Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325632
E. Herth, R. Zeggari, J. Rauch, F. Remy-Martin, W. Boireau
The present study demonstrates that thin layers of amorphous silicon oxide (SiOx) grown by inductively-coupled plasma enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures can be successfully combined with biosensors. In particular, gold-amorphous silica (Au/SiOx) interfaces were investigated for their potential applications as a low-cost Surface Plasmon Resonance (SPR) sensor chip. We report here on the fabrication and characterization of stable and good reliabilities of SiOx deposited at 80°C at different pressures. The refractive index (n) of SiOx varied from 1.456 to 1.462. The results show that the sensitivity and minimum light reflectivity at the resonance angle is extremely sensitive to any changes in the index of refraction and any changes in optical thickness.
{"title":"Thin amorphous silicon oxide ICPECVD layer on gold surface for surface plasmon resonance measurements","authors":"E. Herth, R. Zeggari, J. Rauch, F. Remy-Martin, W. Boireau","doi":"10.1109/IITC-MAM.2015.7325632","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325632","url":null,"abstract":"The present study demonstrates that thin layers of amorphous silicon oxide (SiOx) grown by inductively-coupled plasma enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures can be successfully combined with biosensors. In particular, gold-amorphous silica (Au/SiOx) interfaces were investigated for their potential applications as a low-cost Surface Plasmon Resonance (SPR) sensor chip. We report here on the fabrication and characterization of stable and good reliabilities of SiOx deposited at 80°C at different pressures. The refractive index (n) of SiOx varied from 1.456 to 1.462. The results show that the sensitivity and minimum light reflectivity at the resonance angle is extremely sensitive to any changes in the index of refraction and any changes in optical thickness.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"71 1","pages":"83-86"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77779418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325627
S. Zhiou, P. Rodriguez, P. Gergaud, F. Nemouchi, T. Thanh
We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.
{"title":"Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping","authors":"S. Zhiou, P. Rodriguez, P. Gergaud, F. Nemouchi, T. Thanh","doi":"10.1109/IITC-MAM.2015.7325627","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325627","url":null,"abstract":"We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"6 1","pages":"63-66"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84787084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325637
Xu Wang, L. Cao, X. Qu
In this work, an alkaline electrolyte containing copper sulfate and ethanediamine (En) as ligand was used for direct Cu electrodeposition on novel alloy barrier CoxMoy films and comparison was made between alkaline bath and H2SO4-CuSO4 acidic bath. In alkaline bath, the nucleation density of Cu on Co1Mo3 is much higher than that in acidic bath. It is found that the Cu island density increases and the surface roughness decreases with the higher content of Co in CoxMoy films. Results show that adhesion between Cu and Co is better than that between Cu and Mo, which affects initial nucleation behavior and surface roughness of the deposited Cu films. Uniform and conformal copper was successfully electroplated on 5 nm Co1Mo3 layers covered patterned wafers in alkaline bath without additives.
{"title":"Direct copper electrodeposition on novel CoMo diffusion barrier","authors":"Xu Wang, L. Cao, X. Qu","doi":"10.1109/IITC-MAM.2015.7325637","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325637","url":null,"abstract":"In this work, an alkaline electrolyte containing copper sulfate and ethanediamine (En) as ligand was used for direct Cu electrodeposition on novel alloy barrier CoxMoy films and comparison was made between alkaline bath and H2SO4-CuSO4 acidic bath. In alkaline bath, the nucleation density of Cu on Co1Mo3 is much higher than that in acidic bath. It is found that the Cu island density increases and the surface roughness decreases with the higher content of Co in CoxMoy films. Results show that adhesion between Cu and Co is better than that between Cu and Mo, which affects initial nucleation behavior and surface roughness of the deposited Cu films. Uniform and conformal copper was successfully electroplated on 5 nm Co1Mo3 layers covered patterned wafers in alkaline bath without additives.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"24 1","pages":"127-130"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83296991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325642
M. Krishtab, K. Vanstreels, S. De Gendt, M. Baklanov
In this study we demonstrate an approach for reduction of plasma induced damage in spin-on organosilica low-k dielectric films. These films are deposited from sols containing amphiphilic surfactant molecules as sacrificial phase. Both bulk material hydrophilization and surface roughening caused by etching plasma were significantly lowered. This is related to controlled partial removal of templating organic molecules at the material preparation stage. Short UV-assisted curing with broadband UV-light source (λ > 200 nm) was found to be an efficient strategy for the template residue removal applied after completing the etching process. Three steps of the proposed approach, including initial material pre-formation, etching and cleaning of pore walls from template residue, are investigated on blanket films.
{"title":"Post-etch template removal strategy for reduction of plasma induced damage in spin-on OSG low-k dielectrics","authors":"M. Krishtab, K. Vanstreels, S. De Gendt, M. Baklanov","doi":"10.1109/IITC-MAM.2015.7325642","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325642","url":null,"abstract":"In this study we demonstrate an approach for reduction of plasma induced damage in spin-on organosilica low-k dielectric films. These films are deposited from sols containing amphiphilic surfactant molecules as sacrificial phase. Both bulk material hydrophilization and surface roughening caused by etching plasma were significantly lowered. This is related to controlled partial removal of templating organic molecules at the material preparation stage. Short UV-assisted curing with broadband UV-light source (λ > 200 nm) was found to be an efficient strategy for the template residue removal applied after completing the etching process. Three steps of the proposed approach, including initial material pre-formation, etching and cleaning of pore walls from template residue, are investigated on blanket films.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"5 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83347830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325622
S. Spiga
Summary form only given. Resistive switching (RS) phenomena in oxides have received a large interest for ultra-scaled and high-density non-volatile memories, and many prototypes have been proposed at industrial level. Recently, RS have been also exploited for new type of applications, such as reconfigurable logic and synaptic electronics. In the latter field, the interest is towards RS devices which can be used to fabricate artificial synapses, able to emulate the synaptic functions of biological synapses, and to be integrated with standard CMOS circuits to build neuromorphic systems. These RS devices, also named memristive systems, are of particular interest due to their simple two terminal structure, low power operation, high-scalability, low thermal budget fabrication and, depending on material system, easy integration into CMOS based platform. This talk will first introduce the current state of the art and materials systems investigated for non-volatile memories as well as synaptic devices for neuromorphic circuits, highlighting the materials/device differences versus target application. Then, the talk will present our recent advancements on HfO2 and Al-doped-HfO2 based RS devices. The oxide layers (binary and doped oxides) are deposited by atomic layer deposition and the resistive switching properties are analysed from micro- to nanoscale. The fabrication of high-density and nanoscale HfOx-based memristive devices is achieved by block-copolymer lithography. Furthermore, in view of application of these devices as synaptic elements, the long term plasticity, as potentiation and depression typical of biological synapses, are characterized by various pulsed operation schemes. Special emphasis is given to programming algorithms based on a train of identical pulses. It will be shown that a careful choice of the pulse amplitude/pulse width combination is fundamental to achieve an analogue modulation of the device.
{"title":"Resistive switching in oxides for nonvolatile memories and neuromorphic computing","authors":"S. Spiga","doi":"10.1109/IITC-MAM.2015.7325622","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325622","url":null,"abstract":"Summary form only given. Resistive switching (RS) phenomena in oxides have received a large interest for ultra-scaled and high-density non-volatile memories, and many prototypes have been proposed at industrial level. Recently, RS have been also exploited for new type of applications, such as reconfigurable logic and synaptic electronics. In the latter field, the interest is towards RS devices which can be used to fabricate artificial synapses, able to emulate the synaptic functions of biological synapses, and to be integrated with standard CMOS circuits to build neuromorphic systems. These RS devices, also named memristive systems, are of particular interest due to their simple two terminal structure, low power operation, high-scalability, low thermal budget fabrication and, depending on material system, easy integration into CMOS based platform. This talk will first introduce the current state of the art and materials systems investigated for non-volatile memories as well as synaptic devices for neuromorphic circuits, highlighting the materials/device differences versus target application. Then, the talk will present our recent advancements on HfO2 and Al-doped-HfO2 based RS devices. The oxide layers (binary and doped oxides) are deposited by atomic layer deposition and the resistive switching properties are analysed from micro- to nanoscale. The fabrication of high-density and nanoscale HfOx-based memristive devices is achieved by block-copolymer lithography. Furthermore, in view of application of these devices as synaptic elements, the long term plasticity, as potentiation and depression typical of biological synapses, are characterized by various pulsed operation schemes. Special emphasis is given to programming algorithms based on a train of identical pulses. It will be shown that a careful choice of the pulse amplitude/pulse width combination is fundamental to achieve an analogue modulation of the device.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"15 1","pages":"213-214"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80755868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325646
Kevin L. Lin, J. Bielefeld, J. Chawla, C. Carver, R. Chebiam, J. Clarke, Jacob Faber, M. Harmes, T. Indukuri, C. Jezewski, R. Kasim, M. Kobrinsky, N. Kabir, B. Krist, Narendra V. Lakamraju, H. Lang, E. Mays, A. Myers, J. Plombon, K. Singh, J. Torres, H. Yoo
Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal thin-film barriers. Etch stop planar capacitors in turn can test multi-layer etch stops, exposing differences between leaky and good etch stop films. Fillable planar capacitors are also fabricated and results presented for that class of fill materials.
{"title":"Demonstration of new planar capacitor (PCAP) vehicles to evaluate dielectrics and metal barrier thin films","authors":"Kevin L. Lin, J. Bielefeld, J. Chawla, C. Carver, R. Chebiam, J. Clarke, Jacob Faber, M. Harmes, T. Indukuri, C. Jezewski, R. Kasim, M. Kobrinsky, N. Kabir, B. Krist, Narendra V. Lakamraju, H. Lang, E. Mays, A. Myers, J. Plombon, K. Singh, J. Torres, H. Yoo","doi":"10.1109/IITC-MAM.2015.7325646","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325646","url":null,"abstract":"Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal thin-film barriers. Etch stop planar capacitors in turn can test multi-layer etch stops, exposing differences between leaky and good etch stop films. Fillable planar capacitors are also fabricated and results presented for that class of fill materials.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"80 1","pages":"139-142"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78630032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325585
K. Croes, C. Wu, D. Kocaay, J. Bommels, Z. Tokei
We review our current understanding of the degradation mechanisms in scaled interconnects. Concerns on the applicability of today's reliability evaluation methods are expressed. Regarding electromigration (EM), both scaling line dimensions and using mechanically weaker intermetal dielectrics (IMDs) have a negative impact on its performance, where remedial measures to overcome this downward trend are discussed. With aggressively scaled barriers, we also show that EM test methodology adaptation towards constant voltage testing might be needed. Regarding dielectric reliability, we quantify the reliability degradation induced by both k-value and spacing reduction. Also, we review the current understanding on lifetime models used for predicting high field data to lower fields. Both for copper and dielectric reliability, we highlight that the development of ways to account for process variability during lifetime prediction will become key in the future.
{"title":"Reliability mechanisms and lifetime extrapolation methods for scaled interconnect technologies","authors":"K. Croes, C. Wu, D. Kocaay, J. Bommels, Z. Tokei","doi":"10.1109/IITC-MAM.2015.7325585","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325585","url":null,"abstract":"We review our current understanding of the degradation mechanisms in scaled interconnects. Concerns on the applicability of today's reliability evaluation methods are expressed. Regarding electromigration (EM), both scaling line dimensions and using mechanically weaker intermetal dielectrics (IMDs) have a negative impact on its performance, where remedial measures to overcome this downward trend are discussed. With aggressively scaled barriers, we also show that EM test methodology adaptation towards constant voltage testing might be needed. Regarding dielectric reliability, we quantify the reliability degradation induced by both k-value and spacing reduction. Also, we review the current understanding on lifetime models used for predicting high field data to lower fields. Both for copper and dielectric reliability, we highlight that the development of ways to account for process variability during lifetime prediction will become key in the future.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"40 1","pages":"295-298"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74135410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325643
P. Rodriguez, L. Toselli, E. Ghegin, F. Nemouchi, N. Rochat, E. Martinez
In this work we introduce the use of physical plasmas (e.g. Ar- and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides.
{"title":"In situ cleaning/passivation of surfaces for contact technology on III-V materials","authors":"P. Rodriguez, L. Toselli, E. Ghegin, F. Nemouchi, N. Rochat, E. Martinez","doi":"10.1109/IITC-MAM.2015.7325643","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325643","url":null,"abstract":"In this work we introduce the use of physical plasmas (e.g. Ar- and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"152 1","pages":"107-110"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77490935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325595
J. Roberts, A. Kaushik, J. Clarke
Resistivity data are presented for lines from 22 nm to 108 nm wide measured at room temperature and at 4.6 K. We also present numerical simulation data for 2-10 nm features. The experimental data are fit with standard Mayadas-Shatzkes and Fuchs-Sondheimer models which indicate that electron scattering from surfaces and from grains are the main contributors to resistivity for small features. The simulation data show that surface scattering dominates resistivity at smaller dimensions. This suggests that improvements in resistivity should focus on minimizing the impact of surfaces and grains, which has implications for interconnect material selection.
{"title":"Resistivity of sub-30 nm copper lines","authors":"J. Roberts, A. Kaushik, J. Clarke","doi":"10.1109/IITC-MAM.2015.7325595","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325595","url":null,"abstract":"Resistivity data are presented for lines from 22 nm to 108 nm wide measured at room temperature and at 4.6 K. We also present numerical simulation data for 2-10 nm features. The experimental data are fit with standard Mayadas-Shatzkes and Fuchs-Sondheimer models which indicate that electron scattering from surfaces and from grains are the main contributors to resistivity for small features. The simulation data show that surface scattering dominates resistivity at smaller dimensions. This suggests that improvements in resistivity should focus on minimizing the impact of surfaces and grains, which has implications for interconnect material selection.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"3 3","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91499163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-18DOI: 10.1109/IITC-MAM.2015.7325640
M. Franz, R. Ecke, C. Kaufmann, J. Kriz, S. Schulz
In this work, we present the recent work on self-forming barriers. Focus on investigation laid on the barrier formation and its stability against copper diffusion. The investigated alloys were Cu(Mn), Cu(Ti) and Cu(Zr) respectively. It can be shown that these alloys are capable to form an enrichment layer on the SiO2 interface. Here the substrate influences mainly the thickness of the generated barrier. Electrical measurements show the barrier stability against copper diffusion. Mn and Ti are promising elements as barrier materials.
{"title":"Investigation of barrier formation and stability of self-forming barriers with CuMn, CuTi and CuZr alloys","authors":"M. Franz, R. Ecke, C. Kaufmann, J. Kriz, S. Schulz","doi":"10.1109/IITC-MAM.2015.7325640","DOIUrl":"https://doi.org/10.1109/IITC-MAM.2015.7325640","url":null,"abstract":"In this work, we present the recent work on self-forming barriers. Focus on investigation laid on the barrier formation and its stability against copper diffusion. The investigated alloys were Cu(Mn), Cu(Ti) and Cu(Zr) respectively. It can be shown that these alloys are capable to form an enrichment layer on the SiO2 interface. Here the substrate influences mainly the thickness of the generated barrier. Electrical measurements show the barrier stability against copper diffusion. Mn and Ti are promising elements as barrier materials.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"64 1","pages":"95-98"},"PeriodicalIF":0.0,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91266585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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