Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700783
K. Haddadi, E. Okada, K. Daffé, F. Mubarak, D. Théron, G. Dambrine
A novel active microwave interferometric technique is implemented on a multiport vector network analyzer for renormalizing the reference impedance 50 Ohms into any desired complex impedance. The resulting measured reflection coefficient around the new reference impedance is around zero, resulting in high measurement sensitivity. The method proposed avoids any external component commonly found in interferometric set-ups. In addition, a zeroing process including vector calibration is developed for broad frequency range and requires only a software procedure to be implemented in the system framework.
{"title":"Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization","authors":"K. Haddadi, E. Okada, K. Daffé, F. Mubarak, D. Théron, G. Dambrine","doi":"10.1109/mwsym.2019.8700783","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700783","url":null,"abstract":"A novel active microwave interferometric technique is implemented on a multiport vector network analyzer for renormalizing the reference impedance 50 Ohms into any desired complex impedance. The resulting measured reflection coefficient around the new reference impedance is around zero, resulting in high measurement sensitivity. The method proposed avoids any external component commonly found in interferometric set-ups. In addition, a zeroing process including vector calibration is developed for broad frequency range and requires only a software procedure to be implemented in the system framework.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1276-1278"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88816895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700792
F. Thome, A. Leuther, F. Heinz, O. Ambacher
In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159 K (1.9 dB) with lowest values of 132 K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15 K compared to the reference technology in combination with superior MMIC yield.
本文介绍了采用两种不同工艺制作的两种w波段LNA mmic的设计、分析和室温性能。该研究表明，给定的50 nm栅长InGaAs mHEMT技术在减少必要漏极电流的情况下，噪声得到了改善。因此，设计、制作并表征了单端平衡w波段LNA MMIC。该放大器具有最先进的噪声温度，单端LNA的平均值为159 K (1.9 dB)，最低值为132 K (1.6 dB)。由于技术研究，与参考技术相比，结合优越的MMIC良率，可以将噪声温度降低约15 K。
{"title":"W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology","authors":"F. Thome, A. Leuther, F. Heinz, O. Ambacher","doi":"10.1109/mwsym.2019.8700792","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700792","url":null,"abstract":"In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159 K (1.9 dB) with lowest values of 132 K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15 K compared to the reference technology in combination with superior MMIC yield.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"157 1","pages":"168-171"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85026384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700809
Alex Pham, S. Saeedi, H. Sigmarsson
An elegant continuously-tunable bandpass filter with a wide tuning range based on liquid metal is presented. The filter is realized using square substrate integrated waveguide cavity resonators, capacitively loaded with liquid metal posts at the center of the resonators. By changing the height of the liquid metal posts, and hence altering the loading capacitances, the resonant frequencies of the resonators are continuously tuned. To prove the concept, a second order bandpass filter is realized and measured. Measurements confirm the wide range tunability of the filter. This demonstrates that liquid-metal, continuous tuning is a promising mechanism for future frequency-agile filter applications.
{"title":"Continuously-Tunable Substrate Integrated Waveguide Bandpass Filter Actuated by Liquid Metal","authors":"Alex Pham, S. Saeedi, H. Sigmarsson","doi":"10.1109/mwsym.2019.8700809","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700809","url":null,"abstract":"An elegant continuously-tunable bandpass filter with a wide tuning range based on liquid metal is presented. The filter is realized using square substrate integrated waveguide cavity resonators, capacitively loaded with liquid metal posts at the center of the resonators. By changing the height of the liquid metal posts, and hence altering the loading capacitances, the resonant frequencies of the resonators are continuously tuned. To prove the concept, a second order bandpass filter is realized and measured. Measurements confirm the wide range tunability of the filter. This demonstrates that liquid-metal, continuous tuning is a promising mechanism for future frequency-agile filter applications.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"21-23"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73801638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/MWSYM.2019.8701114
W. Lai, S. Jang, Guan-zhang Li
This letter designs a wide locking range high modulus ILFD designed in a foundry 0.18 μm CMOS process. The proposed LC ILFD uses two stacked LC ILFDs sharing the same dc current. The top ILFD is used as a ÷2 ILFD and the bottom ILFD is used as a ÷4 ILFD; the latter ILFD is used as the input device and the former ILFD is used as the output device. The ÷4 ILFD uses a multi-resonance resonator as shown experimentally by non-overlapped locking ranges. At the incident power of 0 dBm, the locking range is 4 GHz (38.835 %), from the incident frequency 8.3 GHz to 12.3 GHz. The ILFD core power consumption is 13.98 mW and the die size is 1.2 × 1.2 mm2.
{"title":"High-Modulus Injection-Locked Frequency Divider Using Multi-Resonance Tank","authors":"W. Lai, S. Jang, Guan-zhang Li","doi":"10.1109/MWSYM.2019.8701114","DOIUrl":"https://doi.org/10.1109/MWSYM.2019.8701114","url":null,"abstract":"This letter designs a wide locking range high modulus ILFD designed in a foundry 0.18 μm CMOS process. The proposed LC ILFD uses two stacked LC ILFDs sharing the same dc current. The top ILFD is used as a ÷2 ILFD and the bottom ILFD is used as a ÷4 ILFD; the latter ILFD is used as the input device and the former ILFD is used as the output device. The ÷4 ILFD uses a multi-resonance resonator as shown experimentally by non-overlapped locking ranges. At the incident power of 0 dBm, the locking range is 4 GHz (38.835 %), from the incident frequency 8.3 GHz to 12.3 GHz. The ILFD core power consumption is 13.98 mW and the die size is 1.2 × 1.2 mm2.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"160 1","pages":"251-254"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73938760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700890
A. Mohekar, B. Tilley, V. Yakovlev
Electromagnetic heat exchangers are complex devices involving multiple physical processes and requiring extensive experimental developments. Effectiveness of their operation means efficient conversion of electromagnetic energy into useful mechanical work. In this paper, we present a 2D numerical model of a porous-media-based electromagnetic heat exchanger with three layers. We first report a double S- power response curve when no fluid flow is considered. Comparing the developed curve with the one produced by analytical approach, we find both the curves in satisfactory agreement. After validation, we introduce Darcy’s flow in porous medium, and calculate the power absorbed by the fluid and overall thermal efficiency of the heat exchanger. It is shown that the net power absorbed by the coolant flowing in the porous media is mainly dependent on fluid velocity and outlet temperature. When operating on the middle branch of the double S-curve, total thermal energy collected by the fluid is high, but overall thermal efficiency of the device is low because of the slow movement of the fluid.
{"title":"A 2D Model of a Triple Layer Electromagnetic Heat Exchanger with Porous Media Flow","authors":"A. Mohekar, B. Tilley, V. Yakovlev","doi":"10.1109/mwsym.2019.8700890","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700890","url":null,"abstract":"Electromagnetic heat exchangers are complex devices involving multiple physical processes and requiring extensive experimental developments. Effectiveness of their operation means efficient conversion of electromagnetic energy into useful mechanical work. In this paper, we present a 2D numerical model of a porous-media-based electromagnetic heat exchanger with three layers. We first report a double S- power response curve when no fluid flow is considered. Comparing the developed curve with the one produced by analytical approach, we find both the curves in satisfactory agreement. After validation, we introduce Darcy’s flow in porous medium, and calculate the power absorbed by the fluid and overall thermal efficiency of the heat exchanger. It is shown that the net power absorbed by the coolant flowing in the porous media is mainly dependent on fluid velocity and outlet temperature. When operating on the middle branch of the double S-curve, total thermal energy collected by the fluid is high, but overall thermal efficiency of the device is low because of the slow movement of the fluid.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"49 1","pages":"59-62"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72806004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8701010
A. Wentzel, C. Schuster, R. Jakoby, H. Maune, W. Heinrich
The paper presents the first tunable GaN-based digital transmitter chain for 0.8–1.8 GHz range, suitable for MIMO systems in software-defined radio (SDR) installations. The demonstrator includes a 4-stage digital GaN power amplifier (PA) MMIC and a continuously tunable bandpass output filter based on a barium strontium titanate (BST) thin-film varactor. The filter shows a fractional bandwidth of 7% as well as a minimum insertion loss and maximum input return loss of 0.6 dB and 13 dB, respectively. The module delivers a maximum output power of 3 W and efficiency stays above 40% over the whole tuning range, peaking at 89% for 1.2 GHz. This is to the author`s best knowledge the first reconfigurable digital Tx chain fully demonstrating the inherent advantages of the digital PA approach including broadband operation, compactness, efficiency and reconfigurability.
{"title":"Reconfigurable GaN Digital Tx Applying BST Bandpass Filter","authors":"A. Wentzel, C. Schuster, R. Jakoby, H. Maune, W. Heinrich","doi":"10.1109/mwsym.2019.8701010","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8701010","url":null,"abstract":"The paper presents the first tunable GaN-based digital transmitter chain for 0.8–1.8 GHz range, suitable for MIMO systems in software-defined radio (SDR) installations. The demonstrator includes a 4-stage digital GaN power amplifier (PA) MMIC and a continuously tunable bandpass output filter based on a barium strontium titanate (BST) thin-film varactor. The filter shows a fractional bandwidth of 7% as well as a minimum insertion loss and maximum input return loss of 0.6 dB and 13 dB, respectively. The module delivers a maximum output power of 3 W and efficiency stays above 40% over the whole tuning range, peaking at 89% for 1.2 GHz. This is to the author`s best knowledge the first reconfigurable digital Tx chain fully demonstrating the inherent advantages of the digital PA approach including broadband operation, compactness, efficiency and reconfigurability.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"211 3 1","pages":"1484-1487"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75745469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700863
J. Moody, S. Bowers
This work presents an envelope detector topology based upon triode mode transistors operating as a chain of charge pumps. This detector offers superior tunability, performance, and robustness over the Dickson topology. This work utilizes a direct gate bias applied to complementary devices to form a single detector stage. Application of the RF signal directly onto the transistor source node allows for an independent gate bias. The source only injection reduces the total input capacitance of the detector device thereby reducing total input capacitance. This direct gate bias allows strong control over the device channel impedance (RD) which directly modulates the detector input impedance, output noise level and charge time.
{"title":"Triode-mode Envelope Detectors for Near Zero Power Wake-up Receivers","authors":"J. Moody, S. Bowers","doi":"10.1109/mwsym.2019.8700863","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700863","url":null,"abstract":"This work presents an envelope detector topology based upon triode mode transistors operating as a chain of charge pumps. This detector offers superior tunability, performance, and robustness over the Dickson topology. This work utilizes a direct gate bias applied to complementary devices to form a single detector stage. Application of the RF signal directly onto the transistor source node allows for an independent gate bias. The source only injection reduces the total input capacitance of the detector device thereby reducing total input capacitance. This direct gate bias allows strong control over the device channel impedance (RD) which directly modulates the detector input impedance, output noise level and charge time.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1499-1502"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83163304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700817
F. Hühn, A. Wentzel, W. Heinrich
This paper presents the next development stage of baseband-transparent modulators for digital microwave amplifiers. A modulator, used for encoding the baseband signal into a bitstream suitable for digital outphasing amplification, is presented. Once implemented, it is flexible enough to accommodate a variety of amplifier circuits only by exchanging information stored in a table in memory. This is the first time a complete transmitter chain based on digital outphasing is evaluated with wideband modulated baseband signals. Without an external DPD, measurements of the overall system shows adjacent channel leakage ratios of 57 dB for a 5 MHz wide signal, easily surpassing the 3GPP base-station specification of 45 dB, and reach 44 dB for 20 MHz wide signals at a 900 MHz carrier.
{"title":"A Reconfigurable Modulator for Digital Outphasing Transmitters","authors":"F. Hühn, A. Wentzel, W. Heinrich","doi":"10.1109/mwsym.2019.8700817","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700817","url":null,"abstract":"This paper presents the next development stage of baseband-transparent modulators for digital microwave amplifiers. A modulator, used for encoding the baseband signal into a bitstream suitable for digital outphasing amplification, is presented. Once implemented, it is flexible enough to accommodate a variety of amplifier circuits only by exchanging information stored in a table in memory. This is the first time a complete transmitter chain based on digital outphasing is evaluated with wideband modulated baseband signals. Without an external DPD, measurements of the overall system shows adjacent channel leakage ratios of 57 dB for a 5 MHz wide signal, easily surpassing the 3GPP base-station specification of 45 dB, and reach 44 dB for 20 MHz wide signals at a 900 MHz carrier.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"126 1","pages":"1480-1483"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88135045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700894
Z. Silva, C. Valenta, G. Durgin
Advancements in manufacturing techniques have enabled the ability to create micro-mesh conductive structures which have applications in a variety of electrical engineering technologies. This paper presents the theoretical analysis verified with simulated results and laboratory measurements of a 2.4 GHz micro-mesh transmission line over a solid ground plane. As expected, the reduction in conductive area results in a decrease in capacitance per unit length, and the mesh structure results in an increase in inductance per unit length leading to an overall increase in characteristic impedance and increase in electrical length. Results show that the mesh implementation to reduce the conductive material to 16% on a microstrip transmission line using FR-4 must get 44% wider than its solid metal counterpart to maintain 50 Ω impedance. Length must be similarly increased by a factor of 4% to maintain the same electrical length.
{"title":"Design and Characterization of Meshed Microstrip Transmission Lines","authors":"Z. Silva, C. Valenta, G. Durgin","doi":"10.1109/mwsym.2019.8700894","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700894","url":null,"abstract":"Advancements in manufacturing techniques have enabled the ability to create micro-mesh conductive structures which have applications in a variety of electrical engineering technologies. This paper presents the theoretical analysis verified with simulated results and laboratory measurements of a 2.4 GHz micro-mesh transmission line over a solid ground plane. As expected, the reduction in conductive area results in a decrease in capacitance per unit length, and the mesh structure results in an increase in inductance per unit length leading to an overall increase in characteristic impedance and increase in electrical length. Results show that the mesh implementation to reduce the conductive material to 16% on a microstrip transmission line using FR-4 must get 44% wider than its solid metal counterpart to maintain 50 Ω impedance. Length must be similarly increased by a factor of 4% to maintain the same electrical length.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"6 1","pages":"811-814"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84692234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700752
Cheng Guo, Jin Li, Yang Yu, Fan Zhang, Sheng Li, Moataz M. Attallah, X. Shang, A. Zhang, Yi Wang, M. Lancaster
This paper proposes two methods to improve the spurious-free stopband range for high-quality-factor spherical resonators and a new family of shaped spherical resonators are presented. Geometrical shaping of the proposed resonators is realized by symmetrically squeezing a spherical cavity and further opening a rectangular slot in each squeezed area. The higher order modes of the resonator are first tuned spectrally farther away from the dominant mode by the squeezing, and then are suppressed by the slotting. X-band resonator prototypes are designed, and 3-D printed by using a metallic selective laser melting technique. Quality factors of the fabricated resonators are further improved by vibration grinding process. The experiment validates effective suppression of the first higher order mode and indicates potential applications of the proposed resonators in bandpass filters to extend the spurious-free stopband bandwidths.
{"title":"Shaping and Slotting High-Q Spherical Resonators for Suppression of Higher Order Modes","authors":"Cheng Guo, Jin Li, Yang Yu, Fan Zhang, Sheng Li, Moataz M. Attallah, X. Shang, A. Zhang, Yi Wang, M. Lancaster","doi":"10.1109/mwsym.2019.8700752","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700752","url":null,"abstract":"This paper proposes two methods to improve the spurious-free stopband range for high-quality-factor spherical resonators and a new family of shaped spherical resonators are presented. Geometrical shaping of the proposed resonators is realized by symmetrically squeezing a spherical cavity and further opening a rectangular slot in each squeezed area. The higher order modes of the resonator are first tuned spectrally farther away from the dominant mode by the squeezing, and then are suppressed by the slotting. X-band resonator prototypes are designed, and 3-D printed by using a metallic selective laser melting technique. Quality factors of the fabricated resonators are further improved by vibration grinding process. The experiment validates effective suppression of the first higher order mode and indicates potential applications of the proposed resonators in bandpass filters to extend the spurious-free stopband bandwidths.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"3 1","pages":"1205-1208"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75310286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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