Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925677
B. Blank, C. Ulbrich, B. Pieters, A. Gerber, U. Rau
In thin-film tandem solar cells the sub cells are usually connected in series. The inherent current-limitation needs to be considered when optimizing the efficiency, but furthermore leads to challenges when comparing the sub cells performances of differently matched tandem cells. We have introduced the Power-Matching-Method that characterizes the device not only under one standard spectrum but under various spectral distributions. By this method, the same tandem cell can be characterized under various matching conditions. Based on simulations, we demonstrate a convenient way to compare differently matched tandem solar cells. Moreover, our simulations show that the method allows distinguishing between matching effects and changes in the sub-cells properties, e.g. changes due to the Staebler-Wronski-Effect.
{"title":"Degradation of tandem solar cells: Separating matching effects from Staebler-Wronski Effect using the Power-Matching-Method","authors":"B. Blank, C. Ulbrich, B. Pieters, A. Gerber, U. Rau","doi":"10.1109/PVSC.2014.6925677","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925677","url":null,"abstract":"In thin-film tandem solar cells the sub cells are usually connected in series. The inherent current-limitation needs to be considered when optimizing the efficiency, but furthermore leads to challenges when comparing the sub cells performances of differently matched tandem cells. We have introduced the Power-Matching-Method that characterizes the device not only under one standard spectrum but under various spectral distributions. By this method, the same tandem cell can be characterized under various matching conditions. Based on simulations, we demonstrate a convenient way to compare differently matched tandem solar cells. Moreover, our simulations show that the method allows distinguishing between matching effects and changes in the sub-cells properties, e.g. changes due to the Staebler-Wronski-Effect.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"14 1","pages":"3457-3462"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76954356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925106
D. K. Rai, Bikas Ranjan, A. Panchal, K. Balasubramaniam, C. Solanki
The objective is to develop better understanding of the optical behavior of a-Si/SiNX multilayer with silicon quantum dots (Si-QDs) which can be used as light absorber material for Si-QD based solar cells. In this work, reflectance of a-Si, SiNX/a-Si, a-Si/SiNX and SiNX/a-Si/SiNX structured films with Si-QDs and without Si-QDs were examined. Hydrogen passivation (H-passivation) of a film with Si-QDs or without Si-QDs showed negligible effect on the optical property of the film. The films with Si-QDs before and after H-passivation showed low reflectance of light in the wavelength range of 200-600 nm compared to the films without Si-QDs. The enhancement in the absorption of light in the films is attributed to the Si-QDs and the quantum confinement effect (QCE).
{"title":"Effect of hydrogen passivation on optical properties of a-Si/SiNX multilayered films with Si-QDs and without Si-QDs","authors":"D. K. Rai, Bikas Ranjan, A. Panchal, K. Balasubramaniam, C. Solanki","doi":"10.1109/PVSC.2014.6925106","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925106","url":null,"abstract":"The objective is to develop better understanding of the optical behavior of a-Si/SiNX multilayer with silicon quantum dots (Si-QDs) which can be used as light absorber material for Si-QD based solar cells. In this work, reflectance of a-Si, SiNX/a-Si, a-Si/SiNX and SiNX/a-Si/SiNX structured films with Si-QDs and without Si-QDs were examined. Hydrogen passivation (H-passivation) of a film with Si-QDs or without Si-QDs showed negligible effect on the optical property of the film. The films with Si-QDs before and after H-passivation showed low reflectance of light in the wavelength range of 200-600 nm compared to the films without Si-QDs. The enhancement in the absorption of light in the films is attributed to the Si-QDs and the quantum confinement effect (QCE).","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"30 1","pages":"1096-1098"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75189902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925488
W. Palitzsch, Petra Schönherr, U. Loser
Cadmium, selenium, tellurium, gallium, molybdenum, indium and silicon are some of the major elements used in these photo voltaic cells. We know about the future limits in the availability of these elements. So recycling is required as the most advisable end-of-life strategy and to save the raw materials from production wastes now. On the other hand statutory prescriptions, as e.g. the German "Kreislaufivirtschaftsgesetz" (law encouraging closed-loop economy) are asking for a maximum quota of recycling - and a minimum use of resources (e.g. energy, raw materials). We report a method for extracting and reclaiming metals from scrap of CIS, CIGS or CdTe systems and associated photovoltaic manufacturing waste. We also discuss the application of our method to new PV systems, such as substrates other than glass (aluminum or stainless steel foil sheets), and other semiconductors such as GaAs. It is well known that the rare metals combined typically only represent 1 % of the mass of a photovoltaic panel, their value is significant. So for example on crystalline silicon silver is found. The current value for silver (6th of June 2011) was 1171 USD per kilogram Our procedure is another building block for a comprehensive recycling, because it saves chemicals and there is less waste water generated. We understand that loss of metals, particularly silver and aluminium for our case is another impact of lack of good recycling procedures of photo voltaic panels. We can demetalhe coated and patterned silicon wafers, as well as broken solar cells or production scrap, by using a very simple method to minimize waste and to simultaneously produce marketable products. For thin film photo voltaic waste we finished piloting our new universal recycling procedure. We obtained a very high level quality of glass, usable demonstrably for float glass production.
{"title":"Integrated approach for economic PV waste recycling","authors":"W. Palitzsch, Petra Schönherr, U. Loser","doi":"10.1109/PVSC.2014.6925488","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925488","url":null,"abstract":"Cadmium, selenium, tellurium, gallium, molybdenum, indium and silicon are some of the major elements used in these photo voltaic cells. We know about the future limits in the availability of these elements. So recycling is required as the most advisable end-of-life strategy and to save the raw materials from production wastes now. On the other hand statutory prescriptions, as e.g. the German \"Kreislaufivirtschaftsgesetz\" (law encouraging closed-loop economy) are asking for a maximum quota of recycling - and a minimum use of resources (e.g. energy, raw materials). We report a method for extracting and reclaiming metals from scrap of CIS, CIGS or CdTe systems and associated photovoltaic manufacturing waste. We also discuss the application of our method to new PV systems, such as substrates other than glass (aluminum or stainless steel foil sheets), and other semiconductors such as GaAs. It is well known that the rare metals combined typically only represent 1 % of the mass of a photovoltaic panel, their value is significant. So for example on crystalline silicon silver is found. The current value for silver (6th of June 2011) was 1171 USD per kilogram Our procedure is another building block for a comprehensive recycling, because it saves chemicals and there is less waste water generated. We understand that loss of metals, particularly silver and aluminium for our case is another impact of lack of good recycling procedures of photo voltaic panels. We can demetalhe coated and patterned silicon wafers, as well as broken solar cells or production scrap, by using a very simple method to minimize waste and to simultaneously produce marketable products. For thin film photo voltaic waste we finished piloting our new universal recycling procedure. We obtained a very high level quality of glass, usable demonstrably for float glass production.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"31 1","pages":"2709-2711"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75492643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925530
D. Alonso-Álvarez, M. Fuhrer, T. Thomas, N. Ekins-Daukes
Multi-quantum wells structures provide some flexibility for adjusting the absorption edge of multi-junction sub-cells. In order to obtain the desirable performance, it is essential to have an accurate model of the MQW properties and of the solar cell as a whole, including the light absorption, carrier extraction and carrier collection mechanisms. In this work, we show that Shockley-Read-Hall (SRH) recombination and insufficient light absorption are the main limiting factors for achieving high currents. The former can be reduced by a smart placement of the QWs inside the structure. By leaving a gap in the MQW stack, where SRH recombination is maximum, an improvement of the current at the maximum power point can be achieved without adding QWs. Increasing their number enhances light absorption but also the thickness of the device and the difficulty for carrier transport across the QW region. In this case, knowing the background doping and the carrier mobilities help to make an optimum solar cell design. In particular, we find than an intentional, low doping might lead to higher currents with short QW stacks than using a longer ones on an intrinsic region.
{"title":"Elements of modelling and design of multi-quantum well solar cells","authors":"D. Alonso-Álvarez, M. Fuhrer, T. Thomas, N. Ekins-Daukes","doi":"10.1109/PVSC.2014.6925530","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925530","url":null,"abstract":"Multi-quantum wells structures provide some flexibility for adjusting the absorption edge of multi-junction sub-cells. In order to obtain the desirable performance, it is essential to have an accurate model of the MQW properties and of the solar cell as a whole, including the light absorption, carrier extraction and carrier collection mechanisms. In this work, we show that Shockley-Read-Hall (SRH) recombination and insufficient light absorption are the main limiting factors for achieving high currents. The former can be reduced by a smart placement of the QWs inside the structure. By leaving a gap in the MQW stack, where SRH recombination is maximum, an improvement of the current at the maximum power point can be achieved without adding QWs. Increasing their number enhances light absorption but also the thickness of the device and the difficulty for carrier transport across the QW region. In this case, knowing the background doping and the carrier mobilities help to make an optimum solar cell design. In particular, we find than an intentional, low doping might lead to higher currents with short QW stacks than using a longer ones on an intrinsic region.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"31 1","pages":"2865-2870"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77842968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925459
F. J. Ramos, David Cortes, Aránzazu Aguirre, F. J. Castano, Shahzad Ahmad
Perovskite-based solar cells are now emerging as an economically viable alternative for efficient photovoltaic energy harvesting. Using solution-based processing routes alone, devices with power conversion efficiencies exceeding 15% can be fabricated, in principle at a fraction of costs reported for other photovoltaic technologies. In these excitonic solar cells, the perovskites multifunctional nature allow these layers to behave as light absorber, electron conductor and hole transporting material, depending on the device architecture. In order to further optimize these devices and render them industrial feasible, device stability and encapsulation are of paramount importance. In the present contribution, the fabrication and encapsulation of perovskite-based solar cells will be presented and discussed. To the best of our knowledge this is the first study describing industry relevant encapsulation and device data.
{"title":"Fabrication and encapsulation of perovskites sensitized solid state solar cells","authors":"F. J. Ramos, David Cortes, Aránzazu Aguirre, F. J. Castano, Shahzad Ahmad","doi":"10.1109/PVSC.2014.6925459","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925459","url":null,"abstract":"Perovskite-based solar cells are now emerging as an economically viable alternative for efficient photovoltaic energy harvesting. Using solution-based processing routes alone, devices with power conversion efficiencies exceeding 15% can be fabricated, in principle at a fraction of costs reported for other photovoltaic technologies. In these excitonic solar cells, the perovskites multifunctional nature allow these layers to behave as light absorber, electron conductor and hole transporting material, depending on the device architecture. In order to further optimize these devices and render them industrial feasible, device stability and encapsulation are of paramount importance. In the present contribution, the fabrication and encapsulation of perovskite-based solar cells will be presented and discussed. To the best of our knowledge this is the first study describing industry relevant encapsulation and device data.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"66 1","pages":"2584-2587"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76287602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925367
C. Eisler, Emily C. Warmann, C. Flowers, Michelle Dee, Emily D. Kosten, H. Atwater
A spectrum-splitting module design, the polyhedral specular reflector (PSR), is proposed for ultra-high photovoltaic efficiency (>50%). Incident light is mildly concentrated (≤16 suns) and subsequently split seven ways by a series of multilayer dielectric filters. The split spectrum is directed into compound parabolic concentrators (CPCs) and each concentrates a given slice of the spectrum onto one of seven subcells for conversion. We have recently made significant improvements to the design, such as vertically stacking each submodule and rearranging the subcell order to increase the optical efficiency of the design. We optimize the concentration and composition of the parallelepiped prism (hollow vs. solid) and model designs with >50% module efficiencies including optical and cell nonidealities.
{"title":"Design improvements for the polyhedral specular reflector spectrum-splitting module for ultra-high efficiency (>50%)","authors":"C. Eisler, Emily C. Warmann, C. Flowers, Michelle Dee, Emily D. Kosten, H. Atwater","doi":"10.1109/PVSC.2014.6925367","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925367","url":null,"abstract":"A spectrum-splitting module design, the polyhedral specular reflector (PSR), is proposed for ultra-high photovoltaic efficiency (>50%). Incident light is mildly concentrated (≤16 suns) and subsequently split seven ways by a series of multilayer dielectric filters. The split spectrum is directed into compound parabolic concentrators (CPCs) and each concentrates a given slice of the spectrum onto one of seven subcells for conversion. We have recently made significant improvements to the design, such as vertically stacking each submodule and rearranging the subcell order to increase the optical efficiency of the design. We optimize the concentration and composition of the parallelepiped prism (hollow vs. solid) and model designs with >50% module efficiencies including optical and cell nonidealities.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"17 1","pages":"2224-2229"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75612256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925293
A. Flø, I. Burud, E. Olsen
Spatially and spectrally resolved defect related photoluminescence of multicrystalline Silicon wafers has been obtained through hyperspectral photoluminescence imaging. The defect related emissions has been studied as a function of temperature, between 300 K (room temperature) and 87 K. The emissions D1, 0.72 eV, VID3 (0.93 eV) and BB (1,1 eV) emissions are detectable at all temperatures and their peak intensities seem to shift to higher energies with decreasing temperatures. A similar shift in the peak energy for the D2 signal is measured, however, the D2 signal is not visible at room temperature and becomes detectable at 127 K. The D3 and D4 transitions do not exhibit a shift in photon energy with temperature.
{"title":"Spatially and spectrally resolved temperature dependence of defect related luminescence using hyperspectral imaging","authors":"A. Flø, I. Burud, E. Olsen","doi":"10.1109/PVSC.2014.6925293","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925293","url":null,"abstract":"Spatially and spectrally resolved defect related photoluminescence of multicrystalline Silicon wafers has been obtained through hyperspectral photoluminescence imaging. The defect related emissions has been studied as a function of temperature, between 300 K (room temperature) and 87 K. The emissions D1, 0.72 eV, VID3 (0.93 eV) and BB (1,1 eV) emissions are detectable at all temperatures and their peak intensities seem to shift to higher energies with decreasing temperatures. A similar shift in the peak energy for the D2 signal is measured, however, the D2 signal is not visible at room temperature and becomes detectable at 127 K. The D3 and D4 transitions do not exhibit a shift in photon energy with temperature.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"21 1","pages":"1888-1892"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74723439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925215
Hong-Jhang Syu, T. Subramani, Chien-Ting Liu, S. Shiu, Ching-Fuh Lin
In this work, we added Zonyl fluorosurfactant into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to improve the affinity of PEDOT:PSS and silicon nanowire (SiNW) arrays. The concentration of Zonyl fluorosurfactant is 0%, 0.1%, 0.5%, 1%, and 10%. The 0.5%-Zonyl treated PEDOT:PSS/SiNW solar cell has the highest open-circuit voltage of 0.541 V, but the best efficiency is the device with 0.1%-Zonyl treated PEDOT:PSS. The efficiency is 9.18%.
{"title":"Silicon nanowire/organic hybrid solar cells with zonyl fluorosurfactanct treated PEDOT:PSS","authors":"Hong-Jhang Syu, T. Subramani, Chien-Ting Liu, S. Shiu, Ching-Fuh Lin","doi":"10.1109/PVSC.2014.6925215","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925215","url":null,"abstract":"In this work, we added Zonyl fluorosurfactant into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) to improve the affinity of PEDOT:PSS and silicon nanowire (SiNW) arrays. The concentration of Zonyl fluorosurfactant is 0%, 0.1%, 0.5%, 1%, and 10%. The 0.5%-Zonyl treated PEDOT:PSS/SiNW solar cell has the highest open-circuit voltage of 0.541 V, but the best efficiency is the device with 0.1%-Zonyl treated PEDOT:PSS. The efficiency is 9.18%.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"29 1","pages":"1560-1562"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74786866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925261
Ishtiaq Maqsood, L. Cundy, M. Biesecker, Jung-Han Kimn, Elise Darlington, Ethan P. Hettwer, Sabina Schill, V. Bommisetty
Monte Carlo simulation was conducted to analyze the significance of morphology domains on charge transport dynamics in organic bulk heterojunction solar cells. Mesoscale simulation was performed using first reaction method with exponential charge carrier lifetime. Current density vs voltage characteristics were obtained for evenly distributed, graded and ordered morphologies. It was observed that assuming 100% exciton dissociation graded morphology resulted better power conversion efficiency than evenly distributed morphology due to improvement in fill factor (FF).
{"title":"Charge transport kinetics in organic bulk heterojunction morphologies: Mesoscale Monte Carlo simulation analysis","authors":"Ishtiaq Maqsood, L. Cundy, M. Biesecker, Jung-Han Kimn, Elise Darlington, Ethan P. Hettwer, Sabina Schill, V. Bommisetty","doi":"10.1109/PVSC.2014.6925261","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925261","url":null,"abstract":"Monte Carlo simulation was conducted to analyze the significance of morphology domains on charge transport dynamics in organic bulk heterojunction solar cells. Mesoscale simulation was performed using first reaction method with exponential charge carrier lifetime. Current density vs voltage characteristics were obtained for evenly distributed, graded and ordered morphologies. It was observed that assuming 100% exciton dissociation graded morphology resulted better power conversion efficiency than evenly distributed morphology due to improvement in fill factor (FF).","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"65 1","pages":"1758-1761"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73224904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925550
R. Buchwald, Sindy Wurzner, K. Frohlich, M. Fuchs, S. Retsch, T. Lehmann, H. J. Moller
The goal of this work was to investigate the influence of different sawing coolants concerning topography parameters and fracture strength of diamond wire sawn Cz- and mc-Si wafers. Therefore, silicon bricks were sawn using glycol- and water-based coolants. Fracture strength was determined by four bending bar fracture test setup. Additionally, crack depth analyses on beveled samples depending on the crystal orientation of the investigated grains have been done by means of XRD measurements. We found a strong indication of a crystal orientation dependency of the crack depth. Furthermore, we have made single scratch tests with a novel scratch test technique, which offers the possibility to use test parameters comparable to real sawing conditions. The scratch tests have been done on Cz-Si. We investigated the cracks using OCM and SEM images as well as Raman spectroscopy of cross section preparations through the single scratches.
{"title":"Analysis of the topography and the sub-surface damage of Cz- and mc-silicon wafers sawn with diamond wire","authors":"R. Buchwald, Sindy Wurzner, K. Frohlich, M. Fuchs, S. Retsch, T. Lehmann, H. J. Moller","doi":"10.1109/PVSC.2014.6925550","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925550","url":null,"abstract":"The goal of this work was to investigate the influence of different sawing coolants concerning topography parameters and fracture strength of diamond wire sawn Cz- and mc-Si wafers. Therefore, silicon bricks were sawn using glycol- and water-based coolants. Fracture strength was determined by four bending bar fracture test setup. Additionally, crack depth analyses on beveled samples depending on the crystal orientation of the investigated grains have been done by means of XRD measurements. We found a strong indication of a crystal orientation dependency of the crack depth. Furthermore, we have made single scratch tests with a novel scratch test technique, which offers the possibility to use test parameters comparable to real sawing conditions. The scratch tests have been done on Cz-Si. We investigated the cracks using OCM and SEM images as well as Raman spectroscopy of cross section preparations through the single scratches.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"7 1","pages":"2951-2956"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74266325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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