Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700947
D. Vegas, J. Perez-Cisneros, M. Ruiz, Jose A. Garcia
This paper exploits the degree of freedom provided by the continuous class-E modes in order to reduce the impact of a FET on-state resistance when approximating the zero voltage switching (ZVS) operation along a wide range of resistive loads. A UHF class-E/F2 power amplifier (PA), which includes a lumped element drain terminating network to synthesize the optimal load modulation (LM) trajectory, has been designed to maintain an efficiency as high as possible along an output power control range above 10 dB. Based on this PA, an outphasing scheme in the 700 MHz frequency band has been implemented. It is shown to provide an efficiency higher than 60% up to an output power below 5% (-13 dB) of its peak value (47 W). Under mixed-mode operation and applying digital predistorsion (DPD), a 10 MHz LTE signal with a peak-to-average power ratio (PAPR) as high as 12.2 dB has been linearly reproduced with average efficiency and PAE values of 46.6% and 42.9%, respectively.
{"title":"UHF Class E/F2 Outphasing Transmitter for 12 dB PAPR Signals","authors":"D. Vegas, J. Perez-Cisneros, M. Ruiz, Jose A. Garcia","doi":"10.1109/mwsym.2019.8700947","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700947","url":null,"abstract":"This paper exploits the degree of freedom provided by the continuous class-E modes in order to reduce the impact of a FET on-state resistance when approximating the zero voltage switching (ZVS) operation along a wide range of resistive loads. A UHF class-E/F2 power amplifier (PA), which includes a lumped element drain terminating network to synthesize the optimal load modulation (LM) trajectory, has been designed to maintain an efficiency as high as possible along an output power control range above 10 dB. Based on this PA, an outphasing scheme in the 700 MHz frequency band has been implemented. It is shown to provide an efficiency higher than 60% up to an output power below 5% (-13 dB) of its peak value (47 W). Under mixed-mode operation and applying digital predistorsion (DPD), a 10 MHz LTE signal with a peak-to-average power ratio (PAPR) as high as 12.2 dB has been linearly reproduced with average efficiency and PAE values of 46.6% and 42.9%, respectively.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"11 4","pages":"71-74"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72578794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700743
B. Mamandipoor, Upamanyu Madhow, A. Arbabian
In this paper, we develop a systematic framework for two-dimensional mm-wave imaging, based on the singular value decomposition (SVD) of the Helmholtz wave equation under the Born approximation. We identify the degrees of freedom as a function of the geometry of the aperture and the scene, and provide insight into the eigenmodes identified by the SVD. For sparse arrays with number of elements smaller than the degrees of freedom, we propose, and experimentally demonstrate the efficacy of, an eigen-filtered pseudo-inverse algorithm which selects the eigenmodes being imaged.
{"title":"2D mm-wave imaging based on singular value decomposition","authors":"B. Mamandipoor, Upamanyu Madhow, A. Arbabian","doi":"10.1109/mwsym.2019.8700743","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700743","url":null,"abstract":"In this paper, we develop a systematic framework for two-dimensional mm-wave imaging, based on the singular value decomposition (SVD) of the Helmholtz wave equation under the Born approximation. We identify the degrees of freedom as a function of the geometry of the aperture and the scene, and provide insight into the eigenmodes identified by the SVD. For sparse arrays with number of elements smaller than the degrees of freedom, we propose, and experimentally demonstrate the efficacy of, an eigen-filtered pseudo-inverse algorithm which selects the eigenmodes being imaged.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"23 1","pages":"536-539"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80913272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700784
A. Nefzi, Lynn Carr, C. Dalmay, A. Pothier, P. Lévêque, D. Arnaud-Cormos
Exposing living cells to a certain level of Electromagnetic Field (EMF) might induce some biological effects including temperature elevation. In this paper, we show the dosimetry of exposure systems such as an Open Transverse Electro-Magnetic (TEM) cell allowing the study of the effect of EMF on biological samples exposed to 1.8 GHz signals. Temperature measurements are carried out with a fluorooptic probe to extract specific absorption rate (SAR) values that are compared to numerical dosimetry, based on a FDTD method. To investigate dosimetry at a microscopic level the fluorescence of the temperature dependent dye Rhodamine B was measured with fluorescence microscopy. The results are confirmed by measurements and simulations with a SAR of 13.9 and 11.8 W/kg for 1 W incident power, respectively. Results evidence that the objective working distance of the microscope strongly influence SAR values. After calibration, the fluorescence fits well with the temperature variation measured by the probe.
{"title":"Rhodamine B Temperature Dosimetry of Biological Samples Interacting with Electromagnetic Fields in Macrosystems","authors":"A. Nefzi, Lynn Carr, C. Dalmay, A. Pothier, P. Lévêque, D. Arnaud-Cormos","doi":"10.1109/mwsym.2019.8700784","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700784","url":null,"abstract":"Exposing living cells to a certain level of Electromagnetic Field (EMF) might induce some biological effects including temperature elevation. In this paper, we show the dosimetry of exposure systems such as an Open Transverse Electro-Magnetic (TEM) cell allowing the study of the effect of EMF on biological samples exposed to 1.8 GHz signals. Temperature measurements are carried out with a fluorooptic probe to extract specific absorption rate (SAR) values that are compared to numerical dosimetry, based on a FDTD method. To investigate dosimetry at a microscopic level the fluorescence of the temperature dependent dye Rhodamine B was measured with fluorescence microscopy. The results are confirmed by measurements and simulations with a SAR of 13.9 and 11.8 W/kg for 1 W incident power, respectively. Results evidence that the objective working distance of the microscope strongly influence SAR values. After calibration, the fluorescence fits well with the temperature variation measured by the probe.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"21 1","pages":"1454-1457"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77769604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8701047
A. Ferchichi, S. Rehman, C. Carta, F. Ellinger
This paper presents a 60-GHz on-off keying (OOK) demodulator suited for high-speed applications. A highly efficient envelope detector (ED) and a novel limiting amplifier (LA) architecture with high bandwidth and high gain are used to ensure high-speed low-power operation. To avoid degrading the demodulator performances and simultaneously not affect the stability, a feedforward dc-offset cancellation technique is implemented in the LA. Integrated in a 0.13-µm SiGe BiCMOS technology, the demodulator occupies an active footprint of only 0.035 mm2 and consumes 11 mW. The OOK demodulator achieves a data-rate (DR) of 22 Gb/s at a bit-error rate (BER) of less than 10-12, which is – to the authors’ best knowledge – the highest reported DR (for 60-GHz OOK demodulators). This corresponds to an energy efficiency of only 0.5 pJ/bit. At 22 Gb/s, the input sensitivity is -17.4 dBm.
{"title":"22-Gb/s 60-GHz OOK Demodulator in 0.13-µm SiGe BiCMOS for Ultra-High-Speed Wireless Communication","authors":"A. Ferchichi, S. Rehman, C. Carta, F. Ellinger","doi":"10.1109/mwsym.2019.8701047","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8701047","url":null,"abstract":"This paper presents a 60-GHz on-off keying (OOK) demodulator suited for high-speed applications. A highly efficient envelope detector (ED) and a novel limiting amplifier (LA) architecture with high bandwidth and high gain are used to ensure high-speed low-power operation. To avoid degrading the demodulator performances and simultaneously not affect the stability, a feedforward dc-offset cancellation technique is implemented in the LA. Integrated in a 0.13-µm SiGe BiCMOS technology, the demodulator occupies an active footprint of only 0.035 mm2 and consumes 11 mW. The OOK demodulator achieves a data-rate (DR) of 22 Gb/s at a bit-error rate (BER) of less than 10-12, which is – to the authors’ best knowledge – the highest reported DR (for 60-GHz OOK demodulators). This corresponds to an energy efficiency of only 0.5 pJ/bit. At 22 Gb/s, the input sensitivity is -17.4 dBm.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"28 1","pages":"247-250"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80841488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8701002
Frida Strombeck, Z. He, H. Zirath
An Amplitude Modulated Continuous Wave (AMCW) radar system is proposed that uses both the phase from the envelope and carrier to achieve micrometer accuracy distance measurement. The system has the benefit of using only two frequencies instead of an entire frequency band which is the case with FMCW radars. Many radar systems can therefore be used in a small area without risking interference. An experimental radar setup at 78 GHz is measured and verified to have a measurement error magnitude of less than 10 micrometer. This system is suitable for modern manufacturing and industry.
{"title":"AMCW Radar of Micrometer Accuracy Distance Measurement and Monitoring","authors":"Frida Strombeck, Z. He, H. Zirath","doi":"10.1109/mwsym.2019.8701002","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8701002","url":null,"abstract":"An Amplitude Modulated Continuous Wave (AMCW) radar system is proposed that uses both the phase from the envelope and carrier to achieve micrometer accuracy distance measurement. The system has the benefit of using only two frequencies instead of an entire frequency band which is the case with FMCW radars. Many radar systems can therefore be used in a small area without risking interference. An experimental radar setup at 78 GHz is measured and verified to have a measurement error magnitude of less than 10 micrometer. This system is suitable for modern manufacturing and industry.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"1473-1475"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76021673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700736
William Sear, T. Barton
This work presents a power amplifier (PA) linearization approach based on baseband feedback. The modulated signal envelope is fed back from the transistor’s drain to its gate with an applied amplitude and phase shift selected to reduce the intermodulation distortion (IMD3) product at the output. The design targets IMD3 improvement near the PA’s 1-dB compression point (P1dB), enabling linear operation at a higher output power level and therefore improved device periphery utilization and efficiency. This approach offers a potential linearization alternative to digital pre-distortion, which cannot be applied in some systems, without affecting the RF performance. The 850-MHz proof-of-concept prototype based on a 15-W GaN device is characterized with a two-tone measurement with 5-MHz spacing, and demonstrates 9-dB improvement of the lower IMD3 tone near the P1dB point.
{"title":"A Baseband Feedback Approach to Linearization of a UHF Power Amplifier","authors":"William Sear, T. Barton","doi":"10.1109/mwsym.2019.8700736","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700736","url":null,"abstract":"This work presents a power amplifier (PA) linearization approach based on baseband feedback. The modulated signal envelope is fed back from the transistor’s drain to its gate with an applied amplitude and phase shift selected to reduce the intermodulation distortion (IMD3) product at the output. The design targets IMD3 improvement near the PA’s 1-dB compression point (P1dB), enabling linear operation at a higher output power level and therefore improved device periphery utilization and efficiency. This approach offers a potential linearization alternative to digital pre-distortion, which cannot be applied in some systems, without affecting the RF performance. The 850-MHz proof-of-concept prototype based on a 15-W GaN device is characterized with a two-tone measurement with 5-MHz spacing, and demonstrates 9-dB improvement of the lower IMD3 tone near the P1dB point.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"2677 1","pages":"75-78"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87417019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700856
Changkun Liu, Zhixian Deng, Xiaohui Liu, Xun Luo
In this paper, a wideband bandpass filter with the broad stopband and ultra-wide reflectionless range is proposed. Such filter consists of two parallel connected channels. The good in-band performance and broad stopband of the filter are achieved using the dumbbell-shaped defected ground structure (DGS) in the main channel. Meanwhile, the auxiliary channel with a bandstop filter (BSF) and a loaded resistor is introduced to obtain the ultra-wide reflectionless range. Besides, to further enhance the stopband performance of the filter, spur-lines are embedded in the I/O port of main channel. To verify the mechanisms mentioned above, a reflectionless filter operating at 3.1–5.3 GHz is proposed. The measured stopband is expanded to 27.4 GHz with an attenuation level higher than 30 dB. Moreover, the reflectionless range is from 10 MHz to 26 GHz, which is the state-of-the-art performance. With such good performance, the proposed filter shows strong merits for the 5G applications.
{"title":"A Wideband Bandpass Filter with Broad Stopband and Ultra-Wide Reflectionless Range for 5G Applications","authors":"Changkun Liu, Zhixian Deng, Xiaohui Liu, Xun Luo","doi":"10.1109/mwsym.2019.8700856","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700856","url":null,"abstract":"In this paper, a wideband bandpass filter with the broad stopband and ultra-wide reflectionless range is proposed. Such filter consists of two parallel connected channels. The good in-band performance and broad stopband of the filter are achieved using the dumbbell-shaped defected ground structure (DGS) in the main channel. Meanwhile, the auxiliary channel with a bandstop filter (BSF) and a loaded resistor is introduced to obtain the ultra-wide reflectionless range. Besides, to further enhance the stopband performance of the filter, spur-lines are embedded in the I/O port of main channel. To verify the mechanisms mentioned above, a reflectionless filter operating at 3.1–5.3 GHz is proposed. The measured stopband is expanded to 27.4 GHz with an attenuation level higher than 30 dB. Moreover, the reflectionless range is from 10 MHz to 26 GHz, which is the state-of-the-art performance. With such good performance, the proposed filter shows strong merits for the 5G applications.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"38 1","pages":"834-837"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86263236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700879
Tae‐Hak Lee, J. Laurin, K. Wu
In this paper, we devise and develop a simple and low-cost method to tune the resonant frequency of a substrate integrated waveguide (SIW) resonator. A capacitance-loaded coaxial resonator is designed and then a circularly shaped high-permeability foil is attached so to control the air-gap thickness generated inside the resonator. A small and commercially available magnet is subsequently used to induce a magnetic flux to the foil and it results in a continuous resonant frequency tuning from 1.39 GHz to 3.73 GHz. Detailed fabrication and measurement process are given in this paper.
{"title":"A Wideband Frequency-Tuning Method Using Magnetically Actuated Mechanical Tuning of a SIW Resonator","authors":"Tae‐Hak Lee, J. Laurin, K. Wu","doi":"10.1109/mwsym.2019.8700879","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700879","url":null,"abstract":"In this paper, we devise and develop a simple and low-cost method to tune the resonant frequency of a substrate integrated waveguide (SIW) resonator. A capacitance-loaded coaxial resonator is designed and then a circularly shaped high-permeability foil is attached so to control the air-gap thickness generated inside the resonator. A small and commercially available magnet is subsequently used to induce a magnetic flux to the foil and it results in a continuous resonant frequency tuning from 1.39 GHz to 3.73 GHz. Detailed fabrication and measurement process are given in this paper.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"218 1","pages":"192-195"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90749882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700783
K. Haddadi, E. Okada, K. Daffé, F. Mubarak, D. Théron, G. Dambrine
A novel active microwave interferometric technique is implemented on a multiport vector network analyzer for renormalizing the reference impedance 50 Ohms into any desired complex impedance. The resulting measured reflection coefficient around the new reference impedance is around zero, resulting in high measurement sensitivity. The method proposed avoids any external component commonly found in interferometric set-ups. In addition, a zeroing process including vector calibration is developed for broad frequency range and requires only a software procedure to be implemented in the system framework.
{"title":"Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization","authors":"K. Haddadi, E. Okada, K. Daffé, F. Mubarak, D. Théron, G. Dambrine","doi":"10.1109/mwsym.2019.8700783","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700783","url":null,"abstract":"A novel active microwave interferometric technique is implemented on a multiport vector network analyzer for renormalizing the reference impedance 50 Ohms into any desired complex impedance. The resulting measured reflection coefficient around the new reference impedance is around zero, resulting in high measurement sensitivity. The method proposed avoids any external component commonly found in interferometric set-ups. In addition, a zeroing process including vector calibration is developed for broad frequency range and requires only a software procedure to be implemented in the system framework.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1276-1278"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88816895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700792
F. Thome, A. Leuther, F. Heinz, O. Ambacher
In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159 K (1.9 dB) with lowest values of 132 K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15 K compared to the reference technology in combination with superior MMIC yield.
本文介绍了采用两种不同工艺制作的两种w波段LNA mmic的设计、分析和室温性能。该研究表明，给定的50 nm栅长InGaAs mHEMT技术在减少必要漏极电流的情况下，噪声得到了改善。因此，设计、制作并表征了单端平衡w波段LNA MMIC。该放大器具有最先进的噪声温度，单端LNA的平均值为159 K (1.9 dB)，最低值为132 K (1.6 dB)。由于技术研究，与参考技术相比，结合优越的MMIC良率，可以将噪声温度降低约15 K。
{"title":"W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology","authors":"F. Thome, A. Leuther, F. Heinz, O. Ambacher","doi":"10.1109/mwsym.2019.8700792","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700792","url":null,"abstract":"In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159 K (1.9 dB) with lowest values of 132 K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15 K compared to the reference technology in combination with superior MMIC yield.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"157 1","pages":"168-171"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85026384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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