Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925436
Priyaranga Koswatta, Z. Holman
Many have studied and reported properties of silicon heterojunctions solar cells in great detail, including open-circuit voltage and short-circuit current losses. However, little investigation has been dedicated to studying the series resistance contributions, especially at the maximum power point. Contact resistance between amorphous silicon and a transparent conductive oxide can have a significant contribution to series resistance, especially in silicon heterojunction solar cells. We propose the use of Kelvin cross bridge resistors to accurately measure the contact resistance between the doped amorphous silicon layer and the transparent conductive oxide layer typically found in a silicon heterojunction solar cell. This method allows an accurate measurement of the contact resistance without the interference of the sheet resistance of the highly resistive amorphous silicon layer.
{"title":"a-Si:H/TCO contact resistance measurement using a Kelvin cross bridge resistor","authors":"Priyaranga Koswatta, Z. Holman","doi":"10.1109/PVSC.2014.6925436","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925436","url":null,"abstract":"Many have studied and reported properties of silicon heterojunctions solar cells in great detail, including open-circuit voltage and short-circuit current losses. However, little investigation has been dedicated to studying the series resistance contributions, especially at the maximum power point. Contact resistance between amorphous silicon and a transparent conductive oxide can have a significant contribution to series resistance, especially in silicon heterojunction solar cells. We propose the use of Kelvin cross bridge resistors to accurately measure the contact resistance between the doped amorphous silicon layer and the transparent conductive oxide layer typically found in a silicon heterojunction solar cell. This method allows an accurate measurement of the contact resistance without the interference of the sheet resistance of the highly resistive amorphous silicon layer.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"104 1","pages":"2495-2498"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80661676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925358
Y. Li, B. F. Wang, Y.-H. Lee, C. Hsieh, H.-S. Wu, D. Huang
Accelerated degradation test by UV pulse laser and fluorescence tubes for ethylene vinyl acetate (EVA) used as encapsulation of PV-cells is compared. Samples of glass/EVA/glass are prepared and irradiated by a UV pulse laser at 355nm with a repetition rate of 10 Hz, 5 ns pulse width and 10 mJ pulse energy. Spot size is expanded to 1×1 cm2 and thus averaged energy density of 1kW/m2 is available. Induced fast change in yellowness index (ΔYi) is compared between UV pulse laser and conventional fluorescence tubes. Our result shows ΔYi of 10 could be achieved in 20 ~30 hours while exposed EVA to a UV pulse laser. However, ΔYi is still less than 2 for the same sample exposed by fluorescence tubes (60°C, 40 W/m2) in a chamber over 600 hours. Both transmittance and Raman spectrum are also investigated. For samples aged by UV pulse laser, although more decay trend could be observed in transmittance spectrum, rare changes, including fluorescence background are measured by Raman spectroscopy. Our result shows essential difference of polymer degradation in EVA films after accelerated tests by two UV methods.
{"title":"A comparison of accelerated degradation test by a UV pulse laser and fluorescence tubes for EVA films","authors":"Y. Li, B. F. Wang, Y.-H. Lee, C. Hsieh, H.-S. Wu, D. Huang","doi":"10.1109/PVSC.2014.6925358","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925358","url":null,"abstract":"Accelerated degradation test by UV pulse laser and fluorescence tubes for ethylene vinyl acetate (EVA) used as encapsulation of PV-cells is compared. Samples of glass/EVA/glass are prepared and irradiated by a UV pulse laser at 355nm with a repetition rate of 10 Hz, 5 ns pulse width and 10 mJ pulse energy. Spot size is expanded to 1×1 cm2 and thus averaged energy density of 1kW/m2 is available. Induced fast change in yellowness index (ΔYi) is compared between UV pulse laser and conventional fluorescence tubes. Our result shows ΔYi of 10 could be achieved in 20 ~30 hours while exposed EVA to a UV pulse laser. However, ΔYi is still less than 2 for the same sample exposed by fluorescence tubes (60°C, 40 W/m2) in a chamber over 600 hours. Both transmittance and Raman spectrum are also investigated. For samples aged by UV pulse laser, although more decay trend could be observed in transmittance spectrum, rare changes, including fluorescence background are measured by Raman spectroscopy. Our result shows essential difference of polymer degradation in EVA films after accelerated tests by two UV methods.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"8 1","pages":"2188-2190"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86709288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925199
S. Gonzalez, J. Neely, M. Ropp
The high penetration of utility-interconnected photovoltaic systems is causing heightened concern over the effect that variable renewable generation will have on the electric power system (EPS). These concerns have initiated the need to amend the utility interconnection standard to allow functionalities, so-called advanced inverter functions, to minimize the negative impact these variable distributed energy resources may have on EPS voltage and frequency. Unfortunately, advanced functions, in particular volt-VAr, will result in non-unity power factor (PF) operation[3]. The increased phase current results in additional conduction losses and switching losses in the inverter power electronics. These power losses have a direct impact on real power delivered to the grid at the point of common coupling (PCC) and an impact on inverter service life. This report provides analysis, simulation, and experimental evidence to investigate the effect of advanced inverter functions on non-unity PF operation.
{"title":"Effect of non-unity power factor operation in photovoltaic inverters employing grid support functions","authors":"S. Gonzalez, J. Neely, M. Ropp","doi":"10.1109/PVSC.2014.6925199","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925199","url":null,"abstract":"The high penetration of utility-interconnected photovoltaic systems is causing heightened concern over the effect that variable renewable generation will have on the electric power system (EPS). These concerns have initiated the need to amend the utility interconnection standard to allow functionalities, so-called advanced inverter functions, to minimize the negative impact these variable distributed energy resources may have on EPS voltage and frequency. Unfortunately, advanced functions, in particular volt-VAr, will result in non-unity power factor (PF) operation[3]. The increased phase current results in additional conduction losses and switching losses in the inverter power electronics. These power losses have a direct impact on real power delivered to the grid at the point of common coupling (PCC) and an impact on inverter service life. This report provides analysis, simulation, and experimental evidence to investigate the effect of advanced inverter functions on non-unity PF operation.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"27 1","pages":"1498-1503"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85270409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925493
A. S. C. Cardoso Diniz, L. M. Machado Neto, Suellen C. S. Costa, Marcio E. M. de Souza, F. F. Souza, Wilton C. Padrão, Flavio M. C. Michel, O. M. Toledo, D. O. Filho
This paper presents the design and studies performed in the first-phase implementation of the R&D project D308, in partnership with Energetic Company of Minas Gerais (CEMIG-D). The objective of this project is to evaluate the benefits and limitations of using storage with a grid-connected PV system. Specifically to evaluate injecting the energy stored in batteries charge by the PV into the electric grid in order to flatten the peak of the load curve of a feeder system (with evening peak-electricity consumption experienced in this area). The PV/storage system is being installed in the football stadium Arena do Jacare, located in Sete Lagoas, Minas Gerais. Initial studies have been performed to define the characteristics of the PV array, including surveys of the region characteristics, and solar resource/ climate data. Additionally, the characteristics of the optimum PV generator configuration and module technology have been evaluated, taking into consideration the stadium's limited available area and defined orientation--and the major design criterion to eliminate any shadow projection on photovoltaic modules that could reduce its performance. With the initial design of the PV generator structure and geometry, the system was performance was simuulated under projected conditions. An innovative feature of this project is a bidirectional conversion and connection unit, which has the capacity to store the energy coming from the PV generator and/or the electrical network in a battery bank. The unit can deliver the energy to the grid (a feeder operated by CEMIG in our tests) at specific defined times-such as the peak time in this area between 18:30 and 20:30. At the conclusion of this protype project, a larger scale of the system (photovoltaic system connected to the network with storage) will be installed at GREEN-IPUC/PUCMinas, utilizing the lessons learned and experiences and the equipment developed at the Minas Gerais Arena do Jacare Stadium.
本文介绍了与米纳斯吉拉斯州能源公司(CEMIG-D)合作的研发项目D308第一阶段实施的设计和研究。该项目的目的是评估与并网光伏系统一起使用储能的好处和局限性。具体而言，评估将光伏发电充电电池中储存的能量注入电网，以使馈线系统负荷曲线的峰值变平(该地区经历了晚高峰用电)。光伏/存储系统将安装在米纳斯吉拉斯州Sete Lagoas的Arena do Jacare足球场。已经进行了初步研究，以确定光伏阵列的特征，包括区域特征调查和太阳能资源/气候数据。此外，考虑到体育场有限的可用面积和确定的朝向，以及消除光伏模块上任何可能降低其性能的阴影投影的主要设计标准，对最佳光伏发电机配置和模块技术的特征进行了评估。在对光伏发电系统结构和几何形状进行初步设计的基础上，对系统在规划工况下的性能进行了仿真。该项目的一个创新之处是双向转换和连接单元，它有能力将来自光伏发电机和/或电网的能量存储在电池组中。该单元可以在特定的定义时间将能量输送到电网(在我们的测试中由CEMIG操作的馈线)，例如该区域的高峰时间在18:30到20:30之间。在这个原型项目结束时，将利用在米纳斯吉拉斯州竞技场体育场开发的经验教训和设备，在GREEN-IPUC/PUCMinas安装更大规模的系统(光伏系统连接到带有存储的网络)。
{"title":"Development of a grid-connected photovoltaic-storage","authors":"A. S. C. Cardoso Diniz, L. M. Machado Neto, Suellen C. S. Costa, Marcio E. M. de Souza, F. F. Souza, Wilton C. Padrão, Flavio M. C. Michel, O. M. Toledo, D. O. Filho","doi":"10.1109/PVSC.2014.6925493","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925493","url":null,"abstract":"This paper presents the design and studies performed in the first-phase implementation of the R&D project D308, in partnership with Energetic Company of Minas Gerais (CEMIG-D). The objective of this project is to evaluate the benefits and limitations of using storage with a grid-connected PV system. Specifically to evaluate injecting the energy stored in batteries charge by the PV into the electric grid in order to flatten the peak of the load curve of a feeder system (with evening peak-electricity consumption experienced in this area). The PV/storage system is being installed in the football stadium Arena do Jacare, located in Sete Lagoas, Minas Gerais. Initial studies have been performed to define the characteristics of the PV array, including surveys of the region characteristics, and solar resource/ climate data. Additionally, the characteristics of the optimum PV generator configuration and module technology have been evaluated, taking into consideration the stadium's limited available area and defined orientation--and the major design criterion to eliminate any shadow projection on photovoltaic modules that could reduce its performance. With the initial design of the PV generator structure and geometry, the system was performance was simuulated under projected conditions. An innovative feature of this project is a bidirectional conversion and connection unit, which has the capacity to store the energy coming from the PV generator and/or the electrical network in a battery bank. The unit can deliver the energy to the grid (a feeder operated by CEMIG in our tests) at specific defined times-such as the peak time in this area between 18:30 and 20:30. At the conclusion of this protype project, a larger scale of the system (photovoltaic system connected to the network with storage) will be installed at GREEN-IPUC/PUCMinas, utilizing the lessons learned and experiences and the equipment developed at the Minas Gerais Arena do Jacare Stadium.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"67 1","pages":"2728-2733"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86595858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925414
Tao Song, A. Kanevce, J. Sites
Traditional polycrystalline CdTe solar cell performance is limited by recombination at the grain boundaries, low carrier density (p), compensation from impurities, and a low minority carrier lifetime (τ). The maximum values for these critical parameters in polycrystalling devices are p <; 1015 cm-3 and τ ~ 10 ns with open-circuit voltage (VOC) ~ 900 mV and η ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield a higher-efficiency PV device. Using numerical simulation, we investigate the combined effects of minority carrier lifetime τ (0.1 - 500 ns) and carrier density p (1×1014 - 5×1018 cm-3) on device performance, predicting obtainable performance of VOC > 1100 mV and η > 25% for high τ and high p. While the VOC is strongly affected by both p and τ, the short-circuit current (JSC) is mainly dependent on the lifetime τ and absorption losses in the front contact stack. In addition, increasing the thickness of p-CdTe (varied from 0.5 - 20 μm) at different τ (1 - 100 ns) shows an improvement in JSC due to increased long-wavelength photon collection and then saturates for thicker p-CdTe. In some cases, the cell performance is compromised by the presence of a significant back-contact barrier Φb. The simulated results show that the cell performance is not strongly affected until Φb exceeds 0.4 eV.
{"title":"Exploring the potential for high-quality epitaxial CdTe solar cells","authors":"Tao Song, A. Kanevce, J. Sites","doi":"10.1109/PVSC.2014.6925414","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925414","url":null,"abstract":"Traditional polycrystalline CdTe solar cell performance is limited by recombination at the grain boundaries, low carrier density (p), compensation from impurities, and a low minority carrier lifetime (τ). The maximum values for these critical parameters in polycrystalling devices are p <; 10<sup>15</sup> cm<sup>-3</sup> and τ ~ 10 ns with open-circuit voltage (V<sub>OC</sub>) ~ 900 mV and η ~ 20%. Epitaxial CdTe with high-quality, low defect-density, and high carrier density, could yield a higher-efficiency PV device. Using numerical simulation, we investigate the combined effects of minority carrier lifetime τ (0.1 - 500 ns) and carrier density p (1×10<sup>14</sup> - 5×10<sup>18</sup> cm<sup>-3</sup>) on device performance, predicting obtainable performance of V<sub>OC</sub> > 1100 mV and η > 25% for high τ and high p. While the V<sub>OC</sub> is strongly affected by both p and τ, the short-circuit current (J<sub>SC</sub>) is mainly dependent on the lifetime τ and absorption losses in the front contact stack. In addition, increasing the thickness of p-CdTe (varied from 0.5 - 20 μm) at different τ (1 - 100 ns) shows an improvement in J<sub>SC</sub> due to increased long-wavelength photon collection and then saturates for thicker p-CdTe. In some cases, the cell performance is compromised by the presence of a significant back-contact barrier Φ<sub>b</sub>. The simulated results show that the cell performance is not strongly affected until Φ<sub>b</sub> exceeds 0.4 eV.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"40 1","pages":"2412-2415"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91070894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925177
J. West, Somayeh Imani, O. Lavrova, William Cavanaugh, J. Ju, Kanamu Pupuhi, Smitha Keshavmurthy, Jim Aarestad, P. Zarkesh-Ha
This paper presents a novel reconfigurable power management architecture for PV modules. This architecture allows for operation or isolation (islanding) of individual or groups of cells. Flexible Voc and Isc combinations may be achieved with switching speeds up to 1MHz. Multiple advantages and functionalities can be achieved, such as lower power losses if one cell is shaded or degrading, variable optimized maximum power point tracking, integrated monitoring and communication from PV modules, longer lifetime and others. In order to properly understand the benefits of cell-level switching, bypassing and MPPT, a simulation framework was developed using NGSPICE and Octave which allows component-level simulation of PV modules.
{"title":"Reconfigurable power management using novel monolithically integrated CMOS-on-PV switch","authors":"J. West, Somayeh Imani, O. Lavrova, William Cavanaugh, J. Ju, Kanamu Pupuhi, Smitha Keshavmurthy, Jim Aarestad, P. Zarkesh-Ha","doi":"10.1109/PVSC.2014.6925177","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925177","url":null,"abstract":"This paper presents a novel reconfigurable power management architecture for PV modules. This architecture allows for operation or isolation (islanding) of individual or groups of cells. Flexible Voc and Isc combinations may be achieved with switching speeds up to 1MHz. Multiple advantages and functionalities can be achieved, such as lower power losses if one cell is shaded or degrading, variable optimized maximum power point tracking, integrated monitoring and communication from PV modules, longer lifetime and others. In order to properly understand the benefits of cell-level switching, bypassing and MPPT, a simulation framework was developed using NGSPICE and Octave which allows component-level simulation of PV modules.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"24 1","pages":"1389-1392"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91161079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925140
S. Sandeep, A. Kottantharayil
We have demonstrated a novel process for the fabrication of inverted pyramidal structures on Silicon. The proposed technique does not use any photolithography step and is instead replaced by a thin film deposition step and thermal annealing. In this work, Inductively Coupled Plasma CVD(ICP-CVD) silicon nitride was used as the thin film. The blisters are formed upon annealing and the silicon nitride film remaining on the surface act as an etch mask for the texturization process which is carried out in alkaline solution. The impact of blistering process on the silicon wafer surface is reported. The role of silane flow, annealing temperature and time on the blistering shape, size and density is also reported.
{"title":"Photolithography free inverted pyramidal texturing for solar cell applications","authors":"S. Sandeep, A. Kottantharayil","doi":"10.1109/PVSC.2014.6925140","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925140","url":null,"abstract":"We have demonstrated a novel process for the fabrication of inverted pyramidal structures on Silicon. The proposed technique does not use any photolithography step and is instead replaced by a thin film deposition step and thermal annealing. In this work, Inductively Coupled Plasma CVD(ICP-CVD) silicon nitride was used as the thin film. The blisters are formed upon annealing and the silicon nitride film remaining on the surface act as an etch mask for the texturization process which is carried out in alkaline solution. The impact of blistering process on the silicon wafer surface is reported. The role of silane flow, annealing temperature and time on the blistering shape, size and density is also reported.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"1244-1247"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91313118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925344
Kyusang Lee, Jaesang Lee, Bryan A. Mazor, S. Forrest
We demonstrate the integration of GaAs thin-film solar cells with low-cost plastic mini-compound parabolic concentrators (CPC) by combing a non-destructive epitaxial lift-off (ND-ELO) technique and a vacuum-assisted thermoforming process. To simplify the thin film III-V active layer transfer and to eliminate the use of adhesives of the epi to the secondary plastic substrate, we employ cold-weld bonding. The integration of thin film GaAs photovoltaic cells with a low-cost plastic mini CPC that can track solar radiation increases energy harvesting by a factor of 2. The Combination of cost effective concentrators with previously demonstrated non-destructive wafer recycling utilizing epitaxial protection layers provides the potential for a dramatic cost reduction in the production of III-V semiconductor photovoltaic cells.
{"title":"Epitaxial lift-off processed GaAs thin-film solar cells integrated with low-cost plastic mini-compound parabolic concentrators","authors":"Kyusang Lee, Jaesang Lee, Bryan A. Mazor, S. Forrest","doi":"10.1109/PVSC.2014.6925344","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925344","url":null,"abstract":"We demonstrate the integration of GaAs thin-film solar cells with low-cost plastic mini-compound parabolic concentrators (CPC) by combing a non-destructive epitaxial lift-off (ND-ELO) technique and a vacuum-assisted thermoforming process. To simplify the thin film III-V active layer transfer and to eliminate the use of adhesives of the epi to the secondary plastic substrate, we employ cold-weld bonding. The integration of thin film GaAs photovoltaic cells with a low-cost plastic mini CPC that can track solar radiation increases energy harvesting by a factor of 2. The Combination of cost effective concentrators with previously demonstrated non-destructive wafer recycling utilizing epitaxial protection layers provides the potential for a dramatic cost reduction in the production of III-V semiconductor photovoltaic cells.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"78 1","pages":"2127-2129"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90116033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925623
M. Tayyib, J. Odden, N. Ramchander, M. B. Prakash, T. Surendra, R. Muneeshwar, A. Sarma, M. Ramanjaneyulu, T. O. Saetre
Summarizes two years performance of an Elkem Solar and polysilicon photovoltaic (PV) system installed in the Sunbelt Region, which has been fully operational since 2011. The PV system consists of 28 multicrystalline silicon PV modules made from the standard Siemens process and from material produced by a metallurgical route - the Elkem Solar Silicon (ESS®) process. The present study suggests that after two years of field operation, both types of modules show similar degradation of power at STC. The ESS® PV modules have better performance than standard polysilicon modules as a function of solar irradiation, and thereby the total kWh generated has been slightly higher for the ESS® modules.
{"title":"Two years performance comparison of Elkem Solar multicrystalline silicon with polysilicon in a PV grid-connected system","authors":"M. Tayyib, J. Odden, N. Ramchander, M. B. Prakash, T. Surendra, R. Muneeshwar, A. Sarma, M. Ramanjaneyulu, T. O. Saetre","doi":"10.1109/PVSC.2014.6925623","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925623","url":null,"abstract":"Summarizes two years performance of an Elkem Solar and polysilicon photovoltaic (PV) system installed in the Sunbelt Region, which has been fully operational since 2011. The PV system consists of 28 multicrystalline silicon PV modules made from the standard Siemens process and from material produced by a metallurgical route - the Elkem Solar Silicon (ESS®) process. The present study suggests that after two years of field operation, both types of modules show similar degradation of power at STC. The ESS® PV modules have better performance than standard polysilicon modules as a function of solar irradiation, and thereby the total kWh generated has been slightly higher for the ESS® modules.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"35 1","pages":"3230-3233"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90541407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925553
Tseng-Jung Chang, Sean H. T. Chen, Chia-yu Shen, Shao-Peng Su, Li-Wei Cheng
In this study, we demonstrate a concept for optimizing the alloying process for Al-p+ emitter formation with a commercially available aluminum paste, screen-printing technology and belt-conveyor furnace. A more uniform and conformal Al-p+ emitter is obtained at the sample with slow cooling condition of alloying process. Among the 8μm-thick emitters formed by various alloying profiles, the result shows the condition with moderate cooling rate leads to lower J0e. For long cooling condition with proper ramping, the J0e of non-passivated p+ is at 217fA/cm2 which corresponds to an implied Voc at 669mV.
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