Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700868
D. Donahue, P. D. de Falco, T. Barton
This work presents a radio-frequency power amplifier (RF PA) with load impedance sensing integrated directly into the output matching network (OMN), for in-situ monitoring in applications such as electronically steered phased arrays. Using reflectometry techniques that have been previously applied to sampled transmission lines and other six-port reflectometers, power sampling is instead applied directly to the existing OMN of a class-AB harmonically-tuned PA. This enables load impedance variations to be directly measured without requiring additional elements in the RF path. The prototype sampled-OMN PA demonstrates nearly identical RF performance when characterized with and without impedance sensing. Initial results based on load pull measurements demonstrate the feasibility of this sensing approach.
{"title":"Impedance Sensing Integrated Directly into a Power Amplifier Output Matching Network","authors":"D. Donahue, P. D. de Falco, T. Barton","doi":"10.1109/mwsym.2019.8700868","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700868","url":null,"abstract":"This work presents a radio-frequency power amplifier (RF PA) with load impedance sensing integrated directly into the output matching network (OMN), for in-situ monitoring in applications such as electronically steered phased arrays. Using reflectometry techniques that have been previously applied to sampled transmission lines and other six-port reflectometers, power sampling is instead applied directly to the existing OMN of a class-AB harmonically-tuned PA. This enables load impedance variations to be directly measured without requiring additional elements in the RF path. The prototype sampled-OMN PA demonstrates nearly identical RF performance when characterized with and without impedance sensing. Initial results based on load pull measurements demonstrate the feasibility of this sensing approach.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"208 1","pages":"983-986"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74589103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700813
G. Wen, Jian Li, Fuzhen Xie, Huiru Wang, Yongjun Huang
In this paper, a novel defected ground structure (DGS) is proposed and used to integrate into the metallic layer of millimeter-wave substrate integrated waveguide (SIW) to form bandpass filters. The lower stopband and upper stopband of the designed bandpass filter are achieved by, respectively, the nature cut-off frequency of SIW and the band notching property of the new proposed DGS. Numerical optimizations and experimental demonstrations are carried out to validate two of the proposed filters operating at different frequencies within Ka-band and the good agreements are obtained.
{"title":"Millimeter-Wave SIW Filter Based on the Stepped-Impedance Face-to-Face E-Shaped DGSs","authors":"G. Wen, Jian Li, Fuzhen Xie, Huiru Wang, Yongjun Huang","doi":"10.1109/mwsym.2019.8700813","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700813","url":null,"abstract":"In this paper, a novel defected ground structure (DGS) is proposed and used to integrate into the metallic layer of millimeter-wave substrate integrated waveguide (SIW) to form bandpass filters. The lower stopband and upper stopband of the designed bandpass filter are achieved by, respectively, the nature cut-off frequency of SIW and the band notching property of the new proposed DGS. Numerical optimizations and experimental demonstrations are carried out to validate two of the proposed filters operating at different frequencies within Ka-band and the good agreements are obtained.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"20 1","pages":"830-833"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75359507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700987
A. Hamed, M. Saeed, Zhenxing Wang, M. Shaygan, D. Neumaier, R. Negra
In this paper, we demonstrate the design, fabrication, and characterisation of the first frequency doubler circuit employing graphene diodes. Exploiting the nonlinearity reported for state-of-the-art graphene diodes, a fully integrated, balanced microwave frequency doubler is realised on a 500-μm thick quartz substrate. The presented circuit shows broadband operation from 7-13 GHz and achieves −25.3 dB of conversion gain and −15.3 dBm of output power at an output frequency of 9.2 GHz.
{"title":"X-Band MMIC Balanced Frequency Doubler based on Graphene Diodes","authors":"A. Hamed, M. Saeed, Zhenxing Wang, M. Shaygan, D. Neumaier, R. Negra","doi":"10.1109/mwsym.2019.8700987","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700987","url":null,"abstract":"In this paper, we demonstrate the design, fabrication, and characterisation of the first frequency doubler circuit employing graphene diodes. Exploiting the nonlinearity reported for state-of-the-art graphene diodes, a fully integrated, balanced microwave frequency doubler is realised on a 500-μm thick quartz substrate. The presented circuit shows broadband operation from 7-13 GHz and achieves −25.3 dB of conversion gain and −15.3 dBm of output power at an output frequency of 9.2 GHz.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"65 1","pages":"930-933"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72562149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700730
H. Cui, Z. Yao, Y. Wang
A nonlinear circuit model is developed for magnetic material based frequency-selective limiters (FSL). The dominant magnetic-behaviors of FSL devices are translated into equivalent circuits with parameters rigorously determined from fundamental physics. The spin motions as well as the ferromagnetic resonance (FMR) are modeled by RLC parallel circuits with parameters derived from Polder’s tensor and Kittel’s equations. The exchange coupling between spins is modeled by an inductor added between adjacent RLC circuits based on quantum spin theory. The nonlinear cross-frequency coupling from signal at ω to spin waves at ω/2 is represented by a pendulum model that predicts the parametric oscillations of spins. A FSL device described in literature is used as an example to validate the circuit model. The simulation results match the measurement results published, and the model successfully predicts the threshold power level, nonlinear insertion loss, time delay, and frequency selectivity of the device.
{"title":"Coupling Electromagnetic Waves to Spin Waves: A Compact Model for Frequency Selective Limiters","authors":"H. Cui, Z. Yao, Y. Wang","doi":"10.1109/mwsym.2019.8700730","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700730","url":null,"abstract":"A nonlinear circuit model is developed for magnetic material based frequency-selective limiters (FSL). The dominant magnetic-behaviors of FSL devices are translated into equivalent circuits with parameters rigorously determined from fundamental physics. The spin motions as well as the ferromagnetic resonance (FMR) are modeled by RLC parallel circuits with parameters derived from Polder’s tensor and Kittel’s equations. The exchange coupling between spins is modeled by an inductor added between adjacent RLC circuits based on quantum spin theory. The nonlinear cross-frequency coupling from signal at ω to spin waves at ω/2 is represented by a pendulum model that predicts the parametric oscillations of spins. A FSL device described in literature is used as an example to validate the circuit model. The simulation results match the measurement results published, and the model successfully predicts the threshold power level, nonlinear insertion loss, time delay, and frequency selectivity of the device.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"17 1","pages":"591-594"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72679871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700932
E. Ng, A. Ayed, P. Mitran, S. Boumaiza
We investigate the application of single-input single-output (SISO) digital predistortion (DPD) to mitigate the nonlinearity in millimeter-wave multi-user RF beamforming arrays. In principle, SISO DPD may not be sufficient to linearize such arrays as a multiple-input one may be required due to coupling between the sub-array antennas. Nevertheless, in practice, the coupling between antennas of different sub-arrays may be much smaller than the coupling between antennas of the same sub-array. It is first shown mathematically that if the coupling between sub-arrays is small, then SISO DPD is sufficient to linearize such arrays. This is then confirmed in practice by linearizing two co-located 64-element sub-arrays driven by 800 MHz modulated signals at 28 GHz. Using four sets of SISO DPD coefficients, the EVM and ACPR were improved from as much as 8% and 30 dBc to better than 2% and 40 dBc, respectively, across all steering angle combinations of the two sub-arrays.
{"title":"Single-Input Single-Output Digital Predistortion of Multi-user RF Beamforming Arrays","authors":"E. Ng, A. Ayed, P. Mitran, S. Boumaiza","doi":"10.1109/mwsym.2019.8700932","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700932","url":null,"abstract":"We investigate the application of single-input single-output (SISO) digital predistortion (DPD) to mitigate the nonlinearity in millimeter-wave multi-user RF beamforming arrays. In principle, SISO DPD may not be sufficient to linearize such arrays as a multiple-input one may be required due to coupling between the sub-array antennas. Nevertheless, in practice, the coupling between antennas of different sub-arrays may be much smaller than the coupling between antennas of the same sub-array. It is first shown mathematically that if the coupling between sub-arrays is small, then SISO DPD is sufficient to linearize such arrays. This is then confirmed in practice by linearizing two co-located 64-element sub-arrays driven by 800 MHz modulated signals at 28 GHz. Using four sets of SISO DPD coefficients, the EVM and ACPR were improved from as much as 8% and 30 dBc to better than 2% and 40 dBc, respectively, across all steering angle combinations of the two sub-arrays.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"117 1","pages":"472-475"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79256352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700951
P. Neininger, L. John, P. Brückner, C. Friesicke, R. Quay, T. Zwick
This paper reports on the analysis, development and results of a wideband High Power Amplifier (HPA) covering a large segment of the Ka-Band. The presented circuit has been manufactured in a GaN-on-SiC process with a gate length of 100 nm with three different process variants. It reaches a linear gain of well over 22 dB and an output power between 6 and 9 W in the band of 26 to 35 GHz, which equals a fractional bandwidth of over 29 %, while also maintaining a state-of-the-art power-added efficiency. To the best of the authors’ knowledge, this is the most broadband HPA over 7 W published in this frequency band.
{"title":"Design, Analysis and Evaluation of a Broadband High-Power Amplifier for Ka-Band Frequencies","authors":"P. Neininger, L. John, P. Brückner, C. Friesicke, R. Quay, T. Zwick","doi":"10.1109/mwsym.2019.8700951","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700951","url":null,"abstract":"This paper reports on the analysis, development and results of a wideband High Power Amplifier (HPA) covering a large segment of the Ka-Band. The presented circuit has been manufactured in a GaN-on-SiC process with a gate length of 100 nm with three different process variants. It reaches a linear gain of well over 22 dB and an output power between 6 and 9 W in the band of 26 to 35 GHz, which equals a fractional bandwidth of over 29 %, while also maintaining a state-of-the-art power-added efficiency. To the best of the authors’ knowledge, this is the most broadband HPA over 7 W published in this frequency band.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"36 1","pages":"564-567"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81426821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700931
Tong-Hong Lin, S. Daskalakis, A. Georgiadis, M. Tentzeris
A novel multilayer flexible packaging fabrication process using only additively manufacturing techniques including inkjet and 3 dimensional (3D) printing is proposed. The 3D printed ramp structures and inkjet printed transmission lines on top of that are suitable for mm-wave inter-layer connections because lower parasitics are induced to the system. Moreover, a system-on-package (SoP) design for backscattering radio-frequency identification (RFID) is proposed. It has to be stressed, that an RF energy harvester operated at 26 GHz which is embedded inside the packaging using additively manufacturing techniques is proposed for the first time. The output voltage of the harvested energy at a distance of 20 cm away from the source is 0.9 V with transmitted equivalent isotropically radiated power (EIRP) equal to 59 dBm. The harvested energy is large enough to power the TS3001 timer for backscattering and can support all energy requirements of the entire SoP design so that the SoP design is fully autonomous and no external board or components are required. The system size can be shrunk to package level and thus paving the way for a multitude of novel miniaturized autonomous modules for wearable, IoT, and 5G applications.
{"title":"Achieving Fully Autonomous System-on-Package Designs: An Embedded-on-Package 5G Energy Harvester within 3D Printed Multilayer Flexible Packaging Structures","authors":"Tong-Hong Lin, S. Daskalakis, A. Georgiadis, M. Tentzeris","doi":"10.1109/mwsym.2019.8700931","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700931","url":null,"abstract":"A novel multilayer flexible packaging fabrication process using only additively manufacturing techniques including inkjet and 3 dimensional (3D) printing is proposed. The 3D printed ramp structures and inkjet printed transmission lines on top of that are suitable for mm-wave inter-layer connections because lower parasitics are induced to the system. Moreover, a system-on-package (SoP) design for backscattering radio-frequency identification (RFID) is proposed. It has to be stressed, that an RF energy harvester operated at 26 GHz which is embedded inside the packaging using additively manufacturing techniques is proposed for the first time. The output voltage of the harvested energy at a distance of 20 cm away from the source is 0.9 V with transmitted equivalent isotropically radiated power (EIRP) equal to 59 dBm. The harvested energy is large enough to power the TS3001 timer for backscattering and can support all energy requirements of the entire SoP design so that the SoP design is fully autonomous and no external board or components are required. The system size can be shrunk to package level and thus paving the way for a multitude of novel miniaturized autonomous modules for wearable, IoT, and 5G applications.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"30 1","pages":"1375-1378"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81543809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700919
A. Watson, Kareem S. Elassy, T. Leary, M. A. Rahman, A. Ohta, W. Shiroma, C. Tabor
Liquid metals such as gallium alloys have a unique potential to enable fully reconfigurable RF electronics. One of the major concerns for liquid-metal electronics is their interaction with solid-metal contacts, which results in unwanted changes to electrical performance and delamination of solid-metal contacts due to atomic diffusion of gallium at the liquid/solid interface. In this paper, we present a solution to this problem through way of liquid-metal/liquid-metal RF connections by implementing La-place barriers, which control fluid flow and position via pressure-sensitive thresholds to facilitate physical movement of the fluids within the channels. We demonstrate RF switching within the channel systems by fabricating, testing, and modeling a reconfigurable RF microstrip transmission line with integrated Laplace barriers which operates between 0.5–5 GHz. This approach opens the potential for future all-liquid reconfigurable RF electronic circuits where physical connections between solid and liquid metals are minimized or possibly eliminated altogether.
{"title":"Enabling Reconfigurable All-Liquid Microcircuits via Laplace Barriers to Control Liquid Metal","authors":"A. Watson, Kareem S. Elassy, T. Leary, M. A. Rahman, A. Ohta, W. Shiroma, C. Tabor","doi":"10.1109/mwsym.2019.8700919","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700919","url":null,"abstract":"Liquid metals such as gallium alloys have a unique potential to enable fully reconfigurable RF electronics. One of the major concerns for liquid-metal electronics is their interaction with solid-metal contacts, which results in unwanted changes to electrical performance and delamination of solid-metal contacts due to atomic diffusion of gallium at the liquid/solid interface. In this paper, we present a solution to this problem through way of liquid-metal/liquid-metal RF connections by implementing La-place barriers, which control fluid flow and position via pressure-sensitive thresholds to facilitate physical movement of the fluids within the channels. We demonstrate RF switching within the channel systems by fabricating, testing, and modeling a reconfigurable RF microstrip transmission line with integrated Laplace barriers which operates between 0.5–5 GHz. This approach opens the potential for future all-liquid reconfigurable RF electronic circuits where physical connections between solid and liquid metals are minimized or possibly eliminated altogether.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"7 1","pages":"188-191"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84330702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700815
Wei-Chih Su, Mu-Cyun Tang, Rezki El Arif, T. Horng, Fu-Kang Wang
This paper presents a single conversion stepped-frequency continuous-wave (SCSFCW) radar that uses self-injection-locking technology to achieve high sensitivity, Doppler resolution and range resolution. Moreover, the radar is capable of extracting tiny Doppler shifts from different range bins, so it has great potential to monitor vital signs of multiple people simultaneously. In the experiment, a 7.95-8.95 GHz SCSFCW prototype radar was constructed by an RF up-down converter pumped with a 5.5-6.5 GHz stepped chirp signal and a 2.45 GHz IF self-injection-locked (SIL) radar to successfully localize and recover two individual Doppler signals, each caused by either a small periodical movement of a metal plate or a physiological movement of a human body.
{"title":"Single Conversion Stepped-Frequency Continuous-Wave Radar Using Self-Injection-Locking Technology","authors":"Wei-Chih Su, Mu-Cyun Tang, Rezki El Arif, T. Horng, Fu-Kang Wang","doi":"10.1109/mwsym.2019.8700815","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700815","url":null,"abstract":"This paper presents a single conversion stepped-frequency continuous-wave (SCSFCW) radar that uses self-injection-locking technology to achieve high sensitivity, Doppler resolution and range resolution. Moreover, the radar is capable of extracting tiny Doppler shifts from different range bins, so it has great potential to monitor vital signs of multiple people simultaneously. In the experiment, a 7.95-8.95 GHz SCSFCW prototype radar was constructed by an RF up-down converter pumped with a 5.5-6.5 GHz stepped chirp signal and a 2.45 GHz IF self-injection-locked (SIL) radar to successfully localize and recover two individual Doppler signals, each caused by either a small periodical movement of a metal plate or a physiological movement of a human body.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"33 1","pages":"420-423"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84354037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/mwsym.2019.8700870
Liang Lin, Lin Yang, Shuangshuang Zheng, Jiangyan Peng
A two-stage integrated Doherty power amplifier (PA) was designed on latest LDMOS MMIC die and fully integrated with input splitter, output match and combiner as a module with 50ohm in-out characteristics for 2.7GHz LTE small cell application (an industry first). The two stage PA MMIC was fabricated with a size of 3× 2.7 mm2 and was mounted on a Printed Circuit Board (PCB) laminate in 7 × 7 mm2 LGA package. An asymmetric integrated Doherty configuration was adopted with the uneven input power splitting network for better Efficiency. To improve linearity, the third-order intermodulation distortion (IMD3) was simulated and optimized by enhancing VBW (video bandwidth). The output combiner for integrated Doherty is simulated and designed carefully using novel capacitor cancellation method to get good bandwidth and Eff. Using a six-carrier LTE signal with a PAPR of 9 dB and a channel bandwidth of 20 MHz at 2.6 GHz, the full PA (an industry first) exhibited a power gain of 27 dB, 10W peak power, a power-added efficiency (PAE) of 41%, and an ACLR of -31dBc at an average output power of 31 dBm. It was lowered to -51dBc after a digital pre-distortion process.
{"title":"A 10W Fully-Integrated LDMOS MMIC Doherty in LGA Package for 2.7GHz Small Cell Application","authors":"Liang Lin, Lin Yang, Shuangshuang Zheng, Jiangyan Peng","doi":"10.1109/mwsym.2019.8700870","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700870","url":null,"abstract":"A two-stage integrated Doherty power amplifier (PA) was designed on latest LDMOS MMIC die and fully integrated with input splitter, output match and combiner as a module with 50ohm in-out characteristics for 2.7GHz LTE small cell application (an industry first). The two stage PA MMIC was fabricated with a size of 3× 2.7 mm2 and was mounted on a Printed Circuit Board (PCB) laminate in 7 × 7 mm2 LGA package. An asymmetric integrated Doherty configuration was adopted with the uneven input power splitting network for better Efficiency. To improve linearity, the third-order intermodulation distortion (IMD3) was simulated and optimized by enhancing VBW (video bandwidth). The output combiner for integrated Doherty is simulated and designed carefully using novel capacitor cancellation method to get good bandwidth and Eff. Using a six-carrier LTE signal with a PAPR of 9 dB and a channel bandwidth of 20 MHz at 2.6 GHz, the full PA (an industry first) exhibited a power gain of 27 dB, 10W peak power, a power-added efficiency (PAE) of 41%, and an ACLR of -31dBc at an average output power of 31 dBm. It was lowered to -51dBc after a digital pre-distortion process.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"39 1","pages":"1434-1437"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84947482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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