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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)最新文献

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Low-k interconnect stack with multi-layer air gap and tri-metal-insulator-metal capacitors for 14nm high volume manufacturing 具有多层气隙和三金属绝缘体-金属电容器的低k互连堆栈,适用于14nm大批量生产
K. Fischer, M. Agostinelli, C. Allen, D. Bahr, M. Bost, P. Charvat, V. Chikarmane, Q. Fu, C. Ganpule, M. Haran, M. Heckscher, H. Hiramatsu, E. Hwang, P. Jain, I. Jin, R. Kasim, S. Kosaraju, K. Lee, H. Liu, R. McFadden, S. Nigam, R. Patel, C. Pelto, P. Plekhanov, M. Prince, C. Puls, S. Rajamani, D. Rao, P. Reese, A. Rosenbaum, S. Sivakumar, B. Song, M. Uncuer, S. Williams, M. Yang, P. Yashar, S. Natarajan
We describe here Intel's 14nm high-performance logic technology interconnects and back end stack featuring 13 metal layers and a tri-metal laminated metal-insulator-metal (MIM) capacitor. For the first time on a logic product in high volume, multiple layers (M4 and M6) incorporate an air gap integration scheme to deliver up to 17% RC benefit. Pitch Division patterning is introduced to deliver high yield capable interconnect layers with a minimum pitch of 52nm.
我们在这里描述英特尔的14nm高性能逻辑技术互连和后端堆栈,具有13个金属层和一个三金属层压金属-绝缘体-金属(MIM)电容器。这是第一次在大批量的逻辑产品上,多层(M4和M6)采用气隙集成方案,可提供高达17%的RC效益。引入间距分割模式以提供具有高良率的互连层,最小间距为52nm。
{"title":"Low-k interconnect stack with multi-layer air gap and tri-metal-insulator-metal capacitors for 14nm high volume manufacturing","authors":"K. Fischer, M. Agostinelli, C. Allen, D. Bahr, M. Bost, P. Charvat, V. Chikarmane, Q. Fu, C. Ganpule, M. Haran, M. Heckscher, H. Hiramatsu, E. Hwang, P. Jain, I. Jin, R. Kasim, S. Kosaraju, K. Lee, H. Liu, R. McFadden, S. Nigam, R. Patel, C. Pelto, P. Plekhanov, M. Prince, C. Puls, S. Rajamani, D. Rao, P. Reese, A. Rosenbaum, S. Sivakumar, B. Song, M. Uncuer, S. Williams, M. Yang, P. Yashar, S. Natarajan","doi":"10.1109/IITC-MAM.2015.7325600","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325600","url":null,"abstract":"We describe here Intel's 14nm high-performance logic technology interconnects and back end stack featuring 13 metal layers and a tri-metal laminated metal-insulator-metal (MIM) capacitor. For the first time on a logic product in high volume, multiple layers (M4 and M6) incorporate an air gap integration scheme to deliver up to 17% RC benefit. Pitch Division patterning is introduced to deliver high yield capable interconnect layers with a minimum pitch of 52nm.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"10 1","pages":"5-8"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87914554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
Fabrication, assembly, failure estimations of for ultra-thin chips stacking by using pre-molding technology 采用预成型技术的超薄芯片堆垛制造、装配及失效评估
Chang-Chun Lee, Yu-Min Lin, Yan-Yu Liou, C. Zhan, Tao-Chih Chang
To overcome the severe challenges of achieving an extra-thin thickness down to 10 μm for chip stacking of 3D-IC module such as the mechanical damages appear at chip grinding, subsequent steps of wafer handling, and robust assembly, a novel pre-molding technology applied to assembled stacked module prior to chip thinning procedure is presented in this study. Packaging vehicle is fabricated to demonstrate the feasibility of proposed approach. Moreover, failure estimation and mechanical reliability are also implemented by using a 3D nonlinear finite element analysis.
为了克服3D-IC模块在实现10 μm的超薄厚度时所面临的严峻挑战,如芯片研磨、晶圆处理后续步骤和坚固组装时出现的机械损伤,本研究提出了一种新的预成型技术,应用于芯片减薄过程之前的组装堆叠模块。以整车为例验证了该方法的可行性。此外,还采用三维非线性有限元分析实现了故障估计和机械可靠性。
{"title":"Fabrication, assembly, failure estimations of for ultra-thin chips stacking by using pre-molding technology","authors":"Chang-Chun Lee, Yu-Min Lin, Yan-Yu Liou, C. Zhan, Tao-Chih Chang","doi":"10.1109/IITC-MAM.2015.7325659","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325659","url":null,"abstract":"To overcome the severe challenges of achieving an extra-thin thickness down to 10 μm for chip stacking of 3D-IC module such as the mechanical damages appear at chip grinding, subsequent steps of wafer handling, and robust assembly, a novel pre-molding technology applied to assembled stacked module prior to chip thinning procedure is presented in this study. Packaging vehicle is fabricated to demonstrate the feasibility of proposed approach. Moreover, failure estimation and mechanical reliability are also implemented by using a 3D nonlinear finite element analysis.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"74 1","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89205174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)
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