orbiter with multiple Europa flybys; the other mission, Europa Lander, includes a Carrier and Relay Spacecraft (CRS), Deorbit Stage, Descent Stage (DS), and a Lander. Both missions are designed to communicate to Earth via the NASA Deep Space Network (DSN) and other ground stations. For Lander communications, both the CRS and Europa Clipper spacecraft are equipped with store-and-forward relay communication capability. The heart of each spacecraft's telecommunications system is the high-TRL Johns Hopkins University/Applied Physics Laboratory Frontier Radio, based on the Solar Probe Plus design. Other key telecommunnications hardware developments across the two missions include a 3-m dualband (X/Ka) high gain antenna (HGA), a GaN-based solid state power amplifier (SSPA) and slot-array HGA to enable the Lander communication system. All components must operate in a high-radiation environment and meet planetary protection requirements.
{"title":"Telecommunications systems for the NASA Europa missions","authors":"D. Srinivasan, C. Sheldon, M. Bray","doi":"10.1109/MWSYM.2017.8058576","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058576","url":null,"abstract":"The telecommunications systems for two NASA deep-space missions to Jupiter's moon Europa are presented. One mission, Europa Clipper, is a Jovian orbiter with multiple Europa flybys; the other mission, Europa Lander, includes a Carrier and Relay Spacecraft (CRS), Deorbit Stage, Descent Stage (DS), and a Lander. Both missions are designed to communicate to Earth via the NASA Deep Space Network (DSN) and other ground stations. For Lander communications, both the CRS and Europa Clipper spacecraft are equipped with store-and-forward relay communication capability. The heart of each spacecraft's telecommunications system is the high-TRL Johns Hopkins University/Applied Physics Laboratory Frontier Radio, based on the Solar Probe Plus design. Other key telecommunnications hardware developments across the two missions include a 3-m dualband (X/Ka) high gain antenna (HGA), a GaN-based solid state power amplifier (SSPA) and slot-array HGA to enable the Lander communication system. All components must operate in a high-radiation environment and meet planetary protection requirements.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"3 1","pages":"394-397"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91108952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058452
E. Ture, P. Brückner, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, O. Ambacher
First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device- and circuit-level performances over conventional GaN HEMTs are proven to be empowered through implementation of the novel Tri-gate topology which exhibits a 3-dimensional gate profile. The measurements of the fabricated MMIC yield up to 30.6 dBm (1.15 W) of output power in the frequency range of 86–94 GHz with 8% of power-added-efficiency (PAE) and more than 12 dB of transducer power gain. The achieved results demonstrate the promising potential of Tri-gate GaN technology towards high-performance millimeter-wave PA designs.
{"title":"First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power","authors":"E. Ture, P. Brückner, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, O. Ambacher","doi":"10.1109/MWSYM.2017.8058452","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058452","url":null,"abstract":"First-ever realization of a W-band power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) utilizing GaN-based Tri-gate high-electron-mobility transistors (HEMTs) is presented in this paper. Superior device- and circuit-level performances over conventional GaN HEMTs are proven to be empowered through implementation of the novel Tri-gate topology which exhibits a 3-dimensional gate profile. The measurements of the fabricated MMIC yield up to 30.6 dBm (1.15 W) of output power in the frequency range of 86–94 GHz with 8% of power-added-efficiency (PAE) and more than 12 dB of transducer power gain. The achieved results demonstrate the promising potential of Tri-gate GaN technology towards high-performance millimeter-wave PA designs.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"84 1","pages":"35-37"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76958277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.1109/MWSYM.2017.8058659
Yanghyo Kim, A. Tang, K. Liou, T. Painter, Mau-Chung Frank Chang
This paper presents a Ku-band (14–16 GHz) CMOS frequency modulated continuous-wave (FMCW) radar transceiver developed to measure snow depth for water management purposes and to aid in retrieval of snow water equivalent (SWE). An on-chip direct digital frequency synthesizer (DDFS) and digital-to-analog converter (DAC) digitally generates the chirping waveform which then drives a ring oscillator based Ku-Band phase-locked loop (PLL) to provide the final Ku-band FMCW signal. Employing a ring oscillator as oppose to a tuned inductor based oscillator (LC-VCO) allows the radar to achieve wider chirp bandwidth resulting in a higher axial resolution (7.5cm) which is needed to accurately quantify the snowpack profile. The demonstrated radar chip is fabricated in a 65nm CMOS process, and it consumes 250mW of power under 1.1V supply, making its payload requirements suitable for observations from a small UAV.
{"title":"A Ku-band CMOS FMCW radar transceiver with ring oscillator based waveform generation for snowpack remote sensing","authors":"Yanghyo Kim, A. Tang, K. Liou, T. Painter, Mau-Chung Frank Chang","doi":"10.1109/MWSYM.2017.8058659","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058659","url":null,"abstract":"This paper presents a Ku-band (14–16 GHz) CMOS frequency modulated continuous-wave (FMCW) radar transceiver developed to measure snow depth for water management purposes and to aid in retrieval of snow water equivalent (SWE). An on-chip direct digital frequency synthesizer (DDFS) and digital-to-analog converter (DAC) digitally generates the chirping waveform which then drives a ring oscillator based Ku-Band phase-locked loop (PLL) to provide the final Ku-band FMCW signal. Employing a ring oscillator as oppose to a tuned inductor based oscillator (LC-VCO) allows the radar to achieve wider chirp bandwidth resulting in a higher axial resolution (7.5cm) which is needed to accurately quantify the snowpack profile. The demonstrated radar chip is fabricated in a 65nm CMOS process, and it consumes 250mW of power under 1.1V supply, making its payload requirements suitable for observations from a small UAV.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"31 1","pages":"64-66"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84728624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058660
Ronald Nissel, E. Zöchmann, M. Lerch, S. Caban, M. Rupp
A key enabler for high data rates in future wireless systems will be the usage of millimeter Waves (mmWaves). Furthermore, Filter Bank Multi-Carrier (FBMC) with its good spectral properties has also been considered as a possible future transmission technique. However, many authors claim that multiple antennas and low-latency transmissions, two of the key requirements in 5G, cannot be efficiently supported by FBMC. This is not true in general, as we will show in this paper. We investigate FBMC transmissions over real world channels at 60 GHz and show that Alamouti's space time block code works perfectly fine once we spread (code) symbols in time. Although it is true that spreading increases the transmission time, the overall transmission time is still very low due to the high subcarrier spacing employed in mmWaves. Therefore, coded FBMC in combination with mmWaves enables high spectral efficiency, low-latency and allows the straightforward usage of multiple antennas.
{"title":"Low-latency MISO FBMC-OQAM: It works for millimeter waves!","authors":"Ronald Nissel, E. Zöchmann, M. Lerch, S. Caban, M. Rupp","doi":"10.1109/MWSYM.2017.8058660","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058660","url":null,"abstract":"A key enabler for high data rates in future wireless systems will be the usage of millimeter Waves (mmWaves). Furthermore, Filter Bank Multi-Carrier (FBMC) with its good spectral properties has also been considered as a possible future transmission technique. However, many authors claim that multiple antennas and low-latency transmissions, two of the key requirements in 5G, cannot be efficiently supported by FBMC. This is not true in general, as we will show in this paper. We investigate FBMC transmissions over real world channels at 60 GHz and show that Alamouti's space time block code works perfectly fine once we spread (code) symbols in time. Although it is true that spreading increases the transmission time, the overall transmission time is still very low due to the high subcarrier spacing employed in mmWaves. Therefore, coded FBMC in combination with mmWaves enables high spectral efficiency, low-latency and allows the straightforward usage of multiple antennas.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"35 1","pages":"673-676"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73873612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058790
Xiaofan Chen, Wen-hua Chen, Qian Zhang, F. Ghannouchi, Zhenghe Feng
This paper presents a high-power Continuous-mode Doherty Power Amplifier (C-DPA) for base-station applications. By utilizing de-embedded models of active devices and allowing the two transistors modulate each other at harmonic frequencies, the proposed C-DPA exhibits improved power, efficiency and bandwidth. Based on the proposed technique, a demonstrating 200 Watt C-DPA was designed over 1.7–2.7 GHz band. According to the measured results, over the 1 GHz bandwidth, the designed DPA generates 52.7–54.3 dBm power at saturation and exhibits 40%-50.2% drain efficiency at −6dB power back-off (BO). To the best of the authors' knowledge, this is the state-of-the-art performance of high-power broadband DPAs for base-station applications. Furthermore, using a 10MHz, 7.5dB PAPR LTE signal, the fabricated DPA was measured and linearized over the full-band, verifying its ability of being linearized.
{"title":"A 200 watt broadband continuous-mode doherty power amplifier for base-station applications","authors":"Xiaofan Chen, Wen-hua Chen, Qian Zhang, F. Ghannouchi, Zhenghe Feng","doi":"10.1109/MWSYM.2017.8058790","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058790","url":null,"abstract":"This paper presents a high-power Continuous-mode Doherty Power Amplifier (C-DPA) for base-station applications. By utilizing de-embedded models of active devices and allowing the two transistors modulate each other at harmonic frequencies, the proposed C-DPA exhibits improved power, efficiency and bandwidth. Based on the proposed technique, a demonstrating 200 Watt C-DPA was designed over 1.7–2.7 GHz band. According to the measured results, over the 1 GHz bandwidth, the designed DPA generates 52.7–54.3 dBm power at saturation and exhibits 40%-50.2% drain efficiency at −6dB power back-off (BO). To the best of the authors' knowledge, this is the state-of-the-art performance of high-power broadband DPAs for base-station applications. Furthermore, using a 10MHz, 7.5dB PAPR LTE signal, the fabricated DPA was measured and linearized over the full-band, verifying its ability of being linearized.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"90 4 1","pages":"1110-1113"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75522580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058835
Hyunchul Chung, Q. Ma, M. Sayginer, Gabriel M. Rebeiz
This paper presents a single-chip 0.01–26 GHz reflectometer for two-port vector network analyzers (VNA). The reflectometer consists of a bridge coupler integrated together with two wideband heterodyne receivers. For wideband operation, a resistive bridge coupler is used with a directivity of 33 dB up to 26 GHz. Also, a high-linearity receiver channel is designed so as to accommodate 10 dBm of RF input power to the reflectometer. The SiGe chip is 1.8 mm2 and consumes 640 mW from a 3.3 V supply. The dynamic range of the reflectometer chip is 127±2 dB at 0.01–26 GHz with an IF resolution bandwidth (RBW) of 10 Hz. The chip is placed on a printed circuit board (PCB), and RF, LO and DC bias are connecterized. Measurements of several device-under-test units (DUTs) with a two-port 0.01–26 GHz VNA composed of two reflectometer chips shows excellent agreement with a commercial VNA, with a magnitude and phase difference of < 0.2 dB and < 2° respectively for Su. Two-port measurements also show an 821 dynamic range of 80 dB, limited by the measurement setup and not by the chip. To our best knowledge, this is the first demonstration of a VNA operating from 10 MHz to mm-wave frequencies with the capability of measuring −80 dB of S21 as well as minimal magnitude and phase difference compared to state-of-the-art VNA measurements.
{"title":"A 0.01–26 GHz single-chip SiGe reflectometer for two-port vector network analyzers","authors":"Hyunchul Chung, Q. Ma, M. Sayginer, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2017.8058835","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058835","url":null,"abstract":"This paper presents a single-chip 0.01–26 GHz reflectometer for two-port vector network analyzers (VNA). The reflectometer consists of a bridge coupler integrated together with two wideband heterodyne receivers. For wideband operation, a resistive bridge coupler is used with a directivity of 33 dB up to 26 GHz. Also, a high-linearity receiver channel is designed so as to accommodate 10 dBm of RF input power to the reflectometer. The SiGe chip is 1.8 mm2 and consumes 640 mW from a 3.3 V supply. The dynamic range of the reflectometer chip is 127±2 dB at 0.01–26 GHz with an IF resolution bandwidth (RBW) of 10 Hz. The chip is placed on a printed circuit board (PCB), and RF, LO and DC bias are connecterized. Measurements of several device-under-test units (DUTs) with a two-port 0.01–26 GHz VNA composed of two reflectometer chips shows excellent agreement with a commercial VNA, with a magnitude and phase difference of < 0.2 dB and < 2° respectively for Su. Two-port measurements also show an 821 dynamic range of 80 dB, limited by the measurement setup and not by the chip. To our best knowledge, this is the first demonstration of a VNA operating from 10 MHz to mm-wave frequencies with the capability of measuring −80 dB of S21 as well as minimal magnitude and phase difference compared to state-of-the-art VNA measurements.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"1259-1261"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74469864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058794
M. Darwish, A. Pham
We propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA's.
我们提出了一种扩展范围的Doherty功率放大器(DPA)，使用一种新的负载阻抗范围来实现9 db功率回退(PBO)的高效率。所提出的负载阻抗范围使辅助晶体管能够提供更大的电流，从而使对称器件可以用于DPA，并产生紧凑和低损耗的输出组合电路。已经开发了一个使用3.5 GHz氮化镓高电子迁移率晶体管(GaN hemt)的20瓦DPA来演示该概念。测量结果显示，在42.9 dBm饱和输出功率下，功率附加效率(PAE)为69%，在9 dB PBO下，PAE为55%，增益为12 dB。我们认为，我们提出的DPA在已报道的GaN DPA中具有最高的9 db PBO PAE，为55%。
{"title":"An extended symmetric doherty power amplifier with high efficiency over a wide power range","authors":"M. Darwish, A. Pham","doi":"10.1109/MWSYM.2017.8058794","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058794","url":null,"abstract":"We propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA's.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"148 1","pages":"1118-1121"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73230104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058662
R. Hadani, S. Rakib, A. Molisch, C. Ibars, A. Monk, M. Tsatsanis, J. Delfeld, A. Goldsmith, R. Calderbank
Due to the increased demand for data rate, flexibility, and reliability of 5G cellular systems, new modulation formats need to be considered. A recently proposed scheme, Orthogonal Time Frequency Space (OTFS), offers various advantages in particular in environments with high frequency dispersion. Such environments are encountered, e.g, in mm-wave systems, both due to the higher phase noise, and the larger Doppler spreads encountered there. The current paper provides a performance evaluation of OTFS at 5G mm-wave frequencies. Comparisons with OFDM modulation show that OTFS has lower BER than OFDM in a number of situations.
{"title":"Orthogonal Time Frequency Space (OTFS) modulation for millimeter-wave communications systems","authors":"R. Hadani, S. Rakib, A. Molisch, C. Ibars, A. Monk, M. Tsatsanis, J. Delfeld, A. Goldsmith, R. Calderbank","doi":"10.1109/MWSYM.2017.8058662","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058662","url":null,"abstract":"Due to the increased demand for data rate, flexibility, and reliability of 5G cellular systems, new modulation formats need to be considered. A recently proposed scheme, Orthogonal Time Frequency Space (OTFS), offers various advantages in particular in environments with high frequency dispersion. Such environments are encountered, e.g, in mm-wave systems, both due to the higher phase noise, and the larger Doppler spreads encountered there. The current paper provides a performance evaluation of OTFS at 5G mm-wave frequencies. Comparisons with OFDM modulation show that OTFS has lower BER than OFDM in a number of situations.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"4 1","pages":"681-683"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75315385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058787
C. Hillman, B. Ma, P. Stupar, Z. Griffith
A monolithic 3-bit phase shifter has been fabricated and demonstrates broadband and low loss performance from 220 GHz to 240 GHz. The phase shifter utilizes an ultra-low loss vanadium dioxide switch for phase state control. The design uses a low-pass π-filter networks as phase shift elements for 45, 90 and 180 degree bits. This phase shifter's mean insertion loss of 7.6 dB is 3dB lower than any other passive phase shifter we could identify in literature and comparable to the best active vector-sum devices. The RMS phase error is a competitive 6.8 degrees at 230GHz and averages only 8 dB over the band from 220 to 240 GHz. This phase shifter's complete circuit footprint is < 0.1mm2 easily fitting within (λ/2)2 ∼ 0.4 mm2 array spacing. A second topology was also demonstrated that consists of a one-port transmission line reflection phase shifter (TLPS) using a variable length, short-circuit terminated synthetic transmission line. This device demonstrates an average insertion loss of 5.2 dB and RMS phase error of 30 degrees. We can find no passive phase shifter with comparable performance or compactness to either of the devices presented here.
{"title":"VO2 switch based submillimeter-wave phase shifters","authors":"C. Hillman, B. Ma, P. Stupar, Z. Griffith","doi":"10.1109/MWSYM.2017.8058787","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058787","url":null,"abstract":"A monolithic 3-bit phase shifter has been fabricated and demonstrates broadband and low loss performance from 220 GHz to 240 GHz. The phase shifter utilizes an ultra-low loss vanadium dioxide switch for phase state control. The design uses a low-pass π-filter networks as phase shift elements for 45, 90 and 180 degree bits. This phase shifter's mean insertion loss of 7.6 dB is 3dB lower than any other passive phase shifter we could identify in literature and comparable to the best active vector-sum devices. The RMS phase error is a competitive 6.8 degrees at 230GHz and averages only 8 dB over the band from 220 to 240 GHz. This phase shifter's complete circuit footprint is < 0.1mm2 easily fitting within (λ/2)2 ∼ 0.4 mm2 array spacing. A second topology was also demonstrated that consists of a one-port transmission line reflection phase shifter (TLPS) using a variable length, short-circuit terminated synthetic transmission line. This device demonstrates an average insertion loss of 5.2 dB and RMS phase error of 30 degrees. We can find no passive phase shifter with comparable performance or compactness to either of the devices presented here.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"64 1","pages":"1098-1101"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74944062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/MWSYM.2017.8058965
J. Xia, A. Chung, S. Boumaiza
This paper presents the design of an efficient two-stage m illim eter-wave power amplifier (PA) using stacked field-effect transistors in 45nm silicon-on-insulator (SOI) CMOS technology. It highlights two major issues encountered when designing single-ended multistage PAs at millimeter frequencies (e.g., 60GHz), namely the significant source to ground parasitic inductance and the vulnerability to oscillation at low frequencies. The two-stage differential PA includes input, inter-stage and output matching networks implemented using RF transformers with a high coupling factor and reduced insertion losses. The PA demonstrator showed a 3-dB bandwidth equal to 12GHz (55–67GHz). The small signal gain, peak power added efficiency and peak output power were recorded as 14.5dB, 25% and 17.3dBm, respectively.
{"title":"A wideband millimeter-wave differential stacked-FET power amplifier with 17.3 dBm output power and 25% PAE in 45nm SOI CMOS","authors":"J. Xia, A. Chung, S. Boumaiza","doi":"10.1109/MWSYM.2017.8058965","DOIUrl":"https://doi.org/10.1109/MWSYM.2017.8058965","url":null,"abstract":"This paper presents the design of an efficient two-stage m illim eter-wave power amplifier (PA) using stacked field-effect transistors in 45nm silicon-on-insulator (SOI) CMOS technology. It highlights two major issues encountered when designing single-ended multistage PAs at millimeter frequencies (e.g., 60GHz), namely the significant source to ground parasitic inductance and the vulnerability to oscillation at low frequencies. The two-stage differential PA includes input, inter-stage and output matching networks implemented using RF transformers with a high coupling factor and reduced insertion losses. The PA demonstrator showed a 3-dB bandwidth equal to 12GHz (55–67GHz). The small signal gain, peak power added efficiency and peak output power were recorded as 14.5dB, 25% and 17.3dBm, respectively.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1691-1694"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76504411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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